CN204375763U - The back electrode structure of solar cell - Google Patents
The back electrode structure of solar cell Download PDFInfo
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- CN204375763U CN204375763U CN201520076942.8U CN201520076942U CN204375763U CN 204375763 U CN204375763 U CN 204375763U CN 201520076942 U CN201520076942 U CN 201520076942U CN 204375763 U CN204375763 U CN 204375763U
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Abstract
The utility model discloses a kind of back electrode structure of solar cell, comprise back electrode and be located at a plurality of Stress Release portions on back electrode; Between the two ends up and down of described back electrode and back of the body electric field, there is gap; The left and right sides of described back electrode is provided with described Stress Release portion, and the length in each Stress Release portion is different.Between the two ends up and down of back electrode of the present utility model and back of the body electric field, there is gap, make not overlap between the two ends up and down of back electrode on welding bearing of trend and back of the body electric field, therefore there is not upper and lower overlapping regions, not only release stress, and avoid the problem of fragment in follow-up welding welding process.
Description
Technical field
The utility model relates to a kind of back electrode structure of solar cell, belongs to technical field of solar batteries.
Background technology
Conventional fossil fuel approach exhaustion day by day, in existing sustainable energy, solar energy is undoubtedly the most clean, the most general and most potential alternative energy source of one.Device of solar generating is also called solar cell or photovoltaic cell, solar energy can be directly changed into electric energy, and its electricity generating principle is the photovoltaic effect of based semiconductor PN junction.
In prior art, the back side of solar cell mainly comprises back of the body electric field and back electrode, and back electrode realizes the electrical connection between electric current collection and cell piece eventually through welding.Owing to carrying on the back electric field, back electrode is different with the material of silicon substrate, therefore can there is stress between three; For above-mentioned technical problem, adopt and arrange a plurality of Stress Release portion in the surrounding up and down of back electrode in prior art, shown in accompanying drawing 1, described Stress Release portion is triangular in shape, is fitly located at the surrounding up and down of back electrode; Described Stress Release portion overlaps with back of the body electric field.
But, find in practical application, there are the following problems for above-mentioned back electrode structure: (1) is owing to existing certain difference in height between back of the body electric field and back electrode, therefore also there is difference in height between the Stress Release portion of above-mentioned back electrode and back electrode, especially, on welding bearing of trend, this just result in the situation occurring fragment in follow-up welding welding process; (2) for the Stress Release portion of the back electrode left and right sides, because back of the body electric field, the coefficient of expansion between back electrode and silicon substrate are different, a large amount of stress can be produced when expanding with heat and contract with cold, and the structure in existing Stress Release portion is all the repetitive (such as accompanying drawing 1 is all the little three-legged structure of repetition) that length is identical, stress is concentrated on same straight line, causes Stress superposition, finally cause Stress Release portion to produce be full of cracks, form electrode isolated island, have impact on electric current collection.
Therefore, how appropriate design back electrode structure, makes it avoid the situation of fragment and the be full of cracks of Stress Release portion, has become this area to be badly in need of one of technical barrier solved.
Summary of the invention
Goal of the invention of the present utility model is to provide a kind of back electrode structure of solar cell.
To achieve the above object of the invention, the technical solution adopted in the utility model is: a kind of back electrode structure of solar cell, comprises back electrode and is located at a plurality of Stress Release portions on back electrode, and Stress Release portion overlaps with back of the body electric field; Between the two ends up and down of described back electrode and back of the body electric field, there is gap;
The left and right sides of described back electrode is provided with described Stress Release portion, and the length in each Stress Release portion is different.
Above, between the two ends up and down of described back electrode and back of the body electric field, there is gap, refer on welding bearing of trend, two ends up and down and the back of the body electric field separates of back electrode.Namely be above-below direction at welding bearing of trend.
The length in each Stress Release portion described is different, and refer to that the top in Stress Release portion is different from the spacing length between back electrode, it can be sequential grading structure, also can be mixed and disorderly disordered structure.
Preferably, the Stress Release portion of the described back electrode left and right sides is grading structure.
Preferred further, the Stress Release portion of the described back electrode left and right sides is laterally zygomorphic grading structure.
Preferred further, the Stress Release portion of the described back electrode left and right sides is waveform grading structure or fold-line-shaped grading structure.
In technique scheme, the gap between the upper and lower two ends of described back electrode and back of the body electric field is less than or equal to 1 mm.
In technique scheme, the width in the Stress Release portion of the described back electrode left and right sides is less than or equal to 1 mm.
In technique scheme, described back electrode is segmental structure.
Preferably, described back electrode is staggered structure.
In technique scheme, described back electrode is continuous structure.
Because technique scheme is used, the utility model compared with prior art has following advantages:
1, the utility model develops a kind of back electrode structure of new solar cell, between the two ends up and down of back electrode and back of the body electric field, there is gap, make not overlap between the two ends up and down of back electrode on welding bearing of trend and back of the body electric field, therefore there is not upper and lower overlapping regions, not only release stress, and avoid the problem of fragment in follow-up welding welding process;
2, Stress Release portion is arranged on the left and right sides of back electrode by the utility model, and the length in each Stress Release portion is different, thus avoids stress superposition and cause be full of cracks to form the problem of electrode isolated island; Especially, when Stress Release portion is laterally zygomorphic grading structure, the stress that each Stress Release portion produces can stagger counteracting mutually, thus thoroughly solves the problem of Stress superposition;
3, structure of the present utility model is simple, is easy to realize, and is suitable for applying.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the back electrode structure of existing solar cell in background technology.
Fig. 2 is the schematic diagram of the utility model embodiment one.
Fig. 3 is the schematic diagram of the utility model embodiment two.
Fig. 4 is the schematic diagram of the utility model embodiment three.
Wherein: 1, back electrode; 2, Stress Release portion; 3, gap.
Embodiment
Below in conjunction with embodiment, the utility model is further described.
Embodiment one
Shown in Figure 2, a kind of back electrode structure of solar cell, a plurality of Stress Release portions 2 comprising back electrode 1 and be located on back electrode, Stress Release portion overlaps with back of the body electric field; Between the two ends up and down of described back electrode and back of the body electric field, there is gap 3;
The left and right sides of described back electrode is provided with described Stress Release portion, and the length in each Stress Release portion is different.The Stress Release portion of the described back electrode left and right sides is laterally zygomorphic grading structure.Stress Release portion is triangle.Shown in Figure 2.
Gap between the upper and lower two ends of described back electrode and back of the body electric field is less than or equal to 1 mm.The width in the Stress Release portion of the described back electrode left and right sides is identical, is 0.8 mm.
Embodiment two
Shown in Figure 3, a kind of back electrode structure of solar cell, comprises back electrode and is located at a plurality of Stress Release portions on back electrode, and Stress Release portion overlaps with back of the body electric field; Between the two ends up and down of described back electrode and back of the body electric field, there is gap; Gap between the upper and lower two ends of described back electrode and back of the body electric field is less than or equal to 1 mm.
The left and right sides of described back electrode is provided with described Stress Release portion, and the length in each Stress Release portion is different.The Stress Release portion of the described back electrode left and right sides is laterally zygomorphic grading structure.Stress Release portion is rectangle.Shown in Figure 3.
Embodiment three
Shown in Figure 4, a kind of back electrode structure of solar cell, comprises back electrode and is located at a plurality of Stress Release portions on back electrode, and Stress Release portion overlaps with back of the body electric field; Between the two ends up and down of described back electrode and back of the body electric field, there is gap; Gap between the upper and lower two ends of described back electrode and back of the body electric field is less than or equal to 1 mm.
The left and right sides of described back electrode is provided with described Stress Release portion, and the length in each Stress Release portion is different.The Stress Release portion of the described back electrode left and right sides is waveform grading structure.
Claims (9)
1. a back electrode structure for solar cell, comprises back electrode (1) and is located at a plurality of Stress Release portions (2) on back electrode, and Stress Release portion overlaps with back of the body electric field; It is characterized in that: between the two ends up and down of described back electrode and back of the body electric field, there is gap (3);
The left and right sides of described back electrode is provided with described Stress Release portion, and the length in each Stress Release portion is different.
2. the back electrode structure of solar cell according to claim 1, is characterized in that: the Stress Release portion of the described back electrode left and right sides is grading structure.
3. the back electrode structure of solar cell according to claim 2, is characterized in that: the Stress Release portion of the described back electrode left and right sides is laterally zygomorphic grading structure.
4. the back electrode structure of solar cell according to claim 2, is characterized in that: the Stress Release portion of the described back electrode left and right sides is waveform grading structure or fold-line-shaped grading structure.
5. the back electrode structure of solar cell according to claim 1, is characterized in that: the gap between the upper and lower two ends of described back electrode and back of the body electric field is less than or equal to 1 mm.
6. the back electrode structure of solar cell according to claim 1, is characterized in that: the width in the Stress Release portion of the described back electrode left and right sides is less than or equal to 1 mm.
7. the back electrode structure of solar cell according to claim 1, is characterized in that: described back electrode is segmental structure.
8. the back electrode structure of solar cell according to claim 7, is characterized in that: described back electrode is staggered structure.
9. the back electrode structure of solar cell according to claim 1, is characterized in that: described back electrode is continuous structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520076942.8U CN204375763U (en) | 2015-02-04 | 2015-02-04 | The back electrode structure of solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520076942.8U CN204375763U (en) | 2015-02-04 | 2015-02-04 | The back electrode structure of solar cell |
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| CN204375763U true CN204375763U (en) | 2015-06-03 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107636842A (en) * | 2017-05-31 | 2018-01-26 | 通威太阳能（合肥）有限公司 | A kind of cell piece backside structure for reducing solar cell module fragment rate |
| CN108269863A (en) * | 2017-12-26 | 2018-07-10 | 晶澳太阳能有限公司 | A kind of high mechanical load crystal silicon battery |
| CN108511536A (en) * | 2018-06-07 | 2018-09-07 | 通威太阳能（安徽）有限公司 | A kind of back of the body passivation crystal-silicon battery slice backside laser notching construction |
| CN111370503A (en) * | 2018-12-25 | 2020-07-03 | 苏州阿特斯阳光电力科技有限公司 | Solar cell and solar cell module |
-
2015
- 2015-02-04 CN CN201520076942.8U patent/CN204375763U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107636842A (en) * | 2017-05-31 | 2018-01-26 | 通威太阳能（合肥）有限公司 | A kind of cell piece backside structure for reducing solar cell module fragment rate |
| CN108269863A (en) * | 2017-12-26 | 2018-07-10 | 晶澳太阳能有限公司 | A kind of high mechanical load crystal silicon battery |
| CN108511536A (en) * | 2018-06-07 | 2018-09-07 | 通威太阳能（安徽）有限公司 | A kind of back of the body passivation crystal-silicon battery slice backside laser notching construction |
| CN111370503A (en) * | 2018-12-25 | 2020-07-03 | 苏州阿特斯阳光电力科技有限公司 | Solar cell and solar cell module |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Funing atlas sunshine Power Technology Co., Ltd Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI-GCL SOLAR MANUFACTURING (YANCHENG) Co.,Ltd. |
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| CP03 | Change of name, title or address |