CN107749396A - 一种扩散制结晶体硅太阳电池用的等离子刻边方法 - Google Patents
一种扩散制结晶体硅太阳电池用的等离子刻边方法 Download PDFInfo
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Abstract
一种扩散制结晶体硅太阳电池用的等离子刻边方法,通过在扩散源层沉积后进行等离子刻边,然后再进行高温扩散的方法,解决晶体硅太阳电池扩散制结易于造成的边缘漏电问题。本发明结合沉积固态源再进行高温扩散的方法,适用于n型单晶硅或多晶硅PERT太阳电池的制备,也可用于p型单晶硅或多晶硅的扩磷、扩硼等。经过这样的刻边过程,扩散后硅片只需采用常规的HF酸溶液即可方便去除变为氧化层的扩散源层,包括侧边的氧化层。彻底解决边缘漏电问题,且有现有晶体硅产线技术兼容,成本也很低。
Description
技术领域
本发明属于太阳电池及半导体器件领域。涉及太阳电池的制备技术。
背景技术
在扩散法制备晶体硅太阳电池的生产中,为了减少晶体硅太阳电池使用过程中的漏电,一般要进行“刻边” ,即将晶体硅片边缘刻蚀掉一定的厚度,或者用激光将硅片的边缘切掉一部分,这样可隔绝硅片的前后表面不同掺杂类型的硅膜层之间的短路漏电现象。但在现行的技术方案中,这一刻边步骤都是在硅片扩散工艺完成以后的某一工艺节点进行。其中激光切边一般应用在太阳电池完全完成以后,该方法会在边缘造成一部分烧蚀损伤区,造成太阳电池性能的下降;等离子刻边的方法一般用在硅片两面钝化膜制备完成后,其也会造成边缘区域形成一层缺陷,造成漏电;现在最常用的是湿化学刻蚀的方法,其用在扩散工艺完成后的二次刻蚀工序中,用化学试剂将硅片的边缘刻蚀掉一部分,该方法造成的损伤小,但会造成硅片前后表面本不应该被刻蚀的区域被刻蚀掉。
发明内容
本发明的目的是提出一种扩散制结晶体硅太阳电池用的等离子刻边方法,更好的解决晶体硅太阳电池扩散工艺导致的边缘漏电问题,给沉积扩散源与扩散步骤分开的扩散技术路线配套更优的刻边技术。
本发明是通过以下技术方案实现的。
本发明所述的一种扩散制结晶体硅太阳电池用的等离子刻边方法,按如下步骤:
先将做好预处理的硅片的一面或者两面沉积含有掺杂原子的扩散源薄膜层;再将需要刻边的硅片叠放在一起用等离子刻蚀机进行刻边;然后将刻边结束的硅片放入高温炉中进行扩散。
所述硅片可为单晶硅或多晶硅,可为n型导电或p型导电。
所述扩散源薄膜层可为重掺杂的非晶硅薄膜或微晶硅薄膜,也可为重掺杂的氧化硅薄膜或氮化硅薄膜,也可为这几种薄膜的复合膜层,也可为离子注入形成的重掺杂硅层。
所述高温炉是指管式高温炉,所述扩散过程在洁净空气或氮氧混合气或氩氧混合气中进行。
所述扩散结束的硅片用湿化学的方法去除硅片表面的氧化层和残留扩散源层。
发明的技术效果是:通过在扩散前进行等离子刻边,可方便的去除硅片侧面沉积的扩散源层,且因为此时尚未扩散,所以需要刻蚀掉的厚度较小;另外,刻蚀所造成的边缘损伤,在后面扩散工艺进行的过程中可恢复,且扩散过程中硅片侧边的氧化也可去除一部分晶格质量不好的表面层;再者,经过这样的刻边过程,扩散后硅片只需采用常规的HF酸溶液即可方便去除变为氧化层的扩散源层,包括侧边的氧化层。彻底解决边缘漏电问题,且与现有晶体硅产线技术兼容,成本也很低。
具体实施方式
本发明将通过以下实施例作进一步说明。
实施例1。
采用等离子辅助化学气相沉积法以硅烷:硼烷流量比为1:0.1的比例,在清洗制绒好的n型多晶硅片表面沉积一层厚度为30纳米的非晶硅薄膜作为扩散源;然后再洁净空气气氛中进行950℃,1小时的热处理;取出后采用HF去除硅片表面氧化层;再采用等离子体辅助化学气相沉积法以硅烷:磷烷流量比1:0.01的比例在多晶硅未扩硼的一面沉积一层厚度为20nm的非晶硅层;将沉积结束的硅片叠放在一起放入等离子刻蚀机,刻蚀掉边缘约1微米的厚度;然后将硅片放入到管式热处理中在洁净空气气氛下进行840℃,20分钟的退火;将硅片进入到HF溶液中去除硅片表面氧化层;进行后继的硅片两个表面的钝化减反射层的沉积和银栅线的印刷烧结。最终得到了n型PERT结构多晶硅太阳电池。
实施例2。
采用等离子辅助化学气相沉积法以硅烷:硼烷流量比为1:0.06的比例,在清洗制绒好的n型单晶硅片表面沉积一层厚度为50纳米的非晶硅薄膜作为扩散源;然后在洁净空气气氛中进行950℃,1小时的热处理;取出后采用HF去除硅片表面氧化层;再采用等离子体辅助化学气相沉积法以硅烷:磷烷流量比1:0.01的比例在单晶硅未扩硼的一面沉积一层磷原子厚度为30nm的非晶硅层;将沉积结束的硅片叠放在一起放入等离子刻蚀机,刻蚀掉边缘约10微米的厚度;然后将硅片放入到管式热处理中在洁净空气气氛下进行840℃,20分钟的退火;将硅片浸入到HF溶液中去除硅片表面氧化层;进行后继的硅片两个表面的钝化减反射层的沉积和银栅线的印刷烧结。最终得到了n型PERT结构单晶硅太阳电池。
实施例3。
采用热丝化学气相沉积法以硅烷:磷烷流量比1:0.01的比例在制绒清洗好的p型多晶硅表面沉积一层厚度为50nm的非晶硅层;将沉积结束的硅片叠放在一起放入等离子刻蚀机,刻蚀掉边缘约500纳米的厚度;然后将硅片放入到管式热处理中在洁净空气气氛下进行820℃,30分钟的退火;将硅片进入到HF溶液中去除硅片表面氧化层;然后进行硅片背面化学刻蚀抛光,再进行后继的硅片两个表面的钝化减反射层的沉积和银栅线、背面铝背场的印刷烧结。最终得到了p型PERC结构单晶硅太阳电池。
实施例4。
采用磁控溅射沉积法在制绒清洗好的p型单晶硅表面沉积一层厚度为20nm的非晶氧化硅层;将沉积结束的硅片叠放在一起放入等离子刻蚀机,刻蚀掉边缘约200nm的厚度;然后将硅片放入到管式热处理中在洁净空气气氛下进行850℃,20分钟的退火;将硅片进入到HF溶液中去除硅片表面氧化层;然后进行扩散面氮化硅沉积、铝背场和正面银栅线的丝网印刷烧结。最终得到了p型铝背场单晶硅太阳电池。
实施例5。
采用磁控溅射沉积法在制绒清洗好的p型单晶硅表面沉积一层厚度为30nm的氮化硅层;将沉积结束的硅片叠放在一起放入等离子刻蚀机,刻蚀掉边缘约500nm的厚度;然后将硅片放入到管式热处理中在洁净空气气氛下进行850℃,30分钟的退火;将硅片进入到HF溶液中去除硅片表面氧化层;然后进行扩散面氮化硅沉积、铝背场和正面银栅线的丝网印刷烧结。最终得到了p型铝背场单晶硅太阳电池。
实施例6。
将制备了单面扩硼的n型硅片,采用离子注入法在未扩散硼的一面形成一种重掺杂磷元素的硅层,将注入结束的硅片叠放在一起放入等离子刻蚀机,刻蚀掉边缘约5微米的厚度;然后将硅片放入到管式热处理中在洁净空气气氛下进行850℃,30分钟的退火;将硅片进入到HF溶液中去除硅片表面氧化层;然后进行双面钝化减反膜的制备,再进行双面银栅线的制备。最终得到了n型PERT太阳电池。
实施例7。
采用等离子辅助化学气相沉积法以硅烷:硼烷流量比为1:0.1的比例,在清洗制绒好的n型多晶硅片表面沉积一层厚度为30纳米的非晶硅薄膜作为扩散源;然后在洁净空气气氛中进行1150℃,1小时的热处理;取出后采用HF去除硅片表面氧化层;再采用等离子体辅助化学气相沉积法以硅烷:磷烷流量比1:0.01的比例在多晶硅未扩硼的一面沉积一层厚度为20nm的非晶硅层;将沉积结束的硅片叠放在一起放入等离子刻蚀机,刻蚀掉边缘约1微米的厚度;然后将硅片放入到管式热处理中在洁净空气气氛下进行840℃,25分钟的退火;将硅片进入到HF溶液中去除硅片表面氧化层;再用混合酸溶液将硅片两面各刻蚀约300nm的厚度,进行清洗烘干。然后进行后继的硅片两个表面的钝化减反射层的沉积和银栅线的印刷烧结。最终得到了n型PERT结构多晶硅太阳电池。
Claims (7)
1.一种扩散制结晶体硅太阳电池用的等离子刻边方法,其特征是在扩散源层沉积后、扩散工艺进行前采用等离子刻蚀的方法对硅片边缘进行刻蚀。
2.根据权利要求1所述的方法,其特征是技术流程为:先将做好预处理的硅片的一面或者两面沉积含有掺杂原子的扩散源薄膜层;再将需要刻边的硅片叠放在一起用等离子刻蚀机进行刻边;然后将刻边结束的硅片放入扩散炉中进行扩散,再进行后继工序。
3.根据权利要求1或2所述的方法,其特征是所述硅片为单晶硅或多晶硅。
4.根据权利要求1或2所述的方法,其特征是所述硅片为n型导电或p型导电。
5.根据权利要求2所述的方法,其特征是所述扩散源薄膜层为重掺杂的非晶硅薄膜或微晶硅薄膜,或者为重掺杂的氧化硅薄膜或氮化硅薄膜,或者为前述几种薄膜的复合膜层,或者为离子注入形成的重掺杂硅层。
6.根据权利要求1或2所述的方法,其特征是所述扩散工艺采用的炉子为管式高温炉,扩散过程在洁净空气或氮氧混合气或氩氧混合气中进行。
7.根据权利要求1或2所述的方法,其特征是扩散工艺结束后,硅片用湿化学的方法去除硅片表面的氧化层和残留扩散源层。
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