CN108346707A - A kind of hetero-junctions crystal silicon double-side solar cell structure that entering light region is blocked without heavily doped layer - Google Patents
A kind of hetero-junctions crystal silicon double-side solar cell structure that entering light region is blocked without heavily doped layer Download PDFInfo
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- CN108346707A CN108346707A CN201810198962.0A CN201810198962A CN108346707A CN 108346707 A CN108346707 A CN 108346707A CN 201810198962 A CN201810198962 A CN 201810198962A CN 108346707 A CN108346707 A CN 108346707A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 44
- 239000010703 silicon Substances 0.000 title claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 239000013078 crystal Substances 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 9
- 230000005684 electric field Effects 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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Abstract
A kind of hetero-junctions crystal silicon double-side solar cell structure that entering light region is blocked without heavily doped layer, using N-shaped crystal silicon chip as substrate, transmitting pole-face is divided into emitter conductive region and passivation entering light region：Emitter conductive region is made of intrinsic amorphous silicon passivation layer, heavily-doped p-type amorphous silicon layer, metal grid lines I successively outward substrate, and passivation entering light region is penetrated a layer I by passivated reflection reducing and constituted；Back of the body electric field surface is divided into passivation entering light region and back of the body electric field conductive region：Entering light region is followed successively by highly doped n-type crystal silicon layer II by substrate outward, passivated reflection reducing penetrates a layer II for passivation；Back of the body electric field conductive region is followed successively by highly doped n-type crystal silicon layer II, metal grid lines II by substrate outward.The present invention obtains the characteristic of high open circuit voltage and high short circuit current under the premise of keeping the characteristic of the two-sided entering light of crystal-silicon solar cell, improves the generating capacity of crystal-silicon solar cell to the greatest extent.
Description
Technical field
The invention belongs to solar cell field and field of semiconductor devices.It is related to the technology of preparing of solar cell.
Background technology
For crystal silicon heterojunction solar battery, usual structure is in N-shaped making herbs into wool crystalline silicon substrate, is intrinsic on one side
Amorphous silicon passivation layer, p-type amorphous silicon emitter layer, TCO transparent conductive films, silver grating line, in addition one side is that intrinsic amorphous silicon is blunt
Change the structure of layer, N-shaped amorphous silicon emitter layer, TCO transparent conductive films, silver grating line.The advantages of solar cell of the structure is
Open-circuit voltage is high, the disadvantage is that tco layer and intrinsic and doped amorphous silicon layer cause prodigious optical absorption loss, especially non-crystalline silicon
Layer, causes the short circuit current of such solar cell not high always.How by the raising of device structure design and technology of preparing come
The short circuit current for improving such solar cell is an important directions of its performance boost.In addition, used in the structure solar cell
A kind of essential element of TCO materials is indium, and reserves are seldom on earth, and price is very high, is the cost for leading to the solar cell
One of very high principal element, so the dosage for reducing TCO is also the improved important directions of the structure solar cell.
Invention content
The purpose of the present invention is to propose to the two-sided sun electricity of hetero-junctions crystalline silicon that a kind of entering light region is blocked without heavily doped layer
Pool structure further increases crystal silicon double-side solar cell by improving the short circuit current of crystal silicon heterojunction solar battery
Generating efficiency；Reduce the consumption of valuable raw material.
The present invention is achieved by the following technical solutions.
The hetero-junctions crystal silicon double-side solar cell structure that a kind of entering light region of the present invention is blocked without heavily doped layer,
With N-shaped crystal silicon chip（5）As substrate, transmitting pole-face is divided into emitter-conductive region and passivation-entering light region：Emitter-
Conductive region is by substrate outward successively by intrinsic amorphous silicon passivation layer（3）, heavily-doped p-type amorphous silicon layer（2）, metal grid lines I（1）
It constitutes, a layer I is penetrated in passivation-entering light region by passivated reflection reducing（4）It constitutes, the two region cross-distributions and is not overlapped.
To improve metal grid lines I（1）With heavily-doped p-type amorphous silicon layer（2）Between contact electric conductivity, preferably the two it
Between be inserted into a transition tco layer.
Passivated reflection reducing of the present invention penetrates a layer I（4）It is preferred that silicon dioxide/silicon nitride laminated film.
The hetero-junctions crystal silicon double-side solar cell structure that a kind of entering light region of the present invention is blocked without heavily doped layer,
For two-sided entering light solar cell, positive and negative electrode is located at N-shaped crystal silicon chip（5）Two surfaces of substrate.Solar cell exists
Emit the other one side except pole-face（Carry on the back electric field surface）Structure is divided into passivation-entering light region and back of the body electric field-conductive region：Passivation-
Entering light region is followed successively by highly doped n-type crystal silicon layer II by substrate outward（6）, passivated reflection reducing penetrate a layer II（7）；Carry on the back electric field-conduction
Region is followed successively by highly doped n-type crystal silicon layer II by substrate outward（6）, metal grid lines II（8）.The two region cross-distributions and
It is not overlapped.
Wherein, passivated reflection reducing penetrates a layer II（7）It is preferred that silicon nitride.
Further, it is the performance of raising device, N-shaped crystal silicon chip of the present invention（5）Can with two-sided making herbs into wool, with into
One step improves solar cell short circuit current.
Further, N-shaped crystal silicon chip（5）Two-sided making herbs into wool situation can be different, use reduced size gold word on one side
The matte of tower structure, in addition one side is using the pyramid matte of large-size or without pyramidal polishing structure.
Further, there are metal grid lines（Metal grid lines I, metal grid lines II）Region can polish or do larger size gold word
The matte of tower improves the open-circuit voltage of solar cell to reduce recombination loss.
Further, device surface metal grid lines（Metal grid lines I, metal grid lines II）Total area coverage ratio is preferably 1 ~
3%, to improve the short circuit current of solar cell and ensure electric conductivity good enough.
Invention has the technical effect that：Under the premise of keeping the characteristic of the two-sided entering light of crystal-silicon solar cell, while obtaining height
The characteristic of open-circuit voltage and high short circuit current improves the generating capacity of crystal-silicon solar cell to the greatest extent.Its mechanism is logical
The amorphous silicon emitter and supporting structure crossed under metal grid lines area coverage obtain high open-circuit voltage；In not metal grid lines
Place can reduce shading using the structure of surface antireflective passivation layer compared to conventional amorphous silicon/crystalline silicon heterojunction solar battery
Loss, photo-generated carrier is efficiently translated by the sunlight of more incidences.The photohole generated in device concentrates flow direction transmitting
Polar region domain forms the high current effect of similar concentrator solar cell, can further improve the Built-in potential of solar cell, to
Further increase the voltage of solar cell.In addition, the present invention can completely avoid the use of valuable TCO compared to HIT structures.
Description of the drawings
Attached drawing 1 is schematic structural view of the invention.Wherein：1 is metal grid lines I；2 be heavily-doped p-type amorphous silicon layer；3 be this
Levy amorphous silicon layer；4 penetrate a layer I for passivated reflection reducing；5 be N-shaped crystal silicon chip；6 be highly doped n-type crystal silicon layer II；7 be passivated reflection reducing
Penetrate a layer II；8 be metal grid lines II.
Specific implementation mode
The present invention will be described further by following embodiment.
Embodiment 1.
The hetero-junctions crystal silicon double-side solar cell knot that a kind of entering light region as shown in Fig. 1 is blocked without heavily doped layer
Structure.N-shaped crystal silicon chip（5）The two-sided pyramid structure matte for being all made of average ~ 1 micron, highly doped n-type crystal silicon layer II
（6）Thickness is 100nm, and passivated reflection reducing penetrates a layer I（4）A layer II is penetrated with passivated reflection reducing（7）It is all made of silicon nitride film, metal grid lines I
（1）With metal grid lines II（8）The Ag grid line structures of primary and secondary gratings cooperation are all made of, masked area is the 2% of silicon chip surface product.The knot
Structure is two-sided very excellent into light characteristic, i.e., any one side can be used as main into smooth surface.Such as single side entering light solar cell is used as to make
With then can plating one layer of metal in shady face and be used as reflective layer, short circuit current of the increase as single side entering light solar cell.
Embodiment 2.
The hetero-junctions crystal silicon double-side solar cell knot that a kind of entering light region as shown in Fig. 1 is blocked without heavily doped layer
Structure.N-shaped crystal silicon chip（5）Two-sided passivation-entering light region be all made of average ~ 1 micron of pyramid structure matte, have grid line
The area of covering is all made of chemical polishing structure.Highly doped n-type crystal silicon layer II（6）Thickness is 200nm, and passivated reflection reducing penetrates a layer I
（4）A layer II is penetrated with passivated reflection reducing（7）It is all made of silicon dioxide/silicon nitride laminated film, metal grid lines I（1）With metal grid lines II
（8）The Ti/Pd/Ag composition metal grid line structures of primary and secondary gratings cooperation are all made of, masked area is the 1% of silicon chip surface product.The structure
Two-sided very excellent into light characteristic, i.e., any one side can be used as main into smooth surface.Such as used as single side entering light solar cell,
Then one layer of metal can be plated as reflective layer in shady face, increase the short circuit current as single side entering light solar cell.
Claims (8)
1. the hetero-junctions crystal silicon double-side solar cell structure that a kind of entering light region is blocked without heavily doped layer, it is characterized in that with N-shaped
Crystal silicon chip（5）As substrate, transmitting pole-face is divided into emitter-conductive region and passivation-entering light region：Emitter-conduction
Region is by substrate outward successively by intrinsic amorphous silicon passivation layer（3）, heavily-doped p-type amorphous silicon layer（2）, metal grid lines I（1）Structure
At a layer I is penetrated in passivation-entering light region by passivated reflection reducing（4）It constitutes, the two region cross-distributions and is not overlapped；
It is carried on the back electric field surface and is divided into passivation-entering light region and back of the body electric field-conductive region：Passivation-entering light region by substrate outward successively
For highly doped n-type crystal silicon layer II（6）, passivated reflection reducing penetrate a layer II（7）；Back of the body electric field-conductive region is attached most importance to successively outward by substrate
Adulterate N-shaped crystal silicon layer II（6）, metal grid lines II（8）, the two region cross-distributions and it is not overlapped.
2. the hetero-junctions crystal silicon double-side solar cell that a kind of entering light region according to claim 1 is blocked without heavily doped layer
Structure, it is characterized in that in metal grid lines I（1）With heavily-doped p-type amorphous silicon layer（2）Between be inserted into a transition tco layer.
3. the hetero-junctions crystal silicon double-side solar cell that a kind of entering light region according to claim 1 is blocked without heavily doped layer
Structure, it is characterized in that the passivated reflection reducing penetrates a layer I（4）For silicon dioxide/silicon nitride laminated film.
4. the hetero-junctions crystal silicon double-side solar cell that a kind of entering light region according to claim 1 is blocked without heavily doped layer
Structure, it is characterized in that the passivated reflection reducing penetrates a layer II（7）For silicon nitride.
5. the hetero-junctions crystal silicon double-side solar cell that a kind of entering light region according to claim 1 is blocked without heavily doped layer
Structure, it is characterized in that the N-shaped crystal silicon chip（5）For two-sided making herbs into wool.
6. the hetero-junctions crystal silicon double-side solar cell that a kind of entering light region according to claim 1 is blocked without heavily doped layer
Structure, it is characterized in that the N-shaped crystal silicon chip（5）Two-sided making herbs into wool situation：Small size pyramid structure is used on one side
Matte, in addition one side is using large-sized pyramid matte or without pyramidal polishing structure.
7. the hetero-junctions crystal silicon double-side solar cell that a kind of entering light region according to claim 1 is blocked without heavily doped layer
Structure, it is characterized in that there is metal grid lines region to polish or do the pyramidal matte of large scale.
8. the hetero-junctions crystal silicon double-side solar cell that a kind of entering light region according to claim 1 is blocked without heavily doped layer
Structure, it is characterized in that the total area coverage ratio of device surface metal grid lines is 1 ~ 3%.
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| CN201810198962.0A CN108346707A (en) | 2018-03-12 | 2018-03-12 | A kind of hetero-junctions crystal silicon double-side solar cell structure that entering light region is blocked without heavily doped layer |
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| CN201810198962.0A CN108346707A (en) | 2018-03-12 | 2018-03-12 | A kind of hetero-junctions crystal silicon double-side solar cell structure that entering light region is blocked without heavily doped layer |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1251210A (en) * | 1997-03-21 | 2000-04-19 | 三洋电机株式会社 | Photovoltaic element and method for mfg. same |
| CN101447518A (en) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
| CN102148280A (en) * | 2010-02-10 | 2011-08-10 | 上海空间电源研究所 | Novel silicon substrate heterojunction solar cell |
| CN104393104A (en) * | 2014-10-17 | 2015-03-04 | 深圳华中科技大学研究院 | Processing technology for HIT solar cell texturization |
| CN104412394A (en) * | 2012-06-29 | 2015-03-11 | 洛桑联邦理工学院 | Solar cell |
| CN105322043A (en) * | 2015-11-16 | 2016-02-10 | 南昌大学 | Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor |
-
2018
- 2018-03-12 CN CN201810198962.0A patent/CN108346707A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1251210A (en) * | 1997-03-21 | 2000-04-19 | 三洋电机株式会社 | Photovoltaic element and method for mfg. same |
| CN101447518A (en) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
| CN102148280A (en) * | 2010-02-10 | 2011-08-10 | 上海空间电源研究所 | Novel silicon substrate heterojunction solar cell |
| CN104412394A (en) * | 2012-06-29 | 2015-03-11 | 洛桑联邦理工学院 | Solar cell |
| CN104393104A (en) * | 2014-10-17 | 2015-03-04 | 深圳华中科技大学研究院 | Processing technology for HIT solar cell texturization |
| CN105322043A (en) * | 2015-11-16 | 2016-02-10 | 南昌大学 | Crystalline silicon solar cell capable of realizing double-side light entrance and preparation method therefor |
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Application publication date: 20180731 |