CN106409977A - Solar cell silicon wafer cleaning method and solar cell preparation method - Google Patents
Solar cell silicon wafer cleaning method and solar cell preparation method Download PDFInfo
- Publication number
- CN106409977A CN106409977A CN201611025279.4A CN201611025279A CN106409977A CN 106409977 A CN106409977 A CN 106409977A CN 201611025279 A CN201611025279 A CN 201611025279A CN 106409977 A CN106409977 A CN 106409977A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- silicon chip
- mass percent
- hydrogen peroxide
- hydrochloric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 237
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 237
- 239000010703 silicon Substances 0.000 title claims abstract description 237
- 238000004140 cleaning Methods 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 156
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 148
- 239000011259 mixed solution Substances 0.000 claims abstract description 72
- 238000005530 etching Methods 0.000 claims abstract description 21
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 210000004027 cell Anatomy 0.000 claims description 209
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 93
- 239000002253 acid Substances 0.000 claims description 57
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 55
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 33
- 239000000243 solution Substances 0.000 claims description 22
- 229910001868 water Inorganic materials 0.000 claims description 17
- 239000008367 deionised water Substances 0.000 claims description 14
- 229910021641 deionized water Inorganic materials 0.000 claims description 14
- 239000000654 additive Substances 0.000 claims description 13
- 230000000996 additive effect Effects 0.000 claims description 13
- 229910021529 ammonia Inorganic materials 0.000 claims description 13
- 238000007654 immersion Methods 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000002242 deionisation method Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 6
- 230000000536 complexating effect Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 2
- 239000003344 environmental pollutant Substances 0.000 abstract 1
- 231100000719 pollutant Toxicity 0.000 abstract 1
- 238000005406 washing Methods 0.000 description 12
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 7
- 238000000137 annealing Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000002000 scavenging effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002791 soaking Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000010668 complexation reaction Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- UHLRPXXFPYMCAE-UHFFFAOYSA-N 4-isopropylcalix[4]arene Chemical group C1C(C=2O)=CC(C(C)C)=CC=2CC(C=2O)=CC(C(C)C)=CC=2CC(C=2O)=CC(C(C)C)=CC=2CC2=CC(C(C)C)=CC1=C2O UHLRPXXFPYMCAE-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention discloses a solar cell silicon wafer cleaning method and a solar cell preparation method. The cleaning method comprises: performing precleaning of the solar cell silicon wafer to allow the surface of the solar cell silicon wafer to generate oxidation; and employing the mixed solution of hydrofluoric acid, hydrogen peroxide and hydrochloric acid to perform etching cleaning of the solar cell silicon wafer after precleaning. According to the embodiment of the invention, on the basis of the micro-etch effect on the solar cell silicon wafer through adoption of the hydrofluoric acid and the hydrogen peroxide, the residual metal ions can be dissolved through addition of the complexing action of the hydrochloric acid on the metal ions to further enhance the cleaning effect on the metal pollutant at the surface of the solar cell silicon wafer so as to reduce the recombination of the metal ions at the surface of the solar cell silicon wafer and the minority carriers in the solar cell silicon wafer, improve the lives of the minority carriers in the solar cell silicon wafer and improve the efficiency of the solar cell.
Description
Technical field
The present invention relates to technical field of solar, espespecially a kind of cleaning method of silicon chip of solar cell, solaode
Preparation method.
Background technology
Solaode is a kind of semiconductor device that can convert solar energy into electric energy, solar-electricity under illumination condition
Photogenerated current can be produced inside pond, by electrode, electric energy be exported.In recent years, manufacture of solar cells technology constantly improves, raw
Produce cost constantly to reduce, conversion efficiency improves constantly, solar cell power generation, and that is, the application of photovoltaic generation is increasingly extensive and becomes
The important energy source of supply of electric power, silicon heterogenous solar battery technology is exactly a kind of new high-efficiency battery technology.
The Wafer Cleaning of existing high-efficiency battery is generally RCA cleaning technique, and RCA is that one kind is typical, is still the most general so far
All over the wet chemical cleans method using, that is, first with ammonia (NH3·H2) and hydrogen peroxide (H O2O2) mixed solution, to silicon chip
It is removed the cleaning of impurities on surface of silicon chip, to remove Organic substance, granule and metallic element of silicon chip surface etc.；Then utilize
H2O2With hydrochloric acid (HCl), silicon chip is aoxidized and complexation is processed, to remove the metallic atom of silicon chip surface；Finally utilize hydrogen fluorine
Sour (HF) solution, to remove the oxide layer of silicon chip surface；The final step of cleaning is also to be cleaned with HF solution.
Existing RCA cleaning technique can meet the diffusion requirement to silicon chip surface cleanliness factor for the crystalline silicon cell, amorphous substantially
The built in field (electric field that PN junction is formed) of silicon/monocrystalline silicon heterojunction solar cell is in silicon chip surface, the interfacial state meeting on surface
There is very important impact to battery performance, therefore such battery has higher requirement to the surface cleanliness after cleaning.
But some metal impurities may be contained inside HF solution itself in existing silicon wafer cleaning method at present, such as copper from
Son etc., introduces new impurity while etching oxidation silicon, or above cleans not thorough, there are some metal ions residual
Stay, the surface recombination of minority carrier can be increased, minority carrier life time can be reduced, affect open-circuit voltage, and then affect cell photoelectric and turn
Change efficiency.
Therefore, how to reduce the metallic pollution on silicon chip of solar cell surface after cleaning, improving cleaning performance has become this
The problem of skilled person's urgent need to resolve.
Content of the invention
In view of this, the embodiment of the present invention provides a kind of cleaning method of silicon chip of solar cell, the system of solaode
Preparation Method, can strengthen the cleaning performance to silicon chip of solar cell surface metal contaminants further, and then improves solar energy
The efficiency of battery.
Therefore, embodiments provide a kind of cleaning method of silicon chip of solar cell, including：
Silicon chip of solar cell is carried out with prerinse makes described silicon chip of solar cell surface produce oxidation；
Mixed solution using Fluohydric acid., hydrogen peroxide and hydrochloric acid enters to the silicon chip of solar cell after described prerinse
Row etch cleaner.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, the mixed solution using Fluohydric acid., hydrogen peroxide and hydrochloric acid is carried out to the silicon chip of solar cell after described prerinse
Etch cleaner, specifically includes：
Silicon chip of solar cell after described prerinse is put in the mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid
Soak after Preset Time performs etching cleaning and take out, and deionized water is rinsed to described silicon chip of solar cell.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in the mixed solution of described Fluohydric acid., hydrogen peroxide and hydrochloric acid, the mass percent of described Fluohydric acid. and the matter of hydrogen peroxide
Amount percentage ratio is identical.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in the mixed solution of described Fluohydric acid., hydrogen peroxide and hydrochloric acid, the mass percent of described Fluohydric acid. is for 0.1wt% extremely
2wt%, the mass percent of described hydrogen peroxide is 0.1wt% to 2wt%, and the mass percent of described hydrochloric acid is for 0.5wt% extremely
5wt%.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in the mixed solution of described Fluohydric acid., hydrogen peroxide and hydrochloric acid, the mass percent of described Fluohydric acid. is for 1wt% extremely
1.5wt%, the mass percent of described hydrogen peroxide is 1wt% to 1.5wt%, and the mass percent of described hydrochloric acid is 1.5wt%
To 3wt%.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in the mixed solution of described Fluohydric acid., hydrogen peroxide and hydrochloric acid, the mass percent of described Fluohydric acid. is 0.1wt%, institute
The mass percent stating hydrogen peroxide is 0.1wt%, and the mass percent of described hydrochloric acid is 0.5wt%；Or,
The mass percent of described Fluohydric acid. is 2wt%, and the mass percent of described hydrogen peroxide is 2wt%, described hydrochloric acid
Mass percent be 5wt%；Or,
The mass percent of described Fluohydric acid. is 1wt%, and the mass percent of described hydrogen peroxide is 1wt%, described hydrochloric acid
Mass percent be 3wt%.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, immersion Preset Time in the mixed solution of described Fluohydric acid., hydrogen peroxide and hydrochloric acid for the described silicon chip of solar cell is
0.5min to 10min.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, silicon chip of solar cell is carried out with prerinse and makes described silicon chip of solar cell surface produce oxidation, specifically include：
Silicon chip of solar cell is put into soak in ammonia and the mixed solution of hydrogen peroxide and takes out after Preset Time, and spend
Ionized water is rinsed to described silicon chip of solar cell；
The silicon chip of solar cell completing above-mentioned steps is put into when soaking default in hydrochloric acid and the mixed solution of hydrogen peroxide
Between described silicon chip of solar cell surface is taken out after producing oxidation, and deionized water is entered to described silicon chip of solar cell
Row rinses；
Before prerinse is carried out to silicon chip of solar cell, also include：
Silicon chip of solar cell is put into soak in sodium hydroxide solution and takes out after Preset Time, and deionized water is to institute
State silicon chip of solar cell to be rinsed；
The silicon chip of solar cell completing above-mentioned steps is put in sodium hydroxide and the mixed solution of flocking additive,
Take out after Preset Time, and deionized water is rinsed to described silicon chip of solar cell.
In a kind of possible implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in the mixed solution of described ammonia and hydrogen peroxide, the mass percent of described ammonia is 29wt%, described hydrogen peroxide
Mass percent is 30wt%；
In the mixed solution of described hydrochloric acid and hydrogen peroxide, the mass percent of described hydrochloric acid is 37wt%, described dioxygen
The mass percent of water is 30wt%；
In described sodium hydroxide solution, the mass percent of described sodium hydroxide is 10wt% to 30wt%；
In the mixed solution of described sodium hydroxide and flocking additive, the mass percent of described sodium hydroxide is
5wt%, the percent by volume of described flocking additive is 0.3vol%.
The embodiment of the present invention additionally provides a kind of preparation method of solaode, on provided in an embodiment of the present invention
The cleaning method stated.
The beneficial effect of the embodiment of the present invention includes：
A kind of cleaning method of silicon chip of solar cell provided in an embodiment of the present invention, the preparation method of solaode,
This cleaning method includes：Silicon chip of solar cell is carried out with prerinse makes silicon chip of solar cell surface produce oxidation；Using
The mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid performs etching cleaning to the silicon chip of solar cell after prerinse.This
Using Fluohydric acid. and hydrogen peroxide, the micro etch of silicon chip of solar cell is being acted in the above-mentioned cleaning method that bright embodiment provides
On the basis of, add the complexing to metal ion for the hydrochloric acid again, the metal ion of residual can be dissolved, it is right to strengthen further
The cleaning performance of silicon chip of solar cell surface metal contaminants, so reduce silicon chip of solar cell surface metal ion with
Being combined of few son in silicon chip of solar cell, improves the life-span of few son in silicon chip of solar cell, thus improving solar-electricity
The efficiency in pond.
Brief description
Fig. 1 is a kind of one of cleaning method flow chart of silicon chip of solar cell provided in an embodiment of the present invention；
Fig. 2 is the two of the cleaning method flow chart of a kind of silicon chip of solar cell provided in an embodiment of the present invention；
Fig. 3 is the three of the cleaning method flow chart of a kind of silicon chip of solar cell provided in an embodiment of the present invention；
Fig. 4 is the four of the cleaning method flow chart of a kind of silicon chip of solar cell provided in an embodiment of the present invention；
Fig. 5 is the five of the cleaning method flow chart of a kind of silicon chip of solar cell provided in an embodiment of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawings, the specific embodiment party to the cleaning method of silicon chip of solar cell provided in an embodiment of the present invention
Formula is described in detail.
Embodiments provide a kind of cleaning method of silicon chip of solar cell, as shown in figure 1, specifically including following
Step：
S101, silicon chip of solar cell is carried out prerinse make silicon chip of solar cell surface produce oxidation；
S102, using Fluohydric acid., hydrogen peroxide and hydrochloric acid mixed solution to the silicon chip of solar cell after prerinse
Perform etching cleaning.
A kind of cleaning method of silicon chip of solar cell provided in an embodiment of the present invention includes：First to solaode silicon
Piece carries out prerinse and makes silicon chip of solar cell surface produce oxidation；Then adopt the mixing of Fluohydric acid., hydrogen peroxide and hydrochloric acid
Solution performs etching cleaning to the silicon chip of solar cell after prerinse.Above-mentioned cleaning method provided in an embodiment of the present invention
In on the basis of the micro etch of silicon chip of solar cell being acted on using Fluohydric acid. and hydrogen peroxide, add hydrochloric acid to metal again
The complexing of ion, can dissolve the metal ion of residual, strengthen further to silicon chip of solar cell surface metal contamination
The cleaning performance of thing, and then reduce few sub the answering in metal ion and the silicon chip of solar cell on silicon chip of solar cell surface
Closing, particularly the passivation effect at amorphous silicon/monocrystalline silicon heterojunction battery a-Si/c-Si interface being significantly improved, thus improving
The open-circuit voltage of the life-span of few son and battery in silicon chip of solar cell, thus improve the efficiency of solaode.
It should be noted that carrying out prewashed silicon chip of solar cell in step S101 is the silicon not depositing functional material
Piece, i.e. the silicon chip of not yet processed；Fluohydric acid. and hydrogen peroxide have micro etch effect to silicon chip of solar cell, are due to double
Oxygen water has oxidisability, silica can be melted into the oxide of silicon, Fluohydric acid. can dissolve the oxide of silicon, so that producing to silicon
Micro etch effect.Hydrochloric acid has complexing to metal ion, is because metal ion can form network with chloride ion complexation
Compound and dissolve.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, such as Fig. 2
Shown, step S102 adopts the mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid to the silicon chip of solar cell after prerinse
Perform etching cleaning, specifically can realize in the following way：
S201, the silicon chip of solar cell after prerinse is put into the mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid
Middle immersion Preset Time takes out after performing etching cleaning, and deionized water is rinsed to silicon chip of solar cell.
It should be noted that above-mentioned steps S201 can carry out 1-3 wash cycles, that is, in Fluohydric acid., hydrogen peroxide and salt
Rinsed with deionization after soaking in the mixed solution of acid, be repeated in circulation 1-3 time；It is preferred that carrying out 3 wash cycles, can
To reach more preferable cleaning performance.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, in hydrogen
In the mixed solution of fluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of Fluohydric acid. and the mass percent of hydrogen peroxide can be arranged
For identical, that is, the mass percent of Fluohydric acid. and hydrogen peroxide is 1:When 1, cleaning performance is best.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, in hydrogen
In the mixed solution of fluoric acid, hydrogen peroxide and hydrochloric acid, the mass percent of Fluohydric acid. could be arranged to 0.1wt% to 2wt%, dioxygen
The mass percent of water could be arranged to 0.1wt% to 2wt%, and the mass percent of hydrochloric acid could be arranged to 0.5wt% extremely
5wt%.
Further, in the specific implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in order that cleaning performance is preferably, in the mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid, the mass percent of Fluohydric acid.
Could be arranged to 1wt% to 1.5wt%, the mass percent of hydrogen peroxide could be arranged to 1wt% to 1.5wt%, the matter of hydrochloric acid
Amount percentage ratio could be arranged to 1.5wt% to 3wt%.
Further, in the specific implementation, in the cleaning side of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention
In method, in order that cleaning performance is more preferably, in the mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid, the mass percent of Fluohydric acid.
Could be arranged to 1wt%, now the mass percent of hydrogen peroxide could be arranged to 1wt%, the mass percent of hydrochloric acid can set
It is set to 3wt%；Or, in the mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid, the mass percent of Fluohydric acid. it can also be provided that
0.1wt%, now the mass percent of hydrogen peroxide could be arranged to 0.1wt%, the mass percent of hydrochloric acid could be arranged to
0.5wt%；Or, the mass percent of Fluohydric acid. is it can also be provided that 2wt%, now the mass percent of hydrogen peroxide can be arranged
For 2wt%, the mass percent of hydrochloric acid could be arranged to 5wt%.
Show through result of the test, the mass percent increase of hydrochloric acid is conducive to the enhancing of complexing, but the quality of hydrochloric acid
Percentage ratio crosses conference makes the etching effect of Fluohydric acid. die down, so no more than 5wt%, the mass percent of hydrochloric acid is 2wt%
When, the coupling of Fluohydric acid., hydrogen peroxide and hydrochloric acid is optimum, can play more preferable cleaning performance.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, the sun
0.5min can be could be arranged to extremely by immersion Preset Time in the mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid for the cell silicon chip
The reasons why 10min, so setting is to be less than the time 30 seconds to cause oxide layer etching thorough, overlong time (more than 10min)
Silicon chip of solar cell surface roughness can be made to increase, be unfavorable for the passivation on surface.Further, in order to obtain optimal cleaning
Effect, immersion Preset Time in the mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid for the silicon chip of solar cell could be arranged to
2min to 5min.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, such as Fig. 3
Shown, step S101 carries out prerinse and makes silicon chip of solar cell surface produce oxidation to silicon chip of solar cell, specifically may be used
With in the following way：
S301, silicon chip of solar cell is put in ammonia and the mixed solution of hydrogen peroxide soak Preset Time after take out,
And deionized water is rinsed to silicon chip of solar cell；In this step, in the mixed solution of ammonia and hydrogen peroxide, ammonia
The mass percent of water could be arranged to 29wt%, and the mass percent of hydrogen peroxide could be arranged to 30wt%；
S302, the silicon chip of solar cell completing above-mentioned steps is put into soak in hydrochloric acid and the mixed solution of hydrogen peroxide pre-
If the time makes silicon chip of solar cell surface take out after producing oxidation, and deionized water is rushed to silicon chip of solar cell
Wash；In this step, in the mixed solution of hydrochloric acid and hydrogen peroxide, the mass percent of hydrochloric acid could be arranged to 37wt%, double
The mass percent of oxygen water could be arranged to 30wt%.
It should be noted that putting into silicon chip of solar cell in ammonia and the mixed solution of hydrogen peroxide, the sun can be removed
The cleaning of energy cell silicon chip surface impurity, can remove Organic substance, granule and the metallic element on silicon chip of solar cell surface etc.；
Silicon chip of solar cell is put in hydrochloric acid and the mixed solution of hydrogen peroxide and can silicon chip of solar cell be aoxidized and network
Conjunction is processed, and then can remove the metallic atom on silicon chip of solar cell surface.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, such as Fig. 4
Shown, in order that silicon chip of solar cell reduces light reflection to greatest extent, improve short circuit current (Isc), increase PN junction area,
Final raising photoelectric transformation efficiency, carries out prerinse in execution step S101 to silicon chip of solar cell and makes solaode silicon
Before piece surface produces oxidation, following steps can also be specifically included：
S401, silicon chip of solar cell is carried out damage layer and making herbs into wool and process.
In the specific implementation, in the cleaning method of above-mentioned silicon chip of solar cell provided in an embodiment of the present invention, such as Fig. 5
Shown, step S401 silicon chip of solar cell is carried out damage layer and making herbs into wool is processed, specifically can be in the following way：
S501, silicon chip of solar cell is put into soak in sodium hydroxide solution and takes out after Preset Time, and use deionization
Water is rinsed to silicon chip of solar cell；In this step, in sodium hydroxide solution, the mass percent of sodium hydroxide can
To be set to 10wt% to 30wt%；
S502, the silicon chip of solar cell completing above-mentioned steps is put into the mixed solution of sodium hydroxide and flocking additive
In, take out after Preset Time, and deionized water is rinsed to silicon chip of solar cell；In this step, in hydroxide
In the mixed solution of sodium and flocking additive, the mass percent of sodium hydroxide could be arranged to 5wt%, the body of flocking additive
Long-pending percentage ratio could be arranged to 0.3vol%.
Describe above-mentioned silicon chip of solar cell provided in an embodiment of the present invention with two specific examples in detail below
Cleaning method.
Example one：The comprising the following steps that of the cleaning method of silicon chip of solar cell：
Step 1, silicon chip of solar cell is put in sodium hydroxide (NaOH) solution soak Preset Time after take out, be used in combination
Deionized water (DI water) is rinsed to silicon chip of solar cell, removes the damage layer on silicon chip of solar cell surface；
In the specific implementation, first, silicon chip of solar cell being put into mass percent is 10wt%'s to 30wt%
In NaOH solution, the temperature of this NaOH solution is preferably set to 75 DEG C to 85 DEG C, and silicon chip of solar cell is put into NaOH solution
Take out after middle 2min to 10min, with DI water, silicon chip of solar cell is rinsed after taking-up, washing time is preferably
5min to 10min.The type of the silicon chip of solar cell that the specific embodiment of the invention selects is N-type, silicon chip of solar cell
Thickness is 195 μm, and the resistivity of silicon chip of solar cell is 1 Ω cm to 5 Ω cm.
Step 2, the silicon chip of solar cell completing above-mentioned steps is put in NaOH and the mixed solution of flocking additive,
Take out after Preset Time, and with DI water, silicon chip of solar cell is rinsed；
In the specific implementation, silicon chip of solar cell is put into the NaOH that mass percent is 5wt% and percent by volume
In the mixed solution of the flocking additive for 0.3vol%, the temperature of this mixed solution is preferably set to 85 DEG C, by solar-electricity
Pond silicon chip takes out after putting into 20min in this mixed solution, with DI water, silicon chip of solar cell is rinsed after taking-up, punching
Time of washing is preferably 5min to 10min.
Step 3, the silicon chip of solar cell completing above-mentioned steps is put into ammonia (NH3·H2O), hydrogen peroxide (H2O2) and
Water (H2O take out after soaking Preset Time in mixed solution), and with DI water, silicon chip of solar cell is rinsed；
In the specific implementation, silicon chip of solar cell being put into proportioning is 1：1：5 NH3·H2O、H2O2And H2The mixing of O
In solution, wherein NH3·H2The mass percent of O is 29wt%, H2O2Mass percent be 30wt%, this mixed solution
Temperature is preferably set to 75 DEG C, silicon chip of solar cell is put into soak in this mixed solution and takes out after 15min, spend after taking-up
DI water is rinsed to silicon chip of solar cell, and washing time is preferably 5min to 10min.
Step 4, the silicon chip of solar cell completing above-mentioned steps is put into hydrochloric acid (HCl), H2O2And H2The mixed solution of O
Middle immersion Preset Time makes silicon chip of solar cell surface take out after producing oxidation, and with DI water to solaode silicon
Piece is rinsed；
In the specific implementation, silicon chip of solar cell being put into proportioning is 1：1：6 HCl, H2O2And H2The mixed solution of O
In, wherein the mass percent of HCl is 37wt%, H2O2Mass percent be 30wt%, the temperature of this mixed solution preferably sets
It is set to 75 DEG C, silicon chip of solar cell is put into soak in this mixed solution and takes out after 15min, use DI water after taking-up to too
Sun can cell silicon chip be rinsed, and washing time is preferably 5min to 10min.
Step 5, the silicon chip of solar cell completing above-mentioned steps is put into Fluohydric acid. (HF), H2O2Mixed solution with HCl
Middle immersion Preset Time takes out after performing etching cleaning, and with DI water, silicon chip of solar cell is rinsed；
In the specific implementation, two kinds of conditions are selected as a comparison, condition one：Silicon chip of solar cell is put into percent mass
It is the H of 0.1wt% than the HF for 0.1wt%, mass percent2O2Mixed solution with the HCl for 0.5wt% for the mass percent
In perform etching cleaning, scavenging period is preferably 2min to 5min, the silicon chip of solar cell after cleaning is taken out, and uses DI
Water is rinsed to silicon chip of solar cell, and washing time is preferably 2min to 5min；Condition two：Above-mentioned steps will be completed
Silicon chip of solar cell put into soak Preset Time in the solution only with HF and perform etching and take out after cleaning, and use DI
Water is rinsed to silicon chip of solar cell, will silicon chip of solar cell put into mass percent be 0.1wt% HF molten
Perform etching cleaning in liquid, scavenging period is preferably 2min to 5min, the silicon chip of solar cell after cleaning is taken out, and uses DI
Water is rinsed to silicon chip of solar cell, and washing time is preferably 2min to 5min.
So far, through example one provide above-mentioned steps 1 to step 5 washed out provided in an embodiment of the present invention above-mentioned too
Sun can cell silicon chip.
Example two：The comprising the following steps that of the cleaning method of silicon chip of solar cell：
Step 6, silicon chip of solar cell is put in sodium hydroxide (NaOH) solution soak Preset Time after take out, be used in combination
Deionized water (DI water) is rinsed to silicon chip of solar cell, removes the damage layer on silicon chip of solar cell surface；
In the specific implementation, first, silicon chip of solar cell being put into mass percent is 10wt%'s to 30wt%
In NaOH solution, the temperature of this NaOH solution is preferably set to 75 DEG C to 85 DEG C, and silicon chip of solar cell is put into NaOH solution
Take out after middle 2min to 10min, with DI water, silicon chip of solar cell is rinsed after taking-up, washing time is preferably
5min to 10min.The type of the silicon chip of solar cell that the specific embodiment of the invention selects is N-type, silicon chip of solar cell
Thickness is 195 μm, and the resistivity of silicon chip of solar cell is 1 Ω cm to 5 Ω cm.
Step 7, the silicon chip of solar cell completing above-mentioned steps is put in NaOH and the mixed solution of flocking additive,
Take out after Preset Time, and with DI water, silicon chip of solar cell is rinsed；
In the specific implementation, silicon chip of solar cell is put into the NaOH that mass percent is 5wt% and percent by volume
In the mixed solution of the flocking additive for 0.3vol%, the temperature of this mixed solution is preferably set to 85 DEG C, by solar-electricity
Pond silicon chip takes out after putting into 20min in this mixed solution, with DI water, silicon chip of solar cell is rinsed after taking-up, punching
Time of washing is preferably 5min to 10min.
Step 8, the silicon chip of solar cell completing above-mentioned steps is put into ammonia (NH3·H2O), hydrogen peroxide (H2O2) and
Water (H2O take out after soaking Preset Time in mixed solution), and with DI water, silicon chip of solar cell is rinsed；
In the specific implementation, silicon chip of solar cell being put into proportioning is 1：1：5 NH3·H2O、H2O2And H2The mixing of O
In solution, wherein NH3·H2The mass percent of O is 29wt%, H2O2Mass percent be 30wt%, this mixed solution
Temperature is preferably set to 75 DEG C, silicon chip of solar cell is put into soak in this mixed solution and takes out after 15min, spend after taking-up
DI water is rinsed to silicon chip of solar cell, and washing time is preferably 5min to 10min.
Step 9, the silicon chip of solar cell completing above-mentioned steps is put into hydrochloric acid (HCl), H2O2And H2The mixed solution of O
Middle immersion Preset Time makes silicon chip of solar cell surface take out after producing oxidation, and with DI water to solaode silicon
Piece is rinsed；
In the specific implementation, silicon chip of solar cell being put into proportioning is 1：1：6 HCl, H2O2And H2The mixed solution of O
In, wherein the mass percent of HCl is 37wt%, H2O2Mass percent be 30wt%, the temperature of this mixed solution preferably sets
It is set to 75 DEG C, silicon chip of solar cell is put into soak in this mixed solution and takes out after 15min, use DI water after taking-up to too
Sun can cell silicon chip be rinsed, and washing time is preferably 5min to 10min.
Step 10, the silicon chip of solar cell completing above-mentioned steps is put into Fluohydric acid. (HF), H2O2Molten with the mixing of HCl
Soak in liquid after Preset Time performs etching cleaning and take out, and with DI water, silicon chip of solar cell is rinsed；
In the specific implementation, two kinds of conditions are selected as a comparison, condition three：Silicon chip of solar cell is put into percent mass
It is the H of 1.5wt% than the HF for 1.5wt%, mass percent2O2In the mixed solution of the HCl for 3wt% for the mass percent
Perform etching cleaning, scavenging period is preferably 2min to 5min, the silicon chip of solar cell after cleaning is taken out, and uses DI
Water is rinsed to silicon chip of solar cell, and washing time is preferably 2min to 5min；Condition four：Above-mentioned steps will be completed
Silicon chip of solar cell put into soak Preset Time in the solution only with HF and perform etching and take out after cleaning, and use DI
Water is rinsed to silicon chip of solar cell, will silicon chip of solar cell put into mass percent be 0.5wt% HF molten
Perform etching cleaning in liquid, scavenging period is preferably 2min to 5min, the silicon chip of solar cell after cleaning is taken out, and uses DI
Water is rinsed to silicon chip of solar cell, and washing time is preferably 2min to 5min.
So far, above-mentioned steps 6 to the step 10 providing through example two has washed out provided in an embodiment of the present invention above-mentioned
Silicon chip of solar cell.
Further, in order to compare the cleaning performance of example one and example two, example one and example two are washed out
It is different that above-mentioned silicon chip of solar cell using plasma enhancing chemical vapour deposition technique provided in an embodiment of the present invention produces silicon
Matter joint solar cell, comprises the following steps that：
Step 11, respectively step 5 and step 10 are cleaned after silicon chip of solar cell put in drier dry；
Step 12, by dry after silicon chip of solar cell put in PECVD device, silicon chip of solar cell two sides sink
Long-pending amorphous silicon intrinsic layer and doped layer, form ip/c-Si/in structure；Device temperature can be arranged on 150 DEG C；
Step 13, utilize PVD equipment, the ip/c-Si/in structure two sides being formed in above-mentioned steps respectively deposits 100nm thickness
TCO film layer, formed battery；
Step 14, the battery two sides screen printing electrode being formed in above-mentioned steps with silver paste；
Step 15, the battery making above-mentioned steps are put in annealing furnace, are made annealing treatment under air atmosphere, annealing
Temperature could be arranged to 200 DEG C, and annealing time could be arranged to 30min；
Step 16, the test of minority carrier life time, and the test of battery efficiency are carried out to the battery after annealing.
After tested, the minority carrier life time of the battery that the condition one providing in embodiment one is produced is in 4000-5000 μ s, photoelectricity
Conversion efficiency is 21.5%；And the minority carrier life time of the battery that condition two is produced is in 2500-3500 μ s, photoelectric transformation efficiency is
21.2%；It can be seen that the minority carrier life time of battery that the embodiment of the present invention is produced using condition one is extended, opto-electronic conversion is imitated
Rate is improved.
The minority carrier life time of the battery that the condition three providing in embodiment two is produced is imitated in 4000-5000 μ s, opto-electronic conversion
Rate is 21.6%；And the minority carrier life time of the battery that condition two is produced is in 2500-3500 μ s, photoelectric transformation efficiency is 21.3%；
It can be seen that the minority carrier life time of battery that the embodiment of the present invention is produced using condition three is extended, photoelectric transformation efficiency obtains
Improve.
Through comparing, the photoelectric transformation efficiency highest of the battery that the embodiment of the present invention is produced using condition three.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of preparation method of solaode, including adopting
With above-mentioned cleaning method.The enforcement of the preparation method of this solaode may refer to the cleaning of above-mentioned silicon chip of solar cell
The embodiment of method, repeats no more in place of repetition.
A kind of cleaning method of silicon chip of solar cell provided in an embodiment of the present invention, the preparation method of solaode,
This cleaning method includes：Silicon chip of solar cell is carried out with prerinse makes silicon chip of solar cell surface produce oxidation；Using
The mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid performs etching cleaning to the silicon chip of solar cell after prerinse.This
Using Fluohydric acid. and hydrogen peroxide, the micro etch of silicon chip of solar cell is being acted in the above-mentioned cleaning method that bright embodiment provides
On the basis of, add the complexing to metal ion for the hydrochloric acid again, the metal ion of residual can be dissolved, it is right to strengthen further
The cleaning performance of silicon chip of solar cell surface metal contaminants, so reduce silicon chip of solar cell surface metal ion with
Being combined of few son in silicon chip of solar cell, improves the life-span of few son in solar energy silicon chip of solar cell, thus improving too
The efficiency of sun energy battery.
Obviously, those skilled in the art can carry out the various changes and modification essence without deviating from the present invention to the present invention
God and scope.So, if these modifications of the present invention and modification belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprise these changes and modification.
Claims (10)
1. a kind of cleaning method of silicon chip of solar cell is it is characterised in that include：
Silicon chip of solar cell is carried out with prerinse makes described silicon chip of solar cell surface produce oxidation；
Mixed solution using Fluohydric acid., hydrogen peroxide and hydrochloric acid is carved to the silicon chip of solar cell after described prerinse
Erosion cleaning.
2. cleaning method as claimed in claim 1 is it is characterised in that adopt the mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid
Cleaning is performed etching to the silicon chip of solar cell after described prerinse, specifically includes：
Silicon chip of solar cell after described prerinse is put in the mixed solution of Fluohydric acid., hydrogen peroxide and hydrochloric acid and soak
Preset Time takes out after performing etching cleaning, and deionized water is rinsed to described silicon chip of solar cell.
3. cleaning method as claimed in claim 2 is it is characterised in that molten in the mixing of described Fluohydric acid., hydrogen peroxide and hydrochloric acid
In liquid, the mass percent of described Fluohydric acid. is identical with the mass percent of hydrogen peroxide.
4. cleaning method as claimed in claim 3 is it is characterised in that molten in the mixing of described Fluohydric acid., hydrogen peroxide and hydrochloric acid
In liquid, the mass percent of described Fluohydric acid. is 0.1wt% to 2wt%, and the mass percent of described hydrogen peroxide is for 0.1wt% extremely
2wt%, the mass percent of described hydrochloric acid is 0.5wt% to 5wt%.
5. cleaning method as claimed in claim 4 is it is characterised in that molten in the mixing of described Fluohydric acid., hydrogen peroxide and hydrochloric acid
In liquid, the mass percent of described Fluohydric acid. is 1wt% to 1.5wt%, and the mass percent of described hydrogen peroxide is for 1wt% extremely
1.5wt%, the mass percent of described hydrochloric acid is 1.5wt% to 3wt%.
6. cleaning method as claimed in claim 4 is it is characterised in that molten in the mixing of described Fluohydric acid., hydrogen peroxide and hydrochloric acid
In liquid, the mass percent of described Fluohydric acid. is 0.1wt%, and the mass percent of described hydrogen peroxide is 0.1wt%, described hydrochloric acid
Mass percent be 0.5wt%；Or,
The mass percent of described Fluohydric acid. is 2wt%, and the mass percent of described hydrogen peroxide is 2wt%, the matter of described hydrochloric acid
Amount percentage ratio is 5wt%；Or,
The mass percent of described Fluohydric acid. is 1wt%, and the mass percent of described hydrogen peroxide is 1wt%, the matter of described hydrochloric acid
Amount percentage ratio is 3wt%.
7. cleaning method as claimed in claim 2 is it is characterised in that described silicon chip of solar cell is in described Fluohydric acid., double
Immersion Preset Time in the mixed solution of oxygen water and hydrochloric acid is 0.5min to 10min.
8. cleaning method as claimed in claim 1 it is characterised in that silicon chip of solar cell is carried out prerinse make described
Silicon chip of solar cell surface produces oxidation, specifically includes：
Silicon chip of solar cell is put into soak in ammonia and the mixed solution of hydrogen peroxide and takes out after Preset Time, and use deionization
Water is rinsed to described silicon chip of solar cell；
The silicon chip of solar cell completing above-mentioned steps is put into immersion Preset Time in hydrochloric acid and the mixed solution of hydrogen peroxide to be made
Obtain after described silicon chip of solar cell surface produces oxidation and take out, and deionized water is rushed to described silicon chip of solar cell
Wash；
Before prerinse is carried out to silicon chip of solar cell, also include：
By silicon chip of solar cell put in sodium hydroxide solution soak Preset Time after take out, and deionized water to described too
Sun can cell silicon chip be rinsed；
The silicon chip of solar cell completing above-mentioned steps is put in sodium hydroxide and the mixed solution of flocking additive, default
Take out after time, and deionized water is rinsed to described silicon chip of solar cell.
9. cleaning method as claimed in claim 8 is it is characterised in that in the mixed solution of described ammonia and hydrogen peroxide, institute
The mass percent stating ammonia is 29wt%, and the mass percent of described hydrogen peroxide is 30wt%；
In the mixed solution of described hydrochloric acid and hydrogen peroxide, the mass percent of described hydrochloric acid is 37wt%, described hydrogen peroxide
Mass percent is 30wt%；
In described sodium hydroxide solution, the mass percent of described sodium hydroxide is 10wt% to 30wt%；
In the mixed solution of described sodium hydroxide and flocking additive, the mass percent of described sodium hydroxide is 5wt%, institute
The percent by volume stating flocking additive is 0.3vol%.
10. a kind of preparation method of solaode is it is characterised in that include the cleaning as described in any one of claim 1-9
Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611025279.4A CN106409977B (en) | 2016-11-21 | 2016-11-21 | A kind of cleaning method of silicon chip of solar cell, the preparation method of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611025279.4A CN106409977B (en) | 2016-11-21 | 2016-11-21 | A kind of cleaning method of silicon chip of solar cell, the preparation method of solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106409977A true CN106409977A (en) | 2017-02-15 |
| CN106409977B CN106409977B (en) | 2018-02-16 |
Family
ID=58069106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611025279.4A Active CN106409977B (en) | 2016-11-21 | 2016-11-21 | A kind of cleaning method of silicon chip of solar cell, the preparation method of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106409977B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107154449A (en) * | 2017-05-19 | 2017-09-12 | 常州亿晶光电科技有限公司 | It is a kind of to reduce the process of polycrystalline cell piece electric leakage |
| CN108384667A (en) * | 2018-02-28 | 2018-08-10 | 浙江晶科能源有限公司 | A kind of silicon chip cleaning liquid and silicon wafer cleaning method |
| CN108766869A (en) * | 2018-05-30 | 2018-11-06 | 苏州日弈新电子科技有限公司 | A kind of silicon chip of solar cell slot type cleaning method |
| CN108831824A (en) * | 2018-06-26 | 2018-11-16 | 英利能源（中国）有限公司 | The cleaning method of solar battery substrate and the preparation method of solar battery |
| CN110137302A (en) * | 2018-02-08 | 2019-08-16 | 国家电投集团科学技术研究院有限公司 | The cleaning of silicon heterojunction solar battery crystalline silicon substrate and etching method and silicon heterojunction solar battery |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03228327A (en) * | 1990-02-02 | 1991-10-09 | Nec Corp | Cleaning method of semiconductor wafer |
| US6309467B1 (en) * | 1997-09-19 | 2001-10-30 | Wacker-Chemie Gmbh | Method for producing a semiconductor material |
| CN102728573A (en) * | 2012-06-19 | 2012-10-17 | 天威新能源控股有限公司 | Process for cleaning damage layer of reactive ion etching (RIE) flocking surface of crystalline silicon |
| CN103762155A (en) * | 2013-12-23 | 2014-04-30 | 上海申和热磁电子有限公司 | Silicon wafer cleaning process |
| CN104752551A (en) * | 2013-12-25 | 2015-07-01 | 新奥光伏能源有限公司 | Cleaning method of solar silicon wafer |
-
2016
- 2016-11-21 CN CN201611025279.4A patent/CN106409977B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03228327A (en) * | 1990-02-02 | 1991-10-09 | Nec Corp | Cleaning method of semiconductor wafer |
| US6309467B1 (en) * | 1997-09-19 | 2001-10-30 | Wacker-Chemie Gmbh | Method for producing a semiconductor material |
| CN102728573A (en) * | 2012-06-19 | 2012-10-17 | 天威新能源控股有限公司 | Process for cleaning damage layer of reactive ion etching (RIE) flocking surface of crystalline silicon |
| CN103762155A (en) * | 2013-12-23 | 2014-04-30 | 上海申和热磁电子有限公司 | Silicon wafer cleaning process |
| CN104752551A (en) * | 2013-12-25 | 2015-07-01 | 新奥光伏能源有限公司 | Cleaning method of solar silicon wafer |
Non-Patent Citations (1)
| Title |
|---|
| 康自卫: "《硅片加工技术》", 30 September 2010 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107154449A (en) * | 2017-05-19 | 2017-09-12 | 常州亿晶光电科技有限公司 | It is a kind of to reduce the process of polycrystalline cell piece electric leakage |
| CN110137302A (en) * | 2018-02-08 | 2019-08-16 | 国家电投集团科学技术研究院有限公司 | The cleaning of silicon heterojunction solar battery crystalline silicon substrate and etching method and silicon heterojunction solar battery |
| CN108384667A (en) * | 2018-02-28 | 2018-08-10 | 浙江晶科能源有限公司 | A kind of silicon chip cleaning liquid and silicon wafer cleaning method |
| CN108766869A (en) * | 2018-05-30 | 2018-11-06 | 苏州日弈新电子科技有限公司 | A kind of silicon chip of solar cell slot type cleaning method |
| CN108831824A (en) * | 2018-06-26 | 2018-11-16 | 英利能源（中国）有限公司 | The cleaning method of solar battery substrate and the preparation method of solar battery |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106409977B (en) | 2018-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106409977B (en) | A kind of cleaning method of silicon chip of solar cell, the preparation method of solar cell | |
| CN109216509A (en) | A kind of interdigitation back contacts heterojunction solar battery preparation method | |
| JP2011503910A (en) | Solar cell contact formation process using patterned etchant | |
| TW201246320A (en) | Method for cleaning silicon substrate, and method for producing solar cell | |
| JP6815532B2 (en) | PERC solar cell capable of improving photoelectric conversion efficiency and its manufacturing method | |
| CN107658367A (en) | A kind of Wet chemical processing method of hetero-junction solar cell | |
| CN112542531A (en) | Silicon wafer pretreatment and heterojunction battery preparation method | |
| CN116936687B (en) | Combined passivation back contact battery and post-texturing method for removing undercut residual mask layer | |
| CN106711280B (en) | A kind of production method of N-type double-side cell | |
| CN105304765B (en) | A kind of silicon heterogenous solar cell and preparation method thereof | |
| CN112687761A (en) | Multilayer passivation method for surface of solar cell | |
| CN110943144A (en) | Texturing and cleaning method for heterojunction battery | |
| CN106972079A (en) | The cleaning method at the PERC silicon chip of solar cell back side | |
| WO2023221369A1 (en) | Heterojunction battery and preparation method therefor | |
| CN109860324A (en) | The back side is passivated contact solar cell and preparation method thereof entirely | |
| KR101212896B1 (en) | Texturing of multicrystalline silicon for solar cell using an acidic solution | |
| CN116741877A (en) | TBC battery preparation method and TBC battery | |
| CN111446331A (en) | Method for removing plating and method for preparing passivated contact solar cell | |
| JP2014082285A (en) | Solar cell, method for manufacturing the same, and solar cell module | |
| TW201036188A (en) | Method of fabricating solar cells | |
| CN104112795B (en) | A kind of production method of silicon heterogenous solar cell | |
| CN112687762A (en) | Solar cell surface passivation method | |
| CN113921649A (en) | Preparation method of silicon-based heterojunction solar cell | |
| CN101447530B (en) | Process for cleaning sizing agent used for etching silicon dioxide mask | |
| CN102489468B (en) | Method for cleaning silicon nitride on surface layer of graphite base plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |