CN206022323U - A kind of etching apparatus after soi wafer chamfering - Google Patents
A kind of etching apparatus after soi wafer chamfering Download PDFInfo
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- CN206022323U CN206022323U CN201620958252.XU CN201620958252U CN206022323U CN 206022323 U CN206022323 U CN 206022323U CN 201620958252 U CN201620958252 U CN 201620958252U CN 206022323 U CN206022323 U CN 206022323U
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Abstract
The utility model discloses the etching apparatus after a kind of soi wafer chamfering, belongs to SOI manufacturing technology fields.The equipment includes TMAH etching tanks, pure water rinse bath, drying tank and mechanical hand；Mechanical hand is used for carrying the film magazine for placing silicon chip, and TMAH etching tanks corrode to silicon chip for taking up corrosive liquid；Silicon chip after corrosion terminates is cleaned by mechanical hand transfer to pure water rinse bath；Film magazine after cleaning equipped with silicon chip is put in drying tank, carries out the drying operation of silicon chip.The equipment monitors the temperature of solution in TMAH etching tanks by starting temp measuring system, and controlled by control system and adjust the temperature of solution in heating TMAH etching tanks, the self-loopa of TMAH solution is carried out simultaneously, enable the temperature precise control in chamfering corrosion process, meet the actual temperature and TMAH solution concentration requirement of wafer chamfering edge corrosion, it is ensured that prepare high-quality silicon chip.
Description
Technical field
This utility model is related to SOI manufacturing technology fields, and in particular to the etching apparatus after a kind of soi wafer chamfering, should
Equipment is used for the corrosion treatmentCorrosion Science in SOI preparation process after chamfering.
Background technology
In SOI preparation fields, when device layer thickness is more than 1 μm, it is impossible to carry out device layer using film transferring technique
Transplanting, needs to carry out the mesh that mechanical grinding and chemically mechanical polishing are thinned to target thickness to reach device layer after wafer bonding
's；As silicon chip edge can not be bonded completely, the thickness of edge devices layer is not enough to resist the power in grinding process, in machine
In tool grinding and polishing process, the position of silicon chip edge occurs the situation of breakage, causes the scuffing of silicon wafer devices layer, causes SOI
Silicon chip is scrapped, this phenomenon at present mainly by mechanical grinding before silicon chip edge chamfering and chamfering post-etching method solving
Certainly.
The used equipment of conventional chamfering post-etching is mainly one chip edge corrosion equipment or relatively simple and crude list
Body etching tank；One chip etching apparatus is used mainly for the less technique of etching extent, the edge silicon layer thickness 80- after chamfering
On 150 μm of this etching extents required for etching time considerably long, and due to can only monolithic operated, therefore cannot industrialization
Production, batch output；The mode of monomer etching tank is also widely applied to chamfering post-etching this technique before this, but which is right
Temperature and process time can not be precisely controlled, and the bubble produced by reacting is attached to silicon chip surface, makes the uniformity after corrosion
Cannot be guaranteed, corrosion adds, after terminating, the mode for drying up using manually bath, is unfavorable for that the cleanliness factor of silicon chip keeps, and
Whole process needs the safety of personnel's manual operation, personnel also be protected.
Utility model content
The purpose of this utility model is that the etching apparatus after providing a kind of soi wafer chamfering, the equipment can pass through control
System processed heats corrosive liquid, can realize the temperature automatic control in silicon chip working process and regulation as needed, etching time by
Control system is precisely controlled, and placement of the silicon chip from etching tank and taking-up are completed by plant machinery handss, while realizing that silicon chip is produced
Industry metaplasia is produced.
For achieving the above object, the technical solution adopted in the utility model is：
A kind of etching apparatus after soi wafer chamfering, the equipment include TMAH etching tanks, pure water rinse bath, drying tank and
Mechanical hand, the TMAH etching tanks, pure water rinse bath and drying tank are all arranged on device framework；Wherein：
Mechanical hand：For carrying the film magazine for placing silicon chip, film magazine is driven to enter between TMAH etching tanks and pure water rinse bath
Row movement；The mechanical hand can carry out shake action up and down, and jitter amplitude is ± 20mm, is corroded in TMAH etching tanks
When, the bubble for being attached to silicon chip surface is eliminated by the shake action of mechanical hand；The mechanical hand has carrying platform, carries flat
Silicon chip film magazine two can be placed on platform, and the silicon chip quantity of carrying is 1-50 pair.
TMAH etching tanks：For taking up corrosive liquid, silicon chip is carried in mechanical hand and silicon chip is corroded to the cell body；Institute
The bottom for stating TMAH etching tanks is provided with heater, for heating to groove internal corrosion liquid；It is provided with outside the TMAH etching tanks
Membrane pump, membrane pump are connected with inside the TMAH etching tanks with outlet pipe by water inlet pipe；The membrane pump is used for entering
When row chamfering is corroded, the self-loopa of solution is carried out, the equalization of concentration of solution in cell body is made, silicon chip thermally equivalent is made.The TMAH
Automatic lid is provided with the top of etching tank, can be automatically switched off when corroding；Liquid level prison is additionally provided with TMAH etching tanks
Control device and automatic liquid supply device, the automatic liquid supply device before corrosive liquid intensification automatic liquid supply to standard technology liquid level, institute
Stating liquid level monitoring device is used for carrying out sound and light alarm during predetermined distance above liquid level as little as silicon chip in the course of processing.
Pure water rinse bath：Corrode the silicon chip after terminating by mechanical hand transfer to pure water rinse bath, silicon chip is entered using pure water
Row cleaning；The pure water rinse bath carries out multimode cleaning to silicon chip by way of spray, bubbling, overflow and fast row.
Drying tank：After cleaning terminates, operator is put in drying tank by the film magazine that PFA handles will be equipped with silicon chip, is carried out
The drying operation of silicon chip.Nitrogen purging device is provided with its top position in the drying tank, corner position in the drying tank
Heating fluorescent tube is installed, nitrogen purging device and heating fluorescent tube carry out heating, drying to silicon chip in groove jointly；Wherein：The heating
Fluorescent tube totally four, its heating-up temperature are 0-100 DEG C, and temperature error is less than ± 0.1 DEG C；The setting purpose of the nitrogen purging device
It is to be heated evenly silicon chip.Acoustic-optic alarm is provided with top in the drying tank, for operation is pointed out after drying terminates
Member；Top in drying tank is additionally provided with lid, the whole closing of lid described in drying course.
The equipment is additionally provided with control system, while being designed with thermocouple in TMAH etching tanks and drying tank；The thermoelectricity
The temperature information of test is transferred to control system, temperature information regulating and controlling temperature of the control system by reception occasionally；Control system
It is additionally operable to the movement and shake action of control machinery hand.
The equipment is additionally provided with pump drainage wind system, is installed on the side plate of device framework, and the pump drainage wind system is used for discharging
The gas produced in corrosion process.
The method that application the said equipment carries out chamfering corrosion, comprises the steps：
(1) first the corrosive liquid for having configured is heated up, makes the corrosive liquid in TMAH etching tanks reach predetermined set temperature.
(2) silicon chip film magazine to be corroded is placed on mechanical hand carrying platform, silicon chip film magazine can be transferred load to by mechanical hand
TMAH etching tanks, close the automatic lid of TMAH etching tanks, and mechanical hand is shaken up and down, and corrosion terminates rear mechanical hand by silicon chip transfer
Clean into pure water rinse bath.
(3) transfer of silicon chip film magazine is to after pure water rinse bath, according to the cleaning that program set in advance carries out silicon chip.
(4) silicon chip film magazine is transferred to drying tank after terminating and is dried by cleaning, and drying time is set as 10 minutes, temperature
It is set as 60 DEG C.
(5) to dry silicon chip is taken out after terminating.
This utility model has the advantages that：
When the 1st, chamfering corrosion is carried out using this utility model equipment, monitor corrosive liquid by starting temp measuring system (thermocouple)
Temperature, self-loopa of the circulating pump (membrane pump) to corrosive liquid, and controlled and adjusted the temperature of corrosive liquid by control system made
Temperature in chamfering corrosion process can be precisely controlled, and in cell body, solution concentration is uniform, meets the actual temperature need of silicon slice corrosion
Ask, it is ensured that prepare high-quality silicon chip.
2nd, this utility model is made in corrosion process from generation by control system according to the control machinery hands movement for setting
The bubble for being attached to silicon chip surface departs from time and comes, it is ensured that the effect of corrosion.
3rd, this utility model equipment is mainly used in the cleaning of the silicon burn into after 150mm or 200mm SOI wafer chamferings and dries
Technique, by way of control system sets, makes chamfering corrosion process accurate, stable, clean, while carrying out automatically, Ke Yishi
Existing mass production.
Description of the drawings
Top views of the Fig. 1 for this utility model chamfering etching apparatus structure.
Fig. 2 is the left view of this utility model chamfering etching apparatus structure.
Fig. 3 is the flow chart of this utility model chamfering caustic solution.
In figure：1- mechanical hands, the automatic lids of 2-, 3-TMAH etching tanks, 4- pure water rinse baths, 5- drying tanks, 6- equipment frames
Frame, 7- pump drainage wind systems.
Specific embodiment
This utility model is the equipment for wafer chamfering post-etching, its structure such as Fig. 1-2, equipment TMAH etching tanks 3,
Pure water rinse bath 4, drying tank 5 and mechanical hand 1, the TMAH etching tanks 3, pure water rinse bath 4 and drying tank 5 are all arranged on equipment
On framework 6；Mechanical hand therein 1 is used for carrying the film magazine for placing silicon chip, drives film magazine in TMAH etching tanks 3 and pure water rinse bath
Move between 4.Mechanical hand 1 has carrying platform, can place silicon chip film magazine two, the silicon chip number of carrying on carrying platform
Measure as 1-50 pair.In corrosion process, mechanical hand can be shaken up and down, and jitter amplitude is ± 20mm.
The TMAH etching tanks 3 are used for taking up corrosive liquid, and carrying silicon chip in mechanical hand carries out corruption to silicon chip to the cell body
Erosion.Heater is set in 3 bottom of TMAH etching tanks, full level condition next minute can heat up 3 DEG C.
Membrane pump is provided with outside the TMAH etching tanks 3, have on membrane pump the water inlet pipe that is connected with TMAH etching tanks and
Outlet pipe；The membrane pump is used for the self-loopa of solution, makes the equalization of concentration of solution in cell body, makes silicon chip thermally equivalent.Described
The top of TMAH etching tanks 3 is provided with automatic lid 2, can be automatically switched off when corroding, and automatic lid 2 is in corrosion process
TMAH etching tanks can be covered prevents solution vaporization at high temperature.Liquid level monitoring device is additionally provided with TMAH etching tanks 3 with benefit automatically
Liquid device, the automatic liquid supply device corrosive liquid intensification before automatic liquid supply to standard technology liquid level, the liquid level monitoring device
For carrying out sound and light alarm during predetermined distance above the as little as silicon chip of liquid level in the course of processing.
Nitrogen purging device and heating fluorescent tube is provided with the drying tank 5, and heating fluorescent tube is located at drying tank corner location；Nitrogen
Air-blowing sweeping device is located at the top of drying tank 5, persistently blows out hot nitrogen in drying course.It is provided with top in the drying tank 5
Acoustic-optic alarm, for pointing out operator after drying terminates；Top in drying tank is additionally provided with lid, in drying course
The whole closing of the lid.
The equipment is additionally provided with control system, while thermocouple is designed with TMAH etching tanks and drying tank, for monitoring
The temperature of each within the chamber；The temperature information of test is transferred to control system by the thermocouple, and control system is by reception
Temperature information regulating and controlling temperature；Control system is additionally operable to the movement of control machinery hand and shake action.The equipment is additionally provided with pump drainage wind
System 7, is installed on the side plate of device framework 6, and the pump drainage wind system 7 is used for discharging the gas produced in corrosion process.
Fig. 3 show the technological process for carrying out chamfering corrosion using the said equipment, comprises the following steps that：
(1) corrosive liquid for having configured is added to TMAH etching tanks 3, and is warming up to target temperature, make TMAH etching tanks 5
Interior corrosive liquid reaches state of the art.
(2) after corrosion liquid temp reaches design temperature, silicon chip film magazine to be corroded is placed on 1 microscope carrier of mechanical hand,
Silicon chip film magazine can be transferred load to TMAH etching tanks 3 by mechanical hand 1, and close the automatic lid 2 of etching tank, on now mechanical hand 1 starts
Lower shake, corrosion process start, and corrosion terminates rear mechanical hand (1) and silicon chip is transferred load to cleaning in pure water rinse bath 4.
(3) transfer of silicon chip film magazine is to after pure water rinse bath 4, according to the cleaning that program set in advance carries out silicon chip.
(4) silicon chip film magazine is transferred to drying tank 5 after terminating and is dried by cleaning, and drying time is set as 10 minutes, temperature
Degree is set as 60 DEG C.
(5) to dry silicon chip is taken out from drying tank 5 after terminating.
When first silicon chip is transferred to drying tank is dried, mechanical hand can be put into second batch silicon chip, the like,
Corrosion operation is carried out by control system control circulation.
Claims (8)
1. the etching apparatus after a kind of soi wafer chamfering, it is characterised in that：The equipment include TMAH etching tanks, pure water rinse bath,
Drying tank and mechanical hand, the TMAH etching tanks, pure water rinse bath and drying tank are all arranged on device framework；Wherein：
Mechanical hand：For carrying the film magazine for placing silicon chip, film magazine is driven to be moved between TMAH etching tanks and pure water rinse bath
Dynamic；
TMAH etching tanks：For taking up corrosive liquid, silicon chip is carried in mechanical hand and silicon chip is corroded to the cell body；
Pure water rinse bath：Corrode the silicon chip after terminating by mechanical hand transfer to pure water rinse bath, silicon chip is carried out clearly using pure water
Wash；
Drying tank：After cleaning terminates, operator is put in drying tank by the film magazine that PFA handles will be equipped with silicon chip, carries out silicon chip
Drying operation.
2. the etching apparatus after soi wafer chamfering according to claim 1, it is characterised in that：The mechanical hand can enter
Row shake action up and down, when being corroded in the TMAH etching tanks, is eliminated by the shake action of mechanical hand and is attached to silicon chip table
The bubble in face；The mechanical hand has carrying platform, can place silicon chip film magazine two, the silicon chip quantity of carrying on carrying platform
For 1-50 pair.
3. the etching apparatus after soi wafer chamfering according to claim 1, it is characterised in that：The TMAH etching tanks
Bottom is provided with heater, for heating to groove internal corrosion liquid；Membrane pump is provided with outside the TMAH etching tanks, and membrane pump leads to
Cross water inlet pipe to be connected with inside the TMAH etching tanks with outlet pipe.
4. the etching apparatus after the soi wafer chamfering according to claim 1 or 3, it is characterised in that：The TMAH etching tanks
Top be provided with automatic lid, can be automatically switched off when corroding；Liquid level monitoring device is additionally provided with TMAH etching tanks
With automatic liquid supply device, the automatic liquid supply device corrosive liquid intensification before automatic liquid supply to standard technology liquid level, the liquid level
Supervising device is used for carrying out sound and light alarm during predetermined distance above liquid level as little as silicon chip in the course of processing.
5. the etching apparatus after soi wafer chamfering according to claim 1, it is characterised in that：At which in the drying tank
Top position is provided with nitrogen purging device, and corner location is provided with heating fluorescent tube in the drying tank, nitrogen purging device and plus
Thermolamp pipe carries out heating, drying to silicon chip in groove jointly；Wherein：The heating fluorescent tube totally four, its heating-up temperature is 0-100 DEG C,
Temperature error is less than ± 0.1 DEG C；The setting purpose of the nitrogen purging device is to be heated evenly silicon chip.
6. etching apparatus according to claim 1 or 5 after soi wafer chamfering, it is characterised in that：In the drying tank
Top is provided with acoustic-optic alarm, for pointing out operator after drying terminates；Top in drying tank is additionally provided with lid, is drying
The whole closing of the lid during dry.
7. the etching apparatus after soi wafer chamfering according to claim 1, it is characterised in that：The equipment is additionally provided with control
System, while be designed with thermocouple in TMAH etching tanks and drying tank；The temperature information of test is transferred to by the thermocouple
Control system, temperature information regulating and controlling temperature of the control system by reception；Control system be additionally operable to control machinery hand movement and
Shake action.
8. the etching apparatus after soi wafer chamfering according to claim 1, it is characterised in that：The equipment is additionally provided with pump drainage
Wind system, is installed on the side plate of device framework, and the pump drainage wind system is used for discharging the gas produced in corrosion process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620958252.XU CN206022323U (en) | 2016-08-26 | 2016-08-26 | A kind of etching apparatus after soi wafer chamfering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620958252.XU CN206022323U (en) | 2016-08-26 | 2016-08-26 | A kind of etching apparatus after soi wafer chamfering |
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| Publication Number | Publication Date |
|---|---|
| CN206022323U true CN206022323U (en) | 2017-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201620958252.XU Active CN206022323U (en) | 2016-08-26 | 2016-08-26 | A kind of etching apparatus after soi wafer chamfering |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180325A (en) * | 2019-12-31 | 2020-05-19 | 杭州中欣晶圆半导体股份有限公司 | Method for improving operating efficiency of etching machine |
| CN111341856A (en) * | 2020-02-28 | 2020-06-26 | 通威太阳能(眉山)有限公司 | Dewatering and drying method for texturing |
| CN113702276A (en) * | 2021-07-28 | 2021-11-26 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Corrosion environment and corrosion characteristic dynamic acquisition device |
| CN116908654A (en) * | 2023-07-24 | 2023-10-20 | 扬州国宇电子有限公司 | Automatic corrosion uncapping device for semiconductor packaging device |
-
2016
- 2016-08-26 CN CN201620958252.XU patent/CN206022323U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180325A (en) * | 2019-12-31 | 2020-05-19 | 杭州中欣晶圆半导体股份有限公司 | Method for improving operating efficiency of etching machine |
| CN111341856A (en) * | 2020-02-28 | 2020-06-26 | 通威太阳能(眉山)有限公司 | Dewatering and drying method for texturing |
| CN113702276A (en) * | 2021-07-28 | 2021-11-26 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Corrosion environment and corrosion characteristic dynamic acquisition device |
| CN113702276B (en) * | 2021-07-28 | 2023-12-05 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Corrosion environment and corrosion characteristic dynamic acquisition device |
| CN116908654A (en) * | 2023-07-24 | 2023-10-20 | 扬州国宇电子有限公司 | Automatic corrosion uncapping device for semiconductor packaging device |
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