CN108511536A - A kind of back of the body passivation crystal-silicon battery slice backside laser notching construction - Google Patents
A kind of back of the body passivation crystal-silicon battery slice backside laser notching construction Download PDFInfo
- Publication number
- CN108511536A CN108511536A CN201810578102.XA CN201810578102A CN108511536A CN 108511536 A CN108511536 A CN 108511536A CN 201810578102 A CN201810578102 A CN 201810578102A CN 108511536 A CN108511536 A CN 108511536A
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- China
- Prior art keywords
- laser
- hollow out
- line
- laser slotting
- slotting line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 29
- 239000010703 silicon Substances 0.000 title claims abstract description 29
- 238000010276 construction Methods 0.000 title claims abstract description 23
- 238000002161 passivation Methods 0.000 title abstract description 15
- 241000258920 Chilopoda Species 0.000 claims abstract description 8
- 238000012360 testing method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of back ofs the body to be passivated crystal-silicon battery slice backside laser notching construction, including cell piece, the cell piece includes laser slotting line and the non-slotted area of laser, multiple hollow outs are offered on the cell piece, it is provided with electrode in the hollow out, centipede foot is provided on the electrode, the laser slotting line is parallel to hollow out and laser slotting line does not contact hollow out, the left and right ends of the hollow out are away from adjacent nearest laser slotting line 0.2mm 1.5mm, and the upper and lower ends of the hollow out are away from adjacent nearest laser slotting line 0.2mm 1.5mm.The present invention provides the back ofs the body to be passivated crystal-silicon battery slice backside laser notching construction, in hollow part where electrode and adjacent nearest laser slotting line within the scope of the restriction away from distance, the decay power of battery component and hidden sliver number can be effectively reduced, the mechanical load capability of back of the body passivation crystal-silicon battery slice is improved.
Description
Technical field
The present invention relates to crystal-silicon battery slice technical field, specially a kind of back of the body passivation crystal-silicon battery slice backside laser fluting knot
Structure.
Background technology
With the continuous development of crystalline silicon technologies, the expansion of manufacture of solar cells scale and the continuous drop of battery price
It is low, it reduces production cost, improve the emphasis that efficiency is battery technology development.Back of the body passivation cell is because more conventional battery puies forward effect at present
It is obviously widely used, by existing cell piece production process, overleaf plating last layer alumina flake and SiNx
Layer, it is compound to reduce the few son in the back side, improve open-circuit voltage；Again by laser slotting, the silicon base at fluting is made to expose, printed
Aluminium paste and silicon base is set to contact, to improve the efficiency of cell piece.But for silicon chip, backside laser cutting can
The crystal structure at the back side can be caused to be destroyed, back of the body passivation crystal-silicon battery slice is caused by positive and negative metal structure difference
The warpage of 2mm-5mm, under the synergy of warping stress and damage from laser, the hidden of back of the body passivation crystal-silicon battery slice splits or is crushed
Risk will significantly improve.
Common back of the body passivation crystal-silicon battery slice backside laser notching construction is slotted line and the parallel structure of hollow out at present,
Such as Figure of description 1；Or slotted line and the perpendicular structure of hollow out, such as Figure of description 2, but due to the structure laser slotting
Line directly runs through entire silicon chip back side, and there is also laser slotting lines below the back electrode of cell piece so that back of the body passivation crystal silicon electricity
Pond piece will appear when carrying out mechanical load test to be compared the hidden of multi-disc and splits situation, causes module testing unqualified, and observation is found
It is main it is hidden split the position for being happened at electrode hollow out, the reason is that laser slotting line is more close to the endpoint of back electrode, especially swash
Light slotted line and the perpendicular situation of hollow part electrode, it is therefore desirable to the laser slotting structure at the cell piece back side is improved,
To improve the mechanical load capability for carrying on the back passivation crystal-silicon battery slice.
In the prior art, application No. is a kind of emitter of " 201720515816.7 " and passivating back solar battery sheets
The laser slotting structure of laser slotting structure, solar battery sheet is made of laser slotting line and the non-slotted area of laser, feature
It is that the laser slotting line disconnects at back electrode, forms the non-slotted box of laser around back electrode, back electrode region is not opened
Slot, the thermal stress in components welding suffered by cell back electrode will not concentrate release in laser slotting injury region, to reduce
Components welding fragment rate.
But above structure still has apparent defect：Laser slotting line is slotted always to hollow part, close to back electrode
The endpoint of place hollow part is more, causes hollow out periphery laser slotting overweight, and observes and find that battery product are main and hidden split generation
In the position of electrode hollow out, above structure cannot still effectively improve this phenomenon.
Invention content
The purpose of the present invention is to provide a kind of back ofs the body to be passivated crystal-silicon battery slice backside laser notching construction, to solve the above-mentioned back of the body
The problem of being proposed in scape technology.
To achieve the above object, the present invention provides the following technical solutions：
A kind of back of the body passivation crystal-silicon battery slice backside laser notching construction, including cell piece, the cell piece include that laser is opened
The line of rabbet joint and laser non-slotted area offer multiple hollow outs on the cell piece, are provided with electrode in the hollow out, on the electrode
It is provided with centipede foot, the laser slotting line is parallel to hollow out and laser slotting line does not contact hollow out, the left and right two of the hollow out
End is away from adjacent nearest laser slotting line 0.2mm-1.5mm, and the upper and lower ends of the hollow out are away from adjacent nearest laser slotting line
0.2mm-1.5mm。
Preferably, the line width of the laser slotting line is 20um-70um.
Preferably, the laser slotting line is mutually parallel between a plurality of and adjacent two laser slotting lines and is spaced phase
Together, the spacing of adjacent two laser slotting lines is 0.5mm-1.5mm.
Preferably, the gross area of the laser slotting line accounts for the 1%-5% of cell piece surface area.
Preferably, the size of the hollow out is more than the size of electrode and centipede foot.
Compared with prior art, the beneficial effects of the invention are as follows：
Laser slotting line is parallel to hollow out and laser slotting line does not contact hollow out, avoids slotted line from reaching hollow part always and leads
It is overweight to send a telegraph pole hollow out position fluting, be easy to happen it is hidden split, effectively improve the mechanical load capability of back of the body passivation crystal-silicon battery slice, it is real
Number is tested it was demonstrated that using such notching construction that the decaying of cell piece component power can be made to be no more than 3.8%, hidden sliver number does not surpass
8 are crossed, mechanical load test request can be met.
The present invention provides the back of the body be passivated crystal-silicon battery slice backside laser notching construction, where electrode hollow part and it is adjacent most
Nearly laser slotting line within the scope of the restriction away from distance, the decay power of battery component and hidden sliver number can be effectively reduced, carried
Highback is passivated the mechanical load capability of crystal-silicon battery slice.
Description of the drawings
Fig. 1 is laser slotting line and the parallel notching construction schematic diagram of hollow out in the prior art；
Fig. 2 is laser slotting line and the perpendicular notching construction schematic diagram of hollow out in the prior art；
Fig. 3 is the cell piece structure chart of the present invention；
Fig. 4 is the relative position schematic diagram of the laser slotting line position and hollow out, electrode of the present invention.
In figure：1 cell piece, 2 laser slotting lines, the non-slotted area of 3 laser, 4 hollow outs, 5 electrodes, 6 centipede feet.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
- 4 are please referred to Fig.1, the present invention provides a kind of technical solution：
A kind of back of the body passivation crystal-silicon battery slice backside laser notching construction, including cell piece 1, cell piece 1 include laser slotting
Line 2 and laser non-slotted area 3 offer multiple hollow outs 4 on cell piece 1, electrode 5 are provided in hollow out 4, is provided on electrode 5
Centipede foot 6, laser slotting line 2 is parallel to hollow out 4 and laser slotting line 2 does not contact hollow out 4, and the left and right ends of hollow out 4 are away from adjacent
Nearest laser slotting line 2 is 0.2mm-1.5mm, and the upper and lower ends of hollow out 4 are 0.2mm- away from adjacent nearest laser slotting line 2
1.5mm, in this case, the component power decaying of cell piece are no more than 3.8%, and hidden sliver number is no more than 8, module testing
Qualification can cause component power decaying to be more than 3.8%, hidden sliver number is more than 8, component machinery if being less than above range lower limit
Load test is unqualified；If being more than the above range upper limit, cell piece efficiency can be reduced, component power is caused to reduce.
Preferably as one, the line width of laser slotting line 2 is 20um-70um.
Preferably as one, laser slotting line 2 is mutually parallel and is spaced between a plurality of and adjacent two laser slotting lines 2
Identical, the spacing of adjacent two laser slotting lines 2 is 0.5mm-1.5mm.
Preferably as one, the gross area of laser slotting line 2 accounts for the 1%-5% of 1 surface area of cell piece, if laser slotting line
2 gross area is relatively low, and aluminium paste silicon base layer can not contact well, and photogenerated current is caused to have prodigious resistance in transmission process,
So that efficiency reduces；If the gross area of laser slotting line 2 is larger, the effect of alumina layer passivation will weaken so that open circuit
Voltage is not obviously improved, and also results in efficiency reduction, therefore consider and limited using above range.
Preferably as one, the size of hollow out 4 is more than the size of electrode 5 and centipede foot 6.
Contrast experiment：
Same size dimension and the cell piece of parameter are selected, Figure of description 1 and attached tradition electricity shown in Fig. 2 is respectively adopted
Pond backside laser notching construction and the cell backside laser notch as shown in Figure of description 4 of the present invention are compared,
The test of cell piece component mechanical load is carried out, test data is as shown in table 1 below：
Table 1
| Project | Decay power (%) | Hidden sliver number (piece) | Mechanical load is tested |
| Traditional notching construction | 5.0 | 10 | It is unqualified |
| Notching construction of the present invention | 3.8 | 8 | It is qualified |
It can be obtained according to the data in table 1, cell piece back side laser slotting structure of the invention, be swashed compared to traditional back side
Light notching construction reduces by 1.2% on the decay power of component；On hidden sliver number, 20% is reduced.
Compared with traditional backside laser notching construction, the back of the body of the invention passivation crystal-silicon battery slice backside laser notching construction is adopted
With laser slotting line and the discontiguous design of hollow out, avoids the fluting line endpoints that hollow out where back electrode goes out more, lead to hollow out
The fluting at place is overweight, within the scope of above-mentioned hollow out and adjacent nearest laser slotting line distance, can have and effectively subtract
The decay power and hidden sliver number of few component, improve the mechanical load of cell piece.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (5)
1. a kind of back of the body is passivated crystal-silicon battery slice backside laser notching construction, including cell piece (1), it is characterised in that：The battery
Piece (1) includes laser slotting line (2) and the non-slotted area of laser (3), and multiple hollow outs (4) are offered on the cell piece (1), described
It is provided with electrode (5) in hollow out (4), centipede foot (6) is provided on the electrode (5), the laser slotting line (2), which is parallel to, engraves
Empty (4) and laser slotting line (2) does not contact hollow out (4), and the left and right ends of the hollow out (4) are away from adjacent nearest laser slotting line
(2) 0.2mm-1.5mm, the upper and lower ends of the hollow out (4) are away from adjacent nearest laser slotting line (2) 0.2mm-1.5mm.
2. a kind of back of the body according to claim 1 is passivated crystal-silicon battery slice backside laser notching construction, it is characterised in that：It is described
The line width of laser slotting line (2) is 20um-70um.
3. a kind of back of the body according to claim 1 is passivated crystal-silicon battery slice backside laser notching construction, it is characterised in that：It is described
Laser slotting line (2) be mutually parallel and be spaced between a plurality of and adjacent two laser slotting lines (2) it is identical, described adjacent two
The spacing of laser slotting line (2) is 0.5mm-1.5mm.
4. a kind of back of the body according to claim 1 is passivated crystal-silicon battery slice backside laser notching construction, it is characterised in that：It is described
The gross area of laser slotting line (2) accounts for the 1%-5% of cell piece (1) surface area.
5. a kind of back of the body according to claim 1 is passivated crystal-silicon battery slice backside laser notching construction, it is characterised in that：It is described
The size of hollow out (4) is more than the size of electrode (5) and centipede foot (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810578102.XA CN108511536A (en) | 2018-06-07 | 2018-06-07 | A kind of back of the body passivation crystal-silicon battery slice backside laser notching construction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810578102.XA CN108511536A (en) | 2018-06-07 | 2018-06-07 | A kind of back of the body passivation crystal-silicon battery slice backside laser notching construction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108511536A true CN108511536A (en) | 2018-09-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810578102.XA Pending CN108511536A (en) | 2018-06-07 | 2018-06-07 | A kind of back of the body passivation crystal-silicon battery slice backside laser notching construction |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021098295A1 (en) * | 2019-11-20 | 2021-05-27 | 通威太阳能（成都）有限公司 | Screen printing plate structure of monocrystalline silicon solar cell |
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