CN201601137U - Novel heating temperature control system of solar energy silicon wafer cleaning wool making - Google Patents
Novel heating temperature control system of solar energy silicon wafer cleaning wool making Download PDFInfo
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- CN201601137U CN201601137U CN2009200732856U CN200920073285U CN201601137U CN 201601137 U CN201601137 U CN 201601137U CN 2009200732856 U CN2009200732856 U CN 2009200732856U CN 200920073285 U CN200920073285 U CN 200920073285U CN 201601137 U CN201601137 U CN 201601137U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The utility model aims to provide a novel heating temperature control system of solar energy silicon wafer cleaning wool making, and belongs to the technical field of solar energy silicon wafer surface micro-processing. The system comprises a heating groove, a heating tube and a temperature controller. The heating groove is used for achieving the purpose of solar energy silicon wafer wool making; the heating tube arranged in the heating groove is used for heating; and the temperature controller communicated with the heating tube is used for realizing a temperature control function by adjusting current flowing into the heating tube. The system adopts the novel heating temperature control system, can effectively control the process temperature accuracy of the heating groove and steadiness in the process of solar energy silicon wafer wool making, and effectively improve the working capacity of devices; each device can process more than 2400 silicon wafers per hour; and simultaneously ensure the manufacturing quality of single-crystal silicon wool surfaces. The system has simple hardware modification structure, and enables production process to be improved on the basis of not increasing cost.
Description
Technical field
The utility model belongs to microprocessing field, solar silicon wafers surface.
Background technology
The silicon chip that enters factory is obtained by the cutting silicon ingot by silicon chip manufacturer, so can there be certain damage (affected layer) in silicon chip surface, in addition, can be subjected to pollution in various degree in the silicon chip working process unavoidably.So before entering formal production, we must remove the affected layer and the dirt of silicon chip surface earlier.Here our method by chemical reaction is peeled off one deck silicon of silicon chip surface, thereby is reached the purpose of removal affected layer with 20% sodium hydroxide solution corrosion of silicon surface.And then make matte with rarer sodium hydroxide solution, its principle be NaOH to silicon chip surface corrosion rate difference, thereby cause silicon chip surface to form rough state, Here it is so-called matte.The effect of matte is to make light at silicon chip surface repeatedly reflection take place, thereby increases the probability that light is injected silicon chip, and silicon chip obtains more energy accordingly.Then, we adopt the way of pickling (hydrochloric acid) to remove the dirt of silicon chip surface, use deionized water rinsing silicon chip, oven dry at last.
Because can produce a large amount of heats behind the caustic corrosion silicon chip, the temperature of Bian Huaing is unfavorable for the surface wool manufacturing of silicon chip rapidly, temperature control just becomes key technology in the silicon series manufacture of solar cells process.Through repeatedly experiment repeatedly, final result shows as NaOH and is heated to 85 ℃, and concentration is to go that injuring speed is the fastest, effect is best at 25% o'clock; Technological requirement NaSiO: NaOH is between 1: 3.5 to 1: 3, and NaOH: IPA is about 1: 6.The NaOH concentration requirement is adjusted between 2%～4%.The optimum working temperature of making herbs into wool is at 83 ℃ ± 1 ℃.Temperature is too low all can not make matte with the IPA scale, and silicon chip runs out of before matte forms in other words.IPA can not form matte too much, and it can not work to regulate the crystal orientation reaction speed.
The utility model content
The purpose of this utility model provides novel heating temperature-controlling system in a kind of solar silicon wafers cleaning and texturing, is used for providing a kind of novel heating temperature-controlling system in solar silicon wafers cleaning and texturing process.
Novel heating temperature-controlling system is characterized in that in a kind of solar silicon wafers cleaning and texturing, and this system includes following part:
Heating tank, it is in order to realize the cell body of solar silicon wafers making herbs into wool purpose;
Heating tube, it is an electroheating type tubulose heating arrangement, is arranged in the aforesaid heating tank;
Thermostat, it is connected with aforesaid heating tube, is the temperature controller of realizing temperature controlling function by the size of current of heating tube by regulating, is provided with temperature sensor simultaneously, with the select target temperature value.
Further, novel heating temperature-controlling system also has following technical characterictic in described this solar silicon wafers cleaning and texturing:
Described heating tank is selected the overflow launder structure as a kind of typical embodiment.
Described heating tank, it also is provided with refrigerating system.
Described heating tank also is provided with corrugated pipe coil around it.
Described heating tank, it also is provided with dosing, the fluid infusion interface of just regulating in order to liquid level.
Described heating tube, it is and some heating tubes, the common employing intersected the annular tiling and is evenly distributed in the heating tank below.
Described thermostat, it is to adopt controllable silicon heating technique, oil bath heating and dynamic balance control technique principle to realize temperature control.
Advantage of the present utility model is:
Novel heating temperature-controlling system in a kind of solar silicon wafers cleaning and texturing described in the utility model, relate in the solar silicon wafers production process, silicon chip is carried out surface treatment absorb the solar light area to improve battery sheet efficient, optimize the scheme of silicon chip making herbs into wool technology to increase it.This system has adopted novel heating temperature-controlling system, can be controlled in the process of solar silicon wafers making herbs into wool the technological temperature precision of heating tank, and stability effectively.And improved the ability to work of equipment effectively, separate unit per hour can be handled 2400 more than the silicon chip, has also guaranteed the quality that monocrystalline silicon suede is made simultaneously.This system hardware reconstruction structure is simple, on the basis that does not increase cost, makes that production technology obtains to promote.
Description of drawings
Fig. 1 is the structural representation of novel heating temperature-controlling system in the solar silicon wafers cleaning and texturing.
Embodiment
Novel heating temperature-controlling system 100 in this solar silicon wafers cleaning and texturing as previously mentioned is characterized in that this system includes following part:
Further, novel heating temperature-controlling system also has following technical characterictic in described this solar silicon wafers cleaning and texturing:
Described heating tank 110 is selected the overflow launder structure as a kind of typical embodiment.
Described heating tank 110, it also is provided with refrigerating system.
Described heating tank 110 also is provided with corrugated pipe coil around it.
Described heating tank 110, it also is provided with dosing, the fluid infusion interface of just regulating in order to liquid level.
Described heating tube 120, it is and some heating tubes, the common employing intersected the annular tiling and is evenly distributed in heating tank 110 belows.
Described thermostat 130, it is to adopt controllable silicon heating technique, oil bath heating and dynamic balance control technique principle to realize temperature control.
The explanation of Fig. 1:
Shown in ginseng Fig. 1: showed the primary structure of novel heating temperature-controlling system 100 in this solar silicon wafers cleaning and texturing among the figure, heating tube 120 adopts and intersects annular and be tiled in the below of heating tank 110, with tile any one corner of bottom land of heating region; The purpose of even heating can be reached on the one hand, on the other hand, the shortcoming at the bottom of plastics heater useful life can be overcome.Thermostat 130 is connected with heating tube 120, adopts the controllable silicon technology, and the size of current that flows to heating tube 120 by adjusting realizes temperature controlling function.
On heating tank 110 structures, adopt the overflow launder structure, the waste liquid that overflows imports the waste discharge pipeline: for preventing to react mist transition volatilization, open lid about heating tank 110 cell bodies are provided with, plastics cylinder control folding.On the cylinder extension bar, be provided with protective sleeve, prevent to react droplet and drop on above the extension bar; Consider the cleaning requirement of compatible monocrystalline and polysilicon chip, be provided with independent heating and refrigerating system in the heating tank 110; Temperature control (comprising the acid-proof thermocouple) is established in heating tank 110 cell bodies bottom, guarantees to satisfy fully the working temperature needs, shortens the heating-up time to greatest extent to enhance productivity simultaneously; The design temperature of thermostat 130 can be regulated according to technological requirement, and our equipment adopts oil bath heating and dynamic balance control technique simultaneously, and temperature-controlled precision is ± 0.5 ℃; Also be provided with corrugated pipe coil around in the heating tank 110, can feed cooling water to solution refrigeration in the groove, cooling water is provided by the external thermostatted water circulatory system; Etching time can be set in touch screen interface, adjust; Be provided with dosing, fluid infusion interface in the heating tank 110, liquid level height scalable, the volume of DI water capacity and NaOH when requirement can be controlled dosing is on the one hand gone back may command fluid infusion volume on the other hand.
More than be to description of the present utility model and non-limiting, based on other execution mode of the utility model thought, all among protection range of the present utility model.
Claims (7)
1. novel heating temperature-controlling system in the solar silicon wafers cleaning and texturing is characterized in that this system includes following part:
Heating tank, it is in order to realize the cell body of solar silicon wafers making herbs into wool purpose;
Heating tube, it is an electroheating type tubulose heating arrangement, is arranged in the aforesaid heating tank;
Thermostat, it is connected with aforesaid heating tube, is the temperature controller that is used for controlling the heating tube temperature.
2. novel heating temperature-controlling system in the solar silicon wafers cleaning and texturing according to claim 1 is characterized in that: described heating tank, select the overflow launder structure.
3. novel heating temperature-controlling system in the solar silicon wafers cleaning and texturing according to claim 1 is characterized in that: described heating tank, it also is provided with refrigerating system.
4. novel heating temperature-controlling system in the solar silicon wafers cleaning and texturing according to claim 1 is characterized in that: described heating tank also is provided with corrugated pipe coil around it.
5. novel heating temperature-controlling system in the solar silicon wafers cleaning and texturing according to claim 1 is characterized in that: described heating tank, it also is provided with dosing, the fluid infusion interface of just regulating in order to liquid level.
6. novel heating temperature-controlling system in the solar silicon wafers cleaning and texturing according to claim 1 is characterized in that: described heating tube, and it is and some heating tubes, the common employing intersected the annular tiling and is evenly distributed in the heating tank below.
7. novel heating temperature-controlling system in the solar silicon wafers cleaning and texturing according to claim 1 is characterized in that: on described thermostat, also be provided with the temperature sensor in order to the select target temperature value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200732856U CN201601137U (en) | 2009-06-02 | 2009-06-02 | Novel heating temperature control system of solar energy silicon wafer cleaning wool making |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200732856U CN201601137U (en) | 2009-06-02 | 2009-06-02 | Novel heating temperature control system of solar energy silicon wafer cleaning wool making |
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| Publication Number | Publication Date |
|---|---|
| CN201601137U true CN201601137U (en) | 2010-10-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009200732856U Expired - Fee Related CN201601137U (en) | 2009-06-02 | 2009-06-02 | Novel heating temperature control system of solar energy silicon wafer cleaning wool making |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157620A (en) * | 2011-02-22 | 2011-08-17 | 常州亿晶光电科技有限公司 | Silicon wafer etching bath liquid isolation type uniform heating device |
| CN102157619A (en) * | 2011-02-22 | 2011-08-17 | 常州亿晶光电科技有限公司 | Device for uniformly heating flocking slot of silicon wafer |
| CN102242402A (en) * | 2011-07-11 | 2011-11-16 | 苏州赤诚洗净科技有限公司 | Texturing device for solar cell silicon wafer |
| CN102749942A (en) * | 2011-04-19 | 2012-10-24 | 中电电气(上海)太阳能科技有限公司 | Assembly line constant-temperature system for solar cell modules |
| CN102891208A (en) * | 2011-07-21 | 2013-01-23 | 浚鑫科技股份有限公司 | Solar cell texturing method |
| CN107988628A (en) * | 2017-11-27 | 2018-05-04 | 乐山新天源太阳能科技有限公司 | Silicon chip texture etching slot |
-
2009
- 2009-06-02 CN CN2009200732856U patent/CN201601137U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157620A (en) * | 2011-02-22 | 2011-08-17 | 常州亿晶光电科技有限公司 | Silicon wafer etching bath liquid isolation type uniform heating device |
| CN102157619A (en) * | 2011-02-22 | 2011-08-17 | 常州亿晶光电科技有限公司 | Device for uniformly heating flocking slot of silicon wafer |
| CN102749942A (en) * | 2011-04-19 | 2012-10-24 | 中电电气(上海)太阳能科技有限公司 | Assembly line constant-temperature system for solar cell modules |
| CN102749942B (en) * | 2011-04-19 | 2014-06-25 | 中电电气(上海)太阳能科技有限公司 | Assembly line constant-temperature system for solar cell modules |
| CN102242402A (en) * | 2011-07-11 | 2011-11-16 | 苏州赤诚洗净科技有限公司 | Texturing device for solar cell silicon wafer |
| CN102891208A (en) * | 2011-07-21 | 2013-01-23 | 浚鑫科技股份有限公司 | Solar cell texturing method |
| CN102891208B (en) * | 2011-07-21 | 2015-06-17 | 中建材浚鑫科技股份有限公司 | Solar cell texturing method |
| CN107988628A (en) * | 2017-11-27 | 2018-05-04 | 乐山新天源太阳能科技有限公司 | Silicon chip texture etching slot |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUIZHONG ELECTRONICS TECHNOLOGY DEVELOPME Free format text: FORMER OWNER: SHANGHAI SHENGWEI ELECTRONICS TECHNOLOGY DEVELOPMENT CO., LTD. Effective date: 20110318 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200433 ROOM 2311, ZHONGHUAN BUILDING, NO. 2, LANE 3856, ZHONGSHAN NORTH ROAD, SHANGHAI TO: 201203 NO. 399, KEYUAN ROAD, ZHANGJIANG HIGH TECHNOLOGY PARK, SHANGHAI |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20110318 Address after: Shanghai city 201203 Keyuan Road, Zhangjiang hi tech Park No. 399 Patentee after: Shanghai Hui Zhong Dsy technology Ltd Address before: 200433, room 2311, central building, No. 3856, Lane 2, Shanghai, Zhongshan North Road Patentee before: Shanghai Shengwei Electronic Technology Development Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101006 Termination date: 20140602 |