CN109920858A - A kind of the p-type MWT battery structure and preparation method of passivation contact - Google Patents
A kind of the p-type MWT battery structure and preparation method of passivation contact Download PDFInfo
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Abstract
The present invention discloses a kind of p-type MWT battery structure of passivation contact, the P-type silicon substrate back side is followed successively by P-type silicon, silicon dioxide layer, phosphorous doped polysilicon, silicon nitride layer and the first metal that silicon nitride layer surface is arranged by interior outward, first metal piercing silicon nitride layer, it is contacted with phosphorous doped polysilicon layer, silicon nitride layer surface is covered with the second metal, and the second metal does not penetrate silicon nitride；P-type silicon substrate light-receiving surface is set gradually outward by interior as P-type silicon, the aluminium oxide/silicon nitride stack film on P-type silicon surface；P+ and aluminium oxide/silicon nitride stack film of P-type silicon surface doping boron；Aluminium oxide/silicon nitride passivation lamination light-receiving surface is provided with metal negative electrode, hole of the metal negative electrode by being arranged on battery is covered on metal negative electrode above silicon nitride layer around through cell backside.The present invention uses the back side of tunnelling passivation layer passivation cell, metal electrode does not need directly to contact silicon wafer, the few son for reducing metal electrode contact position is compound, improve battery efficiency, and present invention combination MWT technology, the light-receiving surface main gate line of battery, around through silicon chip back side, is reduced the shading of light-receiving surface main grid, further increases the efficiency of battery by hole.
Description
Technical field
The present invention relates to a kind of solar battery and preparation method thereof, the p-type MWT electricity of specifically a kind of passivation contact
Pool structure and preparation method belong to solar battery processing technique field.
Background technique
Existing MWT battery light-receiving surface structure is the diffusion layer on P silicon wafer, the passivation layer above diffusion layer, above passivation layer
Metal silver electrode, metal silver electrode through hole hole around through cell backside, the MWT battery back side be aluminium adulterate the P+ to be formed layer with
And the aluminum metal electrode of P+ layer surface, i.e. MWT-AlBSF battery；Or the back side of MWT battery be p-type silicon surface aluminium oxide/
The local back surface field and the metal cladding above aluminium oxide/silicon nitride of silicon nitride passivation and aluminium doping, i.e. MWT-PERC electricity
Pond.Another TOPCon battery is N-type or P-type wafer light-receiving surface surface forms diffusion layer, and diffusion layer surface forms passivation
Layer, then face forms metal electrode on the passivation layer, the back side of TOPCon battery is that N-type or P-type silicon surface form silica tunnelling
Passivation layer, then doped polysilicon layer is formed in tunnelling passivation layer surface, finally metal electrode is covered in doped polysilicon layer.
For MWT-ALBSF battery, back metal aluminium contacts p+ silicon, causes very big minority carrier recombination, reduces electricity
Pond efficiency.MWT-PERC battery, there are localized metallic aluminium to contact p+ silicon at the back side, and minority carrier recombination is still at partial metallic contact
It is old big, reduce battery efficiency.Another TOPCon battery, the metal electrode of the light-receiving surface of battery block still than more serious,
Reduce battery efficiency.
It is found through retrieval, Chinese patent CN203760491U discloses a kind of MWT battery, and the back side of battery is silicon chip surface shape
At the P+ layer that aluminium adulterates, the metal electrode of P+ layer surface, i.e. MWT-AlBSF battery；The patent overleaf has spy on electrode structure
Different design is mainly used for reducing back electrode silver paste consumption.Furthermore Chinese patent CN105405909A discloses a kind of MWT electricity
Pond, the back side of battery are Al-BSF, this structure is MWT-Al-BSF battery structure.
Summary of the invention
Goal of the invention: aiming at the problems existing in the prior art with deficiency, the present invention provide it is a kind of passivation contact p-type
MWT battery structure and preparation method, by combining the light-receiving surface main gate line of MWT technology, battery to carry on the back by hole around through silicon wafer
Face reduces the shading of light-receiving surface main grid, further increases the efficiency of battery.
A kind of p-type MWT battery structure of passivation contact proposed by the present invention, including P-type silicon substrate, the P-type silicon substrate
The back side is followed successively by P-type silicon, silicon dioxide layer, phosphorous doped polysilicon, silicon nitride layer and the setting silicon nitride layer table by interior outward
First metal in face, the first metal piercing silicon nitride layer, contacts with phosphorous doped polysilicon layer, and the silicon nitride layer surface is covered
It is stamped the second metal, and second metal does not penetrate silicon nitride；
The P-type silicon substrate light-receiving surface is set gradually outward by interior as P-type silicon, the P+ layer of P-type silicon surface doping boron and P+ layers
The aluminium oxide on surface/silicon nitride stack film；
The aluminium oxide/silicon nitride passivation stack surface light-receiving surface is provided with metal negative electrode, the metal negative electrode is logical
The hole being arranged on battery is crossed around through cell backside, is covered on the metal negative electrode above silicon nitride layer.
Further restriction technical solution of the invention, the p-type MWT battery structure of passivation contact above-mentioned, the dioxy
SiClx layer with a thickness of 0.5-2nm；The phosphorous doped polysilicon layer is with a thickness of 10-100nm；The silicon nitride layer is with a thickness of 50-
200nm；The boron-doped p+ is with a thickness of 100-600nm.
The p-type MWT battery structure of passivation contact above-mentioned, first metal are silver metal, and second metal is aluminium
Metal.
Further, the preparation method of the p-type MWT battery structure of passivation contact above-mentioned, P-type silicon substrate light-receiving surface are not mixed
Miscellaneous boron processing step:
P-type wafer laser boring → polishing both surfaces → oxidation formed tunnel oxide → backside deposition p-doped polysilicon layer →
HCl/HF cleaning → phosphorus diffusion → HF/HNO3 solution etches light-receiving surface polysilicon → cleaning, making herbs into wool → backside deposition silicon nitride →
Front deposition aluminum oxide/silicon nitride stack film → screen-printed metallization；Concrete operations require as follows: laser pore size
100-200um, polishing removal P-type silicon layer 2-6um, silicon oxide thickness 0.5-2nm, phosphorous doped polysilicon thickness 10-100nm, HF/
HCl cleans 2-10min, phosphorus diffusion sheet resistance 80-150ohm/sqr, HF/HNO3It etches light-receiving surface and removes silicon 0.1-1um, cleaning system
Suede forms pyramid size 0.5-6um, backside deposition silicon nitride thickness 50-150nm, front deposition of aluminium oxide thickness 1-20nm,
The silicon nitride thickness 50-80nm of lamination above aluminium oxide, back up the first metal piercing silicon nitride layer, with phosphorous doped polysilicon layer
Contact, then silicon nitride layer surface printing is covered with the second metallic aluminium, and front light-receiving surface prints silver metal.
The preparation method of the p-type MWT battery structure of passivation contact above-mentioned, the P-type silicon substrate light-receiving surface adulterate boron work
Skill step: P-type wafer laser boring → polishing both surfaces → oxidation forms tunnel oxide → backside deposition p-doped polysilicon layer
→ HCl/HF cleaning → phosphorus diffusion → etching light-receiving surface polysilicon → cleaning, making herbs into wool → backside deposition masking boron diffusion film layer
→ cleaning removal boron diffusion BSG → backside deposition silicon nitride → front deposits aluminum oxide/silicon nitride stack film → screen printing
Brush metallization；Concrete operations require as follows: laser pore size 100-200um, polishing removal P-type silicon layer 2-6um, silicon oxide thickness
0.5-2nm, phosphorous doped polysilicon thickness 10-100nm, HF/HCl clean 2-10min, phosphorus diffusion sheet resistance 80-150ohm/sqr, HF/
HNO3It etches light-receiving surface and removes silicon 0.1-1um, cleaning and texturing forms pyramid size 0.5-6um, and backside deposition silica boron expands
Masking film is dissipated, thicknesses of layers 10-50nm, HF/HCl clean diffused layer of boron BSG, scavenging period 2-5min, backside deposition silicon nitride
Thickness 50-150nm, front deposition of aluminium oxide thickness 1-20nm, the silicon nitride thickness 50-80nm of lamination, the back side above aluminium oxide
The first metal piercing silicon nitride layer is printed, is contacted with phosphorous doped polysilicon layer, then silicon nitride layer surface printing is covered with the second gold medal
Belong to aluminium, front printing silver metal.
The utility model has the advantages that MWT battery structure combination TOPCon battery structure of the invention, using tunnelling passivation layer passivation cell
The back side, metal electrode do not need directly to contact silicon wafer, and the few son for reducing metal electrode contact position is compound, raising battery efficiency,
And present invention combination MWT technology, the light-receiving surface main gate line of battery, around through silicon chip back side, reduce light-receiving surface main grid by hole
Shading, further increase the efficiency of battery.The metal of cell backside of the invention and the minority carrier recombination of silicon contact position
It is effectively reduced, battery efficiency is further enhanced, and present invention combination MWT technology, the light-receiving surface main gate line quilt of battery
Cell backside is moved on to, shading is reduced, further increases battery efficiency.
Detailed description of the invention
Fig. 1 is battery structure schematic diagram of the present invention.
Specific embodiment
Below with specific embodiment, the present invention is furture elucidated.
Embodiment 1
The present embodiment provides a kind of p-type MWT battery structure of passivation contact, structure is as shown in Figure 1, include P-type silicon substrate, p-type
The silicon substrate back side is followed successively by P-type silicon 1, silicon dioxide layer 2, phosphorous doped polysilicon layer 3, silicon nitride layer 4 and setting nitrogen by interior outward
First metal 5 of SiClx layer surface, the first metal 5 penetrate silicon nitride layer, contact with phosphorous doped polysilicon layer 3, silicon nitride layer surface
It is covered with the second metal 6, and the second metal does not penetrate silicon nitride layer 4；P-type silicon substrate light-receiving surface is set gradually outward by interior as P
Type silicon 1, P-type silicon surface undope the aluminium oxide/silicon nitride passivation lamination on the P+ layer 7 of boron and the P-type silicon surface for the boron that undopes
8；Aluminium oxide/silicon nitride passivation lamination the light-receiving surface for the boron that undopes is provided with metal negative electrode 9, metal negative electrode passes through battery
The hole of upper setting is covered on metal negative electrode above silicon nitride layer around through cell backside.
P-type silicon substrate light-receiving surface undopes boron processing step: P-type wafer laser boring → polishing both surfaces → oxidation forms tunnel
Wear oxide layer → backside deposition p-doped polysilicon layer → HCl/HF cleaning → phosphorus diffusion → HF/HNO3Solution etches light-receiving surface is more
Crystal silicon → cleaning, making herbs into wool → backside deposition silicon nitride → front deposition aluminum oxide/silicon nitride stack film → silk-screen printing gold
Categoryization.Concrete operations require as follows: laser pore size 130um, and polishing removes P-type silicon layer 4um, silicon oxide thickness 1.2nm, p-doped
Polysilicon thickness 50nm, HF/HCl clean 6min, phosphorus diffusion sheet resistance 90ohm/sqr, HF/HNO3It etches light-receiving surface and removes silicon
0.3um, cleaning and texturing form pyramid size 3um, backside deposition silicon nitride thickness 120nm, front deposition of aluminium oxide thickness
10nm, the silicon nitride thickness 60nm of lamination, back up the first metal piercing silicon nitride layer, with phosphorous doped polysilicon above aluminium oxide
Layer contact, then silicon nitride layer surface printing is covered with the second metallic aluminium, and front light-receiving surface prints silver metal.
Embodiment 2
The present embodiment provides a kind of p-type MWT battery structure of passivation contact, structure is as shown in Figure 1, include P-type silicon substrate, p-type
The silicon substrate back side is followed successively by P-type silicon 1, silicon dioxide layer 2, phosphorous doped polysilicon layer 3, silicon nitride layer 4 and setting nitrogen by interior outward
First metal 5 of SiClx layer surface, the first metal 5 penetrate silicon nitride layer, contact with phosphorous doped polysilicon layer 3, silicon nitride layer surface
It is covered with the second metal 6, and the second metal does not penetrate silicon nitride layer 4；P-type silicon substrate light-receiving surface is set gradually outward by interior as P
Aluminium oxide/the silicon nitride stack 8 on 7 surface of type silicon 1, the P+ layer 7 of P-type silicon surface doping boron and P+ layer；In aluminium oxide/nitridation
Silicon passivation stack light-receiving surface is provided with metal negative electrode 9, and metal negative electrode is carried on the back by the hole being arranged on battery around through battery
Face is covered on metal negative electrode above silicon nitride layer.
P-type silicon substrate light-receiving surface adulterates boron processing step: P-type wafer laser boring → polishing both surfaces → oxidation forms tunnelling
Oxide layer → backside deposition p-doped polysilicon layer → HCl/HF cleaning → phosphorus diffusion → etching light-receiving surface polysilicon → cleaning, system
Suede → backside deposition masking boron diffusion film layer → cleaning removal boron diffusion BSG → backside deposition silicon nitride → front deposition three
Al 2 O/silicon nitride stack film → screen-printed metallization；Concrete operations require as follows: laser pore size 130um, polishing are gone
Except P-type silicon layer 6um, silicon oxide thickness 1.6nm, phosphorous doped polysilicon thickness 80nm, HF/HCl clean 8min, phosphorus diffusion sheet resistance
130ohm/sqr, HF/HNO3It etches light-receiving surface and removes silicon 0.7um, cleaning and texturing forms pyramid size 5.5um, backside deposition
Silica boron diffusion mask film, thicknesses of layers 30nm, HF/HCl clean diffused layer of boron BSG, scavenging period 5min, backside deposition nitrogen
SiClx thickness 100nm, front deposition of aluminium oxide thickness 10nm, the silicon nitride thickness 60nm of lamination, back up above aluminium oxide
First metal piercing silicon nitride layer, contacts with phosphorous doped polysilicon layer, and then silicon nitride layer surface printing is covered with the second metallic aluminium,
Front printing silver metal.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
It for member, without departing from the principle of the present invention, can also make several improvements, these improvement also should be regarded as of the invention
Protection scope.
Claims (5)
1. a kind of p-type MWT battery structure of passivation contact, including P-type silicon substrate, it is characterised in that:
The P-type silicon substrate back side is followed successively by P-type silicon, silicon dioxide layer, phosphorous doped polysilicon, silicon nitride layer outward and is set by interior
First metal on the silicon nitride layer surface is set, the first metal piercing silicon nitride layer contacts, institute with phosphorous doped polysilicon layer
It states silicon nitride layer surface and is covered with the second metal, and second metal does not penetrate silicon nitride；
The P-type silicon substrate light-receiving surface is set gradually outward by interior as P-type silicon, the P+ layer of P-type silicon surface doping boron and P+ layers
The aluminium oxide on surface/silicon nitride stack film；
The aluminium oxide/silicon nitride passivation stack surface light-receiving surface is provided with metal negative electrode, the metal negative electrode is logical
The hole being arranged on battery is crossed around through cell backside, is covered on the metal negative electrode above silicon nitride layer.
2. the p-type MWT battery structure of passivation contact according to claim 1, it is characterised in that: the silicon dioxide layer
With a thickness of 0.5-2nm；The phosphorous doped polysilicon layer is with a thickness of 10-100nm；The silicon nitride layer is with a thickness of 50-200nm；It is described
Boron-doped p+ is with a thickness of 100-600nm.
3. the p-type MWT battery structure of passivation contact according to claim 1, it is characterised in that: first metal is silver
Metal, second metal are aluminum metal.
4. the preparation method of the p-type MWT battery structure of passivation contact according to claim 1, it is characterised in that: the P
Type silicon substrate light-receiving surface undopes boron processing step:
P-type wafer laser boring → polishing both surfaces → oxidation formed tunnel oxide → backside deposition p-doped polysilicon layer →
HCl/HF cleaning → phosphorus diffusion → HF/HNO3Solution etches light-receiving surface polysilicon → cleaning, making herbs into wool → backside deposition silicon nitride →
Front deposition aluminum oxide/silicon nitride stack film → screen-printed metallization；
Concrete operations require as follows: laser pore size 100-200um, polishing removal P-type silicon layer 2-6um, silicon oxide thickness 0.5-
2nm, phosphorous doped polysilicon thickness 10-100nm, HF/HCl clean 2-10min, phosphorus diffusion sheet resistance 80-150ohm/sqr, HF/HNO3
It etches light-receiving surface and removes silicon 0.1-1um, cleaning and texturing forms pyramid size 0.5-6um, backside deposition silicon nitride thickness 50-
150nm, front deposition of aluminium oxide thickness 1-20nm, the silicon nitride thickness 50-80nm of lamination, back up above aluminium oxide
One metal piercing silicon nitride layer, contacts with phosphorous doped polysilicon layer, and then silicon nitride layer surface printing is covered with the second metallic aluminium, just
Face light-receiving surface prints silver metal.
5. the preparation method of the p-type MWT battery structure of passivation contact according to claim 1, it is characterised in that: the P
Type silicon substrate light-receiving surface adulterate boron processing step: P-type wafer laser boring → polishing both surfaces → oxidation formed tunnel oxide →
The polysilicon layer of backside deposition p-doped → HCl/HF cleaning → phosphorus diffusion → etching light-receiving surface polysilicon → cleaning, the making herbs into wool → back side
The film layer of deposition masking boron diffusion → cleaning removal boron diffusion BSG → backside deposition silicon nitride → three oxidation two of front deposition
Aluminium/silicon nitride stack film → screen-printed metallization；Concrete operations require as follows: laser pore size 100-200um, polishing removal
P-type silicon layer 2-6um, silicon oxide thickness 0.5-2nm, phosphorous doped polysilicon thickness 10-100nm, HF/HCl clean 2-10min, and phosphorus expands
Dissipate sheet resistance 80-150ohm/sqr, HF/HNO3It etches light-receiving surface and removes silicon 0.1-1um, cleaning and texturing forms pyramid size 0.5-
6um, backside deposition silica boron diffusion mask film, thicknesses of layers 10-50nm, HF/HCl clean diffused layer of boron BSG, scavenging period
2-5min, backside deposition silicon nitride thickness 50-150nm, front deposition of aluminium oxide thickness 1-20nm, the nitrogen of lamination above aluminium oxide
SiClx thickness 50-80nm, the first metal piercing silicon nitride layer contact, then silicon nitride layer surface printing with phosphorous doped polysilicon layer
It is covered with the second metallic aluminium, front printing silver metal.
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| CN114937717A (en) * | 2022-05-30 | 2022-08-23 | 江苏日托光伏科技股份有限公司 | Preparation method of perovskite-HBC laminated double-sided battery |
| CN117276414A (en) * | 2023-11-23 | 2023-12-22 | 苏州腾晖光伏技术有限公司 | Preparation method and system of P-type efficient passivation contact battery |
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