CN202957262U - Electrode structure of solar cell - Google Patents

Electrode structure of solar cell Download PDF

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Publication number
CN202957262U
CN202957262U CN 201220673238 CN201220673238U CN202957262U CN 202957262 U CN202957262 U CN 202957262U CN 201220673238 CN201220673238 CN 201220673238 CN 201220673238 U CN201220673238 U CN 201220673238U CN 202957262 U CN202957262 U CN 202957262U
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CN
China
Prior art keywords
electrode
grid line
main grid
solar cell
electrode structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201220673238
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Chinese (zh)
Inventor
威灵顿·皮埃尔J
盛健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Trina Solar Co Ltd
Original Assignee
Changzhou Trina Solar Energy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Trina Solar Energy Co Ltd filed Critical Changzhou Trina Solar Energy Co Ltd
Priority to CN 201220673238 priority Critical patent/CN202957262U/en
Application granted granted Critical
Publication of CN202957262U publication Critical patent/CN202957262U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses an electrode structure of a solar cell. The electrode structure comprises back electrodes (4) and a front gate electrode, wherein the back electrodes (4) are distributed on the back side of the solar cell; the front gate electrode is distributed on the front side of the solar cell and comprises four main gate lines (1) which are parallel to one another, and a plurality of auxiliary gate lines (3) which are perpendicular to the main gate lines (1); two main gate lines (1) are arranged on two sides; the other two main gate lines (1) are arranged in the middle; and the width of a gap (2) between the two main gate lines (1) in the middle is 0.2 to 2mm. The electrode structure of the solar cell is provided with a plurality of independent power generation units which can be connected in parallel and combined, and also can be used separately.

Description

The electrode structure of solar battery sheet
Technical field
The utility model relates to field of photoelectric technology, particularly relates to a kind of electrode structure of solar battery sheet.
Background technology
Along with day being becoming tight of global energy, solar energy with pollution-free, the market space is large etc., and exclusive advantage is in widespread attention.The advantages such as that photovoltaic generation has is safe and reliable, noiseless, failure rate is low, solar cell is in photovoltaic power generation technology, solar energy to be converted into to the critical piece of electric energy.
The P type layer that common crystal silicon solar energy battery consists of backplate, semi-conducting material, N-type layer, P-N knot, antireflection film, positive gate electrode etc. partly form.When solar irradiation is mapped to solar cell surface, antireflection film and suede structure can effectively reduce the light reflection loss of battery surface.After semiconductor structure in solar cell absorbs solar energy.Excite and produce electronics, hole pair, electronics, hole are to being separated by the inner P of semiconductor-N knot built-in field, and electron stream enters the N district, hole flows into the P district, form the photoproduction electric field, if positive and negative electrode that too can battery by crystalline silicon is connected with external circuit, in external circuit, just have photogenerated current to pass through.
Most crystal silicon solar energy battery batteries adopts P type silicon chip at present, form P-N knot after the phosphorus diffusion, make back electrode and back surface field on P type silicon, at the N face diffuseed to form, make positive gate electrode, the photovoltaic effect of whole devices use P-N knot carrys out work.For the monocrystalline silicon of 125mm * 125mm or two main grid lines of the general employing of positive gate electrode of polycrystal silicon cell, for the monocrystalline silicon of 156mm * 156mm or the positive gate electrode of polycrystal silicon cell, rise to three main grid lines.And then add the secondary grid line of the even and parallel distribution of some perpendicular to the both sides of main grid line.The electric current that crystal silicon solar energy battery produces under illumination is by secondary grid line and main grid line mutual conduction, and the main grid line forms the negative electrode of battery, and electric current converges on the main grid line and derives.But also there is lower root deficiency in the electric current collection mode of this battery, can only unify generating, only have a kind of supply power mode, when power demands is not enough, tend to cause waste.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of electrode structure with solar battery sheet of a plurality of Independent Power Generations unit is provided, and the each several part separate unit can merge use after parallel connection, also can be used as independent generator unit and uses.
The technical scheme that realizes the utility model purpose is: a kind of electrode structure of solar battery sheet, comprise back electrode and positive gate electrode, back electrode is distributed in the back side of solar battery sheet, positive gate electrode is distributed in the front of solar battery sheet, positive gate electrode comprises the secondary grid line that the main grid line that is parallel to each other and Duo Gen and main grid line are perpendicular, and the main grid line has four, and wherein two are arranged in both sides, other two be arranged in the middle of, and the interval between middle two main grid lines wide be 0.2mm ~ 2mm.
Further, described back electrode is comprised of four parallel lines, and wherein two are arranged in both sides, other two be arranged in the middle of, and the interval between middle two back electrodes wide be 0.2mm ~ 2mm.
Further, the width of described main grid line is 0.5mm ~ 2mm.
After having adopted technique scheme, the main grid line has adopted four, wherein two are arranged in both sides, other two are arranged in middle, and the interval between middle two main grid lines is wide is 0.2mm ~ 2mm, two main grids of take like this are divided into left and right two parts by battery as a formant, and battery front side left and right two parts electrode does not link mutually, can independently carry out electric current collection.Also can be by component process by the use in parallel of left and right two parts, the waste while having avoided power demands not enough.
The accompanying drawing explanation
Fig. 1 is main TV structure schematic diagram of the present utility model;
Fig. 2 is backsight structural representation of the present utility model.
In figure, be labeled as: 1, main grid line, 2, the interval between the main grid line, 3, secondary grid line, 4, back electrode, 5, the interval between back electrode, 6, cell piece, 7, back surface field.
Embodiment
For content of the present utility model more easily is expressly understood, below according to specific embodiment also by reference to the accompanying drawings, the utility model is described in further detail,
As shown in Figure 1, a kind of electrode structure of solar battery sheet, comprise back electrode 4 and positive gate electrode, back electrode 4 is distributed in the back side of solar battery sheet, and positive gate electrode is distributed in the front of solar battery sheet, and positive gate electrode comprises the secondary grid line 3 that the main grid line 1 that is parallel to each other and Duo Gen and main grid line 1 are perpendicular, main grid line 1 has four, wherein two are arranged in both sides, other two be arranged in the middle of, and the interval 2 between middle two main grid lines 1 wide be 0.2mm ~ 2mm.The width of main grid line 1 is 0.5mm ~ 2mm.
As shown in Figure 2, described back electrode 4 is comprised of four parallel lines, and wherein two are arranged in both sides, other two be arranged in the middle of, and the interval 5 between middle two back electrodes 4 wide be 0.2mm ~ 2mm.
The electrode of making solar battery sheet 6 can adopt the method for any making electrodes such as silk screen printing, evaporation, sputter, plating, spraying, in the present embodiment, adopts the mode of silk screen printing to make back surface field 7, back electrode 4 and positive gate electrode.At first choose the p type single crystal silicon sheet be up to the standards, specification is 156mm * 156mm, and process chemical cleaning and surface wool manufacturing, to form pyramid structure on monocrystalline silicon piece, increase the absorption of light, improve short circuit current and the conversion efficiency of battery; Produce the crystal silicon layer of N-type in techniques such as utilizing High temperature diffusion or Implantation on the p type single crystal silicon sheet, so just, form P-N junction structure, then remove the diffusion layer at edge through plasma etching, remove the phosphorosilicate glass layer diffuseed to form by chemical corrosion, the deposit silicon nitride anti-reflection film, described silicon nitride anti-reflection film can reduce the light emissivity of silicon chip surface, utilize hydrionic one-tenth key to strengthen the passivation effect in silicon chip surface and body simultaneously, reduce the compound of charge carrier, finally utilize silk screen printing to make back electrode 4 and positive gate electrode.
In the present embodiment, at first adopt screen printing mode printing back electrode 4, back electrode 4 is formed by silver-colored aluminium paste sintering.Again in the back surface field 7 of the back up solar cell of described solar battery sheet 6.In the present embodiment, back electrode has 4.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.

Claims (3)

1. the electrode structure of a solar battery sheet, comprise back electrode (4) and positive gate electrode, back electrode (4) is distributed in the back side of solar battery sheet, positive gate electrode is distributed in the front of solar battery sheet, positive gate electrode comprises the secondary grid line (3) that the main grid line (1) that is parallel to each other and many and main grid line (1) are perpendicular, it is characterized in that: main grid line (1) has four, wherein two are arranged in both sides, other two be arranged in the middle of, and the interval (2) between middle two main grid lines (1) wide be 0.2mm ~ 2mm.
2. the electrode structure of solar battery sheet according to claim 1, it is characterized in that: described back electrode (4) is comprised of four parallel lines, wherein two are arranged in both sides, other two be arranged in the middle of, and the interval (5) between middle two back electrodes (4) wide be 0.2mm ~ 2mm.
3. the electrode structure of solar battery sheet according to claim 2, it is characterized in that: the width of described main grid line (1) is 0.5mm ~ 2mm.
CN 201220673238 2012-12-10 2012-12-10 Electrode structure of solar cell Expired - Fee Related CN202957262U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220673238 CN202957262U (en) 2012-12-10 2012-12-10 Electrode structure of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220673238 CN202957262U (en) 2012-12-10 2012-12-10 Electrode structure of solar cell

Publications (1)

Publication Number Publication Date
CN202957262U true CN202957262U (en) 2013-05-29

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CN (1) CN202957262U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969368A (en) * 2012-12-10 2013-03-13 常州天合光能有限公司 Electrode structure of solar cell piece

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102969368A (en) * 2012-12-10 2013-03-13 常州天合光能有限公司 Electrode structure of solar cell piece
WO2014090009A1 (en) * 2012-12-10 2014-06-19 常州天合光能有限公司 Electrode structure of solar cell plate
CN102969368B (en) * 2012-12-10 2015-06-10 常州天合光能有限公司 Electrode structure of solar cell piece

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2

Patentee after: TRINA SOLAR Co.,Ltd.

Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2

Patentee before: trina solar Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2

Patentee after: trina solar Ltd.

Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2

Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130529

Termination date: 20181210