CN113066875A - Double-sided solar cell and photovoltaic module - Google Patents
Double-sided solar cell and photovoltaic module Download PDFInfo
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- CN113066875A CN113066875A CN201911295199.4A CN201911295199A CN113066875A CN 113066875 A CN113066875 A CN 113066875A CN 201911295199 A CN201911295199 A CN 201911295199A CN 113066875 A CN113066875 A CN 113066875A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 230000005684 electric field Effects 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 13
- 239000004332 silver Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Photovoltaic Devices (AREA)
Abstract
The invention discloses a double-sided solar cell and a photovoltaic module, wherein the double-sided solar cell comprises a silicon wafer and a back electrode arranged on the back of the silicon wafer, the back electrode comprises a plurality of bonding pad groups arranged at intervals along a first direction, each bonding pad group comprises a plurality of bonding pads distributed at intervals along a second direction perpendicular to the first direction, and the back electrode also comprises four electrode sub-grids which are connected to the bonding pads and extend towards four different quadrants in a coordinate system which takes the bonding pads as an origin, takes a straight line extending along the first direction as a transverse axis and takes a straight line extending along the second direction as a longitudinal axis; based on the specific design structure of the back electrode, the transmission path of the current on the back surface of the double-sided solar cell can be effectively optimized, and the cell efficiency of the double-sided solar cell can be further effectively improved.
Description
Technical Field
The invention relates to the technical field of solar photovoltaics, in particular to a double-sided solar cell and a photovoltaic module.
Background
A bifacial solar cell is a photovoltaic device that can receive light on both the front and back sides to produce an electrical current. The double-sided module manufactured by the double-sided solar cell can generate electricity on the back, so that the total generated energy can be greatly increased compared with a single-sided battery module. Referring to fig. 1, a double-sided solar cell in the prior art generally includes a silicon wafer 100 ', and a silver electrode and an aluminum back field disposed on the back of the silicon wafer 100'. Wherein, the silver electrode comprises a plurality of intermittent silver main grids 200' which are arranged in parallel at intervals; the aluminum back field comprises a plurality of aluminum grid lines 31 'which are distributed in parallel at intervals along the length direction of the silver main grid 200' and a plurality of aluminum main grids 32 'which are used for connecting with a plurality of discontinuous parts of the silver electrode 200' in series.
Based on the structure of the conventional double-sided solar cell, referring to fig. 2, the method for transmitting current from the back aluminum gate line 31 'to the silver main gate 200' mainly includes two methods: the first is that the collected aluminum grid lines 31 'are directly converged to the silver main grid 200', and the farthest path of the current transmitted from the corresponding aluminum grid line 31 'to the silver main grid 200' is half the length of the aluminum grid line 31 'between two adjacent silver main grids 200'; the other is that the collected current is converged to the aluminum main grid 32 ' by the aluminum grid line 31 ' and then transmitted to the silver main grid 200 ', and the farthest path of the current transmitted from the corresponding aluminum grid line 31 ' to the silver main grid 200 ' is larger than that of the first mode. In the prior art, the aluminum grid lines 31 'and the aluminum main grids 32' both have larger resistivity, and the transmission of the current in the aluminum grid lines 31 'or the aluminum main grids 32' for a longer distance is not beneficial to improving the cell efficiency of the double-sided solar cell.
In view of the above, it is necessary to provide a technical solution to solve the above technical problems.
Disclosure of Invention
The present invention is directed to at least one of the technical problems of the prior art, and to achieve the above object, the present invention provides a bifacial solar cell, which is specifically designed as follows.
The utility model provides a two-sided solar cell, includes the silicon chip and set up in the back electrode at the silicon chip back, the back electrode includes a plurality of pad groups that set up along first direction interval, each pad group includes a plurality of edge perpendicular to the pad of the second direction interval distribution of first direction use the pad is the origin, with along the straight line that first direction extends is the cross axle, with along in the coordinate system of straight line that the second direction extends is the axis of ordinates, the back electrode still includes four all be connected to this the pad just extends towards four different quadrants's electrode auxiliary grid.
Furthermore, the bonding pads of two adjacent bonding pad groups are arranged in a one-to-one correspondence manner in the second direction, and in a quadrilateral region with two adjacent bonding pads on one bonding pad group and two corresponding bonding pads on the other adjacent bonding pad group as vertexes, four corresponding bonding pads are connected with one electrode sub-grid positioned in the quadrilateral region, and the four electrode sub-grids are intersected at one point.
Furthermore, the quadrilateral area is rectangular, and the point where the four electrode auxiliary grids in the quadrilateral area meet is the central point of the rectangle.
Further, the width of the electrode subgrids has a tendency to become gradually smaller in a direction away from the corresponding pad.
Furthermore, the width range of one end of the electrode auxiliary grid, which is far away from the corresponding bonding pad, is 0.03mm-0.1mm, and the width range of one end of the electrode auxiliary grid, which is close to the corresponding bonding pad, is 0.1mm-1 mm.
Further, the pad is circular or rectangular.
Further, the pad is circular, and the diameter range of the pad is 0.2mm-4 mm.
Furthermore, the bonding pad is rectangular, the width range of the bonding pad in the first direction is 1mm-4mm, and the length range of the bonding pad in the second direction is 2-20 mm.
Further, the double-sided solar cell further comprises a back electric field which is arranged on the back of the silicon wafer and electrically connected with the back electrode, and the back electric field comprises a plurality of back field auxiliary grids which are distributed along the second direction at intervals in parallel.
The invention also provides a photovoltaic module which comprises the double-sided solar cell.
The invention has the beneficial effects that: the invention provides a double-sided solar cell with a brand new back electrode structure, and based on the specific design structure of the back electrode, the transmission path of the current on the back side of the double-sided solar cell can be effectively optimized, so that the cell efficiency of the double-sided solar cell can be effectively improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of the overall structure of the back side of a prior art bifacial solar cell;
FIG. 2 is an enlarged view of a portion a of FIG. 1;
FIG. 3 is a schematic diagram of a back electrode design of a bifacial solar cell in accordance with the present invention;
FIG. 4 is an enlarged view of portion b of FIG. 3;
FIG. 5 is a schematic view of the overall structure of the backside of a bifacial solar cell of the present invention;
FIG. 6 is an enlarged view of portion c of FIG. 5;
fig. 7 is another overall structure diagram of the backside of the bifacial solar cell of the present invention.
In the figure, 100 'is a silicon wafer of a double-sided solar cell in the prior art, 200' is a silver main grid, 31 'is an aluminum grid line, and 32' is an aluminum main grid; 100 is a silicon wafer, 200 is a back electrode, 21 is a pad, 211 is a first pad, 212 is a second pad, 213 is a third pad, 214 is a fourth pad, 22 is an electrode subgrid, 220 is an intersection, 221 is a first electrode subgrid, 222 is a second electrode subgrid, 223 is a third electrode subgrid, 224 is a fourth electrode subgrid, 300 is a back electric field, and 30 is a back field subgrid.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 3, the double-sided solar cell provided by the invention includes a silicon wafer 100 and a back electrode 200 disposed on the back side of the silicon wafer, wherein the back electrode 200 includes a plurality of pad groups spaced apart along a first direction D1, and each pad group includes a plurality of pads 21 spaced apart along a second direction D2 perpendicular to the first direction D1. In the embodiment shown in fig. 3, the back electrode 200 includes five groups of pads spaced apart along the first direction D1, and each group of pads includes five pads 21 spaced apart along the second direction D2.
Further, referring to fig. 3, the back electrode 200 further includes four electrode sub-grids 22 each connected to the pad 21 and extending toward four different quadrants, in a coordinate system with the pad 21 as an origin, with a horizontal axis being a straight line extending in the first direction D1, and a vertical axis being a straight line extending in the second direction D2. It will be appreciated that in the present invention, each pad 21 is associated with an electrode subgrid 22 extending towards four different quadrants of the respective coordinate system
The invention also provides a photovoltaic module which comprises the double-sided solar cell.
According to the invention, the back electrode of the double-sided solar cell is completely different from the back electrode structure of the traditional double-sided solar cell, and based on the specific design structure, the transmission path of the current on the back side of the double-sided solar cell can be effectively optimized, so that the cell efficiency of the double-sided solar cell can be effectively improved.
Further, in some preferred embodiments of the present invention, the pads 21 of two adjacent pad groups are disposed in a one-to-one correspondence in the second direction D2, and it is easy to understand that two adjacent pad groups have the same number of pads 21. In a quadrilateral region with two adjacent bonding pads 21 on one bonding pad group and two corresponding bonding pads 21 on the other adjacent bonding pad group as vertexes, four corresponding bonding pads 21 are connected with one electrode sub-grid 22 positioned in the corresponding quadrilateral region, and the four electrode sub-grids 22 are intersected at one point.
Specifically, as shown in fig. 3 and 4, two adjacent pads 21 on a pad group include a first pad 211 and a second pad 212, the pad group adjacent to the pad group has two pads 21 corresponding to the first pad 211 and the second pad 212 one by one, that is, a third pad 213 and a fourth pad 214, in a quadrilateral region with the first pad 211, the second pad 212, the third pad 213 and the fourth pad 214 as vertices, the first pad 211, the second pad 212, the third pad 213 and the fourth pad 214 are respectively connected with a first electrode subgrid 221, a second electrode subgrid 222, a third electrode subgrid 223 and a fourth electrode subgrid 224 located inside the quadrilateral region, and the first electrode subgrid 221, the second electrode subgrid 222, the third electrode subgrid 223 and the fourth electrode subgrid 224 intersect at a same intersection point 220.
As a further preferred embodiment of the present invention, referring to fig. 4, a quadrilateral region having the first pad 211, the second pad 212, the third pad 213, and the fourth pad 214 as vertices is rectangular, and the intersection point 220 is a center point of the rectangle. It is understood that in other embodiments of the present invention, the quadrilateral region with the first pad 211, the second pad 212, the third pad 213 and the fourth pad 214 as vertices may have other quadrilateral shapes.
It will be appreciated that during operation of the bifacial solar cell, the end of the electrode subgrid 22 near the respective pad 21 has a greater current than the end of the electrode subgrid 22 remote from the respective pad 21. For better matching the transmission of current in the electrode subgrids 22, the width of the electrode subgrids 22 has a tendency to become progressively smaller in a direction away from the respective pad 21.
In a specific implementation, as shown in fig. 4, the width d1 of the end of the electrode subgrid 22 away from the corresponding pad 21 ranges from 0.03mm to 0.1mm, and the width d2 of the end of the electrode subgrid 22 close to the corresponding pad 21 ranges from 0.1mm to 1 mm. To ensure that the electrode subgrids 22 do not produce breaks during the printing process and do not shade the backside of the bifacial solar cell from excessive areas, in some embodiments of the invention the d1 preferably ranges from 0.03mm to 0.05mm and the d2 preferably ranges from 0.2mm to 0.4 mm.
In the practice of the invention, the pads 21 involved are intended to be connected to solder ribbons during assembly of the photovoltaic module, and are typically in the form of a regular pattern, such as a circle or rectangle.
In the embodiment shown in fig. 3 and 4, the pad 21 has a circular shape, and the diameter of the pad 21 is preferably set in the range of 0.2mm to 4 mm.
In other embodiments of the present invention, the pads 21 are configured to have a rectangular shape, and the width of the pads 21 in the first direction D1 ranges from 1mm to 4mm, and the length of the pads 21 in the second direction D2 ranges from 2mm to 20 mm.
Referring to fig. 5 and 6, the bifacial solar cell according to the present invention further includes a back electric field 300 disposed on the back surface of the silicon wafer 100 and electrically connected to the back electrode 200, wherein the back electric field includes a plurality of back field sub-grids 30 spaced apart from each other in parallel along the second direction D2. In a specific implementation, the width of the back field sub-gate 30 may be set to be in a range of 40 μm to 150 μm.
The double-sided solar cell according to the present invention may be a PERC double-sided solar cell, the back surface of the silicon wafer 100 is provided with a passivation layer, the back electrode 200 and the back electric field 300 are both disposed on the back surface of the passivation layer, and the back surface of the silicon wafer 100 is provided with a groove (not shown) penetrating through the passivation layer to allow the back electric field 300 back electric field auxiliary gate 30 to be directly electrically connected to the back surface of the silicon wafer 100.
In a specific implementation process, the back electrode 200 of the present invention may be configured as a silver electrode, which is printed and sintered by conductive silver paste; the back electric field 300 involved in the present invention is typically an aluminum back field, which is printed and sintered from conductive aluminum paste.
It is understood that the bifacial solar cell of the present invention also has a front electrode disposed on the front side of the silicon wafer 100, and is not further developed herein.
To better understand the technical effect of the double-sided solar cell provided by the present invention, referring to fig. 6, in this embodiment, for the back field sub-grid 30 connected to the back electrode sub-grid 22, the current can flow into the back electrode sub-grid 22 through a short distance on the back field sub-grid 30, specifically, the farthest paths of the current transmitted by the back field sub-grid 30 to the back electrode sub-grid 22 are all less than half of the distance between two adjacent pad groups; further, the back electrode sub-gate 22 for connecting the back field sub-gate 30 with the pad 21 has a much smaller resistivity than the opposing back field sub-gate 30. Based on this, the back electrode 200 provided by the invention can effectively reduce the series resistance of the double-sided solar cell, thereby improving the cell efficiency of the double-sided solar cell.
In addition, because the back electrode 200 related in the invention is not provided with the main grid structure, the consumption of the corresponding conductive paste is not increased when the back electrode 200 is printed, and the shading area of the back surface of the cell can be greatly reduced, thereby improving the double-sided rate of the double-sided solar cell.
Referring to fig. 7, which shows a structure of the double-sided solar cell of the present invention different from that of the double-sided solar cell shown in fig. 5, in this embodiment, the back electrode of the double-sided solar cell includes a back electrode 200 including ten sets of pads spaced apart along a first direction D1, and each of the sets of pads includes five pads 21 spaced apart along a second direction D2. It is understood that in other embodiments of the present invention, the number of the pad groups of the back electrode 200 and the number of the pads 21 of each pad group can be adjusted more desirably.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (10)
1. The double-sided solar cell comprises a silicon wafer and a back electrode arranged on the back of the silicon wafer, and is characterized in that the back electrode comprises a plurality of bonding pad groups arranged at intervals along a first direction, each bonding pad group comprises a plurality of bonding pads distributed at intervals along a second direction perpendicular to the first direction, the bonding pads are used as original points, straight lines extending along the first direction are used as transverse axes, straight lines extending along the second direction are used as longitudinal axes in a coordinate system, and the back electrode further comprises four electrode sub-grids which are connected to the bonding pads and extend towards four different quadrants.
2. The bifacial solar cell of claim 1, wherein the bonding pads of two adjacent bonding pad groups are correspondingly arranged in the second direction, and in a quadrilateral region with two adjacent bonding pads of one bonding pad group and two corresponding bonding pads of another adjacent bonding pad group as vertexes, four corresponding bonding pads are respectively connected with an electrode sub-grid positioned in the quadrilateral region, and the four electrode sub-grids are intersected at one point.
3. The bifacial solar cell of claim 2, wherein said quadrilateral area has a rectangular shape, and a point in said quadrilateral area where said four electrode subgrids meet is a center point of said rectangular shape.
4. The bifacial solar cell of any one of claims 1-3, wherein the width of the electrode subgrids has a tendency to taper away from the respective pad.
5. The bifacial solar cell of claim 4, wherein the width of the end of the electrode subgrid distal from the respective pad ranges from 0.03mm to 0.1mm, and the width of the end of the electrode subgrid proximal to the respective pad ranges from 0.1mm to 1 mm.
6. The bifacial solar cell of any one of claims 1-3, wherein the bonding pads are circular or rectangular.
7. The bifacial solar cell of claim 6, wherein said bonding pads are circular and have a diameter in the range of 0.2mm to 4 mm.
8. The bifacial solar cell of claim 6, wherein said bonding pads are rectangular, said bonding pads having a width in said first direction in the range of 1mm to 4mm and a length in said second direction in the range of 2mm to 20 mm.
9. The bifacial solar cell of any one of claims 1-3, further comprising a back electric field disposed on the back surface of the silicon wafer and electrically connected to the back electrode, wherein the back electric field comprises a plurality of back field sub-grids spaced apart in parallel along the second direction.
10. A photovoltaic module comprising the bifacial solar cell of any one of claims 1-9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911295199.4A CN113066875A (en) | 2019-12-16 | 2019-12-16 | Double-sided solar cell and photovoltaic module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911295199.4A CN113066875A (en) | 2019-12-16 | 2019-12-16 | Double-sided solar cell and photovoltaic module |
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| CN113066875A true CN113066875A (en) | 2021-07-02 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203521435U (en) * | 2013-09-30 | 2014-04-02 | 深圳市大族激光科技股份有限公司 | MWT silicon solar cell front-surface electrode grid line structure and cell |
| CN209119118U (en) * | 2018-12-29 | 2019-07-16 | 苏州阿特斯阳光电力科技有限公司 | Double-side cell piece and photovoltaic module |
| CN110112230A (en) * | 2019-03-29 | 2019-08-09 | 无锡日托光伏科技有限公司 | A kind of preparation method of MWT solar battery |
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2019
- 2019-12-16 CN CN201911295199.4A patent/CN113066875A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203521435U (en) * | 2013-09-30 | 2014-04-02 | 深圳市大族激光科技股份有限公司 | MWT silicon solar cell front-surface electrode grid line structure and cell |
| CN209119118U (en) * | 2018-12-29 | 2019-07-16 | 苏州阿特斯阳光电力科技有限公司 | Double-side cell piece and photovoltaic module |
| CN110112230A (en) * | 2019-03-29 | 2019-08-09 | 无锡日托光伏科技有限公司 | A kind of preparation method of MWT solar battery |
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Application publication date: 20210702 |