CN107342332A - Two-sided POLO batteries and preparation method thereof - Google Patents
Two-sided POLO batteries and preparation method thereof Download PDFInfo
- Publication number
- CN107342332A CN107342332A CN201710549208.2A CN201710549208A CN107342332A CN 107342332 A CN107342332 A CN 107342332A CN 201710549208 A CN201710549208 A CN 201710549208A CN 107342332 A CN107342332 A CN 107342332A
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- Prior art keywords
- sided
- silicon chip
- polo
- batteries
- siox
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000002161 passivation Methods 0.000 claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 229920005591 polysilicon Polymers 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000007650 screen-printing Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000007704 wet chemistry method Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000005611 electricity Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 7
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 7
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 7
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to solar cell preparing technical field, a kind of more particularly to two-sided POLO batteries and preparation method thereof, crystal silicon layer, which is added, using silica carries out passivation on double surfaces, it is the surface defect for being not only passivated silicon chip surface that it, which acts on one, increase the response of dim light, also the metal at the back side and the contact of semiconductor have been passivated, has reduced contact negative electricity charge values；The second is due to being to be passivated entirely, contact is not put, the not few sub or how sub lateral transport in its base, the third is polysilicon is indirect band gap, current loss is small.
Description
Technical field
The present invention relates to solar cell preparing technical field, more particularly to a kind of two-sided POLO batteries and its preparation side
Method.
Background technology
At present, passivation cell is carried on the back as a kind of emerging high-efficiency battery technology, it is compound to be effectively passivated cell backside, and
The emissivity at the back side is reduced, so as to effectively absorb the light of long-wave band so that battery efficiency has big leap；And by
In the intervention of passivation layer, the angularity of cell piece has also obtained certain improvement.
Metal and semiconductor contact negative electricity charge values in conventional battery probably take peace/square centimeter 4000, if carrying out
Its value is between 100~300 after passivation.PERC passivation effects are preferable at present, but PERC is PERC there is also two shortcomings, first
Still there are the metal of part and the contact of semiconductor, another is that PERC back surface is a contact, increases carrier transport
Distance.
The content of the invention
The technical problem to be solved in the present invention is：In order to solve caused by metal and the contact of semiconductor in the prior art compared with
High negative electrical charge, puts the technical problem of few sub or how sub lateral transport of contact, the present invention provide a kind of two-sided POLO batteries and
Its preparation method, the present invention design POLO (POLy-Si on passivating interfacial to overcome disadvantages mentioned above
Oxides) battery, add crystal silicon layer using silica and carry out passivation on double surfaces, it is not only to be passivated surface defect that it, which acts on one, is increased
Add the response of dim light, be also passivated contact of the metal with semiconductor, reduce contact negative electricity charge values；The second is due to being complete blunt
Change, do not put contact, the not few sub or how sub lateral transport in its base, the third is polysilicon is indirect band gap, current loss
It is small.
The technical solution adopted for the present invention to solve the technical problems is：A kind of two-sided POLO batteries, including silicon chip substrate,
The two-sided of the silicon chip substrate is disposed with SiOx tunnel oxides, polysilicon layer and ITO conductive membrane layers from inside to outside.
A kind of preparation method of two-sided POLO batteries, including carry out two-sided cleaning and texturing, full passivation, ion successively to silicon chip
Injection, plating conductive film and silk-screen printing, in the full passivation technology using silica add crystal silicon be passivated to be formed it is entirely blunt
Change layer.Present invention adds polysilicon to carry out passivation on double surfaces, solves the metal of PERC batteries and the high negative electrical charge of semiconductor contact
Problem, and improve the current loss caused by a contact.
It is described be passivated entirely specifically include：
Using wet chemistry or wet oxygen method or ultraviolet method SiOx tunnel oxides (2), then profit are first prepared in the two-sided of silicon chip
Polysilicon layer (3) is prepared on the two-sided SiOx tunnel oxides (2) of silicon chip with PECVD or LPCVD, recycles ion implanting
The front and back of silicon chip is doped respectively, be finally prepared by silica add crystal silicon formed it is contactless complete blunt
Change layer.
The preparation method of described two-sided POLO batteries, specific steps include：
Cleaning and texturing, by silicon chip in HCl/HNO3Cleaned in mixed solution, remove surface damage layer, cutting stria and gold
Belong to ion etc., surface wool manufacturing is carried out using NaOH, because of anisotropic reactive, Surface Creation pyramid structure；
Tunnel oxide is prepared, is grown using wet chemistry or wet method Ozone or ultraviolet method in the two-sided of silicon chip
SiOx tunnel oxides (2), its film thickness monitoring are then annealed to it in 1~10nm；
Passivation layer, polysilicon layer is prepared on the two-sided SiOx tunnel oxides (2) of silicon chip using PECVD or LPCVD
(3), its film thickness monitoring is in 1~20nm；
Ion implanting, ion implanting is carried out to the front and back of silicon chip respectively, forms P respectively+Ploy-Si layers and N+
Ploy-Si layers；
Conducting film is plated, using PVD in the two-sided of silicon chip, i.e., in P+Ploy-Si layers and N+Ploy-Si layers deposit conductive film
ITO, two-sided its sheet resistance control is in 20~200 Ω；
Silk-screen printing, the silicon chip for completing ito thin film is subjected to silk-screen printing sintering, silk-screen goes out back electrode and positive electrode i.e.
Can.
The invention has the advantages that two-sided POLO batteries of the present invention and preparation method thereof, crystalline substance is added using silica
Silicon layer carries out passivation on double surfaces, and it is the surface defect for being not only passivated silicon chip surface that it, which acts on one, increases the response of dim light, is also passivated
Contact of the metal at the back side with semiconductor, reduce contact negative electricity charge values；The second is due to being to be passivated entirely, contact is not put,
Its base (basal region) is without few sub or how sub lateral transport, the third is polysilicon is indirect band gap, current loss is small.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 is battery structure schematic diagram prepared by the present invention.
In figure：1st, silicon chip substrate, 2, SiOx tunnel oxides, 3, polysilicon layer, 4, ITO conductive membrane layers.
Embodiment
In conjunction with the accompanying drawings, the present invention is further explained in detail.These accompanying drawings are simplified schematic diagram, only with
Illustration illustrates the basic structure of the present invention, therefore it only shows the composition relevant with the present invention.
As shown in figure 1, be optimum embodiment of the present invention, a kind of two-sided POLO batteries, including silicon chip substrate 1, the silicon chip
The two-sided of substrate 1 is disposed with SiOx tunnel oxides 2, polysilicon layer 3 and ITO conductive membrane layers 4 from inside to outside.
A kind of preparation method of two-sided POLO batteries, including carry out two-sided cleaning and texturing, full passivation, ion successively to silicon chip
Injection, conductive film and silk-screen printing are spent, adding crystal silicon using silica in full passivation technology is passivated to form full passivation layer.
Specific steps include：
Cleaning and texturing, by silicon chip in HCl/HNO3Cleaned in mixed solution, remove surface damage layer, cutting stria and gold
Belong to ion etc., surface wool manufacturing is carried out using NaOH, because of anisotropic reactive, Surface Creation pyramid structure；
Tunnel oxide is prepared, is grown using wet chemistry or wet method Ozone or ultraviolet method in the two-sided of silicon chip
SiOx tunnel oxides 2, its film thickness monitoring are then annealed to it in 1~10nm；
Passivation layer, polysilicon layer is prepared on the two-sided SiOx tunnel oxides 2 of silicon chip using PECVD or LPCVD
(3), its film thickness monitoring is in 1~20nm；
Ion implanting, ion implanting is carried out to the front and back of silicon chip respectively and is doped, forms P respectively+Ploy-Si
Layer and N+Ploy-Si layers；Final be prepared adds crystal silicon by silica and forms contactless full passivation layer；(PERC is a little
Contact, the preparation method of POLO batteries of the invention, metal and semiconductor are not in contact with, and the point with respect to PERC connects
Touch, here it is contactless.)
Conducting film is plated, using PVD in the two-sided of silicon chip, i.e., in P+Ploy-Si layers and N+Ploy-Si layers deposit conductive film
ITO, two-sided its sheet resistance control is in 20~200 Ω；
Silk-screen printing, the silicon chip for completing ito thin film is subjected to silk-screen printing sintering, silk-screen goes out back electrode and positive electrode i.e.
Can.It is described be passivated entirely specifically include：
It is complete by above-mentioned description, relevant staff using the above-mentioned desirable embodiment according to the present invention as enlightenment
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention' entirely.The technology of this invention
Property scope is not limited to the content on specification, it is necessary to determines its technical scope according to right.
Claims (4)
- A kind of 1. two-sided POLO batteries, it is characterised in that：Including silicon chip substrate (1), the silicon chip substrate (1) it is two-sided by introversion It is disposed with SiOx tunnel oxides (2), polysilicon layer (3) and ITO conductive membrane layers (4) outside.
- 2. a kind of preparation method of two-sided POLO batteries, including carry out two-sided cleaning and texturing, full passivation, ion note successively to silicon chip Enter, plate conductive film and silk-screen printing, it is characterised in that：Crystal silicon is added in the full passivation technology using silica to be passivated Form full passivation layer.
- 3. the preparation method of two-sided POLO batteries as claimed in claim 2, it is characterised in that：The specific bag being passivated entirely Include：SiOx tunnel oxides (2) are first prepared in the two-sided of silicon chip using wet chemistry or wet oxygen method or ultraviolet method, are recycled PECVD or LPCVD prepares polysilicon layer (3) on the two-sided SiOx tunnel oxides (2) of silicon chip, recycles ion implanting point The other front and back to silicon chip is doped, and is finally prepared and is added crystal silicon by silica and form contactless full passivation Layer.
- 4. the preparation method of two-sided POLO batteries as claimed in claim 2, it is characterised in that：Specific steps include：Cleaning and texturing, by silicon chip in HCl/HNO3Cleaned in mixed solution, remove surface damage layer, cutting stria and metal from Son etc., surface wool manufacturing is carried out using NaOH, because of anisotropic reactive, Surface Creation pyramid structure；Tunnel oxide is prepared, carries out growing SiOx tunnels in the two-sided of silicon chip using wet chemistry or wet method Ozone or ultraviolet method Wear oxide layer (2), its film thickness monitoring is then annealed to it in 1~10nm；Passivation layer, polysilicon layer (3) is prepared on the two-sided SiOx tunnel oxides (2) of silicon chip using PECVD or LPCVD, Its film thickness monitoring is in 1~20nm；Ion implanting, ion implanting is carried out to the front and back of silicon chip respectively, forms P respectively+Ploy-Si layers and N+Ploy-Si Layer；Conducting film is plated, using PVD in the two-sided of silicon chip, i.e., in P+Ploy-Si layers and N+Ploy-Si layers deposit conductive film ITO, Two-sided its sheet resistance control is in 20~200 Ω；Silk-screen printing, the silicon chip for completing ito thin film is subjected to silk-screen printing sintering, silk-screen goes out back electrode and positive electrode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710549208.2A CN107342332A (en) | 2017-07-07 | 2017-07-07 | Two-sided POLO batteries and preparation method thereof |
| PCT/CN2018/090560 WO2019007188A1 (en) | 2017-07-07 | 2018-06-11 | Double-sided polo cell and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710549208.2A CN107342332A (en) | 2017-07-07 | 2017-07-07 | Two-sided POLO batteries and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107342332A true CN107342332A (en) | 2017-11-10 |
Family
ID=60218523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710549208.2A Pending CN107342332A (en) | 2017-07-07 | 2017-07-07 | Two-sided POLO batteries and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107342332A (en) |
| WO (1) | WO2019007188A1 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994093A (en) * | 2017-12-04 | 2018-05-04 | 孙健春 | A kind of solar cell and its manufacture method |
| CN108538952A (en) * | 2018-05-18 | 2018-09-14 | 东方环晟光伏（江苏）有限公司 | Crystalline silicon high performance solar batteries structure and preparation method thereof |
| WO2019007188A1 (en) * | 2017-07-07 | 2019-01-10 | 常州亿晶光电科技有限公司 | Double-sided polo cell and manufacturing method thereof |
| CN109935659A (en) * | 2019-03-21 | 2019-06-25 | 河海大学常州校区 | A kind of preparation method of p-type solar battery |
| CN110061086A (en) * | 2019-04-04 | 2019-07-26 | 国家电投集团西安太阳能电力有限公司 | A kind of HBC solar battery |
| CN110649104A (en) * | 2019-09-19 | 2020-01-03 | 苏州拓升智能装备有限公司 | Solar cell with high photoelectric conversion efficiency |
| CN111048625A (en) * | 2019-12-26 | 2020-04-21 | 浙江晶科能源有限公司 | Preparation method of passivated contact P-type battery |
| CN111326606A (en) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N-type slicing solar cell structure and manufacturing method thereof |
| CN111640826A (en) * | 2020-06-10 | 2020-09-08 | 蒙城县比太新能源发展有限公司 | Preparation method of battery conducting by utilizing selective contact |
| CN117525179A (en) * | 2024-01-05 | 2024-02-06 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN117525180A (en) * | 2024-01-05 | 2024-02-06 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
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| CN104103699A (en) * | 2013-04-03 | 2014-10-15 | Lg电子株式会社 | Solar cell |
| CN105185866A (en) * | 2015-08-15 | 2015-12-23 | 常州天合光能有限公司 | Efficient passivation contact crystalline silicon solar cell preparation method |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019007188A1 (en) * | 2017-07-07 | 2019-01-10 | 常州亿晶光电科技有限公司 | Double-sided polo cell and manufacturing method thereof |
| CN107994093A (en) * | 2017-12-04 | 2018-05-04 | 孙健春 | A kind of solar cell and its manufacture method |
| CN108538952A (en) * | 2018-05-18 | 2018-09-14 | 东方环晟光伏（江苏）有限公司 | Crystalline silicon high performance solar batteries structure and preparation method thereof |
| CN109935659A (en) * | 2019-03-21 | 2019-06-25 | 河海大学常州校区 | A kind of preparation method of p-type solar battery |
| CN110061086A (en) * | 2019-04-04 | 2019-07-26 | 国家电投集团西安太阳能电力有限公司 | A kind of HBC solar battery |
| CN110649104A (en) * | 2019-09-19 | 2020-01-03 | 苏州拓升智能装备有限公司 | Solar cell with high photoelectric conversion efficiency |
| CN111048625A (en) * | 2019-12-26 | 2020-04-21 | 浙江晶科能源有限公司 | Preparation method of passivated contact P-type battery |
| CN111048625B (en) * | 2019-12-26 | 2021-10-22 | 浙江晶科能源有限公司 | Preparation method of passivated contact P-type battery |
| CN111326606A (en) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N-type slicing solar cell structure and manufacturing method thereof |
| CN111640826A (en) * | 2020-06-10 | 2020-09-08 | 蒙城县比太新能源发展有限公司 | Preparation method of battery conducting by utilizing selective contact |
| CN117525179A (en) * | 2024-01-05 | 2024-02-06 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN117525180A (en) * | 2024-01-05 | 2024-02-06 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN117525180B (en) * | 2024-01-05 | 2024-03-12 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN117525179B (en) * | 2024-01-05 | 2024-04-02 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019007188A1 (en) | 2019-01-10 |
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