CN205564769U - P type crystalline silicon solar cells with transparent electrode - Google Patents
P type crystalline silicon solar cells with transparent electrode Download PDFInfo
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Abstract
The utility model discloses a P type crystalline silicon solar cells with transparent electrode from top to bottom includes in proper order: positive metal electrode, positive transparent conducting film, positive antireflection coating passive film, N type layer, P type silicon substrate and back electrode, the front electrode does N type layer surface have local heavy doping N+ district according to the regular pattern shaping, positive transparent conducting film and local heavy doping N+ district direct contact, positive transparent conducting film connects into local heavy doping N+ district and positive metal electrode into the front electrode. This battery adopts front or the back transparent electrode as solar cell with silicon substrate local contact's transparent conducting film, is favorable to transparent conducting film and the good ohmic contact of silicon substrate formation.
Description
Technical field
This utility model belongs to technical field of solar batteries, particularly to a kind of P-type crystal silicon solaode with transparency electrode.
Background technology
From first piece of solaode in 1954 since being born in AT&T Labs, crystal silicon solar energy battery is widely used, and conversion efficiency constantly promotes, production cost continuous decrease.At present, crystal silicon solar energy battery accounts for more than the 80% of solaode overall global market, the product line conversion efficiency of crystalline silicon battery plate has broken through 20% the most, whole world year adding new capacity about 50GW and speedup are obvious, constantly reduce with the degree electricity cost of thermal power generation, be expected to maintain an equal level therewith in the coming years.Crystal silicon solar energy battery highlights in the important function of the aspects such as ambient pressure of restructuring the use of energy, alleviate day by day as a kind of clean energy resource.
Crystal silicon solar energy battery wants to continue to keep competitiveness, obtain bigger development and application, it is necessary to improves conversion efficiency further, reduces production cost simultaneously.The sensitive surface electrode of crystal silicon cell uses the mode of silver slurry silk screen printing to form nearly hundred thin grid and some main grids at present, the Material Cost that this operation uses is expensive, and silver electrode can cause the area on cell piece surface 5%～7% to be formed to block light, greatly reduce the conversion efficiency of cell piece.
How to be balanced between reducing shading-area and keeping good electric conductivity, be an emphasis of crystal silicon cell technical research in recent years.Due to the progress of Size Technology Yu printing technology, the thin grid width of sensitive surface electrode of crystal silicon cell constantly reduces, and predicts according to SEMI, and the width to the thin grid of the year two thousand twenty will be reduced to less than 35 microns, and main grid uses many main grids and without main grid simultaneously.During this grid line refinement technology, the shading-area of electrode has declined, and electric conductivity has promoted, and obtains the lifting of efficiency and the decline of cost simultaneously.But along with the continuous reduction of grid line width, technology difficulty prepared by electrode continues to increase, improve efficiency, the reduced space of reduction production cost further.
Nesa coating has good light transmission and electric conductivity simultaneously, is the ideal material of electrode of solar battery, and the light being expected to thoroughly solve metal electrode blocks and Cost Problems.Although the application that nesa coating is in thin film and heterojunction solar battery is the most highly developed, but apply in the crystal silicon solar energy battery of the market mainstream rare, its main cause be poor with the matching of existing technique, contact resistance is more high.So, promotion nesa coating application in main flow crystal silicon solar energy battery is one of focus of future studies as early as possible.
Utility model content
The purpose of this utility model there is provided a kind of P-type crystal silicon solaode with transparency electrode, this solaode uses with the nesa coating of silicon substrate localized contact as the front of solaode or backing transparent electrode, partial contact zones is heavy doping, forms good Ohmic contact with beneficially nesa coating and silicon substrate.
For achieving the above object, this utility model is by the following technical solutions:
A kind of P-type crystal silicon solaode with transparency electrode, includes the most successively: front metal electrode, front transparent conducting film, front surface antireflection film/passivating film, N-type layer, P-type silicon matrix and backplate；Described N-type layer front is provided with the heavy doping N+ district, local arranged according to regular pattern, described front transparent conducting film directly contacts with heavy doping N+ district, local, and heavy doping N+ district, local and front metal electrode are connected to become front side conductive assembly by front transparent conducting film；Described backplate is aluminum back surface field electrode, localized contact electrode or backing transparent electrode.
Backing transparent electrode includes backing transparent conducting film, the P-type silicon matrix back side is disposed with heavy doping P+ district, local, backside passivation film, backing transparent conducting film and the back metal electrode arranged according to regular pattern, back metal electrode is positioned on backing transparent conducting film, backing transparent conducting film directly contacts with heavy doping P+ district, local, and heavy doping P+ district, local and back metal electrode are connected to become backplate by backing transparent conducting film.
Locally the sheet resistance in heavy doping N+ district and heavy doping P+ district, local is 5～50 Ω/.
Locally heavy doping N+ district and heavy doping P+ district, local all use array pattern to arrange, and its pattern is one-dimensional, two-dimentional geometric figure or one-dimensional and two-dimentional geometric figure combination；One-dimensional geometric figure is selected from: line segment, phantom line segments, camber line or grid line shape；Two-dimentional geometric figure is selected from: circle, ellipse, spindle, annular, polygon, polygon or sector.
Described one-dimensional geometric live width is 30～100um, a length of 0.05～1.5mm；It is 0.5～2mm with two linear spacing adjacent in a line, is 0.5～2mm with two linear spacing adjacent in string；The size of described two-dimentional geometric figure is 30～200um, and adjacent two centre of figures are away from for 0.8～2mm.
Front passivating film is that one or more laminations in aluminium oxide, silicon oxide, non-crystalline silicon are constituted, and thickness is 5～50nm；Front surface antireflection film is that one or more laminations in silicon nitride, silicon oxide, silicon oxynitride, titanium oxide, carborundum are constituted, and antireflective coating integral thickness is 50～100nm；The passivating film at the back side is that one or more laminations in silicon nitride, silicon oxide, non-crystalline silicon, silicon oxynitride are constituted, and passivating film integral thickness is 5～50nm.
Nesa coating is that one or more laminations in ito thin film, AZO thin film, GZO thin film, FTO thin film, IWO thin film and graphene film are constituted；The thickness of nesa coating is 50～500nm.
The described monocrystal silicon that P-type silicon matrix is p-type or p-type polysilicon.
Described P-type silicon front side of matrix or back surface are pyramid, inverted pyramid or Nano/micron loose structure.
Metal electrode is silver electrode, aluminum electrode, nickel electrode, copper electrode, alloy electrode or metal composite electrode；The arrangement pattern of metal electrode is one group of parallel segment or the combination organizing parallel segment more, and the width of line segment is 20～2000um, and quantity is 5～100, and line length is 2～156mm, and the distance between adjacent segments is 0.5～50mm.
Compared with prior art, this utility model has a following useful technique effect:
The P-type crystal silicon solar battery structure with transparency electrode of the present utility model, use with the nesa coating of silicon substrate localized contact as the front of solaode or/and backing transparent electrode, and by being used for turning on electric current and being easy to making set of cells metal electrode at electrically conducting transparent film production.Partial contact zones is heavy doping, forms good Ohmic contact with beneficially nesa coating and silicon substrate.This utility model uses nesa coating that the metal electrode on the local heavily doped region on silicon chip top layer and nesa coating is combined into one can be overall as the conduction of p-type crystal silicon battery electrode, the light-receiving area making cell piece adds 4%～7%, maintain the electric conductivity that electrode is good, make the conversion efficiency of crystal silicon cell be obviously improved.This utility model makes metal (silver, copper, aluminum, the nickel etc.) usage amount of making electrode of solar battery be greatly reduced, even can not use metal, avoid metal electrode light and block the power loss caused, well balance the dilemma that crystal silicon electrode light blocks between electric conductivity, make the conversion efficiency of battery promote, production cost reduce.
A kind of P-type crystal silicon solar battery structure formation technology with transparency electrode that this utility model provides, adulterated by laser die sinking, secondary spreads, ion implanting, mask etching, the methods such as adulterant coating (can be grid line shape at the front and back of crystal silicon chip by specific figure, spotted array, line segment shape array and other shapes) form local heavy doping, nesa coating directly contacts with silicon substrate at heavily doped region, metal electrode is positioned on nesa coating, heavily doped region and metal electrode are connected to become one by nesa coating can be as the electrically conducting transparent assembly of P-type crystal silicon battery front side and/or backplate.Thin grid of metal that localized contact nesa coating described in the utility model can substitute P-type crystal silicon electrode of solar battery and main grid, or substitute thin grid line in the case of optimizing main grid.
Accompanying drawing explanation
Fig. 1 is the nesa coating rear side local contact battery generalized section as front electrode；
Fig. 2 is that nesa coating is as front, the rear side local contact battery generalized section of backplate；
Fig. 3 is the nesa coating aluminum back surface field battery generalized section as front electrode；
Fig. 4 is point-like local heavy doping distribution schematic diagram；
Fig. 5 is line segment shape local heavy doping distribution schematic diagram.
Wherein, 1, locally heavy doping N+ district, 2, front transparent conducting film, 3, front surface antireflection film/passivating film, 4, N-type layer, 5, P-type silicon matrix, 6, backside passivation film, 7, aluminum back surface field, 8, localized contact metal electrode, 9, passivating film, 10, backing transparent conducting film, 11, locally heavy doping P+ district, 12, back metal electrode, 13, front metal electrode, 14, rear-face contact metal electrode.
Detailed description of the invention
Below in conjunction with the accompanying drawings this utility model is described further.
A kind of P-type crystal silicon solar battery structure with transparency electrode of the present utility model, use with the nesa coating of silicon substrate localized contact as the front of solaode or backing transparent electrode, partial contact zones is heavy doping, forms good Ohmic contact with beneficially nesa coating and silicon substrate.Local heavy doping is formed in the front of crystal silicon chip or the back side by specific figure (can be grid line shape, spotted array, line segment shape array and other shapes) by methods such as laser die sinking doping, secondary diffusion, ion implanting, mask etching, adulterant coatings, nesa coating directly contacts with silicon substrate at heavily doped region, metal electrode is positioned on nesa coating, and heavily doped region and metal electrode are connected to become one by nesa coating can be as the electrically conducting transparent assembly of P-type crystal silicon battery electrode.The battery structure that nesa coating localized contact of the present utility model has transparency electrode includes conventional aluminum back surface field battery, rear side local contact battery, double-side cell etc., the thin grid of metal and the main grid of conventional solar cell electrode can be substituted, or substitute thin grid line in the case of optimizing main grid.
As it is shown in figure 1, the P-type crystal silicon rear side local contact solar battery structure with transparency electrode includes from top to bottom: front metal electrode 13, front transparent conducting film 2, front surface antireflection film/passivating film 3, N-type layer 4, P-type silicon matrix 5 and backplate；Described N-type layer surface 2 forms heavy doping N+ district 1, local according to regular pattern, described front transparent conducting film 2 directly contacts with heavy doping N+ district 2, local, front metal electrode 13 is positioned on nesa coating 2, and heavily doped region 1 and metal electrode 13 are connected to become front electrode by nesa coating 2.Backplate includes backside passivation film 6, aluminum back surface field 7 and local contacting metal electrode 8, described backside passivation film 6 is arranged on the back side of P-type silicon matrix 5, aluminum back surface field 7 is arranged in backside passivation film 6, and aluminum back surface field 7 contacts through backside passivation film 6 with P-type silicon matrix 5, contact with P-type silicon matrix 5 in localized contact metal electrode 8 is arranged on aluminum back surface field 7 and through passivating film 6.
Wherein localized contact back electrode can also be backing transparent electrode, sees Fig. 2.Described cell back field includes back side antireflective coating/passivating film 9, backing transparent conducting film 10 and back metal electrode 12；P-type silicon matrix 5 back side forms heavy doping P+ district 11, local according to regular pattern, backing transparent conducting film 10 directly contacts with P-type silicon matrix 5, back metal electrode is positioned on backing transparent conducting film, and heavy doping P+ district, local 11 and metal electrode 12 are connected to become backplate by backing transparent conducting film 10.
There is the P-type crystal silicon rear side local contact preparation method of solar battery of transparency electrode as follows:
(1) P-type crystal silicon chip being carried out surface-texturing process, silicon chip can be p type single crystal silicon sheet and polysilicon chip, and texture processes can use the methods such as chemical liquid burn into plasma etching, metal catalytic, laser ablation.
(2) using phosphorus source as impurity, making the even impurities layer forming 40～100 Ω/, phosphorus source can use POCl3、PH3, phosphorus slurry etc., the manufacture method of impurity layer can use normal pressure diffusion, low pressure diffusion, ion implanting, phosphorous slurry coating etc..
(3) being etched away dead layer and back of the body knot, the method for etching can use wet etching, dry etching.
(4) deposit or grow 5～50nm passivating films respectively and the antireflective coating of 50～about 90nm, passivating film and antireflective coating can be silicon oxide, aluminium oxide, silicon nitride, silicon oxynitride, non-crystalline silicon, carborundum, titanium oxide etc. at front and back.
(5) forming local heavy doping by specific figure in the front of silicon chip or the back side, heavy doping figure can be grid line shape, spotted array, line segment shape array and other figures.Wherein, grid threadlike graph can be any sensitive surface electrode template pattern producing and using in reality；The diameter of dot pattern is between 50～200um, and spacing between points is between 0.8～2mm；The live width of line segment shape pattern is between 40～100um, and length is between 0.05～1.5mm, and line segment is 0.5～2mm in the spacing of X, Y-direction.Forming the heavily doped method in local can use second heat diffusion, laser die sinking doping, local ion implanting, mask to anti-carve erosion, adulterant local coating etc., correspondingly, locally heavy doping can complete in the operation forming PN junction, can also complete in the operation of etch cleaner, it is also possible to complete with laser doping simultaneously.
(6) nesa coating is made in front or the back side, nesa coating can be ITO (indium tin oxide), AZO (Al-Doped ZnO), FTO (fluorine doped tin oxide), IWO (tungsten-doped indium oxide), Graphene, GZO (gallium-doped zinc oxide) etc., the method made can use sputtering, printing, vapour deposition, spraying, spin coating etc., and the THICKNESS CONTROL of nesa coating is 100～500nm.Nesa coating directly contacts formation at heavily doped region with silicon substrate can be as the electrically conducting transparent assembly of p-type crystal silicon battery electrode.
(7) on nesa coating, front and back metal electrode is prepared again.
As it is shown on figure 3, the P-type crystal sial back surface field solar battery structure with transparency electrode that this utility model provides includes from top to bottom: front transparent conducting film 2, front surface antireflection film/passivating film 3, N-type layer 4, P-type silicon matrix 5 and backplate；Described N-type layer surface 2 forms heavy doping N+ district 1, local according to regular pattern, and described front transparent conducting film 2 directly contacts with heavy doping N+ district 2, local, and heavy doping N+ district, local 1 is connected to become front electrode by front transparent conducting film 2.Described backplate includes that aluminum back surface field 7 and rear-face contact metal electrode 14, described rear-face contact metal electrode 14 are arranged in aluminum back surface field 7 and form Ohmic contact through aluminum back surface field 7 and P-type silicon matrix 5.
A kind of have the P-type crystal sial back surface field preparation method of solar battery of transparency electrode as follows:
(1) P-type crystal silicon chip being carried out surface-texturing process, silicon chip can be p type single crystal silicon sheet and polysilicon chip, and texture processes can use the methods such as chemical liquid burn into plasma etching, metal catalytic, laser ablation.
(2) using phosphorus source as impurity, making the even impurities layer forming 40～100 Ω/, phosphorus source can use POCl3、PH3, phosphorus slurry etc., the manufacture method of impurity layer can use normal pressure diffusion, low pressure diffusion, ion implanting, phosphorous slurry coating etc..
(3) being etched away dead layer and back of the body knot, the method for etching can use wet etching, dry etching.
(4) passivating film and the antireflective coating of 50～about 90nm of 5～about 50nm is successively deposited in front, passivating film and antireflective coating can be silicon oxide, silicon nitride, silicon oxynitride, non-crystalline silicon, carborundum, titanium oxide etc., and the method for deposition can use PECVD, LPCVD, ALD etc.；
(5) forming local heavy doping by specific figure in the front of silicon chip, heavy doping figure can be grid line shape, spotted array, line segment shape array and other figures.Wherein, grid threadlike graph can be any sensitive surface electrode template pattern producing and using in reality；As shown in Figure 4, the diameter of dot pattern is between 50～200um, and spacing between points is between 0.8～2mm；As it is shown in figure 5, the live width of line segment shape pattern is between 40～100um, length is between 0.05～1.5mm, and line segment is 0.5～2mm in the spacing of X, Y-direction.Forming the heavily doped method in local can use second heat diffusion, laser die sinking doping, local ion implanting, mask to anti-carve erosion, adulterant local coating etc., correspondingly, locally heavy doping can complete in the operation forming PN junction, can also complete in the operation of etch cleaner, it is also possible to complete with laser doping simultaneously.
(6) backplate is made.Manufacture method can use silk screen printing, physical vapour deposition (PVD) PVD etc., and backplate can be the metals such as silver, aluminum.
(7) nesa coating is made in front, nesa coating can be ITO (indium tin oxide), AZO (Al-Doped ZnO), FTO (fluorine doped tin oxide), IWO (tungsten-doped indium oxide), Graphene, GZO (gallium-doped zinc oxide) etc., the method made can use sputtering, print, spray, spin coating, vapour deposition etc., the THICKNESS CONTROL of nesa coating is 100～500nm.Making front metal electrode again on front transparent conducting film, front transparent conducting film directly contacts with silicon substrate at heavily doped region, and local heavily doped region and front metal electrode are connected to become conductive composition body.
Below in conjunction with specific embodiment, preparation method of the present utility model is described in detail:
Embodiment 1:
(1) by the incorgruous corrosion in the KOH solution of about 80 DEG C of p type single crystal silicon sheet, it is thus achieved that surface pyramid structure；
(2) with POCl3As impurity, diffuse to form the uniform diffusion layer of 80 Ω/ at about 800 DEG C；
(3) wet etching is used to remove phosphorosilicate glass and back of the body knot；
(4) silicon oxide and the silicon nitride of about 80nm of about 5nm is successively deposited in front；
(5) aluminium oxide and the silicon nitride of about 80nm of about 30nm are successively deposited overleaf；
(6) printing phosphorous adulterant and boron doped agent at front and back respectively by special pattern, printed pattern uses spotted array, and a diameter of 50um of a single point, spacing between points is 0.8mm；
(7) use laser, by the special pattern described in step (6), adulterant is carried out PULSE HEATING, make the phosphorus atoms in front and the boron atom at the back side spread to silicon substrate through antireflective coating and passivating film, form the local heavily doped region of spotted array in the front of silicon chip with the back side；
(8) use the AZO nesa coating that sputtering method prepares 100nm respectively at front and the back side, then on front transparent conducting film and backing transparent conducting film, make front silver electrode and back silver electrode respectively；Front, back silver electrode pattern are made up of the grid line of 1 group of equidistant parallel, and grid line quantity is 20, and grid line width is 20um.Front transparent conducting film directly contacts with silicon substrate at heavily doped region with backing transparent conducting film, and local heavily doped region and silver electrode are connected to become can be as the conductive composition body in p-type crystal silicon battery front Yu backplate.
Embodiment 2:
(1) nano-metal particle catalytic chemistry is used to be etched on the surface of p type single crystal silicon sheet formation inverted pyramid structure；
(2) with PH3As impurity, the method for ion implanting is used to form the uniform diffusion layer of 90 Ω/；
(3) wet etching is used to remove dead layer and back of the body knot；
(4) at the silicon oxynitride of front deposition about 80nm
(5) aluminium oxide of about 30nm is deposited overleaf；
(6) use laser that pellumina carries out perforate overleaf, then use the method for evaporation to prepare backplate, and make annealing treatment；
(7) press the adulterant that special pattern spraying is phosphorous in front, spraying figure uses spotted array, and a diameter of 100um of a single point, spacing between points is 1.5mm；
(8) use laser, by the special pattern described in step (7), adulterant is carried out PULSE HEATING, make phosphorus atoms pass antireflective coating and spread to silicon substrate, form the local heavily doped region of spotted array at front side of silicon wafer；
(9) use the transparent conducting film that sputtering method prepares 150nm in front, then on front transparent conducting film, make front silver electrode；Silver electrode is made up of the thin grid line of one group of equidistant parallel and the main gate line of one group of equidistant parallel, and thin grid line intersects vertically with main gate line.Thin grid line is 30, and cross-sectional width is 30um；Main grid is 4, and cross-sectional width is 1mm.Front transparent conducting film directly contacts with silicon substrate at heavily doped region, and local heavily doped region and silver electrode are connected to become can be as the conductive composition body of p-type crystal silicon battery front electrode.
Embodiment 3:
(1) by p-type polysilicon sheet in HF/HNO3Solution system in corrode, it is thus achieved that surface texture；
(2) with POCl3As impurity, diffuse to form the uniform diffusion layer of 40 Ω/ at about 800 DEG C；
(3) spraying mask by specific figure on the diffusion layer in front, mask pattern uses line segment shape array, and a length of 50um of line segment, width is 40um, and the spacing between line segment and line segment is 0.5mm；
(4) use wet etching to remove phosphorosilicate glass, mask and back of the body knot, form heavy doping in the region being sprayed with mask, formed in the region not spraying mask and be lightly doped；
(5) at the silicon oxide of front deposition about 90nm；
(6) method using evaporation makes back electrode, and makes annealing treatment；
(7) method using mask and chemical agent corrosion carries out perforate by the array pattern described in step (3) to front silicon oxide；
(8) use the IWO nesa coating that sputtering method prepares 100nm in front, then on front transparent conducting film, make front silver electrode；Silver electrode is made up of 10 groups of equidistant parallel grid lines being parallel to each other, and often group grid line is 30, and cross-sectional width is 20um, and the spacing between the parallel grid line of two adjacent groups is 2mm.Front transparent conducting film directly contacts with silicon substrate at heavily doped region, and local heavily doped region and silver electrode are connected to become can be as the conductive composition body in p-type crystal silicon battery front.
Embodiment 4:
(1) method using chemical attack and RIE dry etching obtains texture on the surface of p-type polysilicon sheet；
(2) at front side of silicon wafer by the phosphorous slurry of specific graphic printing, printed pattern is line segment shape array, a length of 1.5mm of line segment, and width is 100um, and the spacing between line segment and line segment is 2mm；
(3) in diffusion furnace, POCl it is passed through3Carry out low pressure diffusion, form heavy doping in the region of printing phosphorus slurry, formed in the region not printing phosphorus slurry and be lightly doped；
(4) wet etching is used to remove phosphorosilicate glass and the back of the body knot on surface；
(5) at the silicon oxynitride of front deposition about 90nm；
(6) method using silk screen printing makes back electrode, and carries out heat treatment；
(7) laser is used to remove the antireflective coating in heavily doped region by the array pattern described in step (2)；
(8) use chemical gaseous phase to be deposited on the graphene transparent conductive film of front deposition 80nm, then on front transparent conducting film, be allocated as front silver electrode；Silver electrode is made up of the thin grid line of one group of equidistant parallel and the main gate line of one group of equidistant parallel, and thin grid line intersects vertically with main gate line.Thin grid line is 10, and cross-sectional width is 40um；Main grid is 5, and cross-sectional width is 1mm.Front transparent conducting film directly contacts with silicon substrate at heavily doped region, and local heavily doped region and silver electrode are connected to become can be as the conductive composition body of P type crystal silicon battery front electrode.
Embodiment 5:
(1) by p-type polysilicon sheet in HF/HNO3Solution system in corrode, it is thus achieved that surface texture；
(2) with POCl3As impurity, diffuse to form the uniform diffusion layer of 40 Ω/ at about 800 DEG C；
(3) spraying mask by specific figure on diffusion layer, mask pattern is grid line shape, and thin grid are made up of the equidistant parallel lines that 100 width are about 30um, and main grid is made up of the equidistant parallel lines that 5 width are 1mm, and thin grid intersect vertically with main grid.
(4) use wet etching to remove phosphorosilicate glass, mask and back of the body knot, form heavy doping in the region being sprayed with mask, formed in the region not spraying mask and be lightly doped；
(5) at the silicon nitride of front deposition about 80nm；
(6) method using mask and chemical agent corrosion is removed the antireflective coating of heavily doped region by the figure described in step (3)；
(7) using sputtering method at the GZO nesa coating of front deposition 200nm, this nesa coating directly contacts the front electrode forming battery with the silicon substrate in heavily doped district.
Embodiment 6:
(1) method using chemical attack and RIE dry etching obtains texture on the surface of p-type polysilicon sheet；
(2) phosphorus dopant is contained at front side of silicon wafer by the spraying of specific figure, spraying figure is grid line shape, thin grid are made up of the equidistant parallel lines that 80 width are about 60um, and main grid is made up of the equidistant parallel lines that 3 width are 1.5mm, and thin grid intersect vertically with main grid.
(3) in diffusion furnace, POCl it is passed through3Carry out normal pressure diffusion, form heavy doping in the region of spraying phosphorus dopant, formed in the region not spraying phosphorus dopant and be lightly doped；
(4) wet etching is used to remove phosphorosilicate glass and the back of the body knot on surface；
(5) at the silicon oxynitride of front deposition about 80nm；
(6) method using evaporation makes back electrode, and makes annealing treatment；
(7) laser is used to remove the antireflective coating of thin palisade heavily doped region by the figure described in step (2)；
(8) use sputtering method at the AZO nesa coating of front deposition 100nm；
(9) laser is used to remove antireflective coating and the conducting film of main grid shape heavily doped region by the figure described in step (2)；Metal electrode is made, with the front electrode that nesa coating and the metal electrode of heavily doped region localized contact collectively form crystal silicon battery at front main grid shape heavily doped region.
A kind of P-type crystal silicon solar battery structure with transparency electrode of this utility model, use with the nesa coating of silicon substrate localized contact as the front of solaode and/or backing transparent electrode, partial contact zones is heavy doping, forms good Ohmic contact with beneficially nesa coating and silicon substrate.This utility model makes metal (silver, copper, aluminum, the nickel etc.) usage amount of making electrode of solar battery be greatly reduced, even can not use metal, avoid metal electrode light and block the power loss caused, well balance the dilemma that crystal silicon electrode light blocks between electric conductivity, make the conversion efficiency of battery promote, production cost reduce.
The foregoing is only several embodiments of the present utility model, it is not all of or unique embodiment, the conversion of any equivalence that technical solutions of the utility model are taked by those of ordinary skill in the art by reading this utility model description, is claim of the present utility model and is contained.
Claims (10)
1. a P-type crystal silicon solaode with transparency electrode, it is characterised in that include the most successively: front
Metal electrode (13), front transparent conducting film (2), front surface antireflection film/passivating film (3), N-type layer (4), P-type silicon matrix
And backplate (5)；Described N-type layer (4) front is provided with the heavy doping N+ district, local (1) arranged according to regular pattern,
Described front transparent conducting film (2) directly contacts with heavy doping N+ district, local (1), and front transparent conducting film (2) will local
Heavy doping N+ district (1) and front metal electrode (13) are connected to become front side conductive assembly；Described backplate is aluminum back surface field electricity
Pole, localized contact electrode or backing transparent electrode.
A kind of P-type crystal silicon solaode with transparency electrode the most according to claim 1, it is characterised in that institute
The backing transparent electrode stated includes backing transparent conducting film (10) and back metal electrode (12), and P-type silicon matrix (5) back side depends on
Secondary be provided with according to regular pattern arrange heavy doping P+ district, local (11), backside passivation film (9), backing transparent conducting film (10)
With back metal electrode (12), backing transparent conducting film (10) directly contacts with heavy doping P+ district, local (11), backing transparent
Conducting film (10) locally heavy doping P+ district (11) and back metal electrode (12) will be connected to become back side conductive composition body.
A kind of P-type crystal silicon solaode with transparency electrode the most according to claim 2, it is characterised in that office
The sheet resistance of heavy doping N+ district of portion (1) and heavy doping P+ district, local (11) is 5～50 Ω/.
A kind of P-type crystal silicon solaode with transparency electrode the most according to claim 2, it is characterised in that office
Heavy doping N+ district of portion (1) and heavy doping P+ district, local (11) all use array pattern to arrange, and its pattern is one-dimensional, two-dimentional several
What figure or one-dimensional and two-dimentional geometric figure combination；One-dimensional geometric figure is selected from: line segment, phantom line segments, camber line or grid line shape；Two
Dimension geometric figure is selected from: circle, ellipse, spindle, annular, polygon, polygon or sector.
A kind of P-type crystal silicon solaode with transparency electrode the most according to claim 4, it is characterised in that institute
Stating one-dimensional geometric live width is 30～100um, a length of 0.05～1.5mm；With two linear spacing adjacent in a line it is
0.5～2mm, it is 0.5～2mm with two linear spacing adjacent in string；The size of described two-dimentional geometric figure be 30～
200um, adjacent two centre of figures are away from for 0.8～2mm.
A kind of P-type crystal silicon solaode with transparency electrode the most according to claim 2, it is characterised in that just
Face passivating film is that one or more laminations in aluminium oxide, silicon oxide, non-crystalline silicon are constituted, and thickness is 5～50nm；Front antireflective
Film is that one or more laminations in silicon nitride, silicon oxide, silicon oxynitride, titanium oxide, carborundum are constituted, and antireflective coating entirety is thick
Degree is 50～100nm；The passivating film at the back side is one or more laminations in silicon nitride, silicon oxide, non-crystalline silicon, silicon oxynitride
Constituting, passivating film integral thickness is 5～50nm.
A kind of P-type crystal silicon solaode with transparency electrode the most according to claim 2, it is characterised in that just
It is thin that face nesa coating (2) and backing transparent conducting film (10) are ito thin film, AZO thin film, GZO thin film, FTO
One or more laminations in film, IWO thin film and graphene film are constituted；The thickness of nesa coating is 50～500nm.
A kind of P-type crystal silicon solaode with transparency electrode the most according to claim 2, front metal electrode (13)
It is silver electrode, aluminum electrode, nickel electrode, copper electrode, alloy electrode or metal composite electrode with back metal electrode (12)；Gold
The arrangement pattern belonging to electrode is one group of parallel segment or the combination organizing parallel segment more, and the width of line segment is 20～2000um, quantity
Being 5～100, line length is 2～156mm, and the distance between adjacent segments is 0.5～50mm.
9. according to a kind of P-type crystal silicon solaode with transparency electrode described in claim 1 to 6 any one, its
It is characterised by, described monocrystal silicon or p-type polysilicon that P-type silicon matrix (5) is p-type.
10. according to a kind of P-type crystal silicon solaode with transparency electrode described in claim 1 to 6 any one, its
Being characterised by, described P-type silicon matrix (5) front or back surface are pyramid, inverted pyramid or Nano/micron loose structure.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762205A (en) * | 2016-04-07 | 2016-07-13 | 乐叶光伏科技有限公司 | P-type crystalline silicon solar cell with transparent electrode and manufacturing method thereof |
| CN108695410A (en) * | 2018-06-11 | 2018-10-23 | 苏州宝澜环保科技有限公司 | A kind of N-shaped polysilicon solar cell and its manufacturing method |
-
2016
- 2016-04-07 CN CN201620284787.3U patent/CN205564769U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762205A (en) * | 2016-04-07 | 2016-07-13 | 乐叶光伏科技有限公司 | P-type crystalline silicon solar cell with transparent electrode and manufacturing method thereof |
| CN108695410A (en) * | 2018-06-11 | 2018-10-23 | 苏州宝澜环保科技有限公司 | A kind of N-shaped polysilicon solar cell and its manufacturing method |
| CN108695410B (en) * | 2018-06-11 | 2020-08-04 | 广东德九新能源有限公司 | N-type polycrystalline silicon solar cell and manufacturing method thereof |
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Address after: 710018 Shaanxi Province, Xi'an economic and Technological Development Zone is Jilu No. 8989 A block 6 layer Patentee after: Long base music Photovoltaic Technology Co., Ltd. Address before: 710199 No. 388, middle route, Xi'an, Shaanxi, Changan District Patentee before: LERRI SOLAR TECHNOLOGY CO., LTD. |
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