JP2989923B2 - Solar cell element - Google Patents
Solar cell elementInfo
- Publication number
- JP2989923B2 JP2989923B2 JP3084807A JP8480791A JP2989923B2 JP 2989923 B2 JP2989923 B2 JP 2989923B2 JP 3084807 A JP3084807 A JP 3084807A JP 8480791 A JP8480791 A JP 8480791A JP 2989923 B2 JP2989923 B2 JP 2989923B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride film
- refractive index
- film
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 40
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【０００１】[0001]
【産業上に利用分野】本発明は太陽電池素子に関し、特
に半導体基板の受光面側に反射防止膜を有する太陽電池
素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell device, and more particularly to a solar cell device having an antireflection film on a light receiving surface of a semiconductor substrate.
【０００２】[0002]
【従来の技術およびその問題点】太陽電池素子の受光面
側には、太陽電池素子の受光面部分での反射損失を低減
させるために反射防止膜を形成するのが一般的である。2. Description of the Related Art Generally, an antireflection film is formed on the light receiving surface side of a solar cell element in order to reduce reflection loss at the light receiving surface of the solar cell element.
【０００３】この反射防止膜としては、酸化シリコン
膜、酸化チタン膜、酸化タンタル膜、あるいはフッ化マ
グネシウム膜などを単層にしたり、二層にしたりする。
この場合、反射防止膜の屈折率、太陽電池素子を被覆す
るカバーガラスの屈折率、空気の屈折率の順で徐々に小
さくなるように反射防止膜の材料を選択すればよいが、
反射防止膜としては、単層のものより二層のものが効果
的である。反射防止膜を二層構造にする場合も、半導体
基板に屈折率の大きい膜を被着して、この上に屈折率の
比較的小さい膜を被着するように形成される（例えば特
開昭５７─１２６１７３号公報参照）。As the antireflection film, a silicon oxide film, a titanium oxide film, a tantalum oxide film, a magnesium fluoride film, or the like is used as a single layer or a two layer.
In this case, the material of the antireflection film may be selected so that the refractive index of the antireflection film, the refractive index of the cover glass covering the solar cell element, and the refractive index of air gradually decrease.
As the antireflection film, two layers are more effective than a single layer. When the antireflection film has a two-layer structure, a film having a large refractive index is formed on a semiconductor substrate, and a film having a relatively small refractive index is formed thereon. 57-126173).
【０００４】このような反射防止膜は、真空蒸着法、ス
パッタリング法、あるいは回転塗布法などで形成される
が、半導体基板側から順次屈折率が小さくなるような反
射防止膜を形成するには、一層目の反射防止膜の材料と
二層目の反射防止膜の材料を変えなければならず、それ
ぞれの膜を形成するために複数の装置が必要で、製造工
程も煩雑であるという問題がある。[0004] Such an antireflection film is formed by a vacuum deposition method, a sputtering method, a spin coating method, or the like. To form an antireflection film having a refractive index gradually decreasing from the semiconductor substrate side, It is necessary to change the material of the first layer anti-reflection film and the material of the second layer anti-reflection film, and there is a problem that a plurality of devices are required to form each film, and the manufacturing process is complicated. .
【０００５】そこで、例えば窒化シリコン（ＳｉｘＮ
ｙ）膜などのように、構成元素の比率を変えることによ
って屈折率を変えることができる材料で反射防止膜を形
成すれば、同一材料で順次屈折率が小さくなるように形
成でき、製造工程が簡略化できる。Therefore, for example, silicon nitride (SixN
y) If the antireflection film is formed of a material such as a film, the refractive index of which can be changed by changing the ratio of constituent elements, the same material can be formed so that the refractive index decreases sequentially, and the manufacturing process is reduced. Can be simplified.
【０００６】ところが、窒化シリコン膜を一層目の屈折
率が例えばｎ＝２．１以上のものとなり、二層目がｎ＝
２．１以下のものとなるような二層構造に形成すると、
反射率を低下させることはできるものの、太陽電池素子
の出力特性はむしろ低下するという問題があった。すな
わち、反射率は低下するが、太陽電池の短絡光電流は全
く向上せず、開放電圧は逆に低下してしまう。このよう
に、屈折率の高い窒化シリコン膜をシリコン基板上に形
成した場合に短絡光電流が向上せずしかも開放電圧が低
下する理由は明らかでないが、２５０〜６００℃程度の
温度で窒化シリコン膜を形成して室温まで降下させる際
の窒化シリコン膜のストレスでシリコン基板の表面に格
子欠陥ができ、この欠陥部分でキャリアが再結合して、
再結合損失による特性の低下を来すものと考えられる。
すなわち、より屈折率が大きくて密度の高い窒化シリコ
ン膜には、パシベーション効果がないものと思われる。However, the first layer of the silicon nitride film has a refractive index of, for example, n = 2.1 or more, and the second layer has a refractive index of n = 2.1.
2.1 When formed into a two-layer structure such that
Although the reflectance can be reduced, there is a problem that the output characteristics of the solar cell element are rather lowered. That is, although the reflectance decreases, the short-circuit photocurrent of the solar cell does not improve at all, and the open-circuit voltage decreases. Although the reason why the short-circuit photocurrent does not improve and the open-circuit voltage decreases when the silicon nitride film having a high refractive index is formed on the silicon substrate is not clear, it is not clear at a temperature of about 250 to 600 ° C. The lattice defect is formed on the surface of the silicon substrate due to the stress of the silicon nitride film when forming and lowering to room temperature, and the carriers recombine at this defect portion,
It is considered that the characteristics are deteriorated due to the recombination loss.
That is, it is considered that a silicon nitride film having a higher refractive index and a higher density has no passivation effect.
【０００７】[0007]
【課題を解決するための手段】本発明によれば、シリコ
ンから成る半導体基板内にｐ−ｎ接合部を形成して受光
面側と裏面側に電極を形成するとともに受光面側に反射
防止膜を形成して成る太陽電池素子において、前記反射
防止膜を屈折率ｎ＝２．１以下の第１の窒化シリコン膜
と、この第１の窒化シリコン膜よりも屈折率の大きい第
２の窒化シリコン膜とを順次積層して形成したことを特
徴とする太陽電池素子が提供され、そのことにより上記
目的が達成される。According to the present invention, a pn junction is formed in a semiconductor substrate made of silicon, electrodes are formed on a light receiving surface side and a back surface side, and an antireflection film is formed on a light receiving surface side. A first silicon nitride film having a refractive index n = 2.1 or less and a second silicon nitride film having a refractive index larger than that of the first silicon nitride film. A solar cell element characterized by being formed by sequentially laminating films is provided, whereby the above object is achieved.
【０００８】[0008]
【問題点を解決するための手段】本発明によれば、半導
体基板内にｐ−ｎ接合部を形成して受光面側と裏面側に
電極を形成するとともに受光面側に反射防止膜を形成し
て成る太陽電池素子において、前記反射防止膜を屈折率
ｎ＝２．１以下の第１の窒化シリコン膜と、この第１の
窒化シリコン膜よりも屈折率の大きい第２の窒化シリコ
ン膜とを順次積層して形成したことを特徴とする太陽電
池素子が提供され、そのことにより上記目的が達成され
る。According to the present invention, a pn junction is formed in a semiconductor substrate to form electrodes on a light receiving surface side and a back surface side, and an antireflection film is formed on a light receiving surface side. In the solar cell element, the antireflection film is formed of a first silicon nitride film having a refractive index n = 2.1 or less, and a second silicon nitride film having a refractive index larger than that of the first silicon nitride film. Are sequentially laminated to provide a solar cell element, which achieves the above object.
【０００９】[0009]
【作用】上記のように構成することにより、シリコンか
ら成る半導体基板表面に格子欠陥ができるのを防止でき
るとともに、反射率も低下させることができ、出力特性
の良好な太陽電池素子を提供できる。また、二層構造の
反射防止膜を同一の化合物で形成することから、同一の
装置で連続的に形成でき、製造工程も簡略化できる。With the above construction, it is possible to prevent lattice defects from being formed on the surface of the semiconductor substrate made of silicon, to reduce the reflectance, and to provide a solar cell element having good output characteristics. In addition, since the antireflection film having a two-layer structure is formed of the same compound, the antireflection film can be formed continuously by the same apparatus, and the manufacturing process can be simplified.
【００１０】[0010]
【実施例】以下、本発明を添付図面に基づき詳細に説明
する。図１は、本発明に係る太陽電池素子の一実施例を
示す断面図であり、１はシリコン基板である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing one embodiment of a solar cell element according to the present invention, where 1 is a silicon substrate.
【００１１】前記シリコン基板１は、例えばボロンなど
のｐ型不純物を含有したｐ型シリコン基板で構成され
る。このシリコン基板１は引上げ法などによって形成し
た単結晶シリコン基板やキャスティング法によって形成
した多結晶シリコン基板などで構成される。このシリコ
ン基板１の受光面側には、リン（Ｐ）などを高濃度に拡
散させたｎ＋層２が形成されており、このｎ＋層２とｐ
型シリコン基板でｐ−ｎ接合が形成される。なお、シリ
コン基板１内の裏面側には、ＢＳＦ（裏面電界）層とな
るアミニウム元素が高濃度に拡散されたｐ＋層３を形成
してもよい。The silicon substrate 1 is formed of a p-type silicon substrate containing a p-type impurity such as boron. This silicon substrate 1 is composed of a single crystal silicon substrate formed by a pulling method or the like, a polycrystalline silicon substrate formed by a casting method, or the like. On the light receiving surface side of the silicon substrate 1, an n + layer 2 in which phosphorus (P) or the like is diffused at a high concentration is formed.
A pn junction is formed on the silicon substrate. Note that a p + layer 3 in which an aminium element serving as a BSF (back surface electric field) layer is diffused at a high concentration may be formed on the back surface side in the silicon substrate 1.
【００１２】前記シリコン基板１の表面側には、屈折率
ｎ＝２．１以下の第１の窒化シリコン膜４と、この第１
の窒化シリコン膜４よりも屈折率の大きい第２の窒化シ
リコン膜５とが形成されている。第１の窒化シリコン膜
４は、シランガス（ＳｉＨ４）を０．２１ｌ／ｍｉｔ以
下、アンモニアガス（ＮＨ３）を１．５ｌ／ｍｉｔ、お
よびキャリアガスとしての窒素ガス（Ｎ２）を用いて９
０〜４５０ＫＨｚの高周波電源でグロー放電分解して堆
積させるプラズマＣＶＤ法により、シリコン基板１上に
厚み１００〜１０００Å程度に形成される。このような
第１の窒化シリコン膜は、屈折率ｎ＝２．１以下とな
る。また、このようにアンモニアガスの流量比を相対的
に多くすることによって、パシベーション効果を持た
せ、シリコン基板１表面に格子欠陥が生じるのを低減さ
せることができるものと考えられる。On the front side of the silicon substrate 1, a first silicon nitride film 4 having a refractive index n = 2.1 or less is formed.
And a second silicon nitride film 5 having a higher refractive index than the silicon nitride film 4. The first silicon nitride film 4 is formed using a silane gas (SiH4) of 0.21 l / mit or less, an ammonia gas (NH3) of 1.5 l / mit, and a nitrogen gas (N2) as a carrier gas.
It is formed on the silicon substrate 1 to a thickness of about 100 to 1000 ° by a plasma CVD method in which glow discharge decomposition and deposition are performed with a high-frequency power supply of 0 to 450 KHz. Such a first silicon nitride film has a refractive index n = 2.1 or less. In addition, it is considered that by relatively increasing the flow rate ratio of the ammonia gas in this manner, a passivation effect can be provided and the occurrence of lattice defects on the surface of the silicon substrate 1 can be reduced.
【００１３】前記第１の窒化シリコン膜４上に、第２の
窒化シリコン膜５を形成する。この第２の窒化シリコン
膜４もプラズマＣＶＤ法により形成される。この第２の
窒化シリコン膜は、シランガス（ＳｉＨ４）の流量比を
０．２１ｌ／ｍｉｔ以上に設定して形成する他は第１の
窒化シリコン膜と同一の条件で厚み６００Å程度に形成
される。この第２の窒化シリコン膜５は、第１の窒化シ
リコン膜４の屈折率よりも大きくなるように形成すれば
よく、屈折率ｎ＝２．０以上となるように形成すること
により、反射率を低下させることができる。すなわち、
第１の窒化シリコン膜３が２．０以下の場合でも、この
第２の窒化シリコン膜の屈折率は２．０以上にすること
が望ましい。この第２の窒化シリコン膜５は、第１の窒
化シリコン膜と同一のプラズマＣＶＤ装置を用いて連続
して形成することができるOn the first silicon nitride film 4, a second silicon nitride film 5 is formed. This second silicon nitride film 4 is also formed by the plasma CVD method. The second silicon nitride film is formed to have a thickness of about 600 ° under the same conditions as the first silicon nitride film except that the flow rate ratio of the silane gas (SiH4) is set to 0.21 l / mit or more. The second silicon nitride film 5 may be formed so as to have a refractive index higher than that of the first silicon nitride film 4. Can be reduced. That is,
Even when the first silicon nitride film 3 is 2.0 or less, it is desirable that the refractive index of the second silicon nitride film be 2.0 or more. This second silicon nitride film 5 can be formed continuously using the same plasma CVD device as the first silicon nitride film.
【００１４】なお、前記シリコン基板１の裏面側には、
ＢＳＲ（裏面側反射防止）膜を兼ねるＡｌなどから成る
裏面側電極６がスクリーン印刷法や蒸着法によって形成
され、シリコン基板１の裏面側には、反射防止膜４、５
を部分的に除去して表面側電極７が形成される。Incidentally, on the back side of the silicon substrate 1,
A backside electrode 6 made of Al or the like also serving as a BSR (backside antireflection) film is formed by a screen printing method or a vapor deposition method.
Is partially removed to form the surface-side electrode 7.
【００１５】[0015]
【実験例】キャスティング法で形成した多結晶シリコン
基板上に、厚みが６６０Åで屈折率ｎ＝２．０、ｎ＝
２．２、ｎ＝２．３の窒化シリコン膜から成る一層構造
の反射防止膜を形成した試料１、２、３と、厚みが６６
０Åで屈折率ｎ＝２．０の第１の窒化シリコン膜と厚み
が３５０Åで屈折率ｎ＝２．３の第２の窒化シリコン膜
とから成る二層構造の反射防止膜を形成した試料４のそ
れぞれの短絡電流Ｉｓｃ（ｍＡ）、開放電圧Ｖｏｃ
（Ｖ）、変換効率Ｅｆｆｉ．（％）、曲線因子Ｆ．Ｆを
それぞれ下表に示す。[Experimental example] On a polycrystalline silicon substrate formed by a casting method, a thickness of 660 ° and a refractive index of n = 2.0, n =
Samples 1, 2, and 3 having a single-layered antireflection film formed of a 2.2, n = 2.3 silicon nitride film
Sample 4 in which a two-layered antireflection film formed of a first silicon nitride film having a refractive index of n = 2.0 at 0 ° and a second silicon nitride film having a refractive index of n = 2.3 having a thickness of 350 ° was formed. Short circuit current Isc (mA), open circuit voltage Voc
(V), conversion efficiency Effi. (%), Fill factor F. F is shown in the table below.
【００１６】 表 試料No. 屈折率 Isc(mA) Voc(V) Effi.(%) F.F 1. n=2.0 30.38 0.585 13.24 0.745 2. n=2.2 30.52 0.577 12.92 0.734 3. n=2.3 29.15 0.565 11.99 0.728 4. n=2.0/n=2.3 32.50 0.597 14.45 0.745 Table Sample No. Refractive index Isc (mA) Voc (V) Effi. (%) FF 1.n = 2.0 30.38 0.585 13.24 0.745 2.n = 2.2 30.52 0.577 12.92 0.734 3.n = 2.3 29.15 0.565 11.99 0.728 4.n = 2.0 / n = 2.3 32.50 0.597 14.45 0.745
【００１７】上記表から明らかなように、屈折率ｎ＝
２．２、ｎ＝２．３の試料２および試料３では、開放電
圧Ｖｏｃが０．５９７、０．５６５と低く、窒化シリコ
ン膜によるパシベーション効果が表れず、変換効率のＥ
ｆｆｉ．も低いものとなる。一方、屈折率ｎ＝２．０の
試料１では、反射防止膜の反射率が比較的大きいことか
ら短絡電流Ｉｓｃはそれほど伸びないが、開放電圧Ｖｏ
ｃは大きく伸び、窒化シリコン膜によるパシベーション
効果が認められる。さらに、試料１のものに、反射率を
低下させるための屈折率の大きい（ｎ＝２．３）窒化シ
リコン膜をつけて二層構造とした試料４のものでは、短
絡電流Ｉｓｃが大きく伸びるとともに、開放電圧Ｖｏｃ
も最も高くなる。As is clear from the above table, the refractive index n =
In Samples 2 and 3 in which 2.2 and n = 2.3, the open-circuit voltage Voc was as low as 0.597 and 0.565, the passivation effect of the silicon nitride film did not appear, and the conversion efficiency E
ffi. Will also be low. On the other hand, in the sample 1 having a refractive index n = 2.0, the short-circuit current Isc does not increase so much because the reflectance of the antireflection film is relatively large, but the open-circuit voltage Vo
c greatly increases, and a passivation effect by the silicon nitride film is observed. Further, in the sample 4 having a two-layer structure in which a silicon nitride film having a large refractive index (n = 2.3) for lowering the reflectance is added to the sample 1, the short-circuit current Isc is greatly increased. , Open circuit voltage Voc
Will also be the highest.
【００１８】[0018]
【発明の効果】以上のように、本発明に係る太陽電池素
子によれば、反射防止膜が屈折率ｎ＝２．１以下の第１
の窒化シリコン膜と、この第１の窒化シリコン膜よりも
屈折率の大きい第２の窒化シリコン膜とを順次積層して
形成したことから、シリコンから成る半導体基板表面の
近傍に格子欠陥ができるのを防止できるとともに、反射
率も低下させることができ、出力特性の良好な太陽電池
素子を提供できる。また、二層構造の反射防止膜を一つ
の装置で連続して形成でき、製造工程も簡略化される。As described above, according to the solar cell device of the present invention, the antireflection film has the first refractive index n = 2.1 or less.
And a second silicon nitride film having a refractive index higher than that of the first silicon nitride film are sequentially laminated, so that a lattice defect can be formed near the surface of the semiconductor substrate made of silicon. Can be prevented, the reflectance can be reduced, and a solar cell element having good output characteristics can be provided. Further, the antireflection film having a two-layer structure can be continuously formed by one apparatus, and the manufacturing process is also simplified.
【００１９】[0019]
【図１】図１は本発明に係る太陽電池素子の一実施例を
示す断面図FIG. 1 is a cross-sectional view showing one embodiment of a solar cell element according to the present invention.
１：半導体基板 ２：ｎ＋領域 ３：ｐ＋領域 ４：第１の窒化シリコン膜 ５：第２の窒化シリコン膜 ６：裏面電極 ７：受光面側電極 1: semiconductor substrate 2: n + region 3: p + region 4: first silicon nitride film 5: second silicon nitride film 6: back surface electrode 7: light receiving surface side electrode
フロントページの続き (56)参考文献 特開 昭57−5374（ＪＰ，Ａ) 特開 昭59−105382（ＪＰ，Ａ) 特開 昭59−200473（ＪＰ，Ａ) 特開 昭61−222228（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 31/04 - 31/078 Continuation of front page (56) References JP-A-57-5374 (JP, A) JP-A-59-105382 (JP, A) JP-A-59-200473 (JP, A) JP-A-61-222228 (JP) , A) (58) Field surveyed (Int.Cl. 6 , DB name) H01L 31/04-31/078
Claims (1)
接合部を形成して受光面側と裏面側に電極を形成すると
ともに受光面側に反射防止膜を形成して成る太陽電池素
子において、前記反射防止膜を屈折率ｎ＝２．１以下の
第１の窒化シリコン膜と、この第１の窒化シリコン膜よ
りも屈折率の大きい第２の窒化シリコン膜とを順次積層
して形成したことを特徴とする太陽電池素子。1. A semiconductor substrate made of silicon has pn
In a solar cell element comprising a junction portion, electrodes formed on a light receiving surface side and a back surface side, and an antireflection film formed on a light receiving surface side, the antireflection film has a refractive index n = 2.1 or less. A solar cell element comprising: a first silicon nitride film; and a second silicon nitride film having a higher refractive index than the first silicon nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3084807A JP2989923B2 (en) | 1991-03-25 | 1991-03-25 | Solar cell element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3084807A JP2989923B2 (en) | 1991-03-25 | 1991-03-25 | Solar cell element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04296063A JPH04296063A (en) | 1992-10-20 |
| JP2989923B2 true JP2989923B2 (en) | 1999-12-13 |
Family
ID=13840993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3084807A Expired - Lifetime JP2989923B2 (en) | 1991-03-25 | 1991-03-25 | Solar cell element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2989923B2 (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2661676B2 (en) * | 1994-09-06 | 1997-10-08 | 株式会社日立製作所 | Solar cell |
| JP2002270879A (en) * | 2001-03-14 | 2002-09-20 | Mitsubishi Electric Corp | Semiconductor device |
| JP4540447B2 (en) | 2004-10-27 | 2010-09-08 | シャープ株式会社 | Solar cell and method for manufacturing solar cell |
| JP5063875B2 (en) * | 2005-07-27 | 2012-10-31 | パナソニック株式会社 | Manufacturing method of optical semiconductor device |
| JP5409007B2 (en) * | 2005-11-08 | 2014-02-05 | エルジー・エレクトロニクス・インコーポレーテッド | High efficiency solar cell and preparation method thereof |
| JP4864661B2 (en) * | 2006-11-22 | 2012-02-01 | 東京エレクトロン株式会社 | Solar cell manufacturing method and solar cell manufacturing apparatus |
| KR101241617B1 (en) * | 2006-12-01 | 2013-03-08 | 샤프 가부시키가이샤 | Solar cell and method of manufacturing the same |
| JP5014223B2 (en) * | 2008-03-25 | 2012-08-29 | 三菱電機株式会社 | Method for manufacturing solar cell and method for manufacturing solar cell module |
| JP2008277860A (en) * | 2008-07-10 | 2008-11-13 | Toyota Motor Corp | Photoelectric converting element |
| JP5004932B2 (en) * | 2008-12-04 | 2012-08-22 | シャープ株式会社 | Solar cell and method for manufacturing solar cell |
| DE102009025977A1 (en) | 2009-06-16 | 2010-12-23 | Q-Cells Se | Solar cell and manufacturing process of a solar cell |
| DE102009044052A1 (en) * | 2009-09-18 | 2011-03-24 | Schott Solar Ag | Crystalline solar cell, process for producing the same and process for producing a solar cell module |
| KR101155890B1 (en) * | 2009-10-28 | 2012-06-20 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
| DE102011081863A1 (en) * | 2011-08-31 | 2013-02-28 | Robert Bosch Gmbh | Solar cell and process for its production |
| JP2014022428A (en) * | 2012-07-13 | 2014-02-03 | Sharp Corp | Solar cell and solar cell module |
| JP2014229712A (en) * | 2013-05-21 | 2014-12-08 | 株式会社カネカ | Solar cell and method for manufacturing the same, and solar cell module |
-
1991
- 1991-03-25 JP JP3084807A patent/JP2989923B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JPH04296063A (en) | 1992-10-20 |
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