CN104465799B - A kind of crystal silicon solar energy battery and preparation method thereof - Google Patents
A kind of crystal silicon solar energy battery and preparation method thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 174
- 239000010703 silicon Substances 0.000 title claims abstract description 174
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 173
- 239000013078 crystal Substances 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 238000002161 passivation Methods 0.000 claims abstract description 78
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 38
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- 239000004411 aluminium Substances 0.000 claims abstract description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 21
- 239000001257 hydrogen Substances 0.000 claims abstract description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 15
- 229910052718 tin Inorganic materials 0.000 claims abstract description 15
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 63
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 62
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- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
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- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
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- 229910021641 deionized water Inorganic materials 0.000 description 1
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- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004153 renaturation Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
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- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Life Sciences & Earth Sciences (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention provides a kind of crystal silicon solar energy battery and preparation method thereof, the crystal silicon solar energy battery includes front electrode, antireflective coating, silicon base, passivation layer and the backplate for stacking gradually；The passivation layer is formed by vacuum coating, and the target of the vacuum coating is metal-doped silicon oxide target, and doping metals are aluminium and/or tin, contain hydrogen or ammonia in the atmosphere of vacuum coating.The crystal silicon solar energy battery that the present invention is provided, its minority carrier life time are greatly prolonged, and the short circuit current and open-circuit voltage of battery effectively improve, so that the photoelectric transformation efficiency of crystal silicon solar energy battery is greatly improved.
Description
Technical field
The invention belongs to technical field of solar, more particularly to a kind of crystal silicon solar energy battery and preparation method thereof.
Background technology
High efficiency, low cost is two main trend of current solar cell development.By the thinning of silicon chip, constantly can drop
Low silicon solar cell manufacturing cost.And when diffusion length of the silicon wafer thickness less than minority carrier, battery surface it is compound
Impact of the speed to efficiency just seems more important.Meanwhile, exist as crystal periodic arrangement is interrupted in silicon chip surface and produce
Raw dangling bonds so that surface state and interface are produced in crystal energy gap.These all will produce space electricity in surface and interface
Lotus, forms surface and interface potential barrier, causes surface and interface band curvature nearby, so as to affect carrier transport.Therefore, improve
The quality of surface passivation, reduction recombination-rate surface have become one of Main Means of raising battery efficiency.
In efficient laboratory silicon solar cell, thermal oxide is commonly used（1050℃）SiO2P-type silicon surface is carried out
Passivation.But high temperature oxidation process not can apply to large-scale industrial production so far, one of major reason is silicon material
The body life time of material（As in the life-span of minority carrier, be mean time of the nonequilibrium carrier from generation to compound presence in crystal
Between be spaced）.For the hypersensitivity of pyroprocess, especially when temperature is more than 900 DEG C, the life-span of carrier in polysilicon chip
Significantly reduce.Plasma enhanced chemical vapor deposition（PECVD）Silicon nitride（SiNx）Passivating back material is substituted as a kind of,
It is applied in the industrial production, is commonly used for the reduced passivation resisting layer on p type solar cell n+ surfaces.But work as and be applied to height
When mixing p+ surfaces, SiNx does not show effective passivation properties.Meanwhile, this silicon nitride back of the body passivation layer can also be in silicon chip back side
Inversion layer is formed, after overleaf metallizing, easily causes electric leakage.PECVD device needs import, expensive, cost mostly simultaneously
It is huge.
Another kind of method is that the silicon dioxide/silicon nitride passivation for preparing laminated construction is combined using thermal oxidation method and PECVD
Layer.But as the interface between lamination and stack surface produce potential barrier, cause band curvature and resistance increase, block on the contrary
Carrier transport, reduces the electric current and voltage of battery, so as to affect the conversion efficiency of battery.
Somebody prepares Al using atom deposition method in recent years2O3Passivation layer, can obtain certain passivation effect, but should
The deposition velocity of method is limited in about 2nm/min, and deposition velocity is slow, apparatus expensive causes the method to also fail to be industrialized
Using.
The content of the invention
The present invention solves the back of the body passivation layer structure adopted in crystal silicon solar energy battery in prior art causes battery to be deposited
Photoelectric transformation efficiency it is low, and the technical problem of industrialized production cannot be obtained.
The invention provides a kind of crystal silicon solar energy battery, the crystal silicon solar energy battery includes just stacking gradually
Face electrode, antireflective coating, silicon base, passivation layer and backplate；The passivation layer is formed by vacuum coating, the Vacuum Deposition
The target of film is metal-doped silicon oxide target, and doping metals are aluminium and/or tin, contains hydrogen or ammonia in the atmosphere of vacuum coating
Gas.
Present invention also offers the preparation method of the crystal silicon solar energy battery, comprises the following steps：
S10, silicon substrate surface is carried out making herbs into wool, diffusion and wet etching, then plate one on a surface of silicon base
Layer antireflective coating, and another surface is processed by shot blasting；
S20, will be positioned in vacuum coating room through the silicon base of step S10, pass through on the surface of polishing at which
Last layer passivation layer is plated in vacuum coating；The target of the vacuum coating be metal-doped silicon oxide target, doping metals be aluminium and/or
Tin, contains hydrogen or ammonia in the atmosphere of vacuum coating；
S30, passivation layer surface formed back electrode layer, and antireflective coating surface formed front electrode layer, obtain
To the crystal silicon solar energy battery.
The crystal silicon solar energy battery that the present invention is provided, by arranging layer compound passivation, the passivation at the back side of silicon base
Layer is formed by vacuum coating, and plated film target is metal-doped silicon oxide target so that contain various effective passivation in passivation layer
Material（Such as silica, silicon nitride, aluminum oxide and/or tin oxide, aluminium and/or tin simple substance, the silica of doping hydrogen or silicon nitride
Deng）, the defects such as dangling bonds in silicon chip, dislocation, crystal boundary on the one hand can be passivated, few son is reduced（That is minority carrier）Answer
Close；On the other hand carrier mobility can be improved, extends the life-span of few son, improve the short circuit current and open-circuit voltage of battery, from
And it is greatly improved the photoelectric transformation efficiency of crystal silicon solar energy battery.The preparation of the crystal silicon solar energy battery that the present invention is provided
Method, whole technical process are simple, and equipment and technology is ripe, and cost input is compared existing process and greatly reduced, and easy to operate, weight
Renaturation is good, practical, is capable of achieving large-scale production.
Description of the drawings
Fig. 1 is the structural representation of the crystal silicon solar energy battery during prior art is provided with single-layer silicon nitride silicon passivation layer
Figure.
Fig. 2 is the structural representation of the crystal silicon solar energy battery during prior art is provided with multilayer laminated passivation layer.
Fig. 3 is the structural representation of the crystal silicon solar energy battery that the present invention is provided.
In figure, 1 --- front electrode, 2 --- antireflective coating, 3 --- silicon base, 4 --- layer compound passivation, 5 --- the back of the body
Face electrode；6 --- single-layer silicon nitride silicon passivation layer, 7 --- silicon dioxide layer, 8 --- alundum (Al2O3) layer, 9 --- silicon nitride layer.
Specific embodiment
The structure of the crystal silicon solar energy battery with individual layer passivation layer structure of the prior art is as shown in figure 1, general
It is that one layer of single-layer silicon nitride silicon passivation layer 6 is arranged by the shady face in silicon base 3, then re-forms backplate 5, its passivation effect
It is really very limited.And there is the structure of the crystal silicon solar energy battery of multilayer laminated passivation layer then as shown in Fig. 2 which passes through in silicon
The shady face of substrate 3 arranges the passivation layer with multi-layer laminate structure, and specifically, the passivation layer may include the dioxy for stacking gradually
SiClx layer 7, alundum (Al2O3) layer 8, silicon nitride layer 9, but it is not limited to this.In such passivation layer with laminated construction, due to
There is between each layer handing-over interface, and the number of plies is more, handing-over interface is more, it is more in the chance that complex centre is formed at interface,
Minority carrier life time is shorter, meanwhile, interfacial state can increase cell resistance, not become good Ohmic contact, can reduce having for battery
Effect output current, so as to largely effect on the photoelectric transformation efficiency of battery.
Therefore, a kind of crystal silicon solar energy battery is provided in the present invention, and structure is as shown in figure 3, including stacking gradually
Front electrode 1, antireflective coating 2, silicon base 3, passivation layer and backplate 5, although wherein passivation layer is single layer structure, which is
Layer compound passivation 4 containing various effective deactivation matters, specifically may include silica, silicon nitride, aluminum oxide and/or tin oxide,
Aluminium and/or tin simple substance, the silica of doping hydrogen or silicon nitride etc..In the present invention, the passivation layer（As layer compound passivation 4）Pass through
Vacuum coating is formed, and the target of the vacuum coating is metal-doped silicon oxide target, and doping metals are aluminium and/or tin, Vacuum Deposition
Contain hydrogen or ammonia in the atmosphere of film.
The crystal silicon solar energy battery that the present invention is provided, by arranging layer compound passivation 4, one side at the back side of silicon base
Face can be passivated the defects such as the dangling bonds in silicon chip, dislocation, crystal boundary, reduce few son（That is minority carrier）It is compound；The opposing party
Carrier mobility can be improved in face, extend the life-span of few son, improve the short circuit current and open-circuit voltage of battery, so as to carry significantly
The photoelectric transformation efficiency of high crystal silicon solar energy battery.
In the present invention, although the passivation layer is single layer structure, in its single layer structure, contain various passivations, which can have
Effect improves the passivation efficiency of passivation layer, therefore the thickness to layer compound passivation in the present invention 4 does not have particular/special requirement, in prior art
In the range of the general thickness of the individual layer passivation layer of middle solar cell.Under preferable case, the thickness of the passivation layer is 30 ~
200nm, more preferably 100 ~ 200nm.
In the present invention, the front electrode 1, backplate 5 act primarily as collected current, conductive effect, its general employing
The little metallics of good conductivity, resistance, for example may be selected from Au, Ag, Ni, Cu, Mo, etc., the present invention in preferably adopt Al, Sn,
But it is not limited to this.Wherein, in the normal ranges of this area, the present invention does not have the thickness of front electrode 1, backplate 5
Particular/special requirement.Under preferable case, the thickness of the backplate 5 is 100 ~ 200nm, more preferably 120 ~ 180nm.Similarly,
Under preferable case, the thickness of the front electrode 1 is 100 ~ 200nm, more preferably 120 ~ 180nm.
In the present invention, the antireflective coating is preferably silicon nitride, but is not limited to this.Under preferable case, antireflective coating
Thickness is 50 ~ 500nm, more preferably 100 ~ 300nm.The thickness of the silicon base be 150 ~ 325 microns, preferably 220 ~ 240
Micron.
Present invention also offers the preparation method of the crystal silicon solar energy battery, comprises the following steps：
S10, silicon substrate surface is carried out making herbs into wool, diffusion and wet etching, then plate one on a surface of silicon base
Layer antireflective coating, and another surface is processed by shot blasting；
S20, will be positioned in vacuum coating room through the silicon base of step S10, pass through on the surface of polishing at which
Last layer passivation layer is plated in vacuum coating；The target of the vacuum coating be metal-doped silicon oxide target, doping metals be aluminium and/or
Tin, contains hydrogen or ammonia in the atmosphere of vacuum coating；
S30, passivation layer surface formed back electrode layer, and antireflective coating surface formed front electrode layer, obtain
To the crystal silicon solar energy battery.
The preparation method of the crystal silicon solar energy battery that the present invention is provided, whole technical process are simple, and equipment and technology is ripe,
Cost input is compared existing process and is greatly reduced, and easy to operate, reproducible, practical, is capable of achieving large-scale production.
As the common knowledge of those skilled in the art, making herbs into wool, diffusion and wet etching are carried out to silicon base and is silicon chip
Pretreatment process.Specifically, making herbs into wool is to remove the defect formed when silicon chip cuts, forming inverted pyramid in silicon chip surface
Structure, strengthens the reflection of light.In the present invention, the making herbs into wool can adopt acid making herbs into wool, it would however also be possible to employ alkali formula making herbs into wool, it is preferred to use
Acid making herbs into wool.It is highly preferred that making herbs into wool step is：Using HNO3/HF/H2O systems（That is nitric/hydrofluoric/water mixed system）, its
Middle nitric acid is pure for analysis, and mass concentration is 69%；Hydrofluoric acid is pure for analysis, and mass concentration is 49%；Water is deionized water, resistance value
For 18 mega-ohm centimeters；Three's volume ratio is 6.5：1：3；Temperature is 8～11 DEG C；Using the HNO3/HF/H2O system cleaning silicon chip tables
Face, and form matte.As it was previously stated, the thickness of the silicon base be 150 ~ 325 microns, making herbs into wool formed pyramid highly be 2 ~
10 microns.When the thickness of the silicon base is preferably 220 ~ 240 microns, accordingly, the pyramid that making herbs into wool is formed highly is 3 ~ 10
Micron.
Diffusion is, in order to phosphorus doping is made in silicon, to form emitter stage.Specifically, diffusing step is：Using POCl3（Three
Chlorethoxyfos）As phosphorus source, the silicon chip after making herbs into wool is doped in high temperature dispersing furnace, forms emitter stage, emitter resistance is
65 ~ 100 Europe.Then the silicon chip to passing through diffusion carries out wet etching, removes the phosphorosilicate glass and back side PN junction for diffuseing to form, obtains
To the silicon base 3.
After the completion of wet etching, you can form antireflective coating 2 on a surface of silicon base 3, the surface is silicon base 3
Phototropic face（Also known as front）.Antireflective coating 2 is arranged by the phototropic face in silicon base 3, can be effectively increased and be irradiated to silicon chip table
The absorptivity of the solar photon in face.In the present invention, the material of the antireflective coating 2 can be aluminum oxide, silica, titanium dioxide
The various antireflective coatings such as titanium, magnesium fluoride or silicon nitride commonly use material, preferred silicon nitride in the present invention.In the case of more preferably, this
In bright, the antireflective coating 2 preferably passes through PECVD（Plasma reinforced chemical vapour deposition）Formed.In the present invention, can also be straight
The silicon chip that commercially available surface has been attached with silicon nitride anti-reflecting film is connect, the preparation method for then providing according to the present invention is subsequently located
Reason.
According to the preparation method that the present invention is provided, another surface to silicon base（That is shady face, also known as the back side）Carry out
The technique that polishing, wherein polished backside are processed is known to those skilled in the art, and here is omitted.Then can be right
Silicon face after polishing is passivated a layer coating film treatment.
In the present invention, as the common knowledge of those skilled in the art, before vacuum coating is carried out to silicon substrate bottom back side,
Also need which is carried out preheating successively, clean and pre-sputtering, can just be passivated a layer plated film.And it is in vacuum to clean with pre-sputtering
Carry out under state.Therefore, after the completion of preheating to silicon base, you can send into coating chamber, and to vacuumizing in plated film room（First extract out
Air in plated film room, is then charged with required atmosphere during plated film）, cleaned by vacuum is reached after subsequent technique requirement
Operate with pre-sputtering, be finally passivated a layer coating film treatment.
Specifically, the pre-heat treatment can be：There is antireflective coating, the back side to fill through the silicon base of polishing front
Enter substrate carrier loader, and send into preheating chamber, heated using infrared lamp box or stainless steel heating tube, heating-up temperature is in normal temperature
Adjustable in ~ 1000 DEG C, preferably 200 ~ 400 DEG C of the present invention, preheating time can be 20min, but be not limited to this.After preheating is finished,
Silicon base feeding coating chamber is vacuumized, the method for vacuumizing can be common in the art various vacuumizes
Method, for example, directly can be taken out using mechanical series connection of pumps, it is also possible to mechanical pump lobe pump tandem molecule pumping, or mechanical series connection of pumps
Lobe pump bridging molecules pumping, the present invention preferably multistage series connection of pumps are taken out.Reacting gas is then charged with to first vacuumizing in plated film room
To vacuum（Also known as technique vacuum）For 3 × 10-2Pa~5×10-5Pa, preferably 3 × 10-3~6×10-4Pa, that is, reach technique
Require.After reaching technique vacuum level requirements, open work rest and be allowed to run and heat substrate, the speed of service is 1 ~ 15m/min,
The present invention preferably 3 ~ 8m/min；Silicon is similar to preheating chamber, and temperature is preferably 150 ~ 350 DEG C, but is not limited to this.
In the present invention, the cleaning and pre-sputtering operation are carried out after technique Vacuum Deposition requirement is reached.Specifically, it is such as front
It is described, when vacuum reaches 3 × 10-2Pa~5×10-5When in the range of Pa, you can carry out cleaning operation, its objective is to remove silicon chip
The pollutant on surface, is that plated film is prepared.Scavenging period is preferably 1 ~ 30min, more preferably 5 ~ 15min.Cleaning is treated after finishing
Air pressure and temperature stabilization can carry out pre-sputtering operation in process value, i.e., directly open sputtering operation, but do not collect sputtering sedimentation
Thing.The purpose of pre-sputtering is to remove sputtering source（That is target）The pollutant on surface, is easy to follow-up uniform and stable plated film, and after ensureing
Impurity is not introduced in the continuous passivation layer for being formed.Under preferable case, the pre-sputtering time is 10 ~ 50min, more preferably 20 ~ 40min.
After the completion of pre-sputtering, you can carry out vacuum coating to the shady face of silicon base, formed on the shady face of silicon base
Passivation layer.In the present invention, the plated film can adopt vacuum evaporation or vacuum sputtering, it is preferred to use vacuum sputtering.
As it was previously stated, in the present invention, the Coating Materials that vacuum coating is adopted is metal-doped silicon oxide target, doping metals are
Aluminium and/or tin.Under preferable case, in the metal-doped silicon oxide target, on the basis of the gross mass of metal-doped silica, its
The content of middle doping metals is 5 ~ 30wt%, more preferably 10 ~ 20wt%.
As it was previously stated, containing hydrogen or ammonia in the atmosphere of the vacuum coating.Under preferable case, the vacuum coating
In atmosphere, the volume content of hydrogen or ammonia is 12.5 ~ 36%, more preferably 15 ~ 25%.I.e. hydrogen or ammonia are only in vacuum coating
Atmosphere in account for partial volume, in atmosphere residual gas then be protective gas.In the present invention, the protective gas is this area skill
The various protective gas that art personnel commonly use, for example, may be selected from nitrogen or at least one in inert gas.Wherein inert gas is
The corresponding gas of periodic table of elements group 0 element, such as helium, argon gas etc., but it is not limited to this.The vacuum coating time is preferably 5
~ 120min, more preferably 10 ~ 60min.
In the present invention, by plated film target and plated film atmosphere from specific materials so that the system provided using the present invention
Contain more effective deactivation matter, including but not limited to silica, silicon nitride, aluminum oxide, oxygen in the passivation layer that Preparation Method is formed
Change tin, aluminium simple substance, tin simple substance, the silica of doping hydrogen, the silicon nitride of doping hydrogen.It was found by the inventors of the present invention that adopting this
The passivation layer that the plated film target and plated film atmosphere of bright middle specific materials is formed in silicon substrate bottom back side by vacuum coating, can be effective
Passivation crystal boundary, reduction defect, can effectively increase minority carrier life time again, increase back reflection.
According to the preparation method that the present invention is provided, after forming aforementioned passivation layer, then the back of the body is re-formed in the passivation layer surface
Face electrode, and front electrode layer is formed on the surface of antireflective coating, you can obtain the crystal silicon solar energy battery.Form the back side
Electrode, the method for positive electricity electrode are the common various methods in this area, for example, using d.c. sputtering, evaporation or can print；This
The backplate, positive electricity electrode are formed by d.c. sputtering preferably in invention.
As a kind of preferred embodiment of the present invention, after back electrode layer is formed, also include to back electrode layer
The step of being made annealing treatment.Annealing can be carried out in filming equipment, also can be processed in annealing furnace.After annealing,
Passivation layer can be preferably passivated to silicon chip, meanwhile, electrode layer Particle diffusion progress passivation layer forms metal ion gradients and increases
Plus structure, be more beneficial for the transport of carrier, form ohmic contact structure.Under preferable case, the temperature of the annealing
For 100 ~ 500 DEG C, more preferably 200 ~ 400 DEG C.
In order that technical problem solved by the invention, technical scheme and beneficial effect become more apparent, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only to explain
The present invention, is not intended to limit the present invention.
Embodiment 1
（1）Learnt from else's experience making herbs into wool/diffusion/wet etching/plasma enhanced chemical vapor deposition（PECVD）At plating silicon nitride
Silicon substrate of the crystal silicon chip of reason as the present embodiment, its size be 156 × 156mm, the silicon nitride anti-reflecting film of its surface attachment
Thickness is 120nm.Then the silicon face for not plating silicon nitride anti-reflecting film is polished using chemical polishing.
（2）Above-mentioned silicon chip is sent into into preheating chamber, 20min is preheated using infrared lamp at 250 DEG C.By preheated silicon chip
Send into coating chamber, to first vacuumized in plated film room be filled with afterwards reacting gas to vacuum be 2 × 10-3Pa, temperature are 200 DEG C
When, then cleaning silicon chip 10min carries out pre-sputtering operation to target, and plated film target is silica-doping aluminium（Aluminium content in target
For 10wt%）, the pre-sputtering time is 25min.Reacting gas is the mixed gas containing nitrogen and ammonia（Ammonia in mixed gas
Volume content be 15%）, vacuum sputtering coating is then carried out to silicon chip, the sputter coating time is 20min, in the back of the body of silicon base
Face forms passivation layer of the thickness for 120nm.
（3）Adopt DC sputtering to form thickness over the passivation layer for 150nm argent back electrode, and splashed using direct current
Penetrate method and the argent positive electrode that thickness is 150nm is formed on silicon nitride anti-reflecting film.Then it is overall to be moved back in the lehr
Fire is processed, and annealing temperature is 300 DEG C, obtains the crystal silicon solar energy battery S1 of the present embodiment, and its structure is as shown in Figure 3.
Embodiment 2
（1）Learnt from else's experience making herbs into wool/diffusion/wet etching/plasma enhanced chemical vapor deposition（PECVD）At plating silicon nitride
Silicon substrate of the crystal silicon chip of reason as the present embodiment, its size be 156 × 156mm, the silicon nitride anti-reflecting film of its surface attachment
Thickness is 120nm.Then the silicon face for not plating silicon nitride anti-reflecting film is polished using chemical polishing.
（2）Above-mentioned silicon chip is sent into into preheating chamber, 20min is preheated using infrared lamp at 250 DEG C.By preheated silicon chip
Send into coating chamber, to first vacuumized in plated film room be filled with afterwards reacting gas to vacuum be 2 × 10-3Pa, temperature are 200 DEG C
When, then cleaning silicon chip 10min carries out pre- evaporation operation to target, and plated film target is silica-doping aluminium（Aluminium content in target
For 10wt%）, pre- evaporation time is 25min.Reacting gas is the mixed gas containing nitrogen and ammonia（Ammonia in mixed gas
Volume content be 15%）, vacuum evaporation plated film is then carried out to silicon chip, the evaporating coating time is 5min, at the back side of silicon base
Form passivation layer of the thickness for 50nm.
（3）Adopt DC sputtering to form thickness over the passivation layer for 150nm argent back electrode, and splashed using direct current
Penetrate method and the argent positive electrode that thickness is 150nm is formed on silicon nitride anti-reflecting film.Then it is overall to be moved back in the lehr
Fire is processed, and annealing temperature is 300 DEG C, obtains the crystal silicon solar energy battery S2 of the present embodiment, and its structure is as shown in Figure 3.
Embodiment 3
（1）Learnt from else's experience making herbs into wool/diffusion/wet etching/plasma enhanced chemical vapor deposition（PECVD）At plating silicon nitride
Silicon substrate of the crystal silicon chip of reason as the present embodiment, its size be 156 × 156mm, the silicon nitride anti-reflecting film of its surface attachment
Thickness is 120nm.Then the silicon face for not plating silicon nitride anti-reflecting film is polished using chemical polishing.
（2）Above-mentioned silicon chip is sent into into preheating chamber, 20min is preheated using infrared lamp at 250 DEG C.By preheated silicon chip
Send into coating chamber, to first vacuumized in plated film room be filled with afterwards reacting gas to vacuum be 2 × 10-3Pa, temperature are 200 DEG C
When, then cleaning silicon chip 10min carries out pre-sputtering operation to target, and plated film target is silica-doping tin（Theil indices in target
For 15wt%）, the pre-sputtering time is 25min.Reacting gas is the mixed gas containing nitrogen and ammonia（Ammonia in mixed gas
Volume content be 25%）, vacuum sputtering coating is then carried out to silicon chip, the sputter coating time is 20min, in the back of the body of silicon base
Face forms passivation layer of the thickness for 150nm.
（3）Adopt DC sputtering to form thickness over the passivation layer for 150nm argent back electrode, and splashed using direct current
Penetrate method and the argent positive electrode that thickness is 150nm is formed on silicon nitride anti-reflecting film.Then it is overall to be moved back in the lehr
Fire is processed, and annealing temperature is 300 DEG C, obtains the crystal silicon solar energy battery S3 of the present embodiment, and its structure is as shown in Figure 3.
Embodiment 4
（1）Learnt from else's experience making herbs into wool/diffusion/wet etching/plasma enhanced chemical vapor deposition（PECVD）At plating silicon nitride
Silicon substrate of the crystal silicon chip of reason as the present embodiment, its size be 156 × 156mm, the silicon nitride anti-reflecting film of its surface attachment
Thickness is 120nm.Then the silicon face for not plating silicon nitride anti-reflecting film is polished using chemical polishing.
（2）Above-mentioned silicon chip is sent into into preheating chamber, 20min is preheated using infrared lamp at 250 DEG C.By preheated silicon chip
Send into coating chamber, to first vacuumized in plated film room be filled with afterwards reacting gas to vacuum be 2 × 10-3Pa, temperature are 200 DEG C
When, then cleaning silicon chip 10min carries out pre-sputtering operation to target, and plated film target is silica-doping aluminium（Aluminium content in target
For 15wt%）, the pre-sputtering time is 25min.Reacting gas is the mixed gas containing nitrogen and hydrogen（Hydrogen in mixed gas
Volume content be 25%）, vacuum sputtering coating is then carried out to silicon chip, the sputter coating time is 20min, in the back of the body of silicon base
Face forms passivation layer of the thickness for 150nm.
（3）Adopt DC sputtering to form thickness over the passivation layer for 150nm argent back electrode, and splashed using direct current
Penetrate method and the argent positive electrode that thickness is 150nm is formed on silicon nitride anti-reflecting film.Then it is overall to be moved back in the lehr
Fire is processed, and annealing temperature is 300 DEG C, obtains the crystal silicon solar energy battery S4 of the present embodiment, and its structure is as shown in Figure 3.
Embodiment 5
（1）Learnt from else's experience making herbs into wool/diffusion/wet etching/plasma enhanced chemical vapor deposition（PECVD）At plating silicon nitride
Silicon substrate of the crystal silicon chip of reason as the present embodiment, its size be 156 × 156mm, the silicon nitride anti-reflecting film of its surface attachment
Thickness is 120nm.Then the silicon face for not plating silicon nitride anti-reflecting film is polished using chemical polishing.
（2）Above-mentioned silicon chip is sent into into preheating chamber, 20min is preheated using infrared lamp at 250 DEG C.By preheated silicon chip
Send into coating chamber, to first vacuumized in plated film room be filled with afterwards reacting gas to vacuum be 2 × 10-3Pa, temperature are 200 DEG C
When, then cleaning silicon chip 10min carries out pre-sputtering operation to target, and plated film target is silica-doping aluminium（Aluminium content in target
For 5wt%）, the pre-sputtering time is 10min.Reacting gas is the mixed gas containing nitrogen and ammonia（Ammonia in mixed gas
Volume content is 36%）, vacuum sputtering coating is then carried out to silicon chip, the sputter coating time is 50min, at the back side of silicon base
Form passivation layer of the thickness for 180nm.
（3）Adopt DC sputtering to form thickness over the passivation layer for 150nm argent back electrode, and splashed using direct current
Penetrate method and the argent positive electrode that thickness is 150nm is formed on silicon nitride anti-reflecting film.Then it is overall to be moved back in the lehr
Fire is processed, and annealing temperature is 400 DEG C, obtains the crystal silicon solar energy battery S5 of the present embodiment, and its structure is as shown in Figure 3.
Embodiment 6
（1）Learnt from else's experience making herbs into wool/diffusion/wet etching/plasma enhanced chemical vapor deposition（PECVD）At plating silicon nitride
Silicon substrate of the crystal silicon chip of reason as the present embodiment, its size be 156 × 156mm, the silicon nitride anti-reflecting film of its surface attachment
Thickness is 120nm.Then the silicon face for not plating silicon nitride anti-reflecting film is polished using chemical polishing.
（2）Above-mentioned silicon chip is sent into into preheating chamber, 20min is preheated using infrared lamp at 250 DEG C.By preheated silicon chip
Send into coating chamber, to first vacuumized in plated film room be filled with afterwards reacting gas to vacuum be 2 × 10-3Pa, temperature are 200 DEG C
When, then cleaning silicon chip 10min carries out pre-sputtering operation to target, and plated film target is silica-doping aluminium（Aluminium content in target
For 30wt%）, the pre-sputtering time is 50min.Reacting gas is the mixed gas containing nitrogen and ammonia（Ammonia in mixed gas
Volume content be 12.5%）, vacuum sputtering coating is then carried out to silicon chip, the sputter coating time is 100min, in silicon base
The back side forms passivation layer of the thickness for 200nm.
（3）Adopt DC sputtering to form thickness over the passivation layer for 150nm argent back electrode, and splashed using direct current
Penetrate method and the argent positive electrode that thickness is 150nm is formed on silicon nitride anti-reflecting film.Then it is overall to be moved back in the lehr
Fire is processed, and annealing temperature is 200 DEG C, obtains the crystal silicon solar energy battery S6 of the present embodiment, and its structure is as shown in Figure 3.
Embodiment 7
（1）Learnt from else's experience making herbs into wool/diffusion/wet etching/plasma enhanced chemical vapor deposition（PECVD）At plating silicon nitride
Silicon substrate of the crystal silicon chip of reason as the present embodiment, its size be 156 × 156mm, the silicon nitride anti-reflecting film of its surface attachment
Thickness is 120nm.Then the silicon face for not plating silicon nitride anti-reflecting film is polished using chemical polishing.
（2）Above-mentioned silicon chip is sent into into preheating chamber, 20min is preheated using infrared lamp at 250 DEG C.By preheated silicon chip
Send into coating chamber, to first vacuumized in plated film room be filled with afterwards reacting gas to vacuum be 2 × 10-3Pa, temperature are 200 DEG C
When, then cleaning silicon chip 10min carries out pre-sputtering operation to target, and plated film target is silica-doping aluminium（Aluminium content in target
For 10wt%）, the pre-sputtering time is 25min.Reacting gas is the mixed gas containing nitrogen and ammonia（Ammonia in mixed gas
Volume content be 15%）, vacuum sputtering coating is then carried out to silicon chip, the sputter coating time is 20min, in the back of the body of silicon base
Face forms passivation layer of the thickness for 120nm.
（3）Adopt DC sputtering to form thickness over the passivation layer for 150nm argent back electrode, and splashed using direct current
Penetrate method and the argent positive electrode that thickness is 150nm is formed on silicon nitride anti-reflecting film, obtain the crystalline silicon sun of the present embodiment
Energy battery S7, its structure are as shown in Figure 3.
Comparative example 1
（1）Learnt from else's experience making herbs into wool/diffusion/wet etching/plasma enhanced chemical vapor deposition（PECVD）At plating silicon nitride
Silicon substrate of the crystal silicon chip of reason as the present embodiment, its size be 156 × 156mm, the silicon nitride anti-reflecting film of its surface attachment
Thickness is 120nm.Then the silicon face for not plating silicon nitride anti-reflecting film is polished using chemical polishing.
（2）Adopt DC sputtering that argent back electrode of the thickness for 150nm is formed on the silicon face after polishing,
And adopt DC sputtering that argent positive electrode of the thickness for 150nm is formed on silicon nitride anti-reflecting film.Then it is overall to move back
Made annealing treatment in stove, annealing temperature is 300 DEG C, obtains the crystal silicon solar energy battery D1 of the present embodiment.
Comparative example 2
（1）Learnt from else's experience making herbs into wool/diffusion/wet etching/plasma enhanced chemical vapor deposition（PECVD）At plating silicon nitride
Silicon substrate of the crystal silicon chip of reason as the present embodiment, its size be 156 × 156mm, the silicon nitride anti-reflecting film of its surface attachment
Thickness is 120nm.Then the silicon face for not plating silicon nitride anti-reflecting film is polished using chemical polishing, and is adopted on burnishing surface
The silicon nitride passivation that thickness is 120nm is formed with PECVD.
（2）Adopt DC sputtering to form thickness over the passivation layer for 150nm argent back electrode, and splashed using direct current
Penetrate method and the argent positive electrode that thickness is 150nm is formed on silicon nitride anti-reflecting film.Then it is overall to be moved back in the lehr
Fire is processed, and annealing temperature is 300 DEG C, obtains the crystal silicon solar energy battery D2 of the present embodiment, and its structure is as shown in Figure 1.
Comparative example 3
（1）Learnt from else's experience making herbs into wool/diffusion/wet etching/plasma enhanced chemical vapor deposition（PECVD）At plating silicon nitride
Silicon substrate of the crystal silicon chip of reason as the present embodiment, its size be 156 × 156mm, the silicon nitride anti-reflecting film of its surface attachment
Thickness is 120nm.Then the silicon face for not plating silicon nitride anti-reflecting film is polished using chemical polishing, then first in the polishing
By thermal oxidation method in the silicon dioxide layer that deposit thickness is 30nm on face, then by atomic layer deposition method（ALD）In titanium dioxide
Continue alundum (Al2O3) layer of the deposit thickness for 50nm on silicon layer, deposit thickness is on alundum (Al2O3) finally by PECVD
The silicon nitride layer of 40nm, so as to form the passivation layer with three layer stacked structures in silicon chip back side.
（2）Adopt DC sputtering to form thickness over the passivation layer for 150nm argent back electrode, and splashed using direct current
Penetrate method and the argent positive electrode that thickness is 150nm is formed on silicon nitride anti-reflecting film.Then it is overall to be moved back in the lehr
Fire is processed, and annealing temperature is 300 DEG C, obtains the crystal silicon solar energy battery D3 of this comparative example, and its structure is as shown in Figure 2.
Performance test：
Following performance test is carried out respectively to crystal silicon solar energy battery sample S1-S7, D1-D3：
1st, open-circuit voltage
Using IEC 61646：2008 are tested, and the test equipment for using is the cell I-V tests of QuickSun
Instrument.
2nd, short circuit current
Using IEC 61646：2008 are tested, and the test equipment for using is the cell I-V tests of QuickSun
Instrument.
3rd, photoelectric transformation efficiency
Using IEC 61646：2008 are tested, and the test equipment for using is the cell I-V tests of QuickSun
Instrument.
4th, minority carrier lifetime
Tested using SEMILRB WT-2000 PVN test platforms.
Test result is as shown in table 1.
Table 1
。
The crystalline silicon sun that the preparation method provided using the present invention is prepared is can be seen that from the test result of table 1
Energy battery, its minority carrier life time are greatly prolonged, and the short circuit current and open-circuit voltage of battery effectively improve, so that crystalline silicon
The photoelectric transformation efficiency of solar cell is greatly improved, hence it is evident that better than the battery sample of comparative example.
Presently preferred embodiments of the present invention is the foregoing is only, not to limit the present invention, all essences in the present invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (15)
1. a kind of crystal silicon solar energy battery, it is characterised in that the crystal silicon solar energy battery includes the front for stacking gradually
Electrode, antireflective coating, silicon base, passivation layer and backplate；The passivation layer is formed by vacuum coating, the vacuum coating
Target be metal-doped silicon oxide target, doping metals are aluminium and/or tin, contain hydrogen or ammonia in the atmosphere of vacuum coating；
The passivation layer includes various deactivation matters, and various deactivation matters include but is not limited to silica, silicon nitride, aluminum oxide
And/or tin oxide, aluminium and/or tin simple substance, the silica of doping hydrogen or silicon nitride.
2. crystal silicon solar energy battery according to claim 1, it is characterised in that the thickness of the passivation layer is 30 ~
200nm。
3. crystal silicon solar energy battery according to claim 1, it is characterised in that the thickness of the backplate is 100 ~
200nm。
4. crystal silicon solar energy battery according to claim 1, it is characterised in that the antireflective coating is silicon nitride, its
Thickness is 50 ~ 500nm.
5. crystal silicon solar energy battery according to claim 1, it is characterised in that the thickness of the silicon base is 150 ~
325 microns.
6. the preparation method of the crystal silicon solar energy battery described in claim 1, it is characterised in that comprise the following steps：
S10, silicon substrate surface is carried out making herbs into wool, diffusion and wet etching, then on a surface of silicon base plate one layer subtract
Reflectance coating, and another surface is processed by shot blasting；
S20, will be positioned in vacuum coating room through the silicon base of step S10, pass through vacuum at which on the surface of polishing
Plated film plates last layer passivation layer；The target of the vacuum coating is metal-doped silicon oxide target, and doping metals are aluminium and/or tin,
Contain hydrogen or ammonia in the atmosphere of vacuum coating；
S30, passivation layer surface formed back electrode layer, and antireflective coating surface formed front electrode layer, obtain institute
State crystal silicon solar energy battery.
7. preparation method according to claim 6, it is characterised in that in step S10, the antireflective coating pass through PECVD
Formed；In step S20, the vacuum coating is vacuum sputtering or vacuum evaporation.
8. the preparation method according to claim 6 or 7, it is characterised in that in step S20, the metal-doped silica
In target, on the basis of the gross mass of metal-doped silica, wherein the content of doping metals is 5 ~ 30wt%.
9. the preparation method according to claim 6 or 7, it is characterised in that in step S20, the atmosphere of the vacuum coating
In, the volume content of hydrogen or ammonia is 12.5 ~ 36%.
10. preparation method according to claim 9, it is characterised in that in step S20, in the atmosphere of the vacuum coating
Also contain protective gas, at least one of the protective gas in nitrogen or inert gas.
11. preparation methods according to claim 6 or 7, it is characterised in that in step S20, the vacuum coating time be 5 ~
120min。
12. preparation methods according to claim 6, it is characterised in that in step S20, before vacuum coating, also include
Silicon substrate surface is carried out preheating successively, is cleaned and the step of pre-sputtering；The temperature of the preheating is 200 ~ 400 DEG C, during cleaning
Between be 1 ~ 30min, the pre-sputtering time be 10 ~ 50min.
13. preparation methods according to claim 12, it is characterised in that the cleaning and pre-sputtering are entered under vacuum conditions
OK；The vacuum of the vacuum state is 3 × 10-2Pa～5 × 10-5Pa。
14. preparation methods according to claim 6, it is characterised in that in step S30, form back electrode layer and front
The method of electrode layer is DC sputtering.
15. preparation methods according to claim 6 or 14, it is characterised in that in step S30, are forming back electrode layer
Afterwards, also include the step of making annealing treatment to back electrode layer；The temperature of the annealing is 100 ~ 500 DEG C.
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| CN101724812A (en) * | 2008-10-24 | 2010-06-09 | 山东力诺新材料有限公司 | Coating and preparation method thereof |
| CN102598283A (en) * | 2009-09-04 | 2012-07-18 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same |
| CN102800745A (en) * | 2012-07-04 | 2012-11-28 | 天威新能源控股有限公司 | Method for producing rear passivation double-sided solar cell |
| CN102881776A (en) * | 2012-10-15 | 2013-01-16 | 浙江正泰太阳能科技有限公司 | Method for preparing back surface passivation crystalline silicon solar cell and solar cell |
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2013
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101724812A (en) * | 2008-10-24 | 2010-06-09 | 山东力诺新材料有限公司 | Coating and preparation method thereof |
| CN102598283A (en) * | 2009-09-04 | 2012-07-18 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same |
| CN102800745A (en) * | 2012-07-04 | 2012-11-28 | 天威新能源控股有限公司 | Method for producing rear passivation double-sided solar cell |
| CN102881776A (en) * | 2012-10-15 | 2013-01-16 | 浙江正泰太阳能科技有限公司 | Method for preparing back surface passivation crystalline silicon solar cell and solar cell |
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