JP4412540B2 - Substrate processing equipment - Google Patents

Description

  The present invention provides a substrate for performing a predetermined treatment by immersing a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk (hereinafter simply referred to as “substrate”) in a heated treatment liquid. The present invention relates to a processing apparatus.

  2. Description of the Related Art Conventionally, there is known an apparatus that performs predetermined processing by simultaneously immersing a plurality of substrates in a processing tank in which processing liquid is stored. In such a substrate processing apparatus, for example, when an etching process for selectively removing a Si3N4 layer formed as an interlayer insulating film on a substrate with phosphoric acid is performed, the purpose is to increase the progress speed of the etching process A phosphoric acid solution (etching solution) heated to a temperature higher than room temperature is used. And the warming of phosphoric acid is performed, for example, by a throwing heater or the like provided in the treatment tank (for example, Patent Document 1).

JP-A-11-154665

  Here, in the conventional etching process, the etching amount of the interlayer insulating film is allowed to about several hundred nm. However, as represented by the system LSI, due to the recent demand for further miniaturization of the wiring pattern, higher accuracy of the etching amount in the etching process is required. Therefore, even in the etching process, it is required to uniformly etch the entire surface of the substrate with a thickness of about several nm. As a result, when the temperature distribution of the hot phosphoric acid stored in the processing tank is non-uniform, there has been a problem that the etching process cannot be performed uniformly to the order of several nanometers over the entire surface of the substrate.

  In addition, when the substrate is transferred from the treatment tank to the rinse tank in order to perform the cleaning process with pure water after the etching process with phosphoric acid is completed, the etching process also proceeds during the period of transfer from the treatment tank to the rinse tank. That is, phosphoric acid is heated during the etching process, and the substrate is similarly heated. For this reason, when the heated substrate is transported with phosphoric acid attached thereto, the etching process further proceeds at the adhering portion, resulting in a problem that the uniformity of the etching amount cannot be maintained over the entire surface of the substrate.

  The above problems are not limited to the etching process, and similarly occur when a predetermined substrate process is performed with a heated processing solution.

  Therefore, an object of the present invention is to provide a substrate processing apparatus that enables good substrate processing by making the temperature distribution of the processing liquid in the processing tank substantially uniform.

In order to solve the above problems, the invention of claim 1 is a substrate processing apparatus for performing a predetermined process on a substrate with a processing liquid, and a processing tank for storing the processing liquid, and a substrate for the processing liquid in the processing tank. A substrate holding mechanism for holding, a processing liquid supply part for supplying a processing liquid to the processing tank, a processing liquid heating part for heating the processing liquid, and a process stored in the processing tank and heated by the processing liquid heating part comprising a gas supply unit for supplying gaseous heated to the liquid surface the liquid, and a circulation path for supplying the treatment solution discharged process liquid again from the processing liquid supply unit from the processing bath, the processing The liquid heating unit is provided in the middle of the circulation path, and includes a storage unit for storing the processing liquid, and a storage unit heater for heating the processing liquid in the storage unit, and the gas supply unit A gas supply nozzle for supplying gas to the liquid surface of the treatment liquid; A gas supply pipe having an end connected to the gas supply nozzle and supplying gas to the gas supply nozzle, and the gas flowing through the gas supply pipe and the processing liquid in the storage section are A part of the gas supply pipe is arranged around the storage part so as to be exchanged .
According to a second aspect of the present invention, in the substrate processing apparatus of the first aspect, the gas supply pipe is provided at least at a portion between the portion disposed around the storage portion and the gas supply nozzle. A belt-like heater for heating the gas flowing through the gas supply pipe is further provided.

The invention of claim 3 is the substrate processing apparatus according to claim 1 or 2 , wherein the processing liquid heating unit is provided outside the processing tank, and the processing liquid stored in the processing tank is stored in the processing tank. A substrate processing apparatus comprising a processing tank heater for heating.

According to the invention described in claims 1 to 3 , since the gas heated from the gas supply unit is supplied to the liquid level of the processing liquid heated by the processing liquid heating unit, the temperature of the liquid level is decreased. As a result, it is possible to uniformly perform processing such as etching on the substrate with the processing liquid in the processing tank.

Moreover , according to invention of Claim 1-Claim 3 , the gas supplied into a processing tank from a gas supply part can be heated with a simple structure.

In particular, according to the second aspect of the present invention, it is possible to suppress a temperature drop of the gas in the middle of the gas supply pipe by the belt-shaped heater.

Moreover, according to invention of Claim 1-Claim 3 , the process liquid stored by a process tank can be heated with a simple structure.

Further , according to the first to third aspects of the invention, the storage heater heats the treatment liquid and also heats the gas, so that the liquid / gas can be heated with one heater.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<1. First Embodiment>
<1.1. Configuration of substrate processing apparatus>
FIG. 1 is a diagram showing an example of the overall configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention. Here, the substrate processing apparatus 1 is a so-called batch type apparatus, and a plurality of substrates are simultaneously immersed in a chemical solution such as phosphoric acid or pure water (hereinafter collectively referred to as “processing solution”). Etching or rinsing is performed. As shown in FIG. 1, the substrate processing apparatus 1 mainly includes a processing chamber 10, a processing tank 20, a lifter 40, and a chemical liquid preparation tank 50.

  The processing chamber 10 is a housing that accommodates the processing tank 20, the nitrogen gas supply nozzle 12, the lifter 40, and the like therein. The upper part of the processing chamber 10 can be opened and closed by a sliding opening / closing mechanism (not shown). When the upper portion of the processing chamber 10 is opened, the substrate can be carried in and out from the opened portion. On the other hand, in a state where the upper portion of the processing chamber 10 is closed, the inside can be made a sealed space.

  The lower portion of the processing chamber 10 is connected to the pump 35 through an exhaust pipe 36. Therefore, by driving the pump 35, the atmosphere in the processing chamber 10 is exhausted out of the processing chamber 10 through the exhaust pipe 36.

  The processing tank 20 is formed of quartz and is a tank that stores phosphoric acid used as an etching solution. In the processing tank 20, an etching process for selectively removing the Si 3 N 4 layer or the like formed on the substrate W by the stored etching solution is performed. As shown in FIG. 1, the processing tank 20 mainly includes a heater 29, a temperature detector 26, a processing liquid supply nozzle 22, and a recovery unit 25.

  The heater 29 is a heating unit provided on the outer wall near the bottom of the treatment tank 20 and is formed by bonding a film-like heater with a heat-resistant adhesive. The temperature detector 26 is disposed in the processing tank 20 and detects the temperature of the stored etching solution 21. Thereby, in order to control the output of the heater 29 based on the temperature detected by the temperature detector 26, the etching solution 21 in the processing tank 20 is heated to 150 to 180 degrees (preferably 150 to 165 degrees). ) Is maintained within a predetermined temperature range (hereinafter also referred to as “etching temperature”).

  The two processing liquid supply nozzles 22 (22a, 22b) are nozzles that are arranged near the bottom of the processing tank 20 and extend in the vertical direction on the paper surface, and supply the etching liquid into the processing tank 20.

  Further, a recovery unit 25 that recovers the etching solution overflowing from the processing tank 20 is provided near the upper end of the processing tank 20. That is, during the etching process, the etching solution is continuously supplied into the processing tank 20 from the two processing solution supply nozzles 22. Therefore, a part of the etching solution overflows from the upper end portion of the processing tank 20 and is recovered by the recovery unit 25. Then, the recovered etching solution is supplied to the steam / water separator 38 via the recovery pipe 37.

  The air / water separator 38 collects the etching solution and gas collected by the collecting unit 25 during the etching process, and separates the collected etching solution and gas into a liquid phase and a gas phase. Further, when the etching process is not performed in the processing tank 20, the atmosphere in the processing chamber 10 is used to exhaust the atmosphere from the recovery unit 25 to the outside of the processing chamber 10. Then, the etching solution contained in the separated liquid phase is reintroduced into the chemical solution preparation tank 50 through the recovery pipe 37 from the steam / water separation unit 38. That is, the etching solution recovered by the recovery unit 25 is stored in the chemical liquid preparation tank 50 via the recovery pipe 37 and the steam / water separation unit 38.

  The chemical liquid preparation tank 50 is a tank formed of quartz, temporarily stores an etching liquid that is not used in the etching process and an etching liquid recovered by the recovery unit 25, and heats the etching liquid to a predetermined temperature. maintain. As shown in FIG. 1, the chemical liquid preparation tank 50 mainly includes an exhaust pipe 54 and a heater 53.

  Here, the unused etching solution for the etching process is mixed with phosphoric acid supplied from the etching solution supply source 61 and pure water supplied from the pure water supply source 71 at a predetermined ratio by the mixing valve 63. Can be obtained. The unused etching solution is supplied to the chemical solution preparation tank 50 through the pipe 64 and the recovery pipe 37. That is, in the present embodiment, the etching solution supply source 61, the pure water supply source 71, and the mixing valve 63 are used as a processing solution supply unit.

  The exhaust pipe 54 is connected in communication with the upper atmosphere in the chemical liquid preparation tank 50 and can exhaust the atmosphere in the chemical liquid preparation tank 50 to the outside.

  The heater 53 is a heating unit provided on the outer wall near the bottom of the chemical liquid preparation tank 50. Thereby, since the output of the heater 53 can be controlled based on the liquid temperature by a temperature detector (not shown), the etching liquid 51 stored in the chemical liquid preparation tank 50 is heated and maintained at the etching temperature.

  The etching liquid heated to a predetermined temperature drives the pump 34 provided in the middle of the common pipe 31 to correspond to the common pipe 31 and each processing liquid supply nozzle 22 (22a, 22b). It is supplied into the processing tank 20 from each processing liquid supply nozzle 22 (22a, 22b) via the branched pipe 32 (32a, 32b).

  A filter 33 is provided in the middle of the common pipe 31 as shown in FIG. The filter 33 removes impurities contained in the used etching collected by the etching process. Therefore, the etching process can be performed satisfactorily even when the collected etching solution is reused.

  As described above, the etching liquid overflowing from the processing tank 20 and recovered by the recovery unit 25 is supplied again into the processing tank 20 through the recovery pipe 37, the common pipe 31, and the branch pipe 32 and reused. Is done. That is, in the present embodiment, the recovery pipe 37, the common pipe 31, and the branch pipe 32 are used as an etching liquid circulation path. In addition, the etching solution recovered by the recovery unit 25 is heated and maintained at a predetermined temperature by the chemical solution mixing tank 50 provided in the middle of the circulation path.

  Further, in the present embodiment, an inert gas (this embodiment) heated from the nitrogen gas supply nozzle 12 is provided near the upper portion of the etching solution 21 that is stored in the processing tank 20 and heated and maintained at a predetermined temperature. In the form, nitrogen gas) is supplied.

  The nitrogen gas supply nozzle 12 is a nozzle that extends in a direction perpendicular to the paper surface, and is disposed above the processing tank 20. As shown in FIG. 1, the nitrogen gas supply nozzle 12 is connected in communication with a nitrogen gas supply source 81 via a gas supply pipe 56, a gas introduction pipe 55, a pipe 82, and a valve 83.

  The gas introduction tube 55 is a thin tube formed of quartz, and is disposed in a spiral shape in the vicinity of the chemical liquid preparation tank 50. In the present embodiment, the gas introduction pipe 55 is welded around the chemical liquid preparation tank 50.

  As a result, the nitrogen gas flowing through the gas introduction tube 55 is heated by heat transfer from the heated etching solution in the chemical solution mixing tank 50. That is, the nitrogen gas flowing through the gas introduction pipe 55 is heated by exchanging heat with the etching solution 51 in the chemical solution preparation tank 50. Therefore, it is not necessary to provide extra equipment such as a heating unit in the gas introduction pipe 55 itself, and heating of the nitrogen gas can be performed with a simple configuration, and the manufacturing cost of the substrate processing apparatus 1 can be reduced.

  FIG. 2 is a diagram illustrating an example of the configuration near the gas supply pipe 56. FIG. 3 is a view for explaining the belt heater 58 for heating the nitrogen gas flowing through the gas supply pipe 56. As shown in FIG. 1, the nitrogen gas heated by the gas introduction pipe 55 is introduced into the gas supply pipe 56.

  A belt heater 58a is spirally wound around the gas supply pipe 56. Here, the belt heater 58a is obtained by insulating the heater wire with glass fiber, and has a belt-like shape as shown in FIG. Therefore, it is possible to heat the nitrogen gas that wraps around the gas supply pipe 56 and flows through the gas supply pipe 56. Further, a thermocouple 13 for measuring the temperature of nitrogen gas flowing in the gas supply pipe 56 is provided near the end of the gas supply pipe 56 on the nitrogen gas supply nozzle 12 side (see FIG. 1).

  Thereby, since the output of the belt heater 58 can be controlled based on the temperature of the nitrogen gas detected by the thermocouple 13, the nitrogen gas discharged from the nitrogen gas supply nozzle 12 is heated to 150 to 180 degrees (preferably Is maintained at a predetermined temperature (hereinafter also referred to as “gas discharge temperature”) within a range of 150 to 170 degrees and higher than the temperature of the etching solution 21 stored in the processing bath 20. Note that the gas discharge temperature is obtained in advance by experiments or the like in consideration of the displacement of the pump 35 and the like.

  Further, since the nitrogen gas flowing through the gas introduction pipe 55 is heated by heat transfer from the heated etching solution 51, the temperature of the nitrogen gas flowing through the gas introduction pipe 55 is substantially equal to the etching solution 51 liquid temperature. Same or higher than room temperature. As a result, in the belt heater 58, it is not necessary to raise the temperature of the nitrogen gas from room temperature to the gas discharge temperature, and the power of the belt heater 58 can be reduced.

  Even when the nitrogen gas can be heated to the gas discharge temperature in the gas introduction pipe 55, if the atmosphere in the processing chamber 10 is exhausted by the pump 35, the gas is supplied from the nitrogen gas in the gas supply pipe 56. The temperature of the nitrogen gas decreases due to heat transfer toward the outside of the pipe 56. However, in the present embodiment, by supplying power to the belt heater 58, the temperature of the nitrogen gas can be reached to the nitrogen gas supply nozzle 12 while maintaining the gas discharge temperature. Therefore, a decrease in the temperature of the nitrogen gas can be prevented by supplying a small amount of power.

  When the valve 83 is opened, nitrogen gas heated to a temperature equal to or higher than the liquid temperature of the etching liquid 21 is discharged from the nitrogen gas supply nozzle 12 in the discharge direction AR1 and is stored in the processing tank 20. Supplied near the top of the liquid 21. As a result, it is possible to prevent heat transfer from occurring near the upper portion of the etching solution 21 stored in the processing bath 20 toward the atmosphere of the processing chamber 10 and reducing the liquid temperature near the upper portion of the etching solution 21 from the etching temperature. .

  That is, when the heated nitrogen gas is not supplied, the etching solution 21 in the processing tank 20 is heated by the heater 29 provided on the bottom outer wall of the processing tank 20. On the other hand, heat transfer occurs from the vicinity of the upper portion of the processing tank 20 toward the atmosphere of the processing chamber 10. Thereby, the temperature of the etching solution 21 is higher in the vicinity of the bottom of the processing bath 20 than in the vicinity of the upper portion of the processing bath 20, and the temperature distribution of the etching solution 21 is not uniform. Therefore, the etching amount in the vicinity of the bottom of the processing tank 20 is larger than that in the vicinity of the top of the processing tank 20, and the etching amount is different in each part on the substrate W.

  On the other hand, when supplying the heated nitrogen gas, the heat transfer from the etching solution 21 can be compensated by the nitrogen gas heated to the gas discharge temperature. Therefore, the temperature distribution in each part of the etching solution 21 stored in the processing bath 20 can be maintained substantially uniformly, and a good etching process can be uniformly performed to a few nm over the entire surface of the square substrate immersed in the etching solution 21. Can do.

  The lifter 40 is a mechanism that immerses a set of a plurality (25 or 50 in this embodiment) of substrates W in the etching solution 21 stored in the processing bath 20. As shown in FIG. 1, the lifter 40 includes three holding bars 41. Each of the three holding bars 41 is provided with a plurality of holding grooves (not shown) arranged in the direction perpendicular to the paper surface at predetermined intervals so that the outer edge of the substrate W fits in and holds the substrate W in a standing posture. It is done. Thereby, the lifter 40 moves up and down in the vertical direction while holding each substrate W in the standing posture by the three holding bars 41.

  The control unit 90 includes a memory 91 that stores programs, variables, and the like, and a CPU 92 that executes control in accordance with the programs stored in the memory 91. The CPU 92 performs the output control of the heaters 29 and 53, the lift control of the lifter 40, the opening / closing control of the mixing valve 63 and the valve 83, and the like at predetermined timings according to the program stored in the memory 91.

<1.2. Substrate processing sequence>
Here, a sequence of substrate processing performed in the processing chamber 10 of the substrate processing apparatus 1 will be described. First, the slide opening / closing mechanism (not shown) of the processing chamber 10 is opened, and the lifter 40 ascends to the outside of the processing chamber 10 via the slide opening / closing mechanism. Subsequently, the lifter 40 receives a set of a plurality of substrates W from a transfer robot (not shown).

  Next, the lifter 40 is lowered, the slide opening / closing mechanism (not shown) is closed, and a plurality of substrates W are immersed in an etching solution stored in the processing bath 20 to etch each substrate W. Processing is performed.

  Here, during the etching process, power is continuously supplied to each of the heaters 29 and 35 and the pump 34 is continuously driven, so that the etching liquid whose liquid temperature is set to the etching temperature is supplied into the processing tank 20. The etching solution overflows from the upper part of the processing tank 20. Then, the overflowing etching solution is recovered by the recovery unit 25 and supplied again to the chemical solution preparation tank 50. That is, the etching solution is circulated and supplied to the processing tank 20.

  Further, during the etching process, the nitrogen gas maintained at the gas discharge temperature is continuously supplied from the nitrogen gas supply nozzle 12. That is, since the electric power is continuously supplied to the belt heater 58 during the etching process, the nitrogen gas is heated by the chemical liquid preparation tank 50 and the belt heater 58, and the etching liquid 21 in the processing tank 20 is supplied from the nitrogen gas supply nozzle 12. Nitrogen gas maintained at the gas discharge temperature is continuously supplied toward the upper part.

  Thereby, the heat which moves toward the atmosphere of the processing chamber 10 from the etching liquid 21 can be compensated by the heat of the nitrogen gas heated to the gas discharge temperature. Therefore, the temperature distribution in each portion of the etching solution 21 stored in the processing bath 20 can be maintained substantially uniformly, and a good etching process can be uniformly and uniformly performed on the whole surface of the substrate W immersed in the etching solution 21 to about several nm. Can do.

  After the etching process is completed, the slide opening / closing mechanism (not shown) is opened, the lifter 40 is raised above the processing chamber 10, and a set of a plurality of processed substrates W is transferred from the lifter 40 to the transfer robot (not shown). ), The processing in the processing chamber 10 is completed.

<1.3. Advantages of the substrate processing apparatus of the first embodiment>
As described above, the substrate processing apparatus 1 according to the first embodiment can maintain the temperature of the etching solution heated to the etching temperature by the heater 53 of the chemical solution preparation tank 50 and the heater 29 of the processing tank 20. Further, by supplying nitrogen gas maintained at a gas discharge temperature equal to or higher than the etching temperature from the nitrogen gas supply nozzle 12 to the vicinity of the upper portion of the processing tank 20, heat transfer from the etching solution 21 to the atmosphere in the processing chamber 10 is compensated. it can. Therefore, the temperature distribution in each part of the etching solution 21 can be maintained substantially uniformly, and a good etching process can be performed.

<2. Second Embodiment>
Next, a second embodiment of the present invention will be described. FIG. 5 is a diagram showing an example of the overall configuration of the substrate processing apparatus 100 of the present embodiment. As shown in FIG. 5, the substrate processing apparatus 100 in the second embodiment is compared with the substrate processing apparatus 1 in the first embodiment.
(1) The method of supplying pure water is different,
(2) having a specific gravity detector 127;
Except for the above, the hardware configuration is the same as that of the substrate processing apparatus 1 of the first embodiment. Therefore, in the following, this difference will be mainly described.

  In the following description, the same reference numerals are given to the same constituent elements as those in the substrate processing apparatus 1 of the first embodiment. Since the components with the same reference numerals have already been described in the first embodiment, description thereof will be omitted in the present embodiment.

<2.1. Configuration of substrate processing apparatus>
The pure water supply nozzle 175 is a nozzle that extends in the direction perpendicular to the paper surface, and is disposed above the processing tank 20 and adjacent to the nitrogen gas supply nozzle 12. The pure water supply nozzle 175 is connected to a pure water supply source 171 through a supply pipe 172 and a valve 173. Thus, when the valve 173 is opened, pure water at substantially room temperature can be supplied from the pure water supply nozzle 175 toward the upper side of the treatment tank 20.

  Further, during the etching process, the etching solution 21 stored in the processing tank 20 is heated to near the boiling point. By supplying a small amount of pure water to the etching liquid 21 in this liquid temperature state, the etching liquid 21 can be prevented from bumping.

  The specific gravity detector 127 is disposed in the processing tank 20 and detects the specific gravity of the stored etching solution 21. Here, in the etching process, the specific gravity of the etching solution is an important parameter that defines the etching amount per unit time, together with the temperature of the etching solution.

  Therefore, the controller 90 controls the opening and closing of the valve 173 and the valve 163 based on the specific gravity value of the etching liquid detected by the specific gravity detector 127 to supply the etching liquid or pure water, so that the specific gravity value of the etching liquid is reduced. Adjust so that it is within the predetermined range. Note that the predetermined range of the specific gravity value to be filled by the etching solution may be obtained in advance by an experiment or the like.

<2.2. Substrate pulling sequence>
Here, when the etching process is completed in the substrate processing apparatus 100, the set of the plurality of substrates W is raised to the outside of the processing chamber 10 by the lifter 40, and pure water cleaning is performed by a transfer robot (not shown). It is conveyed to a rinsing tank (not shown).

  However, when the etching process is completed, each substrate W is heated by the etching solution 21 heated to the etching temperature. Therefore, when each substrate W is transported from the processing tank 20 to the rinsing tank with the etching solution attached, the etching process proceeds at the portion where the etching solution is attached, and as a result, the etching process cannot be performed uniformly over the entire surface of the substrate W. The problem arises.

  Therefore, hereinafter, a procedure for pulling up the substrate W from the etching solution 21 in the processing bath 20 while preventing the occurrence of the above problem will be described. Note that the substrate processing performed in the processing chamber 10 has been described in the first embodiment, and is omitted here.

  When the etching process performed by immersing in the etching solution 21 is completed, the set of the plurality of substrates W is raised by the lifter 40. Further, at the time when the lifter 40 starts to rise or just before the rise, the valve 173 is opened and pure water is supplied toward the upper side of the treatment tank 20. That is, pure water is supplied toward each substrate W that is continuously raised by the lifter 40.

  Thereby, the etching solution adhering to the surface of each substrate W pulled up from the etching solution 21 is removed by pure water. Each substrate W heated by the etching solution 21 is cooled by pure water at approximately room temperature, and the temperature of each substrate W is lowered to a temperature lower than the temperature at which etching can be performed. Therefore, the progress of the etching process on each substrate W is stopped, and the problem that the etching amount in each part on the substrate W becomes nonuniform can be prevented.

  Subsequently, the substrate that has been cooled and cleaned with pure water from the pure water supply source 171 is further raised by the lifter 40 and reaches the upper portion of the processing chamber 10 via a slide opening / closing mechanism (not shown). . Then, each substrate W is transferred from the lifter 40 to a transfer robot (not shown), thereby completing the substrate pulling operation.

<2.3. Advantages of Substrate Processing Apparatus According to Second Embodiment>
As described above, the substrate processing apparatus 100 according to the second embodiment can supply pure water to each substrate W when the substrate W is pulled up from the etching solution 21 after the etching process is completed. Thereby, the temperature of each substrate W can be lowered from the etching temperature while removing the etching solution adhering to each substrate W. Therefore, the progress of the etching process can be stopped reliably, and the problem that the etching amount at each portion on the substrate W is not uniform can be prevented.

<3. Modification>
While the embodiments of the present invention have been described above, the present invention is not limited to the above examples.

  (1) In the first and second embodiments, a belt-shaped belt heater 58 is spirally wound around the gas supply pipe 56, but the present invention is not limited to this. For example, as shown in FIG. 4, a heating element that covers the outside of the gas supply pipe 56 in a cylindrical shape may be used.

  (2) In the first and second embodiments, the etching solution supply source 61, the pure water supply source 71, the nitrogen gas supply source 81, and the pure water supply source 171 are described as components of the substrate processing apparatus. However, the present invention is not limited to this. For example, phosphoric acid, pure water, and nitrogen gas may be supplied from a common pipe in a semiconductor manufacturing factory.

It is a figure which shows an example of the whole structure of the substrate processing apparatus in the 1st Embodiment of this invention. It is a figure which shows an example of a structure of gas supply piping 56 vicinity. It is a figure for demonstrating the belt heater. It is a figure which shows the other example of a structure of gas supply piping 56 vicinity. It is a figure which shows an example of the whole structure of the substrate processing apparatus in the 2nd Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,100 Substrate processing apparatus 10 Processing chamber 12 Nitrogen gas supply nozzle 13 Thermocouple 20 Processing tank 25 Recovery part 26 Temperature detector 29, 53 Heater 34, 35 Pump 38 Air-water separation part 50 Chemical liquid preparation tank 55 Gas introduction pipe 56 Gas Supply piping 58 (58a, 58b) Belt heater 61 Etching solution supply source 63 Mixing valve 71, 171 Pure water supply source 81 Nitrogen gas supply source 90 Control unit 127 Specific gravity detector 175 Pure water supply nozzle W Substrate

Claims (3)

A substrate processing apparatus for performing predetermined processing on a substrate with a processing liquid,
A treatment tank for storing the treatment liquid;
A substrate holding mechanism for holding the substrate in the processing liquid in the processing tank;
A treatment liquid supply unit for supplying a treatment liquid to the treatment tank;
A treatment liquid heating section for heating the treatment liquid;
A gas supply unit that supplies gas heated to the liquid level of the treatment liquid stored in the treatment tank and heated by the treatment liquid heating unit;
A circulation path for supplying the processing liquid discharged from the processing tank again from the processing liquid supply unit;
Equipped with a,
The treatment liquid heating unit
A storage part provided in the middle of the circulation path for storing the processing liquid;
A reservoir heater for heating the treatment liquid in the reservoir;
With
The gas supply unit
A gas supply nozzle for supplying gas to the liquid surface of the treatment liquid;
One end is connected in communication with the gas supply nozzle, and a gas supply pipe for supplying gas to the gas supply nozzle;
With
A part of the gas supply pipe is arranged around the reservoir so that the gas flowing through the gas supply pipe exchanges heat with the processing liquid in the reservoir. Substrate processing equipment. The substrate processing apparatus according to claim 1,
The gas supply pipe is
A belt-like heater for heating the gas flowing in the gas supply pipe to at least a part between the portion arranged around the storage unit and the gas supply nozzle;
A substrate processing apparatus further comprising: In the substrate processing apparatus of Claim 1 or Claim 2,
The treatment liquid heating unit
A heater for the processing tank that is provided outside the processing tank and heats the processing liquid stored in the processing tank;
The substrate processing apparatus characterized by comprising a.

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