CN104576836B - Method for manufacturing back-passivated solar cells - Google Patents
Method for manufacturing back-passivated solar cells Download PDFInfo
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- CN104576836B CN104576836B CN201510035929.2A CN201510035929A CN104576836B CN 104576836 B CN104576836 B CN 104576836B CN 201510035929 A CN201510035929 A CN 201510035929A CN 104576836 B CN104576836 B CN 104576836B
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- Prior art keywords
- window
- manufacture method
- slurry
- body passivation
- aluminum
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 238000002161 passivation Methods 0.000 claims description 33
- 239000002002 slurry Substances 0.000 claims description 24
- 238000001035 drying Methods 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009955 starching Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for manufacturing back-passivated solar cells. The method comprises the steps that a back electrode is manufactured, a back-passivated pattern is set, and annealing is conducted, wherein the back-passivated pattern comprises a first window and a second window; an aluminum back surface field is manufactured in the second window, wherein the first window is arranged at the position corresponding to the position of the back electrode. By means of the method, due to the facts that the manufactured back-passivated pattern is provided with the first window and the second window, and the first window and the second window correspond to the back electrode and the aluminum back surface field in position, slotting operation is omitted, the number of manufacturing processes is reduced, and production cost is lowered.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, more particularly to a kind of making of back of the body passivation solaode
Method.
Background technology
18.6% about, polycrystalline solar cell photoelectricity turns monocrystalline solar cells photoelectric transformation efficiency traditional at present
Change efficiency 17.8% about, the photoelectric transformation efficiency how improving solaode becomes in the important research and development of photovoltaic enterprise
Hold.Wherein, back of the body passivating technique is the important means improving photoelectric transformation efficiency, and this back of the body passivating technique changes back side battery
Structure, it is advantageous that the probability of recombination reducing efficient carrier in battery back surface, thus lifting open-circuit voltage, and,
Polished backside and antireflective coating can increase internal reflection, lift short circuit current, thus obtaining solaode unit for electrical property parameters
Improve.Back of the body passivating technique can effectively lift monocrystalline solar cells efficiency 0.8% to 1%, lifting polycrystalline solar cell effect
Rate 0.5% to 0.8%.Of the prior art a kind of prepare the back of the body passivation solaode method be：In rear surface of solar cell
One layer of 10nm of deposition about Al2O3 passivating film, redeposited one layer of 80nm about SiNx protecting film.
However, because above-mentioned two-layer back side deielectric-coating is dielectric film it is therefore desirable to laser or corrosivity slurry to Jie
Plasma membrane carries out slot treatment, and therefore existing this manufacture method operation is various, causes production cost higher.
Content of the invention
For solving the above problems, the invention provides a kind of manufacture method of back of the body passivation solaode, system can be reduced
Make operation, reduce production cost.
The manufacture method that a kind of back of the body that the present invention provides is passivated solaode includes：
Make back electrode；
Setting back of the body passivation pattern is simultaneously annealed, and wherein, described back of the body passivation pattern includes first window and the second window；
Aluminum back surface field is made in described second window；
Wherein, described first window is arranged at the position corresponding with described back electrode.
Preferably, in above-mentioned manufacture method, described back of the body passivation pattern is set using alumina slurry.
Preferably, in above-mentioned manufacture method, the method using silk screen printing arranges described back of the body passivation pattern.
Preferably, in above-mentioned manufacture method, described the back of the body passivation slurry printing weight in wet base be 0.09 gram/piece to 0.25 gram/
Piece.
Preferably, in above-mentioned manufacture method, described second window be shaped as point-like or wire.
Preferably, in above-mentioned manufacture method, in described second window, print back aluminum slurry, make described aluminum back surface field.
Preferably, in above-mentioned manufacture method, before described back of the body passivation pattern is annealed, also include drying course.
Preferably, in above-mentioned manufacture method, the temperature of described drying course be 150 DEG C to 200 DEG C, including endpoint value,
The time of described drying be 3 minutes to 5 minutes, including endpoint value.
Preferably, in above-mentioned manufacture method, described annealing process is carried out in nitrogen atmosphere.
Preferably, in above-mentioned manufacture method, annealing temperature is 500 DEG C to 700 DEG C, and including endpoint value, annealing time is
20 minutes to 40 minutes, including endpoint value.
By foregoing description, a kind of back of the body that the present invention provides is passivated in the manufacture method of solaode, first makes
Back electrode；Back of the body passivation pattern is set again and anneals, wherein, described back of the body passivation pattern includes first window and the second window；Then
Aluminum back surface field is made in described second window；Wherein, described first window is arranged at the position corresponding with described back electrode.By
Inherently there are the first window corresponding with described back electrode and described aluminum back surface field position and in the back of the body passivation pattern produced
Two windows, the operation that therefore need not be slotted again, thus decreasing manufacturing process, reduce production cost.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing providing obtains other accompanying drawings.
Fig. 1 is passivated the schematic diagram of the manufacture method of solaode for a kind of back of the body that the embodiment of the present application provides；
A kind of schematic diagram of silk-screen patterns that Fig. 2 is utilized by the embodiment of the present application.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
A kind of back of the body that the embodiment of the present application provides is passivated the manufacture method of solaode as shown in figure 1, Fig. 1 is the application
A kind of back of the body that embodiment provides is passivated the schematic diagram of the manufacture method of solaode.The method comprises the steps：
S1：Make back electrode；
In this step, make described back electrode by the way of silk screen printing.
S2：Setting back of the body passivation pattern is simultaneously annealed, and wherein, described back of the body passivation pattern includes first window and the second window；
In this step, no longer by the way of deposition, make one layer of passivating film, but directly produce back of the body passivation pattern,
This pattern includes the first window corresponding with the position of described back electrode and second window corresponding with the position of aluminum back surface field,
The step eliminating fluting, saves production cost.
S3：Aluminum back surface field is made in described second window.
In this step, due to directly having outputed described second window in step S2, therefore after back of the body passivating process, can
Directly to make aluminum back surface field, substantially increase work efficiency.
By foregoing description, a kind of back of the body that the embodiment of the present application provides is passivated in the manufacture method of solaode,
Back of the body passivation pattern due to producing inherently have the first window corresponding with described back electrode and described aluminum back surface field position and
Second window, the operation that therefore need not be slotted again, thus decreasing manufacturing process, save production cost.
In above-mentioned manufacture method it may be preferred to utilization alumina slurry arrange described back of the body passivation pattern.Aluminium oxide has
There is excellent back of the body inactivating performance, carrier being reduced overleaf by compound probability by a relatively large margin, thus effectively improving too
The photoelectric transformation efficiency of sun energy battery.
In above-mentioned manufacture method it may be preferred to utilization silk screen printing method arrange described back of the body passivation pattern.This
Silk-screen patterns that method is utilized are as shown in Fig. 2 a kind of schematic diagram of silk-screen patterns that utilized by the embodiment of the present application of Fig. 2.
This silk-screen patterns includes starching the impermeable slurry part 2 of part 1, first and the second impermeable slurry part 3, wherein said slurry part 1 energy
Enough back ofs the body that passes through are passivated slurry, for making back of the body passivation pattern, the position phase of the described first impermeable position starching part 2 and back electrode
Corresponding, it is used for outputing described first window, the position of described second impermeable slurry part 3 is corresponding with the position of aluminum back surface field, is used for
Output described second window.Just can be produced using silk-screen patterns as above and have described first window and described second window
The back of the body passivation pattern of mouth.
In above-mentioned manufacture method, described the back of the body passivation slurry printing weight in wet base can be preferably 0.09 gram/piece to 0.25 gram/
Piece, thus both can guarantee that the back of the body passivation pattern produced had excellent effect, can save production cost to greatest extent again.
In above-mentioned manufacture method, the shape of described second window can be preferably point-like or wire, so enables to
The aluminum back surface field being formed can form alloy, derived current with silicon.
In above-mentioned manufacture method it may be preferred to print back aluminum slurry in described second window, make the described aluminum back of the body
, this aluminum back surface field can reduce minority carrier compound probability overleaf, also can reflecting part longer-wave photons, increase short
Road electric current.
In above-mentioned manufacture method, inclusion drying course further preferably before described back of the body passivation pattern is annealed,
Back of the body passivation pattern thus can be made more stable and uniform, there is more preferable reflecting effect.And, the temperature of described drying course
150 DEG C to 200 DEG C can be preferably, including endpoint value, the time of described drying can be preferably 3 minutes to 5 minutes, including end
Point value.By the regulation to drying parameter, it is possible to obtain preferably drying effect.
In above-mentioned manufacture method, described annealing process can preferably be carried out in nitrogen atmosphere, and nitrogen is a kind of lazy
Property gas, can guarantee that in annealing process that back of the body passivation slurry does not aoxidize.
In above-mentioned manufacture method, annealing temperature can be preferably 500 DEG C to 700 DEG C, and including endpoint value, annealing time can
To be preferably 20 minutes to 40 minutes, including endpoint value.By the regulation to annealing parameter, can preferably realize back of the body passivation slurry
The elimination of stress in material.
By foregoing description, a kind of back of the body that the embodiment of the present application provides is passivated the manufacture method minimizing of solaode
Manufacturing process, saves production cost.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple modifications to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can be realized without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and be to fit to and principles disclosed herein and features of novelty phase one
The scope the widest causing.
Claims (9)
1. a kind of manufacture method of back of the body passivation solaode is it is characterised in that include：
Make back electrode；
Method using silk screen printing is directly produced back of the body passivation pattern and is annealed, and described pattern includes the position with described back electrode
Put corresponding first window and second window corresponding with the position of aluminum back surface field, wherein, the method profit of described silk screen printing
Silk-screen patterns include slurry part, the first impermeable slurry part and the second impermeable slurry part, and wherein said slurry part can
Through back of the body passivation slurry, for making back of the body passivation pattern, the position of described first impermeable slurry part and the position of described back electrode
Corresponding, it is used for outputing described first window, the position of described second impermeable slurry part is corresponding with the position of described aluminum back surface field,
For outputing described second window；Aluminum back surface field is made in described second window.
2. manufacture method according to claim 1 is it is characterised in that schemed using alumina slurry setting described back of the body passivation
Case.
3. manufacture method according to claim 1 is it is characterised in that the printing weight in wet base that the described back of the body is passivated slurry is 0.09
Gram/piece to 0.25 gram/piece.
4. the manufacture method according to any one of claim 1-3 it is characterised in that described second window be shaped as point-like
Or wire.
5. manufacture method according to claim 4 is it is characterised in that print back aluminum slurry, system in described second window
Make described aluminum back surface field.
6. manufacture method according to claim 1 is it is characterised in that went back before described back of the body passivation pattern is annealed
Including drying course.
7. manufacture method according to claim 6 is it is characterised in that the temperature of described drying course is 150 DEG C to 200
DEG C, including endpoint value, time of described drying be 3 minutes to 5 minutes, including endpoint value.
8. manufacture method according to claim 1 is it is characterised in that described annealing process is carried out in nitrogen atmosphere.
9. manufacture method according to claim 8 it is characterised in that annealing temperature be 500 DEG C to 700 DEG C, including end points
Value, annealing time be 20 minutes to 40 minutes, including endpoint value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510035929.2A CN104576836B (en) | 2015-01-23 | 2015-01-23 | Method for manufacturing back-passivated solar cells |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510035929.2A CN104576836B (en) | 2015-01-23 | 2015-01-23 | Method for manufacturing back-passivated solar cells |
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| Publication Number | Publication Date |
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| CN104576836A CN104576836A (en) | 2015-04-29 |
| CN104576836B true CN104576836B (en) | 2017-02-22 |
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| CN109659395A (en) * | 2018-12-19 | 2019-04-19 | 中山大学 | A kind of passivating back method of PERC solar cell |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5320684A (en) * | 1992-05-27 | 1994-06-14 | Mobil Solar Energy Corporation | Solar cell and method of making same |
| CN1441504A (en) * | 2003-04-03 | 2003-09-10 | 上海交通大学 | Prepn process of efficient cheap large-area silicon crystal solar cell |
| CN103050551A (en) * | 2012-03-30 | 2013-04-17 | 长兴化学工业股份有限公司 | Passivation layer of solar cell and manufacturing method thereof |
| CN103280468A (en) * | 2013-06-04 | 2013-09-04 | 中山大学 | Back electrode structure of crystalline silicon solar cell with passivated back and screen printing plate used by crystalline silicon solar cell |
| CN103367540A (en) * | 2013-06-26 | 2013-10-23 | 英利集团有限公司 | Back passivation solar cell and manufacturing method thereof |
| CN103456837A (en) * | 2013-08-26 | 2013-12-18 | 镇江大全太阳能有限公司 | Method for manufacturing solar cell with local back surface field passivation |
| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
| CN203491270U (en) * | 2013-08-31 | 2014-03-19 | 山东力诺太阳能电力股份有限公司 | Back electrode structure of crystalline silicon solar cell |
-
2015
- 2015-01-23 CN CN201510035929.2A patent/CN104576836B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5320684A (en) * | 1992-05-27 | 1994-06-14 | Mobil Solar Energy Corporation | Solar cell and method of making same |
| CN1441504A (en) * | 2003-04-03 | 2003-09-10 | 上海交通大学 | Prepn process of efficient cheap large-area silicon crystal solar cell |
| CN103050551A (en) * | 2012-03-30 | 2013-04-17 | 长兴化学工业股份有限公司 | Passivation layer of solar cell and manufacturing method thereof |
| CN103280468A (en) * | 2013-06-04 | 2013-09-04 | 中山大学 | Back electrode structure of crystalline silicon solar cell with passivated back and screen printing plate used by crystalline silicon solar cell |
| CN103367540A (en) * | 2013-06-26 | 2013-10-23 | 英利集团有限公司 | Back passivation solar cell and manufacturing method thereof |
| CN103456837A (en) * | 2013-08-26 | 2013-12-18 | 镇江大全太阳能有限公司 | Method for manufacturing solar cell with local back surface field passivation |
| CN203491270U (en) * | 2013-08-31 | 2014-03-19 | 山东力诺太阳能电力股份有限公司 | Back electrode structure of crystalline silicon solar cell |
| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
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