CN109659395A - A kind of passivating back method of PERC solar cell - Google Patents
A kind of passivating back method of PERC solar cell Download PDFInfo
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- CN109659395A CN109659395A CN201811556930.XA CN201811556930A CN109659395A CN 109659395 A CN109659395 A CN 109659395A CN 201811556930 A CN201811556930 A CN 201811556930A CN 109659395 A CN109659395 A CN 109659395A
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- passivating material
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- 238000000034 method Methods 0.000 title claims abstract description 84
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 22
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 22
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000000137 annealing Methods 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims abstract description 16
- 230000000694 effects Effects 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical group [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 18
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 238000007650 screen-printing Methods 0.000 claims description 10
- 239000000395 magnesium oxide Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 5
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 25
- 238000002161 passivation Methods 0.000 description 37
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 238000002207 thermal evaporation Methods 0.000 description 15
- 238000012360 testing method Methods 0.000 description 11
- 229910004205 SiNX Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 8
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 230000027756 respiratory electron transport chain Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000000415 inactivating effect Effects 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 3
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 2
- 229910000024 caesium carbonate Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- CMWTZPSULFXXJA-VIFPVBQESA-N naproxen Chemical compound C1=C([C@H](C)C(O)=O)C=CC2=CC(OC)=CC=C21 CMWTZPSULFXXJA-VIFPVBQESA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011698 potassium fluoride Substances 0.000 description 2
- 235000003270 potassium fluoride Nutrition 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 description 1
- VWUQHKHOYGKMQK-UHFFFAOYSA-N [O].[Si].[Ti] Chemical compound [O].[Si].[Ti] VWUQHKHOYGKMQK-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of passivating back methods of PERC solar cell.This method is handling the clean figuratum passivating material in the cell backside string of deposits using the method for direct mask, then realizes the effect of passivating back by annealing process again.This method passivating film deposits low in cost, simple process, does not remove only the laser opening technique of conventional PERC battery, and widened the selection of passivating material and reduced the requirement of depositing device, has the advantages that simplified technique reduces cost；It is applied widely, help preferably to promote and find more cheap passivating material, there is good popularization and application foreground.
Description
Technical field
The invention belongs to technical field of solar cells.More particularly, to a kind of passivating back side of PERC solar cell
Method.
Background technique
PERC(Passivated Emitterand Rear Cell) technology is relative to conventional batteries, mainly in battery
The method that the back side uses the contact of local metal, thus greatly reduces recombination-rate surface, improves the efficiency of battery.
Currently, conventional PERC battery, using PECVD or ALD first in one layer of silica of backside deposition of battery or oxidation
Then aluminium carries out laser slotting as the passivation layer at the back side on the passivation layer, then carry out subsequent battery preparation technique.But
The technique due to using first overall growth passivation layer, then carrying out the mode of laser slotting again in deposit passivation layer, not only plus
More grooving processes, and bring damage of slotting also tends to that further chemical polishing is needed to reduce, at the same used in addition compared with
It is expensive ALD or PECVD as depositing device, therefore will be by biggish system in terms of process costs and simple process
About.
Currently, more and more manufacturers are introducing PERC technology, and PERC battery is also still faced with and how further to drop
Low production cost improves the challenge such as battery performance.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the defects and deficiency of existing PERC battery back passivating technique, provide one
Kind for efficient PERC solar cell passivating back process, not only can be shortened processing step, low in cost, simultaneously will
A better platform is provided, to screen and using more cheap passivating material.
The object of the present invention is to provide a kind of PERC solar cells to carry on the back passivating method.
Above-mentioned purpose of the present invention is achieved through the following technical solutions:
A kind of passivating back method of PERC solar cell, the method using direct mask are handling clean cell backside deposition
With figuratum passivating material, the effect of passivating back is then realized by annealing process again.
Wherein it is preferred to which the direct mask method can be using screen printing screens in the cell backside
With figuratum passivating material described in brushing, it is also possible to described in being deposited using metal mask version in the cell backside
With figuratum passivating material.
Preferably, the pattern is grid pattern or stripe, and is evenly distributed in the back side of battery.
Preferably, the passivating material is one of metal oxide, active metal or solution passivating material or several
Kind combination.
Preferably, the metal oxide be magnesia, molybdenum trioxide, vanadic anhydride, tungstic acid, titanium oxide,
One of magnesia, tantalum oxide, zinc oxide, niobium oxide, gallium oxide, nickel oxide.
Preferably, the active metal is one of calcium, titanium, magnesium, copper, chromium, caesium or alloy, and passivating material deposition of thick
Degree is 0.5~5nm.
Preferably, when passivating material is active metal, deposition thickness is 0.5~5nm.
Preferably, when passivating material is metal oxide, deposition thickness is 10~100nm.
Preferably, when the passivating material is metal, the annealing process is to carry out in the atmosphere of pure oxygen.
Preferably, the gas that annealing process is led to be one of nitrogen, oxygen, nitrogen oxygen atmosphere, nitrogen and hydrogen mixture, and
Annealing temperature controls between 100~800 DEG C.
In the passivating back technique of the above-mentioned PERC solar cell of the present invention, the principle of metal oxide passivation, mainly
The metal oxide of deposition can fill up the dangling bonds of silicon face under the action of annealing, so that the defect state for reducing silicon face is close
Degree, to play the effect of passivation.Some of which metal oxide simultaneously, can generate fixed charge after deposition anneal,
And these fixed charges can further generate the effect of similar field passivation to silicon chip surface, as aluminium oxide can form fixed bear
Charge, to further increase passivation effect.And another aspect deposited metal, then pure oxygen anneal processing is carried out, form passivation
Principle, mainly during pure oxygen anneal, metal is oxidized and can form the chemistry of metal and oxygen and silicon on the surface of silicon
Key if Titanium and silicon form silicon oxygen titanium key during pure oxygen anneal, and reduces the dangling bonds of silicon face, forms passivation effect
Fruit.In order to allow oxygen that can reach the surface of silicon in thermal diffusion, therefore when deposited metal, the thickness of metal cannot be too thick.
The invention has the following advantages:
(1) passivating film deposition is low in cost.The deposition of passivating material does not need expensive PECVD or ALD equipment, only
Need cheap thermal evaporation instrument or screen printing apparatus.
(2) simple process.Without laser opening, conventional PERC battery needs laser opening, goes damaging layer.And
Method of the invention needs the pattern of directly contact metal electrode due to just introducing when depositing passivating film, so nothing
Hole opening technology need to be increased, to greatly reduced processing step.
(3) applied widely.Method due to using relatively simple physical deposition, the passivation being applicable in
Material ranges are wider, therefore, help preferably to promote and find more cheap passivating material.
Therefore the technology of the present invention improves battery performance etc., has important progress for reducing PERC battery production cost
Meaning and value.
Detailed description of the invention
Fig. 1 is the basic block diagram of PERC solar battery provided by the invention.
Fig. 2 is the pattern of the metal mask version in Examples 1 to 3 provided by the invention.
Fig. 3 is the pattern of the screen printing screens in embodiment 4 provided by the invention.
Fig. 4 is the sample structure figure of the test inactivating performance in embodiment 1 ~ 2 provided by the invention.
Fig. 5 is the test result figure of the test inactivating performance in embodiment 1 ~ 2 provided by the invention.
Specific embodiment
The present invention is further illustrated below in conjunction with Figure of description and specific embodiment, but embodiment is not to the present invention
It limits in any form.Unless stated otherwise, the present invention uses reagent, method and apparatus routinely try for the art
Agent, method and apparatus.
Unless stated otherwise, following embodiment agents useful for same and material are commercially available.
Embodiment 1
1, a kind of n-SiPERC solar battery, the solar cell include front surface A g gate line electrode 1, Al2O3/ SiNx passivation
Anti-reflection layer 2, p+- Si doped layer 3, n-type silicon wafer substrate 4, electron transfer layer 5, passivation layer 6, aluminum back electrode 7.
(1) Facad structure of the PERC solar battery described in is using industrial conventional process preparation.
The specific method is as follows:
1) p described in+- Si doped layer 3 is using industrial conventional high-temperature diffusion process preparation.
2) the passivated reflection reducing layer 2 described in is deposited on the top of the silicon wafer substrate 4.The wherein Al2O3Using ALD
Method be first deposited upon the silicon wafer substrate 4 top as passivation layer, then existed using SiNx described in PECVD deposition
The Al2O3Top is as anti-reflection layer.
3) the front surface A g gate line electrode 1 described in is deposited on the top of the SiNx using the method for silk-screen printing, then
By the method for high temperature sintering, so that the front surface A g gate line electrode 1 directly burns the SiNx film and the p+-
Si doped layer 3 is connected directly.
(2) the passivating back technique of the n-SiPERC solar cell described in is right using Direct precipitation metal oxide of the present invention
The technique of after annealing is realized.The specific method is as follows:
1) passivation layer 6 described in passes through metal mask version 8 in the backside deposition of the PERC battery using the method for thermal evaporation.It is blunt
Change the thickness control of layer in 10~50nm.
The material of the passivation layer is one of magnesia or aluminium oxide.
Stripe width ratios L1/L2 can be adjusted according to the needs in the metal mask version 8, and general control L1/L2 exists
0.5 ~ 0.99 range.
2) after having deposited passivation layer, metal mask version 8 is removed, then the electronics described using the method deposition of thermal evaporation
Transport layer 5, deposition thickness are controlled in 0.5 ~ 3nm.
The material of the electron transfer layer is one of magnesia, lithium fluoride, magnesium fluoride, potassium fluoride or cesium carbonate.
3) after having deposited electron transfer layer, using the method deposition of the thermal evaporation aluminum back electrode.
4) battery that will be obtained is annealed.Annealing temperature control at 100~450 DEG C, annealing time control 10~
300min。
2, the passive behavior test of passivating material is carried on the back
(1) the passive behavior test described in carries out on the sample of passivation on double surfaces, and the sample of the passivation on double surfaces its structure is such as
Shown in Fig. 4, corresponding preparation process is as follows:
1) body life time is chosen in the N-shaped twin polishing silicon wafer 10 of 3 ms or more, using the RCA cleaning method of common process to silicon wafer
Cleaning, is then handled its surface with ~ 4% HF.
2) silicon wafer that will have been handled is put into two-sided vapor deposition 10nm metal oxide film 6 in thermal evaporation instrument.
3) it by the sample of the good passivation on double surfaces film of length, is put into tube furnace and anneals under air atmosphere, with activation passivation effect
Fruit.Wherein preferably after, the annealing temperature of magnesia is 200 DEG C, and aluminium oxide is 450 DEG C.
(2) test of inactivating performance is carried out using the common Sinton instrument of industry, and Fig. 5 gives test result.From knot
Fruit can see, and after peromag and aluminium oxide passivation, the minority carrier life time of the sample of test is obviously improved.Specifically
In order to facilitate comparison, we can read same implantation concentration 1 × 1015 cm-3Under the minority carrier life time of sample compare.This
When, sample can be obviously read before not being passivated only less than 3 μ s minority carrier life times, illustrate that surface recombination is very serious, and
After the passivation layer for preparing aluminium oxide and magnesia, corresponding minority carrier life time is promoted respectively to 937 μ s and 560 μ s, illustrates this
Two kinds of materials reduce surface recombination, play significant passivation effect.
Embodiment 2
1, a kind of n-SiPERC solar cell, the solar cell include front surface A g gate line electrode 1, Al2O3/ SiNx passivation subtracts
Anti- layer 2, p+- Si doped layer 3, n-type silicon wafer substrate 4, electron transfer layer 5, passivation layer 6, aluminum back electrode 7.
(1) the Facad structure preparation method of the PERC solar cell described in is such as embodiment 1.
(2) the passivating back technique of the n-SiPERC solar cell described in then uses the work of first deposited metal and then thermal oxide
Skill is realized.The specific method is as follows:
1) passivation layer 6 described in passes through metal mask version 8 in the backside deposition of the PERC battery using the method for thermal evaporation.It is blunt
Change the thickness control of layer in 1~5nm.
The material of the passivation layer is one of calcium, titanium, magnesium, copper, chromium.
Stripe width ratios L1/L2 can be adjusted according to the needs in the metal mask version 8, and general control L1/L2 exists
0.5~0.99 range.
2) it after having deposited passivation layer, anneals under oxygen atmosphere.The annealing temperature controls the annealing at 100~300 DEG C
Time controls in 10~300min.
3) after the completion of annealing, using the method deposition of the thermal evaporation electron transfer layer 5, deposition thickness control 0.5 ~
3nm。
The material of electron transfer layer is one of magnesia, lithium fluoride, magnesium fluoride, potassium fluoride or cesium carbonate.
4) after having deposited electron transfer layer, using the method deposition of the thermal evaporation aluminum back electrode.
2, the passive behavior test of passivating material is carried on the back
(1) described in passive behavior test structure it is same as Example 1, and prepare passive sample the step of also with embodiment 1
It is identical, only in deposition, first in the Ti of two sides vapor deposition 1.5nm or so, 250 DEG C are then carried out in the annealing furnace for being connected with pure oxygen
Annealing, annealing time 30min.
(2) test of inactivating performance is carried out using the common Sinton instrument of industry, and data result is equally shown in Fig. 5
In.It can see implantation concentration 1 × 1015 cm-3Under, using the oxidation titanium film of titanyl, the minority carrier life time of sample also reaches
725 μ s illustrate its outstanding passivation effect.
Embodiment 3
A kind of p-SiPERC solar cell, the solar cell include front surface A g gate line electrode 1, SiO2/ SiNx passivated reflection reducing
Layer 2, n+- Si doped layer 3, p-type silicon wafer substrate 4, hole transmission layer 5, passivation layer 6, silver-colored back electrode 7.
(1) Facad structure of the p-SiPERC solar cell described in is using industrial conventional process preparation and specific
Step is similar with embodiment 1.The specific method is as follows:
1) n described in+- Si doped layer 3 is using industrial conventional high-temperature diffusion process preparation.
2) the passivated reflection reducing layer 2 described in is deposited on the top of the silicon wafer substrate 4.The wherein SiO2Using high temperature
The method of thermal oxide is formed, then using the PECVD deposition SiNx in the SiO2Top is as anti-reflection layer.
3) the front surface A g gate line electrode 1 described in is deposited on the top of the SiNx using the method for silk-screen printing, then
By the method for high temperature sintering, so that the front surface A g gate line electrode 1 directly burns the SiNx film and the n+-
Si doped layer 3 is connected directly.
(2) the passivating back technique of the p-SiPERC solar battery described in then uses Direct precipitation high work function metal to aoxidize
The method of object is realized.The specific method is as follows:
1) passivation layer 6 described in is heavy at the back side of the p-SiPERC battery by metal mask version 8 using the method for thermal evaporation
Product.The thickness control of passivation layer is in 10~100nm.
The material of the passivation layer is one of molybdenum oxide, vanadic anhydride, tungstic acid, nickel oxide.
Stripe width ratios L1/L2 can be adjusted according to the needs in the metal mask version 8, and general control L1/L2 exists
0.5~0.99 range.
2) hole transmission layer described in is deposited using the method for thermal evaporation, and deposition thickness is controlled in 1~20nm.
The material of the hole transmission layer is one of molybdenum oxide, vanadic anhydride, tungstic acid, nickel oxide.
3) after having deposited hole transmission layer, using the method deposition of the thermal evaporation silver-colored back electrode.
Embodiment 4
A kind of p-SiPERC solar cell, the solar cell include front surface A g gate line electrode 1, SiO2/ SiNx passivated reflection reducing
Layer 2, n+- Si doped layer 3, p-type silicon wafer substrate 4, hole transmission layer 5, passivation layer 6, silver-colored back electrode 7.
(1) the Facad structure preparation method of the p-SiPERC solar cell described in is the same as embodiment 3.
(2) the passivating back technique of the p-SiPERC solar cell described in then uses the method printing solutions of silk-screen printing
The method of passivating material is realized.The specific method is as follows:
1) passivation layer 6 described in is printed on the back side of the p-SiPERC battery using the method for silk-screen printing.
The material of the passivation layer is solution passivating material.
Mesh width and mesh density in the screen printing screens 9 of the silk-screen printing use can according to need tune
Section.
2) hole transmission layer described in is deposited using the method for thermal evaporation, and deposition thickness is controlled in 1~20nm.
The material of the hole transmission layer is one of molybdenum oxide, vanadic anhydride, tungstic acid, nickel oxide.
3) after having deposited hole transmission layer, using the method deposition of the thermal evaporation silver-colored back electrode.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. a kind of passivating back method of PERC solar cell, which is characterized in that clean in processing using the method for direct mask
The figuratum passivating material in the cell backside string of deposits realize the effect of passivating back then again by annealing process.
2. method according to claim 1, which is characterized in that the direct mask method can be using silk-screen printing net
Version is brushed described with figuratum passivating material in the cell backside, is also possible to using metal mask version described
With figuratum passivating material described in cell backside deposition.
3. method according to claim 1 or claim 2, which is characterized in that the pattern is grid pattern or stripe, and equal
The even back side for being distributed in battery.
4. method according to claim 1 or claim 2, which is characterized in that the passivating material be metal oxide, active metal or
The combination of one or more of solution passivating material.
5. method according to claim 4, which is characterized in that the metal oxide is magnesia, molybdenum trioxide, five oxygen
Change one of two vanadium, tungstic acid, titanium oxide, magnesia, tantalum oxide, zinc oxide, niobium oxide, gallium oxide, nickel oxide.
6. method according to claim 4, which is characterized in that the active metal is calcium, titanium, magnesium, copper, chromium, one in caesium
Kind or alloy, and passivating material deposition thickness is 0.5~5nm.
7. method according to claim 4, which is characterized in that when passivating material is active metal, deposition thickness be 0.5~
5nm。
8. method according to claim 4, which is characterized in that when passivating material is metal oxide, deposition thickness be 10~
100nm。
9. method according to claim 1, which is characterized in that the passivating material be metal when, the annealing process be
It is carried out in the atmosphere of pure oxygen.
10. method according to claim 1, which is characterized in that the gas that annealing process is led to is nitrogen, oxygen, nitrogen oxygen are mixed
One of gas, nitrogen and hydrogen mixture are closed, and annealing temperature control is between 100~800 DEG C.
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| CN114678430A (en) * | 2022-02-17 | 2022-06-28 | 苏州大学 | Electron selective passivation contact structure, solar cell and preparation method |
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