CN110364578A - Method and system of the preparation for the solar battery sheet of PERC imbrication component - Google Patents
Method and system of the preparation for the solar battery sheet of PERC imbrication component Download PDFInfo
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- CN110364578A CN110364578A CN201810313101.2A CN201810313101A CN110364578A CN 110364578 A CN110364578 A CN 110364578A CN 201810313101 A CN201810313101 A CN 201810313101A CN 110364578 A CN110364578 A CN 110364578A
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- Prior art keywords
- silicon wafer
- solar battery
- battery sheet
- film
- perc
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Classifications
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- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
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- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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Abstract
The present invention relates to a kind of methods for preparing the solar battery sheet for PERC imbrication component, comprising the following steps: provides silicon wafer step, provides silicon wafer as the raw material for preparing solar battery sheet；Diffusion step forms the interface of N-type semiconductor and P-type semiconductor, i.e. PN junction on silicon wafer；Passivation step is carried on the back, applies one layer of back passivating film at the back side of silicon wafer；Back protection film step is plated, layer protecting film is deposited on back passivating film by PECVD method；Laser grooving step is slotted by being laser-ablated in back passivating film and back protection film, exposes silicon wafer；Screen printing step, wherein carry out silk-screen printing using front of the Precious Metal to silicon wafer, obtain main gate line and secondary grid line；Silk-screen printing is carried out using only the back side of the aluminium paste to silicon wafer, realizes the Al-BSF covering of solar battery sheet；And Fast Sintering step, Ohmic contact is formed, can collect and externally conduct photo-generated carrier.The invention further relates to the solar battery sheets for PERC imbrication component.
Description
Technical field
The invention mainly relates to the imbrication component application fields of solar battery, prepare more particularly to a kind of for PERC
The method of the solar battery sheet of imbrication component.The invention further relates to a kind of methods for preparing PERC imbrication component.In addition, this hair
It is bright to be related to a kind of solar battery sheet for PERC imbrication component and a kind of PERC imbrication component.Moreover, it relates to one
The system that kind prepares the solar battery sheet for PERC imbrication component.
Background technique
Depletion rate with the conventional fossil energy such as worldwide coal, petroleum, natural gas is accelerated, and ecological environment is constantly disliked
Change, especially greenhouse gas emission leads to increasingly serious Global climate change, and the sustainable development of human society has been subjected to
It seriously threatens.Respective energy development strategy is formulated in countries in the world one after another, with cope with conventional fossil energy resources finiteness and
Develop and use bring environmental problem.Solar power generation relies on its reliability, safety, popularity, longevity, the feature of environmental protection, money
The characteristics of source adequacy, has become one of most important renewable energy, is expected to become the main branch of the following global power supply
Column generally includes mainly wherein used device of solar generating is also referred to as photovoltaic power generation apparatus by multiple solar energy
The solar components or photovoltaic module that cell piece is composed, solar battery sheet be based on itself semiconductor photovoltaic effect and
Electric energy can be converted solar energy into.
Widely popularize and background using solar energy green energy resource under, solar battery sheet can in a manner of imbrication structure
At the solar battery of imbrication kit form, using low current low-loss electrical principles, (photovoltaic module power is lost one side
With square direct proportionality of operating current) so that the resistance loss of entire component substantially reduces.On the other hand pass through
It makes full use of the gap area of solar battery sheet in component to generate electricity, improves the energy density of unit area.In addition
Using conductive adhesive instead of the photovoltaic welding belt applied in the solar battery of conventionally form, since photovoltaic welding belt is in full wafer electricity
Show higher resistance in pond and resistance that conductive adhesive forms circuit will be much smaller than the mode using welding, so that comparing
It is higher in the transfer efficiency of the solar battery of conventionally form, the solar battery of imbrication kit form, outdoor application reliability
It is more excellent.Such as the low current and the characteristics such as parallel circuit of imbrication component drop hot spot effect significantly to the harm of component
It is low.
The manufacturing process of solar battery sheet used in current imbrication component and conventional solar battery sheet are essentially identical,
Difference is the solar battery sheet for imbrication component to be suitble to laser cutting and interconnection to each other to cell piece front
Design is optimized with back side grid line figure.It is required according to imbrication packaging technology, imbrication solar battery sheet remains front
Main gate line with the back side is for additional conductive glue coating solidification bonding, and wherein interconnection technology is welded by conventional photovoltaic welding by high temperature
Connect melting adhered be changed in front main grid line and back side main gate line through conductive adhesive interconnection front main grid line and the back side
Main gate line.I.e. the cell piece of imbrication component is identical as the conventional basic structure of solar battery sheet, and the position of main gate line, figure
Or shape has differences.
In addition, with the development of science and technology, there is PERC battery (Passivated Emitter in area of solar cell
And Rear Cell, i.e. passivation emitter and back side battery), core is to be covered in the shady face of silicon wafer with di-aluminium trioxide film
Lid to play the role of passivated surface (passivating film), can effectively sinking low back surface it is compound, improve open-circuit voltage, increase back table
Face reflection, improves short circuit current, to promote the transfer efficiency of battery.Silicon oxide film can also be covered on di-aluminium trioxide film
(5~100 nanometers) can then be printed on silicon oxide film again or be deposited a small amount of conductive material (such as aluminum back electric field),
In in di-aluminium trioxide film and silicon nitride film have fluting, the fluting across the back side silicon nitride film and backside oxide aluminium film,
Aluminum back electric field is enabled to form localized contact with silicon wafer.
It combines PERC battery with the design of imbrication component, the cell piece of resulting PERC imbrication component is generally in positive mask
There are several front main grid lines, overleaf also there is other than the main gate line of the back side di-aluminium trioxide film being coated on silicon wafer, nitrogen
SiClx film and back electric field.On the other hand, the main purpose that the main grid line graph of the cell piece of imbrication component is changed be in order to
Whole piece cell piece is cut into the baby battery piece of several equal portions in follow-up process.Each baby battery piece front and back is respectively protected
A main gate line for staying baby battery piece edges at two ends position after being located at cutting interconnects to ensure maximum for imbrication technique
Light-receiving area and interconnection adhesive strength.
Precious Metal, such as metal silver paste are generallyd use for front main grid line and back side main gate line to realize.Normal
Advise the interconnection for realizing cell piece in the packaging technology of component in a manner of photovoltaic welding belt high-temperature soldering: the front by silver paste preparation is main
Grid line and back side main gate line auxiliary photovoltaic welding belt high-temperature fusion are bonded photovoltaic cell, to complete to be electrically connected, wherein metallic silver is
Realize that conventional solar battery sheet component string sealing fills essential primary raw material.Back side master is completed applying Precious Metal
Grid line printing and then application aluminium paste carry out the printing of back aluminium field, to form back aluminium field.In the processing procedure of conventional imbrication component
Ablation is utilized laser to the solar battery sheet of full wafer, wherein after cutting using conductive adhesive coating lamination process
Baby battery piece front and back positive and negative anodes interconnection, general connection type be in the positive front main grid line of baby battery piece as cathode
It is connected by conductive adhesive with the back side main gate line at the baby battery piece back side as anode.However, this connection type
In lacked due to the main gate line part Al-BSF at the back side, photo-generated carrier recombination rate is high, in addition the back of Al-BSF and silver paste preparation
Contact resistance between the main gate line of face can bring the loss in efficiency of solar battery sheet.
Particle, glass of the above-mentioned silver paste for being used to prepare front main grid line for battery piece and back side main gate line mainly by metallic silver
A kind of thick slurry of mixture composed by glass powder, organic solvent, in preparation, silver paste cost accounts for solar battery sheet
50% or more of non-silicon cost.It is every to be increased every year with the speed for being more than 30% since photovoltaic industry scale is expanding year by year.Its
Middle photovoltaic cell is more than tens billion of outputs, largely consumes Precious Metal thus, directly results in the increase of production cost, for
Degree electricity cost (LCOE) decline of entire industry is unfavorable.Noble metal silver powder needs to be mentioned by the method for physics and chemistry simultaneously
Refining, production process need to consume a large amount of energy and generate pollution to environment, and personnel's Long Term Contact heavy metal is also unfavorable for body
Health.
Therefore, there is an urgent need to be modified to the preparation method of the solar battery sheet of PERC imbrication component solar battery sheet
With the solar battery sheet for PERC imbrication component.
Summary of the invention
The present invention proposes that a kind of method for preparing the solar battery sheet for PERC imbrication component, a kind of to prepare PERC folded
It is the method for watt component, a kind of for the solar battery sheet of PERC imbrication component and a kind of PERC imbrication component and a kind of system
The system for being ready for use on the solar battery sheet of PERC imbrication component electricity, can effectively improve solar-electricity in PERC imbrication component
The transfer efficiency of pond piece and the use for reducing Precious Metal in preparation, while can satisfy the normal envelope of PERC imbrication component
Dress does not influence its processing procedure.In addition, according to the present invention it is possible to promoting solar-electricity while reducing the dosage of Precious Metal
Pond piece component output power, to finally reduction degree electricity cost LCOE and realize photovoltaic cheap internet access.
Central scope of the invention is, still retains main gate line in the front of solar battery sheet, but preparing solar energy
Directly complete the printing at the back side of solar battery sheet in the silkscreen process of cell piece with aluminium paste by the design of optimization back surface field,
The back side of solar battery sheet obtained does not include noble metal main gate line, only has Al-BSF.
The present invention uses preparation by providing the method for solar battery sheet of the unique preparation for PERC imbrication component
One of back side main gate line of silk-screen printing (such as uses metallic silver in the conventional method of the solar battery sheet of PERC imbrication component
Slurry) and republish one of back aluminium field and optimize integration, it directly eliminates and main gate line is carried out with Precious Metal to the back side
Printing, as a result, using solar battery sheet according to the present invention manufacture PERC imbrication component when, solar battery sheet is just
Face main gate line is directly connect with the Al-BSF at the back side, thus by saving the main grid for using Precious Metal to print in silicon chip back side
Line reduces possible power loss, and the conduction between solar battery sheet is enhanced while reducing production cost
Efficiency.
The method of solar battery sheet of the preparation according to the present invention for PERC imbrication component, comprising the following steps:
Silicon wafer step is provided, provides silicon wafer as the raw material for preparing solar battery sheet；
Diffusion step forms the interface of N-type semiconductor and P-type semiconductor, i.e. PN junction in silicon wafer；
Passivation step is carried on the back, one layer of back passivating film is applied at the back side of silicon wafer by PECVD ALD technique；
Back protection film step is plated, layer protecting film is deposited on back passivating film by PECVD method；
Laser grooving step is slotted by being laser-ablated in back passivating film and back protection film, exposes silicon wafer；
Screen printing step, wherein carry out silk-screen printing using front of the Precious Metal to silicon wafer, obtain main gate line
With secondary grid line；Silk-screen printing is carried out using only the back side of the aluminium paste to silicon wafer, realizes the Al-BSF covering of solar battery sheet；And
Fast Sintering step forms Ohmic contact, can collect and externally conduct photo-generated carrier.
A preferred embodiment of the invention executes surface wool manufacturing step after providing silicon wafer step, uses
Chemical reagent obtains suede structure on the surface of silicon wafer.Preferably, cleaning step is executed after surface wool manufacturing step, for
Remaining chemical reagent is cleaned in making herbs into wool step.
A preferred embodiment of the invention executes plasma etching step after diffusion step, leads to
It crosses plasma etching and edge PN junction is etched into removal；And/or polishing step is executed after plasma etching step, by silicon wafer
Surface polishing；And/or executed after diffusion step and go phosphorosilicate glass step, it is being spread by chemical corrosion method removal
The phosphorosilicate glass formed in system knot step on the surface of silicon wafer；And/or low-temperature annealing step is executed after going phosphorosilicate glass step
Suddenly, to restore in silicon wafer as the lattice defect caused by the high temperature in diffusion step；And/or in plating back protection film step
Coated with antireflection film step is executed later, deposits one or more layers antireflective coating in the front of silicon wafer.
Preferably, light injection or electrical pumping process can be executed after Fast Sintering step, it is thus electric to reduce imbrication
The optical attenuation in pond.
A preferred embodiment of the invention, Precious Metal are metal silver pastes, the metal silver paste be by
The thick slurry for the mixture that particle, glass powder, the organic solvent of metallic silver form.A kind of preferred reality according to the present invention
Mode is applied, aluminium paste is the thick slurry of the mixture as composed by the particle, glass powder, organic solvent of metallic aluminium.
A preferred embodiment of the invention, in screen printing step, the back side of silicon wafer it is reserved one or
Multiple cutting seams.
A preferred embodiment of the invention, back passivating film are di-aluminium trioxide films, and back protection film is nitridation
Silicon fiml.
The method according to the present invention for preparing PERC imbrication component, includes the following steps,
The method of solar battery sheet according to aforementioned preparation for PERC imbrication component prepares solar battery sheet；
Solar battery sheet is cut and is separated into multiple baby battery pieces；
Each baby battery piece with imbricated way arrangement and realizes mutual connection between each other with conductive adhesive；And
Encapsulation.
Particularly, back side main gate line can be reserved using cauda in the endlap piece preparation link of PERC imbrication component and applied
Tin copper strips pass through high-temperature soldering after individually lamination bunchiness confluence draw, or directly adopt conductive adhesive directly will apply tin copper strips with
Al-BSF carries out effectively bonding and lamination bunchiness confluence is drawn.
A preferred embodiment of the invention carries out the test of efficiency stepping to solar battery sheet.
The front of solar battery sheet according to the present invention includes that the more main gate lines being spaced apart and Duo Gen are spaced apart
Secondary grid line, main gate line and secondary grid line are formed by Precious Metal, and the back side of solar battery sheet includes back passivating film, back
Surface protective film, the fluting through the back passivating film and the back protection film and the almost covering that is formed by aluminium paste are entire
The Al-BSF at the back side, wherein the back side of solar battery sheet does not have the main gate line formed by Precious Metal.
PERC imbrication component according to the present invention is made of solar battery sheet as described above.
On the other hand, a kind of system for preparing the solar battery sheet for PERC imbrication component is proposed comprising:
Silicon wafer provides device, provides silicon wafer as the raw material for preparing solar battery sheet；
Diffusion device forms the interface of N-type semiconductor and P-type semiconductor, i.e. PN junction in silicon wafer；
Passivating device is carried on the back, passes through PECVD ALD technique in one layer of back passivating film of backside deposition of silicon wafer；
Back-protective film device is plated, layer protecting film is deposited on back passivating film by pecvd process；
Laser grooving device is slotted by being laser-ablated in back passivating film and back protection film, exposes silicon wafer；
Silk-screen printing device carries out silk-screen printing using front of the Precious Metal to silicon wafer, obtains main gate line and pair
Grid line；Silk-screen printing is carried out using only the back side of the aluminium paste to silicon wafer, realizes the Al-BSF covering of solar battery sheet；And
Fast Sintering device, is used to form Ohmic contact, can collect and externally conduct photo-generated carrier.
A preferred embodiment of the invention, the system according to the present invention further include surface fluff making device, are made
Suede structure is obtained on the surface of silicon wafer with chemical reagent.Preferably, the system according to the present invention further includes cleaning device,
Chemical reagent remaining in surface fluff making device is cleaned.
A preferred embodiment of the invention, the system according to the present invention further include plasma etching device,
Edge PN junction is etched by plasma etching and is removed.Additionally or instead, the system according to the present invention further includes dephosphorization silicon
Glass device, the phosphorosilicate glass formed in diffusion device on the surface of silicon wafer by chemical corrosion method removal.Additionally
Ground or instead, the system according to the present invention further includes burnishing device, by the surface polishing of silicon wafer.Additionally or instead,
The system according to the present invention further includes low-temperature annealing device, for restoring in the silicon wafer by the diffusion device
Lattice defect caused by high temperature.Additionally or instead, the system according to the present invention further includes coated with antireflection film device, in silicon
The front of piece deposits one or more layers antireflective coating.
Preferably, the system according to the present invention further includes light injection or electrical pumping device.
Detailed description of the invention
Figure 1A shows the solar battery sheet that preparation according to an embodiment of the present invention is used for PERC imbrication component
Method exemplary process diagram, Figure 1B shows the particular content in screen printing step according to the present invention,
Fig. 2 shows the solar-electricities according to the present invention in the preparation of the solar battery sheet for PERC imbrication component
A kind of positive schematic top plan view of embodiment of pond piece,
Fig. 3 shows the side sectional view in the solar battery sheet for PERC imbrication component,
Fig. 4 shows the partial enlargement side sectional view of PERC imbrication component according to the present invention,
Fig. 5 shows the imbricated texture between cell piece according to prior art,
Fig. 6 shows the imbricated texture between the cell piece of a preferred embodiment according to the present invention, and
Fig. 7 A, Fig. 7 B and Fig. 7 C, which respectively show front, the sides of the PERC imbrication component according to the present invention assembled
Face and the back side.
Specific embodiment
The solar battery sheet that preparation according to the present invention is used for PERC imbrication component is described in detail next, with reference to attached drawing
Method, prepare PERC imbrication component method, the solar battery sheet for PERC imbrication component, PERC imbrication component, with
And system of the preparation for the solar battery sheet of PERC imbrication component.Forth below is only according to the present invention preferred
Embodiment, those skilled in the art can expect can be realized on the basis of the preferred embodiment of the invention other
Mode, the other modes are equally fallen within the scope of the present invention.
Referring to Figure 1A, the method for the solar battery sheet it illustrates preparation according to the present invention for PERC imbrication component
Exemplary process diagram, this will be described in detail following.
Firstly, the method for solar battery sheet of the preparation according to the present invention for PERC imbrication component includes providing silicon wafer
Step, to provide silicon wafer.According to a kind of embodiment, silicon wafer is provided in a conventional manner as the original for preparing solar battery sheet
Material, silicon wafer can be monocrystalline silicon or polysilicon.For example, the solar-grade silicon single crystal rod of crucible vertical pulling legal system can be used, it is original
Shape is cylinder, is then cut into square silicon wafer (or polycrystalline square silicon wafer), the side length of silicon wafer is generally 10~17cm, thickness
The p-type of about 50~350um, resistivity about 0.1-10 Ω .cm.
The method of solar battery sheet of the preparation according to the present invention for PERC imbrication component may include optional table
Wheat flour suede step, wherein using chemical reagent (usually with the alkaline solution of heat, such as sodium hydroxide, potassium hydroxide, lithium hydroxide
With ethylenediamine etc.), anisotropic etch is carried out to the surface of silicon wafer, suede structure is obtained on the surface of silicon wafer (such as every
Square centimeter silicon chip surface forms millions of four sides side cones, i.e. pyramid structures), thus realize increase specific surface area and
It can receive more multi-photon (energy), reduce the reflection of incident light at the same time.Multiple reflections due to incident light on surface
And refraction, the absorption of light is increased, the short circuit current and transfer efficiency of battery are improved.
The method of solar battery sheet of the preparation according to the present invention for PERC imbrication component may include optional clear
Step is washed, wherein cleaning for remaining chemical reagent in above-mentioned making herbs into wool step, such as neutralizes silicon chip surface with acid
Alkali residual and metal impurities, to reduce its influence to battery knot.
The method of solar battery sheet of the preparation according to the present invention for PERC imbrication component includes diffusion step,
Phosphorus oxychloride (POCl is wherein for example provided3) it is used as diffusion source, use nitrogen by trichlorine oxygen usually under 850~900 DEG C of high temperature
Phosphorus brings quartz container into, passes through the reaction of phosphorus oxychloride and silicon wafer, i.e. POCL3With O2Reaction generates P2O5It is deposited on silicon chip surface.
P2O5It is reacted with Si and generates SiO2And phosphorus atoms, by certain time, phosphorus atoms enter the superficial layer of silicon wafer from surrounding, and
It is spread by the gap between silicon atom to silicon wafer internal penetration, the friendship of N-type semiconductor and P-type semiconductor is formd in silicon wafer
Interface, that is, PN junction.
Due in above-mentioned diffusion step, though using diffusion back-to-back, all surface of silicon wafer include edge all
Phosphorus will be inevitably spread, light induced electron collected by the front of PN junction there can be the region of phosphorus to flow to along edge-diffusion
The back side of PN junction, i.e. silicon chip edge form short-channel.Therefore, preparation according to the present invention is used for PERC imbrication component too
The method of positive energy cell piece may include plasma etching step, remove wherein being etched edge PN junction by plasma etching,
Avoid edge that short circuit occurs.In general, plasma etching is reaction gas CF in a low voltage state4Parent molecule in radio frequency function
It is generated under the excitation of rate and ionizes and form plasma.Plasma is made of the electronics and ion charged, in reaction cavity
Gas under the shock of electronics, other than being transformed into ion, moreover it is possible to absorb energy and form a large amount of active group.It is active anti-
Group is answered to reach SiO due to diffusion or under electric field action2It is anti-with the material surface that is etched chemistry to occur for surface there
It answers, and forms volatile reaction product and be detached from the material surface that is etched, cavity is extracted out by vacuum system.
After plasma etching step, polishing step can be optionally executed, by the surface polishing of silicon wafer.
On the other hand, due to forming one layer of SiO containing P elements in silicon chip surface in above-mentioned diffusion step2,
Referred to as phosphorosilicate glass, the method according to the present invention for preparing the solar battery sheet for PERC imbrication component may include
PSG (phosphorosilicate glass) step makes its generation wherein by chemical corrosion method, such as putting silicon wafer and impregnating in a solution of hydrofluoric acid
Chemical reaction generates soluble network and object hexafluorosilicic acid, to remove the phosphorus silicon glass formed in diffusion on the surface of silicon wafer
Glass.Phosphorosilicate glass alternately can also be removed to silicon effect by fluorine and oxygen under the conditions of glow discharge.
It optionally, can after going PSG step as the lattice defect caused by the high temperature in above-mentioned diffusion step
To execute low temperature anneal step to silicon wafer, to restore the lattice defect in silicon wafer.Preferably, annealing temperature for example can be 700-
820 DEG C, annealing time for example can be 5~20min.
The method of solar battery sheet of the preparation according to the present invention for PERC imbrication component includes back passivation step, is used
In in one layer of back passivating film of the back side of silicon wafer application.For example, can using PECVD (plasma enhanced chemical vapor deposition) or
Backside deposition one layer of back passivating film, the preferably di-aluminium trioxide film of person ALD (atomic layer deposition) technique in silicon wafer.PECVD
Technical principle be to make energy source using low temperature plasma, sample is placed under low pressure on the cathode of glow discharge, utilize
Glow discharge makes sample be warming up to scheduled temperature, then passes to suitable reaction gas (such as trimethyl aluminium), gas is through one
Sequence of chemical reaction and plasma reaction form solid film, i.e. nitrogen di-aluminium trioxide film in sample surfaces.On the other hand,
Excellent three-dimensional stickiness and uniformity of film may be implemented in ALD technique, can be effectively matched black silicon structure, plays the black silicon of passivation
Effect.The thickness of the aluminum oxide passivating film of generation is, for example, 5~50nm.
The method of solar battery sheet of the preparation according to the present invention for PERC imbrication component includes plating back protection film
Step, wherein being sunk on back passivating film (such as di-aluminium trioxide film) by pecvd process at the back side of silicon wafer, more precisely
Product layer protecting film (such as silicon nitride film), to increase reflected light while passivating film is carried on the back in protection.Here, the skill of PECVD
Art is similar to the above-mentioned PECVD technique employed in back passivation step, different (such as the SiH of the reaction gas that is used only4With
NH3).The thickness of the nitrogen oxide film deposited can according to need for example, 20-200nm.
Since optional polishing step can be carried out after plasma etching step for silicon chip surface, and silicon after polishing
The reflectivity on piece surface is 35%, in order to reduce surface reflection, improves the transfer efficiency of battery, preparation according to the present invention is used for
The method of the solar battery sheet of PERC imbrication component includes front coated with antireflection film step, thus deposits one on the surface of silicon wafer
Layer or double-layer reflection reducing coating (such as silicon nitride film), wherein the technical principle of PECVD is to make energy source using low temperature plasma,
Sample is placed under low pressure on the cathode of glow discharge, so that sample is warming up to scheduled temperature using glow discharge, then leads to
Enter suitable reaction gas SiH4And NH3, gas formed solid in sample surfaces through series of chemical and plasma reaction
State film, that is, silicon nitride film.Under normal circumstances, using the thin of the process deposits of this plasma enhanced chemical vapor deposition
Film thickness is at tens nanometers (nm) Zuo You.The film of thickness has optical functionality in this way.It, can be with using film interference principle
It is greatly reduced the reflection of light, the short circuit current of battery and output are just increased considerably, and efficiency also has comparable raising.
The method of solar battery sheet of the preparation according to the present invention for PERC imbrication component further includes laser grooving step
Suddenly, wherein revealing by laser ablation through slotting with carrying on the back passivating film (di-aluminium trioxide film) and back protection film (silicon nitride film)
Silicon wafer out, the back electric field and silicon wafer applied in order to the later period realize good Ohmic contact.It wherein can be used in the prior art
Common laser ablation technology.The shape of fluting can according to need as several strips or several dotted slots.
PN junction has been made in above-mentioned diffusion step, silicon wafer is allowed to generate electric current under light illumination.In order to incite somebody to action
The electric current of generation exports, and needs to make positive and negative two electrodes on battery surface.There are many method for manufacturing electrode, and screen printing
Brush is a kind of current production most common production technology of solar cel electrode.Silk-screen printing is will be scheduled by the way of coining
Graphic printing on substrate, its working principle is that: using silk screen visuals mesh penetrate slurry, with scraper silk screen slurry
Position applies certain pressure, while mobile towards the silk screen other end, and slurry is squeezed from the mesh of visuals by scraper on the move
It is pressed on substrate.Since the viscous effect of slurry makes trace fixation in a certain range, in printing scraper plate always with screen printing forme
It is linearly contacted with substrate, contact line is mobile with scraper and moves, to complete print stroke.Preparation according to the present invention is used for
The method of the solar battery sheet of PERC imbrication component includes screen printing step, wherein referring to Figure 1B, uses Precious Metal
Silk-screen printing is carried out to the front of silicon wafer, obtains main gate line and secondary grid line；Screen printing is carried out using only the back side of the aluminium paste to silicon wafer
Brush realizes the Al-BSF covering of solar battery sheet.Aluminium paste for example can be the particle, glass powder, organic solvent by metallic aluminium
The thick slurry of composed mixture.In the screen printing step, if can according to need reserved in silicon chip back side
Dry cutting seam.
Through the invention, only apply aluminium paste at the back side of solar battery sheet, eliminate the prior art at the back side of silicon wafer
The Precious Metal that uses, such as metal silver paste, usual every cell piece can directly save 20~50mg silver consumption.Due to that will show
Have in technology and (noble metal main gate line) He Erdao (Al-BSF) process together in the screen printing step of silicon chip back side simplified,
Al-BSF is formed using only aluminium paste, reduces technological process of production step, improve production efficiency, while being reduced because of printed back
Main gate line bring yield downside risk.It is incorporated in front and for example completes photo-generated carrier conduction with the major-minor grid line that silver paste is printed
The foundation of carrier, at the same reduce the back side main gate line bring Al-BSF missing and silver paste preparation back side main gate line and Al-BSF it
Between influence of the contact resistance to imbrication battery conversion efficiency.
Silicon wafer after silk-screen printing, metal paste do not form alloy body with silicon substrate completely, cannot directly use.For
This, the method for solar battery sheet of the preparation according to the present invention for PERC imbrication component includes Fast Sintering step, is utilized
The effect of glass powder is so that the metal silver paste for being applied to front side of silicon wafer passes through silicon nitride indigo plant film and reaches close PN junction position in slurry
Good Ohmic contact is formed with silicon substrate to finally realize, can collect and externally conduct photo-generated carrier.
In addition, light can also be performed in the method for solar battery sheet of the preparation according to the present invention for PERC imbrication component
Thus injection or electrical pumping process reduce the optical attenuation of imbrication battery.
Referring to Fig. 2, Fig. 3 for the solar battery sheet by preparation according to the present invention for PERC imbrication component
The structure of the obtained solar battery sheet of method be specifically described.
Front gate line structure and the conventional method preparation of solar battery sheet according to the present invention are used for PERC imbrication group
The solar battery sheet of part is similar, and referring to fig. 2, solar battery sheet generally includes between the main gate line that more are spaced apart and Duo Gen
It every the secondary grid line of distribution, can be formed by Precious Metal, and every main gate line is electrically connected with more secondary grid lines.According to another
Chamfering has can be set in the both ends of a kind of embodiment, the secondary grid line of outermost two of each solar battery sheet, in addition,
It is possible that bevel edge is arranged in the end of secondary grid line in the chamfering of secondary grid line.
The back side of solar battery sheet according to the present invention be not as conventional method prepare be used for PERC imbrication component
Solar battery sheet has the main gate line formed by Precious Metal, but only has the entire back side of covering formed by aluminium paste
Al-BSF (referring to Fig. 3) reserves several cutting seams at the back side of solar battery sheet wherein can according to need, in order to rear
Entire silicon wafer, i.e. solar battery sheet are cut and separated in continuous process.However, according to actual needs, solar battery
The back side of piece can also be not provided with cutting seam.
Extraly, efficiency stepping test can be carried out to the obtained solar battery sheet for PERC imbrication component,
Internal cell current mismatch when to avoid for the encapsulation of the solar battery sheet of PERC imbrication component.Wherein test can be used dedicated
Metal contact probe row or wire mesh, upper probe row or wire mesh be in contact with the positive silver of front main grid, below battery by
Then Al-BSF can directly adopt metal base plate and realize face contact.
The solar energy that the method for solar battery sheet by preparation according to the present invention for PERC imbrication component obtains
Cell piece, can by further for example by laser ablation or machine cuts in a manner of cut and be separated into several baby battery pieces,
Such as 2-10 piece, each baby battery piece be included in it is positive for conduction silver-colored main gate line (width is, for example, 0.1-2mm) and
The overleaf Al-BSF for conduction, each baby battery piece are arranged with imbricated way between each other and realize that with conductive adhesive
This is interconnected, referring to fig. 4-Fig. 6.For example, coating a certain amount of conductive adhesive in the baby battery on piece for PERC imbrication component
(such as ECA) passes through mechanical handing for the Al-BSF position of the front main grid line of a baby battery piece and next baby battery piece again
It is overlapped ground and carries out lamination, wherein overlapping widths are 0.2-5mm, to realize that a certain number of baby battery pieces are mutually unified into battery strings.
One or more battery strings obtain imbrication component after interconnection and encapsulation.
Specifically, referring to Fig. 7 A, Fig. 7 B and Fig. 7 C, which respectively show the PERC imbrication groups according to the present invention assembled
Front, side and the back side of part.Referring to Fig. 7 A, in the front of PERC imbrication component, in regular fashion by multiple baby battery pieces
It is laid with, is around fixed with frame.Referring to fig. 4, imbrication component according to the present invention is shown with side, sectional, most lower
Side is equipped with backboard.It is laid with articulamentum on the backboard, it typically is EVA, are also possible to POE etc..In a manner of imbrication
Baby battery piece interconnected forms battery strings and is arranged on this articulamentum on longitudinal direction.Light transmission is equipped in battery strings to connect
Layer is connect, light transmittance is at least 93%, usually EVA, is also possible to POE etc..Light transmission protective layer, such as is provided with topmost
Glass etc..
Due to battery strings need draw string electric current, the front main grid line (usually silver grating line) of general cell piece and with routine
Painting tin copper strips can be completed to weld at high temperature, but positive Al-BSF and the more difficult completion at high temperature of conventional painting tin copper strips are welded,
Adhesive strength cannot be effectively ensured by high-temperature soldering by applying tin copper strips and Al-BSF.For this purpose, for conventional imbrication lamination process sheet
Invention proposes that two methods, first method are that material position increase by one has the back side to have on the imbrication battery of main gate line on laminating machine
Material position, this piece and the conventional tin copper strips that applies can realize high-temperature soldering and can guarantee bonding strength.The imbrication of N piece quantity to be had is small
After cell piece builds up string, the cell piece drawn with confluence is interconnected with string at N+1, to realize that there are remittance in two ends
Stream is drawn.Second method directlys adopt conductive adhesive and is directly connected to apply tin copper strips and Al-BSF, to realize that two ends are equal
There is confluence to draw.For the imbricated texture between cell piece, in the prior art usually as shown in figure 5, with imbricated way phase
The positive front main grid line of cell piece and the back side main gate line at the cell piece back side are connected with conducting resinl between the cell piece to connect
It connects.According to the present invention, as shown in fig. 6, the imbricated texture between cell piece is directly connected to cell piece front using conductive adhesive
Front main grid line and Al-BSF, to realize two ends and have that confluence is drawn.
It is identical as conventional imbrication packaging technology after the preparation of above-mentioned PERC imbrication component string, it is laminated and applies by typesetting
If, middle inspection, lamination, deburring, frame up, terminal box, solidification, cleaning test etc. processes complete imbrication component preparation, thus folded
Watt component.
In order to prepare solar battery sheet, according to the present invention it is proposed that a kind of solar energy prepared for PERC imbrication component
The system of cell piece comprising:
Silicon wafer provides device, provides silicon wafer as the raw material for preparing solar battery sheet；
Diffusion device forms the interface of N-type semiconductor and P-type semiconductor, i.e. PN junction in silicon wafer；
Passivating device is carried on the back, passes through PECVD ALD technique in backside deposition one layer of back passivating film, preferably three of silicon wafer
Al 2 O film；
Back-protective film device is plated, is carried on the back by pecvd process at the back side of silicon wafer, more precisely in aluminum oxide
Layer protecting film, such as silicon nitride film are deposited on passivating film；
Laser grooving device, by being laser-ablated in back passivating film (di-aluminium trioxide film) and back protection film (silicon nitride
Film) in fluting, expose silicon wafer, the back electric field and silicon wafer applied in order to the later period realizes good Ohmic contact；
Silk-screen printing device carries out silk-screen printing using front of the Precious Metal to silicon wafer, obtains main gate line and pair
Grid line；Silk-screen printing is carried out using only the back side of the aluminium paste to silicon wafer, realizes the Al-BSF covering of solar battery sheet；And
Fast Sintering device, is used to form Ohmic contact, can collect and externally conduct photo-generated carrier.
In addition, the system according to the present invention can also include surface fluff making device, it is arranged in silicon wafer and provides under device
It swims and obtains suede structure on the surface of silicon wafer using chemical reagent.Preferably, the system according to the present invention further includes clear
Cleaning device is arranged in the downstream of surface fluff making device and chemical reagent remaining in surface fluff making device is carried out clear
It washes.
In addition, the system according to the present invention can also include plasma etching device, it is arranged in diffusion device
Downstream and by plasma etching by edge PN junction etch remove.Additionally or instead, the system according to the present invention is also wrapped
Burnishing device is included, is arranged in the downstream of plasma etching device and for polishing to silicon wafer.Additionally or instead,
The system according to the present invention further includes phosphorosilicate glass (removing PSG) device, also be disposed on the downstream of diffusion device and
The phosphorosilicate glass formed in diffusion device on the surface of silicon wafer by chemical corrosion method removal.Additionally or instead,
The system according to the present invention further includes low-temperature annealing device, and usually arrangement goes to phosphorosilicate glass (removing PSG) device downstream, by moving back
Fire restores the lattice defect as caused by the high temperature in diffusion device in silicon wafer.Preferably, the system according to the present invention is also
Including coated with antireflection film device, be arranged in the downstream of plating back-protective film device and by pecvd process silicon wafer just
Face deposits one or more layers antireflective coating, such as silicon nitride film.
Preferably, the system according to the present invention further includes light injection or electrical pumping device, can be arranged in Fast Sintering
The downstream of device.
By the above content, those skilled in the art, which will readily recognize that, to make the alternative structure of presently disclosed structure
For feasible alternate embodiments, and embodiment disclosed in this invention can be combined to generate new embodiment party
Formula, they equally fall within the scope of the appended claims.
Claims (36)
1. a kind of method for preparing the solar battery sheet for PERC imbrication component, comprising the following steps:
Silicon wafer step is provided, provides silicon wafer as the raw material for preparing the solar battery sheet；
Diffusion step forms the interface of N-type semiconductor and P-type semiconductor, i.e. PN junction in the silicon wafer；
Passivation step is carried on the back, one layer of back passivating film is applied at the back side of the silicon wafer by PECVD ALD technique；
Back protection film step is plated, layer protecting film is deposited on the back passivating film by PECVD method；
Laser grooving step is slotted by being laser-ablated in the back passivating film and the back protection film, exposes silicon wafer；
Screen printing step, wherein using Precious Metal to the silicon wafer front carry out silk-screen printing, obtain main gate line and
Secondary grid line；Silk-screen printing is carried out using only the back side of the aluminium paste to the silicon wafer, realizes that the Al-BSF of the solar battery sheet is covered
Lid；And
Fast Sintering step forms Ohmic contact, can collect and externally conduct photo-generated carrier.
2. according to the method for claim 1, which is characterized in that execute surface wool manufacturing step after the offer silicon wafer step
Suddenly, suede structure is obtained on the surface of the silicon wafer using chemical reagent.
3. according to the method for claim 2, which is characterized in that cleaning step is executed after the surface wool manufacturing step,
Remaining chemical reagent in the making herbs into wool step is cleaned.
4. according to method described in any one of preceding claims 1 to 3, which is characterized in that the diffusion step it
Plasma etching step is executed afterwards, and edge PN junction is etched by plasma etching and is removed.
5. according to the method for claim 4, which is characterized in that execute polishing step after the plasma etching step
Suddenly, by the surface polishing of the silicon wafer.
6. according to method described in any one of preceding claims 1 to 3, which is characterized in that the diffusion step it
It executes afterwards and goes phosphorosilicate glass step, by chemical corrosion method removal in the surface shape of the silicon wafer in the diffusion step
At phosphorosilicate glass.
7. according to the method described in any one of claims 1 to 3, which is characterized in that it is described go phosphorosilicate glass step after
Low temperature anneal step is executed, to restore in the silicon wafer as the lattice defect caused by the high temperature in the diffusion step.
8. according to method described in any one of preceding claims 1 to 3, which is characterized in that walked in the plating back protection film
Coated with antireflection film step is executed after rapid, one or more layers antireflective coating is deposited in the front of the silicon wafer by PECVD method.
9. according to method described in any one of preceding claims 1 to 3, which is characterized in that the Fast Sintering step it
Light injection or electrical pumping process are executed afterwards.
10. according to method described in any one of preceding claims 1 to 3, which is characterized in that the Precious Metal is metal
Silver paste, the thick slurry for the mixture which is made of the particle, glass powder, organic solvent of metallic silver
Material.
11. according to method described in any one of preceding claims 1 to 3, which is characterized in that the aluminium paste is by metallic aluminium
Particle, glass powder, mixture composed by organic solvent thick slurry.
12. according to method described in any one of preceding claims 1 to 3, which is characterized in that in the screen printing step
In, in the reserved one or more cutting seams in the back side of the silicon wafer.
13. according to method described in any one of preceding claims 1 to 3, which is characterized in that the back passivating film is three oxidations
Two aluminium films.
14. according to method described in any one of preceding claims 1 to 3, which is characterized in that the back protection film is nitridation
Silicon fiml.
15. a kind of method for preparing PERC imbrication component, comprising the following steps:
Solar battery sheet is prepared according to method described in any one of preceding claims 1 to 14；
The solar battery sheet is cut and is separated into multiple baby battery pieces；
Each baby battery piece with imbricated way arrangement and realizes mutual connection between each other with conductive adhesive；And
Encapsulation.
16. according to the method for claim 15, which is characterized in that carry out the survey of efficiency stepping to the solar battery sheet
Examination.
17. a kind of solar battery sheet for PERC imbrication component, the front of the solar battery sheet includes more intervals
The secondary grid line that the main gate line and Duo Gen of distribution are spaced apart, the main gate line and the secondary grid line are formed by Precious Metal, institute
The back side for stating solar battery sheet includes back passivating film, back protection film, through the back passivating film and the back protection film
Fluting and the Al-BSF for almost covering the entire back side that is formed by aluminium paste, which is characterized in that the solar battery
The back side of piece does not have the main gate line formed by Precious Metal.
18. solar battery sheet according to claim 13 reserves multiple cutting seams at the back side of the solar battery.
19. according to solar battery sheet described in preceding claims 13 or 14, which is characterized in that the Precious Metal is gold
Belong to silver paste, the thick slurry for the mixture which is made of the particle, glass powder, organic solvent of metallic silver
Material.
20. according to solar battery sheet described in preceding claims 13 or 14, which is characterized in that the aluminium paste is by metallic aluminium
Particle, glass powder, mixture composed by organic solvent thick slurry.
21. according to solar battery sheet described in preceding claims 13 or 14, which is characterized in that the back passivating film is three oxygen
Change two aluminium films.
22. according to solar battery sheet described in preceding claims 13 or 14, which is characterized in that the back protection film is nitrogen
SiClx film.
23. a kind of PERC imbrication component, which is characterized in that the PERC imbrication component is by according in preceding claims 17 to 22
Described in any item solar battery sheets are constituted.
24. a kind of system for preparing the solar battery sheet for PERC imbrication component, including following device:
Silicon wafer provides device, provides silicon wafer as the raw material for preparing the solar battery sheet；
Diffusion device forms the interface of N-type semiconductor and P-type semiconductor, i.e. PN junction in the silicon wafer；
Passivating device is carried on the back, passes through PECVD ALD technique in one layer of back passivating film of backside deposition of the silicon wafer；
Back-protective film device is plated, layer protecting film is deposited on the back passivating film by pecvd process；
Laser grooving device is slotted by being laser-ablated in the back passivating film and the back protection film, exposes the silicon
Piece；
Silk-screen printing device carries out silk-screen printing using front of the Precious Metal to the silicon wafer, obtains main gate line and pair
Grid line；Silk-screen printing is carried out using only the back side of the aluminium paste to the silicon wafer, realizes the Al-BSF covering of the solar battery sheet；
And
Fast Sintering device, is used to form Ohmic contact, can collect and externally conduct photo-generated carrier.
25. according to the system described in claim 24, which is characterized in that the system also includes surface fluff making devices, use
Chemical reagent obtains suede structure on the surface of the silicon wafer.
26. according to the system described in claim 25, which is characterized in that the system also includes cleaning devices, in institute
Remaining chemical reagent in surface fluff making device is stated to be cleaned.
27. according to system described in any one of preceding claims 24 to 26, which is characterized in that the system also includes it is equal from
Edge PN junction is etched by plasma etching and is removed by sub- etching device.
28. according to the system described in claim 27, which is characterized in that the system also includes burnishing devices, by the silicon
The surface polishing of piece.
29. according to system described in any one of preceding claims 24 to 26, which is characterized in that the system also includes dephosphorizations
Silica glass device, the phosphorus silicon formed in the diffusion device on the surface of the silicon wafer by chemical corrosion method removal
Glass.
30. according to system described in any one of claim 24 to 26, which is characterized in that the system also includes low-temperature annealings
Device, for restoring in the silicon wafer as the lattice defect caused by the high temperature in the diffusion device.
31. according to system described in any one of preceding claims 24 to 26, which is characterized in that the system also includes platings to subtract
Film device is reflected, deposits one or more layers antireflective coating in the front of the silicon wafer.
32. according to system described in any one of preceding claims 24 to 26, which is characterized in that the system also includes light notes
Enter or electrical pumping device.
33. according to system described in any one of preceding claims 24 to 26, which is characterized in that the Precious Metal is gold
Belong to silver paste, the thick slurry for the mixture which is made of the particle, glass powder, organic solvent of metallic silver
Material.
34. according to system described in any one of preceding claims 24 to 26, which is characterized in that the aluminium paste is by metallic aluminium
Particle, glass powder, mixture composed by organic solvent thick slurry.
35. according to system described in any one of preceding claims 24 to 26, which is characterized in that the back passivating film is three oxygen
Change two aluminium films.
36. according to system described in any one of preceding claims 24 to 26, which is characterized in that the back protection film is nitrogen
SiClx film.
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| CN201810313101.2A CN110364578A (en) | 2018-04-09 | 2018-04-09 | Method and system of the preparation for the solar battery sheet of PERC imbrication component |
| PCT/CN2018/087534 WO2019196163A1 (en) | 2018-04-09 | 2018-05-18 | Method and system for preparing solar cell chip used for perc imbrication assembly |
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| CN201810313101.2A CN110364578A (en) | 2018-04-09 | 2018-04-09 | Method and system of the preparation for the solar battery sheet of PERC imbrication component |
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| CN114203856A (en) * | 2021-11-26 | 2022-03-18 | 深圳市拉普拉斯能源技术有限公司 | Low-voltage horizontal phosphorus diffusion production line for solar photovoltaic cell |
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| CN101632180B (en) * | 2007-02-08 | 2012-03-28 | 无锡尚德太阳能电力有限公司 | Hybrid silicon solar cells and method of fabricating same |
| CN101359702B (en) * | 2008-09-19 | 2012-11-07 | 中国科学院电工研究所 | Method for preparing crystal silicon solar cell local back contact |
| CN101540350B (en) * | 2009-04-30 | 2010-07-28 | 中山大学 | Process for preparing back point-contact crystalline-silicon solar cells |
| WO2013109466A1 (en) * | 2012-01-16 | 2013-07-25 | Ferro Corporation | Aluminum conductor paste for back surface passivated cells with locally opened vias |
| CN107425085A (en) * | 2017-03-30 | 2017-12-01 | 陈文英 | A kind of preparation method of the back contacts crystal silicon solar batteries of passivating back |
| CN107768454A (en) * | 2017-09-18 | 2018-03-06 | 成都晔凡科技有限公司 | Cell piece and its method of testing for imbrication component |
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| CN114203856A (en) * | 2021-11-26 | 2022-03-18 | 深圳市拉普拉斯能源技术有限公司 | Low-voltage horizontal phosphorus diffusion production line for solar photovoltaic cell |
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