WO2014090009A1 - Electrode structure of solar cell plate - Google Patents
Electrode structure of solar cell plate Download PDFInfo
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- WO2014090009A1 WO2014090009A1 PCT/CN2013/084165 CN2013084165W WO2014090009A1 WO 2014090009 A1 WO2014090009 A1 WO 2014090009A1 CN 2013084165 W CN2013084165 W CN 2013084165W WO 2014090009 A1 WO2014090009 A1 WO 2014090009A1
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- Prior art keywords
- solar cell
- electrode
- gate lines
- main
- distributed
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the invention relates to the field of optoelectronic technology, and in particular to an electrode structure of a solar cell sheet. Background technique
- Photovoltaic power generation has the advantages of safety, reliability, noise-free, low failure rate, etc.
- Solar cells are the main components of photovoltaic power generation technology that directly convert solar energy into electrical energy.
- a common crystalline silicon solar cell is composed of a back electrode, a P-type layer made of a semiconductor material, an N-type layer, a P-N junction, an anti-reflection film, and a front gate electrode.
- the semiconductor structure in the solar cell absorbs solar energy.
- the excitation generates electrons and hole pairs.
- the electrons and hole pairs are separated by the self-built electric field of the P-N junction inside the semiconductor.
- the electron flow enters the N region, and the holes flow into the P region to form a photo-generated electric field. If the crystalline silicon is too energy-efficient battery
- the positive and negative terminals are connected to an external circuit, and a photocurrent is passed through the external circuit.
- crystalline silicon solar cell batteries use a P-type silicon wafer, which forms a P-N junction after diffusion of phosphorus, a back electrode and a back field are formed on the P-type silicon, and a front gate electrode is formed on the N-plane formed by diffusion, and the entire device is utilized.
- the photo-voltaic effect of the P-N junction works.
- the front gate electrode of a 125 mm x 125 mm single crystal silicon or polycrystalline silicon battery two main gate lines are generally used, and for the front gate electrode of a 156 mm X 156 mm single crystal silicon or polycrystalline silicon battery, three main gate lines can be added.
- a number of evenly and parallelly distributed sub-gate lines are then applied perpendicular to both sides of the main gate line.
- the current generated by the crystalline silicon solar cell under illumination is electrically conducted through the sub-gate line and the main gate line, the main gate line constitutes the negative electrode of the battery, and the current is concentrated to the main gate line for derivation.
- the current collection method of such a battery still has a lack of power, that is, only unified power generation, and only one power supply mode often causes waste when power supply demand is insufficient. Summary of the invention
- the object of the present invention is to overcome the deficiencies of the prior art and to provide an electrode structure of a solar cell having a plurality of independent power generating units, each of which can be used in parallel after being connected in parallel, or can be used as a separate power generating unit.
- a technical solution for achieving the object of the present invention is: an electrode structure of a solar cell sheet, including a back-up a front and a front gate electrode, the back electrode is distributed on the back surface of the solar cell sheet, the front gate electrode is distributed on the front surface of the solar cell sheet, and the front gate electrode includes mutually parallel main gate lines and a plurality of sub-gate lines perpendicular to the main gate lines There are four main grid lines, two of which are arranged on both sides, the other two are arranged in the middle, and the interval between the two main grid lines is 0.2 mm to 2 mm.
- the back electrode is composed of four parallel lines, two of which are arranged on both sides, the other two are arranged in the middle, and the interval between the two back electrodes is 0.2 mm to 2 mm.
- the width of the main gate line is 0.5 mm to 2 mm.
- the two main grids are a main unit that divides the battery into two parts.
- the front and rear electrodes of the battery are not connected to each other, and current collection can be performed independently. It is also possible to use the left and right parts in parallel through the component process to avoid waste when the power supply demand is insufficient.
- Figure 1 is a schematic front view showing the structure of the present invention
- FIG. 2 is a schematic rear view of the present invention. The figure is marked as:
- an electrode structure of a solar cell panel includes a back electrode 4 and a front gate electrode, the back electrode 4 is distributed on the back surface of the solar cell sheet, the front gate electrode is distributed on the front surface of the solar cell sheet, and the front gate electrode includes The main gate line 1 parallel to each other and the plurality of sub-gate lines 3 perpendicular to the main gate line 1, the main gate line 1 has four, two of which are arranged on both sides, the other two are arranged in the middle, and the middle two
- the interval 2 between the main gate lines 1 is 0.2 mm to 2 mm wide.
- the width of the main gate line 1 is 0.5 mm to 2 mm.
- the back electrode 4 is composed of four parallel lines, two of which are arranged on both sides, the other two are arranged in the middle, and the interval 5 between the two back electrodes 4 is 0.2 mm. 2mm.
- the electrode for fabricating the solar cell sheet 6 may be any method of fabricating electrodes by screen printing, evaporation, sputtering, electroplating, spraying, etc.
- the back field 7, the back electrode 4 and the front side are formed by screen printing.
- An N-type crystalline silicon layer is formed on a P-type single crystal silicon wafer by a high temperature diffusion or ion implantation process, thereby forming a P-N junction structure, and then removing the diffusion layer of the edge by plasma etching, and removing it by chemical etching. Dispersing the formed phosphosilicate glass layer, depositing a silicon nitride antireflection film, the silicon nitride antireflection film can reduce the light emissivity of the surface of the silicon wafer, and utilize the bonding of hydrogen ions to enhance the surface of the silicon wafer and the body. The passivation effect reduces the recombination of carriers, and finally the back electrode 4 and the front gate electrode are formed by screen printing.
- the back electrode 4 is first printed by screen printing, and the back electrode 4 is sintered by silver paste.
- the back field 7 of the solar cell is printed on the back side of the solar cell sheet 6. In this embodiment, there are four back electrodes.
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Provided is an electrode structure of a solar cell plate, comprising a back electrode (4) and a front side gate electrode, wherein the back electrode (4) is distributed on the back side of the solar cell plate, the front side gate electrode is distributed on the front side of the solar cell plate, the front side gate electrode comprises mutually-parallel main gate lines (1) and a plurality of secondary gate lines (3) perpendicular to the main gate lines (1), there are four main gate lines (1), two of the main gate lines are distributed at two sides, and the other two main gate lines are distributed in the middle, and the width of an interval (2) between the two main gate lines (1) in the middle is 0.2 mm-2 mm. The electrode structure of a solar cell plate has a plurality of independent power generating units, and each of the independent units may be combined for use after being connected in parallel and also may be used as an independent power generating unit.
Description
太阳能电池片的电极结构 技术领域 Electrode structure of solar cell sheet
本发明涉及光电技术领域， 特别是涉及一种太阳能电池片的电极结构。 背景技术 The invention relates to the field of optoelectronic technology, and in particular to an electrode structure of a solar cell sheet. Background technique
随着全球能源的日趋紧张， 太阳能以无污染、 市场空间大等独有的优势受 到广泛重视。 光伏发电具有安全可靠、 无噪声、 故障率低等优点， 太阳能电池 是光伏发电技术中将太阳能直接转化为电能的主要部件。 With the increasing global energy shortage, solar energy has received extensive attention due to its unique advantages such as pollution-free and large market space. Photovoltaic power generation has the advantages of safety, reliability, noise-free, low failure rate, etc. Solar cells are the main components of photovoltaic power generation technology that directly convert solar energy into electrical energy.
常见的晶体硅太阳能电池是由背面电极、 半导体材料构成的 P型层、 N型 层、 P— N 结、 减反射薄膜、 正面栅电极等部分组成。 当太阳光照射到太阳能 电池表面时， 减反射薄膜和绒面结构可有效减少电池表面的光反射损失。 太阳 能电池中的半导体结构吸收太阳能后。 激发产生电子、 空穴对， 电子、 空穴对 被半导体内部 P— N结自建电场分开， 电子流进入 N区， 空穴流入 P区， 形成 光生电场， 如果将晶体硅太能能电池的正、 负极与外部电路连接， 外部电路中 就有光生电流通过。 A common crystalline silicon solar cell is composed of a back electrode, a P-type layer made of a semiconductor material, an N-type layer, a P-N junction, an anti-reflection film, and a front gate electrode. When sunlight hits the surface of the solar cell, the anti-reflective film and the suede structure can effectively reduce the light reflection loss on the surface of the battery. The semiconductor structure in the solar cell absorbs solar energy. The excitation generates electrons and hole pairs. The electrons and hole pairs are separated by the self-built electric field of the P-N junction inside the semiconductor. The electron flow enters the N region, and the holes flow into the P region to form a photo-generated electric field. If the crystalline silicon is too energy-efficient battery The positive and negative terminals are connected to an external circuit, and a photocurrent is passed through the external circuit.
目前多数的晶体硅太阳能电池电池采用 P型硅片， 经过磷扩散后形成 P— N结， 在 P型硅上制作背电极和背场， 在扩散形成的 N面制作正面栅电极， 整 个器件利用 P— N结的光生伏特效应来工作。对于 125mmX 125mm的单晶硅或 多晶硅电池的正面栅电极一般采用两条主栅线， 对于 156mmX 156mm 的单晶 硅或多晶硅电池的正面栅电极可增加到三条主栅线。 然后再垂直于主栅线的两 边加上一定数目的均匀且平行分布的副栅线。 在光照下晶体硅太阳能电池产生 的电流通过副栅线和主栅线相互导通， 主栅线构成电池的负电极， 电流汇聚到 主栅线上导出。但这种电池的电流收集方式还存在下根不足， 即只能统一发电， 只有一种供电方式， 在供电需求不足时， 往往会造成浪费。 发明内容 At present, most of the crystalline silicon solar cell batteries use a P-type silicon wafer, which forms a P-N junction after diffusion of phosphorus, a back electrode and a back field are formed on the P-type silicon, and a front gate electrode is formed on the N-plane formed by diffusion, and the entire device is utilized. The photo-voltaic effect of the P-N junction works. For the front gate electrode of a 125 mm x 125 mm single crystal silicon or polycrystalline silicon battery, two main gate lines are generally used, and for the front gate electrode of a 156 mm X 156 mm single crystal silicon or polycrystalline silicon battery, three main gate lines can be added. A number of evenly and parallelly distributed sub-gate lines are then applied perpendicular to both sides of the main gate line. The current generated by the crystalline silicon solar cell under illumination is electrically conducted through the sub-gate line and the main gate line, the main gate line constitutes the negative electrode of the battery, and the current is concentrated to the main gate line for derivation. However, the current collection method of such a battery still has a lack of power, that is, only unified power generation, and only one power supply mode often causes waste when power supply demand is insufficient. Summary of the invention
本发明的目的是克服现有技术的不足， 提供一种具有多个独立发电单元的 太阳能电池片的电极结构， 各部分独立单元可以在并联后合并使用， 也可以作 为单独发电单元使用。 SUMMARY OF THE INVENTION The object of the present invention is to overcome the deficiencies of the prior art and to provide an electrode structure of a solar cell having a plurality of independent power generating units, each of which can be used in parallel after being connected in parallel, or can be used as a separate power generating unit.
实现本发明目的的技术方案是： 一种太阳能电池片的电极结构， 包括背电
极和正面栅电极， 背电极分布于太阳能电池片的背面， 正面栅电极分布于太阳 能电池片的正面， 正面栅电极包括相互平行的主栅线和多根与主栅线相垂直的 副栅线， 主栅线有四根， 其中两根布置在两侧， 另外两根布置在中间， 且中间 两根主栅线之间的间隔宽为 0.2mm〜2mm。 A technical solution for achieving the object of the present invention is: an electrode structure of a solar cell sheet, including a back-up a front and a front gate electrode, the back electrode is distributed on the back surface of the solar cell sheet, the front gate electrode is distributed on the front surface of the solar cell sheet, and the front gate electrode includes mutually parallel main gate lines and a plurality of sub-gate lines perpendicular to the main gate lines There are four main grid lines, two of which are arranged on both sides, the other two are arranged in the middle, and the interval between the two main grid lines is 0.2 mm to 2 mm.
进一步， 所述背电极由四根平行线组成， 其中两根布置在两侧， 另外两根 布置在中间， 且中间两根背电极之间的间隔宽为 0.2mm〜2mm。 Further, the back electrode is composed of four parallel lines, two of which are arranged on both sides, the other two are arranged in the middle, and the interval between the two back electrodes is 0.2 mm to 2 mm.
更进一步， 所述主栅线的宽度为 0.5mm〜2mm。 Further, the width of the main gate line is 0.5 mm to 2 mm.
采用了上述技术方案后， 主栅线采用了四根， 其中两根布置在两侧， 另外 两根布置在中间， 且中间两根主栅线之间的间隔宽为 0.2mm〜2mm， 这样以两 根主栅为一个主要单元将电池分为左右两部分， 电池正面左右两部分电极互不 相联， 可以独立进行电流收集。 也可以通过组件工艺将左右两部分并联使用， 避免了供电需求不足时的浪费。 附图概述 After adopting the above technical solution, four main grid lines are used, two of which are arranged on both sides, the other two are arranged in the middle, and the interval between the two main gate lines is 0.2 mm to 2 mm, so that The two main grids are a main unit that divides the battery into two parts. The front and rear electrodes of the battery are not connected to each other, and current collection can be performed independently. It is also possible to use the left and right parts in parallel through the component process to avoid waste when the power supply demand is insufficient. BRIEF abstract
本发明的特征、 性能由以下的实施例及其附图进一步描述。 Features and capabilities of the present invention are further described by the following examples and the accompanying drawings.
图 1为本发明的主视结构示意图； Figure 1 is a schematic front view showing the structure of the present invention;
图 2为本发明的后视结构示意图。 图中标记为： 2 is a schematic rear view of the present invention. The figure is marked as:
1、 主栅线 1, the main grid line
2、 主栅线之间的间隔 2. The spacing between the main grid lines
3、 副栅线 3, the secondary grid line
4、 背电极 4, the back electrode
5、 背电极之间的间隔 5, the spacing between the back electrodes
6、 电池片 6, battery
7、 背场。 具体实施方式 7, back to the field. detailed description
为了使本发明的内容更容易被清楚地理解， 下面根据具体实施例并结合附 图， 对本发明作进一步详细的说明，
如图 1所示， 一种太阳能电池片的电极结构， 包括背电极 4和正面栅电极， 背电极 4分布于太阳能电池片的背面，正面栅电极分布于太阳能电池片的正面， 正面栅电极包括相互平行的主栅线 1和多根与主栅线 1相垂直的副栅线 3， 主 栅线 1有四根， 其中两根布置在两侧， 另外两根布置在中间， 且中间两根主栅 线 1之间的间隔 2宽为 0.2mm〜2mm。 主栅线 1的宽度为 0.5mm〜2mm。 In order to make the content of the present invention easier to understand, the present invention will be further described in detail below with reference to the specific embodiments, As shown in FIG. 1 , an electrode structure of a solar cell panel includes a back electrode 4 and a front gate electrode, the back electrode 4 is distributed on the back surface of the solar cell sheet, the front gate electrode is distributed on the front surface of the solar cell sheet, and the front gate electrode includes The main gate line 1 parallel to each other and the plurality of sub-gate lines 3 perpendicular to the main gate line 1, the main gate line 1 has four, two of which are arranged on both sides, the other two are arranged in the middle, and the middle two The interval 2 between the main gate lines 1 is 0.2 mm to 2 mm wide. The width of the main gate line 1 is 0.5 mm to 2 mm.
如图 2所示， 所述背电极 4由四根平行线组成， 其中两根布置在两侧， 另 外两根布置在中间， 且中间两根背电极 4之间的间隔 5宽为 0.2mm〜2mm。 As shown in FIG. 2, the back electrode 4 is composed of four parallel lines, two of which are arranged on both sides, the other two are arranged in the middle, and the interval 5 between the two back electrodes 4 is 0.2 mm. 2mm.
制作太阳能电池片 6的电极可以采用丝网印刷、 蒸发、 溅射、 电镀、 喷涂 等任何制作电极的方法， 在本实施例中， 采用丝网印刷的方式制作背场 7、 背 电极 4和正面栅电极。 首先选取检验合格的 P型单晶硅片， 规格为 156mm X 156mm, 经过化学清洗和表面制绒以在单晶硅片上形成金字塔结构， 增加光的 吸收， 提高电池的短路电流和转换效率； 在利用高温扩散或者离子注入等工艺 在 P型单晶硅片上制作出 N型的晶硅层， 这样便形成 P— N结结构， 然后经过 等离子刻蚀去除边沿的扩散层， 通过化学腐蚀去掉扩散形成的磷硅玻璃层， 淀 积氮化硅增透薄膜， 所述氮化硅增透薄膜能减少硅片表面的光放射率， 同时利 用氢离子的成键来增强硅片表面和体内的钝化效果， 降低载流子的复合， 最后 利用丝网印刷来制作背电极 4和正面栅电极。 The electrode for fabricating the solar cell sheet 6 may be any method of fabricating electrodes by screen printing, evaporation, sputtering, electroplating, spraying, etc. In this embodiment, the back field 7, the back electrode 4 and the front side are formed by screen printing. Gate electrode. Firstly, the P-type single crystal silicon wafer with qualified inspection is selected. The specification is 156mm X 156mm. After chemical cleaning and surface texturing, a pyramid structure is formed on the single crystal silicon wafer to increase the absorption of light and improve the short-circuit current and conversion efficiency of the battery. An N-type crystalline silicon layer is formed on a P-type single crystal silicon wafer by a high temperature diffusion or ion implantation process, thereby forming a P-N junction structure, and then removing the diffusion layer of the edge by plasma etching, and removing it by chemical etching. Dispersing the formed phosphosilicate glass layer, depositing a silicon nitride antireflection film, the silicon nitride antireflection film can reduce the light emissivity of the surface of the silicon wafer, and utilize the bonding of hydrogen ions to enhance the surface of the silicon wafer and the body. The passivation effect reduces the recombination of carriers, and finally the back electrode 4 and the front gate electrode are formed by screen printing.
在本实施例中， 首先采用丝网印刷方式印刷背电极 4， 背电极 4由银铝浆 烧结而成。 再在所述的太阳能电池片 6的背面印刷太阳能电池的背场 7。 在本 实施例中， 背电极有 4根。 In the present embodiment, the back electrode 4 is first printed by screen printing, and the back electrode 4 is sintered by silver paste. The back field 7 of the solar cell is printed on the back side of the solar cell sheet 6. In this embodiment, there are four back electrodes.
以上所述的具体实施例， 对本发明的目的、 技术方案和有益效果进行了进 一步详细说明， 所应理解的是， 以上所述仅为本发明的具体实施例而已， 并不 用于限制本发明， 凡在本发明的精神和原则之内， 所做的任何修改、等同替换、 改进等， 均应包含在本发明的保护范围之内。
The above described specific embodiments of the present invention are described in detail, and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and scope of the present invention are intended to be included within the scope of the present invention.
Claims
1、 一种太阳能电池片的电极结构， 包括背电极 （4) 和正面栅电极， 背电 极 （4) 分布于太阳能电池片的背面， 正面栅电极分布于太阳能电池片的正面， 正面栅电极包括相互平行的主栅线 （1) 和多根与主栅线 （1) 相垂直的副栅线 (3) ， 其特征在于： 主栅线 （1) 有四根， 其中两根布置在两侧， 另外两根布 置在中间， 且中间两根主栅线 （1) 之间的间隔 （2) 宽为 0.2mm〜2mm。 1. An electrode structure of a solar cell, including a back electrode (4) and a front grid electrode. The back electrode (4) is distributed on the back of the solar cell, and the front grid electrode is distributed on the front of the solar cell. The front grid electrode includes Main grid lines (1) that are parallel to each other and multiple auxiliary grid lines (3) that are perpendicular to the main grid line (1) are characterized in that: there are four main grid lines (1), two of which are arranged on both sides. , the other two are arranged in the middle, and the width of the interval (2) between the two middle main grid lines (1) is 0.2mm~2mm.
2、 根据权利要求 1所述的太阳能电池片的电极结构， 其特征在于： 所述 背电极 （4) 由四根平行线组成， 其中两根布置在两侧， 另外两根布置在中间， 且中间两根背电极 （4) 之间的间隔 （5) 宽为 0.2mm〜2mm。 2. The electrode structure of the solar cell sheet according to claim 1, characterized in that: the back electrode (4) consists of four parallel lines, two of which are arranged on both sides, and the other two are arranged in the middle, and The width of the interval (5) between the two middle back electrodes (4) is 0.2mm~2mm.
3、 根据权利要求 2所述的太阳能电池片的电极结构， 其特征在于： 所述 主栅线 （1) 的宽度为 0.5mm〜2mm。
3. The electrode structure of the solar cell sheet according to claim 2, characterized in that: the width of the main grid line (1) is 0.5mm~2mm.
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| JP2015546816A JP2016503959A (en) | 2012-12-10 | 2013-09-25 | Solar cell slice electrode structure |
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| CN201210525026.9A CN102969368B (en) | 2012-12-10 | 2012-12-10 | Electrode structure of solar cell piece |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109585590A (en) * | 2019-01-21 | 2019-04-05 | 南通苏民新能源科技有限公司 | A kind of solar battery sheet, component and production method |
| CN110137289A (en) * | 2018-02-08 | 2019-08-16 | 国家电投集团科学技术研究院有限公司 | The metal grid lines electrode and silicon heterojunction solar battery of silicon heterojunction solar battery |
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| CN102969368B (en) * | 2012-12-10 | 2015-06-10 | 常州天合光能有限公司 | Electrode structure of solar cell piece |
| CN103606575B (en) * | 2013-11-21 | 2016-03-23 | 英利集团有限公司 | Solar cell |
| CN103606570B (en) * | 2013-11-21 | 2017-01-04 | 英利集团有限公司 | Solaode |
| JP6802298B2 (en) | 2016-06-30 | 2020-12-16 | ビーワイディー カンパニー リミテッド | Photovoltaic cell assembly, photovoltaic cell array, and solar cell assembly |
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| JP2016503959A (en) | 2016-02-08 |
| CN102969368B (en) | 2015-06-10 |
| CN102969368A (en) | 2013-03-13 |
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