JPH11186217A - Wafer processor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain desired chemical processing, such as for the amount of etching, even at the time of putting in wafers into a processing liquid. SOLUTION: A wafer processor has a structure that a control means 30 controls a current to a temperature adjuster 28 so as to raise previously the temperature of a processing liquid 21 by the amount of heat corresponding to the thermal capacity of the whole members including a plurality of wafers 2 before the wafers 2 are dipped into the liquid 21 in a phosphoric acid tank 22 by a lifter 23, therefore, the temperature, which is reduced at the time of putting in the wafers 2 into the liquid 21, of the liquid 21 can be significantly inhibited, etching of the wafers 2 can be performed at the optimum temperature and even at the time of putting in the wafers 2 into the liquid 21, a desired amount of etching is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a process tank for storing, for example, a chemical solution or a processing solution (for example, a chemical solution and a pure water solution are collectively referred to as a processing solution). The present invention relates to a substrate processing apparatus for immersing a thin substrate to be processed (hereinafter simply referred to as a substrate) and performing predetermined processing on the substrate.

[0002]

2. Description of the Related Art Conventionally, in a manufacturing process of a precision electronic substrate using a semiconductor wafer, a glass substrate for a liquid crystal display panel, or the like, a substrate processing apparatus that performs various surface treatments by immersing the substrate in a processing liquid has been used. I have. In such a surface treatment, the substrate is sequentially immersed in a chemical tank storing a chemical such as an etching solution (a phosphoric acid solution, etc.) and a washing tank storing pure water as a rinsing liquid. After the application, a rinsing process is further performed to wash out the chemical solution attached to the substrate and particles generated by the chemical solution in the washing tank.

A treatment liquid supply system for supplying pure water to the chemical solution tank is provided. By adding a certain amount of pure water to a phosphoric acid solution, a desired concentration can be obtained by compensating for evaporation. ing. In addition, the chemical liquid overflowing from the chemical liquid tank together with contaminants such as particles that have fallen off the substrate surface in the chemical liquid tank passes through a temperature controller using electronic cooling and heating by a heater and a filter using a circulation pump. While maintaining the temperature, the filter removes the contaminants and is refreshed, and then returned to the chemical tank and circulated again.

As described above, a plurality of substrates are immersed in a phosphoric acid solution having a constant concentration at a constant temperature for a certain period of time to perform a chemical treatment such as an etching process, thereby obtaining a desired chemical treatment amount such as an etching amount. ing.

[0005]

In the above-mentioned conventional configuration,
A certain amount of pure water is added to the phosphoric acid solution to supply the phosphoric acid solution into the chemical solution tank to compensate for the evaporation, thereby obtaining a desired concentration. In this case, as shown in FIG. 5, the temperature of the phosphoric acid solution decreases, and the etching rate of the silicon nitride film to be etched also decreases. For this reason, as shown in FIG. 6, the replenishment of pure water to the phosphoric acid solution has been stopped for a predetermined time (T1) after the substrate is loaded (lot in) in order to quickly recover the lowered temperature of the phosphoric acid solution. By stopping the replenishment of pure water at the time of loading the substrate, the recovery of the lowered temperature of the phosphoric acid solution is accelerated, but during the suspension period of the pure water replenishment (T1), only the phosphoric acid solution is supplied. Therefore, as shown in FIG. 6, the concentration of the phosphoric acid solution changes to a higher one. Therefore, in addition to the decrease in the etching rate of the silicon nitride film due to the decrease in the temperature of the phosphoric acid solution, the etching rate of the silicon oxide film further increases due to the increase in the concentration of the phosphoric acid solution. There is a problem that a desired etching amount cannot be etched at a desired selection ratio with respect to the film.

An object of the present invention is to solve the above-mentioned conventional problems, and an object of the present invention is to provide a substrate processing apparatus which can obtain a desired processing amount such as an etching amount even when a substrate is put into a processing solution. .

[0007]

According to the present invention, there is provided a substrate processing apparatus for performing processing by immersing a substrate in a processing liquid supplied to a processing tank. Means, before dipping the substrate in the processing liquid, having a control means for controlling the temperature adjustment means to change the processing liquid temperature in advance by the amount of heat according to the heat capacity of the entire substrate to be dipped, Is what you do.

With this configuration, the control means controls the temperature adjusting means so as to change the temperature of the processing liquid by a heat amount corresponding to the heat capacity of the entire substrate to be dipped before dipping the substrate in the processing liquid. , The temperature of the processing solution that drops when the wafer is loaded is greatly suppressed, and substrate processing at the optimum temperature becomes possible. Even when the substrate is loaded into the processing solution, processing such as a desired etching amount can be performed within a predetermined time. The amount is obtained.

Further, the substrate processing apparatus of the present invention is a substrate processing apparatus for performing processing by immersing a substrate in a phosphoric acid solution supplied into a processing tank, wherein the phosphoric acid solution overflowing from the processing tank is returned to the processing tank. The processing liquid circulating means for circulating the solution is provided with a temperature adjusting means for adjusting the temperature of the circulating phosphoric acid solution. Control means for controlling the temperature adjusting means so as to change the processing liquid temperature in advance by an amount of heat according to the heat capacity of the processing liquid.

Conventionally, when a processing solution is a phosphoric acid solution for etching a silicon nitride film, an etching selectivity with respect to a silicon oxide film as a surface protective film is important. Both the temperature and the concentration increase as the temperature increases, and the etching amount of the silicon nitride film to be etched increases as the temperature of the phosphoric acid solution increases, but decreases as the concentration increases. Therefore, when the substrate is put into the phosphoric acid solution, the temperature of the phosphoric acid solution decreases, and the concentration of the phosphoric acid solution increases by stopping the replenishment of pure water during the period (T1), so that the etching rate of the silicon nitride film to be etched is increased. The etching rate of the silicon oxide film as the surface protective film increases with the increase in the concentration of the phosphoric acid solution, so that the silicon nitride film to be etched can be largely etched. However, the silicon oxide film that was not the object of etching was etched more than necessary, and a desired etching selectivity was not obtained.

Thus, when the treatment liquid is a phosphoric acid solution,
The replenishment of pure water determines the concentration of the phosphoric acid solution, and the concentration of the phosphoric acid solution greatly affects the etching rate. In the past, pure water replenishment stop control was performed to suppress a drop in the liquid temperature due to wafer input.However, before immersion of the substrate in the phosphoric acid solution, only a heat amount corresponding to the heat capacity of the entire substrate to be immersed was used. If the temperature of the processing solution is changed in advance, the temperature of the processing solution which drops when the wafer is charged is greatly suppressed, so that it is not necessary to control the stoppage of the replenishment of pure water, and the concentration of the phosphoric acid solution is almost always reduced. It is constant, and the decrease in the etching selectivity between the nitride film and the oxide film due to the increase in the concentration of the phosphoric acid solution as in the prior art can be largely suppressed, and a desired etching selectivity can be obtained.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited to the following embodiments.

FIG. 1 is a plan view showing a schematic configuration of a wet station incorporating a substrate processing apparatus according to an embodiment of the present invention, and the surface indicated by arrow F is the front of the apparatus.

In FIG. 1, wet station 1
Is a transfer side for collectively transferring a plurality of wafers 2 from a carrier 3 containing a plurality of wafers 2 to a transfer robot (not shown) for transferring the plurality of wafers 2 to each processing tank. And a conveyer-side wafer transfer unit 6 for transferring a plurality of wafers 2 from the transfer robot (not shown) to the carrier 3 at once, The wafer 2 is successively immersed in a plurality of processing tanks adjacent to the replacement unit 5 and each storing various processing liquids such as a chemical liquid or pure water, thereby performing a series of various processings such as a chemical liquid processing and a water washing processing. Processing unit 7,
A drying unit 8 is provided between the processing unit 7 and the wafer transfer unit 6 on the unloading side and spin-drys the processed wafer 2 by the processing unit 7.

The processing unit 7 includes a hand cleaning unit 9 for cleaning a hand portion of a transfer robot (not shown) for transferring a plurality of wafers 2 to each of the processing tanks, and a side of the hand cleaning unit 9. Is an embodiment of the substrate processing apparatus of the present invention, which has a chemical solution tank storing a chemical solution such as an etching solution as a processing solution.
The substrate has a function of preliminarily raising the temperature of the chemical solution by an amount corresponding to the heat capacity of the entire substrate to be immersed before the substrate is immersed in the chemical solution, as will be described in detail later. The first and second chemical treatment units 10 and 11 and a functional water treatment unit 12 that is adjacent to the chemical treatment unit 11 and quickly rinses phosphoric acid attached to the wafer 2 with water.
And a final rinsing section 13 adjacent to the functional rinsing section 12 and finally rinsing the wafer 2 with water.

The first and second chemical processing units 10 and 11 are provided because the chemical processing by these chemical processing units 10 and 11 takes a longer time than the processing by other processing units. This is because a chemical solution treatment is performed in parallel to shorten the time.

Here, an embodiment of the substrate processing apparatus according to the present invention will be described in detail with respect to the first chemical processing section 10 in the case where a phosphoric acid solution is used as a chemical for removing a nitride film. The chemical processing section 11 has the same configuration as that of the first chemical processing section 10.

FIG. 2 is a schematic diagram showing a schematic configuration of a main part of the first chemical liquid processing section 10 of FIG. In FIG. 2, a first chemical processing section 10 constituting a substrate processing apparatus according to one embodiment of the present invention can store a phosphoric acid solution 21 and can immerse a plurality of wafers 2 in the phosphoric acid solution 21. A phosphoric acid treatment tank 22 having a rectangular opening at the top as described above, a lifter device 23 capable of vertically moving inside and outside the phosphoric acid treatment tank 22 while holding a plurality of wafers 2 by arm members 23a,
Phosphoric acid solution 21 overflowing from 2
And a treatment liquid circulating means 24 for circulating the treatment liquid back into the apparatus.

The chemical solution treatment tank 21 is filled with pure water (DIW) together with the phosphoric acid solution 21. An overflow tank 25 for receiving the overflowed phosphoric acid solution 21 is provided on the upper outer peripheral portion of the phosphoric acid treatment tank 22. Further, a pair of tubular processing liquid supply units 26 for circulating and supplying the phosphoric acid solution 21 therein is provided at the bottom of the phosphoric acid processing tank 22. Each has a plurality of nozzle ports (not shown) for discharging the processing liquid, which are opened toward the central part in the phosphoric acid processing tank 22.

The processing liquid circulating means 24 is provided with a circulating pump 27 connected to the bottom of the overflow tank 25 by piping.
A temperature controller 28 for controlling and adjusting the temperature of the phosphoric acid solution 21 circulated by the circulation pump 27 by means of a heater electronic cooling system; a filter 29 for filtering contaminants such as particles from the phosphoric acid solution 21 by filtering; A pair of tubular processing liquid supply units 26 are sequentially connected by respective pipes 24a. Thereby, the phosphoric acid solution 21 is supplied into the phosphoric acid treatment tank 22 from the plurality of nozzle ports (not shown) of the pair of tubular treatment liquid supply units 26 during the phosphoric acid treatment,
The upper opening 2 of the phosphoric acid treatment tank 22 is formed together with contaminants such as particles dropped from the surfaces of the plurality of wafers 2 while forming a liquid flow from the lower part in the tank to the upper part and further to the outer peripheral side of the tank.
After overflowing from the overflow treatment tank 2a and receiving it in the overflow tank 25 and straining it with the filter 29 through the circulation pump 27 and the temperature controller 28 to refresh it, the pair of tubular treatment liquid supply units 26 again feed the phosphoric acid treatment tank 22 Is to be returned to.

Further, control means 30 respectively connected to the drive section (not shown) of the lifter device 23, the control terminals of the circulation pump 27 and the temperature controller 28,
The phosphating tank 22 includes a sequencer and a microcomputer, and controls the drive unit of the lifter device 23, the circulating pump 27 and the temperature controller 28 by control signals from the sequencer and the microcomputer.
Before the plurality of wafers 2 are immersed in the phosphoric acid solution 21 supplied to the inside by the lifter device 23, the phosphoric acid solution 23 is preliminarily prepared by an amount of heat corresponding to the heat capacity of the plurality of wafers 2 to be immersed.
The temperature adjusting means 28 is controlled so as to change (increase or decrease) the temperature.
Even when a plurality of wafers 2 are put into the phosphoric acid solution 21, a chemical processing amount such as a desired etching amount by the phosphoric acid solution 21 is obtained.

That is, when a plurality of wafers 2 are put into the phosphoric acid solution 21, the temperature of the solution decreases. The temperature of the solution that is introduced into the phosphoric acid solution 21 and decreases is offset and suppressed. Actually, the control means 30 senses the diameters of the plurality of wafers 2 to be immersed by the sensor means (not shown) or the like, and counts the number of the wafers by the counter means (not shown) or the like to thereby immerse the wafers. Information on the diameter and the number of wafers 2 to be obtained is obtained, and the input material (the wafer 2
In addition to the above, the heat capacity of the lifter device 23 (including the arm member 23a, etc.) is calculated, and the temperature adjusting means 28 is increased according to the calculated value so as to raise the liquid temperature in advance as shown in FIG.
The amount of current supplied to the wafer is controlled and output, so that there is no change in the liquid temperature (lowering of the liquid temperature) due to the introduction of the wafer as in the prior art, and the etching rate does not decrease at the optimum temperature. . This heat capacity is calculated by storing data such as experimental data values in current control for each diameter and number of wafers 2 in a memory unit (not shown), and using data corresponding to the diameter and number of wafers 2. The control means 30 controls and outputs the amount of current supplied to the temperature adjusting means 28.

As described above, when the etching solution as the processing solution is a phosphoric acid solution, the concentration of the phosphoric acid solution 21 is determined by the replenishment of pure water which compensates for the evaporation.
Since the concentration of 1 has a great influence on the etching rate, conventionally, the control of stopping the replenishment of pure water has been performed in order to suppress a decrease in the liquid temperature due to the introduction of the wafer. Therefore, the concentration of the phosphoric acid solution 21 does not change as shown in FIG.
In this case, a decrease in the etching selectivity due to an increase in the concentration of GaN can be greatly suppressed.

More specifically, for example, 50 wafers 2 having a diameter of 8 inches are immersed in a phosphoric acid solution 21 having a chemical volume of 20 liters to perform an etching process and a circulation pump 2
7, when the liquid supply capacity is 12 l / min, the liquid temperature is set to 160 degrees Celsius, and the liquid temperature is set to 160 degrees Celsius + 3 degrees Celsius only for a predetermined time before wafer introduction, and otherwise. In the period, the temperature is set to be 160 degrees Celsius, which is the normal optimum temperature, so that the liquid temperature is prevented from lowering due to the introduction of the wafer, and the etching process is performed at the optimum temperature. Etching rate is fast, and from a different perspective,
The etching processing time can be configured to be short, and the etching selectivity between the nitride film to be etched and the oxide film as a protective film is increased, so that the nitride film is etched without etching the oxide film. The selection ratio can be obtained as desired.

In this case, as shown in FIG.
The temperature was lowered by about 2 degrees Celsius when the wafer was loaded after the preheating process, but the preheating process is not limited to this.
If the preheating process is performed so as to increase the temperature by 4 degrees Celsius, the temperature decreases by about 1 degree Celsius when the wafer is input, and if the preheating process is performed so that the temperature increases by 5 degrees Celsius, the temperature hardly decreases when the wafer is input. However, the higher the temperature of the liquid to be increased, the more the amount of evaporation increases, and the need for further replenishment of pure water is required. .

The operation of the above configuration will be described below. First, wet station 1 in the clean room
The operator places each carrier 3 on the first table in the wafer transfer unit 5 on the wafer loading side from the front direction. Thereafter, driving is started by a switch operation by the operator, and the plurality of wafers 2 are collectively transferred from the carrier 3 containing the plurality of wafers 2 to the transfer robot via the wafer transfer unit 5.

Next, the plurality of wafers 2 are transferred to the lifter device 22 by a transfer robot hand (not shown), and the plurality of wafers 2 are collectively collected by the lifter device 22 in the processing unit 7. The first and second chemical processing units 10,
11 is immersed in a phosphoric acid solution in each of the phosphoric acid treatment tanks 22 to perform an etching treatment.

The operation of the first and second chemical processing units 10 and 11 in the processing unit 7 will be described in detail below.

First, in the chemical solution circulating overflow step, the control means 30 controls the driving of the circulation pump 27 of the processing liquid circulating means 24 so that the phosphoric acid solution 21 is provided with a plurality of nozzle openings (a plurality of nozzle openings) of a pair of tubular processing liquid supply portions 26. Phosphating tank 2 (not shown)
The phosphoric acid solution 21 is supplied into the tank 2, and the phosphoric acid solution 21 rises in the tank and flows radially to the outer peripheral side thereof, and overflows into the overflow tank 25 from the upper opening 22 a on the upper outer periphery of the phosphoric acid treatment tank 22. , Overflow tank 2
From 5, the temperature is adjusted to a set temperature by a circulation pump 27 and a temperature controller 28, filtered by a filter 29, and then circulated again from the pair of tubular processing solution supply units 26 into the phosphating tank 22.

Next, after receiving a plurality of wafers 2 from a transfer robot (not shown) in a state of being raised with respect to the phosphoric acid treatment tank 22, the process proceeds to a wafer loading step. The control means 30 senses the diameters of the plurality of wafers 2 to be immersed by a sensor means (not shown) or the like, and counts the number of the wafers by a counter means (not shown) or the like, so that a plurality of wafers 2 to be immersed. Information on the diameter and the number of wafers 2 is obtained, the heat capacity of the input material including the wafers with the diameter and the number of wafers 2 is calculated, and the amount of current supplied to the temperature adjusting means 28 according to the calculated value is controlled. The liquid temperature is increased in advance before the wafer is charged so as to offset the decrease in the liquid temperature at the time.

Further, in the wafer loading step, the control means 30
Controls the lifter device 23, lowers the lifter device 23 to a predetermined lower position, and immerses the plurality of wafers 2 collectively in the phosphoric acid solution 21 in the phosphoric acid treatment tank 22. At this time,
The phosphoric acid solution 21 is continuously supplied to the plurality of wafers 2 from the pair of tubular processing liquid supply units 26 disposed on both sides of the bottom in the phosphoric acid treatment tank 22, and the upper open end 22a of the phosphoric acid treatment tank 22 The surface of the plurality of wafers 2 is etched with the phosphoric acid solution 21 while maintaining the state in which the phosphoric acid solution 21 overflows, and contaminants such as particles generated by this processing are transferred into the overflow tank 25 outside the tank. Let it overflow and pour out. Further, the phosphoric acid solution from the overflow tank 25 is maintained at a constant temperature by the temperature controller 28 from the circulating pump 27, and after the contaminants such as particles are filtered by the filter 29 and refreshed, a pair of the phosphoric acid solution is refreshed. Tubular processing liquid supply unit 26
From the phosphating tank 22 again.

Further, the control means 30 controls each part to maintain this state for a predetermined chemical solution processing time, and immerses a plurality of wafers 2 collectively in a phosphoric acid solution 21 of a predetermined concentration to perform a predetermined etching process. Do. Further, when the control unit 30 measures the chemical solution processing time by a timer unit (not shown), the control unit 30 shifts to the wafer 2 dispensing process.

In the step of dispensing the wafer 2, the control means 3
Numeral 0 controls the lifter device 23 so as to raise the plurality of wafers 2 together with the lifter device 23 to a predetermined upper position on the surface of the phosphoric acid solution 21. With the plurality of wafers 2 positioned on the phosphoric acid solution 21, the plurality of wafers 2 are delivered to a transfer robot (not shown) and transferred to the next step.

In this manner, the chemical processing in the first and second chemical processing units 10 and 11 is completed, the wafer 2 is functionally washed in the functional water washing unit 12, and the wafer 2 is further washed in the final water washing unit 13. After the wafer 2 is finally washed with water, the plurality of wafers 2 are spin-dried in the drying unit 8. As described above, the plurality of wafers 2 that have been subjected to the predetermined surface treatment and spin-dried are transferred into the carrier 4 of the wafer transfer unit 6 on the unloading side by the transfer robot (not shown) and collected. In the wafer transfer unit 6 on the unloading side, contrary to the case of the wafer transfer unit 5, the wafer is divided into two wafer groups into two transfer carriers 3 and transferred into the front and rear carriers 3 respectively. Will be. The operator may unload the two carriers 3 containing the processed wafers 2.

As described above, before the plurality of wafers 2 are immersed in the phosphoric acid solution 21 in the phosphoric acid treatment tank 22 by the lifter device 23, the amount of heat corresponding to the total heat capacity of the input member including the plurality of wafers 2 is previously determined. Since the control means 30 controls the amount of current supplied to the temperature controller 28 so as to increase the temperature of the processing solution, the temperature of the solution of the phosphoric acid solution 21 which decreases when the wafer 2 is charged can be greatly suppressed. A desired etching amount can be obtained even when the wafer 2 is loaded into the substrate 21.

When the processing solution is the phosphoric acid solution 21, the replenishment of pure water determines the concentration of the phosphoric acid solution 21, and the concentration of the phosphoric acid solution 21 greatly affects the etching rate. Since the temperature of the phosphoric acid solution 21, which is sometimes reduced, is greatly suppressed, it is not necessary to control the stoppage of the replenishment of the pure water, so that the concentration of the phosphoric acid solution 21 can be kept constant and the nitride film to be etched can be formed. It is possible to greatly suppress a decrease in the etching selectivity between the oxide film and the protective film.

It should be noted that the wet station 1 of the above embodiment is provided with the first and second chemical processing units 1 according to the present invention.
This is an example of a multi-tank type substrate processing apparatus to which 0 and 11 are applied, and the specific configuration thereof can be appropriately changed without departing from the gist of the present invention. For example, it can be applied not only to a multi-tank type substrate processing apparatus but also to a single-tank type substrate processing apparatus, in which the processing liquid is rapidly drained to eliminate the stagnation portion and return the processing liquid. It is not even. Further, in the processing unit 7 of the above embodiment, the tank configuration of the etching process for removing the nitride film has been described as a series of various types of chemical solution processes. It goes without saying that various chemical treatments such as a film etching treatment, a light etching treatment and a cleaning treatment before diffusion may be used.

[0038]

As described above, according to the first aspect of the present invention, since the temperature of the processing liquid is changed in advance by the amount of heat corresponding to the heat capacity of the entire substrate before immersion of the substrate, the processing temperature is reduced when the wafer is loaded. The temperature of the solution can be greatly suppressed, and the chemical solution can be processed at the optimum temperature, and a desired amount of processing such as an etching amount can be obtained even when the substrate is put into the processing solution.

According to the second aspect of the present invention, when the processing solution is a phosphoric acid solution as an etching solution, the replenishment of pure water determines the concentration of the phosphoric acid solution, and the concentration of the phosphoric acid solution is determined by the concentration of the etching solution. Although this greatly affects the rate, the temperature of the phosphoric acid solution, which drops when the wafer is charged, is greatly suppressed. Therefore, it is not necessary to control the stoppage of the replenishment of the pure water, and the phosphoric acid concentration can be kept constant, and A decrease in the etching selectivity between the film and the oxide film can be significantly suppressed, and a desired etching selectivity can be obtained.

[Brief description of the drawings]

FIG. 1 is a plan view showing a schematic configuration of a wet station incorporating a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic diagram showing a schematic configuration of a main part of a first chemical liquid processing unit in FIG. 1;

FIG. 3 is a view showing a state of a processing liquid temperature before and after a wafer is charged in a chemical liquid processing tank of FIG. 2;

FIG. 4 is a diagram showing a state of a processing solution concentration before and after a wafer is charged in a chemical solution processing tank of FIG. 2;

FIG. 5 is a diagram showing a state of a processing liquid temperature before and after a wafer is charged in a conventional chemical liquid processing tank.

FIG. 6 is a diagram showing a state of a processing solution concentration before and after a wafer is charged in a conventional chemical solution processing tank.

[Explanation of symbols]

 Reference Signs List 1 wet station 2 semiconductor wafer 7 processing unit 10 first chemical processing section 11 second chemical processing section 22 chemical processing tank 23 lifter device 23a arm member 24 processing liquid circulation means 26 processing liquid supply section 27 circulation pump 28 temperature adjustment means 30 control means

Claims (2)

[Claims] 1. A substrate processing apparatus for performing processing by immersing a substrate in a processing liquid supplied into a processing tank, wherein the substrate is immersed in the processing liquid. And a control means for controlling the temperature adjusting means so as to change the temperature of the processing liquid in advance by an amount of heat corresponding to the heat capacity of the entire substrate to be immersed. 2. A substrate processing apparatus for performing processing by immersing a substrate in a phosphoric acid solution supplied into a processing tank, wherein the processing solution circulation circulates the phosphoric acid solution overflowing from the processing tank back into the processing tank. The means is provided with a temperature adjusting means for adjusting the temperature of the circulating phosphoric acid solution,
Before immersing the substrate in the phosphoric acid solution, the control means for controlling the temperature adjusting means so as to change the temperature of the treatment liquid by an amount of heat corresponding to the heat capacity of the entire substrate to be immersed before the immersion of the substrate in the phosphoric acid solution A substrate processing apparatus provided.