CN205657063U - Transparent electrically conductive assembly of crystalline silicon solar cells - Google Patents
Transparent electrically conductive assembly of crystalline silicon solar cells Download PDFInfo
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- CN205657063U CN205657063U CN201620285483.9U CN201620285483U CN205657063U CN 205657063 U CN205657063 U CN 205657063U CN 201620285483 U CN201620285483 U CN 201620285483U CN 205657063 U CN205657063 U CN 205657063U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The utility model discloses a transparent electrically conductive assembly of crystalline silicon solar cells, transparent electrically conductive assembly setting the body silicon solar cell the front and/or the back, include: the transparent conducting film of setting on passive film antireflection coating, and set up the metal electrode on transparent conducting film, passive film antireflection coating sets up on the crystal silicon chip, front or the back of crystal silicon chip have local heavy doping district according to the regular pattern shaping, transparent conducting film pierce through passive film antireflection coating and local heavy doping district direct contact, transparent conducting film connects into the transparent electrically conductive assembly into the crystal silicon cell electrode with local heavy doping district and metal electrode. This transparent electrically conductive assembly adopts front or the back transparent electrode as solar cell with silicon substrate local contact's transparent conducting film, and local contact is regional to be heavy doping to be favorable to transparent conducting film and silicon substrate to form good ohmic contact.
Description
Technical field
This utility model belongs to technical field of solar batteries, particularly to a kind of crystal silicon solar energy battery electrically conducting transparent assembly.
Background technology
From first piece of solaode in 1954 since being born in AT&T Labs, crystal silicon solar energy battery has obtained widely should
With, conversion efficiency constantly promotes, production cost continuous decrease.At present, crystal silicon solar energy battery accounts for solaode world market
More than the 80% of total value, the product line conversion efficiency of crystalline silicon battery plate has broken through 20% the most, and whole world year adding new capacity is about
50GW and speedup are obvious, constantly reduce with the degree electricity cost of thermal power generation, are expected to maintain an equal level therewith in the coming years.The crystalline silicon sun
Can day by day highlight in the important function of the aspects such as ambient pressure of restructuring the use of energy, alleviate as a kind of clean energy resource by battery.
Crystal silicon solar energy battery wants to continue to keep competitiveness, obtain bigger development and application, it is necessary to improve conversion effect further
Rate, reduces production cost simultaneously.The sensitive surface electrode of crystal silicon cell uses the mode of silver slurry silk screen printing to form nearly hundred carefully at present
Grid and some main grids, the Material Cost that this operation uses is expensive, and silver electrode can cause the area on cell piece surface 5%～7%
Formed and light is blocked, greatly reduce the conversion efficiency of cell piece.
How to be balanced between reducing shading-area and keeping good electric conductivity, be crystal silicon cell technical research in recent years
One emphasis.Due to the progress of Size Technology Yu printing technology, the thin grid width of sensitive surface electrode of crystal silicon cell constantly reduces, root
Predicting according to SEMI, the width to the thin grid of the year two thousand twenty will be reduced to less than 35 microns, and main grid uses many main grids and without main grid simultaneously.
During this grid line refinement technology, the shading-area of electrode has declined, and electric conductivity has promoted, and obtains efficiency simultaneously
Promote the decline with cost.But along with the continuous reduction of grid line width, technology difficulty prepared by electrode continues to increase, and improves further
Efficiency, the reduced space of reduction production cost.
Nesa coating has good light transmission and electric conductivity simultaneously, is the ideal material of electrode of solar battery, is expected to thoroughly solve
Certainly the light of metal electrode blocks and Cost Problems.Although the application that nesa coating is in thin film and heterojunction solar battery is the most very
Maturation, but apply rare in the crystal silicon solar energy battery of the market mainstream, its main cause is and the matching of existing technique
Poor, contact resistance is more high.So, promoting nesa coating application in main flow crystal silicon solar energy battery as early as possible is future
One of focus of research.
Utility model content
The purpose of this utility model there is provided a kind of crystal silicon solar energy battery electrically conducting transparent assembly, and this electrically conducting transparent assembly is adopted
With with the nesa coating of silicon substrate localized contact as the front of solaode or backing transparent electrode, partial contact zones is attached most importance to
Doping, forms good Ohmic contact with beneficially nesa coating and silicon substrate.
For achieving the above object, this utility model is by the following technical solutions:
A kind of crystal silicon solar energy battery electrically conducting transparent assembly, described electrically conducting transparent assembly is arranged on body silicon solar cell
Front and/or the back side, including: it is arranged on the nesa coating on passivating film/antireflective coating, and the gold being arranged on nesa coating
Belonging to electrode, passivating film/antireflective coating is arranged on crystal silicon chip；Front or the back side of described crystal silicon chip are provided with according to rule
The local heavily doped region that pattern is arranged, described local heavily doped region directly contacts with the nesa coating of correspondence position, electrically conducting transparent
Metal electrode on the local heavily doped region arranged according to regular pattern and nesa coating is connected to become crystal silicon cell electrode by film
Electrically conducting transparent assembly.
Described nesa coating is ito thin film, AZO thin film, GZO thin film, FTO thin film, IWO thin film and Graphene
One or more laminations in thin film are constituted.The thickness of nesa coating is 50～500nm.
Locally heavily doped region uses array pattern arrangement, and its pattern is one-dimensional, two-dimentional geometric figure or one-dimensional and two-dimentional geometric figure
Combination；One-dimensional geometric figure is selected from: line segment, phantom line segments, camber line or grid line shape；Two-dimentional geometric figure is selected from: circular, oval,
Spindle, annular, polygon, polygon or sector.
Described one-dimensional geometric live width is 30～100um, a length of 0.05～1.5mm；With in a line adjacent two linear
Spacing is 0.5～2mm, is 0.5～2mm with two linear spacing adjacent in string.
Described two-dimentional geometric figure X, the length of Y-direction are 30～200um, and adjacent two centre of figures are away from for 0.8～2mm.
Metal electrode on described nesa coating is silver electrode, aluminum electrode, nickel electrode, copper electrode, alloy electrode or metal composite
Electrode；The arrangement pattern of metal electrode is one group of parallel segment or the combination organizing parallel segment more, the width of line segment be 20～
2000um, quantity is 5～100, and line length is 2～156mm, and the distance between adjacent segments is 0.5～50mm.
Described crystal silicon chip is p-type or the polysilicon chip of the monocrystalline silicon piece of N-type, p-type or N-type；Locally heavily doped region
For the heavily doped district of N-type or p-type, heavily doped sheet resistance is 5～50 Ω/.
Described electrically conducting transparent assembly is formed at p-type or the surface of N-type silicon substrate, or is formed at p-type or N-type emitter stage table
Face.
Antireflective coating is the one in silicon nitride film, silicon oxide film, silicon oxynitride film, carborundum films and thin film of titanium oxide
Or multiple lamination is constituted, thickness is 50～100nm.
Passivating film be the one in silicon nitride film, silicon oxide film, silicon oxynitride film, aluminum oxide film and amorphous silicon membrane or
Multiple lamination is constituted, and thickness is 5～50nm.
The preparation method of a kind of crystal silicon solar energy battery electrically conducting transparent assembly, comprises the following steps:
1) method that crystal silicon chip uses the catalysis of chemical liquid burn into plasma etching, nano metal or laser ablation carries out surface
Texturing processes；
2) crystal silicon chip is doped process to form PN junction；
3) local heavily doped region is formed in the front of crystal silicon chip or the back side；The method forming local heavily doped region is:
A) use the method for printing, spraying or 3D printing that adulterant is coated in the antireflective at front side of silicon wafer or the back side by regular figure
On film/passivating film, then use laser to coating adulterant carry out PULSE HEATING, make foreign atom penetrate antireflective coating/passivating film to
Silicon substrate diffuses to form local heavily doped region；Or,
B) press regular figure spray mask at the silicon chip surface through thermal diffusion, then use the method for wet etching to be carried out, cover in spray
The region of film forms local heavy doping；
4) for the local heavy doping formed by b) method, need to prepare antireflective coating/passivating film subsequently, then use laser or chemistry rotten
The method of erosion removes the antireflective coating/passivating film on the heavy doping of local；
5) sputtering, vapour deposition, 3D printing, printing, spraying coating process is used to make electrically conducting transparent on passivating film/antireflective coating surface
Film, the THICKNESS CONTROL of nesa coating is 50～500nm；Metal electrode, the pattern of metal electrode is made again on nesa coating
Being one group of parallel segment or the combination organizing parallel segment, the width of line segment is 20～2000um, and quantity is 5～100, line length more
Being 2～156mm, the distance between adjacent segments is 0.5～50mm.Nesa coating is direct with silicon substrate at heavily doped region
Contact, and local heavily doped region and metal electrode are connected to become conductive composition body.
As further improvement of the utility model, in step a): heavily doped sheet resistance is 5～50 Ω/.
Compared with prior art, this utility model has a following useful technique effect:
This utility model makes making electrode of solar battery be electrically conducting transparent assembly, uses the electrically conducting transparent with silicon substrate localized contact
Film is as the front of solaode or backing transparent electrode, and partial contact zones is heavy doping, with beneficially nesa coating and silicon
Matrix forms good Ohmic contact, and by being used for turning on electric current and being easy to make set of cells metal electricity at electrically conducting transparent film production
Pole.The light-receiving area making cell piece adds 4%～7%, maintains the electric conductivity that electrode is good, makes turning of crystal silicon cell
Change efficiency to be obviously improved.Additionally, the usage amount of metal paste is greatly decreased so that production cost significantly reduces, and it is prone in production
Realize, control.Avoid metal electrode light and block the power loss caused, well balance crystal silicon electrode light and block and electric conductivity
Between dilemma, make the conversion efficiency of battery promote, production cost reduce.
Preparation method of the present utility model is applied by laser die sinking doping, secondary diffusion, ion implanting, mask etching, adulterant
Forming local heavy doping in the front of crystal silicon chip or the back side by specific figure etc. method, in local, heavily doped silicon chip surface makes
Nesa coating, then metal electrode is made on the surface of nesa coating.Nesa coating directly contacts with heavily doped region, and will
Heavily doped region and metal electrode are connected to become one can be as the electrically conducting transparent assembly of crystal silicon cell electrode.Preparation method is simple,
Mass, procedure can be realized.
Accompanying drawing explanation
Fig. 1 is crystal silicon cell generalized section based on front transparent conducting film localized contact electrode；
Fig. 2 is crystal silicon cell generalized section based on backing transparent conducting film localized contact electrode；
Fig. 3 is point-like local heavy doping distribution schematic diagram；
Fig. 4 is line segment shape local heavy doping distribution schematic diagram；
Wherein, 1, nesa coating, 2, passivating film/antireflective coating, 3, locally heavily doped region, 4, crystal silicon chip, 5, metal
Electrode.
Detailed description of the invention
Below in conjunction with the accompanying drawings this utility model is described further.
As depicted in figs. 1 and 2, this utility model one crystal silicon solar energy battery nesa coating localized contact structure, by swashing
The methods such as light die sinking doping, secondary diffusion, ion implanting, mask etching, adulterant coating are at the front of crystal silicon chip 4 or the back side
Local heavy doping 3 is formed, in office by specific figure (can be grid line shape, spotted array, line segment shape array and other shapes)
The heavily doped silicon chip surface in portion makes nesa coating 1, then makes metal electrode 5 on the surface of nesa coating 1.Electrically conducting transparent
Film 1 directly contacts with heavily doped region 3, and heavily doped region 3 and metal electrode 5 are connected to become one can as crystal silicon cell electricity
The electrically conducting transparent assembly of pole.The metal that the electrode that method described in the utility model is formed can substitute conventional solar cell electrode is thin
Grid and main grid, or substitute thin grid line in the case of optimizing main grid.
The method that above-mentioned crystal silicon solar energy battery nesa coating localized contact is formed comprises the steps:
1) crystal silicon chip being carried out surface-texturing process, silicon chip can be p-type and the monocrystalline silicon piece of N-type and polysilicon chip, knits
Structure processes can use the methods such as chemical liquid burn into plasma etching, nano metal catalysis, laser ablation.
2) silicon chip is doped process to form PN junction, the method for doping can use normal pressure diffusion, low pressure diffusion, ion note
Enter, impurity slurry coating etc..
3) carrying out local heavy doping on PN junction by specific figure, heavy doping figure can be grid line shape, spotted array, line segment
Shape array and other figures.Such as Fig. 3 and Fig. 4, shown, the diameter of dot pattern is between 50～200um, between points
Spacing is between 0.8～2mm；The live width of line segment shape pattern between 40～100um, length between 0.05～1.5mm,
Line segment is 0.5～2mm in the spacing of X, Y-direction.Forming the heavily doped method in local can use second heat diffusion, laser to open
Mould doping, local ion implanting, mask anti-carve erosion, adulterant local coating etc., and correspondingly, locally heavy doping can formed
The operation of PN junction completes, it is also possible to complete in the operation of etch cleaner, it is also possible to complete with laser doping simultaneously.
4) making nesa coating in front or the back side, nesa coating can be that ITO (indium tin oxide), AZO (mix aluminum oxidation
Zinc), FTO (fluorine doped tin oxide), IWO (tungsten-doped indium oxide), Graphene, GZO (gallium-doped zinc oxide) etc., the method for making
Can use sputtering, print, spray, vapour deposition etc., the THICKNESS CONTROL of nesa coating is 50～500nm.Lead transparent again
Making metal electrode on electrolemma, metal electrode pattern is one group of parallel segment or the combination organizing parallel segment more, and the width of line segment is
20～2000um, quantity is 5～100, and line length is 2～156mm, and the distance between adjacent segments is 0.5～50mm.Thoroughly
Bright conducting film directly contacts with silicon substrate at heavily doped region, and local heavily doped region and metal electrode are connected to become conductive composition
Body.
Below in conjunction with specific embodiment, preparation method of the present utility model is described in detail:
Embodiment 1:
(1) method using diffusion, forms the uniform expansion of 80 Ω/ in the p type single crystal silicon sheet front processed through surface-texturing
Dissipate layer；
(2) wet etching is used to remove phosphorosilicate glass and back of the body knot；
(3) silicon oxide and the silicon nitride of about 80nm of about 5nm is successively deposited in the front of silicon chip；
(4) press the special pattern phosphorous adulterant of printing in front, printed pattern uses spotted array, a single point a diameter of
50um, spacing between points is 0.8mm；
(5) use laser, by the special pattern described in step (4), adulterant is carried out PULSE HEATING, make phosphorus atoms penetrate anti-reflection
Penetrate film and passivating film to spread to silicon substrate, form the local heavily doped region of spotted array in the front of silicon chip；
(6) use the AZO nesa coating that sputtering method prepares 100nm in front, then on nesa coating, use screen printing
The method of brush makes silver electrode, and silver electrode pattern is made up of the grid line of 1 group of equidistant parallel, and grid line quantity is 20, grid line width
For 20um.AZO nesa coating directly contacts with the silicon substrate in heavily doped district, and the local heavily doped region being distributed by spotted array
And silver grating line electrode be connected to become one can be as the conductive composition body of crystal silicon battery front electrode.
Embodiment 2:
(1) in the p-type polysilicon sheet front processed through surface-texturing by the phosphorous slurry of specific graphic printing, printed pattern
For spotted array, a diameter of 200um of a single point, spacing between points is 2.0mm；
(2) in diffusion furnace, carry out low pressure diffusion, form heavy doping, in the region not printing phosphorus slurry in the region of printing phosphorus slurry
Formation is lightly doped；
(3) wet etching is used to remove phosphorosilicate glass and back of the body knot；
(4) at the silicon oxynitride of the front of silicon chip deposition about 80nm；
(5) laser is used to remove the antireflective coating in heavily doped region, front by the figure described in step (1)；
(6) chemical gaseous phase is used to be deposited on the graphene transparent conductive film that 80nm is prepared in front, then at graphene transparent conductive film
Upper making silver electrode, silver electrode is made up of the thin grid line of one group of equidistant parallel and the main gate line of one group of equidistant parallel, thin grid line and main grid
Line intersects vertically.Thin grid line is 30, and cross-sectional width is 30um；Main grid is 4, and cross-sectional width is 1mm.Graphene is saturating
Bright conducting film directly contacts with the silicon substrate in heavily doped district, and the local heavily doped region and the silver gate-shaped electrode territory that are distributed by spotted array connect
Becoming one can be as the conductive composition body of crystal silicon battery front electrode.
Embodiment 3:
(1) method using ion implanting, is formed with the back side respectively in the n type single crystal silicon sheet front processed through surface-texturing
The uniform diffusion layer of 90 Ω/ and 50 Ω/；
(2) front of Chemical cleaning silicon chip and the back side；
(3) at aluminium oxide and the silicon nitride of about 80nm of front side of silicon wafer successively deposition about 25nm；
(4) at silicon oxide and the silicon nitride of about 80nm of silicon chip back side successively deposition about 25nm；
(5) spraying boron doped agent respectively and containing phosphorus dopant at front and the back side, spraying figure is spotted array, a single point
A diameter of 100um, spacing between points is 1.5mm；
(6) use laser, by the figure described in step (5), adulterant is carried out PULSE HEATING, make boron atom and the back side in front
Phosphorus atoms penetrate antireflective coating and passivating film and spread to silicon substrate, heavily doped in the local of the front of silicon chip and back side formation spotted array
Miscellaneous region；
(7) using the transparent conducting film that sputtering method prepares 150nm respectively at front and the back side, this nesa coating is with heavily doped
The silicon substrate in district directly contacts, and using spotted array be distributed local heavily doped region be connected to become one can be as crystal silicon battery front
Conductive composition body with backplate.
Embodiment 4:
(1) method using diffusion, forms the uniform expansion of 40 Ω/ in the p type single crystal silicon sheet front processed through surface-texturing
Dissipate layer；
(2) on diffusion layer by specific figure spray mask, mask pattern use line segment shape array, a length of 50um of line segment,
Width is 40um, and the spacing between line segment and line segment is 0.5mm；
(3) use wet etching to remove phosphorosilicate glass, mask and back of the body knot, form heavy doping in the region being sprayed with mask, do not having
The region of spray mask is formed and is lightly doped；
(4) at the silicon oxide of front deposition about 80nm；
(5) method using mask and chemical agent corrosion is removed the antireflective of heavily doped region by the figure described in step (2)
Film；
(6) use the IWO nesa coating that sputtering method prepares 200nm in front, then on nesa coating, use ink-jet
Method prepares silver electrode, and silver electrode is made up of 10 groups of equidistant parallel grid lines being parallel to each other, and often group grid line is 30, cross-sectional width
For 20um, the spacing between the parallel grid line of two adjacent groups is 2mm.IWO nesa coating directly contacts with the silicon substrate in heavily doped district,
And the local heavily doped region of line segment shape array distribution and silver grating line electrode are connected to become one can be as crystal silicon battery front electrode
Conductive composition body.
Embodiment 5:
(1) method using diffusion, forms the uniform expansion of 70 Ω/ in the N-type polycrystalline silicon sheet front processed through surface-texturing
Dissipate layer；
(2) wet etching is used to remove Pyrex and back of the body knot；
(3) aluminium oxide and the silicon nitride of about 70nm of about 20nm is successively deposited in the front of silicon chip；
(4) press the adulterant of special pattern spraying boracic in front, spraying figure uses line segment shape array, line segment a length of
1.5mm, width is 100um, and the spacing between line segment and line segment is 2mm；
(5) use laser, by the special pattern described in step (4), adulterant is carried out PULSE HEATING, make boron atom penetrate anti-reflection
Penetrate film and passivating film to spread to silicon substrate, form the local heavily doped region of line segment shape array in the front of silicon chip；
(6) use the FTO nesa coating that sputtering method prepares 200nm in front, then on nesa coating, make silver electrode,
Silver electrode is made up of the thin grid line of one group of equidistant parallel and the main gate line of one group of equidistant parallel, and thin grid line intersects vertically with main gate line.Carefully
Grid line is 10, and cross-sectional width is 40um；Main grid is 5, and cross-sectional width is 1mm.FTO nesa coating and heavily doped district
Silicon substrate directly contact, and the local heavily doped region of line segment shape array distribution and silver electrode are connected to become one can be as crystal silicon
The conductive composition body of battery front side electrode.
Embodiment 6:
(1) method using diffusion, forms the uniform expansion of 40 Ω/ in the p-type polysilicon sheet front processed through surface-texturing
Dissipate layer；
(2) spraying mask by specific figure on diffusion layer, mask pattern is grid line shape, and thin grid are 30um by 100 width
The equidistant parallel lines composition of left and right, main grid is made up of the equidistant parallel lines that 5 width are 1mm, thin grid phase vertical with main grid
Hand over.
(3) use wet etching to remove phosphorosilicate glass, mask and back of the body knot, form heavy doping in the region being sprayed with mask, do not having
The region of spray mask is formed and is lightly doped；
(4) at the silicon nitride of front deposition about 80nm；
(5) method using mask and chemical agent corrosion is removed the antireflective of heavily doped region by the figure described in step (2)
Film；
(6) use sputtering method to deposit the GZO nesa coating of 200nm in front, then on nesa coating, use screen printing
The method of brush makes silver electrode, and silver electrode pattern is made up of the grid line of 1 group of equidistant parallel, and grid line quantity is 40, grid line width
For 30um.GZO nesa coating directly contacts with the silicon substrate in heavily doped district, and grid line shape heavily doped region and silver electrode is connected
Becoming one can be as the conductive composition body of crystal silicon battery front electrode.
Embodiment 7:
(1) method using diffusion, forms the uniform expansion of 40 Ω/ in the p-type polysilicon sheet front processed through surface-texturing
Dissipate layer；
(2) spraying mask by specific figure on diffusion layer, mask pattern is grid line shape, and thin grid are that 60um is left by 80 width
Right equidistant parallel lines composition, main grid is made up of the equidistant parallel lines that 3 width are 1.5mm, thin grid phase vertical with main grid
Hand over.
(3) use wet etching to remove phosphorosilicate glass, mask and back of the body knot, form heavy doping in the region being sprayed with mask, do not having
The region of spray mask is formed and is lightly doped；
(4) at the silicon nitride of front deposition about 80nm；
(5) laser is used to remove the antireflective coating of heavily doped region by the figure described in step (2)；
(6) using sputtering method at the AZO nesa coating of front deposition 100nm, this nesa coating is silica-based with heavily doped district
Body directly contacts, and the local heavily doped region of grid line shape is connected to become one can be as the conductive composition of crystal silicon battery front electrode
Body.
This utility model one crystal silicon solar energy battery nesa coating localized contact structure, employing is saturating with silicon substrate localized contact
Bright conducting film is as the front of solaode or backing transparent electrode, and partial contact zones is heavy doping, with beneficially electrically conducting transparent
Film and silicon substrate form good Ohmic contact.This utility model makes metal (silver, copper, aluminum, the nickel of making electrode of solar battery
Deng) usage amount is greatly reduced, it might even be possible to the most do not use metal, it is to avoid metal electrode light blocks the power loss caused, very
Good balances the dilemma that crystal silicon electrode light blocks between electric conductivity, makes the conversion efficiency of battery promote, production cost reduction.
The foregoing is only several embodiments of the present utility model, be not all of or unique embodiment, ordinary skill
The conversion of any equivalence that technical solutions of the utility model are taked by personnel by reading this utility model description, is this practicality
Novel claim is contained.
Claims (10)
1. a crystal silicon solar energy battery electrically conducting transparent assembly, it is characterized in that, described electrically conducting transparent assembly is arranged on front and/or the back side of body silicon solar cell, including: it is arranged on the nesa coating (1) on passivating film or antireflective coating (2) and the metal electrode (5) being arranged on nesa coating (1), passivating film or antireflective coating (2) are arranged on crystal silicon chip (4)；The front of described crystal silicon chip (4) or the back side are provided with the local heavily doped region (3) arranged according to regular pattern, described local heavily doped region (3) directly contacts with the nesa coating (1) of correspondence position, and local heavily doped region (3) and metal electrode (5) are connected to become the electrically conducting transparent assembly of crystal silicon cell electrode by nesa coating (1).
A kind of crystal silicon solar energy battery electrically conducting transparent assembly the most according to claim 1, it is characterized in that, described nesa coating (1) is that one or more laminations in ito thin film, AZO thin film, GZO thin film, FTO thin film, IWO thin film and graphene film are constituted, and the thickness of nesa coating (1) is 50～500nm.
A kind of crystal silicon solar energy battery electrically conducting transparent assembly the most according to claim 1, it is characterized in that, locally heavily doped region (3) uses array pattern arrangement, and its pattern is one-dimensional, two-dimentional geometric figure or one-dimensional and two-dimentional geometric figure combination；One-dimensional geometric figure is selected from: line segment, phantom line segments, camber line or grid line shape；Two-dimentional geometric figure is selected from: circle, ellipse, spindle, annular, polygon, polygon or sector.
A kind of crystal silicon solar energy battery electrically conducting transparent assembly the most according to claim 3, it is characterised in that described one-dimensional geometric live width is 30～100um, a length of 0.05～1.5mm；It is 0.5～2mm with two linear spacing adjacent in a line, is 0.5～2mm with two linear spacing adjacent in string.
A kind of crystal silicon solar energy battery electrically conducting transparent assembly the most according to claim 3, it is characterised in that the size of described two-dimentional geometric figure is 30～200um, and adjacent two centre of figures are away from for 0.8～2mm.
A kind of crystal silicon solar energy battery electrically conducting transparent assembly, it is characterised in that metal electrode (5) is silver electrode, aluminum electrode, nickel electrode, copper electrode, alloy electrode or metal composite electrode；The arrangement pattern of metal electrode (5) is one group of parallel segment or the combination organizing parallel segment more, and the width of line segment is 20～2000um, and quantity is 5～100, and line length is 2～156mm, and the distance between adjacent segments is 0.5～50mm.
A kind of crystal silicon solar energy battery electrically conducting transparent assembly the most according to claim 1, it is characterised in that described crystal silicon chip (4) is p-type or the polysilicon chip of the monocrystalline silicon piece of N-type, p-type or N-type；Locally heavily doped region (3) is N-type or the heavily doped district of p-type, and heavily doped sheet resistance is 5～50 Ω/.
A kind of crystal silicon solar energy battery electrically conducting transparent assembly the most according to claim 1, it is characterised in that described electrically conducting transparent assembly is formed at p-type or the surface of N-type silicon substrate, or is formed at p-type or N-type emitter surface.
A kind of crystal silicon solar energy battery electrically conducting transparent assembly the most according to claim 1, it is characterized in that, antireflective coating is that one or more laminations in silicon nitride film, silicon oxide film, silicon oxynitride film, carborundum films and thin film of titanium oxide are constituted, and thickness is 50～100nm.
A kind of crystal silicon solar energy battery electrically conducting transparent assembly the most according to claim 1, it is characterized in that, passivating film is that one or more laminations in silicon nitride film, silicon oxide film, silicon oxynitride film, aluminum oxide film and amorphous silicon membrane are constituted, and thickness is 5～50nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105702757A (en) * | 2016-04-07 | 2016-06-22 | 乐叶光伏科技有限公司 | Transparent conducting assembly for crystalline silicon solar cell and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702757A (en) * | 2016-04-07 | 2016-06-22 | 乐叶光伏科技有限公司 | Transparent conducting assembly for crystalline silicon solar cell and preparation method thereof |
| CN105702757B (en) * | 2016-04-07 | 2018-02-23 | 隆基乐叶光伏科技有限公司 | A kind of crystal silicon solar energy battery electrically conducting transparent assembly and preparation method thereof |
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