CN102881754B - Back point contact cell with bubbling-free aluminum oxide and preparation method thereof - Google Patents
Back point contact cell with bubbling-free aluminum oxide and preparation method thereof Download PDFInfo
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- CN102881754B CN102881754B CN201210369077.7A CN201210369077A CN102881754B CN 102881754 B CN102881754 B CN 102881754B CN 201210369077 A CN201210369077 A CN 201210369077A CN 102881754 B CN102881754 B CN 102881754B
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- aluminum oxide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a back point contact cell with bubbling-free aluminum oxide. The back point contact cell comprises an aluminum oxide layer and a protective film. A buffer layer is arranged between the aluminum oxide layer and the protective film. By the aid of arrangement of the buffer layer, stress of aluminum oxide during sintering is relieved, the bubbling problem of the aluminum oxide is solved, attenuation of solar cell performance is limited. The invention further discloses a preparation method of the cell, the bubbling problem of the aluminum oxide can be solved by only growing a silicon oxide buffer film on the surface of an aluminum oxide passivating film, and the preparation method is high in operability.
Description
Technical field
The present invention relates to a kind of solar cell and preparation method thereof, be specifically related to the back point contact battery and preparation method thereof of a kind of aluminium oxide not bubbling.
Background technology
Modernization solar cell suitability for industrialized production is towards high efficiency, low cost future development, and back point contact (PERC) battery, as the representative of high efficiency, low cost developing direction, it is advantageous that:
(1) excellent back reflector: the existence due to cell backside deielectric-coating makes interior back reflection be increased to 92-95% from the full aluminium back surface field 65% of routine.The absorption of the longwave optical increased on the one hand, especially provides technical guarantee to the trend of following Thin film cell on the other hand;
(2) superior passivating back technology: due to the good passivation of back side deielectric-coating, can by back side recombination rate from full aluminium carry on the back ~ 1000cm/s is reduced to 100-200cm/s;
At present because back point contact battery majority adopts p-type substrate, back side deielectric-coating passivation is based on aluminium oxide.Again because aluminium paste has attack function to aluminium oxide, aluminum oxide film surface needs to cover one deck protective film and is used for stopping that aluminium paste is to the erosion of film.And the contact need of film perforate part aluminium paste and silicon sinters and is formed; in sintering process, in aluminium oxide, the release of hydrogen and the stress of film self are not enough to timely release under the compacting of diaphragm and aluminium paste; aluminium oxide can be caused to occur bubbling, thus cause the decay of battery performance.
Summary of the invention
Goal of the invention: be the deficiency existed for prior art, provides the back point contact battery and preparation method thereof of a kind of aluminium oxide not bubbling.
Technical scheme: for achieving the above object, the invention provides the back point contact battery of a kind of aluminium oxide not bubbling, comprising: alumina layer and diaphragm; One deck resilient coating is provided with between described alumina layer and diaphragm.The present invention alleviates stress in sintering process in aluminium oxide by arranging one deck resilient coating, eliminates the bubbling problem of aluminium oxide, limits the decay of solar cell properties.
Described in the present invention, resilient coating is preferably silica, that is: silicon oxide film.Diaphragm described in the present invention is SiNx, or SiCx or TiOx.
The invention also discloses the preparation method of a kind of aluminium oxide not back point contact battery of bubbling, concrete steps are as follows:
(1) P-type silicon sheet goes damage and making herbs into wool, cleaning;
(2) tubular type phosphorus diffusion, diffused sheet resistance 60ohm/sq;
(3) wet method in line equipment removes the diffusion layer of silicon chip back side and periphery, and cleaning silicon chip;
(4) in the back surface growth aluminum oxide passivation film of silicon chip, thickness 9nm-11 nm;
(5) at aluminum oxide passivation film superficial growth silica buffer film;
(6) at silica buffer film superficial growth silicon nitride diaphragm;
(7) at the front surface grown silicon nitride antireflective film of silicon chip;
(8) back side membrane laser perforate;
(9) at back surface printing back electrode and the aluminium paste of silicon chip;
(10) at the front surface printing grid line of silicon chip;
(11) sinter, test.
In described step (5), the growing method of silica buffer film is: PECVD, or chemical solution oxidation, or ald, or APCVD.
Beneficial effect: the present invention compared with prior art has the following advantages:
Solar cell of the present invention can eliminate the bubbling phenomenon of back side deielectric-coating, thus limits the decay of battery performance, improves the useful life of solar cell.
Method of the present invention only at the superficial growth silica buffer film of aluminum oxide passivation film, need can eliminate the bubbling problem of aluminium oxide, workable.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the not back point contact battery of bubbling of aluminium oxide described in the embodiment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, illustrate the present invention further, the present embodiment is implemented under premised on technical solution of the present invention, should understand these embodiments and only be not used in for illustration of the present invention and limit the scope of the invention.
Embodiment
The back point contact battery of the not bubbling of a kind of aluminium oxide as shown in Figure 1, is provided with: front surface A g electrode 1, SiNx antireflective passive film 2, phosphorus-diffused layer 3, P-type silicon matrix 4, aluminum oxide film 5, resilient coating 6, diaphragm 7, back side Al electrode 8 from top to down successively; Described resilient coating 6 is silicon oxide film; Described diaphragm 7 is silicon nitride film.
The preparation method of the above-mentioned aluminium oxide not back point contact battery of bubbling, concrete steps are as follows:
(1) P-type silicon matrix goes damage and making herbs into wool, cleaning, p-type silicon chip, resistivity 0.5-6 ohmcm;
(2) tubular type phosphorus diffusion, diffused sheet resistance 60ohm/sq, forms phosphorus-diffused layer;
(3) wet method in line equipment removes the diffusion layer of silicon chip back side and periphery, and cleaning silicon chip;
(4) in the back surface growth aluminum oxide passivation film of silicon chip, thickness 10nm;
(5) at the method growing silicon oxide deielectric-coating of aluminum oxide film surface PECVD;
(6) at the method grown silicon nitride diaphragm of silicon oxide film surface PECVD;
(7) at the method growth SiNx antireflective passive film of the front surface PECVD of silicon chip;
(8) back side membrane laser perforate;
(9) at the front surface printing grid line of silicon chip;
(10) sinter, test.
After completing cell piece making, adopt 30% salt acid soak cell piece, draw the aluminium of cell backside, expose film, under light microscope or SEM, watch film surface, film surface there will not be bubbling.
Claims (2)
1. a preparation method for the aluminium oxide not back point contact battery of bubbling, is characterized in that: concrete steps are as follows:
(1) P-type silicon sheet goes damage and making herbs into wool, cleaning;
(2) tubular type phosphorus diffusion, diffused sheet resistance 60ohm/sq;
(3) wet method in line equipment removes the diffusion layer of silicon chip back side and periphery, and cleaning silicon chip;
(4) in the back surface growth aluminum oxide passivation film of silicon chip, thickness 9nm-11 nm;
(5) at aluminum oxide passivation film superficial growth silica buffer film;
(6) at silica buffer film superficial growth silicon nitride diaphragm;
(7) at the front surface grown silicon nitride antireflective film of silicon chip;
(8) back side membrane laser perforate;
(9) at back surface printing back electrode and the aluminium paste of silicon chip;
(10) at the front surface printing grid line of silicon chip;
(11) sinter, test.
2. the preparation method of a kind of aluminium oxide according to claim 1 not back point contact battery of bubbling, it is characterized in that: in described step (5), the growing method of silica buffer film is: PECVD, or chemical solution oxidation, or ald, or APCVD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210369077.7A CN102881754B (en) | 2012-09-27 | 2012-09-27 | Back point contact cell with bubbling-free aluminum oxide and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210369077.7A CN102881754B (en) | 2012-09-27 | 2012-09-27 | Back point contact cell with bubbling-free aluminum oxide and preparation method thereof |
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| Publication Number | Publication Date |
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| CN102881754A CN102881754A (en) | 2013-01-16 |
| CN102881754B true CN102881754B (en) | 2015-04-22 |
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| CN201210369077.7A Expired - Fee Related CN102881754B (en) | 2012-09-27 | 2012-09-27 | Back point contact cell with bubbling-free aluminum oxide and preparation method thereof |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400868A (en) * | 2013-07-08 | 2013-11-20 | 浙江晶科能源有限公司 | Novel double-layer-film back-passivated solar cell structure |
| CN105810779B (en) * | 2016-04-08 | 2017-11-03 | 苏州阿特斯阳光电力科技有限公司 | A kind of preparation method of PERC solar cells |
| CN106981522B (en) * | 2017-03-03 | 2018-07-10 | 浙江爱旭太阳能科技有限公司 | PERC solar cells of photoelectric conversion efficiency and preparation method thereof can be improved |
| CN112736144A (en) * | 2019-10-15 | 2021-04-30 | 浙江爱旭太阳能科技有限公司 | Solar cell and method for producing a layer structure for a solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290473A (en) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | Back point contact crystalline silicon solar cell and preparation method thereof |
| CN102487103A (en) * | 2010-12-03 | 2012-06-06 | 上海凯世通半导体有限公司 | Solar cell and preparation method thereof |
| EP2484803A1 (en) * | 2011-02-07 | 2012-08-08 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of deposition of Al2O3/SiO2 stacks, from aluminium and silicon precursors |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102487103A (en) * | 2010-12-03 | 2012-06-06 | 上海凯世通半导体有限公司 | Solar cell and preparation method thereof |
| EP2484803A1 (en) * | 2011-02-07 | 2012-08-08 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of deposition of Al2O3/SiO2 stacks, from aluminium and silicon precursors |
| CN102290473A (en) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | Back point contact crystalline silicon solar cell and preparation method thereof |
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