CN107706268A - Using the preparation method of the PERT crystal-silicon solar cells of new doping way - Google Patents
Using the preparation method of the PERT crystal-silicon solar cells of new doping way Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 80
- 239000010703 silicon Substances 0.000 title claims abstract description 80
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 238000009792 diffusion process Methods 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 38
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 23
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000007787 solid Substances 0.000 claims abstract description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011574 phosphorus Substances 0.000 claims abstract description 12
- 229910019213 POCl3 Inorganic materials 0.000 claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 238000004140 cleaning Methods 0.000 claims description 23
- 239000004411 aluminium Substances 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 10
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 239000005297 pyrex Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000006117 anti-reflective coating Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 5
- 229960002050 hydrofluoric acid Drugs 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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Abstract
The invention discloses a kind of preparation method of the PERT crystal-silicon solar cells using new doping way, silicon chip expands technique altogether using B, P, positive P diffusions, back surface B spreads, silicon chip two panels is one group, every group of silicon chip inserts paper-like Solid Source B sources using being diffused in back-to-back fashion vertically between two panels silicon chip back side, front carries out positive phosphorus diffusion by the way of logical POCl3；Promote diffusion furnace to be spread altogether in progress high temperature, the front of silicon chip is formed n+ doped layers, the back side forms p+ doped layers.Overcome the problem of complex procedures present in the diffusion way deposited respectively and low efficiency are taken in front side of silicon wafer and the back side in background technology.
Description
Technical field
The invention belongs to crystal silicon solar energy battery manufacturing field, is related to a kind of whole face doping in back side, and back of the body passivation
The preparation method of the high efficiency crystalline silicon solar cell of antapex contact, more particularly to a kind of PERT using new doping way are brilliant
The preparation method of body silicon solar cell.
Background technology
Under the background that the problems such as energy shortage, shortage of resources and environmental pollution becomes increasingly conspicuous, using natural resources too
Sun can generate electricity, and oneself is taken as the countermeasure for solving the problems, such as global warming and fossil fuel exhaustion, is favored by countries in the world.So
And higher production cost governs its application, and as government subsidy is significantly cut down, the production cost of cell piece is reduced,
Improving generating efficiency turns into the problem of each manufacturer is extremely urgent.
Chinese invention patent application, the A of application publication number CN 103996744 disclose a kind of using new doping way
The preparation method of PERT crystal-silicon solar cells.Including step：(2) front deposition phosphorosilicate glass：In the front deposition 5- of silicon chip
500nm phosphorosilicate glass layer；(3) backside deposition Pyrex：In the backside deposition 10-400nm of silicon chip Pyrex layer.Should
In invention, the diffusion way deposited respectively is taken at front side of silicon wafer and the back side, the problem of complex procedures and low efficiency be present.
The content of the invention
The present invention proposes a kind of PERT crystalline silicons using new doping way too for problem present in background technology
The preparation method in positive electricity pond, comprises the following steps：
(1) silicon chip one texture-etching side, cleaning：P-type silicon piece is selected, table is carried out under alkali lye to the two-sided of P-type silicon piece of selection
Velvet face, Chemical cleaning is then carried out in acid condition, remove surface impurity；
(2) technique is expanded using B, P altogether, positive P diffusions, back surface B diffusion, silicon chip two panels is one group, and every group of silicon chip is using perpendicular
Directly it is diffused in back-to-back fashion, paper-like Solid Source B sources is inserted between two panels silicon chip back side, front is using logical POCl3
Mode carries out positive phosphorus diffusion；Promote diffusion furnace to be spread altogether in progress high temperature, the front of silicon chip is formed n+ doped layers, back side shape
Into p+ doped layers；
(3) etching procedure, cleaning remove the phosphorosilicate glass and Pyrex of silicon chip surface residual；
(4) back side single sided deposition aluminum oxide/silicon nitride stack film；
(5) front deposited silicon nitride antireflective coating；
(6) the partially open film in the back side, B doped layers are exposed：The back side carries out metallized contact, specifically using laser overleaf
Partially open film, expose B doped layers, carry out local sial contact；
(7) back up back electrode and aluminium lamination, front printing silver grating line；
(8) sinter, test.
Preferably, making herbs into wool and cleaning are specially in step (1)：With the sodium hydroxide or hydrogen that mass fraction is 1.2 ± 0.2%
Potassium oxide solution carries out chemical attack at 80 ± 2 DEG C to p-type silicon chip surface, prepares the matte of Pyramid, then uses
The hydrofluoric acid that mass fraction is 15 ± 3% is cleaned, and the cleaning way ensures the cleanliness factor of cleaning, ensures that paper-like Solid Source expands
The uniformity for the mode of dissipating.
Preferably, in step (2)：The thickness in paper-like Solid Source B sources is 1um-100um, and the flow velocity of POCl3 is 1000
±200sccm。
Preferably, in step (2)：Diffusion technique is 840 ± 30 DEG C to high temperature altogether.
Preferably, in step (4)：The thickness of pellumina is 30 ± 6nm, and the thickness of silicon nitride film is 100 ± 6nm.
Preferably, in step (5)：The thickness of silicon nitride anti-reflecting film is 76 ± 8nm.
Preferably, in step (6)：The technique of the sial contact is that aluminium paste is imprinted on into cell back by way of printing
Face, 10 ± 6nm of printing aluminium paste thickness.
Beneficial effects of the present invention
1st, the present invention expands technique, front depositing n-type diffusion source, the diffusion of backside deposition p-type altogether in diffusion technique using B, P
Source, back-front codoping process, N+pp+ structures are formed after High temperature diffusion, complete, the work of reduction can be formed by settling at one go
Sequence, cost is saved, improved efficiency.
2nd, in order to be further ensured that in step (2), the uniformity of paper-like solid-state source diffusion mode, the present invention is to step (1)
Middle making herbs into wool and cleaning have carried out specific technique and limited, to ensure the cleanliness factor of cleaning.
Brief description of the drawings
Fig. 1 is that B, P expand process structure schematic diagram altogether in step of the present invention (2).
Embodiment
With reference to embodiment and accompanying drawing 1, the invention will be further described, but protection scope of the present invention not limited to this：
Embodiment 1：
A kind of preparation method of PERT crystal-silicon solar cells using new doping way, comprises the following steps：
(1) one texture-etching side of silicon chip 1, cleaning：P-type silicon piece 1 is selected, is existed with the sodium hydroxide solution that mass fraction is 1.0%
Chemical attack is carried out to the surface of P-type silicon piece 1 at 78 DEG C, prepares the matte of Pyramid, is then 12% with mass fraction
Hydrofluoric acid cleaned, remove surface impurity；
(2) technique is expanded using B, P altogether, positive P diffusions, back surface B diffusion, the two panels of silicon chip 1 is one group, and every group of silicon chip 1 uses
It is diffused in back-to-back fashion vertically, paper-like Solid Source B sources 2 (market is commercially available) is inserted between the back side of two panels silicon chip 1, front
Positive phosphorus diffusion is carried out by the way of logical POCl3；Promote diffusion furnace to be spread altogether in progress high temperature, make the positive shape of silicon chip 1
Into n+ doped layers, the back side forms p+ doped layers；Wherein：The thickness in paper-like Solid Source B sources 2 is 1um, and the flow velocity of POCl3 is
800sccm, diffusion technique is 810 DEG C to high temperature altogether；
(3) etching procedure, cleaning remove the phosphorosilicate glass and Pyrex of the remained on surface of silicon chip 1；
(4) back side single sided deposition aluminum oxide/silicon nitride stack film, the thickness of pellumina are 24nm, the film of silicon nitride film
Thickness is 94nm；
(5) front deposited silicon nitride antireflective coating, the thickness of silicon nitride anti-reflecting film is 68nm；
(6) the partially open film in the back side, B doped layers are exposed：The back side carries out metallized contact, specifically using laser overleaf
Partially open film, expose B doped layers, carry out local sial contact；The technique of the sial contact is by way of printing
Aluminium paste is imprinted on the cell piece back side, printing aluminium paste thickness 4nm；
(7) back up back electrode and aluminium lamination, front printing silver grating line；
(8) sinter, test.
Embodiment 2：
A kind of preparation method of PERT crystal-silicon solar cells using new doping way, comprises the following steps：
(1) one texture-etching side of silicon chip 1, cleaning：P-type silicon piece 1 is selected, is existed with the sodium hydroxide solution that mass fraction is 1.4%
Chemical attack is carried out to the surface of P-type silicon piece 1 at 82 DEG C, prepares the matte of Pyramid, is then 18% with mass fraction
Hydrofluoric acid cleaned, remove surface impurity；
(2) technique is expanded using B, P altogether, positive P diffusions, back surface B diffusion, the two panels of silicon chip 1 is one group, and every group of silicon chip 1 uses
It is diffused in back-to-back fashion vertically, paper-like Solid Source B sources 2 is inserted between the back side of two panels silicon chip 1, front is using logical trichlorine oxygen
The mode of phosphorus carries out positive phosphorus diffusion；Promote diffusion furnace to be spread altogether in progress high temperature, the front of silicon chip 1 is formed n+ doped layers,
The back side forms p+ doped layers；Wherein：The thickness in paper-like Solid Source B sources 2 is 100um, and the flow velocity of POCl3 is 1200sccm, high
Diffusion technique is 870 DEG C to temperature altogether；
(3) etching procedure, cleaning remove the phosphorosilicate glass and Pyrex of the remained on surface of silicon chip 1；
(4) back side single sided deposition aluminum oxide/silicon nitride stack film, the thickness of pellumina are 36nm, the film of silicon nitride film
Thickness is 106nm；
(5) front deposited silicon nitride antireflective coating, the thickness of silicon nitride anti-reflecting film is 84nm；
(6) the partially open film in the back side, B doped layers are exposed：The back side carries out metallized contact, specifically using laser overleaf
Partially open film, expose B doped layers, carry out local sial contact；The technique of the sial contact is by way of printing
Aluminium paste is imprinted on the cell piece back side, printing aluminium paste thickness 16nm；
(7) back up back electrode and aluminium lamination, front printing silver grating line；
(8) sinter, test.
Embodiment 3：
A kind of preparation method of PERT crystal-silicon solar cells using new doping way, comprises the following steps：
(1) one texture-etching side of silicon chip 1, cleaning：P-type silicon piece 1 is selected, is existed with the potassium hydroxide solution that mass fraction is 1.2%
Chemical attack is carried out to the surface of P-type silicon piece 1 at 80 DEG C, prepares the matte of Pyramid, is then 15% with mass fraction
Hydrofluoric acid cleaned, remove surface impurity；
(2) technique is expanded using B, P altogether, positive P diffusions, back surface B diffusion, the two panels of silicon chip 1 is one group, and every group of silicon chip 1 uses
It is diffused in back-to-back fashion vertically, paper-like Solid Source B sources 2 is inserted between the back side of two panels silicon chip 1, front is using logical trichlorine oxygen
The mode of phosphorus carries out positive phosphorus diffusion；Promote diffusion furnace to be spread altogether in progress high temperature, the front of silicon chip 1 is formed n+ doped layers,
The back side forms p+ doped layers；Wherein：The thickness in paper-like Solid Source B sources 2 is 50um, and the flow velocity of POCl3 is 1000sccm, high
Diffusion technique is 840 DEG C to temperature altogether；
(3) etching procedure, cleaning remove the phosphorosilicate glass and Pyrex of the remained on surface of silicon chip 1；
(4) back side single sided deposition aluminum oxide/silicon nitride stack film, the thickness of pellumina are 30nm, the film of silicon nitride film
Thickness is 100nm；
(5) front deposited silicon nitride antireflective coating, the thickness of silicon nitride anti-reflecting film is 76nm；
(6) the partially open film in the back side, B doped layers are exposed：The back side carries out metallized contact, specifically using laser overleaf
Partially open film, expose B doped layers, carry out local sial contact；The technique of the sial contact is by way of printing
Aluminium paste is imprinted on the cell piece back side, printing aluminium paste thickness 10nm；
(7) back up back electrode and aluminium lamination, front printing silver grating line；
(8) sinter, test.
Embodiment 4：
A kind of preparation method of PERT crystal-silicon solar cells using new doping way, comprises the following steps：
(1) one texture-etching side of silicon chip 1, cleaning：P-type silicon piece 1 is selected, is existed with the potassium hydroxide solution that mass fraction is 1.2%
Chemical attack is carried out to the surface of P-type silicon piece 1 at 80 DEG C, prepares the matte of Pyramid, is then 15% with mass fraction
Hydrofluoric acid cleaned, remove surface impurity；
(2) technique is expanded using B, P altogether, positive P diffusions, back surface B diffusion, the two panels of silicon chip 1 is one group, and every group of silicon chip 1 uses
It is diffused in back-to-back fashion vertically, paper-like Solid Source B sources 2 is inserted between the back side of two panels silicon chip 1, front is using logical trichlorine oxygen
The mode of phosphorus carries out positive phosphorus diffusion；Promote diffusion furnace to be spread altogether in progress high temperature, the front of silicon chip 1 is formed n+ doped layers,
The back side forms p+ doped layers；Wherein：The thickness in paper-like Solid Source B sources 2 is 500um, and the flow velocity of POCl3 is 1000sccm, high
Diffusion technique is 840 DEG C to temperature altogether；
(3) etching procedure, cleaning remove the phosphorosilicate glass and Pyrex of the remained on surface of silicon chip 1；
(4) back side single sided deposition aluminum oxide/silicon nitride stack film, the thickness of pellumina are 30nm, the film of silicon nitride film
Thickness is 100nm；
(5) front deposited silicon nitride antireflective coating, the thickness of silicon nitride anti-reflecting film is 76nm；
(6) the partially open film in the back side, B doped layers are exposed：The back side carries out metallized contact, specifically using laser overleaf
Partially open film, expose B doped layers, carry out local sial contact；The technique of the sial contact is by way of printing
Aluminium paste is imprinted on the cell piece back side, printing aluminium paste thickness 10nm；
(7) back up back electrode and aluminium lamination, front printing silver grating line；
(8) sinter, test.
Solar cell is prepared using above-described embodiment method, the crystal silicon solar batteries conversion efficiency prepared after tested
Batch average efficiency reaches 21.5%.And each embodiment carries out B, P using paper-like Solid Source B sources and expands technique altogether, reduces production
Process, improve yield with the time compared to the technical scheme proposed in background technology and reach 21.8%.
Meanwhile applicant has done comparative example：
A kind of preparation method of PERT crystal-silicon solar cells using new doping way, comprises the following steps：
(1) one texture-etching side of silicon chip 1, cleaning：P-type silicon piece 1 is selected, is existed with the potassium hydroxide solution that mass fraction is 0.5%
Chemical attack is carried out to the surface of P-type silicon piece 1 at 75 DEG C, prepares the matte of Pyramid, is then 0.5% with mass fraction
Hydrofluoric acid cleaned, remove surface impurity；
(2) technique is expanded using B, P altogether, positive P diffusions, back surface B diffusion, the two panels of silicon chip 1 is one group, and every group of silicon chip 1 uses
It is diffused in back-to-back fashion vertically, paper-like Solid Source B sources 2 is inserted between the back side of two panels silicon chip 1, front is using logical trichlorine oxygen
The mode of phosphorus carries out positive phosphorus diffusion；Promote diffusion furnace to be spread altogether in progress high temperature, the front of silicon chip 1 is formed n+ doped layers,
The back side forms p+ doped layers；Wherein：The thickness in paper-like Solid Source B sources 2 is 500um, and the flow velocity of POCl3 is 1000sccm, high
Diffusion technique is 840 DEG C to temperature altogether；
(3) etching procedure, cleaning remove the phosphorosilicate glass and Pyrex of the remained on surface of silicon chip 1；
(4) back side single sided deposition aluminum oxide/silicon nitride stack film, the thickness of pellumina are 30nm, the film of silicon nitride film
Thickness is 100nm；
(5) front deposited silicon nitride antireflective coating, the thickness of silicon nitride anti-reflecting film is 76nm；
(6) the partially open film in the back side, B doped layers are exposed：The back side carries out metallized contact, specifically using laser overleaf
Partially open film, expose B doped layers, carry out local sial contact；The technique of the sial contact is by way of printing
Aluminium paste is imprinted on the cell piece back side, printing aluminium paste thickness 10nm；
(7) back up back electrode and aluminium lamination, front printing silver grating line；
(8) sinter, test.
In comparative example, because potassium hydroxide solution concentration is too low in step (1), the reaction temperature of chemical attack is too low and hydrogen
The concentration of fluoric acid is too low, and the cleannes of Wafer Cleaning are inadequate, and the diffusion effect for causing paper-like Solid Source B sources 2 in step (2) reaches
Less than standard requirement.
Specific embodiment described herein is only that spirit of the present invention is illustrated.Technology belonging to the present invention is led
The technical staff in domain can be made various modifications or supplement to described specific embodiment or be replaced using similar mode
Generation, but without departing from the spiritual of the present invention or surmount scope defined in appended claims.
Claims (7)
1. the preparation method of a kind of PERT crystal-silicon solar cells using new doping way, it is characterised in that including following step
Suddenly：
(1) silicon chip one texture-etching side, cleaning：P-type silicon piece is selected, surface suede is carried out under alkali lye to the two-sided of P-type silicon piece of selection
Face, Chemical cleaning is then carried out in acid condition, remove surface impurity；
(2) technique is expanded using B, P altogether, positive P diffusions, back surface B diffusion, silicon chip two panels is one group, and every group of silicon chip is using the vertical back of the body
The mode of backrest is diffused, and paper-like Solid Source B sources is inserted between two panels silicon chip back side, front is by the way of logical POCl3
Carry out positive phosphorus diffusion；Promote diffusion furnace to be spread altogether in progress high temperature, the front of silicon chip is formed n+ doped layers, the back side forms p+
Doped layer；
(3) etching procedure, cleaning remove the phosphorosilicate glass and Pyrex of silicon chip surface residual；
(4) back side single sided deposition aluminum oxide/silicon nitride stack film；
(5) front deposited silicon nitride antireflective coating；
(6) the partially open film in the back side, B doped layers are exposed：The back side carries out metallized contact, specifically overleaf local using laser
Film is opened, exposes B doped layers, carries out local sial contact；
(7) back up back electrode and aluminium lamination, front printing silver grating line；
(8) sinter, test.
2. preparation method according to claim 1, it is characterised in that making herbs into wool in step (1), cleaning are specially：With quality point
Number carries out chemical attack, system at 80 ± 2 DEG C for 1.2 ± 0.2% sodium hydroxide or potassium hydroxide solution to p-type silicon chip surface
For the matte of Pyramid is gone out, then cleaned with the hydrofluoric acid that mass fraction is 15 ± 3%.
3. preparation method according to claim 1, it is characterised in that in step (2)：The thickness in paper-like Solid Source B sources is
1um-100um, the flow velocity of POCl3 is 1000 ± 200sccm.
4. preparation method according to claim 1, it is characterised in that in step (2)：Diffusion technique is 840 ± 30 to high temperature altogether
℃。
5. preparation method according to claim 1, it is characterised in that in step (4)：The thickness of pellumina be 30 ±
6nm, the thickness of silicon nitride film is 100 ± 6nm.
6. preparation method according to claim 1, it is characterised in that in step (5)：The thickness of silicon nitride anti-reflecting film is
76±8nm。
7. preparation method according to claim 1, it is characterised in that in step (6)：The technique of the sial contact is logical
Aluminium paste is imprinted on the cell piece back side, 10 ± 6nm of printing aluminium paste thickness by the mode for crossing printing.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444610A (en) * | 2019-07-08 | 2019-11-12 | 江苏润阳悦达光伏科技有限公司 | The manufacture craft of front silicon oxynitride solar cell |
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