CN202855746U - Solar energy assembly with high conversion rate - Google Patents
Solar energy assembly with high conversion rate Download PDFInfo
- Publication number
- CN202855746U CN202855746U CN2012204131130U CN201220413113U CN202855746U CN 202855746 U CN202855746 U CN 202855746U CN 2012204131130 U CN2012204131130 U CN 2012204131130U CN 201220413113 U CN201220413113 U CN 201220413113U CN 202855746 U CN202855746 U CN 202855746U
- Authority
- CN
- China
- Prior art keywords
- layer
- high conversion
- type silicon
- negative electrode
- model
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 6
- 230000005684 electric field Effects 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 238000005247 gettering Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
Provided is a solar energy assembly with high conversion rate, comprising a cathode layer, an N type silicon layer, a P type silicon layer, and an anode layer which are sequentially laminated. The solar energy assembly of the utility model is further provided with a passivation layer arranged between the cathode layer and the N type silicon layer. The silicon dioxide layer of the utility model, arranged between the anode layer and the P type silicon layer, is provided with the gettering and passivation functions.
Description
Technical field
The utility model relates to technical field of solar batteries, particularly a kind of solar components of high conversion.
Background technology
Solar module also is solar panel, is the core in the solar power system, also is most important part in the solar power system.Solar cell is the device that directly light energy conversion is become electric energy by photoelectric effect or Photochemical effects.Solar cell more and more receives people's concern as green energy resource.The crystalline silicon material quality plays vital effect to the efficient of solar cell, and crystalline silicon substrate material surface defect concentration is very high, such as a large amount of dangling bonds, impurity and scission of link etc., causes the silicon chip surface minority carrier life time greatly to reduce, and recombination rate is lower.
The utility model content
The purpose of this utility model is to overcome the defective that prior art exists, and provides a kind of conversion efficiency high solar components.
The technical scheme that realizes the utility model purpose is: a kind of solar components of high conversion has the negative electrode layer, N-type silicon layer, P type silicon layer and the anodal layer that stack gradually; Also has passivation layer; Described passivation layer is arranged between negative electrode layer and the N-type silicon layer.
The described passivation layer of technique scheme is silicon dioxide layer.
The described negative electrode of technique scheme and positive electrode are aluminium lamination.
The surface of the described negative electrode layer of technique scheme is provided with main grid and the secondary grid vertical with main grid and that equidistantly distribute that form by the half tone graphic printing.
Have back electrode and back of the body electric field on the described anodal layer of technique scheme.
After adopting technique scheme, the utlity model has following positive effect:
(1) passivation layer of the present utility model is arranged between anodal layer and the P type silicon layer; Passivation layer is silicon dioxide layer, and silicon dioxide layer has the effect of gettering, passivation.
(2) the utility model is used silver paste and is made electrode and back of the body electric field, optimize graphic designs, not only guarantee the planarization of the good conductivity of electrode, solderability and back of the body electric field, had more the printing performance of excellence, the advantage that adhesive force is high, flexibility is low and conversion efficiency is high.
Description of drawings
Content of the present utility model is easier to be expressly understood in order to make, and the below is described in further detail the utility model, wherein according to specific embodiment also by reference to the accompanying drawings
Fig. 1 is structural representation of the present utility model;
1. negative electrode layers among the figure, 11. main grids, 12. secondary grid, 2.N type silicon layer, 3.P type silicon layer, 4. anodal layer, 41. back electrodes, 42. back of the body electric field, 5. passivation layers.
Embodiment
(embodiment 1)
See Fig. 1, the utlity model has the negative electrode layer 1, N-type silicon layer 2, P type silicon layer 3, anodal layer 4 and the passivation layer 5 that stack gradually; Negative electrode layer 1 and anodal layer 4 are silver layer, and the surface of negative electrode layer 1 is provided with the main grid 11 that forms by the half tone graphic printing and and the equidistantly secondary grid 12 of distribution vertical with main grid 11; Have back electrode 41 and back of the body electric field 42 on the anodal layer 4; Passivation layer 5 is silicon dioxide layer, and passivation layer 5 is arranged between negative electrode layer 1 and the N-type silicon layer 2.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (5)
1. the solar components of a high conversion has the negative electrode layer (1), N-type silicon layer (2), P type silicon layer (3) and the anodal layer (4) that stack gradually; It is characterized in that: also have passivation layer (5); Described passivation layer (5) is arranged between negative electrode layer (1) and the N-type silicon layer (2).
2. the solar components of high conversion according to claim 1, it is characterized in that: described passivation layer (5) is silicon dioxide layer.
3. the solar components of high conversion according to claim 1 and 2, it is characterized in that: described negative electrode (1) and positive electrode (4) are aluminium lamination.
4. the solar components of high conversion according to claim 3 is characterized in that: the surface of described negative electrode layer (1) is provided with the main grid (11) that forms by the half tone graphic printing and and the equidistantly secondary grid (12) of distribution vertical with main grid (11).
5. the solar components of high conversion according to claim 4 is characterized in that: have back electrode (41) and back of the body electric field (42) on the described anodal layer (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012204131130U CN202855746U (en) | 2012-08-20 | 2012-08-20 | Solar energy assembly with high conversion rate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012204131130U CN202855746U (en) | 2012-08-20 | 2012-08-20 | Solar energy assembly with high conversion rate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202855746U true CN202855746U (en) | 2013-04-03 |
Family
ID=47986913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012204131130U Expired - Lifetime CN202855746U (en) | 2012-08-20 | 2012-08-20 | Solar energy assembly with high conversion rate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202855746U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110249433A (en) * | 2016-11-09 | 2019-09-17 | 迈尔博尔格(德国)有限公司 | Crystalline solar cells between front contact with transparency conducting layer and the method for manufacturing this solar battery |
-
2012
- 2012-08-20 CN CN2012204131130U patent/CN202855746U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110249433A (en) * | 2016-11-09 | 2019-09-17 | 迈尔博尔格(德国)有限公司 | Crystalline solar cells between front contact with transparency conducting layer and the method for manufacturing this solar battery |
| CN110249433B (en) * | 2016-11-09 | 2022-03-25 | 迈尔博尔格(德国)有限公司 | Crystalline solar cell and method for producing such a solar cell |
| US11444211B2 (en) | 2016-11-09 | 2022-09-13 | Meyer Burger (Germany) Gmbh | Crystalline solar cell comprising a transparent, conductive layer between the front-side contacts and method for producing such a solar cell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130403 |