JP6324775B2 - Substrate processing apparatus and substrate processing method using substrate processing apparatus - Google Patents

Description

  The present invention relates to a substrate processing apparatus for performing various processes on a substrate and a substrate processing method using the substrate processing apparatus.

  Conventionally, in order to perform various processes on substrates such as semiconductor wafers, photomask glass substrates, liquid crystal display glass substrates, plasma display glass substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, etc. A substrate processing apparatus is used.

  There is a batch-type substrate processing apparatus that immerses a plurality of substrates in a processing solution stored in a processing tank and performs processing such as etching. For example, a batch type substrate processing apparatus described in Patent Document 1 includes a processing tank and a circulation line.

  In the substrate processing apparatus, a phosphoric acid aqueous solution is stored in a processing tank, and a substrate on which a silicon oxide film and a silicon nitride film are formed is immersed in the phosphoric acid aqueous solution. In this state, the phosphoric acid aqueous solution overflowing from the processing tank is recovered and supplied again into the processing tank through the circulation line.

  By including an appropriate amount of silicon in the phosphoric acid aqueous solution, etching of the silicon oxide film by the phosphoric acid aqueous solution is suppressed. Thereby, the silicon nitride film can be selectively etched.

  In order to keep the silicon concentration of the phosphoric acid aqueous solution within an appropriate range, the substrate processing apparatus is provided with an additive charging mechanism and a trap agent charging mechanism. The additive charging mechanism increases the silicon concentration of the phosphoric acid aqueous solution by charging the additive into the treatment tank. The trap agent charging mechanism suppresses an excessive increase in the silicon concentration of the phosphoric acid aqueous solution by introducing the trap agent into the treatment tank.

JP 2009-94455 A

  In recent years, with the increase in density and integration of devices, the number of processes using a single-wafer type substrate processing apparatus instead of a batch type substrate processing apparatus is increasing. In a single-wafer type substrate processing apparatus, for example, a phosphoric acid aqueous solution is supplied to a substrate on which a silicon oxide film and a silicon nitride film are formed, the phosphoric acid aqueous solution supplied to the substrate is recovered, and the recovered phosphoric acid aqueous solution is recovered. It can be reused through the circulation line.

  However, in a single wafer processing apparatus, an aqueous phosphoric acid solution is supplied for each substrate. Therefore, it is difficult to keep the silicon concentration of the phosphoric acid aqueous solution supplied to the plurality of substrates constant. In this case, the etching amount of the silicon nitride film varies among a plurality of substrates. Thus, it is difficult to perform uniform processing with high accuracy on a plurality of substrates.

  Therefore, it is conceivable to adjust the silicon concentration for a certain amount of phosphoric acid aqueous solution and use the adjusted phosphoric acid aqueous solution for processing a plurality of substrates. In this case, since it is necessary to adjust the silicon concentration every time a certain amount of phosphoric acid aqueous solution is used, it is necessary to temporarily interrupt the processing of the substrate. As a result, the substrate processing efficiency decreases.

  An object of the present invention is to provide a substrate processing apparatus and a substrate processing method using the substrate processing apparatus capable of performing uniform processing with high accuracy while preventing a decrease in processing efficiency of the substrate.

(1) A substrate processing apparatus according to a first aspect of the present invention is a processing unit including a processing liquid nozzle for supplying a processing liquid to a substrate, a plurality of tanks including a supply tank, a recovery tank, and an adjustment tank; The supply operation for supplying the processing liquid from the tank to the processing liquid nozzle, the recovery operation for recovering the processing liquid from the processing unit to the recovery tank, and the adjustment operation for adjusting the concentration of the processing liquid stored in the adjustment tank are performed in parallel. A path configuration unit that configures the path of the processing liquid to be performed, and the path configuration unit changes the path of the processing liquid so as to change the recovery tank to the adjustment tank after the end of the recovery operation , After the adjustment operation is completed, the adjusted treatment liquid is supplied from the adjustment tank to the supply tank, and the route of the treatment liquid is changed so that the adjusted treatment liquid is supplied to the treatment unit, and the supply liquid is supplied to the supply tank. Processing After the supply, the processing liquid path is changed so that the adjustment tank is changed to the recovery tank, the plurality of tanks include the first, second and third tanks, and the first tank is for supply One of the second and third tanks is set as a recovery tank, the other of the second and third tanks is set as an adjustment tank, and the path component is a first tank. A first processing liquid supply system that performs a supply operation of supplying the processing liquid from the tank to the processing liquid nozzle, and a recovery operation that selectively recovers the processing liquid from the processing unit to one of the second and third tanks. A concentration adjusting device for adjusting the concentration of the processing liquid stored in the other tank of the second and third tanks, and after completion of the adjusting operation by the concentration adjusting device, Adjust the treated solution to the other And a second processing liquid supply system for supplying the first tank to the first tank. The processing liquid recovery system performs a recovery operation from the processing unit to the second tank and a recovery operation from the processing unit to the third tank. Alternately, the concentration adjusting device alternately performs the adjustment operation in the third tank and the adjustment operation in the second tank .

  In the substrate processing apparatus, the supply operation and the recovery operation are performed in parallel. The processing liquid is supplied from the supply tank to the processing liquid nozzle by the supply operation, and the processing liquid is recovered from the processing unit to the recovery tank by the recovery operation. Further, the concentration of the processing liquid stored in the adjustment tank is adjusted by the adjustment operation.

  In this case, the processing liquid recovered from the processing unit is not supplied to the adjustment tank. Therefore, the concentration of the processing liquid can be accurately adjusted in the adjustment tank. After the adjustment operation, the processing liquid adjusted in the adjustment tank is supplied to the processing unit. Here, the adjusted processing liquid is supplied from the adjustment tank to the processing liquid nozzle through the supply tank, or is supplied from the adjustment tank to the processing liquid nozzle. Thereby, the substrate can be processed with the processing liquid whose concentration is accurately adjusted. Further, after the collection operation is completed, the collection tank is changed to an adjustment tank. Thereby, the density | concentration of the process liquid collect | recovered by collection | recovery operation | movement can be adjusted correctly.

  In this way, it is possible to accurately adjust the concentration of the processing liquid without stopping the supply operation and the recovery operation. As a result, it is possible to perform uniform processing with high accuracy while preventing a reduction in substrate processing efficiency.

Route component, after the adjustment operation is completed, and supplies to the supply tank was adjusted liquid from the adjusting tank, after the supply of the process liquid to the supply tank, changing the adjustment tank recovery tank as described above, to change the path of the processing solution.

  In this case, after the adjustment operation is completed, the adjusted processing liquid is supplied to the supply tank. Thereby, the adjusted processing liquid is supplied from the adjusting tank to the processing liquid nozzle through the supply tank. Further, the adjustment tank is changed to a recovery tank, and the recovery tank is changed to an adjustment tank. Thereby, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation. In addition, since the recovered processing liquid is not supplied to the supply tank but the adjusted processing liquid is supplied, contamination of the supply tank is prevented and the concentration of the processing liquid in the supply tank is reduced. Kept constant.

The multiple tank includes a first, second and third tanks, the first tank is supplied tank, either the second or third tank is set in the recovery tank, the The other of the second tank and the third tank is set as an adjustment tank, and the path configuration unit includes a first processing liquid supply system that performs a supply operation of supplying the processing liquid from the first tank to the processing liquid nozzle, A processing liquid recovery system that performs a recovery operation for selectively recovering the processing liquid from the processing unit to one of the second and third tanks, and the other tank of the second and third tanks. A concentration adjusting device that performs an adjusting operation for adjusting the concentration of the processing liquid, and a second processing liquid supply system that supplies the adjusted processing liquid from the other tank to the first tank after the adjusting operation by the concentration adjusting device is completed. The processing liquid recovery system includes a processing unit. The collection operation from the tank to the second tank and the collection operation from the processing unit to the third tank are alternately performed, and the concentration adjusting device alternately performs the adjustment operation in the third tank and the adjustment operation in the second tank. line intends to.

  In this case, the first tank is used as a supply tank. Thereby, the supply operation from the first tank to the processing liquid nozzle is performed by the first processing liquid supply system. The second and third tanks are alternately set as a recovery tank and an adjustment tank. Thereby, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation.

( 2 ) A substrate processing apparatus according to a second invention includes a processing unit including a processing liquid nozzle for supplying a processing liquid to a substrate, a plurality of tanks including a supply tank, a recovery tank and an adjustment tank, and a supply The supply operation for supplying the processing liquid from the tank to the processing liquid nozzle, the recovery operation for recovering the processing liquid from the processing unit to the recovery tank, and the adjustment operation for adjusting the concentration of the processing liquid stored in the adjustment tank are performed in parallel. A path configuration unit that configures the path of the processing liquid to be performed, and the path configuration unit changes the path of the processing liquid so as to change the recovery tank to the adjustment tank after the end of the recovery operation, After the adjustment operation is completed, the adjustment tank is changed to a supply tank, the processing solution path is changed so that the adjusted treatment solution is supplied to the processing unit, and the supply tank is changed after the supply operation is completed. Recovery The path of the processing liquid is changed so as to change to a tank, and the plurality of tanks include first, second, and third tanks, and any one of the first, second, or third tanks is for supply The tank is set, and any one of the first, second, or third tank is set as a recovery tank, and any one of the first, second, or third tank is set as an adjustment tank. The path component is recovered from the processing unit and a processing liquid supply system that performs a supply operation of supplying the processing liquid from the first, second, or third tank set in the supply tank to the processing liquid nozzle. A processing liquid recovery system for performing a recovery operation for selectively recovering the processing liquid in the first, second, or third tank set in the tank for use, and the first, second, or third set in the adjustment tank. Adjustment operation to adjust the concentration of the processing liquid stored in the tank The processing liquid supply system includes a concentration adjusting device that performs the supply operation from the first tank to the processing liquid nozzle, the supply operation from the third tank to the processing liquid nozzle, and the second tank to the processing liquid nozzle. The processing liquid recovery system sequentially performs the recovery operation from the processing unit to the second tank, the recovery operation from the processing unit to the first tank, and the recovery operation from the processing unit to the third tank. The concentration adjusting device sequentially performs the adjustment operation in the third tank, the adjustment operation in the second tank, and the adjustment operation in the first tank.
In the substrate processing apparatus, the supply operation, the recovery operation, and the adjustment operation are performed in parallel. The processing liquid is supplied from the supply tank to the processing liquid nozzle by the supply operation, and the processing liquid is recovered from the processing unit to the recovery tank by the recovery operation. Further, the concentration of the processing liquid stored in the adjustment tank is adjusted by the adjustment operation.
In this case, the processing liquid recovered from the processing unit is not supplied to the adjustment tank. Therefore, the concentration of the processing liquid can be accurately adjusted in the adjustment tank. After completion of the adjustment operation, the adjustment tank is changed to a supply tank. The adjusted processing liquid is supplied from the supply tank to the processing liquid nozzle of the processing unit. Thereby, the substrate can be processed with the processing liquid whose concentration is accurately adjusted. Further, after the collection operation is completed, the collection tank is changed to an adjustment tank. Thereby, the density | concentration of the process liquid collect | recovered by collection | recovery operation | movement can be adjusted correctly.
In this way, it is possible to accurately adjust the concentration of the processing liquid without stopping the supply operation and the recovery operation. As a result, it is possible to perform uniform processing with high accuracy while preventing a reduction in substrate processing efficiency.
Path component, after the adjustment operation is completed, to change the control tank to the supply tank, after the end of the supply operation, so as to change the supply tank to the recovery tank, to change the path of the processing solution.

  In this case, after the adjustment operation is completed, the adjustment tank is changed to a supply tank. Thereby, the adjusted processing liquid is supplied from the supply tank after the change to the processing liquid nozzle. In addition, after the supply operation is completed, the supply tank is changed to a recovery tank. Thereby, the processing liquid is recovered from the processing unit to the changed recovery tank. Further, after the collection operation is completed, the collection tank is changed to an adjustment tank. As a result, the concentration of the treatment liquid is adjusted in the changed adjustment tank. In this way, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation.

The multiple tanks, including the first, second and third tank, first, any one of the second or third tank is set to supply tank, the first, second or third Any other one of the tanks is set as a recovery tank, any one of the first, second, or third tanks is set as an adjustment tank, and the path configuration unit is set as a supply tank A processing liquid supply system that performs a supply operation of supplying the processing liquid from the first, second, or third tank to the processing liquid nozzle, and a first, second, or third setting that is set from the processing unit to the recovery tank. A process liquid recovery system for selectively recovering the process liquid in the tank, and an adjustment for adjusting the concentration of the process liquid stored in the first, second or third tank set in the adjustment tank And a processing liquid supply system including a concentration adjusting device that performs an operation. The supply operation from the tank to the treatment liquid nozzle, the supply operation from the second tank to the treatment liquid nozzle, and the supply operation from the third tank to the treatment liquid nozzle are sequentially performed. The collection operation to the second tank, the collection operation from the processing unit to the third tank, and the collection operation from the processing unit to the first tank are sequentially performed. adjusting operation of the tank, and intends sequentially line adjustment operation in the second tank.

  In this case, each of the first, second, and third tanks is sequentially used as a supply tank, a recovery tank, and an adjustment tank. Thereby, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation.

( 3 ) The substrate includes a first film formed of the first material and a second film formed of the second material, and the processing liquid uses the first material more than the second material. A component that selectively etches at a high rate may be included, and the adjusting operation may include a process of adjusting the concentration of the component in the processing liquid.

  In this case, the component that selectively etches the first material at a higher rate than the second material is adjusted by the adjusting operation. This makes it possible to accurately remove the first film of the first and second films and leave the second film.

( 4 ) The first material includes silicon nitride, the second material includes silicon oxide, the treatment liquid is a solution including silicon and phosphoric acid, and the adjustment operation adjusts the concentration of silicon in the solution. Processing may be included.

  Silicon suppresses the etching rate of silicon oxide. Thus, the first film can be selectively removed from the first film containing silicon nitride and the second film containing silicon oxide by supplying the treatment liquid to the substrate.

( 5 ) A substrate processing method according to a third invention is a substrate processing method using a substrate processing apparatus, wherein the substrate processing apparatus includes a processing unit including a processing liquid nozzle for supplying a processing liquid to the substrate, and a supply unit . A plurality of tanks including a tank, an adjustment tank, and a recovery tank. The substrate processing method recovers the processing liquid from the processing unit to the recovery tank by supplying operation of supplying the processing liquid from the supply tank to the processing liquid nozzle. The step of performing the collecting operation and the adjusting operation for adjusting the concentration of the processing liquid stored in the adjustment tank in parallel, and the step of performing the supplying operation, the collecting operation and the adjusting operation in parallel is the end of the collecting operation. after the step of changing the path of the processing solution so as to change the recovery tank to the adjustment tank, after the adjustment operation is completed, the supply tank from the adjustment tank was adjusted liquid Feeding, and so tuned treatment liquid is supplied to the processing unit, and changing the path of the treatment liquid, after the supply of the process liquid to the supply tank, so as to change the control tank to recovery tank A plurality of tanks including first, second, and third tanks, wherein the first tank is a supply tank, and the second or third tank. Is set as a recovery tank, the other of the second and third tanks is set as an adjustment tank, and the supply operation is performed by supplying the processing liquid from the first tank to the processing liquid nozzle. The recovery operation is performed by selectively recovering the processing liquid from the processing unit to one of the second and third tanks, and is stored in the other tank of the second and third tanks. Processing solution concentration In the step of performing the supply operation, the recovery operation and the adjustment operation in parallel, the adjusted processing liquid is supplied from the other tank to the first tank after the adjustment operation is completed. Alternately performing steps, a recovery operation from the processing unit to the second tank and a recovery operation from the processing unit to the third tank, and an adjustment operation in the third tank and an adjustment operation in the second tank Further comprising the steps of:

  In the substrate processing method, the supply operation and the recovery operation are performed in parallel. The processing liquid is supplied from the supply tank to the processing liquid nozzle by the supply operation, and the processing liquid is recovered from the processing unit to the recovery tank by the recovery operation. Further, the concentration of the processing liquid stored in the adjustment tank is adjusted by the adjustment operation.

  In this case, the processing liquid recovered from the processing unit is not supplied to the adjustment tank. Therefore, the concentration of the processing liquid can be accurately adjusted in the adjustment tank. After the adjustment operation, the processing liquid adjusted in the adjustment tank is supplied to the processing unit. Here, the adjusted processing liquid is supplied from the adjustment tank to the processing liquid nozzle through the supply tank, or is supplied from the adjustment tank to the processing liquid nozzle. Thereby, the substrate can be processed with the processing liquid whose concentration is accurately adjusted. Further, after the collection operation is completed, the collection tank is changed to an adjustment tank. Thereby, the density | concentration of the process liquid collect | recovered by collection | recovery operation | movement can be adjusted correctly.

In this way, it is possible to accurately adjust the concentration of the processing liquid without stopping the supply operation and the recovery operation. As a result, it is possible to perform uniform processing with high accuracy while preventing a reduction in substrate processing efficiency.
In addition, after the adjustment operation is completed, the adjusted processing liquid is supplied to the supply tank. Thereby, the adjusted processing liquid is supplied from the adjusting tank to the processing liquid nozzle through the supply tank. Further, the adjustment tank is changed to a recovery tank, and the recovery tank is changed to an adjustment tank. Thereby, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation. In addition, since the recovered processing liquid is not supplied to the supply tank but the adjusted processing liquid is supplied, contamination of the supply tank is prevented and the concentration of the processing liquid in the supply tank is reduced. Kept constant.
Further, the first tank is used as a supply tank. Thereby, the supply operation from the first tank to the processing liquid nozzle is performed by the first processing liquid supply system. The second and third tanks are alternately set as a recovery tank and an adjustment tank. Thereby, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation.
(6) A substrate processing method according to a fourth aspect of the present invention is a substrate processing method using a substrate processing apparatus, the substrate processing apparatus including a processing unit including a processing liquid nozzle for supplying a processing liquid to the substrate, and a supply unit A plurality of tanks including a tank, an adjustment tank, and a recovery tank. The substrate processing method recovers the processing liquid from the processing unit to the recovery tank by supplying operation of supplying the processing liquid from the supply tank to the processing liquid nozzle. The step of performing the collecting operation and the adjusting operation for adjusting the concentration of the processing liquid stored in the adjustment tank in parallel, and the step of performing the supplying operation, the collecting operation and the adjusting operation in parallel is the end of the collecting operation. Later, the path of the processing liquid is changed so that the recovery tank is changed to the adjustment tank, and after the adjustment operation is completed, the adjustment tank is changed to the supply tank. A step of changing the path of the processing liquid so that the liquid is supplied to the processing unit; and a step of changing the path of the processing liquid so that the supply tank is changed to a recovery tank after the supply operation is completed. The plurality of tanks include first, second, and third tanks, and any one of the first, second, or third tanks is set as a supply tank, and the first, second, or third tanks are provided. Any one of the other tanks is set as a recovery tank, and any one of the first, second, or third tanks is set as an adjustment tank, and the first tank is set as a supply tank. The supply operation is performed by supplying the processing liquid from the second or third tank to the processing liquid nozzle, and selectively from the processing unit to the first, second, or third tank set as the recovery tank. By collecting the processing solution The adjustment operation is performed by adjusting the concentration of the processing liquid stored in the first, second, or third tank set in the adjustment tank, and the supply operation, the recovery operation, and the adjustment operation are performed. The step performed in parallel is a step of sequentially performing a supply operation from the first tank to the treatment liquid nozzle, a supply operation from the third tank to the treatment liquid nozzle, and a supply operation from the second tank to the treatment liquid nozzle. A step of performing a recovery operation from the processing unit to the second tank, a recovery operation from the processing unit to the first tank, and a recovery operation from the processing unit to the third tank, and an adjustment operation in the third tank And a step of sequentially performing an adjustment operation in the second tank and an adjustment operation in the first tank.
In the substrate processing method, the supply operation, the recovery operation, and the adjustment operation are performed in parallel. The processing liquid is supplied from the supply tank to the processing liquid nozzle by the supply operation, and the processing liquid is recovered from the processing unit to the recovery tank by the recovery operation. Further, the concentration of the processing liquid stored in the adjustment tank is adjusted by the adjustment operation.
In this case, the processing liquid recovered from the processing unit is not supplied to the adjustment tank. Therefore, the concentration of the processing liquid can be accurately adjusted in the adjustment tank. After completion of the adjustment operation, the adjustment tank is changed to a supply tank. The adjusted processing liquid is supplied from the supply tank to the processing liquid nozzle of the processing unit. Thereby, the substrate can be processed with the processing liquid whose concentration is accurately adjusted. Further, after the collection operation is completed, the collection tank is changed to an adjustment tank. Thereby, the density | concentration of the process liquid collect | recovered by collection | recovery operation | movement can be adjusted correctly.
In this way, it is possible to accurately adjust the concentration of the processing liquid without stopping the supply operation and the recovery operation. As a result, it is possible to perform uniform processing with high accuracy while preventing a reduction in substrate processing efficiency.
Further, after the adjustment operation is completed, the adjustment tank is changed to a supply tank. Thereby, the adjusted processing liquid is supplied from the supply tank after the change to the processing liquid nozzle. In addition, after the supply operation is completed, the supply tank is changed to a recovery tank. Thereby, the processing liquid is recovered from the processing unit to the changed recovery tank. Further, after the collection operation is completed, the collection tank is changed to an adjustment tank. As a result, the concentration of the treatment liquid is adjusted in the changed adjustment tank. In this way, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation.
Each of the first, second, and third tanks is used as a supply tank, a recovery tank, and an adjustment tank in sequence. Thereby, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation.

  According to the present invention, it is possible to perform uniform processing with high accuracy while preventing a decrease in processing efficiency of a substrate.

It is a schematic diagram which shows the structure of the substrate processing apparatus which concerns on one embodiment of this invention. FIG. 4 is a time chart showing operation contents related to the first, second and third tanks of FIG. 1 respectively. FIG. It is a schematic diagram which shows operation | movement of the substrate processing apparatus in the time t1-time t7 of FIG. It is a schematic diagram which shows operation | movement of the substrate processing apparatus in the time t1-time t7 of FIG. It is a schematic diagram which shows operation | movement of the substrate processing apparatus in the time t1-time t7 of FIG. It is a schematic diagram which shows operation | movement of the substrate processing apparatus in the time t1-time t7 of FIG. It is a schematic diagram which shows operation | movement of the substrate processing apparatus in the time t1-time t7 of FIG. It is a time chart which concerns on the 1st comparative example for demonstrating the effect of the substrate processing apparatus which concerns on one embodiment of this invention. It is a time chart which concerns on the 2nd comparative example for demonstrating the effect of the substrate processing apparatus which concerns on one embodiment of this invention. It is a figure for demonstrating the effect of the substrate processing apparatus which concerns on one embodiment of this invention. It is a schematic diagram which shows the structure of the substrate processing apparatus which concerns on other embodiment. It is a figure for demonstrating the effect of the substrate processing apparatus which concerns on other embodiment.

  Hereinafter, a substrate processing apparatus and a substrate processing method using the substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description, a substrate refers to a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a PDP (plasma display panel), a glass substrate for a photomask, a substrate for an optical disk, and the like.

The substrate processing apparatus according to this embodiment is a single wafer processing apparatus that processes substrates one by one. In the substrate processing apparatus, a high-temperature phosphoric acid aqueous solution containing silicon as a processing liquid on a substrate on which a silicon oxide film made of silicon oxide (SiO ₂ ) and a silicon nitride film made of silicon nitride (Si ₃ N ₄ ) are formed. (H ₃ PO ₄ + H ₂ O) is supplied. In this case, when the phosphoric acid aqueous solution contains silicon, the etching rate of the silicon oxide film is lowered. Thereby, the silicon nitride film is selectively etched.

  Silicon is present in the phosphoric acid aqueous solution, for example, by etching the silicon nitride film with a phosphoric acid aqueous solution or by mixing a concentrated liquid containing silicon fine particles in the phosphoric acid aqueous solution.

(1) Configuration of Substrate Processing Apparatus FIG. 1 is a schematic diagram showing a configuration of a substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 100 mainly includes a processing unit 1, a first tank 5, a second tank 6, a third tank 7, a new liquid supply device 8, and a control unit 9. Further, the processing unit 1 includes a spin chuck 2, a processing liquid nozzle 3, a heating device 4, and a cup CU. In the processing unit 1, the plurality of substrates W are sequentially processed one by one.

  The spin chuck 2 includes a spin motor 2a, a spin base 2b, and a plurality of chuck pins 2c. The spin motor 2a is provided such that the rotation axis is parallel to the vertical direction. The spin base 2b has a disk shape and is attached in a horizontal posture to the upper end portion of the rotation shaft of the spin motor 2a. The plurality of chuck pins 2 c are provided on the upper surface of the spin base 2 b and hold the peripheral edge of the substrate W. The spin motor 2a operates in a state where the plurality of chuck pins 2c hold the substrate W. Thereby, the substrate W rotates around the vertical axis.

  As described above, in this example, the mechanical spin chuck 2 that holds the peripheral edge of the substrate W is used. However, the present invention is not limited to this, and a suction spin chuck that sucks and holds the lower surface of the substrate W may be used instead of the mechanical spin chuck.

  The treatment liquid nozzle 3 and the heating device 4 are provided to be movable between a position above the substrate W held by the spin chuck 2 and a standby position on the side of the substrate W. The treatment liquid nozzle 3 supplies the phosphoric acid aqueous solution supplied from the first tank 5 to the substrate W rotated by the spin chuck 2.

  When the phosphoric acid aqueous solution is supplied from the treatment liquid nozzle 3 to the substrate W, the heating device 4 is disposed at a position facing the upper surface of the substrate W. The heating device 4 includes a lamp heater that generates infrared rays, and heats the substrate W and the processing liquid supplied onto the substrate W by radiant heat. As the lamp heater, for example, a tungsten halogen lamp, a xenon arc lamp, or a graphite heater can be used.

  The heating temperature of the substrate W by the heating device 4 is set to a temperature (for example, 140 ° C. or more and 160 ° C. or less) higher than the boiling point in the phosphoric acid concentration of the phosphoric acid aqueous solution. As a result, the temperature of the phosphoric acid aqueous solution on the substrate W rises to the boiling point at the phosphoric acid concentration, and the etching rate of the silicon nitride film by the phosphoric acid aqueous solution increases.

  On the other hand, when the silicon concentration in the phosphoric acid aqueous solution is within an appropriate range, the etching rate of the silicon oxide film by the phosphoric acid aqueous solution is kept sufficiently lower than the etching rate of the silicon nitride film. As a result, the silicon nitride film on the substrate W is selectively etched as described above.

  A cup CU is provided so as to surround the spin chuck 2. The cup CU descends when the substrate W is loaded into the spin chuck 2 and when the substrate W is unloaded from the spin chuck 2, and rises when the phosphoric acid aqueous solution is supplied to the substrate W.

  At the time of supplying the phosphoric acid aqueous solution to the rotating substrate W, the upper end portion of the cup CU is positioned above the substrate W. Thereby, the phosphoric acid aqueous solution shaken off from the substrate W is received by the cup CU. The aqueous phosphoric acid solution received by the cup CU is sent to the second tank 6 or the third tank 7 as will be described later.

The first tank 5 includes a circulation tank 5a and a storage tank 5b. The circulation tank 5a and the storage tank 5b are arranged so as to be adjacent to each other, and are configured such that the liquid overflowing in one tank (for example, the circulation tank 5a) flows into the other tank (for example, the storage tank 5b). The circulation tank 5a is provided with a phosphoric acid concentration meter S1 and a silicon concentration meter S2. The phosphoric acid concentration meter S1 outputs the phosphoric acid concentration of the phosphoric acid aqueous solution, and the silicon concentration meter S2 outputs the silicon concentration of the phosphoric acid aqueous solution. The storage tank 5b is provided with a liquid level sensor S3 that outputs the liquid level of the phosphoric acid aqueous solution. A DIW (Deionized Water) supply system 91, a nitrogen (N ₂ ) gas supply system 92, and a phosphoric acid aqueous solution supply system 93 are connected to the storage tank 5b.

  A first supply pipe 10 is provided so as to connect the storage tank 5 b of the first tank 5 and the processing liquid nozzle 3 of the processing unit 1. In the first supply pipe 10, a pump 15, a heater 14, a filter 13, a valve 12, and a heater 11 are inserted in this order from the storage tank 5 b toward the treatment liquid nozzle 3.

  A circulation pipe 16 is provided so as to connect the portion of the first supply pipe 10 between the filter 13 and the valve 12 and the circulation tank 5a. A valve 17 is inserted in the circulation pipe 16. A DIW supply system 91 is connected to a portion of the first supply pipe 10 between the heater 11 and the treatment liquid nozzle 3.

  Each of the second and third tanks 6 and 7 has the same configuration as the first tank 5 and includes circulation tanks 6a and 7a and storage tanks 6b and 7b. Each of the circulation tanks 6a and 7a is provided with a phosphoric acid concentration meter S1 and a silicon concentration meter S2. A liquid level sensor S3 is provided in each of the storage tanks 6b and 7b, and a DIW supply system 91, a nitrogen gas supply system 92, and a phosphoric acid aqueous solution supply system 93 are connected thereto.

  A second supply pipe 20 is provided so as to connect the storage tank 5 b of the first tank 5 and the storage tanks 6 b and 7 b of the second and third tanks 6 and 7. The second supply pipe 20 has one main pipe 20a and two branch pipes 20b and 20c. The branch pipes 20b and 20c are connected to the main pipe 20a. The main pipe 20a is connected to the storage tank 5b of the first tank 5, and the two branch pipes 20b and 20c are connected to the storage tanks 6b and 7b of the second and third tanks 6 and 7, respectively.

  In one branch pipe 20b, a pump 24, a heater 23, a filter 22 and a valve 21 are inserted in this order from the storage tank 6b to the main pipe 20a. A circulation pipe 25 is provided so as to connect a portion of the branch pipe 20b between the filter 22 and the valve 21 and the circulation tank 6a. A valve 26 is inserted in the circulation pipe 25.

  In the other branch pipe 20c, a pump 34, a heater 33, a filter 32, and a valve 31 are inserted in this order from the storage tank 7b toward the main pipe 20a. A circulation pipe 35 is provided to connect the portion of the branch pipe 20c between the filter 32 and the valve 31 and the circulation tank 7a. A valve 36 is inserted in the circulation pipe 35.

  A recovery pipe 50 is provided so as to connect the cup CU of the processing unit 1 and the storage tanks 6 b and 7 b of the second and third tanks 6 and 7. The recovery pipe 50 has one main pipe 50a and two branch pipes 50b and 50c. The branch pipes 50b and 50c are connected to the main pipe 50a. The main pipe 50a of the recovery pipe 50 is connected to the cup CU, and the two branch pipes 50b and 50c are connected to the storage tanks 6b and 7b of the second and third tanks 6 and 7, respectively. A valve 51 is inserted in the branch pipe 50b, and a valve 52 is inserted in the branch pipe 50c.

  The new liquid supply device 8 includes a mixing tank 8a and a supply device that supplies the liquid in the mixing tank 8a to the outside. A phosphoric acid aqueous solution supply system 93 and a silicon (Si) concentrate supply system 94 are connected to the new liquid supply device 8. The mixing tank 8a is provided with a silicon concentration meter S2.

  In the mixing tank 8a of the new liquid supply device 8, the phosphoric acid aqueous solution and the silicon concentrate supplied from the phosphoric acid aqueous solution supply system 93 and the silicon concentrate supply system 94 are mixed at a predetermined ratio. As a result, an aqueous phosphoric acid solution having a predetermined silicon concentration (hereinafter referred to as a reference silicon concentration) is generated as a new treatment liquid and maintained at a predetermined temperature. In this example, a liquid in which silicon fine particles are dissolved in a phosphoric acid aqueous solution is used as the silicon concentrate.

  In addition, in the new liquid supply device 8, the silicon concentration in the mixing tank 8a can be adjusted to a value different from the reference silicon concentration. For example, a silicon concentrate is added to the mixing tank 8a in a state where an aqueous phosphoric acid solution having a reference silicon concentration is stored in the mixing tank 8a. Thereby, the silicon concentration in the mixing tank 8a can be made higher than the reference silicon concentration. Further, the phosphoric acid aqueous solution is added to the mixing tank 8a in a state where the phosphoric acid aqueous solution having the reference silicon concentration is stored in the mixing tank 8a. Thereby, the silicon concentration in the mixing tank 8a can be made lower than the reference silicon concentration.

  A third supply pipe 40 is provided so as to connect the new liquid supply device 8 and the storage tanks 6 b and 7 b of the second and third tanks 6 and 7. The third supply pipe 40 has one main pipe 40a and two branch pipes 40b and 40c. The branch pipes 40b and 40c are connected to the main pipe 40a. The main pipe 40a of the third supply pipe 40 is connected to the new liquid supply device 8, and the two branch pipes 40b and 40c are connected to the storage tanks 6b and 7b of the second and third tanks 6 and 7, respectively. A valve 41 is inserted in the branch pipe 40b, and a valve 42 is inserted in the branch pipe 40c.

  The control unit 9 includes a CPU (Central Processing Unit) and a memory, or a microcomputer. A system program is stored in the memory of the control unit 9. The control unit 9 controls the operation of each component of the substrate processing apparatus 100.

  For example, the control unit 9 switches the open / close state of the valves 12, 17, 21, 26, 31, 36, 41, 42, 51, 52 based on the liquid level output from each liquid level sensor S3. Further, the control unit 9 controls the DIW supply system 91, the nitrogen gas supply system 92, and the phosphoric acid aqueous solution supply system 93 based on the phosphoric acid concentration output from each phosphoric acid concentration meter S1. Furthermore, the control unit 9 controls the new liquid supply device 8, the phosphoric acid aqueous solution supply system 93, and the silicon concentrate supply system 94 based on the silicon concentration output from each silicon concentration meter S2.

(2) Operation of Substrate Processing Apparatus A series of operations of the substrate processing apparatus 100 when a plurality of substrates W are processed by the processing unit 1 will be described. FIG. 2 is a time chart showing operation contents related to the first, second and third tanks 5, 6 and 7 of FIG. 3 to 7 are schematic diagrams showing the operation of the substrate processing apparatus 100 at time t1 to time t7 in FIG.

  In the first, second, and third tanks 5, 6, and 7, the first reference height L1 and the second reference height L2 are set in the storage tanks 5b, 6b, and 7b. The first reference height L1 is set near the bottom of the storage tanks 5b, 6b, and 7b, and the second reference height L2 is set higher than the first reference height L1 and near the upper ends of the storage tanks 5b, 6b, and 7b. Is done.

  The first reference height L1 is, for example, the liquid surface height when a liquid having about 1/5 of the maximum capacity that can be stored in each storage tank 5b, 6b, 7b is stored in each storage tank 5b, 6b, 7b. Is set. In addition, the second reference height L2 is set to a liquid level when, for example, about 4/5 of the maximum capacity of each storage tank 5b, 6b, 7b is stored in each storage tank 5b, 6b, 7b. Is done.

  In the initial state, an aqueous phosphoric acid solution having a predetermined phosphoric acid concentration (hereinafter referred to as a reference phosphoric acid concentration) and a reference silicon concentration is stored in the first and second tanks 5 and 6. Yes. In the first and second tanks 5 and 6, the liquid level of the phosphoric acid aqueous solution is maintained at the second reference height L2.

  Further, an aqueous phosphoric acid solution having no reference phosphoric acid concentration and no reference silicon concentration is stored in the third tank 7. In the third tank 7, the liquid level of the phosphoric acid aqueous solution is maintained at the first reference height L1. All the valves 12, 17, 21, 26, 31, 36, 41, 42, 51, 52 shown in FIG. 1 are closed.

  When the power supply of the substrate processing apparatus 100 is turned on from the initial state, the operations of the heaters 11, 14, 23, 33, the pumps 15, 24, 34 and the new liquid supply device 8 of FIG. 1 are started. In this state, the first substrate W is carried into the spin chuck 2 of the processing unit 1. Further, the substrate W is held by the spin chuck 2 and rotated.

  At subsequent time t1 in FIG. 2, the control unit 9 in FIG. 1 opens the valves 12 and 17 in FIG. As a result, the phosphoric acid aqueous solution in the storage tank 5 b is sucked by the pump 15 and sent to the filter 13 through the heater 14 as indicated by a thick arrow A 1 in FIG. The heater 14 heats the phosphoric acid aqueous solution passing through the first supply pipe 10 to a predetermined temperature (for example, 150 ° C.). The filter 13 removes unnecessary precipitates and the like by filtering the phosphoric acid aqueous solution.

  As indicated by a thick arrow A2 in FIG. 3, a part of the phosphoric acid aqueous solution that has passed through the heater 14 and the filter 13 is further heated through the heater 11 and sent to the treatment liquid nozzle 3. Thereby, a phosphoric acid aqueous solution having a reference phosphoric acid concentration and a reference silicon concentration is supplied from the processing liquid nozzle 3 to the substrate W together with DIW. Note that DIW is appropriately supplied from the DIW supply system 91 between the heater 11 and the processing liquid nozzle 3.

  On the other hand, as indicated by a thick arrow A3 in FIG. 3, the remaining phosphoric acid aqueous solution that has passed through the heater 14 and the filter 13 is returned to the circulation tank 5a of the first tank 5 through the circulation pipe 16. In the first tank 5, the phosphoric acid aqueous solution overflowing from the circulation tank 5a flows into the storage tank 5b. Thus, the phosphoric acid aqueous solution in the storage tank 5b is returned to the storage tank 5b through the first supply pipe 10, the circulation pipe 16, and the circulation tank 5a while being heated and filtered. Thereby, the temperature and cleanliness of the phosphoric acid aqueous solution in the storage tank 5b are kept substantially constant.

As described above, the temperature and cleanliness of the phosphoric acid aqueous solution in the storage tank 5b are kept constant by returning a part of the phosphoric acid aqueous solution stored in the storage tank 5b to the storage tank 5b again while heating and filtering. The operation is called circulation temperature control.

  At time t1, the control unit 9 in FIG. 1 further opens the valve 52 in FIG. As a result, as shown by the thick arrow A4 in FIG. 3, the used phosphoric acid aqueous solution recovered by the cup CU of the processing unit 1 is sent to the storage tank 7b of the third tank 7 through the main pipe 50a and the branch pipe 50c. It is done. Thus, the operation | movement which sends the used phosphoric acid aqueous solution supplied to the board | substrate W to the storage tank 7b is called liquid collection | recovery.

  At time t1, the control unit 9 in FIG. 1 further opens the valves 26 and 36 in FIG. Thereby, as shown by thick arrows A5 and A6 in FIG. 3, the same circulating temperature control as that of the first tank 5 is performed in the second tank 6 and the third tank 7 as well.

  Here, when liquid recovery and circulation temperature adjustment are performed in the third tank 7, the phosphoric acid concentration of the phosphoric acid aqueous solution stored in the storage tank 7b is different from the reference phosphoric acid concentration. 1 controls the DIW supply system 91, nitrogen so that the phosphoric acid concentration in the storage tank 7b approaches the reference phosphoric acid concentration based on the output of the phosphoric acid concentration meter S1 of the third tank 7. The gas supply system 92 and the phosphoric acid aqueous solution supply system 93 are controlled.

  For example, the controller 9 controls the DIW supply system 91 so that DIW is supplied to the storage tank 7b when the output from the phosphoric acid concentration meter S1 is higher than the reference phosphoric acid concentration. Thereby, the phosphoric acid density | concentration in the storage tank 7b falls, and it adjusts to reference | standard phosphoric acid density | concentration.

  In addition, when the output from the phosphoric acid concentration meter S1 is lower than the reference phosphoric acid concentration, the control unit 9 supplies a phosphoric acid aqueous solution having a phosphoric acid concentration higher than the reference phosphoric acid concentration to the storage tank 7b. The phosphoric acid aqueous solution supply system 93 is controlled. Thereby, the phosphoric acid concentration in the storage tank 7b increases and is adjusted to the reference phosphoric acid concentration.

  Moreover, the control part 9 controls the nitrogen gas supply system 92 so that nitrogen gas is supplied to the storage tank 7b when the output from the phosphoric acid concentration meter S1 is lower than the reference phosphoric acid concentration. In this case, evaporation of the phosphoric acid aqueous solution in the storage tank 7b is promoted. Thereby, the phosphoric acid concentration in the storage tank 7b increases and is adjusted to the reference phosphoric acid concentration.

  In addition, in order to raise the phosphoric acid concentration in the storage tank 7b, the control part 9 may supply one of the phosphoric acid aqueous solution and nitrogen gas which have a high phosphoric acid concentration to the storage tank 7b, or both. You may supply to the storage tank 7b.

  As described above, the operation of adjusting the phosphoric acid concentration of the phosphoric acid aqueous solution in the storage tank 7b to the reference phosphoric acid concentration is called phosphoric acid concentration adjustment.

  As shown in FIG. 2, the supply of the phosphoric acid aqueous solution to the treatment liquid nozzle 3 and the circulation temperature control are started in the first tank 5 at time t1. Circulation temperature control is also started in the second tank 6 and the third tank 7. In the third tank 7, liquid recovery and phosphoric acid concentration adjustment are started.

  The supply of the phosphoric acid aqueous solution from the first tank 5 to the processing liquid nozzle 3 is continued until the processing of the substrate W is completed. Further, the circulating temperature control in the first tank 5, the second tank 6, and the third tank 7 is also continued until the processing of the substrate W is completed.

  When the liquid level sensor S3 detects that the liquid level in the storage tank 5b of the first tank 5 has fallen by a predetermined height from the second reference height L2, the control unit 9 in FIG. 1 is opened (time t2).

  Thereby, the supply of the phosphoric acid aqueous solution from the second tank 6 to the first tank 5 is started. As shown by the thick arrow A7 in FIG. 4, a part of the phosphoric acid aqueous solution that has passed through the filter 22 through the branch pipe 20b from the storage tank 6b of the second tank 6 is stored in the first tank 5 through the main pipe 20a. It is sent to the tank 5b. Thus, the phosphoric acid aqueous solution having the reference phosphoric acid concentration and the reference silicon concentration is supplied from the second tank 6 to the first tank 5. As a result, the liquid level in the storage tank 5b increases toward the second reference height L2, and the liquid level in the storage tank 6b decreases from the second reference height L2 (the white outline in FIG. 4). See arrow).

  When the liquid level sensor S3 detects that the liquid level in the storage tank 5b of the first tank 5 has reached the second reference height L2, the controller 9 in FIG. Is closed to stop the supply of the phosphoric acid aqueous solution from the second tank 6 to the first tank 5 (time t3).

  The phosphoric acid aqueous solution is supplied from the second tank 6 to the first tank 5 from the time t2 to the time t3. In parallel with this, the third tank 7 performs liquid recovery and phosphoric acid concentration adjustment. Thereby, the liquid level height in the storage tank 7b of the third tank 7 rises from the first reference height L1 (see the white arrow in FIG. 4).

  At time t3, liquid recovery in the third tank 7 is stopped, and liquid recovery in the second tank 6 is started. That is, the control unit 9 closes the valve 52 in FIG. 1 and opens the valve 51. Thereby, the used phosphoric acid aqueous solution collected by the cup CU of the processing unit 1 is sent to the storage tank 6b of the second tank 6 (see the thick arrow A8 in FIG. 5). In the second tank 6, the phosphoric acid concentration is adjusted in parallel with the liquid recovery.

  Here, in the single wafer processing apparatus, a part of the processing liquid is discarded by rinsing or the like. Therefore, it is not possible to collect all the processing liquid used for processing the substrate W. Accordingly, the liquid level in the storage tank 6b is lowered from the second reference height L2 to the first reference height L1 while the liquid level in the storage tank 5b is maintained at the second reference height L2. However, the liquid level in the storage tank 7b does not rise from the first reference height L1 to the second reference height L2.

  Therefore, the control unit 9 of FIG. 1 determines that the liquid level in the storage tank 7b is the second reference height based on the output of the liquid level sensor S3 (FIG. 1) of the third tank 7 and the silicon concentration meter S2. The valve 42 and the new liquid supply device 8 of FIG. 1 are controlled so that the silicon concentration of the phosphoric acid aqueous solution in the storage tank 7b approaches the reference silicon concentration while rising to L2.

  For example, the control unit 9 opens the valve 42 of FIG. 1 when the output from the silicon concentration meter S2 of the third tank 7 is equal to the reference silicon concentration. Thereby, as indicated by a thick arrow A9 in FIG. 5, a phosphoric acid aqueous solution having a reference phosphoric acid concentration and a reference silicon concentration is supplied from the new liquid supply device 8 to the third tank 7. As a result, the liquid level in the storage tank 7b rises to the second reference height L2, and the silicon concentration in the storage tank 7b is maintained at the reference silicon concentration.

  The controller 9 of this example can adjust the silicon concentration in the mixing tank 8a of the new liquid supply device 8 to a value different from the reference silicon concentration based on the silicon concentration meter S2 provided in the new liquid supply device 8. it can.

  Therefore, when the output from the silicon concentration meter S2 of the third tank 7 is lower than the reference silicon concentration, the control unit 9 controls the new liquid supply device 8 so that the silicon concentration in the mixing tank 8a increases. . As a result, a phosphoric acid aqueous solution having a silicon concentration higher than the reference silicon concentration is supplied from the new solution supply device 8 to the third tank 7. As a result, the liquid level in the storage tank 7b rises to the second reference height L2, and the silicon concentration in the storage tank 7b rises and is adjusted to the reference silicon concentration.

  Further, the control unit 9 controls the new liquid supply device 8 so that the silicon concentration in the mixing tank 8a is lowered when the output from the silicon concentration meter S2 of the third tank 7 is higher than the reference silicon concentration. . As a result, a phosphoric acid aqueous solution having a silicon concentration lower than the reference silicon concentration is supplied from the new liquid supply device 8 to the third tank 7. As a result, the liquid level in the storage tank 7b rises to the second reference height L2, and the silicon concentration in the storage tank 7b decreases and is adjusted to the reference silicon concentration.

As described above, it called the operation for adjusting the liquid level in the storage tank 7b to the reference silicon down concentration of silicon down concentration of phosphoric acid aqueous solution with is increased to the second reference height L2 silicon density adjustment.

  At the time of adjusting the silicon concentration, a part of the phosphoric acid aqueous solution stored in the storage tank 7b may be discarded through a waste liquid pipe (not shown). Even in such a case, the phosphoric acid aqueous solution containing silicon is supplied from the new liquid supply device 8 to the storage tank 7b. Accordingly, the shortage of the phosphoric acid aqueous solution used for processing the substrate W is prevented.

  In the silicon concentration adjustment, the phosphoric acid concentration of the phosphoric acid aqueous solution is adjusted together with the silicon concentration. For example, the control unit 9 in FIG. 1 performs DIW so that the phosphoric acid concentration approaches the reference phosphoric acid concentration based on the output from the phosphoric acid concentration meter S1 of the third tank 7 in the same manner as when adjusting the phosphoric acid concentration. The supply system 91, the nitrogen gas supply system 92, and the phosphoric acid aqueous solution supply system 93 are controlled. Thereby, even when the phosphoric acid aqueous solution supplied from the new liquid supply device 8 to the third tank 7 does not have the reference phosphoric acid concentration, the phosphoric acid concentration in the storage tank 7b is adjusted to the reference phosphoric acid concentration.

When the phosphoric acid concentration meter S1 and the silicon concentration meter S2 detect that the phosphoric acid aqueous solution having the reference phosphoric acid concentration and the reference silicon concentration is stored in the storage tank 7b of the third tank 7, the control unit 9 The supply of the phosphoric acid aqueous solution from the new liquid supply device 8 to the third tank 7 is stopped, and the silicon concentration adjustment in the third tank 7 is finished (time t4).

  2 and 5, since the supply of the phosphoric acid aqueous solution from the first tank 5 to the processing unit 1 is continued from time t3 to time t4, the liquid level in the storage tank 5b is increased. Falls from the second reference height L2. Further, since the liquid recovery is continued in the second tank 6, the liquid level in the storage tank 6b rises from the first reference height L1.

  In the present embodiment, the time required from the start of the silicon concentration adjustment to the completion of the silicon concentration adjustment in the second tank 6 and the third tank 7 is determined by the liquid level height in the storage tank 5b due to the processing of the substrate W. This is sufficiently shorter than the time required to descend from the second reference height L2 to the first reference height L1.

  1 is equal to the second reference height L2 and the phosphoric acid concentration and the silicon concentration in the storage tank 7b are the reference phosphoric acid concentration and the reference silicon concentration. The time t4 when the silicon concentration adjustment is completed may be determined by continuing a certain state for a certain period.

  The controller 9 starts supplying a phosphoric acid aqueous solution having a reference phosphoric acid concentration and a reference silicon concentration from the third tank 7 toward the first tank 5 at time t4. Accordingly, as indicated by a thick arrow A10 in FIG. 6, a part of the phosphoric acid aqueous solution that has passed through the filter 32 through the branch pipe 20c from the storage tank 7b of the third tank 7 passes through the main pipe 20a to the first tank. 5 to the storage tank 5b. Thereby, the liquid level height in the storage tank 5b of the first tank 5 rises toward the second reference height L2.

  When it is detected that the liquid level of the first tank 5 is equal to the second reference height L2, the controller 9 supplies the aqueous phosphoric acid solution from the third tank 7 to the first tank 5. Is stopped (time t5). In the second tank 6, from the time t3 to the time t5, the liquid level in the storage tank 6b increases due to the liquid recovery.

  At time t5, the liquid recovery in the second tank 6 is stopped, and the liquid recovery in the third tank 7 is started. That is, the control unit 9 closes the valve 51 in FIG. 1 and opens the valve 52. Thereby, the used phosphoric acid aqueous solution collected by the cup CU of the processing unit 1 is sent to the storage tank 7b of the third tank 7 (see the thick arrow A4 in FIG. 7). In the third tank 7, the phosphoric acid concentration is adjusted in parallel with the liquid recovery.

  Further, from the time t5, the silicon concentration adjustment in the second tank 6 is started. That is, the controller 9 controls the new liquid supply device 8 while opening the valve 41 of FIG. As a result, as indicated by a thick arrow A11 in FIG. 7, the phosphoric acid aqueous solution whose silicon concentration is adjusted is supplied from the new liquid supply device 8 to the second tank 6. Further, the silicon concentration of the phosphoric acid aqueous solution in the storage tank 6b is maintained at the reference silicon concentration.

  When the silicon concentration meter S2 detects that the phosphoric acid aqueous solution having the reference phosphoric acid concentration and the reference silicon concentration is stored in the storage tank 6b of the second tank 6, the controller 9 in FIG. The supply of the phosphoric acid aqueous solution from the apparatus 8 to the second tank 6 is stopped, and the silicon concentration adjustment in the second tank 6 is finished (time t6).

  2 and 7, since the supply of the phosphoric acid aqueous solution from the first tank 5 to the processing unit 1 is continued from time t5 to time t6, the liquid level in the storage tank 5b is increased. Falls from the second reference height L2. Moreover, since liquid recovery is continued in the third tank 7, the liquid level in the storage tank 7b rises from the first reference height L1. In the third tank 7, the phosphoric acid concentration is adjusted in parallel with the liquid recovery.

As shown in FIG. 2, the phosphoric acid aqueous solution is supplied from the second tank 6 toward the first tank 5 from time t6. Accordingly, the liquid level in the storage tank 6b of the second tank 6 is lowered from the second reference height L2, and the liquid level in the storage tank 5b of the first tank 5 is the second reference height. Ascend towards L2. The supply of the phosphoric acid aqueous solution from the second tank 6 to the first tank 5 is performed until the liquid level in the first tank 5 reaches the second reference height L2 (time t7).

  After time t7, the operation from time t3 to time t5 and the operation from time t5 to time t7 are repeated until the processing of the substrate W is stopped. Thereby, in the first tank 5, a phosphoric acid aqueous solution having a reference phosphoric acid concentration and a reference silicon concentration is always maintained.

  In the first tank 5, there is a possibility that a part of water in the phosphoric acid aqueous solution evaporates. In this case, the phosphoric acid concentration and the silicon concentration of the phosphoric acid aqueous solution stored in the storage tank 5b change. Therefore, the control unit 9 may adjust the phosphoric acid concentration in the first tank 5 based on the output of the phosphoric acid concentration meter S1 of the first tank 5. Further, the control unit 9 may output an abnormal signal when the output of the silicon concentration meter S2 of the first tank 5 shows an abnormal value.

  Further, when the phosphoric acid aqueous solution is not supplied to the first tank 5 due to an abnormality of the apparatus, the liquid level in the storage tank 5b may be lower than the first reference height L1. Therefore, the control unit 9 may output an abnormal signal when the output of the liquid level sensor S3 of the first tank 5 becomes lower than the first reference height L1.

(3) Effect In the substrate processing apparatus 100 according to the embodiment of the present invention, the processing liquid used in the processing unit 1 is collected and reused. For this reason, substrate processing can be performed with a small amount of processing liquid. Further, the processing liquid is supplied to the processing unit 1 from the first tank 5 without interruption. For this reason, since the substrate processing apparatus 100 does not generate downtime, the substrate processing can be performed with high productivity.

  By the way, since the rinse liquid etc. are mixed in the process liquid collect | recovered from the process part 1, there exists a problem that a density | concentration is unstable and fluctuates. Therefore, the treatment liquid in the second tank 6 (or the third tank 7) collecting the treatment liquid from the processing unit 1 becomes unstable in phosphoric acid concentration and silicon concentration during the liquid collection period. For this reason, the second tank 6 (or the third tank 7) collecting the processing liquid from the processing unit 1 cannot supply the processing liquid directly to the processing unit 1.

  In the substrate processing apparatus 100, after the collection of the processing liquid from the processing unit 1 is completed, concentration adjustment for a predetermined time (a period from time t5 to time t6 (or a period from time t3 to time t4)) is executed. Thereby, the process liquid adjusted to the reference phosphoric acid concentration and the reference silicon concentration can be supplied from the second tank 6 (or the third tank 7) to the first tank 5.

  If there are only two tanks and the above-described concentration adjustment is performed after the liquid recovery, a period for interrupting either the liquid recovery or the substrate processing will occur.

  FIG. 8 shows a first comparative example in which the above-described concentration adjustment (silicon concentration adjustment including phosphoric acid concentration adjustment) is performed on the processing liquid stored in each tank when there are only two tanks. The two tanks used in the first comparative example are referred to as tank A and tank B. The tank A supplies the processing liquid to the processing unit 1 during the period from time t1 to time t3. The tank B collects the processing liquid from the processing unit 1 from the time t1 to the time t2, and adjusts the silicon concentration and the phosphoric acid concentration of the processing liquid in the tank B while stopping the liquid recovery from the time t2 to the time t3. Do. By adjusting the silicon concentration and the phosphoric acid concentration from time t2 to time t3, the processing liquid in the tank B can be stabilized at the reference silicon concentration and the reference phosphoric acid concentration.

  The tank B supplies the processing liquid to the processing unit 1 from time t3 to time t5. On the other hand, the tank A performs liquid recovery from time t3 to time t4, and performs concentration adjustment while stopping liquid recovery from time t4 to time t5.

  As described above, in the first comparative example, the liquid recovery stop period (period from time t2 to time t3 and period from time t4 to time t5) occurs. Since the processing liquid used in the processing unit 1 during this period is discarded without being collected, the processing liquid cannot be effectively used.

  FIG. 9 is a second comparative example in which the above-described concentration adjustment (silicon concentration adjustment including phosphoric acid concentration adjustment) is performed on the processing liquid stored in each tank when there are only two tanks. Similar to the first comparative example, the two tanks used in the second comparative example are referred to as tank A and tank B. The tank A supplies the processing liquid to the processing unit 1 during a period from time t1 to time t2. The tank B collects the processing liquid from the processing unit 1 during the period from time t1 to time t2. During the period from time t2 to time t3, concentration adjustment in the tank B is executed while the supply of the processing liquid from the tank A to the processing unit 1 is stopped.

  The tank B supplies the processing liquid from the processing unit 1 during the period from time t3 to time t4. The tank A collects the processing liquid from the processing unit 1 during the period from time t3 to time t4. During the period from time t4 to time t5, the concentration adjustment in the tank A is executed while the supply of the processing liquid from the tank B to the processing unit 1 is stopped.

  As described above, in the second comparative example, a downtime (a period from time t2 to time t3 and a period from time t4 to time t5) in which the substrate processing in the processing unit 1 is interrupted occurs. Productivity decreases.

  In the case of the substrate processing apparatus 100 according to the embodiment of the present invention, the stop of the processing liquid recovery does not occur as in the first comparative example. That is, as shown in FIG. 2, the liquid recovery is executed alternately in the second tank 6 and the third tank 7 without interruption. Therefore, the substrate processing apparatus 100 can efficiently use the processing liquid.

  Further, in the case of the substrate processing apparatus 100 according to the embodiment of the present invention, the downtime as in the second comparative example does not occur. That is, as shown in FIG. 2, the first tank 5 continuously supplies the processing liquid toward the processing unit 1. Therefore, the substrate processing apparatus 100 can perform substrate processing with high productivity.

  FIG. 10 is a diagram for explaining the effect of the substrate processing apparatus 100 according to the embodiment of the present invention. FIG. 10A shows operations in the first, second, and third tanks 5, 6, and 7 from time t4 to time t5 in FIG. FIG. 10B shows operations in the first, second, and third tanks 5, 6, and 7 from time t6 to time t7 in FIG.

  As shown in FIGS. 10A and 10B, the operation of supplying the phosphoric acid aqueous solution from the first tank 5 to the processing unit 1 (see the thick solid line arrow) and the second tank 6 or the third tank from the processing unit 1 The liquid recovery to the tank 7 (see the thick dotted line arrow) is performed in parallel. By the supply operation, the phosphoric acid aqueous solution is supplied from the first tank 5 to the treatment liquid nozzle 3 of FIG. Further, the phosphoric acid aqueous solution is recovered from the processing unit 1 to the second tank 6 or the third tank 7 by the liquid recovery. Further, the silicon concentration in the third tank 7 or the second tank 6 is adjusted by adjusting the silicon concentration.

  In this case, the phosphoric acid aqueous solution recovered from the processing unit 1 is not supplied to the tank in which the silicon concentration is adjusted. Therefore, in a tank in which the silicon concentration is adjusted, the silicon concentration can be adjusted accurately.

  As shown in FIGS. 10A and 10B, after the silicon concentration adjustment is completed, the adjusted processing liquid is supplied to the processing unit 1 through the first tank 5 (see the thick one-dot chain line arrow). Thereby, the substrate W can be processed with the phosphoric acid aqueous solution whose concentration is accurately adjusted. Further, after the liquid recovery is completed, the tank in which the liquid recovery is performed is changed to a silicon concentration adjustment tank. Thereby, the silicon concentration of the recovered phosphoric acid aqueous solution can be adjusted accurately.

  In this way, it is possible to accurately adjust the silicon concentration of the phosphoric acid aqueous solution without stopping the supply operation and the liquid recovery of the phosphoric acid aqueous solution to the processing unit 1. As a result, it is possible to perform uniform processing with high accuracy while preventing a reduction in the processing efficiency of the substrate W.

  In addition, since the recovered phosphoric acid aqueous solution is not supplied to the first tank 5 of this example, and the adjusted phosphoric acid aqueous solution is supplied, contamination of the first tank 5 is prevented, and The phosphoric acid concentration and the silicon concentration of the phosphoric acid aqueous solution in one tank 5 are kept constant.

(4) Other Embodiments (4-1) In the above embodiment, the first tank 5 is used only for supplying the phosphoric acid aqueous solution to the processing unit 1. The second tank 6 and the third tank 7 are used for collecting the phosphoric acid aqueous solution and adjusting the silicon concentration and phosphoric acid concentration of the phosphoric acid aqueous solution.

Not limited to this, the phosphoric acid aqueous solution may be supplied to the processing unit 1 from each of the first tank 5, the second tank 6, and the third tank 7. Each of the first tank 5, the second tank 6, and the third tank 7 is used for recovering the phosphoric acid aqueous solution and adjusting the silicon concentration and phosphoric acid concentration of the phosphoric acid aqueous solution. Also good.

  FIG. 11 is a schematic diagram showing a configuration of a substrate processing apparatus according to another embodiment. The substrate processing apparatus 100 in FIG. 11 has the same configuration as the substrate processing apparatus 100 in FIG. 1 except for the following points.

  As shown in FIG. 11, in this example, the main pipe 20 a of the second supply pipe 20 of FIG. 1 is connected to a portion of the first supply pipe 10 between the valve 12 and the heater 11. Further, as the recovery pipe 50, a pipe having one main pipe 50a and three branch pipes 50b, 50c, 50d is used. The branch pipes 50b, 50c, 50d are connected to the main pipe 50a. The main pipe 50a of the recovery pipe 50 is connected to the cup CU, and the three branch pipes 50d, 50b, 50c are connected to the storage tanks 5b, 6b, 7b of the first, second, and third tanks 5, 6, 7, respectively. Is done. A valve 51 is inserted in the branch pipe 50b, a valve 52 is inserted in the branch pipe 50c, and a valve 53 is inserted in the branch pipe 50d.

  As the third supply pipe 40, a pipe having one main pipe 40a and three branch pipes 40b, 40c, and 40d is used. The branch pipes 40b and 40c are connected to the main pipe 40a. The main pipe 40a of the third supply pipe 40 is connected to the new liquid supply device 8, and the two branch pipes 40b and 40c are connected to the storage tanks 6b and 7b of the second and third tanks 6 and 7, respectively. A valve 41 is inserted in the branch pipe 40b, and a valve 42 is inserted in the branch pipe 40c.

  The branch pipe 40 d is connected to a portion of the branch pipe 40 b on the upstream side of the valve 41. The branch pipe 40 d is connected to the storage tank 5 b of the first tank 5. A valve 43 is inserted in the branch pipe 40d.

  With the above configuration, in the substrate processing apparatus 100 of this example, the first, second, and third tanks 5, 6, and 6 are opened by opening one of the valves 12, 21, and 31 and closing the other valves. The phosphoric acid aqueous solution stored in 7 can be supplied to the processing unit 1.

  Further, by opening one of the valves 51, 52, and 53 and closing the other valves, the phosphoric acid aqueous solution recovered by the cup CU of the processing unit 1 is used for the first, second, and third tanks 5, 6 , 7 can be selectively supplied. That is, liquid recovery can be performed in each of the first, second, and third tanks 5, 6, and 7.

  Further, by opening one of the valves 41, 42, and 43 and closing the other valves, the phosphoric acid aqueous solutions whose silicon concentration and phosphoric acid concentration are adjusted by the new liquid supply device 8 are first, second and second. One of the three tanks 5, 6 and 7 can be selectively supplied. That is, the silicon concentration can be adjusted in each of the first, second, and third tanks 5, 6, and 7.

  FIG. 12 is a diagram for explaining the effect of the substrate processing apparatus according to another embodiment. FIG. 12A shows the operation of supplying the phosphoric acid aqueous solution from the first tank 5 to the processing unit 1 (see the thick solid line arrow) and the liquid recovery from the processing unit 1 to the second tank 6 (thickness in FIG. 12). An example is shown in which the dotted arrows are performed in parallel.

  FIG. 12B shows the operation of supplying the phosphoric acid aqueous solution from the third tank 7 to the processing unit 1 (see thick solid arrow) and the liquid recovery from the processing unit 1 to the first tank 5 (see thick dotted arrow). ) Is performed in parallel.

  FIG. 12C shows the operation of supplying the phosphoric acid aqueous solution from the second tank 6 to the processing unit 1 (see thick solid arrow) and the liquid recovery from the processing unit 1 to the third tank 7 (see thick dotted arrow). ) Is performed in parallel.

  In this example, as shown in FIGS. 12A to 12C, phosphoric acid is supplied from any one of the first, second, and third tanks 5, 6, and 7 to the treatment liquid nozzle 3 in FIG. The aqueous solution is supplied, and the phosphoric acid aqueous solution is recovered from the processing unit 1 to another tank. Further, silicon concentration adjustment including adjustment of phosphoric acid concentration is performed in a tank in which supply operation and liquid recovery are not performed. Thereby, the silicon concentration and the phosphoric acid concentration can be adjusted accurately.

  After completion of the silicon concentration adjustment, the adjusted phosphoric acid aqueous solution is supplied to the processing unit 1 from the tank used for the silicon concentration adjustment. Thereby, the substrate W can be processed with the phosphoric acid aqueous solution whose concentration is accurately adjusted. Further, after the liquid recovery is completed, the tank in which the liquid recovery is performed is changed to a silicon concentration adjustment tank. Thereby, the silicon concentration of the recovered phosphoric acid aqueous solution can be adjusted accurately.

  In this manner, the silicon concentration and phosphoric acid concentration of the phosphoric acid aqueous solution can be accurately adjusted without stopping the supply operation and the liquid recovery of the phosphoric acid aqueous solution to the processing unit 1. As a result, it is possible to perform uniform processing with high accuracy while preventing a reduction in the processing efficiency of the substrate W.

  (4-2) In the above embodiment, a phosphoric acid aqueous solution, which is a chemical solution, is used as the treatment liquid, and the phosphoric acid concentration and the silicon concentration of the phosphoric acid aqueous solution are adjusted. The treatment liquid is not limited to this, and other chemical liquids that require concentration adjustment according to the processing content of the substrate W may be used.

Other chemical solutions include, for example, buffered hydrofluoric acid (BHF), dilute hydrofluoric acid (DHF), hydrofluoric acid (hydrofluoric water: HF), aqueous solutions such as hydrochloric acid, sulfuric acid, nitric acid, acetic acid, oxalic acid, or aqueous ammonia, Alternatively, a mixed solution thereof can be used. Examples of the mixed solution include a mixed solution (SPM) of sulfuric acid (H ₂ SO ₄ ) and hydrogen peroxide solution (H ₂ O ₂ ) heated to high temperature, a mixed solution of ammonia and hydrogen peroxide solution ( SC1) or a mixed solution (SC2) of hydrochloric acid (HCl) and hydrogen peroxide water can be used.

  Even when these chemical solutions are used, the concentration of a specific component in the chemical solution is adjusted in a tank in which no liquid is collected. Thereby, accurate concentration adjustment of the chemical solution becomes possible.

  (4-3) In the processing section 1, the first, second and third tanks 5, 6, and 7 are used as tanks for storing the phosphoric acid aqueous solution. The substrate processing apparatus 100 is not limited to this, and a larger number of tanks may be provided.

  (4-4) In the processing section 1, the processing liquid nozzle 3 that supplies the phosphoric acid aqueous solution to the substrate W is provided. In addition to this, the processing unit 1 may be provided with a rinsing liquid nozzle for supplying a rinsing liquid to the substrate W, or another processing liquid nozzle for supplying a chemical other than the phosphoric acid aqueous solution to the substrate W. It may be provided. Thereby, the processing content of the substrate W in the processing unit 1 is diversified.

  Examples of the rinsing liquid include pure water, carbonated water, ozone water, magnetic water, reduced water (hydrogen water) or ionic water, or an organic solvent such as IPA (isopropyl alcohol).

  (4-5) In the above embodiment, in the silicon concentration adjustment, the silicon concentration of the phosphoric acid aqueous solution used for the processing of the substrate W is adjusted to the reference silicon concentration. Not limited to this, in the silicon concentration adjustment, the silicon concentration of the phosphoric acid aqueous solution may be adjusted within a predetermined range including the reference silicon concentration. In this case, the time required for the silicon concentration adjustment can be shortened by increasing the range to be adjusted as necessary.

(5) Correspondence between each component of claim and each part of embodiment The following describes an example of a correspondence between each component of the claim and each component of the embodiment. It is not limited to examples.

  In the above embodiment, the substrate processing apparatus 100 is an example of a substrate processing apparatus, the processing liquid nozzle 3 is an example of a processing liquid nozzle, the processing unit 1 is an example of a processing unit, and the first tank 5 is This is an example of a supply tank, the second tank 6 is an example of a recovery tank, the third tank 7 is an example of an adjustment tank, and the first, second and third tanks 5, 6, 7 is an example of a plurality of tanks.

  The supply operation of the phosphoric acid aqueous solution to the treatment liquid nozzle 3 is an example of the supply operation, the liquid recovery operation is an example of the recovery operation, and the silicon concentration adjustment including adjustment of the phosphoric acid concentration is an example of the adjustment operation. , First supply pipe 10, pumps 15, 24, 34, valves 12, 17, 21, 26, 31, 36, 41, 42, 43, 51, 52, 53, circulation pipes 16, 25, 35, second The supply pipe 20, the third supply pipe 40, and the recovery pipe 50 are examples of the path configuration unit.

  The first, second, and third tanks 5, 6, and 7 are examples of the first, second, and third tanks, respectively. The first supply pipe 10, the valve 12, and the pump 15 in FIG. 1 is an example of a first processing liquid supply system, the recovery pipe 50 and valves 51 and 52 of FIG. 1 are an example of the processing liquid recovery system of claim 3, and the new liquid supply device 8 is an example of a concentration adjusting device. The second supply pipe 20, the valves 21, 31 and the pumps 24, 34 in FIG. 1 are examples of the second processing liquid supply system, and the first supply pipe 10, the valves 12, 21, 31, in FIG. The pumps 15, 24, 34 and the second supply pipe 20 are examples of the processing liquid supply system, and the recovery pipe 50 and the valves 51, 52, 53 of FIG. 11 are examples of the processing liquid recovery system. Further, the silicon nitride film is an example of the first film, and the silicon oxide film is an example of the second film.

As each constituent element in the claims, various other constituent elements having configurations or functions described in the claims can be used.
(6) Reference form
(6-1) A substrate processing apparatus according to a first embodiment includes a processing unit including a processing liquid nozzle that supplies a processing liquid to a substrate, and a plurality of tanks including a supply tank, a recovery tank, and an adjustment tank. A supply operation for supplying the processing liquid from the supply tank to the processing liquid nozzle, a recovery operation for recovering the processing liquid from the processing unit to the recovery tank, and an adjustment operation for adjusting the concentration of the processing liquid stored in the adjustment tank. And a path configuration unit that configures the path of the processing liquid to be performed in parallel, and the path configuration unit changes the recovery tank to the adjustment tank after the end of the recovery operation, and after the end of the adjustment operation, The path of the processing liquid is changed so that the adjusted processing liquid is supplied to the processing unit.
In the substrate processing apparatus, the supply operation and the recovery operation are performed in parallel. The processing liquid is supplied from the supply tank to the processing liquid nozzle by the supply operation, and the processing liquid is recovered from the processing unit to the recovery tank by the recovery operation. Further, the concentration of the processing liquid stored in the adjustment tank is adjusted by the adjustment operation.
In this case, the processing liquid recovered from the processing unit is not supplied to the adjustment tank. Therefore, the concentration of the processing liquid can be accurately adjusted in the adjustment tank. After the adjustment operation, the processing liquid adjusted in the adjustment tank is supplied to the processing unit. Here, the adjusted processing liquid is supplied from the adjustment tank to the processing liquid nozzle through the supply tank, or is supplied from the adjustment tank to the processing liquid nozzle. Thereby, the substrate can be processed with the processing liquid whose concentration is accurately adjusted. Further, after the collection operation is completed, the collection tank is changed to an adjustment tank. Thereby, the density | concentration of the process liquid collect | recovered by collection | recovery operation | movement can be adjusted correctly.
In this way, it is possible to accurately adjust the concentration of the processing liquid without stopping the supply operation and the recovery operation. As a result, it is possible to perform uniform processing with high accuracy while preventing a reduction in substrate processing efficiency.
(6-2) The path configuration unit supplies the adjusted processing liquid from the adjustment tank to the supply tank after the adjustment operation is completed, and collects the adjustment tank after supplying the processing liquid to the supply tank. You may change the path | route of a process liquid so that it may change to a tank.
In this case, after the adjustment operation is completed, the adjusted processing liquid is supplied to the supply tank. Thereby, the adjusted processing liquid is supplied from the adjusting tank to the processing liquid nozzle through the supply tank. Further, the adjustment tank is changed to a recovery tank, and the recovery tank is changed to an adjustment tank. Thereby, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation. In addition, since the recovered processing liquid is not supplied to the supply tank but the adjusted processing liquid is supplied, contamination of the supply tank is prevented and the concentration of the processing liquid in the supply tank is reduced. Kept constant.
(6-3) The plurality of tanks include a first tank, a second tank, and a third tank, the first tank is a supply tank, and either the second tank or the third tank is a recovery tank. Is set, and the other of the second and third tanks is set as an adjustment tank, and the path configuration unit performs the supply operation of supplying the processing liquid from the first tank to the processing liquid nozzle. A supply system; a treatment liquid recovery system for performing a recovery operation for selectively recovering the treatment liquid from the processing unit to one of the second and third tanks; and the other tank of the second and third tanks. A concentration adjusting device that performs an adjustment operation for adjusting the concentration of the processing liquid stored in the second tank, and a second tank that supplies the adjusted processing liquid from the other tank to the first tank after the adjustment operation by the concentration adjusting device is completed. Processing liquid supply system, including processing liquid supply system The collecting operation from the processing unit to the second tank and the collecting operation from the processing unit to the third tank are alternately performed, and the concentration adjusting device performs the adjusting operation in the third tank and the adjusting operation in the second tank. You may carry out alternately.
In this case, the first tank is used as a supply tank. Thereby, the supply operation from the first tank to the processing liquid nozzle is performed by the first processing liquid supply system. The second and third tanks are alternately set as a recovery tank and an adjustment tank. Thereby, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation.
(6-4) The path forming unit changes the adjustment tank to the supply tank after the end of the adjustment operation and changes the supply tank to the recovery tank after the end of the supply operation. May be changed.
In this case, after the adjustment operation is completed, the adjustment tank is changed to a supply tank. Thereby, the adjusted processing liquid is supplied from the supply tank after the change to the processing liquid nozzle. In addition, after the supply operation is completed, the supply tank is changed to a recovery tank. Thereby, the processing liquid is recovered from the processing unit to the changed recovery tank. Further, after the collection operation is completed, the collection tank is changed to an adjustment tank. As a result, the concentration of the treatment liquid is adjusted in the changed adjustment tank. In this way, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation.
(6-5) The plurality of tanks include first, second, and third tanks, and any one of the first, second, and third tanks is set as a supply tank, and the first, second, Alternatively, any other one of the third tanks is set as a recovery tank, and any one of the first, second, or third tanks is set as an adjustment tank. A treatment liquid supply system that performs a supply operation of supplying the treatment liquid from the first, second, or third tank set to the treatment tank to the treatment liquid nozzle, and a first, second that is set from the treatment unit to the recovery tank. A processing liquid recovery system for performing a recovery operation of selectively recovering the processing liquid in the second or third tank, and the concentration of the processing liquid stored in the first, second, or third tank set in the adjustment tank Including a concentration adjusting device that performs an adjusting operation for adjusting the processing liquid supply The supply operation from the first tank to the treatment liquid nozzle, the supply operation from the third tank to the treatment liquid nozzle, and the supply operation from the second tank to the treatment liquid nozzle are sequentially performed. The recovery operation from the processing unit to the second tank, the recovery operation from the processing unit to the first tank, and the recovery operation from the processing unit to the third tank are sequentially performed. The adjustment operation, the adjustment operation in the second tank, and the adjustment operation in the first tank may be performed in order.
In this case, each of the first, second, and third tanks is sequentially used as a supply tank, a recovery tank, and an adjustment tank. Thereby, the concentration of the processing liquid can be accurately adjusted without interrupting the supply operation and the recovery operation.
(6-6) The substrate includes a first film formed of the first material and a second film formed of the second material, and the processing liquid uses the first material as the second material. The adjustment operation may include a process of adjusting the concentration of the component in the processing liquid.
In this case, the component that selectively etches the first material at a higher rate than the second material is adjusted by the adjusting operation. This makes it possible to accurately remove the first film of the first and second films and leave the second film.
(6-7) The first material contains silicon nitride, the second material contains silicon oxide, the treatment liquid is a solution containing silicon and phosphoric acid, and the adjusting operation is performed by adjusting the concentration of silicon in the solution. Processing to adjust may be included.
Silicon suppresses the etching rate of silicon oxide. Thus, the first film can be selectively removed from the first film containing silicon nitride and the second film containing silicon oxide by supplying the treatment liquid to the substrate.
(6-8) The substrate processing method according to the second embodiment is a substrate processing method using a substrate processing apparatus, and the substrate processing apparatus includes a processing liquid nozzle for supplying a processing liquid to the substrate, and a supply tank. A plurality of tanks including an adjustment tank and a recovery tank, and the substrate processing method recovers the processing liquid from the supply tank to the recovery tank, a supply operation of supplying the processing liquid from the supply tank to the processing liquid nozzle A step of performing a collection operation and an adjustment operation for adjusting the concentration of the processing liquid stored in the adjustment tank in parallel; a step of changing the collection tank to the adjustment tank after the completion of the collection operation; Changing the path of the processing liquid so that the adjusted processing liquid is supplied to the processing unit after completion.
In the substrate processing method, the supply operation and the recovery operation are performed in parallel. The processing liquid is supplied from the supply tank to the processing liquid nozzle by the supply operation, and the processing liquid is recovered from the processing unit to the recovery tank by the recovery operation. Further, the concentration of the processing liquid stored in the adjustment tank is adjusted by the adjustment operation.
In this case, the processing liquid recovered from the processing unit is not supplied to the adjustment tank. Therefore, the concentration of the processing liquid can be accurately adjusted in the adjustment tank. After the adjustment operation, the processing liquid adjusted in the adjustment tank is supplied to the processing unit. Here, the adjusted processing liquid is supplied from the adjustment tank to the processing liquid nozzle through the supply tank, or is supplied from the adjustment tank to the processing liquid nozzle. Thereby, the substrate can be processed with the processing liquid whose concentration is accurately adjusted. Further, after the collection operation is completed, the collection tank is changed to an adjustment tank. Thereby, the density | concentration of the process liquid collect | recovered by collection | recovery operation | movement can be adjusted correctly.
In this way, it is possible to accurately adjust the concentration of the processing liquid without stopping the supply operation and the recovery operation. As a result, it is possible to perform uniform processing with high accuracy while preventing a reduction in substrate processing efficiency.

  The present invention can be effectively used for processing a substrate.

DESCRIPTION OF SYMBOLS 1 Processing part 2 Spin chuck 2a Spin motor 2b Spin base 2c Chuck pin 3 Process liquid nozzle 4 Heating device 5 1st tank 5a, 6a, 7a Circulation tank 5b, 6b, 7b Storage tank 6 2nd tank 7 3rd tank Tank 8 New liquid supply device 9 Control unit 10 First supply pipe 11, 14, 23, 33 Heater 12, 17, 21, 26, 31, 36, 41, 42, 43, 51, 52, 53 Valve 13, 22 , 32 Filter 15, 24, 34 Pump 16, 25, 35 Circulation pipe 20 Second supply pipe 20a, 40a, 50a Main pipe 20b, 20c, 40b, 40c, 40d, 50b, 50c, 50d Branch pipe 40 Third supply Piping 50 Recovery piping 91 DIW supply system 92 Nitrogen gas supply system 93 Phosphoric acid aqueous solution supply system 94 Silicon concentrate supply system 100 Substrate Management unit CU cup S1 phosphate concentration meter S2 silicon concentration meter S3 level sensor W substrate

Claims (6)

A processing unit including a processing liquid nozzle for supplying a processing liquid to the substrate;
A plurality of tanks including a supply tank, a recovery tank and an adjustment tank;
Supply operation for supplying the processing liquid from the supply tank to the processing liquid nozzle, recovery operation for recovering the processing liquid from the processing unit to the recovery tank, and adjustment of the concentration of the processing liquid stored in the adjustment tank And a path configuration unit that configures the path of the processing liquid so that the adjustment operation to be performed is performed in parallel,
The path component is
After the end of the previous SL recovery operation, the recovery tank so as to change the control tank, and change the path of the processing solution,
After the end of the previous SL adjustment operation, the conditioned process liquid is supplied to the supply tank from the control tank, so that the processing solution which is adjusted is supplied to the processing unit to change the path of the processing solution ,
After supplying the treatment liquid to the supply tank, change the treatment liquid path so that the adjustment tank is changed to the recovery tank,
The plurality of tanks include first, second and third tanks,
The first tank is the supply tank;
Either one of the second or third tank is set as the recovery tank,
One of the second and third tanks is set as the adjustment tank,
The path component is
A first treatment liquid supply system that performs the supply operation of supplying a treatment liquid from the first tank to the treatment liquid nozzle;
A processing liquid recovery system for performing the recovery operation for selectively recovering the processing liquid from the processing unit to one of the second and third tanks;
A concentration adjusting device that performs the adjusting operation for adjusting the concentration of the processing liquid stored in the other tank of the second and third tanks;
A second processing liquid supply system that supplies the adjusted processing liquid from the other tank to the first tank after the adjustment operation by the concentration adjusting device is completed;
The processing liquid recovery system alternately performs the recovery operation from the processing unit to the second tank and the recovery operation from the processing unit to the third tank,
The concentration adjusting apparatus is a substrate processing apparatus that alternately performs the adjustment operation in the third tank and the adjustment operation in the second tank . A processing unit including a processing liquid nozzle for supplying a processing liquid to the substrate;
A plurality of tanks including a supply tank, a recovery tank and an adjustment tank;
Supply operation for supplying the processing liquid from the supply tank to the processing liquid nozzle, recovery operation for recovering the processing liquid from the processing unit to the recovery tank, and adjustment of the concentration of the processing liquid stored in the adjustment tank And a path configuration unit that configures the path of the processing liquid so that the adjustment operation to be performed is performed in parallel,
The path component is
After the end of the recovery operation, change the treatment liquid path so that the recovery tank is changed to the adjustment tank,
After completion of the adjustment operation, the adjustment tank is changed to the supply tank, and the path of the treatment liquid is changed so that the adjusted treatment liquid is supplied to the treatment unit,
After the supply operation is completed, the processing liquid path is changed so that the supply tank is changed to the recovery tank,
The plurality of tanks include first, second and third tanks,
Any one of the first, second or third tank is set as the supply tank,
Any one of the first, second or third tank is set as the recovery tank;
Any one of the first, second, or third tank is set as the adjustment tank,
The path component is
A treatment liquid supply system for performing the supply operation of supplying the treatment liquid to the treatment liquid nozzle from the first, second or third tank set in the supply tank;
A processing liquid recovery system for performing the recovery operation for selectively recovering the processing liquid from the processing unit to the first, second or third tank set in the recovery tank;
A concentration adjusting device that performs the adjusting operation for adjusting the concentration of the processing liquid stored in the first, second, or third tank set in the adjustment tank;
The treatment liquid supply system includes the supply operation from the first tank to the treatment liquid nozzle, the supply operation from the third tank to the treatment liquid nozzle, and the treatment liquid nozzle from the second tank. Sequentially performing the supply operation to
The processing liquid recovery system includes the recovery operation from the processing unit to the second tank, the recovery operation from the processing unit to the first tank, and the recovery from the processing unit to the third tank. Move in order,
The concentration adjusting device, wherein the adjustment operation in the third tank, wherein the adjustment operation in the second tank, and cormorants sequentially row the adjustment operation in the first tank, board processor. The substrate includes a first film formed of a first material and a second film formed of a second material,
The treatment liquid includes a component that selectively etches the first material at a higher rate than the second material;
The adjustment operation includes a process of adjusting the concentration of the component in the treatment liquid, a substrate processing apparatus according to claim 1 or 2 wherein. The first material comprises silicon nitride and the second material comprises silicon oxide;
The treatment liquid is a solution containing silicon and phosphoric acid,
The substrate processing apparatus according to claim 3 , wherein the adjustment operation includes a process of adjusting a concentration of silicon in the solution. A substrate processing method using a substrate processing apparatus,
The substrate processing apparatus includes:
A processing unit including a processing liquid nozzle for supplying a processing liquid to the substrate;
A plurality of tanks including a supply tank, an adjustment tank and a recovery tank;
The substrate processing method includes:
Supply operation for supplying the processing liquid from the supply tank to the processing liquid nozzle, recovery operation for recovering the processing liquid from the processing unit to the recovery tank, and adjustment of the concentration of the processing liquid stored in the adjustment tank Including the step of performing the adjustment operation to be performed in parallel,
Performing the supply operation, the recovery operation and the adjustment operation in parallel,
A step of changing a route of the treatment liquid so as to change the recovery tank to the adjustment tank after the end of the recovery operation;
After completion of the adjustment operation, supplying the adjusted processing liquid from the adjustment tank to the supply tank, and changing the path of the processing liquid so that the adjusted processing liquid is supplied to the processing unit When,
Changing the path of the treatment liquid so that the adjustment tank is changed to the recovery tank after the supply of the treatment liquid to the supply tank,
The plurality of tanks include first, second and third tanks,
The first tank is the supply tank;
Either one of the second or third tank is set as the recovery tank,
One of the second and third tanks is set as the adjustment tank,
The supply operation is performed by supplying a processing liquid from the first tank to the processing liquid nozzle,
The recovery operation is performed by selectively recovering the processing liquid from the processing unit to one of the second and third tanks,
The adjustment operation is performed by adjusting the concentration of the processing liquid stored in the other tank of the second and third tanks,
Performing the supply operation, the recovery operation and the adjustment operation in parallel,
Supplying the adjusted processing liquid from the other tank to the first tank after completion of the adjusting operation;
Alternately performing the recovery operation from the processing unit to the second tank and the recovery operation from the processing unit to the third tank;
A substrate processing method further comprising: alternately performing the adjustment operation in the third tank and the adjustment operation in the second tank . A substrate processing method using a substrate processing apparatus,
  The substrate processing apparatus includes:
  A processing unit including a processing liquid nozzle for supplying a processing liquid to the substrate;
  A plurality of tanks including a supply tank, an adjustment tank and a recovery tank;
  The substrate processing method includes:
  Supply operation for supplying the processing liquid from the supply tank to the processing liquid nozzle, recovery operation for recovering the processing liquid from the processing unit to the recovery tank, and adjustment of the concentration of the processing liquid stored in the adjustment tank Including the step of performing the adjustment operation to be performed in parallel,
  Performing the supply operation, the recovery operation and the adjustment operation in parallel,
  A step of changing a path of the processing liquid so as to change the recovery tank to the adjustment tank after the recovery operation is completed;
  After completion of the adjustment operation, changing the adjustment tank to the supply tank, and changing the path of the treatment liquid so that the adjusted treatment liquid is supplied to the treatment unit;
  Changing the path of the processing liquid so as to change the supply tank to the recovery tank after the supply operation is completed,
  The plurality of tanks include first, second and third tanks,
  Any one of the first, second or third tank is set as the supply tank,
  Any one of the first, second or third tank is set as the recovery tank;
  Any one of the first, second, or third tank is set as the adjustment tank,
  The supply operation is performed by supplying a treatment liquid from the first, second, or third tank set in the supply tank to the treatment liquid nozzle,
  The recovery operation is performed by selectively recovering the processing liquid from the processing unit to the first, second or third tank set in the recovery tank,
  The adjustment operation is performed by adjusting the concentration of the processing liquid stored in the first, second or third tank set in the adjustment tank,
  Performing the supply operation, the recovery operation and the adjustment operation in parallel,
  The supply operation from the first tank to the treatment liquid nozzle, the supply operation from the third tank to the treatment liquid nozzle, and the supply operation from the second tank to the treatment liquid nozzle are sequentially performed. Steps to do,
  Sequentially performing the recovery operation from the processing unit to the second tank, the recovery operation from the processing unit to the first tank, and the recovery operation from the processing unit to the third tank;
  The substrate processing method further comprising: sequentially performing the adjustment operation in the third tank, the adjustment operation in the second tank, and the adjustment operation in the first tank.

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