CN101894872A - Fine electrode crystalline silicon solar battery and preparation method thereof - Google Patents
Fine electrode crystalline silicon solar battery and preparation method thereof Download PDFInfo
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- CN101894872A CN101894872A CN2009102645024A CN200910264502A CN101894872A CN 101894872 A CN101894872 A CN 101894872A CN 2009102645024 A CN2009102645024 A CN 2009102645024A CN 200910264502 A CN200910264502 A CN 200910264502A CN 101894872 A CN101894872 A CN 101894872A
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Abstract
The invention provides a fine electrode crystalline silicon solar battery and a preparation method thereof, and relates to the technical field of preparation of solar batteries, in particular to the fine electrode crystalline silicon solar battery and the preparation method thereof. The solar battery consists of a plurality of electrode grid lines(1), wherein an electrode grid line is formed by connecting a group of fine line sections(2); and the width of the joint(3) of two adjacent grid line sections is larger than that of other parts. The method has the advantages of simple process, low cost, high output, high automation and the like; and thinner, higher and tighter electrode grid lines can be prepared by the method of the invention compared with those prepared by the screen printing method.
Description
Technical field:
What the present invention relates to is the technical field of solar cell preparation, and what be specifically related to is a kind of fine electrode crystalline silicon solar battery and preparation method thereof.
Background technology:
One of effective way that improves the crystal-silicon solar cell photoelectric conversion efficiency is to reduce the width of its gate electrode line, to reduce the shading area of metal electrode, increases the incident of light.At present, the making of crystalline silicon solar battery electrode generally is to adopt the method for silk screen printing to carry out, and the electrode that screen printing technique prepares crystal-silicon solar cell has simple, low-cost, the high yield and the advantage such as increasingly automated of technology.But because the restriction of existing metal electrode sizing and silk-screen printing technique self is difficult to do the grid line of solar cell metal electrode very meticulous.The minimum dimension of the metal electrode of the crystal-silicon solar cell of silk screen printing is at present about 100-110 μ m.When the width that requires metal electrode further reduces, (for example be reduced to below the 100 μ m), will occur stopping up the phenomenon of the gate electrode line fracture that causes inevitably owing to the silk screen version.
In order to prepare more meticulous solar cell metal electrode, to reduce the shading area of metal electrode, improve photoelectric conversion efficiency, people attempt to adopt other method to prepare the metal electrode of solar cell, for example adopt methods such as photoetching, plating, laser processing, even metal electrode is produced on the back side of solar cell.Although these methods all prepare meticulousr solar cell metal electrode, reduced the shading area of metal electrode, but its manufacture craft is all comparatively complicated, and cost is higher, is difficult to simple, low-cost, the high yield of silk-screen printing technique and characteristic such as increasingly automated comparable.
Go up in a solid panel (especially corrosion resistant plate) that hollow out goes out pattern and the technology that is used to print is called the stencil printing technology, this solid panel that has pierced pattern then is called hollowed printing stencil (abbreviating the hollow out version as).The stencil printing technology can with existing screen printing apparatus compatible and have that the technology of silk screen printing is simple, low-cost, high yield and increasingly automated etc. advantage.And, the stainless wire mesh as the silk screen version not in the hollow out slit of hollowed printing stencil, thereby have bigger aperture efficiency (reach more than 95%, and the silk screen version being about 40%) and better deinking characteristic, can print out meticulousr, higher, more solid lines.Stencil printing (stencil print) technology comparatively has been widely used in surface mounting technology (the surface mount technology in the integrated circuit, SMT) field, but really be not applied to solar cell and make the field, because it is much higher that the precision of solar cel electrode is compared the SMT field, this has increased the difficulty of processing and the processing cost of hollow out version widely.Therefore, when the stencil printing technology was applied to the electrode manufacturing field of solar cell, the machining accuracy that reduces the hollow out version was a primary task.
Summary of the invention:
The purpose of this invention is to provide a kind of fine electrode crystalline silicon solar battery and preparation method thereof, its technology is simple, low-cost, high yield and increasingly automated etc. advantage, can prepare the gate electrode line thinner, higher, more solid than silk screen printing again.
In order to solve the existing problem of background technology, the present invention is by the following technical solutions: it is made up of many strip electrodes grid line 1, wherein a strip electrode grid line then is formed by connecting by one group of meticulous line segment 2, and the width of two adjacent grid line section junctions 3 is greater than other local width; It adopts the stencil printing technology to prepare, its manufacture method comprises the steps: one, the silicon chip surface texturing, two, High temperature diffusion, three, remove periphery or back side PN junction, four, remove phosphorosilicate glass, five, the coated with antireflection film, six, silk screen printing backplate and back side aluminum slurry and oven dry, seven, the positive meticulous silver electrode of stencil printing, eight, the electrode co-sintering.
Described stencil printing technology is meant in a solid panel (especially corrosion resistant plate) and goes up the technology that hollow out goes out electrode pattern and is used for the electrode slurry printing, this solid panel that has pierced pattern then is called hollowed printing stencil (abbreviating the hollow out version as), and this hollow out version is to be fixed on one the frame, can use with existing screen printing apparatus is compatible, not need to increase extra equipment.
The present invention utilizes the hollow out version that has corresponding pierced pattern to print and obtains, one strip electrode grid line is corresponding to a hollow out slit of hollow out version, because a strip electrode grid line then is formed by connecting by one group of line segment, therefore, a hollow out slit of hollow out version also is formed by connecting by one group of hollow out slit line segment, the bridging that two adjacent grid line section junctions then form corresponding to adjacent two hollow out slit line segment junctions.
Described bridging be form in the junction of adjacent two sections hollow out slits not by the place of hollow out.The width of the bridging in the hollowed printing stencil and length all are very very important.On the one hand, the width of bridging is enough little, so that the electrode slurry of printing back in its both sides can link together by flowing, but too small bridging width will increase the difficulty of processing of hollow out version, therefore, under the prerequisite that the electrode slurry that guarantees the bridging both sides can link together, big more difficulty of processing and the processing cost that helps reducing the hollow out version more of the width of bridging.On the other hand, the length of bridging is for certain influence that is connected with of bridging both sides electrode slurry, if the length of bridging increases, then the chance that links together of its both sides electrode slurry will increase greatly.At this moment, if the width of suitable increase bridging can guarantee that still the electrode slurry of its both sides can link together.With existing electrode slurry is example, in order to guarantee that the electrode slurry that prints bridging both sides, back can link together, if the length of bridging has only about tens to 100 microns, so, the line footpath of the width needs of bridging and the stainless steel wire of existing screen printing stencil is approximately suitable, promptly about 20 microns; If but the length of bridging is increased to 1 millimeter, then the width of bridging can increase to about 40 microns.
The width and the bar number of the width of the width of described gate electrode line 1 and bar number, grid line line segment 2 and bar number and two adjacent grid line section junctions 3 can be adjusted and change as required.
Described silicon chip surface texturing is meant that the method for dry etchings such as wet etchings such as adopting acid, alkali or plasma etching, reactive ion etching erodes away small pyramid or bowl configurations at silicon chip surface, to increase the roughness of silicon chip surface, reduce the light emission of silicon chip surface.
Described High temperature diffusion is meant carries out high temperature phosphorous diffusion (to P type silicon chip) to form PN junction in diffusion furnace.
Described removal periphery or back side PN junction are meant that the method for dry etchings such as wet etchings such as adopting acid, alkali or plasma etching, reactive ion etching get rid of at the PN junction at the silicon chips periphery or the back side in will spreading.
Described coated with antireflection film is meant that using plasma strengthens the method for chemical vapour deposition (CVD) (PECVD) at silicon chip surface deposited silicon nitride antireflective coating, the method that perhaps adopts high-temperature thermal oxidation earlier is at silicon chip surface growth layer of silicon dioxide film, and then the method that adopts aumospheric pressure cvd (APCVD) deposition of titanium oxide thin layer on silicon dioxide layer again, or the layer of silicon dioxide thin layer adds the last layer silicon nitride film layer, thin layer that can also the 3rd layer of other material of regrowth (as magnesium fluoride etc.).
The present invention compares methods such as laser processing, photoetching, plating and has that the technology of silk screen printing is simple, low-cost, high yield and increasingly automated etc. advantage.And compare method for printing screen, because the stainless wire mesh as the silk screen version not in the hollow out slit of hollowed printing stencil, this method has bigger aperture efficiency and better deinking characteristic, so can be prepared thinner, higher, more solid gate electrode line.
Description of drawings:
Fig. 1 is a structural representation of the present invention.
Embodiment:
Referring to Fig. 1-2, this embodiment is by the following technical solutions: it is made up of many strip electrodes grid line 1, and wherein a strip electrode grid line then is formed by connecting by one group of meticulous line segment 2, and the width of two adjacent grid line section junctions 3 is greater than other local width; It adopts the stencil printing technology to prepare, its manufacture method comprises the steps: one, the silicon chip surface texturing, two, High temperature diffusion, three, remove periphery or back side PN junction, four, remove phosphorosilicate glass, five, the coated with antireflection film, six, silk screen printing backplate and back side aluminum slurry and oven dry, seven, the positive meticulous silver electrode of stencil printing, eight, the electrode co-sintering.
Described stencil printing technology is meant in a solid panel (especially corrosion resistant plate) and goes up the technology that hollow out goes out electrode pattern and is used for the electrode slurry printing, this solid panel that has pierced pattern then is called hollowed printing stencil (abbreviating the hollow out version as), and this hollow out version is to be fixed on one the frame, can use with existing screen printing apparatus is compatible, not need to increase extra equipment.
This embodiment is utilized the hollow out version have corresponding pierced pattern to print and is obtained, one strip electrode grid line is corresponding to a hollow out slit of hollow out version, because a strip electrode grid line then is formed by connecting by one group of line segment, therefore, a hollow out slit of hollow out version also is formed by connecting by one group of hollow out slit line segment, the bridging that two adjacent grid line section junctions then form corresponding to adjacent two hollow out slit line segment junctions.
Described bridging be form in the junction of adjacent two sections hollow out slits not by the place of hollow out.The width of the bridging in the hollowed printing stencil and length all are very very important.On the one hand, the width of bridging is enough little, so that the electrode slurry of printing back in its both sides can link together by flowing, but too small bridging width will increase the difficulty of processing of hollow out version, therefore, under the prerequisite that the electrode slurry that guarantees the bridging both sides can link together, big more difficulty of processing and the processing cost that helps reducing the hollow out version more of the width of bridging.On the other hand, the length of bridging is for certain influence that is connected with of bridging both sides electrode slurry, if the length of bridging increases, then the chance that links together of its both sides electrode slurry will increase greatly.At this moment, if the width of suitable increase bridging can guarantee that still the electrode slurry of its both sides can link together.With existing electrode slurry is example, in order to guarantee that the electrode slurry that prints bridging both sides, back can link together, if the length of bridging has only about tens to 100 microns, so, the line footpath of the width needs of bridging and the stainless steel wire of existing screen printing stencil is approximately suitable, promptly about 20 microns; If but the length of bridging is increased to 1 millimeter, then the width of bridging can increase to about 40 microns.
The width and the bar number of the width of the width of described gate electrode line 1 and bar number, grid line line segment 2 and bar number and two adjacent grid line section junctions 3 can be adjusted and change as required.
The detailed step that this embodiment adopts is as follows:
One, be that 125mm * 125mm, thickness are about 200 microns p type single crystal silicon sheet and put into the solution that NaOH, sodium metasilicate, isopropyl alcohol and deionized water form and corrode with area, obtain surface unanimity, pyramid matte silicon chip of uniform size, realize the silicon chip surface texturing, light reflectivity to obtain to reduce cleans up silicon chip then.
Two, silicon chip is put into diffusion furnace, and utilize nitrogen to carry liquid POCl
3Enter in the diffusion furnace silicon chip is carried out High temperature diffusion, diffusion temperature is 840 ℃, and the time is 30 minutes, and the square resistance that the diffusion back obtains is about about 75 ohm.
Three, the silicon chip after will spreading is put into the etching machine, utilizes the method for the plasma etching of carbon tetrafluoride and oxygen mixed gas to get rid of the PN junction of silicon chips periphery.
Four, utilize hydrofluoric acid solution that the phosphorosilicate glass that silicon chip surface forms is got rid of.
Five, utilize the method for plasma enhanced chemical vapor deposition (PECVD) at silicon chip surface deposition last layer silicon nitride antireflective and passivating film.
Six, the method for utilizing silk screen printing silver-colored aluminum slurry and oven dry on silicon chip back of the body surface printing, to use as back electrode, aluminum slurry and oven dry in other the regional silk screen printing of the silicon chip back side then is with as the back side aluminium back of the body.
Seven, utilize hollow out version silver electrode paste in the printing of silicon chip front surface, the front electrode that is obtained has two strip electrode main grid lines and the secondary grid line 1 of 85 strip electrodes.Wherein a strip electrode grid line then is formed by connecting by one group of meticulous line segment 2, and the width of two adjacent grid line section junctions 3 is greater than other local width, as shown in Figure 1, and employed hollow out version for pattern as shown in Figure 2.
Eight, silicon chip is put into high temperature sintering furnace and carried out high temperature sintering, make metal electrode sizing solidify, and form alloy and ohmic contact, obtain fine electrode crystalline silicon solar battery with silicon chip.
This embodiment has following beneficial effect:
One, it is to adopt the method for stencil printing to prepare, and this hollow out version is to be fixed on one the frame, can have the characteristic of silk screen printing with compatible use of existing screen printing apparatus, compare methods such as laser processing, photoetching, plating, have that technology is simple, low-cost, high yield and increasingly automated an etc. advantage.
Two, it is to adopt the method for stencil printing to prepare, because the stainless wire mesh as the silk screen version not in the open slots, thereby have bigger aperture efficiency and (reach more than 95%, and the silk screen version is about 40%) and better deinking characteristic, compare traditional silk screen printing, can print out thinner, higher, more solid crystalline silicon solar battery electrode grid line, thereby reduce the shading area of solar cell front electrode, improve photoelectric conversion efficiency.
Three, its electrode has adopted two adjacent lines sections to overlap mutually the particular design of connection, can reduce the required precision of electrode pair hollow out version, thereby reduces the difficulty of processing and the cost of hollow out version.
Claims (4)
1. fine electrode crystalline silicon solar battery and preparation method thereof, it is characterized in that it is made up of many strip electrodes grid line (1), wherein a strip electrode grid line then is formed by connecting by one group of meticulous line segment (2), and the width of two adjacent grid line section junctions (3) is greater than other local width.
2. a kind of fine electrode crystalline silicon solar battery according to claim 1 and preparation method thereof, the making step that it is characterized in that it: one, silicon chip surface texturing, two, High temperature diffusion, three, remove periphery or back side PN junction, four, remove phosphorosilicate glass, five, the coated with antireflection film, six, silk screen printing backplate and back side aluminum slurry and oven dry, seven, the positive meticulous silver electrode of stencil printing, eight, the electrode co-sintering.
3. the hollow out version that a kind of fine electrode crystalline silicon solar battery according to claim 1 and preparation method thereof, the electrode utilization that it is characterized in that the particular design of described solar cell have a corresponding pierced pattern is printed and is obtained.
4. a kind of fine electrode crystalline silicon solar battery according to claim 2 and preparation method thereof is characterized in that described High temperature diffusion is meant that carrying out high temperature phosphorous in diffusion furnace spreads to form PN junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2009102645024A CN101894872A (en) | 2009-12-25 | 2009-12-25 | Fine electrode crystalline silicon solar battery and preparation method thereof |
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| CN2009102645024A CN101894872A (en) | 2009-12-25 | 2009-12-25 | Fine electrode crystalline silicon solar battery and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130215A (en) * | 2010-12-31 | 2011-07-20 | 常州天合光能有限公司 | Production process of high-efficiency solar cell |
| CN102263159A (en) * | 2011-05-31 | 2011-11-30 | 江阴鑫辉太阳能有限公司 | Process for preparing n-type solar cell by utilizing boron-phosphorus coamplification |
| CN102270696A (en) * | 2011-05-30 | 2011-12-07 | 合肥海润光伏科技有限公司 | Front electrode secondary overprinting process |
| WO2014079083A1 (en) * | 2012-11-20 | 2014-05-30 | 泰通(泰州)工业有限公司 | Method for manufacturing solar energy battery electrode |
-
2009
- 2009-12-25 CN CN2009102645024A patent/CN101894872A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130215A (en) * | 2010-12-31 | 2011-07-20 | 常州天合光能有限公司 | Production process of high-efficiency solar cell |
| CN102270696A (en) * | 2011-05-30 | 2011-12-07 | 合肥海润光伏科技有限公司 | Front electrode secondary overprinting process |
| CN102263159A (en) * | 2011-05-31 | 2011-11-30 | 江阴鑫辉太阳能有限公司 | Process for preparing n-type solar cell by utilizing boron-phosphorus coamplification |
| WO2014079083A1 (en) * | 2012-11-20 | 2014-05-30 | 泰通(泰州)工业有限公司 | Method for manufacturing solar energy battery electrode |
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Open date: 20101124 |