CN108269863A - A kind of high mechanical load crystal silicon battery - Google Patents
A kind of high mechanical load crystal silicon battery Download PDFInfo
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- CN108269863A CN108269863A CN201711433307.0A CN201711433307A CN108269863A CN 108269863 A CN108269863 A CN 108269863A CN 201711433307 A CN201711433307 A CN 201711433307A CN 108269863 A CN108269863 A CN 108269863A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 77
- 239000010703 silicon Substances 0.000 title claims abstract description 77
- 239000013078 crystal Substances 0.000 title claims abstract description 42
- 238000009826 distribution Methods 0.000 claims abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 15
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 14
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 14
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 17
- 239000012634 fragment Substances 0.000 abstract description 12
- 238000003466 welding Methods 0.000 abstract description 8
- 238000013461 design Methods 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 12
- 239000000243 solution Substances 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 230000011218 segmentation Effects 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 210000003850 cellular structure Anatomy 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 230000002000 scavenging effect Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000003090 exacerbative effect Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 210000002435 tendon Anatomy 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of high mechanical load crystal silicon batteries, the backplate of the crystal silicon battery includes the grid line of the parallel distribution of multiple row, each column grid line includes the six sections or eight sections sub- grid lines separately set, and gap is equipped between the both ends of every a sub- grid line and the back surface field.The crystal silicon battery passes through the structural adjustment to backplate and lbg, so as to which backplate position discontinuity and damage from laser aggravation backplate stress in welding process is avoided battery to be made to be easier there is a situation where brittle fracture, and assembly end fragment rate and lifting assembly resistance to mechanical load-carrying ability are reduced to realize in terms of the two.
Description
Technical field
The invention belongs to technical field of solar batteries, and in particular to a kind of high mechanical load crystal silicon battery.
Background technology
It with the progress of human lives, increases sharply for the demand of the energy, however occupies gross generation 70% in the world
Above thermal power generation, since increasingly in short supply and environment run down of resource has become increasingly noticeable ask
Topic.Solar energy is also increasingly valued by people as renewable resource for generating electricity.
In recent years, with the development of crystal silicon solar energy battery technology, silicon wafer thickness is also gradually thinned to reduce photovoltaic hair
Electric cost, but what wafer thinning brought therewith is the resistance to mechanical load-carrying ability of the rising of fragment rate and component in itself in establishment of component
Decline, the exploitation of particularly PERC (passivation emitter back side battery) technique, the increase of lbg link makes battery in component
Fragment rate in making is further up, and the resistance to mechanical load-carrying ability of component in itself also further declines.In this case, respectively
The scheme of kind lifting assembly resistance to mechanical load-carrying ability is also gradually emerged in large numbers.Patent CN104935247A, which uses to increase in module frame, to be added
For the method for strengthening tendons with lifting assembly resistance to mechanical load-carrying ability, this method effectively reduces the battery fragment rate after component is pressurized
And power loss, but this method not only increases additional reinforcing rib in establishment of component, and Material Cost increases, while also needs
Increase additional station to realize that reinforcing rib is installed, processing step is cumbersome and increases additional human cost.
Invention content
The purpose of the present invention is to provide a kind of high mechanical load crystal silicon battery, which passes through to backplate
And the structural adjustment of lbg, so as to avoid backplate position discontinuity and laser damage in welding process
Wound aggravation backplate stress makes battery be easier there is a situation where brittle fracture, and is reduced in terms of the two to realize
Assembly end fragment rate and lifting assembly resistance to mechanical load-carrying ability.
The above-mentioned purpose of the present invention is achieved through the following technical solutions：A kind of high mechanical load crystal silicon battery,
The backplate of the crystal silicon battery includes the grid line of the parallel distribution of multiple row, and each column grid line is separately set including six sections or eight sections
The sub- grid line put is equipped with gap between the both ends of every a sub- grid line and the back surface field.
Backplate is changed to six segmentations or the sub- grid line structure of eight segmentations, back side electricity by traditional three-stage or four-part form
The stress distribution generated in backplate sintering process is gone out in the multisection type design of pole, and reducing component should in pressurized process
The influence of power, so as to reduce the fragment ratio and power attenuation percentage in mechanical load test process.
Gap is equipped between the both ends of every a sub- grid line and the back surface field, in this way, avoiding to weld in welding process
Band overleaf electrode end positions due to caused by the difference in height of backplate, back surface field lap position and backplate welding
Position discontinuity is so as to cause hidden the phenomenon that splitting generation.
As a modification of the present invention, crystal silicon battery of the present invention is preferably PERC crystal silicon batteries.
When the crystal silicon battery is preferably PERC crystal silicon batteries, the back side of the PERC crystal silicon batteries is equipped with passivation
Film, the passivating film are equipped with lbg line, and the lbg line disconnects at the backplate position.
The design that lbg line is overleaf disconnected at electrode position, since the introducing of PERC crystal silicon cells makes crystalline silicon
Battery efficiency is improved, but lbg increases the damage to silicon substrate, particularly overleaf electrode edge position,
The damage of laser is even more to exacerbate the nucleation of crackle, and battery is caused to be easier brittle failure；Therefore lbg line must be in back electrode
Position disconnects.
Further, the passivating film is preferably aluminium oxide and silicon nitride stack passivating film.
The preparation method of the above-mentioned high mechanical load crystal silicon battery of the present invention, includes the following steps：
(1) crystalline silicon battery plate is chosen, silicon chip surface is cleaned after making herbs into wool；
(2) silicon chip carries out phosphorus diffusion after cleaning；
(3) the P/N knots and phosphorosilicate glass formed after phosphorus diffusion is removed；
(4) passivating film is deposited in front side of silicon wafer；
(5) in silicon chip back side printed back electrode and back surface field；
(6) front electrode is printed in front side of silicon wafer, high mechanical load crystal silicon battery is formed after co-sintering.
Further, when the crystal silicon battery is PERC crystal silicon batteries, above-mentioned high mechanical load crystal silicon battery
Preparation method includes the following steps：
(1) crystalline silicon battery plate is chosen, silicon chip surface is cleaned after making herbs into wool；
(2) silicon chip carries out phosphorus diffusion after cleaning；
(3) the P/N knots and phosphorosilicate glass formed after phosphorus diffusion is removed；
(4) passivating film is deposited in front side of silicon wafer, passivating film is deposited in silicon chip back side；
(5) lbg is overleaf carried out on passivating film；
(6) in silicon chip back side printed back electrode and back surface field；
(7) front electrode is printed in front side of silicon wafer, high mechanical load crystal silicon battery is formed after co-sintering.
The principle of the present invention is：
(1) backplate both ends and the design of back of the body electric field junction gap：Avoid in welding process welding overleaf electrode
End positions are due to welding position unbalance stress caused by the difference in height of backplate, back surface field lap position and backplate
It is even so as to cause hidden the phenomenon that splitting generation.
(2) backplate is changed to the sub- grid line of six segmentations or eight by the traditional sub- grid line of three-stage or the sub- grid line of four-part form
The sub- grid line design of segmentation：The multistage formula grid line design of backplate goes out the stress distribution generated in backplate sintering process
Go, reduce the influence of component stress in pressurized process, so as to reduce the fragment ratio in mechanical load test process with
And power attenuation percentage.
(3) overleaf electrode position disconnects design to lbg line：The introducing of PERC techniques obtains crystal silicon battery efficiency
It is promoted, but lbg increases the damage to silicon substrate, particularly overleaf electrode edge position, the damage of laser is more
It is the nucleation for exacerbating crackle, battery is caused to be easier brittle failure, therefore lbg line must overleaf electrode position disconnect.
Compared with prior art, the present invention has the following advantages：
(1) the high mechanical load crystal silicon battery in the present invention reduces the hidden generation split during components welding, so as to
Reduce assembly end fragment rate；
(2) the high mechanical load crystal silicon battery in the present invention does not need to add any auxiliary spare part, you can realizes PERC
Battery component terminal tool load test is qualified；
(3) preparation method of the high mechanical load crystal silicon battery in the present invention is simple for process, with existing producing line compatibility
It is good, it does not need to increase special link, commercial viability is strong, and large-scale promotion is suitble to use.
Description of the drawings
Fig. 1 is the back electrode structure schematic diagram of the polysilicon in the embodiment of the present invention 1；
Fig. 2 is the back electrode structure schematic diagram of the polysilicon in the embodiment of the present invention 2；
Fig. 3 is the backplate of the monocrystalline silicon in the embodiment of the present invention 3 and lbg cable architecture schematic diagram；
Fig. 4 is the backplate of the monocrystalline silicon in the embodiment of the present invention 4 and lbg cable architecture schematic diagram.
Specific embodiment
Being exemplified below specific embodiment, the present invention will be described：
Embodiment 1
As shown in Figure 1, high mechanical load crystal silicon battery provided in this embodiment, the backplate of crystal silicon battery is including more
The grid line 1 of parallel distribution is arranged, each column grid line includes six sections of sub- grid lines 2 separately set, the both ends of every a sub- grid line and institute
It states and gap 3 is equipped between back surface field.
Wherein crystal silicon cell uses p-type piece.
The preparation method of the high mechanical load crystal silicon battery, includes the following steps：
(1) resistivity is chosen in the p-type piece being lightly doped of 0.1~6 Ω cm, and silicon chip matrix is placed in wool-weaving machine
Prepared by middle progress damaging layer removal and matte, the chemical solution that making herbs into wool uses is hydrofluoric acid, nitric acid, hydrochloric acid and other conventional addition
One or more mixed aqueous solutions of agent.
(2) silicon chip surface is cleaned, is cleaned using chemical solution, chemical solution can be hydrofluoric acid, nitric acid,
One or more mixed aqueous solutions of hydrochloric acid and other conventional additives, scavenging period are 0.5~10 minute, and temperature is 20~30
℃。
(3) silicon chip is placed in 800~1000 DEG C of boiler tube and carries out phosphorus (P) diffusion, n-type diffusion is formed in silicon chip surface
Layer, silicon chip square resistance is 60~90 Ω/sq after diffusion.
(4) silicon chip after diffusion is placed in wet etching machine, the P/N that periphery is etched away using chemical solution is tied, simultaneously
Phosphorosilicate glass is removed, chemical solution can be the one or more of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other conventional additives
Mixed aqueous solution, etch period are 0.5~10 minute, and temperature is 5~20 DEG C.
(5) by the one or more of polysilicon chip front plating silica or silicon nitride after wet etching.
(6) back up silver backplate and Al-BSF, backplate six segmentations design (the i.e. back side using the present invention
Electrode includes the grid line 1 of the parallel setting of multiple row, and the sub- grid line 2 that each grid line is separately set by six sections forms), backplate
With the design of back surface field junction both ends leakage silicon (the i.e. both ends of every sub- grid line 2 of backplate and back surface field connection
Equipped with gap 3, the surface of silicon chip can be exposed, cause the disconnection of backplate and back surface field junction).
(7) front electrode grid line, sintering are printed.
As described in Table 1, according to examples detailed above the result shows that polycrystal silicon cell assembly end fragment rate declines more than 0.2%.
The performance comparison of 1 polycrystal silicon cell component manufactured in the present embodiment of table and conventional batteries component
| Cell piece component | It is broken to open box | Machine damages | EL is hidden to be split | It is total | Yield | Fragment rate |
| The present embodiment | 0 | 2 | 6 | 8 | 111 | 0.12% |
| Conventional batteries | 3 | 4 | 11 | 18 | 99 | 0.34% |
Embodiment 2
As schemed as different from Example 1, using p-type piece, backplate includes the parallel setting of multiple row
Grid line, the sub- grid line that each grid line is separately set by eight sections forms.
As shown in table 2, according to examples detailed above the result shows that polycrystal silicon cell assembly end fragment rate declines more than 0.2%.
The performance comparison of 2 polycrystal silicon cell component manufactured in the present embodiment of table and conventional batteries component
| Battery component | It is broken to open box | Machine damages | EL is hidden to be split | It is total | Yield | Fragment rate |
| The present embodiment | 1 | 2 | 3 | 6 | 130 | 0.08% |
| Conventional batteries | 1 | 4 | 10 | 15 | 80 | 0.31% |
Embodiment 3
As shown in figure 3, high mechanical load crystal silicon battery provided in this embodiment, the backplate of crystal silicon battery is including more
The grid line 1 of parallel distribution is arranged, each column grid line includes eight sections of sub- grid lines 2 separately set, the both ends of every a sub- grid line and institute
It states and gap 3 is equipped between back surface field.
The crystal silicon chip is p-type PERC monocrystalline silicon pieces.
The back side of the PERC crystal silicon batteries is equipped with passivating film, and passivating film is equipped with lbg line 4, and lbg line 4 exists
It is disconnected at backplate position.
Passivating film is preferably aluminium oxide and silicon nitride stack passivating film.
The preparation method of the high mechanical load crystal silicon battery, includes the following steps：
(1) resistivity is chosen in the p-type monocrystalline silicon piece being lightly doped of 0.1~6 Ω cm, and silicon chip matrix is placed in texturing slot
It is prepared by middle progress damaging layer removal and matte, in the sodium hydroxide deionized water solution for being 0.5~5% in mass percentage,
Surface-texturing, which is carried out, under conditions of being 75~90 DEG C in temperature forms suede structure；
(2) silicon chip surface is cleaned, is cleaned using chemical solution, chemical solution can be hydrofluoric acid, nitric acid,
One or more mixed aqueous solutions of hydrochloric acid and other conventional additives, scavenging period are 0.5~10 minute, and temperature is 20~30
℃；
(3) silicon chip is placed in 800~1000 DEG C of boiler tube and carries out phosphorus (P) diffusion, n-type diffusion is formed in silicon chip surface
Layer, silicon chip square resistance is 60-90 Ω/sq after diffusion；
(4) silicon chip after diffusion is placed in wet etching machine, the P/N that periphery is etched away using chemical solution is tied, simultaneously
Phosphorosilicate glass is removed, chemical solution can be the one or more of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other conventional additives
Mixed aqueous solution, etch period are 0.5~10 minute, and temperature is 5~20 DEG C；
(5) lbg technique, lbg will be carried out after silicon chip back side plating aluminium oxide and silicon nitride film after wet etching
Design is disconnected at graphic designs backplate position using the present invention；
(6) back up silver backplane and Al-BSF, back electrode eight segmentations design using the present invention, the connection of backplane back surface field
Locate the design of both ends leakage silicon (due to the back laminate of backside deposition herein passivation film aluminium oxide and silicon nitride, the surface exposed herein
It is the palletizing die)；
(7) print positive electrode grid line carries out optical attenuation processing after sintering by light decay processing equipment.
As shown in table 3, show according to the test result of above-mentioned design：PERC battery components terminal tool load test PL values by
More than 5% originally is reduced to 1% hereinafter, being determined as qualification：
The performance comparison of 3 polycrystal silicon cell component manufactured in the present embodiment of table and conventional batteries component
Embodiment 4
As shown in figure 4, as different from Example 3, each column grid line includes six sections of sub- grid lines separately set.According to upper
The test result for stating design shows：PERC battery components terminal tool load test PL values are reduced to 2% left side by original more than 6%
The right side is determined as qualification：
The performance comparison of 4 monocrystalline silicon battery component manufactured in the present embodiment of table and conventional batteries component
A part of specific embodiment is enumerated above, and the present invention will be described, it is necessary to it is indicated herein be more than it is specific real
It applies example and is served only for that the invention will be further described, do not represent limiting the scope of the invention.Other people are according to the present invention
Some the nonessential modifications and adjustment made still fall within protection scope of the present invention.
Claims (4)
1. a kind of high mechanical load crystal silicon battery, it is characterized in that：It is parallel that the backplate of the crystal silicon battery includes multiple row
The grid line of distribution, each column grid line include the six sections or eight sections sub- grid lines separately set, both ends and the back of the body of every sub- grid line
Gap is equipped between the electric field of face.
2. high mechanical load crystal silicon battery according to claim 1, it is characterized in that：The crystal silicon battery is brilliant for PERC
Silion cell.
3. high mechanical load crystal silicon battery according to claim 2, it is characterized in that：The back of the body of the PERC crystal silicon batteries
Face is equipped with passivating film, and the passivating film is equipped with lbg line, and the lbg line breaks at the backplate position
It opens.
4. high mechanical load crystal silicon battery according to claim 3, it is characterized in that：The passivating film for aluminium oxide and
Silicon nitride stack passivating film.
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| CN201711433307.0A CN108269863A (en) | 2017-12-26 | 2017-12-26 | A kind of high mechanical load crystal silicon battery |
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| CN201711433307.0A CN108269863A (en) | 2017-12-26 | 2017-12-26 | A kind of high mechanical load crystal silicon battery |
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| CN107039544A (en) * | 2017-03-03 | 2017-08-11 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
| CN107393995A (en) * | 2017-08-31 | 2017-11-24 | 常州天合光能有限公司 | A kind of photovoltaic interconnecting strip and photovoltaic cell component |
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