JP6516908B2

JP6516908B2 - Etching processing control apparatus using phosphoric acid aqueous solution, etching processing control method using phosphoric acid aqueous solution, and computer readable storage medium storing program for etching substrate with phosphoric acid aqueous solution

Info

Publication number: JP6516908B2
Application number: JP2018126626A
Authority: JP
Inventors: 佐藤　秀明; 秀明佐藤; 尊三佐藤
Original assignee: Tokyo Electron Ltd
Current assignee: Tokyo Electron Ltd
Priority date: 2018-07-03
Filing date: 2018-07-03
Publication date: 2019-05-22
Anticipated expiration: 2035-01-30
Also published as: JP2018148245A

Description

本発明は、基板を処理するエッチング液中のシリコン濃度を計測する処理制御装置及び処理制御方法並びに処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体に関するものである。 The present invention relates to a process control device and process control method for measuring the concentration of silicon in an etching solution for processing a substrate, and a computer readable storage medium storing a process program.

半導体部品やフラットパネルディスプレイなどの製造には、半導体ウエハや液晶基板などの基板に対してエッチング液（処理液）でエッチング処理する基板液処理装置が用いられている。 In the manufacture of semiconductor components and flat panel displays, a substrate liquid processing apparatus is used in which a substrate such as a semiconductor wafer or a liquid crystal substrate is etched with an etching liquid (processing liquid).

従来の基板液処理装置は、基板を処理するための処理液を貯留する処理液貯留部と、処理液貯留部に処理液を供給する処理液供給部と、処理液貯留部で貯留した処理液を循環させて処理液の加熱等を行う処理液循環部とを有している。 The conventional substrate liquid processing apparatus includes a processing liquid storage unit for storing a processing liquid for processing a substrate, a processing liquid supply unit for supplying a processing liquid to the processing liquid storage unit, and a processing liquid stored in the processing liquid storage unit. And a treatment liquid circulation unit for heating the treatment liquid and the like.

そして、基板液処理装置は、処理液貯留部に貯留した処理液に複数枚の基板を浸漬させて基板を処理液で液処理する（たとえば、特許文献１参照。）。 Then, the substrate liquid processing apparatus immerses a plurality of substrates in the processing liquid stored in the processing liquid storage unit and performs liquid processing on the substrate with the processing liquid (for example, see Patent Document 1).

特開２００１−２３９５２号公報JP 2001-23952

ところが、上記従来の基板液処理装置では、処理液で基板を繰返し処理すると、基板の処理によって処理液に含有される不純物等の濃度が増加してしまい、基板を良好に処理することができなくなる。たとえば、基板をリン酸水溶液（エッチング液）でエッチング処理する場合には、処理液の能力（エッチングレート）が処理液中のシリコン濃度に依存するために処理液中のシリコン濃度を一定範囲内に保持する必要があるが、基板の処理を繰り返すことでエッチング液中のシリコン濃度が増加し、処理液の能力が低下して基板を良好にエッチング処理することができなくなる。 However, in the conventional substrate liquid processing apparatus, when the substrate is repeatedly processed with the processing liquid, the concentration of impurities contained in the processing liquid is increased by the processing of the substrate, and the substrate can not be processed favorably. . For example, when the substrate is etched with a phosphoric acid aqueous solution (etching solution), the silicon concentration in the processing solution is within a certain range because the processing solution capacity (etching rate) depends on the silicon concentration in the processing solution. Although it is necessary to hold the substrate, by repeating the treatment of the substrate, the concentration of silicon in the etching solution is increased, the ability of the treatment solution is lowered, and the substrate can not be etched well.

そこで、本発明では、基板を処理槽でエッチング処理するエッチング液を処理液循環部で循環し、所定のタイミングで濃度センサでシリコン濃度を計測し、処理液排出部からエッチング液を排出するとともに、処理液供給部からリン酸水溶液を前記処理槽に供給し、前記リン酸水溶液を加熱し、その後、前記処理液循環部でのエッチング液の循環を停止し、ダミーのシリコンウエハを前記エッチング液に浸漬させてシリコン濃度を所定濃度とすることにした。
Therefore, in the present invention, the etching solution for etching the substrate in the treatment tank is circulated in the treatment solution circulation unit, the silicon concentration is measured by the concentration sensor at a predetermined timing, and the etching solution is discharged from the treatment solution discharge unit. A phosphoric acid aqueous solution is supplied to the processing tank from the processing liquid supply unit, and the phosphoric acid aqueous solution is heated . Thereafter, circulation of the etching liquid in the processing liquid circulation unit is stopped, and a dummy silicon wafer is used as the etching liquid. It was made to immerse and to make silicon concentration into predetermined concentration .

本発明では、前記濃度センサで計測した前記エッチング液のシリコン濃度が所定濃度範囲となるまで前記処理液供給部からリン酸水溶液を供給するとともに前記処理液排出部から前記エッチング液を排出することにしてもよい。 In the present invention, while the aqueous solution of phosphoric acid is supplied from the processing solution supply unit until the silicon concentration of the etching solution measured by the concentration sensor falls within the predetermined concentration range, the etching solution is discharged from the processing solution discharge unit. May be

また、前記処理液排出部からのエッチング液の排出量と前記処理液供給部からのリン酸水溶液の供給量とシリコン濃度との関係を予め求めておき、シリコン濃度が所定濃度範囲となるように所定量のエッチング液を排出するとともに所定量のリン酸水溶液を供給することにしてもよい。 Further, the relationship between the discharge amount of the etching solution from the treatment solution discharge unit, the supply amount of the phosphoric acid aqueous solution from the treatment solution supply unit, and the silicon concentration is obtained in advance, so that the silicon concentration becomes a predetermined concentration range. The predetermined amount of etching solution may be discharged and the predetermined amount of phosphoric acid aqueous solution may be supplied.

また、前記濃度センサでシリコン濃度を複数回計測してシリコン濃度の上昇率を求め、シリコン濃度が所定濃度範囲を超えると判断した場合に、シリコン濃度が所定濃度範囲を超えないように前記エッチング液の排出量と前記リン酸水溶液の供給量を補正することにしてもよい。 Further, the silicon concentration is measured a plurality of times by the concentration sensor to obtain an increase rate of the silicon concentration, and when it is determined that the silicon concentration exceeds the predetermined concentration range, the etching solution is performed so that the silicon concentration does not exceed the predetermined concentration range. And the amount of the aqueous phosphoric acid solution supplied may be corrected.

また、シリコン濃度が所定濃度範囲内でない場合に、前記処理槽への前記基板の搬入を中断することにしてもよい。 Further, when the silicon concentration is not within the predetermined concentration range, the loading of the substrate into the processing tank may be interrupted.

さらに、前記処理液供給部から前記エッチング液よりも低い濃度のリン酸水溶液を供給させ、ヒーターで加熱して前記エッチング液とすることにしてもよい。 Furthermore, a phosphoric acid aqueous solution having a concentration lower than that of the etching solution may be supplied from the processing solution supply unit and heated by a heater to obtain the etching solution.

本発明では、基板を良好にエッチング処理することができる。 In the present invention, the substrate can be etched well.

基板液処理装置を示す平面説明図。Plane | planar explanatory drawing which shows a substrate liquid processing apparatus. エッチング処理装置を示す説明図。Explanatory drawing which shows an etching processing apparatus. 処理液排出部を示す説明図。Explanatory drawing which shows a process liquid discharge part. 基板液処理方法を示す説明図。Explanatory drawing which shows a substrate liquid processing method. 基板液処理方法を示す説明図。Explanatory drawing which shows a substrate liquid processing method.

以下に、本発明に係る基板液処理装置及び基板液処理方法並びに基板液処理プログラムの具体的な構成について図面を参照しながら説明する。 Hereinafter, specific configurations of a substrate liquid processing apparatus, a substrate liquid processing method, and a substrate liquid processing program according to the present invention will be described with reference to the drawings.

図１に示すように、基板液処理装置１は、キャリア搬入出部２、ロット形成部３、ロット載置部４、ロット搬送部５、ロット処理部６、制御部７を有する。 As shown in FIG. 1, the substrate liquid processing apparatus 1 has a carrier loading / unloading unit 2, a lot formation unit 3, a lot placement unit 4, a lot conveyance unit 5, a lot processing unit 6, and a control unit 7.

キャリア搬入出部２は、複数枚（たとえば、25枚）の基板（シリコンウエハ）８を水平姿勢で上下に並べて収容したキャリア９の搬入及び搬出を行う。 The carrier loading / unloading unit 2 carries in / outs the carrier 9 in which a plurality of (for example, 25) substrates (silicon wafers) 8 are vertically arranged in a horizontal posture.

このキャリア搬入出部２には、複数個のキャリア９を載置するキャリアステージ10と、キャリア９の搬送を行うキャリア搬送機構11と、キャリア９を一時的に保管するキャリアストック12,13と、キャリア９を載置するキャリア載置台14とが設けられている。ここで、キャリアストック12は、製品となる基板８をロット処理部６で処理する前に一時的に保管する。また、キャリアストック13は、製品となる基板８をロット処理部６で処理した後に一時的に保管する。 The carrier loading / unloading unit 2 includes a carrier stage 10 on which a plurality of carriers 9 are placed, a carrier transport mechanism 11 for transporting the carriers 9, and carrier stocks 12 and 13 for temporarily storing the carriers 9. A carrier mounting table 14 on which the carrier 9 is mounted is provided. Here, the carrier stock 12 temporarily stores the product substrate 8 before being processed by the lot processing unit 6. Further, the carrier stock 13 is temporarily stored after processing the substrate 8 as a product in the lot processing unit 6.

そして、キャリア搬入出部２は、外部からキャリアステージ10に搬入されたキャリア９をキャリア搬送機構11を用いてキャリアストック12やキャリア載置台14に搬送する。また、キャリア搬入出部２は、キャリア載置台14に載置されたキャリア９をキャリア搬送機構11を用いてキャリアストック13やキャリアステージ10に搬送する。キャリアステージ10に搬送されたキャリア９は、外部へ搬出される。 Then, the carrier loading / unloading unit 2 transports the carrier 9 loaded onto the carrier stage 10 from the outside to the carrier stock 12 or the carrier mounting table 14 using the carrier transport mechanism 11. Further, the carrier loading / unloading unit 2 transports the carrier 9 mounted on the carrier mounting table 14 to the carrier stock 13 or the carrier stage 10 using the carrier transport mechanism 11. The carrier 9 transported to the carrier stage 10 is carried out to the outside.

ロット形成部３は、１又は複数のキャリア９に収容された基板８を組合せて同時に処理される複数枚（たとえば、50枚）の基板８からなるロットを形成する。 The lot formation unit 3 forms a lot consisting of a plurality of (for example, 50) substrates 8 simultaneously processed by combining the substrates 8 accommodated in one or a plurality of carriers 9.

このロット形成部３には、複数枚の基板８を搬送する基板搬送機構15が設けられている。なお、基板搬送機構15は、基板８の搬送途中で基板８の姿勢を水平姿勢から垂直姿勢及び垂直姿勢から水平姿勢に変更させることができる。 The lot forming unit 3 is provided with a substrate transfer mechanism 15 for transferring a plurality of substrates 8. The substrate transport mechanism 15 can change the posture of the substrate 8 from the horizontal posture to the vertical posture and the vertical posture to the horizontal posture during the conveyance of the substrate 8.

そして、ロット形成部３は、キャリア載置台14に載置されたキャリア９から基板搬送機構15を用いて基板８をロット載置部４に搬送し、ロット載置部４でロットを形成する。また、ロット形成部３は、ロット載置部４に載置されたロットを基板搬送機構15でキャリア載置台14に載置されたキャリア９へ搬送する。なお、基板搬送機構15は、複数枚の基板８を支持するための基板支持部として、処理前（ロット搬送部５で搬送される前）の基板８を支持する処理前基板支持部と、処理後（ロット搬送部５で搬送された後）の基板８を支持する処理後基板支持部の２種類を有している。これにより、処理前の基板８等に付着したパーティクル等が処理後の基板８等に転着するのを防止する。 Then, the lot formation unit 3 conveys the substrate 8 from the carrier 9 placed on the carrier placement table 14 to the lot placement unit 4 using the substrate transfer mechanism 15 and forms a lot in the lot placement unit 4. In addition, the lot formation unit 3 transports the lot placed on the lot placement unit 4 to the carrier 9 placed on the carrier placement table 14 by the substrate transfer mechanism 15. The substrate transfer mechanism 15 serves as a substrate support unit for supporting a plurality of substrates 8 and includes a pre-processing substrate support unit that supports the substrate 8 before processing (before being transported by the lot transport unit 5), and There are two types of post-processing substrate supporting portions for supporting the substrate 8 after (after being transported by the lot transport unit 5). This prevents particles and the like adhering to the substrate 8 and the like before processing from being transferred to the substrate 8 and the like after processing.

ロット載置部４は、ロット搬送部５によってロット形成部３とロット処理部６との間で搬送されるロットをロット載置台16で一時的に載置（待機）する。 The lot placement unit 4 temporarily places (waits) the lot conveyed by the lot conveyance unit 5 between the lot formation unit 3 and the lot processing unit 6 on the lot placement table 16.

このロット載置部４には、処理前（ロット搬送部５で搬送される前）のロットを載置する搬入側ロット載置台17と、処理後（ロット搬送部５で搬送された後）のロットを載置する搬出側ロット載置台18とが設けられている。搬入側ロット載置台17及び搬出側ロット載置台18には、１ロット分の複数枚の基板８が垂直姿勢で前後に並べて載置される。 The lot placement unit 4 includes a loading side lot placement table 17 for placing a lot before processing (before being transported by the lot transport unit 5) and after processing (after being transported by the lot transport unit 5). A delivery side lot placement table 18 for placing a lot is provided. A plurality of substrates 8 for one lot are placed on the loading-side lot placement table 17 and the unloading-side lot placement table 18 in a vertical posture in the front-rear direction.

そして、ロット載置部４では、ロット形成部３で形成したロットが搬入側ロット載置台17に載置され、そのロットがロット搬送部５を介してロット処理部６に搬入される。また、ロット載置部４では、ロット処理部６からロット搬送部５を介して搬出されたロットが搬出側ロット載置台18に載置され、そのロットがロット形成部３に搬送される。 Then, in the lot placement unit 4, the lot formed by the lot formation unit 3 is placed on the loading-side lot placement table 17, and the lot is carried into the lot processing unit 6 via the lot conveyance unit 5. In the lot placement unit 4, the lot unloaded from the lot processing unit 6 via the lot transport unit 5 is placed on the unloading side lot placement table 18, and the lot is transported to the lot formation unit 3.

ロット搬送部５は、ロット載置部４とロット処理部６との間やロット処理部６の内部間でロットの搬送を行う。 The lot transfer unit 5 transfers lots between the lot placement unit 4 and the lot processing unit 6 and between the lot processing unit 6.

このロット搬送部５には、ロットの搬送を行うロット搬送機構19が設けられている。ロット搬送機構19は、ロット載置部４とロット処理部６に沿わせて配置したレール20と、複数枚の基板８を保持しながらレール20に沿って移動する移動体21とで構成する。移動体21には、垂直姿勢で前後に並んだ複数枚の基板８を保持する基板保持体22が進退自在に設けられている。 The lot transfer unit 5 is provided with a lot transfer mechanism 19 for transferring a lot. The lot transfer mechanism 19 includes a rail 20 disposed along the lot placement unit 4 and the lot processing unit 6 and a movable body 21 moving along the rail 20 while holding a plurality of substrates 8. The movable body 21 is provided with a substrate holder 22 which holds a plurality of substrates 8 lined up in front and back in a vertical posture so as to freely advance and retract.

そして、ロット搬送部５は、搬入側ロット載置台17に載置されたロットをロット搬送機構19の基板保持体22で受取り、そのロットをロット処理部６に受渡す。また、ロット搬送部５は、ロット処理部６で処理されたロットをロット搬送機構19の基板保持体22で受取り、そのロットを搬出側ロット載置台18に受渡す。さらに、ロット搬送部５は、ロット搬送機構19を用いてロット処理部６の内部においてロットの搬送を行う。 Then, the lot transfer unit 5 receives the lot placed on the loading-side lot mounting table 17 by the substrate holder 22 of the lot transfer mechanism 19 and transfers the lot to the lot processing unit 6. Further, the lot transfer unit 5 receives the lot processed by the lot processing unit 6 by the substrate holder 22 of the lot transfer mechanism 19 and transfers the lot to the unloading side lot mounting table 18. Further, the lot transfer unit 5 transfers the lot inside the lot processing unit 6 using the lot transfer mechanism 19.

ロット処理部６は、垂直姿勢で前後に並んだ複数枚の基板８を１ロットとしてエッチングや洗浄や乾燥などの処理を行う。 The lot processing unit 6 performs processing such as etching, cleaning, drying, etc., with a plurality of substrates 8 lined back and forth in vertical posture as one lot.

このロット処理部６には、基板８の乾燥処理を行う乾燥処理装置23と、基板保持体22の洗浄処理を行う基板保持体洗浄処理装置24と、基板８の洗浄処理を行う洗浄処理装置25と、基板８のエッチング処理を行う２台のエッチング処理装置26とが並べて設けられている。 The lot processing unit 6 includes a drying processing unit 23 for drying the substrate 8, a substrate holding body cleaning processing unit 24 for cleaning the substrate holding body 22, and a cleaning processing unit 25 for cleaning the substrate 8. And two etching processing apparatuses 26 for performing the etching processing of the substrate 8 are provided side by side.

乾燥処理装置23は、処理槽27に基板昇降機構28を昇降自在に設けている。処理槽27には、乾燥用の処理ガス（ＩＰＡ（イソプロピルアルコール）等）が供給される。基板昇降機構28には、１ロット分の複数枚の基板８が垂直姿勢で前後に並べて保持される。乾燥処理装置23は、ロット搬送機構19の基板保持体22からロットを基板昇降機構28で受取り、基板昇降機構28でそのロットを昇降させることで、処理槽27に供給した乾燥用の処理ガスで基板８の乾燥処理を行う。また、乾燥処理装置23は、基板昇降機構28からロット搬送機構19の基板保持体22にロットを受渡す。 The drying processing device 23 is provided with a substrate lifting mechanism 28 in the processing tank 27 so as to be able to move up and down. A processing gas for drying (IPA (isopropyl alcohol) or the like) is supplied to the processing tank 27. The substrate lifting mechanism 28 holds a plurality of substrates 8 for one lot side by side in the vertical posture. The drying processing apparatus 23 receives a lot from the substrate holder 22 of the lot transfer mechanism 19 by the substrate lifting mechanism 28 and lifts the lot by the substrate lifting mechanism 28 so that the drying processing gas supplied to the processing tank 27 is used. The substrate 8 is dried. In addition, the drying processing device 23 delivers the lot from the substrate lifting mechanism 28 to the substrate holder 22 of the lot transfer mechanism 19.

基板保持体洗浄処理装置24は、処理槽29に洗浄用の処理液及び乾燥ガスを供給できるようになっており、ロット搬送機構19の基板保持体22に洗浄用の処理液を供給した後、乾燥ガスを供給することで基板保持体22の洗浄処理を行う。 The substrate holder cleaning processing apparatus 24 can supply the processing liquid for cleaning and the drying gas to the processing tank 29, and after supplying the processing liquid for cleaning to the substrate holder 22 of the lot transport mechanism 19, By supplying the drying gas, the substrate holder 22 is cleaned.

洗浄処理装置25は、洗浄用の処理槽30とリンス用の処理槽31とを有し、各処理槽30，31に基板昇降機構32,33を昇降自在に設けている。洗浄用の処理槽30には、洗浄用の処理液（ＳＣ−１等）が貯留される。リンス用の処理槽31には、リンス用の処理液（純水等）が貯留される。 The cleaning processing apparatus 25 has a processing tank 30 for cleaning and a processing tank 31 for rinsing, and substrate lift mechanisms 32 and 33 are provided in the processing tanks 30 and 31 so as to be able to move up and down. In the processing tank 30 for cleaning, processing liquid (SC-1 etc.) for cleaning is stored. A treatment liquid (such as pure water) for rinse is stored in the treatment tank 31 for rinse.

エッチング処理装置26は、エッチング用の処理槽34とリンス用の処理槽35とを有し、各処理槽34,35に基板昇降機構36，37を昇降自在に設けている。エッチング用の処理槽34には、エッチング用の処理液（リン酸水溶液）が貯留される。リンス用の処理槽35には、リンス用の処理液（純水等）が貯留される。 The etching processing apparatus 26 has a processing bath 34 for etching and a processing bath 35 for rinsing, and substrate lift mechanisms 36 and 37 are provided in the processing baths 34 and 35 so as to be able to move up and down. A processing solution for etching (phosphoric acid aqueous solution) is stored in the processing tank 34 for etching. The rinse treatment liquid (such as pure water) is stored in the rinse treatment tank 35.

これら洗浄処理装置25とエッチング処理装置26は、同様の構成となっている。エッチング処理装置26について説明すると、基板昇降機構36,37には、１ロット分の複数枚の基板８が垂直姿勢で前後に並べて保持される。エッチング処理装置26は、ロット搬送機構19の基板保持体22からロットを基板昇降機構36で受取り、基板昇降機構36でそのロットを昇降させることでロットを処理槽34のエッチング用の処理液に浸漬させて基板８のエッチング処理を行う。その後、エッチング処理装置26は、基板昇降機構36からロット搬送機構19の基板保持体22にロットを受渡す。また、エッチング処理装置26は、ロット搬送機構19の基板保持体22からロットを基板昇降機構37で受取り、基板昇降機構37でそのロットを昇降させることでロットを処理槽35のリンス用の処理液に浸漬させて基板８のリンス処理を行う。その後、エッチング処理装置26は、基板昇降機構37からロット搬送機構19の基板保持体22にロットを受渡す。 The cleaning processing unit 25 and the etching processing unit 26 have the same configuration. When the etching processing apparatus 26 is described, a plurality of substrates 8 for one lot are vertically arranged and held side by side by the substrate lifting mechanisms 36 and 37. The etching processing apparatus 26 receives a lot from the substrate holder 22 of the lot transfer mechanism 19 by the substrate lifting mechanism 36 and raises and lowers the lot by the substrate lifting mechanism 36 to immerse the lot in the processing solution for the processing tank 34. Then, the substrate 8 is etched. Thereafter, the etching processing apparatus 26 delivers the lot from the substrate lifting mechanism 36 to the substrate holder 22 of the lot transfer mechanism 19. In addition, the etching processing apparatus 26 receives a lot from the substrate holder 22 of the lot transfer mechanism 19 by the substrate lifting mechanism 37 and raises and lowers the lot by the substrate lifting mechanism 37 to process the lot for the treatment bath for rinsing the treatment tank 35 And the substrate 8 is rinsed. Thereafter, the etching processing apparatus 26 delivers the lot from the substrate lifting mechanism 37 to the substrate holder 22 of the lot transfer mechanism 19.

このエッチング処理装置26では、所定濃度の薬剤（リン酸）の水溶液（88.3重量％のリン酸水溶液）を処理液（エッチング液）として用いて基板８を液処理（エッチング処理）する。 In this etching processing apparatus 26, the substrate 8 is subjected to liquid processing (etching processing) using an aqueous solution (88.3% by weight of phosphoric acid aqueous solution) of a chemical (phosphoric acid) having a predetermined concentration as a processing liquid (etching liquid).

エッチング処理装置26は、図２に示すように、所定濃度のリン酸水溶液（88.3重量％のリン酸水溶液）からなる処理液を貯留するとともに基板８を処理するための処理液貯留部38と、処理液貯留部38に処理液を供給するための処理液供給部39と、処理液貯留部38に貯留された処理液を循環させるための処理液循環部40と、処理液貯留部38から処理液を排出する処理液排出部41とを有する。 As shown in FIG. 2, the etching processing apparatus 26 stores a processing solution consisting of a phosphoric acid aqueous solution (88.3% by weight phosphoric acid aqueous solution) having a predetermined concentration and a processing solution storage unit 38 for processing the substrate 8. A treatment liquid supply unit 39 for supplying the treatment liquid to the treatment liquid storage unit 38, a treatment liquid circulation unit 40 for circulating the treatment liquid stored in the treatment liquid storage unit 38, and a process from the treatment liquid storage unit 38 And a processing liquid discharge unit 41 for discharging the liquid.

処理液貯留部38は、上部を開放させた処理槽34の上部周囲に上部を開放させた外槽42を形成し、処理槽34と外槽42に処理液を貯留する。処理槽34では、基板８を基板昇降機構36によって浸漬させることで液処理する処理液を貯留する。外槽42では、処理槽34からオーバーフローした処理液を貯留するとともに、処理液循環部40によって処理槽34に処理液を供給する。 The treatment liquid storage unit 38 forms an outer tank 42 having an open upper part around the upper part of the treatment tank 34 having an open upper part, and stores the treatment liquid in the treatment tank 34 and the outer tank 42. In the processing tank 34, the substrate 8 is immersed by the substrate lifting mechanism 36 to store the processing liquid to be processed. In the outer tank 42, the treatment liquid overflowing from the treatment tank 34 is stored, and the treatment liquid circulation unit 40 supplies the treatment liquid to the treatment tank 34.

処理液供給部39は、処理液貯留部38に処理液とは異なる濃度（処理液よりも低い濃度）の薬剤（リン酸）の水溶液（85重量％のリン酸水溶液）を供給するための水溶液供給部43と、処理液貯留部38に水（純水）を供給するための水供給部44とで構成されている。 The treatment liquid supply unit 39 is an aqueous solution for supplying to the treatment liquid storage unit 38 an aqueous solution (85 wt% phosphoric acid aqueous solution) of a drug (phosphoric acid) having a different concentration (lower concentration than the treatment liquid) from the treatment liquid. A supply unit 43 and a water supply unit 44 for supplying water (pure water) to the treatment liquid storage unit 38 are provided.

水溶液供給部43は、所定濃度（８５重量％）及び所定温度（25℃）のリン酸水溶液を供給するための水溶液供給源45を処理液貯留部38の外槽42に流量調整器46を介して接続する。流量調整器46は、制御部７に接続されており、制御部７で開閉制御及び流量制御される。 The aqueous solution supply unit 43 supplies the aqueous solution supply source 45 for supplying a phosphoric acid aqueous solution having a predetermined concentration (85% by weight) and a predetermined temperature (25 ° C.) to the outer tank 42 of the treatment liquid storage unit 38 via a flow rate adjuster 46. Connect. The flow rate regulator 46 is connected to the control unit 7, and the control unit 7 performs open / close control and flow control.

水供給部44は、所定温度（25℃）の純水を供給するための水供給源47を処理液貯留部38の外槽42に流量調整器48を介して接続する。流量調整器48は、制御部７に接続されており、制御部７で開閉制御及び流量制御される。 The water supply unit 44 connects a water supply source 47 for supplying pure water at a predetermined temperature (25 ° C.) to the outer tank 42 of the treatment liquid storage unit 38 via the flow rate adjuster 48. The flow rate regulator 48 is connected to the control unit 7, and the control unit 7 performs open / close control and flow control.

処理液循環部40は、処理液貯留部38の外槽42の底部と処理槽34の底部との間に循環流路49を形成する。循環流路49には、ポンプ50、ヒーター51、フィルター52が順に設けられている。ポンプ50及びヒーター51は、制御部７に接続されており、制御部７で駆動制御される。そして、処理液循環部40は、ポンプ50を駆動させることで外槽42から処理槽34に処理液を循環させる。その際に、ヒーター51で処理液を所定温度（165℃）に加熱する。 The treatment liquid circulation unit 40 forms a circulation channel 49 between the bottom of the outer tank 42 of the treatment liquid storage unit 38 and the bottom of the treatment tank 34. A pump 50, a heater 51, and a filter 52 are provided in the circulation channel 49 in order. The pump 50 and the heater 51 are connected to the control unit 7 and drive-controlled by the control unit 7. Then, the treatment liquid circulating unit 40 circulates the treatment liquid from the outer tank 42 to the treatment tank 34 by driving the pump 50. At that time, the processing solution is heated to a predetermined temperature (165 ° C.) by the heater 51.

処理液排出部41は、処理液貯留部38から処理液を排出する第１の処理液排出部53と、処理液循環部40から処理液を排出する第２の処理液排出部54とで構成されている。 The treatment liquid discharge unit 41 is configured of a first treatment liquid discharge unit 53 that discharges the treatment liquid from the treatment liquid storage unit 38 and a second treatment liquid discharge unit 54 that discharges the treatment liquid from the treatment liquid circulation unit 40. It is done.

第１の処理液排出部53は、処理液貯留部38の処理槽34の底部に外部の排液管と連通する排出流路55を接続し、排出流路55に開閉弁56を設けている。開閉弁56は、制御部７に接続されており、制御部７で開閉制御される。 The first processing liquid discharge unit 53 connects a discharge flow channel 55 communicating with an external liquid discharge pipe to the bottom of the processing tank 34 of the processing liquid storage unit 38, and the discharge flow channel 55 is provided with an on-off valve 56. . The on-off valve 56 is connected to the control unit 7 and is controlled to open and close by the control unit 7.

第２の処理液排出部54は、処理液循環部40の循環流路49の中途部（ヒーター51とフィルター52の間）に外部の排液管と連通する排出流路57を接続し、排出流路57に開閉弁58を設けている。さらに、排出流路57の中途部（開閉弁58の下流側）に外部の排液管と連通するバイパス流路59を接続し、バイパス流路59に開閉弁60と処理液中のシリコン濃度を計測するための濃度センサ61を順に設けている。開閉弁58,60は、制御部７に接続されており、制御部７で開閉制御される。濃度センサ61は、制御部７に接続されており、制御部７によって処理液中のシリコン濃度が計測される。 The second processing liquid discharge unit 54 connects the discharge flow path 57 communicating with the external drainage pipe to the middle part (between the heater 51 and the filter 52) of the circulation flow path 49 of the processing liquid circulation unit 40 and discharges it. An open / close valve 58 is provided in the flow path 57. Furthermore, a bypass flow passage 59 communicating with an external drainage pipe is connected to the middle part of the discharge flow passage 57 (downstream of the on-off valve 58), and the on-off valve 60 and the silicon concentration in the processing liquid are A density sensor 61 for measuring is provided in order. The on-off valves 58 and 60 are connected to the control unit 7 and are controlled to open and close by the control unit 7. The concentration sensor 61 is connected to the control unit 7, and the control unit 7 measures the silicon concentration in the processing liquid.

このように、基板液処理装置１では、濃度センサ61を処理液循環部40から分岐した第２の処理液排出部54に設けているために、処理液循環部40から処理液を排出する時だけ濃度センサ61に処理液が接液するようにしている。これにより、基板液処理装置１では、処理液によって濃度センサ61が浸食されたり処理液に含有された不純物が濃度センサ61に付着することによって濃度センサ61が故障や誤作動してしまうのを防止することができる。また、基板液処理装置１では、濃度センサ61から析出等した塵が処理液に混入することで基板８にパーティクルが付着して基板８を良好に液処理できなくなるのを防止することができる。 As described above, in the substrate liquid processing apparatus 1, when the concentration sensor 61 is provided in the second processing liquid discharge unit 54 branched from the processing liquid circulation unit 40, when the processing liquid is discharged from the processing liquid circulation unit 40. The processing solution is brought into contact with the concentration sensor 61 only. Thereby, in the substrate liquid processing apparatus 1, the concentration sensor 61 is prevented from being broken or malfunctioning due to the concentration sensor 61 being eroded by the treatment liquid and impurities contained in the treatment liquid being attached to the concentration sensor 61. can do. Further, in the substrate liquid processing apparatus 1, it is possible to prevent particles that are deposited on the concentration sensor 61 from being mixed in the processing liquid and causing particles to adhere to the substrate 8 so that the substrate 8 can not be liquid processed well.

ここで、濃度センサ61は、図２及び図３（ａ）に示すように排出流路57から分岐したバイパス流路59に設けた場合に限られず、図３（ｂ）に示すように循環流路49から分岐したバイパス流路62に設けてもよく、図３（ｃ）に示すように排出流路57に設けてもよい。濃度センサ61を排出流路57に設けた場合には、処理液貯留部38で貯留される処理液の一部（処理液循環部40から排出される処理液）だけが濃度センサ61に接液することになり、濃度センサ61をバイパス流路59,62に設けた場合には、さらに処理液循環部40から排出される処理液の一部（バイパス流路59,62から排出される処理液）だけが濃度センサ61に接液することになる。そのため、濃度センサ61をバイパス流路59,62に設けることで、濃度センサ61に処理液が接液する時間（頻度）をより一層短く（少なく）することができる。 Here, the concentration sensor 61 is not limited to the case where it is provided in the bypass passage 59 branched from the discharge passage 57 as shown in FIGS. 2 and 3A, and as shown in FIG. It may be provided in the bypass flow passage 62 branched from the passage 49, or may be provided in the discharge flow passage 57 as shown in FIG. 3 (c). When the concentration sensor 61 is provided in the discharge flow path 57, only a part of the treatment liquid stored in the treatment liquid storage unit 38 (the treatment liquid discharged from the treatment liquid circulation unit 40) contacts the concentration sensor 61. In the case where the concentration sensor 61 is provided in the bypass flow channels 59 and 62, a portion of the processing liquid discharged from the processing liquid circulation unit 40 (the processing liquid discharged from the bypass flow channels 59 and 62) Only) is in contact with the concentration sensor 61. Therefore, by providing the concentration sensor 61 in the bypass flow channels 59 and 62, the time (frequency) in which the treatment liquid contacts the concentration sensor 61 can be further shortened (decreased).

エッチング処理装置26は、水溶液供給部43によって所定濃度（85重量％）及び所定温度（25℃）のリン酸水溶液を処理液貯留部38に供給し、処理液循環部40によって所定濃度（88.3重量％）及び所定温度（165℃）になるように加熱して処理液を生成し、処理液を処理液貯留部38に貯留する。また、エッチング処理装置26は、加熱によって蒸発する水の量に相応する量の純水を水供給部44によって処理液貯留部38に供給する。これにより、エッチング処理装置26は、処理液貯留部38の処理槽34に所定濃度（88.3重量％）及び所定温度（165℃）の処理液を貯留し、その処理液に基板昇降機構36によって基板８を浸漬させることで、基板８をエッチング処理する。 The etching processing apparatus 26 supplies a phosphoric acid aqueous solution having a predetermined concentration (85% by weight) and a predetermined temperature (25 ° C.) by the aqueous solution supply unit 43 to the treatment liquid storage unit 38, and the treatment liquid circulation unit 40 measures the predetermined concentration (88.3 weight) %) And a predetermined temperature (165.degree. C.) to generate the treatment liquid, and the treatment liquid is stored in the treatment liquid reservoir 38. In addition, the etching processing apparatus 26 supplies pure water in an amount corresponding to the amount of water evaporated by heating to the treatment liquid storage unit 38 by the water supply unit 44. Thus, the etching processing apparatus 26 stores the processing solution of a predetermined concentration (88.3% by weight) and a predetermined temperature (165 ° C.) in the processing tank 34 of the processing liquid storage unit 38, and the substrate lifting mechanism 36 The substrate 8 is etched by immersing the substrate 8.

また、エッチング処理装置26は、処理液排出部41によって処理液貯留部38の処理液の一部（又は全部）を排出するとともに、処理液供給部39によって新規に処理液（水溶液又は／及び純水）を供給して、処理液貯留部38に貯留する処理液を適宜更新（交換）する。 In addition, the etching processing apparatus 26 discharges a part (or all) of the processing liquid of the processing liquid storage part 38 by the processing liquid discharge part 41, and the processing liquid supply part 39 newly treats the processing liquid (aqueous solution or / and pure). Water) is supplied, and the processing liquid stored in the processing liquid storage unit 38 is appropriately updated (replaced).

制御部７は、基板液処理装置１の各部（キャリア搬入出部２、ロット形成部３、ロット載置部４、ロット搬送部５、ロット処理部６など）の動作を制御する。 The control unit 7 controls the operation of each unit (the carrier loading / unloading unit 2, the lot formation unit 3, the lot placement unit 4, the lot conveyance unit 5, the lot processing unit 6, etc.) of the substrate liquid processing apparatus 1.

この制御部７は、たとえばコンピュータであり、コンピュータで読み取り可能な記憶媒体63を備える。記憶媒体63には、基板液処理装置１において実行される各種の処理を制御するプログラムが格納される。制御部７は、記憶媒体63に記憶されたプログラムを読み出して実行することによって基板液処理装置１の動作を制御する。なお、プログラムは、コンピュータによって読み取り可能な記憶媒体63に記憶されていたものであって、他の記憶媒体から制御部７の記憶媒体63にインストールされたものであってもよい。コンピュータによって読み取り可能な記憶媒体63としては、たとえばハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディスク（ＣＤ）、マグネットオプティカルディスク（ＭＯ）、メモリカードなどがある。 The control unit 7 is, for example, a computer, and includes a computer readable storage medium 63. The storage medium 63 stores a program for controlling various processes performed in the substrate liquid processing apparatus 1. The control unit 7 controls the operation of the substrate liquid processing apparatus 1 by reading and executing the program stored in the storage medium 63. The program may be stored in a storage medium 63 readable by a computer, and may be installed in the storage medium 63 of the control unit 7 from another storage medium. Examples of the computer-readable storage medium 63 include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), a memory card, and the like.

基板液処理装置１は、以上に説明したように構成しており、制御部７で各部（キャリア搬入出部２、ロット形成部３、ロット載置部４、ロット搬送部５、ロット処理部６など）の動作を制御することで、基板８を処理する。 The substrate liquid processing apparatus 1 is configured as described above, and the control unit 7 controls the respective units (the carrier loading / unloading unit 2, the lot formation unit 3, the lot placement unit 4, the lot conveyance unit 5, the lot processing unit 6 And the like) to process the substrate 8.

この基板液処理装置１で基板８をエッチング処理する場合、記憶媒体63に記憶された基板液処理プログラムに従って制御部７でエッチング処理装置26などを以下に説明するように制御する（図４参照。）。 When the substrate liquid processing apparatus 1 etches the substrate 8, the controller 7 controls the etching processing apparatus 26 and the like as described below according to the substrate liquid processing program stored in the storage medium 63 (see FIG. 4). ).

まず、基板液処理装置１は、基板８のエッチング処理を開始する前に処理液貯留部38に貯留する処理液を交換する（処理液交換工程）。 First, the substrate liquid processing apparatus 1 exchanges the processing liquid stored in the processing liquid storage unit 38 before starting the etching processing of the substrate 8 (processing liquid exchange step).

この処理液交換工程において、制御部７は、処理液供給部39によって処理液貯留部38に処理液を供給させるとともに、処理液循環部40によって処理液を循環させながら加熱させて、所定濃度（88.3重量％）及び所定温度（165℃）の処理液を生成させる。その後、制御部７は、基板昇降機構36によってダミーのシリコンウエハを処理液に所定時間浸漬させて、処理液中のシリコン濃度が所定濃度となるようにする。この処理液交換工程において、制御部７は、処理液循環部40によって処理液を循環させ、所定のタイミングで開閉弁58を開放させて処理液を処理液循環部40から第２の処理液排出部54を介して排液させる。そして、制御部７は、所定のタイミング（たとえば、処理液交換工程の終了直前）開閉弁60を開放させて濃度センサ61で処理液中のシリコン濃度を計測させる。制御部７は、濃度センサ61で計測したシリコン濃度が所定濃度範囲内でない場合には警報し処理を中断する。なお、処理液交換工程では、処理液を処理液循環部40で常時循環させてもよく、また、断続的に循環させてもよく、また、たとえば、ダミーのシリコンウエハを処理液に所定時間浸漬させ、シリコンウエハを浸漬させた直後はしばらく循環を停止させ、所定のタイミングから循環させてもよい。 In the processing liquid exchange step, the control section 7 causes the processing liquid supply section 39 to supply the processing liquid to the processing liquid storage section 38, and the processing liquid circulation section 40 causes the processing liquid to be heated while circulating the processing liquid. A processing solution of 88.3 wt%) and a predetermined temperature (165 ° C.) is produced. Thereafter, the control unit 7 causes the substrate lifting mechanism 36 to immerse the dummy silicon wafer in the processing liquid for a predetermined time so that the silicon concentration in the processing liquid becomes a predetermined concentration. In the processing liquid exchange process, the control section 7 circulates the processing liquid by the processing liquid circulating section 40, opens the on-off valve 58 at a predetermined timing, and discharges the processing liquid from the processing liquid circulating section 40 to the second processing liquid. Drain through part 54. Then, the control unit 7 opens the on-off valve 60 at a predetermined timing (for example, immediately before the end of the treatment liquid replacement process) to cause the concentration sensor 61 to measure the silicon concentration in the treatment liquid. When the silicon concentration measured by the concentration sensor 61 is not within the predetermined concentration range, the control unit 7 warns and interrupts the process. In the treatment liquid exchange step, the treatment liquid may be circulated constantly in the treatment liquid circulation unit 40 or may be circulated intermittently, or, for example, a dummy silicon wafer is immersed in the treatment liquid for a predetermined time The circulation may be stopped for a while immediately after immersing the silicon wafer and immersing the silicon wafer from a predetermined timing.

ここでは、予めシリコンウエハの浸漬時間とシリコン濃度との関係を調べておき、ダミーのシリコンウエハを処理液に所定時間浸漬させることでシリコン濃度が所定濃度範囲となるようにしているが、濃度センサ61に所定のタイミングでシリコン濃度を計測させ、シリコン濃度が所定濃度範囲となるまでダミーのシリコンウエハを処理液に浸漬させるように制御してもよい。なお、開閉弁60を開放させて濃度センサ61で計測させるタイミングは、開閉弁58を開放させて処理液を排出させるタイミングよりも頻度を少なくしたほうが、濃度センサ61に処理液が接液する時間（頻度）をより一層短く（少なく）することができる。 Here, the relationship between the immersion time of the silicon wafer and the silicon concentration is examined in advance, and the dummy silicon wafer is immersed in the treatment liquid for a predetermined time so that the silicon concentration falls within the predetermined concentration range. The silicon concentration may be measured at a predetermined timing at 61, and control may be performed to immerse the dummy silicon wafer in the processing liquid until the silicon concentration falls within the predetermined concentration range. The timing at which the concentration sensor 61 contacts the concentration sensor 61 is less likely to occur when the on-off valve 60 is opened and the frequency measured by the concentration sensor 61 is smaller than the timing at which the on-off valve 58 is opened to discharge the treatment liquid. The (frequency) can be further shortened (less).

濃度センサ61で計測したシリコン濃度が所定濃度範囲内になった後に、基板液処理装置１は、基板８のエッチング処理を行う（基板液処理工程）。 After the silicon concentration measured by the concentration sensor 61 falls within the predetermined concentration range, the substrate liquid processing apparatus 1 performs the etching processing of the substrate 8 (substrate liquid processing step).

この基板液処理工程では、基板８を処理槽34に搬入する基板搬入工程と、処理槽34で基板８を処理する基板処理工程と、処理槽34から基板８を搬出する基板搬出工程とを行う。 In this substrate liquid processing step, a substrate loading step of loading the substrate 8 into the processing tank 34, a substrate processing step of processing the substrate 8 in the processing tank 34, and a substrate unloading step of unloading the substrate 8 from the processing tank 34 are performed. .

基板搬入工程では、基板昇降機構36を処理槽34の内部から上昇させた後に、同時に処理する１ロット分の基板８をロット搬送機構19から基板昇降機構36へと搬送させ、その後、基板８を保持した基板昇降機構36を処理槽34の内部へと降下させる。これにより、処理槽34に貯留された処理液に基板８が浸漬される。 In the substrate loading process, after raising the substrate lifting mechanism 36 from the inside of the processing tank 34, the lot 8 of the substrate 8 to be processed simultaneously is transported from the lot transport mechanism 19 to the substrate lifting mechanism 36 and thereafter the substrate 8 is The held substrate lifting mechanism 36 is lowered to the inside of the processing tank 34. Thus, the substrate 8 is immersed in the treatment liquid stored in the treatment tank 34.

基板処理工程では、処理槽34の内部で基板昇降機構36を降下させた状態のまま所定時間保持させる。これにより、基板８が処理液に所定時間浸漬され、基板８がエッチング処理される。 In the substrate processing step, the substrate lifting mechanism 36 is held for a predetermined time while being lowered in the processing tank 34. Thereby, the substrate 8 is immersed in the processing liquid for a predetermined time, and the substrate 8 is etched.

基板搬出工程では、基板８を保持した基板昇降機構36を処理槽34の内部から上昇させた後に、同時に処理した１ロット分の基板８を基板昇降機構36からロット搬送機構19へと搬送させる。 In the substrate unloading step, after the substrate lifting mechanism 36 holding the substrate 8 is lifted from the inside of the processing tank 34, one lot of substrates 8 processed at the same time is transported from the substrate lifting mechanism 36 to the lot transfer mechanism 19.

この基板液処理工程において、基板８が処理液でエッチング処理されると、処理液に含有されるシリコンの濃度が徐々に増加する。処理液の能力（エッチングレート）が処理液中のシリコン濃度に依存するために処理液中のシリコン濃度を一定濃度範囲内に保持する必要がある。そのため、制御部７は、基板８のエッチング処理中にポンプ50を駆動させて処理液循環部40で処理液を循環させ、所定のタイミングから断続的に開閉弁58を開放させて処理液の一部を処理液循環部40から第２の処理液排出部54を介して排出させるとともに、処理液供給部39から新たな処理液を供給させる。そして、制御部７は、所定のタイミング（たとえば、基板液処理工程の開始直後や終了直前）で開閉弁60を開放させて濃度センサ61で処理液中のシリコン濃度を計測させる。制御部７は、濃度センサ61で計測したシリコン濃度が所定濃度範囲内でない場合には警報し処理を中断する。なお、基板液処理工程では、処理液を処理液循環部40で断続的に循環させてもよく、また、常時循環させてもよい。 In the substrate liquid processing step, when the substrate 8 is etched with the processing liquid, the concentration of silicon contained in the processing liquid is gradually increased. In order for the capability (etching rate) of the processing solution to depend on the silicon concentration in the processing solution, it is necessary to maintain the silicon concentration in the processing solution within a certain concentration range. Therefore, the control unit 7 drives the pump 50 during the etching process of the substrate 8 to circulate the treatment liquid in the treatment liquid circulation unit 40, and intermittently opens and closes the on-off valve 58 from a predetermined timing. The unit is discharged from the treatment liquid circulation unit 40 via the second treatment liquid discharge unit 54, and a new treatment liquid is supplied from the treatment liquid supply unit 39. Then, the control unit 7 opens the on-off valve 60 at a predetermined timing (for example, immediately after the start or the end of the substrate liquid processing step), and causes the concentration sensor 61 to measure the silicon concentration in the processing liquid. When the silicon concentration measured by the concentration sensor 61 is not within the predetermined concentration range, the control unit 7 warns and interrupts the process. In the substrate liquid processing step, the processing liquid may be circulated intermittently in the processing liquid circulation unit 40 or may be circulated constantly.

ここでは、予め基板８のエッチング時間とエッチング処理中の処理液の排出量と新規の処理液の供給量とシリコン濃度との関係を調べておき、基板８のエッチング処理中に所定量の処理液を排出するとともに、所定量の処理液を新たに供給することでシリコン濃度が所定濃度範囲となるようにしているが、濃度センサ61に所定のタイミングでシリコン濃度を計測させ、シリコン濃度が所定濃度以上となった場合に基板液処理工程を終了するように制御してもよい。なお、ここでも開閉弁60を開放させて濃度センサ61で計測させるタイミングは、開閉弁58を開放させて処理液を排出させるタイミングよりも頻度を少なくしたほうが、濃度センサ61に処理液が接液する時間（頻度）をより一層短く（少なく）することができる。 Here, the relationship between the etching time of the substrate 8, the discharge amount of the processing liquid during etching processing, the supply amount of the new processing liquid, and the silicon concentration is checked beforehand, and the processing liquid of the predetermined amount is etched during the etching processing of the substrate 8. The silicon concentration is within the predetermined concentration range by newly supplying a predetermined amount of treatment liquid, but the concentration sensor 61 is made to measure the silicon concentration at a predetermined timing, and the silicon concentration is a predetermined concentration. It may be controlled to end the substrate liquid processing process when it becomes above. Also here, the timing at which the on-off valve 60 is opened and the timing measured by the concentration sensor 61 is lower in frequency than the timing at which the on-off valve 58 is opened and the processing liquid is discharged Time (frequency) can be further shortened (less).

基板液処理装置１は、基板搬入工程と基板処理工程と基板搬出工程とを所定回数繰り返して行った後に、処理液のシリコン濃度が所定範囲内となるように調整する（調整工程）。 The substrate liquid processing apparatus 1 adjusts the silicon concentration of the processing liquid to be within a predetermined range after repeatedly performing the substrate loading process, the substrate processing process, and the substrate unloading process a predetermined number of times (adjusting process).

この調整工程において、制御部７は、処理液供給部39によって処理液貯留部38に処理液を供給させるとともに、処理液循環部40によって処理液を循環させながら加熱させて、所定濃度（88.3重量％）及び所定温度（165℃）の処理液を生成させるとともに、処理液中のシリコン濃度が所定濃度となるように調整する。この調整工程において、制御部７は、処理液循環部40によって処理液を循環させ、所定のタイミングから断続的に開閉弁58を開放させて処理液を処理液循環部40から第２の処理液排出部54を介して排液させるとともに、処理液供給部39から新たな処理液を供給させる。そして、制御部７は、所定のタイミング（たとえば、調整工程の終了直前）で開閉弁60を開放させて濃度センサ61で処理液中のシリコン濃度を計測させる。制御部７は、濃度センサ61で計測したシリコン濃度が所定濃度範囲内でない場合には警報し、処理槽34への基板８の搬入を中断する。なお、調整工程では、処理液を処理液循環部40で常時循環させてもよく、また、断続的に循環させてもよく、また、しばらく循環を停止させ、所定のタイミングから循環させてもよい。 In this adjustment process, the control unit 7 causes the treatment liquid supply unit 39 to supply the treatment liquid to the treatment liquid storage unit 38 and causes the treatment liquid circulation unit 40 to heat the treatment liquid while circulating it to a predetermined concentration (88.3 weight %) And a predetermined temperature (165.degree. C.), and the silicon concentration in the treatment liquid is adjusted to a predetermined concentration. In this adjustment process, the control unit 7 causes the treatment liquid circulation unit 40 to circulate the treatment liquid, and intermittently opens and closes the on-off valve 58 from a predetermined timing to allow the treatment liquid to flow from the treatment liquid circulation unit 40 to the second treatment liquid. While discharging the liquid via the discharge unit 54, a new treatment liquid is supplied from the treatment liquid supply unit 39. Then, the control unit 7 opens the on-off valve 60 at a predetermined timing (for example, immediately before the end of the adjustment process), and causes the concentration sensor 61 to measure the silicon concentration in the processing liquid. The control unit 7 warns when the silicon concentration measured by the concentration sensor 61 is not within the predetermined concentration range, and interrupts the loading of the substrate 8 into the processing tank 34. In the adjustment step, the treatment liquid may be constantly circulated in the treatment liquid circulation unit 40, may be circulated intermittently, or may be suspended for a while, and may be circulated from a predetermined timing. .

ここでは、処理液の排出量と新規の処理液の供給量とシリコン濃度との関係を調べておき、所定量の処理液の排出し、所定量の処理液を新たに供給することでシリコン濃度が所定濃度範囲となるようにしているが、濃度センサ61に所定のタイミングでシリコン濃度を計測させ、シリコン濃度が所定濃度範囲となるまで処理液を排出し、新規の処理液を供給するように制御してもよい。なお、開閉弁60を開放させて濃度センサ61で計測させるタイミングは、開閉弁58を開放させて処理液を排出させるタイミングよりも頻度を少なくしたほうが、濃度センサ61に処理液が接液する時間（頻度）をより一層短く（少なく）することができる。 Here, the relationship between the discharge amount of the treatment liquid, the supply amount of the new treatment liquid, and the silicon concentration is checked, the treatment liquid of a predetermined amount is discharged, and the treatment liquid of a predetermined amount is newly supplied. In the predetermined concentration range, the concentration sensor 61 measures the silicon concentration at a predetermined timing, discharges the treatment liquid until the silicon concentration falls in the predetermined concentration range, and supplies a new treatment liquid. You may control. The timing at which the concentration sensor 61 contacts the concentration sensor 61 is less likely to occur when the on-off valve 60 is opened and the frequency measured by the concentration sensor 61 is smaller than the timing at which the on-off valve 58 is opened to discharge the treatment liquid. The (frequency) can be further shortened (less).

以上に説明したように、上記基板液処理装置１では、処理液貯留部38に貯留した基板８を処理するための処理液を処理液循環部40で循環し、循環する処理液を処理液循環部40の途中で分岐した第２の処理液排出部54から排出し、排出する処理液中のシリコン濃度を第２の処理液排出部54に設けた濃度センサ61で計測する。 As described above, in the substrate liquid processing apparatus 1, the processing liquid circulating unit 40 circulates the processing liquid for processing the substrate 8 stored in the processing liquid storage unit 38, and the processing liquid circulated is circulated. The silicon concentration in the processing liquid discharged from the second processing liquid discharge unit 54 branched off in the middle of the unit 40 is measured by the concentration sensor 61 provided in the second processing liquid discharge unit 54.

これにより、上記基板液処理装置１では、濃度センサ61が処理液に接液する時間を短くすることができ、濃度センサ61の故障や誤作動等の発生を防止することができるとともに、濃度センサ61から析出等した塵が基板８にパーティクルとなって付着するのを防止することができ、基板８を良好に液処理することができる。 Thereby, in the substrate liquid processing apparatus 1, the time for which the concentration sensor 61 contacts the processing solution can be shortened, and the occurrence of failure or malfunction of the concentration sensor 61 can be prevented, and the concentration sensor can be prevented. The dust deposited from 61 can be prevented from adhering to the substrate 8 as particles, and the substrate 8 can be treated well.

なお、その他の実施形態として、図４に示した実施形態では、基板液処理工程および調整工程において、処理液中のシリコン濃度を一定濃度範囲内に保持するため、制御部７は、基板８のエッチング処理中にポンプ50を駆動させて処理液循環部40で処理液を循環させ、所定のタイミングから断続的に開閉弁58を開放させて処理液の一部を処理液循環部40から第２の処理液排出部54を介して排出させるとともに、処理液供給部39から新たな処理液を供給しているが、これに限られることはなく、図５に示すように所定のタイミングから所定時間で連続的に開閉弁58を開放させて処理液の一部を処理液循環部40から第２の処理液排出部54を介して排出させるとともに、処理液供給部39から新たな処理液を供給するようにしてもよい。 As another embodiment, in the embodiment shown in FIG. 4, in order to maintain the silicon concentration in the processing liquid within a certain concentration range in the substrate liquid processing step and the adjustment step, the controller 7 controls the processing of the substrate 8. During the etching process, the pump 50 is driven to circulate the treatment liquid in the treatment liquid circulation unit 40, and the on-off valve 58 is intermittently opened from a predetermined timing to partially open the treatment liquid from the treatment liquid circulation unit 40. The new treatment liquid is supplied from the treatment liquid supply unit 39 while discharging the treatment liquid through the treatment liquid discharge unit 54. However, the present invention is not limited to this, and as shown in FIG. While the on-off valve 58 is continuously opened to discharge part of the treatment liquid from the treatment liquid circulation unit 40 via the second treatment liquid discharge unit 54 and supply a new treatment liquid from the treatment liquid supply unit 39. You may do it.

また、基板液処理工程において、基板液処理工程の開始からたとえば工程の途中まで連続的に処理液を排出するとともに、処理液を供給するようにし、その後は処理液の排出も供給も行なわないようにしてもよく、また、基板液処理工程の開始からたとえば処理の途中まで処理液の排出も供給も行なわないようにし、途中から終了まで連続的に処理液を排出するとともに、処理液を供給するようにしてもよい。 Further, in the substrate liquid processing step, the processing liquid is continuously discharged from the start of the substrate liquid processing step, for example, to the middle of the step, and the processing liquid is supplied, and thereafter neither processing liquid is discharged nor supplied. In addition, the process liquid is not discharged or supplied during, for example, the middle of the process from the start of the substrate liquid processing process, and the process liquid is continuously discharged and the process liquid is supplied from the middle to the end of the process. You may do so.

また、その他の実施形態として、開閉弁60を開放させて濃度センサ61で計測させるタイミングは、開閉弁58を開放させて処理液を排出させている間の所定のタイミング（たとえば、基板液処理工程の開始直後や終了直前）とすることで、濃度センサ61に処理液が接液する時間（頻度）をより一層短く（少なく）することができる。 Further, as another embodiment, the timing at which the on-off valve 60 is opened and the concentration sensor 61 measures is a predetermined timing while the on-off valve 58 is opened to discharge the processing liquid (for example, the substrate liquid processing step Immediately after the start or immediately before the end), it is possible to further shorten (decrease) the time (frequency) for the treatment liquid to contact the concentration sensor 61.

また、その他の実施形態として、たとえば、排出する処理液中のシリコン濃度を第２の処理液排出部54に設けた濃度センサ61で複数回計測した値を基に、基板液処理工程において、複数の計測値からシリコン濃度の上昇率を求め、基板8を処理する間にシリコン濃度が所定濃度範囲を超えると想定されると判断した場合は、シリコン濃度が所定濃度範囲を超えないよう処理液を排出する排出量および新規の処理液の供給する供給量を補正してもよい。 Further, as another embodiment, for example, in the substrate liquid processing step, a plurality of silicon concentrations in the processing liquid to be discharged are measured based on values measured a plurality of times by the concentration sensor 61 provided in the second processing liquid discharge unit 54. The rate of increase in silicon concentration is obtained from the measured value, and if it is determined that it is assumed that the silicon concentration will exceed the predetermined concentration range while processing the substrate 8, the processing liquid is selected so that the silicon concentration does not exceed the predetermined concentration range. The discharge amount to be discharged and the supply amount of the new treatment liquid may be corrected.

また、その他の実施形態として、濃度センサ61に処理液が接液する時間（頻度）をより一層短く（少なく）するために、第２の処理液排出部54に設けた濃度センサ61に処理液を通液しない間は、処理液が残留しないように、たとえば、濃度センサ61に不活性ガスまたは純水を供給し、処理液を除去するようにしてもよい。 Further, as another embodiment, in order to further shorten (decrease) the time (frequency) in which the treatment liquid is in contact with the concentration sensor 61, the treatment liquid is provided to the concentration sensor 61 provided in the second treatment liquid discharge unit 54. For example, an inert gas or pure water may be supplied to the concentration sensor 61 to remove the treatment liquid while the solution does not pass through, so that the treatment liquid does not remain.

１基板液処理装置
７制御部
８基板
38 処理液貯留部
39 処理液供給部
40 処理液循環部
41 処理液排出部
61 濃度センサ 1 substrate liquid processing apparatus 7 control unit 8 substrate
38 Treatment liquid reservoir
39 Treatment solution supply unit
40 treatment solution circulation unit
41 Treatment solution outlet
61 Concentration sensor

Claims

A processing bath in which the substrate is etched with an etching solution heated with a phosphoric acid aqueous solution;
A treatment liquid supply unit for supplying a phosphoric acid aqueous solution to the treatment tank;
A treatment liquid circulation unit for circulating an etching solution inside the treatment tank;
A processing solution discharge unit for discharging the etching solution;
A concentration sensor that measures the silicon concentration in the etching solution;
A control unit connected to the concentration sensor to control the treatment liquid supply unit, the treatment liquid circulation unit, and the treatment liquid discharge unit;
Have
The control unit circulates the etching solution in the processing solution circulation unit, causes the concentration sensor to measure the silicon concentration at a predetermined timing, and discharges the etching solution from the processing solution discharge unit, and the processing solution supply unit A phosphoric acid aqueous solution is supplied to the treatment tank ,
Thereafter, the treatment solution to stop the circulation of the etchant in the circulation portion, etching treatment using an aqueous phosphoric acid solution a dummy silicon wafer is immersed in the etching solution, characterized in predetermined concentration and to Rukoto silicon concentration Control device.

The control unit supplies phosphoric acid aqueous solution from the processing solution supply unit and discharges the etching solution from the processing solution discharge unit until the silicon concentration of the etching solution measured by the concentration sensor falls within a predetermined concentration range. The etching process control apparatus using the phosphoric acid aqueous solution of Claim 1 characterized by the above-mentioned.

The control unit determines in advance the relationship between the discharge amount of the etching solution from the treatment liquid discharge unit, the supply amount of the phosphoric acid aqueous solution from the treatment liquid supply unit, and the silicon concentration, and the silicon concentration is within a predetermined concentration range. The etching processing control apparatus using a phosphoric acid aqueous solution according to claim 1, wherein the etching solution of a predetermined amount is discharged and a phosphoric acid aqueous solution of a predetermined amount is supplied.

The control unit measures the silicon concentration a plurality of times with the concentration sensor to obtain an increase rate of the silicon concentration, and when it is determined that the silicon concentration exceeds the predetermined concentration range, the silicon concentration does not exceed the predetermined concentration range The etching process control apparatus using the phosphoric acid aqueous solution according to claim 2 or 3, wherein the discharge amount of the etching solution and the supply amount of the phosphoric acid aqueous solution are corrected.

2. The etching processing control apparatus using phosphoric acid aqueous solution according to claim 1, wherein the control unit interrupts the loading of the substrate into the processing tank when the silicon concentration is not within a predetermined concentration range.

The said control part supplies the phosphoric acid aqueous solution of a density | concentration lower than the said etching liquid from the said process liquid supply part, It heats with a heater and makes it into the said etching liquid, The phosphoric acid aqueous solution of Claim 1 characterized by the above-mentioned. Etching control system using.

The etching processing control apparatus using a phosphoric acid aqueous solution according to claim 1, wherein the processing liquid circulation unit includes a pump, a heater and a filter.

8. The etching processing control apparatus using a phosphoric acid aqueous solution according to claim 7 , wherein the pump is used to circulate the processing liquid along a circulation flow channel by driving.

8. The phosphoric acid according to claim 7 , wherein the heater heats the etching solution in the processing solution circulating unit to maintain the etching solution at a predetermined temperature, and the filter filters impurities in the etching solution. Etching control system using aqueous solution.

An etching solution for etching the substrate in the treatment tank is circulated in the treatment solution circulation unit, the silicon concentration is measured by the concentration sensor at a predetermined timing, and the etching solution is discharged from the treatment solution discharge unit. An aqueous acid solution is supplied to the processing tank, the aqueous phosphoric acid solution is heated, and then the circulation of the etching solution in the processing solution circulation unit is stopped, and a dummy silicon wafer is immersed in the etching solution to obtain a silicon concentration. An etching process control method using a phosphoric acid aqueous solution, wherein the concentration is a predetermined concentration .

Claims, characterized in that the silicon concentration of the etching solution was measured by the concentration sensor to discharge the etchant from said processing liquid discharge unit supplies a phosphoric acid aqueous solution from the processing solution supply unit to a predetermined concentration range 11. An etching process control method using the aqueous phosphoric acid solution according to item 10 .

The relationship between the discharge amount of the etching solution from the treatment solution discharge unit, the supply amount of the phosphoric acid aqueous solution from the treatment solution supply unit, and the silicon concentration is determined in advance, and the predetermined amount is set so that the silicon concentration falls within a predetermined concentration range. The etching process control method using the phosphoric acid aqueous solution according to claim 10 , wherein the etching solution is discharged and a predetermined amount of phosphoric acid aqueous solution is supplied.

The silicon concentration is measured a plurality of times by the concentration sensor to obtain an increase rate of the silicon concentration, and when it is determined that the silicon concentration exceeds the predetermined concentration range, the etching solution is discharged so that the silicon concentration does not exceed the predetermined concentration range. The etching process control method using the phosphoric acid aqueous solution according to claim 11 , wherein the amount and the supplied amount of the phosphoric acid aqueous solution are corrected.

11. The etching process control method using a phosphoric acid aqueous solution according to claim 10 , wherein the loading of the substrate into the processing tank is interrupted when the silicon concentration is not within a predetermined concentration range.

An etching process using a phosphoric acid aqueous solution according to claim 10 , wherein a phosphoric acid aqueous solution having a concentration lower than that of the etching liquid is supplied from the processing liquid supply unit and heated by a heater to obtain the etching liquid. Control method.

A processing bath in which the substrate is etched with an etching solution heated with a phosphoric acid aqueous solution;
A treatment liquid supply unit for supplying a phosphoric acid aqueous solution to the treatment tank;
A treatment liquid circulation unit for circulating an etching solution inside the treatment tank;
A processing solution discharge unit for discharging the etching solution;
A concentration sensor that measures the silicon concentration in the etching solution;
A computer readable storage medium storing a program for etching the substrate with a phosphoric acid aqueous solution using an etching apparatus having
The etching solution is circulated in the treatment solution circulation unit, the silicon concentration is measured by the concentration sensor at a predetermined timing, the etching solution is discharged from the treatment solution discharge unit, and the phosphoric acid aqueous solution is treated in the treatment solution supply unit Supply to the treatment tank ,
Thereafter, the circulation of the etching solution in the processing solution circulating unit is stopped, and the dummy silicon wafer is immersed in the etching solution to make the silicon concentration a predetermined concentration, and the substrate is etched with a phosphoric acid aqueous solution. A computer readable storage medium storing a program.