WO2015043028A1 - Local aluminum back surface field solar battery with two light-pervious surfaces, and preparation method therefor - Google Patents

Local aluminum back surface field solar battery with two light-pervious surfaces, and preparation method therefor Download PDF

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Publication number
WO2015043028A1
WO2015043028A1 PCT/CN2013/085642 CN2013085642W WO2015043028A1 WO 2015043028 A1 WO2015043028 A1 WO 2015043028A1 CN 2013085642 W CN2013085642 W CN 2013085642W WO 2015043028 A1 WO2015043028 A1 WO 2015043028A1
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Prior art keywords
aluminum
crystalline silicon
solar cell
double
sided light
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PCT/CN2013/085642
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French (fr)
Chinese (zh)
Inventor
蒋秀林
单伟
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晶澳（扬州）太阳能科技有限公司
晶澳太阳能有限公司
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Priority to JP2016522185A priority Critical patent/JP6353039B2/en
Publication of WO2015043028A1 publication Critical patent/WO2015043028A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the invention belongs to the field of photovoltaic technology, and particularly relates to a double-sided light-transmissive partial aluminum back-field solar cell and a preparation method thereof.
  • Photovoltaic technology is a technology that uses large-area p-n junction diodes to convert solar energy into electrical energy.
  • This p-n junction diode is called a solar cell.
  • the semiconductor materials for making solar cells all have a certain band gap. When the solar cells are exposed to solar radiation, photons with energy exceeding the forbidden band generate electron-hole pairs in the solar cell, and the pn junction separates electron-hole pairs, pn junctions.
  • the asymmetry determines the flow direction of different types of photo-generated carriers, and the external circuit can be connected to output power. This is similar to the principle of an ordinary electrochemical battery.
  • Industrial production p-type crystalline silicon solar cells usually use an all-aluminum back-field structure, that is, the aluminum paste is printed on the entire surface of the back surface, and an aluminum back field is formed after sintering.
  • the disadvantage of this structure is that there is no back passivation and low back reflectance, which affects the battery's voltage and current performance.
  • the partial aluminum back field battery overcomes the above disadvantages.
  • the battery uses a passivated film to passivate the back surface of the battery while increasing the back surface reflectivity.
  • the passivation film effectively inactivates a large number of overhanging bonds and defects (such as dislocations, grain boundaries and point defects) on the surface of the silicon material, thereby reducing the recombination rate of the photogenerated carrier silicon surface and improving the effective lifetime of the minority carriers, thereby Promote the improvement of photoelectric conversion efficiency of solar cells.
  • the passivation film also has the effect of increasing back reflection, thereby increasing the absorption of sunlight by the silicon material, increasing the concentration of photogenerated carriers and increasing the photocurrent density.
  • the types and preparation methods of the passivation film include: PECVD amorphous silicon film, PECVD SiCx film, thermal oxygen, wet oxygen or spin-on silicon oxide film, Si0 2 /SiNx laminated film, CVD, MOCVD, PECVD APCVD or ALD The prepared A1 2 0 3 film, Al 2 0 3 /SiNx laminated film, and the like.
  • the printed aluminum paste is sintered to form a local aluminum back field.
  • the total area of the holes or wires generally accounts for 1-15% of the back surface. If the area is too small, the contact resistance on the back side will increase, and if it is too large, the recombination rate on the back side will increase. Both cases will affect the photoelectric conversion efficiency of the battery. Opening or opening is generally done by laser or chemical etching.
  • Printed aluminum paste generally uses a full back field pattern, i.e., aluminum paste covers all backside areas except the back electrode. Thus, the light incident or scattered on the back side cannot be absorbed by the battery, which affects the photoelectric conversion efficiency.
  • An object of the present invention is to provide a double-sided light-transmissive partial aluminum back-field crystalline silicon solar cell, which is provided with a double-sided light-transmissive structure by providing a local aluminum back field on a passivation film on the back surface of the crystalline silicon, not only a battery
  • the front side receives and receives incident or scattered light, and also enables the back side to receive and absorb incident or scattered light, thereby increasing The photoelectric conversion efficiency of the solar cell.
  • Another object of the present invention is to provide a method for preparing the above-mentioned double-sided light-transmissive partial aluminum back field crystalline silicon solar cell, which is simple in process and low in cost.
  • a first object of the present invention is achieved by the following technical solutions:
  • a double-sided light-transmissive local aluminum back-field crystalline silicon solar cell comprising a silicon substrate, an emitter disposed on the front side of the silicon substrate, and a front side anti-reflection passivation a film and a front electrode, and a back passivation film, a back electric field and a back electrode provided on the back surface of the silicon substrate, wherein the back electric field is a partial aluminum back field, which is opened or grooved in the back passivation film, in the opening Or the grooved area covers the opening or the grooved area with a linear aluminum paste, and the partial back passivation film is not covered by the aluminum paste, and a local aluminum back field is formed in the open hole or the grooved area after sintering, A local aluminum back field is in communication with the back electrode.
  • the technical solution adopted by the present invention is to print or sputter a plurality of aluminum wires (linear aluminum paste) to cover the opening or the grooved area after opening or slotting the back passivation layer (film).
  • the part of the back passivation layer (film) is not covered by the aluminum paste, and the printed or sputtered linear aluminum paste pattern needs to be directly or indirectly connected to the back electrode to collect current.
  • the double-sided light-transmissive partial aluminum back-field crystalline silicon solar cell of the invention can effectively promote the photoelectric performance of the solar cell and can reduce the cost.
  • the linear aluminum paste in the present invention may be disposed in parallel with each other or at an angle, wherein the width of the linear aluminum paste is preferably 20 to 2000 ⁇ m, and the pitch ⁇ 2 of the adjacent two-line aluminum paste is preferably 200 to 2000 ⁇ m.
  • the present invention provides openings or slots parallel to each other on the back passivation layer (film), and is disposed on the openings or slots to conform to the shape of the openings or slots.
  • the aluminum paste is disposed so that the aluminum paste completely covers the open hole or the grooved area, but the part of the back passivation film is not covered by the aluminum paste, and after sintering, a local aluminum back field is formed in the open hole or the grooved area, and the part is The aluminum back field is in communication with the back electrode to form a double-sided light transmissive local aluminum back field solar cell.
  • the open or grooved areas of the present invention must all be covered by linear aluminum paste.
  • the openings or slots in the present invention may or may not be parallel to each other, such as may be disposed at a certain angle. Among them, the opening or the groove is arranged in parallel with each other to have an optimal solution.
  • the openings of the present invention are plural, preferably spaced apart, the aperture D of the openings is preferably 10 to 200 ⁇ m, and the hole pitch ⁇ 0 is preferably 100 to 1000 ⁇ m.
  • the width W1 of the groove of the present invention is preferably 10 to 200 ⁇ m, and the pitch PI between adjacent grooves is preferably 200 to 0 ⁇ m.
  • the linear aluminum paste in the present invention is directly connected to the back electrode or indirectly connected to the back electrode through other linear aluminum paste or the like to collect current.
  • the second object of the present invention is achieved by the following technical solutions:
  • the above-mentioned double-sided light-transmissive partial aluminum back-field crystalline silicon solar cell is prepared by: selecting a crystalline silicon wafer, flocking, cleaning, phosphorus diffusion, Back junction, deposit backside passivation film, deposit front anti-reflective passivation film, open or groove on the back passivation film, print back electrode, cover linear aluminum paste on opening or slot, retain part of back
  • the passivation film is not covered by the aluminum paste, the front electrode is printed, and after sintering, a partial aluminum back field is formed, and the partial aluminum back field is connected with the back electrode to form a double-sided transparent partial aluminum back field crystalline silicon.
  • the crystalline silicon wafer in the present invention is preferably a p-type crystalline silicon wafer, and may be a p-type single crystal or a polycrystalline silicon wafer.
  • texturing, cleaning, phosphorus diffusion, deposition of a passivation film, back-knotting, printing of a positive electrode and a back electrode can be carried out by conventional techniques in the field.
  • the front passivation antireflection film may be a silicon nitride film or a laminated film of silicon nitride/silicon oxide or the like.
  • a silicon nitride/silicon oxide laminated film or the like may be used, wherein silicon nitride/silicon oxide laminated film must be silicon oxide.
  • Direct contact with the crystalline silicon wafer; a silicon oxynitride/silicon nitride stacked film and a silicon carbide/silicon nitride stacked film or the like can also be used.
  • Opening or grooving may be performed by conventional techniques in the art such as laser or chemical etching to open or grooving.
  • the opening may be provided with a continuous hole or an opening having a certain interval.
  • the opening is provided with a certain interval.
  • the opening may be slotted by a broken line or slotted by a solid line, preferably by a solid line slot. .
  • the linear aluminum paste in the present invention may be disposed in parallel with each other or at an angle, wherein the width of the linear aluminum paste is preferably 20 to 2000 ⁇ m, and the pitch ⁇ 2 of the adjacent two-line aluminum paste is preferably 200 to 2000 ⁇ m.
  • the present invention provides openings or slots parallel to each other on the back passivation layer (film), and is disposed on the openings or slots to conform to the shape of the openings or slots.
  • the aluminum paste is disposed so that the aluminum paste completely covers the open hole or the grooved area, but the part of the back passivation film is not covered by the aluminum paste, and after sintering, a local aluminum back field is formed in the open hole or the grooved area, and the part is The aluminum back field is in communication with the back electrode to form a double-sided light transmissive local aluminum back field solar cell.
  • the open or grooved areas of the present invention are all covered by linear aluminum paste.
  • the aluminum paste can be covered on the opening or the groove of the passivation film by sputtering, and the aluminum paste is covered to cover the opening or the groove without covering the entire passivation.
  • the film is prevailing, and the purpose is to prepare a local aluminum back field to form a double-sided light-transmissive local aluminum back-field solar cell, thereby improving the conversion efficiency of the solar cell.
  • the openings or slots in the present invention may or may not be parallel to each other, such as may be disposed at a certain angle. Among them, the opening or the groove is arranged in parallel with each other to have an optimal solution.
  • the opening of the present invention is plural, preferably spaced apart, the aperture D of the opening is 10 to 200 ⁇ m, and the spacing ⁇ 0 of the adjacent two holes is 100 to 1000 ⁇ m.
  • the width W1 of the groove according to the present invention is preferably 10 to 200 ⁇ m, and the pitch PI between adjacent grooves is preferably 200 to 1000 ⁇ m.
  • the linear aluminum paste in the present invention is directly connected to the back electrode or indirectly connected to the back electrode through other linear aluminum paste or the like to collect current.
  • the invention has the beneficial effects of: the double-sided transparent partial aluminum back-field crystalline silicon solar cell proposed by the invention, the solar cell of the structure, the back passivation layer (film) is not completely covered by the aluminum paste, and the light can be The back side of the battery is incident and absorbed, increasing the luminous flux, thereby increasing the current of the battery and the output power of the component, so that the photoelectric conversion efficiency of the battery and the component is improved; in addition, the amount of the aluminum paste can be reduced, and the cost can be saved.
  • FIG. 1 is a cross-sectional view of a double-sided light transmissive partial aluminum back field crystalline silicon solar cell according to Embodiment 1-4 of the present invention, wherein 5 is a silicon substrate; 6 is an emitter; 7 is a front side anti-reflection passivation film; 8 is a front side Electrode; 9, local aluminum back field; 1, back passivation film; 4 is back electrode;
  • FIG. 2 is a schematic view showing the light incident on the back side of the double-sided transparent partial aluminum back-field crystalline silicon solar cell in Embodiment 1-4 of the present invention, wherein 9 is a back passivation film, 10 is a back electrode; 11 is a partial aluminum back field. , 12 is incident light;
  • FIG. 3 is a schematic view of the back opening in the first and third embodiments of the present invention, wherein 1 is a back passivation film, 2 is an opening or a groove;
  • FIG. 4 is a schematic view of the back slot in the embodiments 2 and 4 of the present invention, In the figure, 3 is a linear aluminum paste, and 4 is a back electrode;
  • Figure 5 is a schematic view showing the back aluminum wire of the double-sided transparent partial aluminum back field in the embodiment 1-4 of the present invention.
  • FIG. 6 is a schematic view showing a back aluminum line of a double-sided transparent partial aluminum back field provided in Embodiment 5 of the present invention.
  • Fig. 7 is a schematic view showing the back aluminum wire of the double-sided transparent partial aluminum back field provided in Embodiment 6 of the present invention. detailed description
  • This embodiment illustrates a structure of a double-sided light-transmissive local aluminum back-field crystalline silicon solar cell and a preparation method thereof (the battery cross-sectional view is shown in FIG. 1), and the specific steps are as follows:
  • the chemical solution may be one or more mixed aqueous solutions of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives, and the cleaning time may be 0.5 to 60 minutes.
  • the temperature can be 5 ⁇ 90 °C;
  • C. After cleaning the above-mentioned velvet sheet, it is placed in a furnace tube of 700 ⁇ 1000 °C for phosphorus (P) diffusion to prepare an n-type emitter, and the diffusion time can be 70 ⁇ 150 minutes. After diffusion, the emitter sheet resistance is 50 ⁇ 150 Ohms/mouth;
  • E 5 ⁇ 30nm alumina is deposited on the back side (see Fig. 2), and then 60 ⁇ 200nm silicon nitride is deposited on the aluminum oxide to form a laminated passivation film for passivating the back surface and increasing back light reflection;
  • the film thickness can be 75 ⁇ 88nm, the refractive index can be between 1.9-2.3;
  • the opening diameter D is preferably 10 to 200 ⁇ m, and the hole pitch ⁇ 0 is preferably 100 to 1000 ⁇ m, as shown in FIG. 3;
  • back electrode printing printing the back electrode on the back of the silicon wafer (4) for component soldering, as shown in Figure 5;
  • back aluminum line printing printing aluminum wire (that is, the linear aluminum paste described above, the same below) (3) covering the opening area, the aluminum wire needs to be directly or indirectly connected with the back electrode to collect all the current, aluminum wire Width W2 is 20 ⁇ 2000 ⁇ , line spacing ⁇ 2 is 200 ⁇ ;
  • the front side metal electrode is printed by screen printing on the phosphorus diffusion surface (emitter surface) of the silicon wafer, and the metal used is silver (Ag);
  • the printed silicon wafer is sintered in a sintering furnace, and the sintering temperature is optimized to be 400-900 ° C.
  • the front metal silver passes through the SiNx passivation anti-reflection film to form an ohmic contact with the emitter.
  • the back aluminum wire and the silicon substrate of the open area react to form an aluminum silicon alloy and a local aluminum back field, thereby forming a double-sided light transmissive local aluminum back field solar cell, the cross-sectional view of which is shown in FIG.
  • the double-sided transparent partial aluminum back field crystalline silicon solar cell constructed by the above method comprises a silicon substrate (5), an emitter (6) disposed on the front surface of the silicon substrate (5), and a front side anti-reflection passivation film (7) And a front electrode (8), and a back passivation film (1) disposed on the back surface of the silicon substrate (5), a back electric field and a back electrode (4), and the back electric field is a local aluminum back field (9), which is blunt on the back side
  • the film (1) is perforated or grooved (2), and the open-hole or grooved area is covered with a linear aluminum paste (3) to cover the opening or the groove (2) area, and a part of the back passivation film is retained (1) Not covered by aluminum paste, after sintering, a local aluminum back field (9) is formed in the open or grooved (2) region, and the local aluminum back field (9) is connected to the back electrode (4);
  • a partial aluminum back field (9) is disposed on the passivation film (1) on the back side of the
  • the average electrical performance data of a set of partial back passivation batteries according to the above double-sided light transmission design is shown in Table 1, wherein the aluminum wire type is the double-sided transparent partial aluminum back field solar cell prepared in the embodiment, and the aluminum paste
  • the full cover type is the same as the other steps in the present embodiment.
  • the aluminum paste is covered on the entire back passivation film (layer) instead of the opening area in this embodiment.
  • the area is covered with aluminum paste, and the uncoated aluminum paste area is left on the back passivation film.
  • the results show that the double-sided transparent partial back passivation battery of the present invention can be improved compared with the conventional aluminum paste full coverage partial back passivation battery.
  • the current of the solar cell is increased by 0.1 to 0.3%.
  • This embodiment illustrates a double-sided light-transmissive local aluminum back-field crystalline silicon solar cell structure and a preparation method thereof (see FIG. 1 for a cross-sectional view of the battery). The specific steps are as follows:
  • the surface of the silicon wafer is cleaned and cleaned with a chemical solution.
  • the chemical solution is one or more mixed aqueous solutions of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives.
  • the cleaning time is 0.5 to 60 minutes, and the temperature is 5 ⁇ 90 ° C;
  • E. 5 ⁇ 30nm silicon oxide is deposited on the back side (see Figure 2), and then 60 ⁇ 200nm silicon nitride is deposited on the silicon oxide to form a laminated passivation film for passivating the back surface and increasing back light reflection.
  • PECVD grows SiOx/SiNx Laminating as a front passivation film and an anti-reflection layer, the total film thickness is 85 ⁇ 100-nm, and the effective refractive index is between 1.9 and 2.3;
  • the back passivation film (1) is grooved (2), the groove width W1 is 20 ⁇ 100 ⁇ , the line pitch P1 is 200 ⁇ 2000 ⁇ , and the dotted line can also be used when the groove is opened, as shown in Fig. 4 Shown
  • back electrode printing printing the back electrode on the back of the silicon wafer (4) for component soldering (see Figure 5);
  • back aluminum line printing printing aluminum wire (3) covering the grooved area, the aluminum wire needs to be directly or indirectly connected with the back electrode to collect all current, the width of the aluminum wire W2 is 20 ⁇ 2000 ⁇ , the line spacing ⁇ 2 is 200 ⁇ 2000 ⁇ ;
  • Front electrode printing The surface metal electrode is printed on the silicon phosphorus diffusion surface (emitter surface) by screen printing.
  • the metal used is silver (Ag);
  • J. High-temperature rapid sintering The printed silicon wafer is sintered in a sintering furnace, and the sintering temperature is optimized to be 400-900 ° C. After sintering, the front metal silver passes through the SiOx/SiNx passivation anti-reflection film and the emitter forms an ohm. Contact, the back aluminum wire and the silicon substrate of the grooved area react to form an aluminum-silicon alloy and a partial aluminum back field, thereby forming a double-sided light-transmissive local aluminum back-field solar cell, too
  • the specific structure of the anode battery is the same as in the first embodiment.
  • This embodiment illustrates a structure of a double-sided light-transmissive local aluminum back-field crystalline silicon solar cell and a preparation method thereof (the battery cross-sectional view is shown in FIG. 1), and the specific steps are as follows:
  • the sodium hydroxide deionized water solution is 0.5-5% by weight.
  • the surface texture is formed at a temperature of 75 to 90 ° C to form a suede structure;
  • the chemical solution may be one or more mixed aqueous solutions of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives, and the cleaning time may be 0.5 to 60 minutes.
  • the temperature can be 5 ⁇ 90 °C;
  • the above-mentioned velvet sheet After cleaning the above-mentioned velvet sheet, it is placed in a furnace tube of 700 ⁇ 1000 °C for phosphorus (P) diffusion to prepare an n-type emitter, and the diffusion time can be 70 ⁇ 150 minutes. After diffusion, the emitter sheet resistance is 50 ⁇ 150 Ohms/mouth;
  • E 5 ⁇ 30nm alumina is deposited on the back side (see Fig. 2), and then 60 ⁇ 200nm silicon nitride is deposited on the aluminum oxide to form a laminated passivation film for passivating the back surface and increasing back light reflection;
  • the film thickness can be 75 ⁇ 88nm, the refractive index can be between 1.9-2.3;
  • the opening diameter D is preferably 10 to 200 ⁇ m, and the hole pitch ⁇ 0 is preferably 100 to 1000 ⁇ m, as shown in FIG. 3;
  • back electrode printing printing the back electrode on the back of the silicon wafer (4) for component soldering, as shown in Figure 5;
  • Backside aluminum line printing Printing aluminum wire (ie the linear aluminum paste mentioned above) (3) Covering the opening area, the aluminum wire needs to be directly or indirectly connected with the back electrode to collect all the current, and the width of the aluminum wire W2 is 20 ⁇ 2000 ⁇ , line spacing ⁇ 2 is 200 ⁇ ;
  • the front side metal electrode is printed by screen printing on the phosphorus diffusion surface (emitter surface) of the silicon wafer, and the metal used is silver (Ag);
  • the printed silicon wafer is sintered in a sintering furnace, and the sintering temperature is optimized to be 400-900 ° C.
  • the front metal silver passes through the SiNx passivation anti-reflection film to form an ohmic contact with the emitter.
  • the aluminum substrate on the back side and the silicon substrate in the open area react to form an aluminum-silicon alloy and a local aluminum back field, thereby forming a double-sided light-transmissive local aluminum back-field solar cell.
  • the specific structure of the solar cell is the same as in the first embodiment.
  • This embodiment illustrates a double-sided light transmissive local aluminum back field crystalline silicon solar cell structure and a preparation method thereof (electrical See Figure 1 for the cross section of the pool. The specific steps are as follows:
  • the surface of the silicon wafer is cleaned and cleaned with a chemical solution.
  • the chemical solution is one or more mixed aqueous solutions of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives.
  • the cleaning time is 0.5 to 60 minutes, and the temperature is 5 ⁇ 90 ° C;
  • the above-mentioned diffused silicon wafer is etched by alkaline or acid wet etching to remove the n-type diffusion layer and the phosphosilicate glass on the back surface of the silicon wafer;
  • E 5 ⁇ 30 nm silicon oxide is deposited on the back surface (see FIG. 2), and then silicon oxide is used.
  • a silicon nitride layer of 60 to 200 nm is deposited thereon to form a laminated passivation film for passivating the back surface and increasing back light reflection.
  • PECVD grown SiOx/SiNx laminate as front passivation film and anti-reflection layer, with a total film thickness of 85 ⁇ 100-nm and an effective refractive index of 1.9-2.3;
  • the back passivation film (1) is grooved (2), the groove width W1 is 20-100 ⁇ , the line pitch P1 is 200 ⁇ 2000 ⁇ , and the dotted line can also be used when the groove is opened, as shown in Fig. 4 Shown
  • back electrode printing printing the back electrode on the back of the silicon wafer (4) for component soldering (see Figure 5);
  • back aluminum line printing printing aluminum wire (3) covering the slotted area, the aluminum wire needs to be directly or indirectly connected with the back electrode to collect all current, the width of the aluminum wire W2 is 20 ⁇ 2000 ⁇ , and the line spacing ⁇ 2 is 200 ⁇ 2000 ⁇ ;
  • Front electrode printing The surface metal electrode is printed on the silicon phosphorus diffusion surface (emitter surface) by screen printing.
  • the metal used is silver (Ag);
  • J. High-temperature rapid sintering The printed silicon wafer is sintered in a sintering furnace, and the sintering temperature is optimized to be 400-900 ° C. After sintering, the front metal silver passes through the SiOx/SiNx passivation anti-reflection film and the emitter forms an ohm. Contact, the back aluminum wire and the silicon substrate of the grooved area react to form an aluminum silicon alloy and a partial aluminum back field, thereby forming a double-sided light transmissive local aluminum back field solar cell, and the specific structure of the solar cell is the same as in the first embodiment.
  • the opening or the groove (2), the opening or the groove (2) are not arranged in parallel, adjacent There may be a certain angle between the opening or the slot (2).
  • the adjacent two-line aluminum paste (3) covered on the opening or slot (2) may not be arranged in parallel, but Have a certain angle.
  • the selection of crystalline silicon wafers, texturing, cleaning, phosphorus diffusion, de-back junction, deposition of backside passivation film, deposition of frontal anti-reflective passivation film, printing of positive electrodes, etc., and passivation film on the back (1)
  • the upper opening or the groove (2), the linear aluminum paste (3) is covered on the opening or the groove (2), and the like is the same as in the embodiment 1-4, and the difference from the embodiment 1-4 is as shown in the figure. 7
  • the back electrode uses a discontinuous back electrode, but a segmented back electrode. In order to connect the partial back electric field with the segmented back electrode, the linear aluminum paste is covered in the partition portion of the segmented back electrode.
  • the segmented back electrode is printed on the aluminum paste, and the aluminum paste is covered in the broken portion or the spaced portion of the segmented back electrode to form a local aluminum back field, wherein the local aluminum back field is in communication with the back electrode, and the portion is retained
  • the back passivation film is not covered by the aluminum paste.
  • the double-sided transparent partial aluminum back field crystalline silicon solar cell of the invention only needs to maintain the back electric field as a local aluminum back field, that is, the part of the back passivation film is not covered by the aluminum paste, and the partial back electric field and the back are simultaneously
  • the electrodes are connected, and the above are only some of the preferred embodiments of the invention, and are not intended to limit the invention.

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Abstract

A local aluminum back surface field solar battery with two light-pervious surfaces comprises a silicon substrate; an emitting electrode, a front antireflection passive film and a front electrode all disposed on a front surface of the silicon substrate; and a back passive film, a back surface field and a back electrode all disposed on a back surface of the silicon substrate. The back surface field is a local aluminum back surface field. A hole or a groove is formed in the back passive film, a region where the hole or the groove is formed is covered with linear aluminum paste, part of the back passive film is reserved not to be covered with the aluminum paste, and a local aluminum back surface field is formed in the region where the hole or the groove is formed after sintering. The local aluminum back surface field is in communication with the back electrode. The back passive layer (film) of the solar battery is not completely covered with the aluminum paste, the battery can absorb part of incident light or scattered light on the back, and currents of the battery and an assembly are increased, thereby improving the photoelectric conversion efficiency of the battery and the assembly. Also disclosed is a method for preparing the local aluminum back surface field crystalline silicon solar battery with two light-pervious surfaces.

Description

一种双面透光的局部铝背场太阳能电池及其制备方法 技术领域  Double-sided transparent partial aluminum back field solar cell and preparation method thereof
本发明属于光伏技术领域， 具体涉及一种双面透光的局部铝背场太阳能电池及其制备方 法。  The invention belongs to the field of photovoltaic technology, and particularly relates to a double-sided light-transmissive partial aluminum back-field solar cell and a preparation method thereof.
背景技术 Background technique
光伏技术是一门利用大面积的 p-n结二极管将太阳能转化为电能的技术。 这个 p-n结二 极管叫做太阳能电池。 制作太阳能电池的半导体材料都具有一定的禁带宽度， 当太阳能电池 受到太阳辐射时， 能量超过禁带宽度的光子在太阳电池中产生电子空穴对， p-n结将电子空穴 对分离， p-n结的非对称性决定了不同类型的光生载流子的流动方向，通过外部电路连接可以 向外输出功率。 这跟普通的电化学电池原理类似。  Photovoltaic technology is a technology that uses large-area p-n junction diodes to convert solar energy into electrical energy. This p-n junction diode is called a solar cell. The semiconductor materials for making solar cells all have a certain band gap. When the solar cells are exposed to solar radiation, photons with energy exceeding the forbidden band generate electron-hole pairs in the solar cell, and the pn junction separates electron-hole pairs, pn junctions. The asymmetry determines the flow direction of different types of photo-generated carriers, and the external circuit can be connected to output power. This is similar to the principle of an ordinary electrochemical battery.
工业化生产 p型晶硅太阳能电池通常采用全铝背场结构， 即背面整面印刷铝浆， 烧结后 形成铝背场。 这种结构的缺点是没有背面钝化和背面反射率低， 从而影响了电池的电压和电 流性能。 局部铝背场电池克服了以上缺点， 这种电池采用具有钝化效果的薄膜钝化电池背表 面同时增加背表面反射率。 钝化膜有效钝化硅材料表面存在的大量悬垂键和缺陷 （如位错， 晶界以及点缺陷等）， 从而降低光生载流子硅表面复合速率， 提高少数载流子的有效寿命，从 而促进太阳能电池光电转化效率的提升。 钝化膜同时具有增加背面反射的效果， 从而增加硅 体材料对太阳光的吸收， 提高光生载流子的浓度从而增加光电流密度。  Industrial production p-type crystalline silicon solar cells usually use an all-aluminum back-field structure, that is, the aluminum paste is printed on the entire surface of the back surface, and an aluminum back field is formed after sintering. The disadvantage of this structure is that there is no back passivation and low back reflectance, which affects the battery's voltage and current performance. The partial aluminum back field battery overcomes the above disadvantages. The battery uses a passivated film to passivate the back surface of the battery while increasing the back surface reflectivity. The passivation film effectively inactivates a large number of overhanging bonds and defects (such as dislocations, grain boundaries and point defects) on the surface of the silicon material, thereby reducing the recombination rate of the photogenerated carrier silicon surface and improving the effective lifetime of the minority carriers, thereby Promote the improvement of photoelectric conversion efficiency of solar cells. The passivation film also has the effect of increasing back reflection, thereby increasing the absorption of sunlight by the silicon material, increasing the concentration of photogenerated carriers and increasing the photocurrent density.
钝化膜的种类和制备方法包括： PECVD非晶硅薄膜、 PECVD SiCx薄膜、 热氧、 湿氧或 者旋涂形成的氧化硅薄膜、 Si02/SiNx叠层薄膜、 CVD、 MOCVD、 PECVD APCVD或者 ALD制备的 A1203薄膜、 Al203/SiNx叠层薄膜等等。 The types and preparation methods of the passivation film include: PECVD amorphous silicon film, PECVD SiCx film, thermal oxygen, wet oxygen or spin-on silicon oxide film, Si0 2 /SiNx laminated film, CVD, MOCVD, PECVD APCVD or ALD The prepared A1 2 0 3 film, Al 2 0 3 /SiNx laminated film, and the like.
为了能将电流导出， 通常需要在背面钝化膜上开孔或者开线， 再印刷铝浆烧结后形成局 部铝背场。 孔或者线的总面积一般占背面的 1-15%， 面积过小会增加背面的接触电阻， 过大 则增加了背面的复合速率， 两种情况都会影响电池的光电转化效率。 开孔或者开线一般采用 激光或者化学腐蚀的办法。 印刷铝浆一般采用全背场图形， 即铝浆覆盖除背电极以外的全部 背面区域。 这样， 背面入射或者散射的光线不能被电池吸收， 影响了光电转换效率。  In order to be able to conduct the current, it is usually necessary to open or open the back passivation film, and then the printed aluminum paste is sintered to form a local aluminum back field. The total area of the holes or wires generally accounts for 1-15% of the back surface. If the area is too small, the contact resistance on the back side will increase, and if it is too large, the recombination rate on the back side will increase. Both cases will affect the photoelectric conversion efficiency of the battery. Opening or opening is generally done by laser or chemical etching. Printed aluminum paste generally uses a full back field pattern, i.e., aluminum paste covers all backside areas except the back electrode. Thus, the light incident or scattered on the back side cannot be absorbed by the battery, which affects the photoelectric conversion efficiency.
发明内容 Summary of the invention
本发明的目的在于提供一种双面透光的局部铝背场晶体硅太阳能电池， 该太阳能电池通 过在晶体硅背面的钝化膜上设置局部铝背场， 形成双面透光结构， 不仅电池正面能接收和接 收入射或者散射的光线， 还能使背面也可以能够接收和吸收入射或者散射的光线， 从而增加 了太阳能电池的光电转换效率。 An object of the present invention is to provide a double-sided light-transmissive partial aluminum back-field crystalline silicon solar cell, which is provided with a double-sided light-transmissive structure by providing a local aluminum back field on a passivation film on the back surface of the crystalline silicon, not only a battery The front side receives and receives incident or scattered light, and also enables the back side to receive and absorb incident or scattered light, thereby increasing The photoelectric conversion efficiency of the solar cell.
本发明的目的还在于提供上述双面透光的局部铝背场晶体硅太阳能电池的制备方法， 该 制备方法工艺简单， 成本低。  Another object of the present invention is to provide a method for preparing the above-mentioned double-sided light-transmissive partial aluminum back field crystalline silicon solar cell, which is simple in process and low in cost.
本发明的第一个目的是通过如下技术方案来实现的： 一种双面透光的局部铝背场晶体硅 太阳能电池， 包括硅基体， 设于硅基体正面的发射极、 正面减反射钝化膜和正面电极， 以及 设于硅基体背面的背面钝化膜、 背电场和背电极， 所述背电场为局部铝背场， 其通过在背面 钝化膜上开孔或者开槽， 在开孔或者开槽区域采用线型铝浆覆盖所述开孔或者开槽区域， 并 保留部分背面钝化膜不被铝浆所覆盖， 烧结后在开孔或者开槽区域形成局部铝背场， 所述局 部铝背场与所述背电极相连通。  A first object of the present invention is achieved by the following technical solutions: A double-sided light-transmissive local aluminum back-field crystalline silicon solar cell comprising a silicon substrate, an emitter disposed on the front side of the silicon substrate, and a front side anti-reflection passivation a film and a front electrode, and a back passivation film, a back electric field and a back electrode provided on the back surface of the silicon substrate, wherein the back electric field is a partial aluminum back field, which is opened or grooved in the back passivation film, in the opening Or the grooved area covers the opening or the grooved area with a linear aluminum paste, and the partial back passivation film is not covered by the aluminum paste, and a local aluminum back field is formed in the open hole or the grooved area after sintering, A local aluminum back field is in communication with the back electrode.
作为本发明的优选方案， 本发明采用的技术方案是在背面钝化层 （膜） 上开孔或者开槽 之后印刷或者溅射多条铝线 （线型铝浆）覆盖开孔或者开槽区域， 保留部分背面钝化层（膜) 不被铝浆覆盖，印刷或者溅射的线型铝浆图形须要直接或者间接和背电极连接以便收集电流。  As a preferred embodiment of the present invention, the technical solution adopted by the present invention is to print or sputter a plurality of aluminum wires (linear aluminum paste) to cover the opening or the grooved area after opening or slotting the back passivation layer (film). The part of the back passivation layer (film) is not covered by the aluminum paste, and the printed or sputtered linear aluminum paste pattern needs to be directly or indirectly connected to the back electrode to collect current.
本发明中的双面透光的局部铝背场晶体硅太阳能电池， 其能有效促进太阳能电池光电性 能提升， 并能降低成本。  The double-sided light-transmissive partial aluminum back-field crystalline silicon solar cell of the invention can effectively promote the photoelectric performance of the solar cell and can reduce the cost.
本发明中的线型铝浆， 可以相互平行设置， 也可以呈一定夹角， 其中线型铝浆的宽度优 选为 20〜2000μηι， 相邻两线型铝浆的间距 Ρ2优选为 200〜2000μηι。  The linear aluminum paste in the present invention may be disposed in parallel with each other or at an angle, wherein the width of the linear aluminum paste is preferably 20 to 2000 μm, and the pitch Ρ2 of the adjacent two-line aluminum paste is preferably 200 to 2000 μm.
作为本发明中的一种优选方案， 本发明在背面钝化层 （膜） 上设置相互平行的开孔或者 开槽， 在开孔或者开槽上设置与所述开孔或者开槽形状相适配的铝浆， 使铝浆全部覆盖开孔 或者开槽区域， 但保留部分背面钝化膜不被铝浆所覆盖， 烧结后在开孔或者开槽区域形成局 部铝背场， 且所述局部铝背场与所述背电极保持连通， 从而形成双面透光的局部铝背场太阳 能电池。  As a preferred embodiment of the present invention, the present invention provides openings or slots parallel to each other on the back passivation layer (film), and is disposed on the openings or slots to conform to the shape of the openings or slots. The aluminum paste is disposed so that the aluminum paste completely covers the open hole or the grooved area, but the part of the back passivation film is not covered by the aluminum paste, and after sintering, a local aluminum back field is formed in the open hole or the grooved area, and the part is The aluminum back field is in communication with the back electrode to form a double-sided light transmissive local aluminum back field solar cell.
本发明所述开孔或者开槽区域必须全部被线型铝浆覆盖。  The open or grooved areas of the present invention must all be covered by linear aluminum paste.
本发明中的开孔或者开槽， 可以相互平行， 也可以不相互平行， 如可以按照一定的夹角 设置。 其中开孔或者开槽以相互平行设置有选优方案。  The openings or slots in the present invention may or may not be parallel to each other, such as may be disposed at a certain angle. Among them, the opening or the groove is arranged in parallel with each other to have an optimal solution.
本发明所述开孔优选为多个， 优选为相间隔设置， 所述开孔的孔径 D优选为 10〜200μηι， 孔间距 Ρ0优选为 100〜1000μηι。  Preferably, the openings of the present invention are plural, preferably spaced apart, the aperture D of the openings is preferably 10 to 200 μm, and the hole pitch Ρ0 is preferably 100 to 1000 μm.
本发明所述开槽的宽度 W1优选为 10〜200μηι， 相邻两开槽之间的间距 PI优选为 200〜通 0μηι。  The width W1 of the groove of the present invention is preferably 10 to 200 μm, and the pitch PI between adjacent grooves is preferably 200 to 0 μm.
本发明中的线型铝浆要和背电极直接连接或者间接通过其他线型铝浆等和背电极连接以 便收集电流。 本发明的第二个目的是通过以下技术方案来实现的： 上述的双面透光的局部铝背场晶体 硅太阳能电池的制备方法是： 选取晶体硅片， 制绒， 清洗， 磷扩散， 去背结， 沉积背面钝化 膜， 沉积正面减反射钝化膜， 在背面钝化膜上开孔或开槽， 印刷背电极， 在开孔或开槽上覆 盖线型铝浆， 其中保留部分背面钝化膜不被铝浆所覆盖， 印刷正面电极， 烧结后制成局部铝 背场， 所述局部铝背场与所述背电极相连通， 从而形成双面透光的局部铝背场晶体硅太阳能 电池。 The linear aluminum paste in the present invention is directly connected to the back electrode or indirectly connected to the back electrode through other linear aluminum paste or the like to collect current. The second object of the present invention is achieved by the following technical solutions: The above-mentioned double-sided light-transmissive partial aluminum back-field crystalline silicon solar cell is prepared by: selecting a crystalline silicon wafer, flocking, cleaning, phosphorus diffusion, Back junction, deposit backside passivation film, deposit front anti-reflective passivation film, open or groove on the back passivation film, print back electrode, cover linear aluminum paste on opening or slot, retain part of back The passivation film is not covered by the aluminum paste, the front electrode is printed, and after sintering, a partial aluminum back field is formed, and the partial aluminum back field is connected with the back electrode to form a double-sided transparent partial aluminum back field crystalline silicon. Solar battery.
本发明中的晶体硅片， 优选为 p型晶体硅片， 可以为 p型单晶或者多晶硅片。  The crystalline silicon wafer in the present invention is preferably a p-type crystalline silicon wafer, and may be a p-type single crystal or a polycrystalline silicon wafer.
其中制绒， 清洗， 磷扩散， 沉积钝化膜， 去背结， 印刷正电极和背电极等可以采用本领 域的常规技术手段。  Among them, texturing, cleaning, phosphorus diffusion, deposition of a passivation film, back-knotting, printing of a positive electrode and a back electrode can be carried out by conventional techniques in the field.
正面钝化减反射膜可以是氮化硅膜， 也可以是氮化硅 /氧化硅等的叠层膜。  The front passivation antireflection film may be a silicon nitride film or a laminated film of silicon nitride/silicon oxide or the like.
背面钝化膜， 除了可以采用氧化铝和氮化硅的叠层膜之外， 还可以采用氮化硅 /氧化硅叠 层膜等， 其中氮化硅 /氧化硅叠层膜中必须是氧化硅与晶体硅片直接接触； 还可以采用氮氧化 硅 /氮化硅叠层膜以及碳化硅 /氮化硅叠层膜等。  As the back passivation film, in addition to a laminated film of aluminum oxide and silicon nitride, a silicon nitride/silicon oxide laminated film or the like may be used, wherein silicon nitride/silicon oxide laminated film must be silicon oxide. Direct contact with the crystalline silicon wafer; a silicon oxynitride/silicon nitride stacked film and a silicon carbide/silicon nitride stacked film or the like can also be used.
开孔或者开槽可以采用本领域常规的技术手段， 如激光或者化学腐蚀的方法开孔或者开 槽等。 其中开孔可以开设连续的孔， 也可以开设具有一定间隔的开孔， 优选开设具有一定间 隔的开孔， 开槽可以采用虚线开槽， 也可以采用实线开槽， 优选采用实线开槽。  Opening or grooving may be performed by conventional techniques in the art such as laser or chemical etching to open or grooving. The opening may be provided with a continuous hole or an opening having a certain interval. Preferably, the opening is provided with a certain interval. The opening may be slotted by a broken line or slotted by a solid line, preferably by a solid line slot. .
本发明中的线型铝浆， 可以相互平行设置， 也可以呈一定夹角， 其中线型铝浆的宽度优 选为 20〜2000μηι， 相邻两线型铝浆的间距 Ρ2优选为 200〜2000μηι。  The linear aluminum paste in the present invention may be disposed in parallel with each other or at an angle, wherein the width of the linear aluminum paste is preferably 20 to 2000 μm, and the pitch Ρ2 of the adjacent two-line aluminum paste is preferably 200 to 2000 μm.
作为本发明中的一种优选方案， 本发明在背面钝化层 （膜） 上设置相互平行的开孔或者 开槽， 在开孔或者开槽上设置与所述开孔或者开槽形状相适配的铝浆， 使铝浆全部覆盖开孔 或者开槽区域， 但保留部分背面钝化膜不被铝浆所覆盖， 烧结后在开孔或者开槽区域形成局 部铝背场， 且所述局部铝背场与所述背电极保持连通， 从而形成双面透光的局部铝背场太阳 能电池。  As a preferred embodiment of the present invention, the present invention provides openings or slots parallel to each other on the back passivation layer (film), and is disposed on the openings or slots to conform to the shape of the openings or slots. The aluminum paste is disposed so that the aluminum paste completely covers the open hole or the grooved area, but the part of the back passivation film is not covered by the aluminum paste, and after sintering, a local aluminum back field is formed in the open hole or the grooved area, and the part is The aluminum back field is in communication with the back electrode to form a double-sided light transmissive local aluminum back field solar cell.
本发明所述开孔或者开槽区域全部被线型铝浆覆盖。 其中可以采用丝网印刷的方式， 也 可以采用溅射的方式在钝化膜上的开孔或者开槽上覆盖铝浆， 铝浆的覆盖以覆盖住开孔或者 开槽而不覆盖整个钝化膜为准， 目的在于制备局部铝背场， 形成双面透光的局部铝背场太阳 能电池， 从而提高太阳能电池的转换效率。  The open or grooved areas of the present invention are all covered by linear aluminum paste. In the screen printing method, the aluminum paste can be covered on the opening or the groove of the passivation film by sputtering, and the aluminum paste is covered to cover the opening or the groove without covering the entire passivation. The film is prevailing, and the purpose is to prepare a local aluminum back field to form a double-sided light-transmissive local aluminum back-field solar cell, thereby improving the conversion efficiency of the solar cell.
本发明中的开孔或者开槽， 可以相互平行， 也可以不相互平行， 如可以按照一定的夹角 设置。 其中开孔或者开槽以相互平行设置有选优方案。  The openings or slots in the present invention may or may not be parallel to each other, such as may be disposed at a certain angle. Among them, the opening or the groove is arranged in parallel with each other to have an optimal solution.
本发明所述开孔优选为多个， 优选相间隔设置， 所述开孔的孔径 D为 10〜200μηι， 相邻 两孔的间距 Ρ0为 100〜1000μηι。 本发明所述开槽的宽度 Wl优选为 10〜200μηι， 相邻两开槽之间的间距 PI优选为 200〜1000μηι。 Preferably, the opening of the present invention is plural, preferably spaced apart, the aperture D of the opening is 10 to 200 μm, and the spacing Ρ0 of the adjacent two holes is 100 to 1000 μm. The width W1 of the groove according to the present invention is preferably 10 to 200 μm, and the pitch PI between adjacent grooves is preferably 200 to 1000 μm.
本发明中的线型铝浆要和背电极直接连接或者间接通过其他线型铝浆等和背电极连接以 便收集电流。  The linear aluminum paste in the present invention is directly connected to the back electrode or indirectly connected to the back electrode through other linear aluminum paste or the like to collect current.
本发明的有益效果是： 本发明提出的双面透光的局部铝背场晶体硅太阳能电池， 这种结 构的太阳电池， 其背面钝化层 （膜） 没有完全被铝浆覆盖， 光线能够从电池背面入射并被吸 收， 增加了光通量， 从而提高电池的电流和组件的输出功率， 以使电池和组件的光电转换效 率得到提高； 另外还可以减少铝浆的用量， 节约成本。  The invention has the beneficial effects of: the double-sided transparent partial aluminum back-field crystalline silicon solar cell proposed by the invention, the solar cell of the structure, the back passivation layer (film) is not completely covered by the aluminum paste, and the light can be The back side of the battery is incident and absorbed, increasing the luminous flux, thereby increasing the current of the battery and the output power of the component, so that the photoelectric conversion efficiency of the battery and the component is improved; in addition, the amount of the aluminum paste can be reduced, and the cost can be saved.
以下结合附图和优选实施方案， 具体详细说明本发明的其他特征和优点。  Further features and advantages of the present invention are described in detail below with reference to the drawings and preferred embodiments.
附图说明 DRAWINGS
图 1是本发明实施例 1-4中双面透光局部铝背场晶体硅太阳能电池的截面图， 其中 5为硅基 体； 6为发射极； 7为正面减反射钝化膜； 8为正面电极； 9、 局部铝背场； 1、 背面钝化膜； 4 为背电极；  1 is a cross-sectional view of a double-sided light transmissive partial aluminum back field crystalline silicon solar cell according to Embodiment 1-4 of the present invention, wherein 5 is a silicon substrate; 6 is an emitter; 7 is a front side anti-reflection passivation film; 8 is a front side Electrode; 9, local aluminum back field; 1, back passivation film; 4 is back electrode;
图 2是本发明中实施例 1-4中双面透光局部铝背场晶体硅太阳能电池背面接受光入射的示 意图， 其中 9为背面钝化膜， 10为背电极； 11为局部铝背场， 12为入射光线；  2 is a schematic view showing the light incident on the back side of the double-sided transparent partial aluminum back-field crystalline silicon solar cell in Embodiment 1-4 of the present invention, wherein 9 is a back passivation film, 10 is a back electrode; 11 is a partial aluminum back field. , 12 is incident light;
图 3是本发明实施例 1和 3中背面开孔示意图， 其中图中 1为背面钝化膜， 2为开孔或开槽； 图 4是本发明实施例 2和 4中背面开槽示意图， 图中 3为线型铝浆， 4为背电极；  3 is a schematic view of the back opening in the first and third embodiments of the present invention, wherein 1 is a back passivation film, 2 is an opening or a groove; FIG. 4 is a schematic view of the back slot in the embodiments 2 and 4 of the present invention, In the figure, 3 is a linear aluminum paste, and 4 is a back electrode;
图 5是本发明实施例 1-4中双面透光局部铝背场的背面铝线示意图；  Figure 5 is a schematic view showing the back aluminum wire of the double-sided transparent partial aluminum back field in the embodiment 1-4 of the present invention;
图 6是本发明实施例 5中提供的双面透光局部铝背场的背面铝线示意图；  6 is a schematic view showing a back aluminum line of a double-sided transparent partial aluminum back field provided in Embodiment 5 of the present invention;
图 7是本发明实施例 6中提供的双面透光局部铝背场的背面铝线示意图。 具体实施方式  Fig. 7 is a schematic view showing the back aluminum wire of the double-sided transparent partial aluminum back field provided in Embodiment 6 of the present invention. detailed description
实施例 1  Example 1
本实施例说明了一种双面透光的局部铝背场晶体硅太阳能电池的结构以及其制备方法 (电池截面图见图 1 )， 具体步骤如下：  This embodiment illustrates a structure of a double-sided light-transmissive local aluminum back-field crystalline silicon solar cell and a preparation method thereof (the battery cross-sectional view is shown in FIG. 1), and the specific steps are as follows:
Α、选取电阻率在 0.1〜10 Q*cm的轻掺杂的 ρ型单晶硅片， 将其置于制绒槽中， 在重量百 分含量为 0.5〜5%的氢氧化钠去离子水溶液中， 在温度为 75〜90°C的条件下进行表面织构化形 成绒面结构；  Α, select a lightly doped p-type single crystal silicon wafer with a resistivity of 0.1~10 Q*cm, place it in a fluffing bath, and dehydrate the sodium hydroxide solution in a weight percentage of 0.5~5%. The surface texture is formed at a temperature of 75 to 90 ° C to form a suede structure;
B、 对硅片表面进行清洗， 清洗采用化学溶液进行清洗， 化学溶液可以为氢氟酸、 硝酸、 盐酸、 硫酸及其他添加剂的一种或多种混合水溶液， 清洗时间可以为 0.5〜60分钟， 温度可以 为 5〜90°C ; C、 将以上制绒片进行清洗后， 置于 700〜1000°C的炉管中进行磷（P)扩散制备 n型发射 极， 扩散时间可以为 70〜150分钟， 扩散后发射极方块电阻为 50〜150 Ohms/口； B. Clean the surface of the silicon wafer, and clean it with a chemical solution. The chemical solution may be one or more mixed aqueous solutions of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives, and the cleaning time may be 0.5 to 60 minutes. The temperature can be 5~90 °C; C. After cleaning the above-mentioned velvet sheet, it is placed in a furnace tube of 700~1000 °C for phosphorus (P) diffusion to prepare an n-type emitter, and the diffusion time can be 70~150 minutes. After diffusion, the emitter sheet resistance is 50~150 Ohms/mouth;
D、 将上述扩散后硅片利用碱性或酸性湿法刻蚀去除硅片背面的 n型扩散层和磷硅玻璃; D. removing the n-type diffusion layer and the phosphosilicate glass on the back side of the silicon wafer by using the alkaline or acidic wet etching on the diffused silicon wafer;
E、 背面沉积 5〜30nm氧化铝（见图 2)， 再在氧化铝上沉积 60〜200nm氮化硅形成叠层钝 化膜用于钝化背表面并增加背面光反射； E, 5~30nm alumina is deposited on the back side (see Fig. 2), and then 60~200nm silicon nitride is deposited on the aluminum oxide to form a laminated passivation film for passivating the back surface and increasing back light reflection;
F、 PECVD生长 SiNx作为正面钝化膜和减反射层， 膜厚可以为 75〜88nm， 折射率可以 为 1.9-2.3之间;  F, PECVD growth SiNx as a front passivation film and anti-reflection layer, the film thickness can be 75~88nm, the refractive index can be between 1.9-2.3;
G、 利用激光的方法在背面钝化膜 （1 )上开孔（2)， 开孔直径 D优选为 10〜200μηι， 孔 间距 Ρ0优选为 100〜1000μηι， 如图 3中所示；  G. Opening a hole (2) in the back passivation film (1) by a laser method, the opening diameter D is preferably 10 to 200 μm, and the hole pitch Ρ0 is preferably 100 to 1000 μm, as shown in FIG. 3;
Η、 背面电极印刷： 在硅片背面印刷背电极 （4) 用于组件焊接， 如图 5中所示；  Η, back electrode printing: printing the back electrode on the back of the silicon wafer (4) for component soldering, as shown in Figure 5;
I、 背面铝线印刷： 印刷铝线 （即上文所述的线型铝浆， 下同） （3 )覆盖开孔区域， 铝线 须要与背电极直接或者间接连接将电流全部收集， 铝线宽度 W2为 20〜2000μηι， 线间距 Ρ2 为 200〜通 Ομηι;  I, back aluminum line printing: printing aluminum wire (that is, the linear aluminum paste described above, the same below) (3) covering the opening area, the aluminum wire needs to be directly or indirectly connected with the back electrode to collect all the current, aluminum wire Width W2 is 20~2000μηι, line spacing Ρ2 is 200~通Ομηι;
J、正面电极印刷： 在硅片磷扩散面（发射极面）上采用丝网印刷方法印刷正面金属电极， 所采用的金属为银 （Ag);  J. Front electrode printing: The front side metal electrode is printed by screen printing on the phosphorus diffusion surface (emitter surface) of the silicon wafer, and the metal used is silver (Ag);
K、 高温快速烧结： 将印刷完的硅片置于烧结炉中烧结， 优化烧结温度为 400〜900°C，经 烧结后正面金属银穿过 SiNx钝化减反膜与发射极形成欧姆接触，背面铝线和开孔区域的硅基 体反应形成铝硅合金和局部铝背场， 从而形成双面透光的局部铝背场太阳能电池， 其截面图 如图 1中所示。  K, high-temperature rapid sintering: The printed silicon wafer is sintered in a sintering furnace, and the sintering temperature is optimized to be 400-900 ° C. After sintering, the front metal silver passes through the SiNx passivation anti-reflection film to form an ohmic contact with the emitter. The back aluminum wire and the silicon substrate of the open area react to form an aluminum silicon alloy and a local aluminum back field, thereby forming a double-sided light transmissive local aluminum back field solar cell, the cross-sectional view of which is shown in FIG.
采用上述方法构成的双面透光的局部铝背场晶体硅太阳能电池， 包括硅基体 （5 )， 设于 硅基体 （5 ) 正面的发射极 （6)、 正面减反射钝化膜 （7) 和正面电极 （8)， 以及设于硅基体 ( 5 )背面的背面钝化膜 （1 )、 背电场和背电极 （4)， 背电场为局部铝背场 （9)， 其通过在背 面钝化膜 （1 ) 上开孔或者开槽 （2)， 在开孔或者开槽区域采用线型铝浆 （3 ) 覆盖开孔或者 开槽 （2) 区域， 并保留部分背面钝化膜 （1 ) 不被铝浆所覆盖， 烧结后在开孔或者开槽 （2) 区域形成局部铝背场 （9)， 局部铝背场 （9)与背电极相连通 （4); 该太阳能电池通过在晶体 硅背面的钝化膜 （1 )上设置局部铝背场 （9)， 形成双面透光结构， 不仅电池正面能接收和接 收入射或者散射的光线， 还能使背面也可以能够接收和吸收入射或者散射的光线（12)， 从而 增加了太阳能电池的光电转换效率。  The double-sided transparent partial aluminum back field crystalline silicon solar cell constructed by the above method comprises a silicon substrate (5), an emitter (6) disposed on the front surface of the silicon substrate (5), and a front side anti-reflection passivation film (7) And a front electrode (8), and a back passivation film (1) disposed on the back surface of the silicon substrate (5), a back electric field and a back electrode (4), and the back electric field is a local aluminum back field (9), which is blunt on the back side The film (1) is perforated or grooved (2), and the open-hole or grooved area is covered with a linear aluminum paste (3) to cover the opening or the groove (2) area, and a part of the back passivation film is retained (1) Not covered by aluminum paste, after sintering, a local aluminum back field (9) is formed in the open or grooved (2) region, and the local aluminum back field (9) is connected to the back electrode (4); A partial aluminum back field (9) is disposed on the passivation film (1) on the back side of the crystalline silicon to form a double-sided light-transmissive structure, so that not only the front side of the battery can receive and receive incident or scattered light, but also the back side can also receive and absorb. Incident or scattered light (12), thereby increasing solar power The photoelectric conversion efficiency of the pool.
按照上述双面透光设计的一组局部背钝化电池的平均电性能数据如表 1所示， 其中铝线 型为本实施例中制备的双面透光局部铝背场太阳能电池， 铝浆全覆盖型为其他步骤与本实施 例相同， 仅铝浆覆盖时， 将铝浆料覆盖整个背面钝化膜 （层） 上， 而非本实施例中在开孔区 域覆盖铝浆， 同时使背面钝化膜上保留有未覆盖铝浆区域， 结果表明， 相比常规铝浆全覆盖 局部背钝化电池， 本发明的双面透光局部背钝化电池能够提高太阳能电池的电流， 效率提升 达到 0.1〜0.3%。 The average electrical performance data of a set of partial back passivation batteries according to the above double-sided light transmission design is shown in Table 1, wherein the aluminum wire type is the double-sided transparent partial aluminum back field solar cell prepared in the embodiment, and the aluminum paste The full cover type is the same as the other steps in the present embodiment. When only the aluminum paste is covered, the aluminum paste is covered on the entire back passivation film (layer) instead of the opening area in this embodiment. The area is covered with aluminum paste, and the uncoated aluminum paste area is left on the back passivation film. The results show that the double-sided transparent partial back passivation battery of the present invention can be improved compared with the conventional aluminum paste full coverage partial back passivation battery. The current of the solar cell is increased by 0.1 to 0.3%.
表 1 实施例 1制备的双面透光局部铝背场太阳能电池的性能参数
Figure imgf000008_0001
Table 1 Performance parameters of the double-sided transparent partial aluminum back field solar cell prepared in Example 1
Figure imgf000008_0001
实施例 2  Example 2
本实施例说明了一种双面透光的局部铝背场晶体硅太阳能电池结构以及其制备方法 （电 池截面图见附图 1 )， 具体步骤如下：  This embodiment illustrates a double-sided light-transmissive local aluminum back-field crystalline silicon solar cell structure and a preparation method thereof (see FIG. 1 for a cross-sectional view of the battery). The specific steps are as follows:
A、选取电阻率在 0.1〜10 Q*cm的轻掺杂的 p型多晶硅片， 将其置于制绒槽中， 在重量百 分含量为 0.5〜5%的氢氧化钠去离子水溶液中， 在温度为 75〜90°C的条件下进行表面织构化形 成绒面结构；  A. Select a lightly doped p-type polycrystalline silicon wafer having a resistivity of 0.1 to 10 Q*cm, and place it in a fluffing bath in a sodium hydroxide deionized water solution having a weight percentage of 0.5 to 5%. Surface texturing at a temperature of 75 to 90 ° C to form a suede structure;
B、 对硅片表面进行清洗， 采用化学溶液进行清洗， 化学溶液为氢氟酸、 硝酸、 盐酸、 硫酸及其他添加剂的一种或多种混合水溶液， 清洗时间为 0.5〜60分钟， 温度为 5〜90°C ;  B. The surface of the silicon wafer is cleaned and cleaned with a chemical solution. The chemical solution is one or more mixed aqueous solutions of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives. The cleaning time is 0.5 to 60 minutes, and the temperature is 5 ~90 ° C;
C、 将以上制绒片进行清洗后， 置于 700〜1000°C的炉管中进行磷（P)扩散制备 n型发射 极， 扩散时间为 70〜150分钟， 扩散后发射极方块电阻为 50〜100 Ohms/口；  C. After cleaning the above-mentioned velvet sheet, it is placed in a furnace tube of 700~1000 °C for phosphorus (P) diffusion to prepare an n-type emitter, the diffusion time is 70~150 minutes, and the diffusion square resistance is 50 after diffusion. ~100 Ohms/mouth;
D、 将上述扩散后硅片利用碱性或酸性湿法刻蚀去除硅片背面的 n型扩散层和磷硅玻璃; D. removing the n-type diffusion layer and the phosphosilicate glass on the back side of the silicon wafer by using the alkaline or acidic wet etching on the diffused silicon wafer;
E、 背面沉积 5〜30nm氧化硅（见图 2)， 再在氧化硅上沉积 60〜200nm氮化硅形成叠层钝 化膜用于钝化背表面并增加背面光反射， PECVD生长 SiOx/SiNx叠层作为正面钝化膜和减反 射层， 总膜厚为 85〜100-nm， 有效折射率 1.9〜2.3之间； E. 5~30nm silicon oxide is deposited on the back side (see Figure 2), and then 60~200nm silicon nitride is deposited on the silicon oxide to form a laminated passivation film for passivating the back surface and increasing back light reflection. PECVD grows SiOx/SiNx Laminating as a front passivation film and an anti-reflection layer, the total film thickness is 85~100-nm, and the effective refractive index is between 1.9 and 2.3;
F、 利用激光的方法在背面钝化膜 （1 ) 开槽 （2)， 开槽宽度 W1为 20〜100μηι， 线间距 P1为 200〜2000 μηι， 开槽时也可采用虚线方式， 如图 4所示；  F. Using the laser method, the back passivation film (1) is grooved (2), the groove width W1 is 20~100μηι, the line pitch P1 is 200~2000 μηι, and the dotted line can also be used when the groove is opened, as shown in Fig. 4 Shown
G、 背面电极印刷： 在硅片背面印刷背电极 （4) 用于组件焊接 (见图 5);  G, back electrode printing: printing the back electrode on the back of the silicon wafer (4) for component soldering (see Figure 5);
H、 背面铝线印刷： 印刷铝线 （3 ) 覆盖开槽区域， 铝线须要与背电极直接或者间接连接 将电流全部收集， 铝线宽度 W2为 20〜2000μηι， 线间距 Ρ2为 200〜2000μηι;  H, back aluminum line printing: printing aluminum wire (3) covering the grooved area, the aluminum wire needs to be directly or indirectly connected with the back electrode to collect all current, the width of the aluminum wire W2 is 20~2000μηι, the line spacing Ρ2 is 200~2000μηι;
I、 正面电极印刷： 在硅片磷扩散面 （发射极面） 上采用丝网印刷方法印刷正面金属电极 所采用的金属为银 （Ag);  I. Front electrode printing: The surface metal electrode is printed on the silicon phosphorus diffusion surface (emitter surface) by screen printing. The metal used is silver (Ag);
J、 高温快速烧结： 将印刷完的硅片置于烧结炉中烧结， 优化烧结温度为 400〜900°C， 经 烧结后正面金属银穿过 SiOx/SiNx钝化减反膜与发射极形成欧姆接触， 背面铝线和开槽区域 的硅基体反应形成铝硅合金和局部铝背场， 从而形成双面透光的局部铝背场太阳能电池， 太 阳电池的具体结构同实施例 1。 J. High-temperature rapid sintering: The printed silicon wafer is sintered in a sintering furnace, and the sintering temperature is optimized to be 400-900 ° C. After sintering, the front metal silver passes through the SiOx/SiNx passivation anti-reflection film and the emitter forms an ohm. Contact, the back aluminum wire and the silicon substrate of the grooved area react to form an aluminum-silicon alloy and a partial aluminum back field, thereby forming a double-sided light-transmissive local aluminum back-field solar cell, too The specific structure of the anode battery is the same as in the first embodiment.
实施例 3  Example 3
本实施例说明了一种双面透光的局部铝背场晶体硅太阳能电池的结构以及其制备方法 (电池截面图见图 1 )， 具体步骤如下：  This embodiment illustrates a structure of a double-sided light-transmissive local aluminum back-field crystalline silicon solar cell and a preparation method thereof (the battery cross-sectional view is shown in FIG. 1), and the specific steps are as follows:
A、选取电阻率在 0.1〜10 Q*cm的轻掺杂的 p型单晶硅片， 将其置于制绒槽中， 在重量百 分含量为 0.5〜5%的氢氧化钠去离子水溶液中， 在温度为 75〜90°C的条件下进行表面织构化形 成绒面结构；  A. Select a lightly doped p-type single crystal silicon wafer with a resistivity of 0.1 to 10 Q*cm, and place it in a fluffing bath. The sodium hydroxide deionized water solution is 0.5-5% by weight. The surface texture is formed at a temperature of 75 to 90 ° C to form a suede structure;
B、 对硅片表面进行清洗， 清洗采用化学溶液进行清洗， 化学溶液可以为氢氟酸、 硝酸、 盐酸、 硫酸及其他添加剂的一种或多种混合水溶液， 清洗时间可以为 0.5〜60分钟， 温度可以 为 5〜90°C ;  B. Clean the surface of the silicon wafer, and clean it with a chemical solution. The chemical solution may be one or more mixed aqueous solutions of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives, and the cleaning time may be 0.5 to 60 minutes. The temperature can be 5~90 °C;
C、 将以上制绒片进行清洗后， 置于 700〜1000°C的炉管中进行磷（P)扩散制备 n型发射 极， 扩散时间可以为 70〜150分钟， 扩散后发射极方块电阻为 50〜150 Ohms/口；  C. After cleaning the above-mentioned velvet sheet, it is placed in a furnace tube of 700~1000 °C for phosphorus (P) diffusion to prepare an n-type emitter, and the diffusion time can be 70~150 minutes. After diffusion, the emitter sheet resistance is 50~150 Ohms/mouth;
D、 将上述扩散后硅片利用碱性或酸性湿法刻蚀去除硅片背面的 n型扩散层和磷硅玻璃; D. removing the n-type diffusion layer and the phosphosilicate glass on the back side of the silicon wafer by using the alkaline or acidic wet etching on the diffused silicon wafer;
E、 背面沉积 5〜30nm氧化铝（见图 2)， 再在氧化铝上沉积 60〜200nm氮化硅形成叠层钝 化膜用于钝化背表面并增加背面光反射； E, 5~30nm alumina is deposited on the back side (see Fig. 2), and then 60~200nm silicon nitride is deposited on the aluminum oxide to form a laminated passivation film for passivating the back surface and increasing back light reflection;
F、 PECVD生长 SiNx作为正面钝化膜和减反射层， 膜厚可以为 75〜88nm， 折射率可以 为 1.9-2.3之间;  F, PECVD growth SiNx as a front passivation film and anti-reflection layer, the film thickness can be 75~88nm, the refractive index can be between 1.9-2.3;
G、 利用化学腐蚀的方法在背面钝化膜（1 )上开孔（2)， 开孔直径 D优选为 10〜200μηι， 孔间距 Ρ0优选为 100〜1000μηι， 如图 3中所示；  G. Opening a hole (2) in the back passivation film (1) by a chemical etching method, the opening diameter D is preferably 10 to 200 μm, and the hole pitch Ρ0 is preferably 100 to 1000 μm, as shown in FIG. 3;
Η、 背面电极印刷： 在硅片背面印刷背电极 （4) 用于组件焊接， 如图 5中所示； Η, back electrode printing: printing the back electrode on the back of the silicon wafer (4) for component soldering, as shown in Figure 5;
I、 背面铝线印刷： 印刷铝线 （即上文所述的线型铝浆） （3 ) 覆盖开孔区域， 铝线须要与 背电极直接或者间接连接将电流全部收集， 铝线宽度 W2为 20〜2000μηι， 线间距 Ρ2为 200〜通 Ομηι; I. Backside aluminum line printing: Printing aluminum wire (ie the linear aluminum paste mentioned above) (3) Covering the opening area, the aluminum wire needs to be directly or indirectly connected with the back electrode to collect all the current, and the width of the aluminum wire W2 is 20~2000μηι, line spacing Ρ2 is 200~通Ομηι;
J、正面电极印刷： 在硅片磷扩散面（发射极面）上采用丝网印刷方法印刷正面金属电极， 所采用的金属为银 （Ag);  J. Front electrode printing: The front side metal electrode is printed by screen printing on the phosphorus diffusion surface (emitter surface) of the silicon wafer, and the metal used is silver (Ag);
K、 高温快速烧结： 将印刷完的硅片置于烧结炉中烧结， 优化烧结温度为 400〜900°C，经 烧结后正面金属银穿过 SiNx钝化减反膜与发射极形成欧姆接触，背面铝线和开孔区域的硅基 体反应形成铝硅合金和局部铝背场， 从而形成双面透光的局部铝背场太阳能电池， 太阳电池 的具体结构同实施例 1。  K, high-temperature rapid sintering: The printed silicon wafer is sintered in a sintering furnace, and the sintering temperature is optimized to be 400-900 ° C. After sintering, the front metal silver passes through the SiNx passivation anti-reflection film to form an ohmic contact with the emitter. The aluminum substrate on the back side and the silicon substrate in the open area react to form an aluminum-silicon alloy and a local aluminum back field, thereby forming a double-sided light-transmissive local aluminum back-field solar cell. The specific structure of the solar cell is the same as in the first embodiment.
实施例 4  Example 4
本实施例说明了一种双面透光的局部铝背场晶体硅太阳能电池结构以及其制备方法 （电 池截面图见附图 1 )， 具体步骤如下： This embodiment illustrates a double-sided light transmissive local aluminum back field crystalline silicon solar cell structure and a preparation method thereof (electrical See Figure 1 for the cross section of the pool. The specific steps are as follows:
A、选取电阻率在 Ο.Ι ΙΟ Ω-cm的轻掺杂的 p型多晶硅片， 将其置于制绒槽中， 在重量百 分含量为 0.5〜5%的氢氧化钠去离子水溶液中， 在温度为 75〜90°C的条件下进行表面织构化形 成绒面结构；  A. Select a lightly doped p-type polycrystalline silicon wafer with a resistivity of Ο.Ι ΙΟ Ω-cm, and place it in a fluffing bath in a deionized water solution of sodium hydroxide at a weight percentage of 0.5 to 5%. Surface texturing to form a suede structure at a temperature of 75 to 90 ° C;
B、 对硅片表面进行清洗， 采用化学溶液进行清洗， 化学溶液为氢氟酸、 硝酸、 盐酸、 硫酸及其他添加剂的一种或多种混合水溶液， 清洗时间为 0.5〜60分钟， 温度为 5〜90°C ;  B. The surface of the silicon wafer is cleaned and cleaned with a chemical solution. The chemical solution is one or more mixed aqueous solutions of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives. The cleaning time is 0.5 to 60 minutes, and the temperature is 5 ~90 ° C;
C、 将以上制绒片进行清洗后， 置于 700〜1000°C的炉管中进行磷（P)扩散制备 n型发射 极， 扩散时间为 70〜150 分钟， 扩散后发射极方块电阻为 50〜100 Ohms/D；  C. After cleaning the above-mentioned velvet sheet, it is placed in a furnace tube of 700~1000 °C for phosphorus (P) diffusion to prepare an n-type emitter, the diffusion time is 70~150 minutes, and the emitter sheet resistance after diffusion is 50. ~100 Ohms/D;
D、 将上述扩散后硅片利用碱性或酸性湿法刻蚀去除硅片背面的 n型扩散层和磷硅玻璃; E、 背面沉积 5〜30nm氧化硅（见图 2)， 再在氧化硅上沉积 60〜200nm氮化硅形成叠层钝 化膜用于钝化背表面并增加背面光反射。 PECVD生长 SiOx/SiNx叠层作为正面钝化膜和减反 射层， 总膜厚为 85〜100-nm， 有效折射率 1.9-2.3之间；  D. The above-mentioned diffused silicon wafer is etched by alkaline or acid wet etching to remove the n-type diffusion layer and the phosphosilicate glass on the back surface of the silicon wafer; E, 5~30 nm silicon oxide is deposited on the back surface (see FIG. 2), and then silicon oxide is used. A silicon nitride layer of 60 to 200 nm is deposited thereon to form a laminated passivation film for passivating the back surface and increasing back light reflection. PECVD grown SiOx/SiNx laminate as front passivation film and anti-reflection layer, with a total film thickness of 85~100-nm and an effective refractive index of 1.9-2.3;
F、 利用化学腐蚀的方法在背面钝化膜 （1 ) 开槽 （2)， 开槽宽度 W1为 20-100μηι， 线间 距 P1为 200〜2000μηι， 开槽时也可采用虚线方式， 如图 4所示；  F. Using the chemical etching method, the back passivation film (1) is grooved (2), the groove width W1 is 20-100μηι, the line pitch P1 is 200~2000μηι, and the dotted line can also be used when the groove is opened, as shown in Fig. 4 Shown
G、 背面电极印刷： 在硅片背面印刷背电极 （4) 用于组件焊接 (见图 5);  G, back electrode printing: printing the back electrode on the back of the silicon wafer (4) for component soldering (see Figure 5);
H、 背面铝线印刷： 印刷铝线 （3 ) 覆盖开槽区域， 铝线须要与背电极直接或者间接连接 将电流全部收集， 铝线宽度 W2为 20〜2000μηι， 线间距 Ρ2为 200〜2000μηι; H, back aluminum line printing: printing aluminum wire (3) covering the slotted area, the aluminum wire needs to be directly or indirectly connected with the back electrode to collect all current, the width of the aluminum wire W2 is 20~2000μηι, and the line spacing Ρ2 is 200~2000μηι ;
I、 正面电极印刷： 在硅片磷扩散面 （发射极面） 上采用丝网印刷方法印刷正面金属电极 所采用的金属为银 （Ag);  I. Front electrode printing: The surface metal electrode is printed on the silicon phosphorus diffusion surface (emitter surface) by screen printing. The metal used is silver (Ag);
J、 高温快速烧结： 将印刷完的硅片置于烧结炉中烧结， 优化烧结温度为 400〜900°C， 经 烧结后正面金属银穿过 SiOx/SiNx钝化减反膜与发射极形成欧姆接触， 背面铝线和开槽区域 的硅基体反应形成铝硅合金和局部铝背场， 从而形成双面透光的局部铝背场太阳能电池， 太 阳电池的具体结构同实施例 1。  J. High-temperature rapid sintering: The printed silicon wafer is sintered in a sintering furnace, and the sintering temperature is optimized to be 400-900 ° C. After sintering, the front metal silver passes through the SiOx/SiNx passivation anti-reflection film and the emitter forms an ohm. Contact, the back aluminum wire and the silicon substrate of the grooved area react to form an aluminum silicon alloy and a partial aluminum back field, thereby forming a double-sided light transmissive local aluminum back field solar cell, and the specific structure of the solar cell is the same as in the first embodiment.
实施例 5  Example 5
与实施例 1-4不同的是， 如图 6中所示， 在背面钝化膜 （1 ) 开孔或开槽 （2)， 开孔或开 槽 （2) 并非是相平行设置， 相邻开孔或开槽 （2) 之间可以具有一定的夹角， 同理， 在开孔 或开槽 （2) 上覆盖的相邻两线型铝浆 （3 ) 也可以不平行设置， 而是具有一定的夹角。  Different from Embodiment 1-4, as shown in FIG. 6, in the back passivation film (1), the opening or the groove (2), the opening or the groove (2) are not arranged in parallel, adjacent There may be a certain angle between the opening or the slot (2). Similarly, the adjacent two-line aluminum paste (3) covered on the opening or slot (2) may not be arranged in parallel, but Have a certain angle.
实施例 6  Example 6
首先， 关于晶体硅片的选取， 制绒， 清洗， 磷扩散， 去背结， 沉积背面钝化膜， 沉积正 面减反射钝化膜， 印刷正电极等工序， 以及在背面钝化膜 （1 )上开孔或开槽 （2)， 在开孔或 开槽 （2) 上覆盖线型铝浆 （3 ) 等与实施例 1-4中相同， 与实施例 1-4不同的是， 如图 7中 所示， 背电极采用的是非连续式背电极， 而是分段式背电极， 为了使局部背电场与分段式背 电极相连通， 在分段式背电极的分隔部分， 覆盖线型铝浆 （3 )， 并保留部分背面钝化膜不被 铝浆所覆盖， 烧结后制成局部铝背场， 且所述局部铝背场与所述背电极相连通， 从而形成双 面透光的局部铝背场晶体硅太阳能电池。 以上仅列举部分优选的具体实施例对本发明进行说明。 需要指出的是， 以上实施例只用 于对本发明作进一步说明， 不代表本发明的保护范围， 其他人根据本发明的提示做出的非本 质的修改和调整， 如在非平行设置的线型铝浆上印刷分段式背电极， 在分段式背电极的断开 部分或者间隔部分覆盖铝浆经烧结形成局部铝背场， 其中局部铝背场与所述背电极相连通， 且保留部分背面钝化膜不被铝浆所覆盖， 这种结构的局部铝背场太阳能电池， 以及开孔的形 状为非圆孔等， 仍属于本发明的保护范围。 本发明中的双面透光的局部铝背场晶体硅太阳能 电池， 只需要保持背电场为局部铝背场， 即保留部分背面钝化膜不被铝浆所覆盖， 同时将局 部背电场与背电极相连通即可， 以上仅为本发明列举的一些优选的实施方式， 并不是对本发 明的限定。 First, the selection of crystalline silicon wafers, texturing, cleaning, phosphorus diffusion, de-back junction, deposition of backside passivation film, deposition of frontal anti-reflective passivation film, printing of positive electrodes, etc., and passivation film on the back (1) The upper opening or the groove (2), the linear aluminum paste (3) is covered on the opening or the groove (2), and the like is the same as in the embodiment 1-4, and the difference from the embodiment 1-4 is as shown in the figure. 7 As shown, the back electrode uses a discontinuous back electrode, but a segmented back electrode. In order to connect the partial back electric field with the segmented back electrode, the linear aluminum paste is covered in the partition portion of the segmented back electrode. (3), and retaining part of the back passivation film not covered by the aluminum paste, after sintering, forming a local aluminum back field, and the partial aluminum back field is in communication with the back electrode, thereby forming a double-sided transparent portion Aluminum back field crystalline silicon solar cells. The invention has been described above with reference to only a few preferred embodiments. It should be noted that the above embodiments are only used to further illustrate the present invention, and do not represent the scope of protection of the present invention. Others make non-essential modifications and adjustments according to the prompts of the present invention, such as line types that are arranged in non-parallel. The segmented back electrode is printed on the aluminum paste, and the aluminum paste is covered in the broken portion or the spaced portion of the segmented back electrode to form a local aluminum back field, wherein the local aluminum back field is in communication with the back electrode, and the portion is retained The back passivation film is not covered by the aluminum paste. The partial aluminum back field solar cell of such a structure, and the shape of the opening are non-circular holes, etc., are still within the scope of the present invention. The double-sided transparent partial aluminum back field crystalline silicon solar cell of the invention only needs to maintain the back electric field as a local aluminum back field, that is, the part of the back passivation film is not covered by the aluminum paste, and the partial back electric field and the back are simultaneously The electrodes are connected, and the above are only some of the preferred embodiments of the invention, and are not intended to limit the invention.

Claims

权利要求 Rights request
1.一种双面透光的局部铝背场晶体硅太阳能电池， 包括硅基体， 设于硅基体正面的发射 极、 正面减反射钝化膜和正面电极， 以及设于硅基体背面的背面钝化膜、 背电场和背电极， 其特征是： 所述背电场为局部铝背场， 其通过在背面钝化膜上开孔或者开槽， 在开孔或者开 槽区域采用线型铝浆覆盖所述开孔或者开槽区域， 并保留部分背面钝化膜不被铝浆所覆盖， 烧结后在开孔或者开槽区域形成局部铝背场， 所述局部铝背场与所述背电极相连通。 1. A double-sided light-transmissive partial aluminum backfield crystalline silicon solar cell, including a silicon substrate, an emitter arranged on the front side of the silicon substrate, a front anti-reflection passivation film and a front electrode, and a back passivation electrode arranged on the back side of the silicon substrate. chemical film, back electric field and back electrode, which are characterized by: the back electric field is a local aluminum back field, which is made by opening holes or grooves on the back passivation film, and covering the hole or groove area with linear aluminum paste The opening or groove area leaves part of the back passivation film not covered by the aluminum paste. After sintering, a local aluminum back field is formed in the opening or groove area, and the local aluminum back field is connected to the back electrode. Pass.
2.根据权利要求 1所述的双面透光的局部铝背场晶体硅太阳能电池， 其特征是： 所述线 型铝浆的宽度 W2为 20~2000μηι， 相邻两线型铝浆的间距 Ρ2为 200~2000μηι。 2. The double-sided light-transmissive partial aluminum backfield crystalline silicon solar cell according to claim 1, characterized by: the width W2 of the linear aluminum paste is 20~2000 μm, and the spacing between two adjacent linear aluminum pastes Ρ2 is 200~2000μm.
3.根据权利要求 1所述双面透光的局部铝背场晶体硅太阳能电池， 其特征是： 所述开孔 或者开槽区域全部被线型铝浆覆盖。 3. The double-sided light-transmissive partial aluminum backfield crystalline silicon solar cell according to claim 1, characterized in that: the openings or grooved areas are all covered by linear aluminum paste.
4.根据权利要求 1所述双面透光的局部铝背场晶体硅太阳能电池， 其特征是： 所述开孔 为多个， 相间隔设置， 所述开孔的孔径 D为 10~200μηι， 相邻两孔的间距 Ρ0为 100~1000μηι。 4. The double-sided light-transmitting partial aluminum backfield crystalline silicon solar cell according to claim 1, characterized in that: there are a plurality of openings, arranged at intervals, and the aperture D of the openings is 10 to 200 μm, The distance P0 between two adjacent holes is 100~1000 μm.
5.根据权利要求 1所述双面透光的局部铝背场晶体硅太阳能电池， 其特征是： 所述开槽 的宽度 W1为 10~200μηι， 相邻两开槽之间的间距 P1为 200~2000μηι。 5. The double-sided light-transmitting partial aluminum backfield crystalline silicon solar cell according to claim 1, characterized in that: the width W1 of the slot is 10~200 μm, and the distance P1 between two adjacent slots is 200 ~2000μm.
6.权利要求 1所述的双面透光的局部铝背场晶体硅太阳能电池的制备方法， 其特征是： 选取晶体硅片， 制绒， 清洗， 磷扩散， 去背结， 沉积背面钝化膜， 沉积正面减反射钝化膜， 在背面钝化膜上开孔或开槽， 印刷背电极， 在开孔或开槽上覆盖线型铝浆， 其中保留部分背 面钝化膜不被铝浆所覆盖， 印刷正面电极， 烧结后制成局部铝背场， 所述局部铝背场与所述 背电极相连通， 从而形成双面透光的局部铝背场晶体硅太阳能电池。 6. The method for preparing a double-sided light-transmissive partial aluminum backfield crystalline silicon solar cell according to claim 1, characterized by: selecting crystalline silicon wafers, texturing, cleaning, phosphorus diffusion, removing back junctions, and depositing backside passivation film, deposit the front anti-reflective passivation film, make holes or grooves on the back passivation film, print the back electrode, cover the holes or grooves with linear aluminum paste, leaving part of the back passivation film free from the aluminum paste Covered, printed front electrodes, and then sintered to form a partial aluminum back field, which is connected to the back electrode, thereby forming a double-sided light-transmissive partial aluminum back field crystalline silicon solar cell.
7.根据权利要求 6所述的双面透光的局部铝背场晶体硅太阳能电池的制备方法， 其特征 是： 所述线型铝浆的宽度 W2为 20~2000μηι， 相邻两线型铝浆的间距 Ρ2为 200~2000μηι。 7. The method for preparing a double-sided light-transmitting partial aluminum backfield crystalline silicon solar cell according to claim 6, characterized in that: the width W2 of the linear aluminum paste is 20 to 2000 μm, and the width W2 of the linear aluminum paste is 20 to 2000 μm, and The spacing P2 of the pulp is 200~2000μm.
8.根据权利要求 6所述的双面透光的局部铝背场晶体硅太阳能电池的制备方法， 其特征 是:所述开孔为多个，相间隔设置，所述开孔的孔径 D为 10~200μηι，孔间距 Ρ0为 100~1000μηι。 8. The preparation method of a double-sided light-transmissive partial aluminum backfield crystalline silicon solar cell according to claim 6, characterized in that: there are a plurality of openings, arranged at intervals, and the aperture D of the openings is 10~200μm, and the hole spacing P0 is 100~1000μm.
9.根据权利要求 6所述的双面透光的局部铝背场晶体硅太阳能电池的制备方法， 其特征 是： 所述开槽的宽度 W1为 10~200μηι， 相邻两开槽之间的间距 P1为 200~2000μηι。 9. The method for preparing a double-sided light-transmissive partial aluminum backfield crystalline silicon solar cell according to claim 6, characterized in that: the width W1 of the slot is 10 to 200 μm, and the width W1 between two adjacent slots is The distance P1 is 200~2000μm.
10.根据权利要求 6所述的双面透光的局部铝背场晶体硅太阳能电池的制备方法， 其特征 是： 所述晶体硅片为 ρ型晶体硅片。 10. The method for preparing a double-sided light-transmissive partial aluminum backfield crystalline silicon solar cell according to claim 6, characterized in that: the crystalline silicon wafer is a p-type crystalline silicon wafer.
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