CN104576836B - A backgrinding method of manufacturing a solar cell passivating - Google Patents

A backgrinding method of manufacturing a solar cell passivating Download PDF

Info

Publication number
CN104576836B
CN104576836B CN 201510035929 CN201510035929A CN104576836B CN 104576836 B CN104576836 B CN 104576836B CN 201510035929 CN201510035929 CN 201510035929 CN 201510035929 A CN201510035929 A CN 201510035929A CN 104576836 B CN104576836 B CN 104576836B
Authority
CN
Grant status
Grant
Patent type
Prior art keywords
back
manufacturing method
window
slurry
pattern
Prior art date
Application number
CN 201510035929
Other languages
Chinese (zh)
Other versions
CN104576836A (en )
Inventor
蔡永梅
蒋方丹
金浩
Original Assignee
浙江晶科能源有限公司
晶科能源有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

本申请公开了一种背钝化太阳能电池的制作方法,包括:制作背电极;设置背钝化图案并退火,其中,所述背钝化图案包括第一窗口和第二窗口;在所述第二窗口内制作铝背场;其中,所述第一窗口设置于与所述背电极相对应的位置。 The present application discloses a method for manufacturing a solar cell of the back passivation, comprising: making a back electrode; a back passivation pattern and annealed, wherein the passivation pattern comprises a first back and second windows; the first II to produce an aluminum back surface field window; wherein the first window provided at a position corresponding to the back electrode. 本申请提供的制作方法中,由于制作出的背钝化图案本身就有与所述背电极和所述铝背场位置相对应的第一窗口和第二窗口,因此无需再进行开槽的操作,从而减少了制作工序,降低了生产成本。 The application provides a manufacturing method, since the created back passivation pattern itself and the back electrode and the aluminum back surface field corresponding to the position of the first and second windows, so no further operation grooved , thereby reducing the manufacturing process, reducing production costs.

Description

一种背钝化太阳能电池的制作方法 A backgrinding method of manufacturing a solar cell passivating

技术领域 FIELD

[0001]本发明涉及太阳能电池制造技术领域,特别是涉及一种背钝化太阳能电池的制作方法。 [0001] The present invention relates to a solar cell manufacturing technical field, particularly relates to method for manufacturing a solar cell of the back passivation.

背景技术 Background technique

[0002]目前传统的单晶太阳能电池光电转换效率在18.6%左右,多晶太阳能电池光电转化效率在17.8%左右,如何提高太阳能电池的光电转换效率成为光伏企业的重要研发内容。 [0002] current traditional monocrystalline solar photoelectric conversion efficiency of about 18.6%, polycrystalline solar cells photoelectric conversion efficiency of about 17.8%, how to improve the photoelectric conversion efficiency of solar cells has become an important research content photovoltaic business. 其中,背钝化技术是提高光电转换效率的重要手段,这种背钝化技术改变了背面电池的结构,其优势在于降低了有效载流子在电池背表面的复合概率,从而提升开路电压,而且,背面抛光和减反射膜可以增加内反射,提升短路电流,从而获得太阳能电池电性能参数的提尚。 Wherein the back passivation technology is an important means of improving the photoelectric conversion efficiency, which changes the structure of the back passivation technique of the back of the battery, which the advantage of reducing the effective probability of recombination of carriers back surface of the cell, so as to enhance open circuit voltage, Further, the back surface may be polished and antireflection film to increase internal reflection, to enhance short-circuit current, to thereby obtain a solar battery still provide performance parameters. 背纯化技术可以有效提升单晶太阳能电池效率0.8%至I %,提升多晶太阳能电池效率0.5%至0.8%。 Back purification techniques can effectively enhance the efficiency of the solar cell monocrystalline 0.8% to I%, to enhance the efficiency of polycrystalline solar cells from 0.5 to 0.8%. 现有技术中的一种制备背钝化太阳能电池的方法为:在太阳能电池背面沉积一层I Onm左右的Al 203钝化膜,再沉积一层80nm左右的SiNx保护膜。 A backgrinding method of preparing a solar cell passivation prior art is: Al 203 about the passivation film layer deposited on the I Onm solar cell back then deposited a layer of about 80nm SiNx protective film.

[0003]然而,由于上述两层背面介质膜均为绝缘膜,因此需要用激光或腐蚀性浆料对介质膜进行开槽处理,因此现有的这种制作方法工序繁多,造成生产成本较高。 [0003] However, since the back surface of the insulating film are two-layer dielectric film, hence the need for a corrosive slurry laser or grooving process on a dielectric film, so that the conventional manufacturing method many processes, resulting in higher production costs .

发明内容 SUMMARY

[0004]为解决上述问题,本发明提供了一种背钝化太阳能电池的制作方法,能够减少制作工序,降低生产成本。 [0004] In order to solve the above problems, the present invention provides a method for manufacturing a solar cell of the back passivation, manufacturing processes can be reduced, to reduce production costs.

[0005]本发明提供的一种背钝化太阳能电池的制作方法包括: [0005] The back passivation method for manufacturing a solar cell of the present invention comprises:

[0006]制作背电极; [0006] Production of the back electrode;

[0007]设置背钝化图案并退火,其中,所述背钝化图案包括第一窗口和第二窗口 ; [0007] a back passivation pattern and annealing, wherein the passivation pattern comprises a first back and second windows;

[0008]在所述第二窗口内制作铝背场; [0008] The production of aluminum back surface field in the second window;

[0009]其中,所述第一窗口设置于与所述背电极相对应的位置。 [0009] wherein the first window provided at a position corresponding to the back electrode.

[0010]优选的,在上述制作方法中,利用氧化铝浆料设置所述背钝化图案。 [0010] Preferably, in the above-described manufacturing method, the alumina slurry is provided using the back passivation pattern.

[0011 ]优选的,在上述制作方法中,利用丝网印刷的方法设置所述背钝化图案。 [0011] Preferably, in the above-described fabrication method, a screen printing method using the back passivation pattern disposed.

[0012]优选的,在上述制作方法中,所述背钝化浆料的印刷湿重为0.09克/片至0.25克/片。 [0012] Preferably, in the above-described manufacturing method, the back passivation printing wet slurry weight of 0.09 g / sheet to 0.25 g / sheet.

[0013]优选的,在上述制作方法中,所述第二窗口的形状为点状或线状。 [0013] Preferably, in the above-described manufacturing method, the shape of the second window is a point-like or linear.

[0014]优选的,在上述制作方法中,在所述第二窗口内印刷背铝浆料,制作所述铝背场。 [0014] Preferably, in the above-described fabrication method, the second window in the back printing an aluminum paste, the aluminum back surface field production.

[0015]优选的,在上述制作方法中,在对所述背钝化图案进行退火之前还包括烘干过程。 [0015] Preferably, in the above-described fabrication method, prior to annealing the back passivation pattern comprises a further drying process.

[0016]优选的,在上述制作方法中,所述烘干过程的温度为150°C至200°C,包括端点值,所述烘干的时间为3分钟至5分钟,包括端点值。 [0016] Preferably, in the above-described manufacturing method, the temperature of the drying process is 150 ° C to 200 ° C, inclusive, the drying time is 3-5 minutes, inclusive.

[0017]优选的,在上述制作方法中,所述退火过程在氮气气氛中进行。 [0017] Preferably, the annealing process is performed in a nitrogen atmosphere in the above-described fabrication method.

[0018]优选的,在上述制作方法中,退火温度为5000C至700 0C,包括端点值,退火时间为20分钟至40分钟,包括端点值。 [0018] Preferably, in the above-described manufacturing method, the annealing temperature is 5000C to 700 0C, inclusive, an annealing time of 20 minutes to 40 minutes inclusive.

[0019]通过上述描述可知,本发明提供的一种背钝化太阳能电池的制作方法中,先制作背电极;再设置背钝化图案并退火,其中,所述背钝化图案包括第一窗口和第二窗口;然后在所述第二窗口内制作铝背场;其中,所述第一窗口设置于与所述背电极相对应的位置。 [0019] apparent from the above description, the back passivation method for manufacturing a solar cell of the present invention, provided, first make a back electrode; a back passivation pattern and then annealed, wherein the passivation pattern comprises a first rear window and a second window; aluminum BSF then formed within the second window; wherein the first window provided at a position corresponding to the back electrode. 由于制作出的背钝化图案本身就有与所述背电极和所述铝背场位置相对应的第一窗口和第二窗口,因此无需再进行开槽的操作,从而减少了制作工序,降低了生产成本。 Due to the created back passivation pattern itself and the back electrode and the aluminum back surface field corresponding to the position of the first and second windows, so no longer be notched, thereby reducing the manufacturing process, reducing the cost of production.

附图说明 BRIEF DESCRIPTION

[0020]为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。 [0020] In order to more clearly illustrate the technical solutions in the embodiments or the prior art embodiment of the present invention, briefly introduced hereinafter, embodiments are described below in the accompanying drawings or described in the prior art needed to be used in describing the embodiments the drawings are only examples of the present invention, those of ordinary skill in the art is concerned, without creative efforts, can derive other drawings from the accompanying drawings provided.

[0021]图1为本申请实施例提供的一种背钝化太阳能电池的制作方法的示意图; [0021] FIG. 1 is a schematic diagram of a back passivation application method of manufacturing a solar cell according to an embodiment;

[0022]图2为本申请实施例所利用的一种丝网图案的示意图。 [0022] FIG. 2 is a schematic embodiment of a screen utilized in a pattern embodiment of the present application.

具体实施方式 detailed description

[0023]下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。 [0023] below in conjunction with the present invention in the accompanying drawings, technical solutions of embodiments of the present invention are clearly and completely described, obviously, the described embodiments are merely part of embodiments of the present invention, but not all embodiments example. 基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。 Based on the embodiments of the present invention, all other embodiments of ordinary skill in the art without any creative effort shall fall within the scope of the present invention.

[0024]本申请实施例提供的一种背钝化太阳能电池的制作方法如图1所示,图1为本申请实施例提供的一种背钝化太阳能电池的制作方法的示意图。 The back passivation method for manufacturing a solar cell provided by the [0024] application of the present embodiment shown in FIG. 1, FIG. 1 is a schematic diagram of a back passivation method for manufacturing a solar cell according to an embodiment of the application. 该方法包括如下步骤: The method comprises the steps of:

[0025] S1:制作背电极; [0025] S1: making a back electrode;

[0026]在该步骤中,采用丝网印刷的方式制作所述背电极。 [0026] In this step, a screen printing method making use of the back electrode.

[0027] S2:设置背钝化图案并退火,其中,所述背钝化图案包括第一窗口和第二窗口; [0027] S2: a back passivation pattern and annealing, wherein the passivation pattern comprises a first back and second windows;

[0028]在该步骤中,不再采用沉积的方式制作一层钝化膜,而是直接制作出背钝化图案,该图案包括与所述背电极的位置相对应的第一窗口和与铝背场的位置相对应的第二窗口,这样就省去了开槽的步骤,节省了生产成本。 [0028] In this step, no way made by the deposition of a passivation film, but produced directly back passivation pattern, the pattern includes a position corresponding to the back electrode of the first window and aluminum a second back position of the window corresponding to the field, thus eliminating the step of grooving, production cost is saved.

[0029] S3:在所述第二窗口内制作铝背场。 [0029] S3: production of aluminum back surface field in the second window.

[0030]在该步骤中,由于步骤S2中直接开出了所述第二窗口,因此在背钝化过程以后,可以直接制作铝背场,大大提高了工作效率。 [0030] In this step, since the step S2 directly out of the second window, so after the back passivation process, the aluminum back surface field can be produced directly, greatly improving work efficiency.

[0031]通过上述描述可知,本申请实施例提供的一种背钝化太阳能电池的制作方法中,由于制作出的背钝化图案本身就有与所述背电极和所述铝背场位置相对应的第一窗口和第二窗口,因此无需再进行开槽的操作,从而减少了制作工序,节省了生产成本。 [0031] apparent from the above description, the back passivation method for manufacturing a solar cell provided according to the present embodiment of the application, because the created back passivation pattern with itself and the back of the aluminum back electrode and the field position corresponding first and second windows, so no longer be grooved to reduce the production process, production cost is saved.

[0032]在上述制作方法中,可以优选的利用氧化铝浆料设置所述背钝化图案。 [0032] In the above manufacturing method, the alumina slurry may preferably be provided by the back passivation pattern. 氧化铝具有优异的背钝化性能,能够较大幅度的降低载流子在背面被复合的概率,从而有效提高太阳能电池的光电转换效率。 Back passivation alumina having excellent properties, can be reduced significantly the probability of carriers are recombined in the back side, thereby effectively improving the photoelectric conversion efficiency of the solar cell.

[0033]在上述制作方法中,可以优选的利用丝网印刷的方法设置所述背钝化图案。 [0033] In the above manufacturing method may be a preferred method is provided by screen printing the back passivation pattern. 这种方法所利用的丝网图案如图2所示,图2为本申请实施例所利用的一种丝网图案的示意图。 This method utilized a screen pattern shown in FIG. 2, FIG. 2 is a schematic diagram utilized in an embodiment of a screen pattern application. 该丝网图案包括透浆部分1、第一不透浆部分2和第二不透浆部分3,其中所述透浆部分I能够透过背钝化浆料,用于制作背钝化图案,所述第一不透浆部分2的位置与背电极的位置相对应,用于开出所述第一窗口,所述第二不透浆部分3的位置与铝背场的位置相对应,用于开出所述第二窗口。 The pulp screening pattern comprises a permeable portion 1, a first impermeable portion 2 and a second pulp slurry impermeable portion 3, wherein the permeable portion of the pulp slurry through the back passivation I can be used to make back passivation pattern, the position of the first slurry impermeable portion 2 and the back electrode corresponding to a position for opening the first window, the second position slurry impermeable portion 3 with the aluminum back surface field corresponding to the position, with out in the second window. 利用如上所述的丝网图案就能制作出开有所述第一窗口和所述第二窗口的背钝化图案。 Screening pattern using the above process to create the first window is opened and the second window of the back passivation pattern.

[0034]在上述制作方法中,所述背钝化浆料的印刷湿重可以优选为0.09克/片至0.25克/片,这样就既能保证制作出的背钝化图案具有优异的效果,又能最大限度的节省生产成本。 [0034] In the above manufacturing method, the back passivation printing wet weight of paste may preferably 0.09 g / sheet to 0.25 g / sheet, thus produced can ensure a back passivation pattern has an excellent effect, but also to maximize savings in production costs.

[0035]在上述制作方法中,所述第二窗口的形状可以优选为点状或线状,这样能够使得形成的铝背场能够与硅形成合金,导出电流。 [0035] In the above manufacturing method, the shape of the second window may preferably be point-like or linear, so that the aluminum back surface field can be formed capable of forming an alloy with silicon, deriving current.

[0036]在上述制作方法中,可以优选的在所述第二窗口内印刷背铝浆料,制作所述铝背场,这种铝背场能够减少少数载流子在背面的复合的概率,也能反射部分长波光子,增加短路电流。 [0036] In the above manufacturing method can be preferably printed in the second window back aluminum paste, the aluminum back surface field production, such an aluminum back surface field can reduce the probability of minority carriers in the rear surface of the composite, long wavelength photons reflecting portion can also increase the short-circuit current.

[0037]在上述制作方法中,在对所述背钝化图案进行退火之前还优选的包括烘干过程,这样就能使背钝化图案更为稳定和均匀,具有更好的反射效果。 [0037] In the above fabrication method, prior to annealing the back passivation pattern further preferably comprises a drying process, so that the back passivation pattern can be more stable and uniform, have a better reflection effect. 而且,所述烘干过程的温度可以优选为150 °C至200 °C,包括端点值,所述烘干的时间可以优选为3分钟至5分钟,包括端点值。 Further, the temperature of the drying process may be preferably 150 ° C to 200 ° C, inclusive, the drying time may be preferably from 3 to 5 minutes, inclusive. 通过对烘干参数的调节,可以获得更好的烘干效果。 By adjusting the parameters of drying, better drying effect can be obtained.

[0038]在上述制作方法中,所述退火过程可以优选的在氮气气氛中进行,氮气为一种惰性气体,能保证退火过程中背钝化浆料不发生氧化。 [0038] The annealing process may preferably be carried out in a nitrogen atmosphere in the above-described manufacturing method, the nitrogen as an inert gas, the annealing process to ensure the back passivation oxide slurry does not occur.

[0039]在上述制作方法中,退火温度可以优选为500°C至700°C,包括端点值,退火时间可以优选为20分钟至40分钟,包括端点值。 [0039] In the above fabrication method, the annealing temperature may be preferably 500 ° C to 700 ° C, inclusive, the annealing time may be preferably from 20 to 40 minutes, inclusive. 通过对退火参数的调节,能够更好的实现背钝化浆料中应力的消除。 By adjustment of the annealing parameters, it is possible to achieve better back passivation slurry stress relief.

[0040]通过上述描述可知,本申请实施例提供的一种背钝化太阳能电池的制作方法减少了制作工序,节省了生产成本。 [0040] apparent from the above description, the back passivation present application implementing a method of manufacturing a solar cell provided in the production process is reduced, production cost is saved.

[0041]对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。 [0041] The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. 对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。 Various modifications to these professionals skilled in the art of the present embodiments will be apparent, and the generic principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. 因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。 Accordingly, the present invention will not be limited to the embodiments shown herein but is to be accorded herein consistent with the principles and novel features disclosed widest scope.

Claims (9)

  1. 1.一种背钝化太阳能电池的制作方法,其特征在于,包括: 制作背电极; 利用丝网印刷的方法直接制作出背钝化图案并退火,所述图案包括与所述背电极的位置相对应的第一窗口和与铝背场的位置相对应的第二窗口,其中,所述丝网印刷的方法利用的丝网图案包括透浆部分、第一不透浆部分和第二不透浆部分,其中所述透浆部分能够透过背钝化浆料,用于制作背钝化图案,所述第一不透浆部分的位置与所述背电极的位置相对应,用于开出所述第一窗口,所述第二不透浆部分的位置与所述铝背场的位置相对应,用于开出所述第二窗口;在所述第二窗口内制作铝背场。 CLAIMS 1. A method of manufacturing a back passivation of a solar cell, characterized by comprising: making a back electrode; directly using a screen printing method to produce a pattern, and the back passivation anneal, said pattern including a position of the back electrode corresponding to the first and second windows to the position corresponding to the aluminum back surface field, wherein the screen printing method using a paste through a screen pattern portion comprising a first portion and a second slurry impervious impervious pulp part, wherein the permeable portion can be passivated slurry back through slurry for making back passivation pattern, the position of the first slurry impermeable portion and a position corresponding to the back electrode, for opening the the first window, the second slurry impermeable portion of the aluminum back surface field with a position corresponding to the position for opening the said second window; to produce an aluminum BSF within the second window.
  2. 2.根据权利要求1所述的制作方法,其特征在于,利用氧化铝浆料设置所述背钝化图案。 2. The manufacturing method according to claim 1, wherein the alumina slurry is provided using the back passivation pattern.
  3. 3.根据权利要求1所述的制作方法,其特征在于,所述背钝化浆料的印刷湿重为0.09克/片至0.25克/片。 3. The manufacturing method according to claim 1, characterized in that the printing of the back passivation wet weight slurry of 0.09 g / sheet to 0.25 g / sheet.
  4. 4.根据权利要求1-3任一项所述的制作方法,其特征在于,所述第二窗口的形状为点状或线状。 4. A manufacturing method according to any one of claims 1-3, characterized in that the shape of the second window is a point-like or linear.
  5. 5.根据权利要求4所述的制作方法,其特征在于,在所述第二窗口内印刷背铝浆料,制作所述铝背场。 The manufacturing method as claimed in claim 4, wherein the second window in the back printing an aluminum paste, the aluminum back surface field production.
  6. 6.根据权利要求1所述的制作方法,其特征在于,在对所述背钝化图案进行退火之前还包括烘干过程。 6. The manufacturing method according to claim 1, characterized in that, prior to annealing the back passivation pattern further comprising a drying process.
  7. 7.根据权利要求6所述的制作方法,其特征在于,所述烘干过程的温度为150°C至2000C,包括端点值,所述烘干的时间为3分钟至5分钟,包括端点值。 7. The manufacturing method according to claim 6, characterized in that the temperature of the drying process is 150 ° C to 2000C, inclusive, the drying time is 3-5 minutes, inclusive .
  8. 8.根据权利要求1所述的制作方法,其特征在于,所述退火过程在氮气气氛中进行。 8. The manufacturing method according to claim 1, wherein said annealing process is performed in a nitrogen atmosphere.
  9. 9.根据权利要求8所述的制作方法,其特征在于,退火温度为500°C至700°C,包括端点值,退火时间为20分钟至40分钟,包括端点值。 9. The manufacturing method according to claim 8, characterized in that the annealing temperature is 500 ° C to 700 ° C, inclusive, the annealing time of 20 minutes to 40 minutes inclusive.
CN 201510035929 2015-01-23 2015-01-23 A backgrinding method of manufacturing a solar cell passivating CN104576836B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201510035929 CN104576836B (en) 2015-01-23 2015-01-23 A backgrinding method of manufacturing a solar cell passivating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201510035929 CN104576836B (en) 2015-01-23 2015-01-23 A backgrinding method of manufacturing a solar cell passivating

Publications (2)

Publication Number Publication Date
CN104576836A true CN104576836A (en) 2015-04-29
CN104576836B true CN104576836B (en) 2017-02-22

Family

ID=53092463

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201510035929 CN104576836B (en) 2015-01-23 2015-01-23 A backgrinding method of manufacturing a solar cell passivating

Country Status (1)

Country Link
CN (1) CN104576836B (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5320684A (en) * 1992-05-27 1994-06-14 Mobil Solar Energy Corporation Solar cell and method of making same
CN1441504A (en) * 2003-04-03 2003-09-10 上海交通大学 Prepn process of efficient cheap large-area silicon crystal solar cell
CN103050551A (en) * 2012-03-30 2013-04-17 长兴化学工业股份有限公司 Solar energy cell passivation layer and manufacture method thereof
CN103280468A (en) * 2013-06-04 2013-09-04 中山大学 Back electrode structure of crystalline silicon solar cell with passivated back and screen printing plate used by crystalline silicon solar cell
CN103367540A (en) * 2013-06-26 2013-10-23 英利集团有限公司 Back passivation solar cell and manufacturing method thereof
CN103456837A (en) * 2013-08-26 2013-12-18 镇江大全太阳能有限公司 Method for manufacturing solar cell with local back surface field passivation
CN103489934A (en) * 2013-09-25 2014-01-01 晶澳(扬州)太阳能科技有限公司 Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof
CN203491270U (en) * 2013-08-31 2014-03-19 山东力诺太阳能电力股份有限公司 Back electrode structure of crystalline silicon solar cell

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5320684A (en) * 1992-05-27 1994-06-14 Mobil Solar Energy Corporation Solar cell and method of making same
CN1441504A (en) * 2003-04-03 2003-09-10 上海交通大学 Prepn process of efficient cheap large-area silicon crystal solar cell
CN103050551A (en) * 2012-03-30 2013-04-17 长兴化学工业股份有限公司 Solar energy cell passivation layer and manufacture method thereof
CN103280468A (en) * 2013-06-04 2013-09-04 中山大学 Back electrode structure of crystalline silicon solar cell with passivated back and screen printing plate used by crystalline silicon solar cell
CN103367540A (en) * 2013-06-26 2013-10-23 英利集团有限公司 Back passivation solar cell and manufacturing method thereof
CN103456837A (en) * 2013-08-26 2013-12-18 镇江大全太阳能有限公司 Method for manufacturing solar cell with local back surface field passivation
CN203491270U (en) * 2013-08-31 2014-03-19 山东力诺太阳能电力股份有限公司 Back electrode structure of crystalline silicon solar cell
CN103489934A (en) * 2013-09-25 2014-01-01 晶澳(扬州)太阳能科技有限公司 Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof

Also Published As

Publication number Publication date Type
CN104576836A (en) 2015-04-29 application

Similar Documents

Publication Publication Date Title
EP0999598A1 (en) Solar cell and method for fabricating a solar cell
CN101853897A (en) Method for preparing N-type crystalline silicon solar cell with aluminum-based local emitters on back side
CN101764179A (en) Manufacture method of selective front surface field N-type solar cell
CN201699033U (en) Two-sided illuminated crystalline silicon solar battery
CN101692466A (en) Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique
CN102208486A (en) Preparation method of MWT (Metal Wrap Through) solar cell
CN101101936A (en) Making method for selective transmission node crystal silicon solar battery
CN101447528A (en) Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting
CN102290473A (en) For a rear point contact silicon solar cell and a method for preparing crystalline
JPH06310740A (en) Solar cell and fabrication thereof
US20100154883A1 (en) Method of manufacturing crystalline silicon solar cells with improved surface passivation
US20080076203A1 (en) Method for metallization of photovoltaic cells with multiple annealing operations
CN101164173A (en) Solar cell manufacturing method and solar cell
CN104538501A (en) N-type double-sided battery and manufacturing method thereof
CN101826573A (en) Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery
CN102082198A (en) High-power low-voltage silicon-based thin film solar cell and manufacturing method thereof
JP2002222973A (en) Photoelectric converter and its manufacturing method
KR100677374B1 (en) Manufacturing method of porous solar cells using thin silicon wafer
JP2008512858A (en) Manufacturing process and manufacturing method of the emitter wrap-through back-contact solar cells
JP2011129867A (en) Silicon solar cell containing boron diffusion layer and method of manufacturing the same
JP2002277605A (en) Method for depositing antireflection film
CN101587919A (en) Method for manufacturing selective emitter junction of multricrytalline silicon solar cell
JP2010171263A (en) Method of manufacturing photovoltaic device
CN102738301A (en) Method for forming crystalline silicon solar cell front electrode
CN101315953A (en) Back electrode suitable for thin solar cell and production method thereof

Legal Events

Date Code Title Description
C06 Publication
C10 Entry into substantive examination
C14 Grant of patent or utility model