CN106856214A - A kind of preparation method of solar battery - Google Patents
A kind of preparation method of solar battery Download PDFInfo
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- CN106856214A CN106856214A CN201611262870.1A CN201611262870A CN106856214A CN 106856214 A CN106856214 A CN 106856214A CN 201611262870 A CN201611262870 A CN 201611262870A CN 106856214 A CN106856214 A CN 106856214A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 42
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 230000005684 electric field Effects 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 210000004027 cell Anatomy 0.000 abstract description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 13
- 239000001257 hydrogen Substances 0.000 abstract description 13
- 238000002161 passivation Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 7
- 210000005056 cell body Anatomy 0.000 abstract description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 44
- 239000013078 crystal Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 5
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
This application discloses a kind of preparation method of solar battery, including：Step S1：Silicon chip is carried out cleaning and texturing, PN junction diffusion and etching removal phosphorosilicate glass successively；Step S2：In PN junction diffusion layer surface deposition SiNx films, obtain being coated with the silicon chip of layer of sin x films, temperature is increased to preset temperature in reaction chamber, while standing Preset Time, SiNx films is deposited again, obtains being coated with the silicon chip of two-layer SiNx films；Step S3：Positive and negative to being coated with the silicon chip of two-layer SiNx films carries out silk-screen printing, forms positive electrode, back electrode and back of the body electric field, and is sintered, and obtains solar cell.Effect present invention is generally directed to hydrogen passivation is further optimized, temperature is increased to preset temperature in reaction chamber in cell piece coating process, Preset Time is stood simultaneously, effectively other defect, the combination of impurity in propulsion hydrogen atom and other dangling bonds or cell body, increase SiNx Determination of Hydrogen Content in Film, lift cell conversion rate.
Description
Technical field
The present invention relates to field of photovoltaic technology, more specifically to a kind of preparation method of solar battery.
Background technology
The usual processing route of crystal-silicon solar cell industrialized production is：Wafer Cleaning prepares-diffusion-and carves with matte
Etching off side/remove back side phosphorosilicate glass-deposition SiNx antireflective coatings-positive counterelectrode of silk-screen printing with back of the body electric field-sintering.Wherein,
Deposition SiNx antireflective coatings mainly have following effect：Antireflective is acted on, that is, reduce reflection of the solar cell to light, improves the sun
The photoelectric transformation efficiency of energy battery；Surface passivation is acted on, that is, reduce the surface recombination of battery, improves its electrical property；Body passivation is made
With i.e. defect and impurity in passivation cell body improves battery efficiency.Therefore SiNx antireflective films are whole in crystal silicon solar batteries
Very important effect is played in manufacturing process.
In the prior art, the passivating film of crystal silicon solar energy battery is mainly using plasma reinforced chemical vapour deposition method
(PECVD) SiN is depositedXFilm.Due to SiNXHydrogen in film is releasable out, and part hydrogen molecule is tied by with the room in silicon
The modes such as conjunction, switch to hydrogen atom or hydrogen-double-void, and doping enters in crystal silicon body, in the dangling bonds or cell body on hydrogen and crystal boundary
Other defect, impurity combine, so as to play a part of passivation crystal boundary, defect or impurity, effectively lift few son of cell piece
Life-span upgrading electrical property.However, in the prior art, because hydrogen release puts less, causing the effect of passivation poor, so that battery
Minority carrier life time is short in piece, and photoelectric transformation efficiency is low.
Therefore, how during solar cell is prepared improve hydrogen burst size so that improve minority carrier life time and
Photoelectric transformation efficiency, is those skilled in the art's urgency technical issues that need to address.
The content of the invention
In order to solve the above technical problems, the present invention provides a kind of preparation method of solar battery, further improve hydrogen passivation
Effect, increase hydrogen content in its passivating film, effectively reduce compound, lifting battery the minority carrier life time of carrier, improve
Crystal silicon battery electrical property.
To achieve the above object, the present invention provides following technical scheme：
A kind of preparation method of solar battery, including：
Step S1：Silicon chip is carried out cleaning and texturing, PN junction diffusion and etching removal phosphorosilicate glass successively；
Step S2：In PN junction diffusion layer surface deposition SiNx films, obtain being coated with the silicon chip of layer of sin x films, reaction chamber
Middle temperature is increased to preset temperature while standing Preset Time, and the SiNx films are deposited again, obtains being coated with two-layer SiNx thin
The silicon chip of film；
Step S3：Positive and negative to the silicon chip for being coated with two-layer SiNx films carries out silk-screen printing, forms positive electrode, the back of the body
Electrode and back of the body electric field, and sintered, obtain solar cell.
Preferably, in above-mentioned preparation method of solar battery, the preset temperature range is 10 DEG C -30 DEG C.
Preferably, in above-mentioned preparation method of solar battery, in the step S2, in the step S2, vacuum without
In the case of pressure, the silicon chip for being coated with layer of sin x films is stood into the Preset Time.
Preferably, in above-mentioned preparation method of solar battery, the preset time range is 5min-25min.
Preferably, in above-mentioned preparation method of solar battery, in the step S2, by PCVD
Method is deposited with the SiNx films.
From above-mentioned technical proposal as can be seen that a kind of preparation method of solar battery provided by the present invention, including：Step
S1：Silicon chip is carried out cleaning and texturing, PN junction diffusion and etching removal phosphorosilicate glass successively；Step S2：In PN junction diffusion layer table
Face deposits SiNx films, obtains being coated with the silicon chip of layer of sin x films, and temperature is increased to preset temperature and stands simultaneously in reaction chamber
Preset Time, deposits the SiNx films again, obtains being coated with the silicon chip of two-layer SiNx films；Step S3：Two are coated with to described
The positive and negative of the silicon chip of layer SiNx films carries out silk-screen printing, forms positive electrode, back electrode and back of the body electric field, and is sintered,
Obtain solar cell.
Effect present invention is generally directed to hydrogen passivation is further optimized, in reaction chamber in cell piece coating process
Temperature is increased to preset temperature, while stand Preset Time, preferably can effectively advance hydrogen atom and other dangling bonds or
The combination of other defect, impurity in cell body, increases SiNx Determination of Hydrogen Content in Film, is significantly carried in terms of battery electrical property
Rise.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of preparation method of solar battery flow chart provided in an embodiment of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1 is referred to, Fig. 1 is a kind of preparation method of solar battery flow chart provided in an embodiment of the present invention.
In a kind of specific embodiment, there is provided a kind of preparation method of solar battery, including：
Step S1：Silicon chip is carried out cleaning and texturing, PN junction diffusion and etching removal phosphorosilicate glass successively；
Wherein, the detailed process that silicon chip is carried out cleaning and texturing, PN junction diffusion and etching removal phosphorosilicate glass successively please
With reference to prior art, will not be repeated here.It is pointed out that the phosphorosilicate glass at etching removal edge and the back side.
Step S2：In PN junction diffusion layer surface deposition SiNx films, obtain being coated with the silicon chip of layer of sin x films, reaction chamber
Middle temperature is increased to preset temperature, while standing Preset Time, the SiNx films is deposited again, obtains being coated with two-layer SiNx thin
The silicon chip of film.
Wherein, the silicon chip after etching is deposited into passivating film using the mode of plasma reinforced chemical vapour deposition method PECVD
Such as SiNx passivating films, after PN junction diffusion layer surface for the first time deposition passivating film step, each area of bulk temperature correspondence accordingly respectively increases
Plus preset temperature, such as 10-30 DEG C, then in the state of without gas, no pressure, inactivity, no pulse switch, by the silicon chip
Stand Preset Time.Due to SiNXIn hydrogen it is releasable out, part hydrogen molecule by the mode such as being combined with the room in silicon, turn
It is hydrogen atom or hydrogen-double-void, doping enters in crystal silicon body, the dangling bonds on hydrogen and crystal boundary or the other defect in cell body,
Impurity is combined, and so as to play a part of passivation crystal boundary, defect or impurity, the minority carrier life time for effectively lifting cell piece improves electrical
Energy.
Step S3：Positive and negative to the silicon chip for being coated with two-layer SiNx films carries out silk-screen printing, forms positive electrode, the back of the body
Electrode and back of the body electric field, and sintered, obtain solar cell.
Wherein, silk-screen printing positive electrode, back electrode and back of the body electric field, are sintered, and are completed solar cell and are prepared.Specifically
Process refer to prior art, will not be repeated here.
In order to improve the conversion efficiency of crystal silicon solar energy battery, generally in the surface of silicon chip formation texture and can all sink
The certain thickness optics antireflection film of product, passivating film is silicon nitride film as described.In casting polysilicon solar cell table
Face, then generally grow one layer of SiNx film of non-stoichiometric, and SiNx films can not only play a part of antireflective, and
The hydrogen plasma being wherein rich in also has the effect of surface passivation and body passivation, so cvd nitride silicon thin film is to prepare high efficiency
Casting polysilicon solar cell essential condition.
On the basis of above-mentioned preparation method of solar battery, the preset temperature range is 10 DEG C -30 DEG C.
On the basis of above-mentioned preparation method of solar battery, the preset time range is 5min-25min.
Certainly, preset temperature range includes but is not limited to above range with preset time range, and different film coating environments is pre-
If temperature range is different with the preset time range for standing, therefore default temperature and time of repose are carried out according to different environment
Design, in protection domain.
On the basis of above-mentioned preparation method of solar battery, in order to obtain more preferable effect, conversion efficiency is obtained higher
Solar battery sheet, in step s 2, again deposit SiNx antireflective coatings, obtain being coated with after the silicon chip of passivating film, also wrap
Include：In the state of without gas, no pressure, inactivity, no pulse switch, the silicon chip is stood into Preset Time.
Three specific embodiments presented below, are 10 DEG C -30 DEG C and Preset Time model in above-mentioned preset temperature range
Under the conditions of enclosing 5min-25min, the parameters of the solar cell for preparing.
Embodiment 1
The preparation process of solar cell refers to above-mentioned preparation process, will not be repeated here.Wherein, the side of PECVD is used
Formula obtains being coated with the silicon chip of layer of sin x films in PN junction diffusion layer surface deposition SiNx films, and temperature is increased in reaction chamber
10 DEG C, i.e. each area of bulk temperature correspondence accordingly respectively increase by 10 DEG C, in the state switched without gas, no pressure, inactivity, no pulse
Lower standing 5min, then deposits the SiNx films again, obtains being coated with the silicon chip of two-layer SiNx films.
Embodiment 2
The preparation process of solar cell refers to above-mentioned preparation process, will not be repeated here.Wherein, the side of PECVD is used
Formula obtains being coated with the silicon chip of layer of sin x films in PN junction diffusion layer surface deposition SiNx films, and temperature is increased in reaction chamber
20 DEG C, i.e. each area of bulk temperature correspondence accordingly respectively increase by 20 DEG C, in the state switched without gas, no pressure, inactivity, no pulse
Lower standing 15min, then deposits the SiNx films again, obtains being coated with the silicon chip of two-layer SiNx films.
Embodiment 3
The preparation process of solar cell refers to above-mentioned preparation process, will not be repeated here.Wherein, the side of PECVD is used
Formula obtains being coated with the silicon chip of layer of sin x films in PN junction diffusion layer surface deposition SiNx films, and temperature is increased in reaction chamber
30 DEG C, i.e. each area of bulk temperature correspondence accordingly respectively increase by 30 DEG C, in the state switched without gas, no pressure, inactivity, no pulse
Lower standing 25min, then deposits the SiNx films again, obtains being coated with the silicon chip of two-layer SiNx films.
The parameters of solar cell prepared by above three embodiment are as shown in the table：
Wherein, Comment is the contents of a project, and Number is quantity, and Uoc is open-circuit voltage, and Isc is short circuit current, and Rs is
Load resistance, Rsh is parallel resistance, and FF is fill factor, curve factor, and Eta is battery efficiency, and IRev2 is electric leakage
It can be seen that, the fill factor, curve factor in embodiment 2 is 79.87 to the maximum, thus embodiment 2 the solar energy that obtains of mode
Battery efficiency is maximum.
Each embodiment is described by the way of progressive in this specification, and what each embodiment was stressed is and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or uses the present invention.
Various modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, the present invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The scope most wide for causing.
Claims (5)
1. a kind of preparation method of solar battery, it is characterised in that including：
Step S1：Silicon chip is carried out cleaning and texturing, PN junction diffusion and etching removal phosphorosilicate glass successively；
Step S2：In PN junction diffusion layer surface deposition SiNx films, obtain being coated with the silicon chip of layer of sin x films, the middle temperature of reaction chamber
Degree is increased to preset temperature, while standing Preset Time, the SiNx films is deposited again, obtains being coated with two-layer SiNx films
Silicon chip；
Step S3：Positive and negative to the silicon chip for being coated with two-layer SiNx films carries out silk-screen printing, forms positive electrode, back electrode
And back of the body electric field, and sintered, obtain solar cell.
2. preparation method of solar battery as claimed in claim 1, it is characterised in that the preset temperature range is 10 DEG C-
30℃。
3. preparation method of solar battery as claimed in claim 3, it is characterised in that in the step S2, in vacuum without pressure
In the case of power, the silicon chip for being coated with layer of sin x films is stood into the Preset Time.
4. preparation method of solar battery as claimed in claim 3, it is characterised in that the preset time range is 5min-
25min。
5. preparation method of solar battery as claimed in claim 4, it is characterised in that in the step S2, by plasma
Chemical vapour deposition technique is deposited with the SiNx films.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107731961A (en) * | 2017-10-23 | 2018-02-23 | 浙江正泰太阳能科技有限公司 | Film plating process, preparation method and the PERC solar cells of PERC solar cells |
| CN109473508A (en) * | 2018-12-25 | 2019-03-15 | 浙江晶科能源有限公司 | A kind of solar battery method for annealing and device and preparation method of solar battery |
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|---|---|---|---|---|
| US20090260685A1 (en) * | 2008-04-17 | 2009-10-22 | Daeyong Lee | Solar cell and method of manufacturing the same |
| CN202502996U (en) * | 2012-03-29 | 2012-10-24 | 包头市山晟新能源有限责任公司 | Metallurgy polycrystalline silicon solar cell having double-layer antireflection film, and solar cell panel |
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