CN107342332A - Two-sided POLO batteries and preparation method thereof - Google Patents
Two-sided POLO batteries and preparation method thereof Download PDFInfo
- Publication number
- CN107342332A CN107342332A CN201710549208.2A CN201710549208A CN107342332A CN 107342332 A CN107342332 A CN 107342332A CN 201710549208 A CN201710549208 A CN 201710549208A CN 107342332 A CN107342332 A CN 107342332A
- Authority
- CN
- China
- Prior art keywords
- sided
- silicon chip
- layer
- polo
- siox
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 20
- 229920005591 polysilicon Polymers 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims abstract 3
- 239000000377 silicon dioxide Substances 0.000 claims abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 4
- 238000012544 monitoring process Methods 0.000 claims 2
- 238000007704 wet chemistry method Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 238000005245 sintering Methods 0.000 claims 1
- 210000002268 wool Anatomy 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 2
- 230000005611 electricity Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 19
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 7
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 7
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 230000005641 tunneling Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
技术领域technical field
本发明涉及太阳能电池制备技术领域，尤其涉及一种双面POLO电池及其制备方法。The invention relates to the technical field of solar cell preparation, in particular to a double-sided POLO cell and a preparation method thereof.
背景技术Background technique
目前，背钝化电池作为一种新兴的高效电池技术，有效的钝化了电池背面复合，并降低了背面的发射率，从而有效的吸收了长波段的光，使得电池效率有了大的飞跃；并且由于钝化层的介入，电池片的翘曲度也得到了一定的改善。At present, as an emerging high-efficiency battery technology, the back passivation battery can effectively passivate the back of the battery and reduce the emissivity of the back, thereby effectively absorbing the long-wavelength light and making the battery efficiency a big leap. ; And due to the intervention of the passivation layer, the warpage of the battery sheet has also been improved to a certain extent.
常规的电池中的金属和半导体接触负电荷值大概在4000费安/平方厘米，若进行钝化后其值在100～300之间。目前PERC钝化效果较好，但PERC也存在两个缺点，第一是PERC仍有部分的金属与半导体的接触，另一个是PERC的背表面是点接触，增大了载流子运输的距离。The metal and semiconductor contact negative charge value in a conventional battery is about 4000 FA/cm2, and the value is between 100 and 300 after passivation. At present, the passivation effect of PERC is better, but PERC also has two disadvantages. The first is that PERC still has some contact between metal and semiconductor, and the other is that the back surface of PERC is point contact, which increases the distance of carrier transport. .
发明内容Contents of the invention
本发明要解决的技术问题是：为了解决现有技术中金属与半导体的接触产生的较高负电荷，点接触的少子或多子的横向传输的技术问题，本发明提供一种双面POLO电池及其制备方法，本发明为克服上述缺点，设计POLO(POLy-Si on passivating interfacialOxides)电池，利用氧化硅加多晶硅层进行双面钝化，其作用一是不仅钝化了表面缺陷，增加弱光的响应，也钝化了金属与半导体的接触，减少了接触负电荷值；其二是由于是全钝化，没有点接触，其基区没有少子或多子的横向传输，其三是多晶硅为间接带隙，电流损失小。The technical problem to be solved by the present invention is: in order to solve the technical problem of the relatively high negative charge generated by the contact between the metal and the semiconductor in the prior art, and the lateral transmission of the few or many carriers in point contact, the present invention provides a double-sided POLO battery And preparation method thereof, the present invention is for overcoming above-mentioned shortcoming, designs POLO (POLy-Si on passivating interfacialOxides) battery, utilizes silicon oxide to add polysilicon layer to carry out double-sided passivation, and its effect one is not only passivation surface defect, increases weak light The response of the passivation also passivates the contact between the metal and the semiconductor, reducing the contact negative charge value; the second is because it is fully passivated, there is no point contact, and there is no lateral transmission of few or many carriers in the base area; the third is that polysilicon is Indirect bandgap, small current loss.
本发明解决其技术问题所采用的技术方案是：一种双面POLO电池，包括硅片基底，所述硅片基底的双面由内向外依次设置有SiOx隧穿氧化层、多晶硅层以及ITO导电薄膜层。The technical solution adopted by the present invention to solve the technical problem is: a double-sided POLO battery, including a silicon substrate, and the two sides of the silicon substrate are sequentially provided with a SiOx tunneling oxide layer, a polysilicon layer and an ITO conductive layer from the inside to the outside. film layer.
一种双面POLO电池的制备方法，包括对硅片依次进行双面清洗制绒、全钝化、离子注入、镀导电薄膜和丝网印刷，所述全钝化工艺中采用氧化硅加多晶硅进行钝化形成全钝化层。本发明加入了多晶硅进行双面钝化，解决PERC电池的金属与半导体接触的高负电荷问题，并改善因点接触造成的电流损失。A method for preparing a double-sided POLO battery, comprising sequentially double-sided cleaning, full passivation, ion implantation, conductive thin film plating and screen printing on a silicon wafer, wherein silicon oxide plus polysilicon is used in the full passivation process Passivation forms a fully passivated layer. The invention adds polysilicon for double-sided passivation, solves the problem of high negative charge in the contact between the metal and the semiconductor of the PERC battery, and improves the current loss caused by the point contact.
所述全钝化的具体包括：The full passivation specifically includes:
利用湿法化学或湿氧法或紫外法在硅片的双面先制备SiOx隧穿氧化层(2)，再利用PECVD或LPCVD在硅片的双面的SiOx隧穿氧化层(2)上制备多晶硅层(3)，再利用离子注入分别对硅片的正面和背面进行掺杂，最终制备得到由氧化硅加多晶硅形成非接触式的全钝化层。Prepare the SiOx tunneling oxide layer (2) on both sides of the silicon wafer by wet chemical method or wet oxygen method or ultraviolet method, and then prepare the SiOx tunneling oxide layer (2) on both sides of the silicon wafer by PECVD or LPCVD The polysilicon layer (3), and ion implantation is used to dope the front and back sides of the silicon wafer respectively, and finally a non-contact full passivation layer formed by silicon oxide and polysilicon is prepared.
所述的双面POLO电池的制备方法，具体步骤包括：The preparation method of described double-sided POLO battery, concrete steps comprise:
清洗制绒，将硅片在HCl/HNO3混合溶液中清洗，去除表面损伤层、切割线痕以及金属离子等，利用NaOH进行表面制绒，因各向异性反应，表面生成金字塔结构；Clean the texture, wash the silicon wafer in the HCl/HNO 3 mixed solution to remove the surface damage layer, cutting line marks and metal ions, etc., use NaOH to make the surface texture, due to anisotropic reaction, a pyramid structure is formed on the surface;
制备隧穿氧化层，利用湿法化学或湿法臭氧法或紫外法在硅片的双面进行生长SiOx隧穿氧化层(2)，其膜厚控制在1～10nm，随后对其进行退火；Preparing a tunnel oxide layer, using wet chemical or wet ozone method or ultraviolet method to grow SiOx tunnel oxide layer (2) on both sides of the silicon wafer, the film thickness of which is controlled at 1-10nm, and then annealed;
钝化层，利用PECVD或LPCVD在硅片的双面的SiOx隧穿氧化层(2)上制备多晶硅层(3)，其膜厚控制在1～20nm；A passivation layer, using PECVD or LPCVD to prepare a polysilicon layer (3) on the SiOx tunnel oxide layer (2) on both sides of the silicon wafer, and its film thickness is controlled at 1-20nm;
离子注入，分别对硅片的正面和背面进行离子注入，分别形成P+Ploy-Si层和N+Ploy-Si层；Ion implantation, ion implantation is performed on the front and back of the silicon wafer to form P + Ploy-Si layer and N + Ploy-Si layer respectively;
镀导电膜，利用PVD在硅片的双面，即在P+Ploy-Si层和N+Ploy-Si层沉积导电薄膜ITO，双面其方阻控制在20～200Ω；Plating conductive film, using PVD to deposit conductive film ITO on both sides of the silicon wafer, that is, on the P + Ploy-Si layer and N + Ploy-Si layer, and the square resistance of both sides is controlled at 20-200Ω;
丝网印刷，将完成ITO薄膜的硅片进行丝网印刷烧结，丝印出背电极和正电极即可。Screen printing, the silicon wafer with the ITO thin film is screen printed and sintered, and the back electrode and the positive electrode are screen printed.
本发明的有益效果是，本发明的双面POLO电池及其制备方法，利用氧化硅加多晶硅层进行双面钝化，其作用一是不仅钝化了硅片表面的表面缺陷，增加弱光的响应，也钝化了背面的金属与半导体的接触，减少了接触负电荷值；其二是由于是全钝化，没有点接触，其基区(基底区域)没有少子或多子的横向传输，其三是多晶硅为间接带隙，电流损失小。The beneficial effects of the present invention are that the double-sided POLO battery of the present invention and its preparation method utilize silicon oxide plus polysilicon layer to carry out double-sided passivation. Response, also passivates the contact between the metal and the semiconductor on the back, reducing the contact negative charge value; secondly, because it is fully passivated, there is no point contact, and the base region (substrate region) has no lateral transmission of few or many carriers. The third is that polysilicon has an indirect band gap, and the current loss is small.
附图说明Description of drawings
下面结合附图和实施例对本发明进一步说明。The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
图1是本发明制备的电池结构示意图。Fig. 1 is a schematic diagram of the battery structure prepared by the present invention.
图中：1、硅片基底，2、SiOx隧穿氧化层，3、多晶硅层，4、ITO导电薄膜层。In the figure: 1. Silicon substrate, 2. SiOx tunneling oxide layer, 3. Polysilicon layer, 4. ITO conductive film layer.
具体实施方式detailed description
现在结合附图对本发明作进一步详细的说明。这些附图均为简化的示意图，仅以示意方式说明本发明的基本结构，因此其仅显示与本发明有关的构成。The present invention is described in further detail now in conjunction with accompanying drawing. These drawings are all simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, so they only show the configurations related to the present invention.
如图1所示，是本发明最优实施例，一种双面POLO电池，包括硅片基底1，所述硅片基底1的双面由内向外依次设置有SiOx隧穿氧化层2、多晶硅层3以及ITO导电薄膜层4。As shown in Figure 1, it is the best embodiment of the present invention, a double-sided POLO battery, including a silicon wafer substrate 1, and the two sides of the silicon wafer substrate 1 are sequentially provided with SiOx tunneling oxide layer 2, polysilicon Layer 3 and ITO conductive film layer 4.
一种双面POLO电池的制备方法，包括对硅片依次进行双面清洗制绒、全钝化、离子注入、度导电薄膜和丝网印刷，全钝化工艺中采用氧化硅加多晶硅进行钝化形成全钝化层。A method for preparing a double-sided POLO battery, comprising sequentially double-sided cleaning of silicon wafers, full passivation, ion implantation, high-strength conductive film and screen printing, and silicon oxide plus polysilicon is used for passivation in the full passivation process A fully passivated layer is formed.
具体步骤包括：Specific steps include:
清洗制绒，将硅片在HCl/HNO3混合溶液中清洗，去除表面损伤层、切割线痕以及金属离子等，利用NaOH进行表面制绒，因各向异性反应，表面生成金字塔结构；Clean the texture, wash the silicon wafer in the HCl/HNO 3 mixed solution to remove the surface damage layer, cutting line marks and metal ions, etc., use NaOH to make the surface texture, due to anisotropic reaction, a pyramid structure is formed on the surface;
制备隧穿氧化层，利用湿法化学或湿法臭氧法或紫外法在硅片的双面进行生长SiOx隧穿氧化层2，其膜厚控制在1～10nm，随后对其进行退火；Preparing the tunneling oxide layer, using wet chemical or wet ozone method or ultraviolet method to grow SiOx tunneling oxide layer 2 on both sides of the silicon wafer, the film thickness of which is controlled at 1-10nm, and then annealed;
钝化层，利用PECVD或LPCVD在硅片的双面的SiOx隧穿氧化层2上制备多晶硅层(3)，其膜厚控制在1～20nm；Passivation layer, using PECVD or LPCVD to prepare a polysilicon layer (3) on the SiOx tunnel oxide layer 2 on both sides of the silicon wafer, and its film thickness is controlled at 1-20nm;
离子注入，分别对硅片的正面和背面进行离子注入进行掺杂，分别形成P+Ploy-Si层和N+Ploy-Si层；最终制备得到由氧化硅加多晶硅形成非接触式的全钝化层；(PERC是点接触式的，本发明的POLO电池的制备方法，金属和半导体是没有接触的，相对PERC的点接触，这就是非接触式的。)Ion implantation, doping the front and back of the silicon wafer by ion implantation to form P + Ploy-Si layer and N + Ploy-Si layer respectively; Finally, a non-contact full passivation formed by silicon oxide and polysilicon is prepared layer; (PERC is a point contact type, the preparation method of the POLO battery of the present invention, metal and semiconductor are not in contact, relative to the point contact of PERC, this is non-contact type.)
镀导电膜，利用PVD在硅片的双面，即在P+Ploy-Si层和N+Ploy-Si层沉积导电薄膜ITO，双面其方阻控制在20～200Ω；Plating conductive film, using PVD to deposit conductive film ITO on both sides of the silicon wafer, that is, on the P + Ploy-Si layer and N + Ploy-Si layer, and the square resistance of both sides is controlled at 20-200Ω;
丝网印刷，将完成ITO薄膜的硅片进行丝网印刷烧结，丝印出背电极和正电极即可。所述全钝化的具体包括：Screen printing, the silicon wafer with the ITO thin film is screen printed and sintered, and the back electrode and the positive electrode are screen printed. The full passivation specifically includes:
以上述依据本发明的理想实施例为启示，通过上述的说明内容，相关工作人员完全可以在不偏离本项发明技术思想的范围内，进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容，必须要根据权利要求范围来确定其技术性范围。Inspired by the above-mentioned ideal embodiment according to the present invention, through the above-mentioned description content, relevant workers can make various changes and modifications within the scope of not departing from the technical idea of the present invention. The technical scope of the present invention is not limited to the content in the specification, but must be determined according to the scope of the claims.
Claims (4)
- A kind of 1. two-sided POLO batteries, it is characterised in that：Including silicon chip substrate (1), the silicon chip substrate (1) it is two-sided by introversion It is disposed with SiOx tunnel oxides (2), polysilicon layer (3) and ITO conductive membrane layers (4) outside.
- 2. a kind of preparation method of two-sided POLO batteries, including carry out two-sided cleaning and texturing, full passivation, ion note successively to silicon chip Enter, plate conductive film and silk-screen printing, it is characterised in that：Crystal silicon is added in the full passivation technology using silica to be passivated Form full passivation layer.
- 3. the preparation method of two-sided POLO batteries as claimed in claim 2, it is characterised in that：The specific bag being passivated entirely Include：SiOx tunnel oxides (2) are first prepared in the two-sided of silicon chip using wet chemistry or wet oxygen method or ultraviolet method, are recycled PECVD or LPCVD prepares polysilicon layer (3) on the two-sided SiOx tunnel oxides (2) of silicon chip, recycles ion implanting point The other front and back to silicon chip is doped, and is finally prepared and is added crystal silicon by silica and form contactless full passivation Layer.
- 4. the preparation method of two-sided POLO batteries as claimed in claim 2, it is characterised in that：Specific steps include：Cleaning and texturing, by silicon chip in HCl/HNO3Cleaned in mixed solution, remove surface damage layer, cutting stria and metal from Son etc., surface wool manufacturing is carried out using NaOH, because of anisotropic reactive, Surface Creation pyramid structure；Tunnel oxide is prepared, carries out growing SiOx tunnels in the two-sided of silicon chip using wet chemistry or wet method Ozone or ultraviolet method Wear oxide layer (2), its film thickness monitoring is then annealed to it in 1~10nm；Passivation layer, polysilicon layer (3) is prepared on the two-sided SiOx tunnel oxides (2) of silicon chip using PECVD or LPCVD, Its film thickness monitoring is in 1~20nm；Ion implanting, ion implanting is carried out to the front and back of silicon chip respectively, forms P respectively+Ploy-Si layers and N+Ploy-Si Layer；Conducting film is plated, using PVD in the two-sided of silicon chip, i.e., in P+Ploy-Si layers and N+Ploy-Si layers deposit conductive film ITO, Two-sided its sheet resistance control is in 20~200 Ω；Silk-screen printing, the silicon chip for completing ito thin film is subjected to silk-screen printing sintering, silk-screen goes out back electrode and positive electrode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710549208.2A CN107342332A (en) | 2017-07-07 | 2017-07-07 | Two-sided POLO batteries and preparation method thereof |
| PCT/CN2018/090560 WO2019007188A1 (en) | 2017-07-07 | 2018-06-11 | DOUBLE-SIDED POLO CELL AND METHOD FOR MANUFACTURING THE SAME |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710549208.2A CN107342332A (en) | 2017-07-07 | 2017-07-07 | Two-sided POLO batteries and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107342332A true CN107342332A (en) | 2017-11-10 |
Family
ID=60218523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710549208.2A Pending CN107342332A (en) | 2017-07-07 | 2017-07-07 | Two-sided POLO batteries and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107342332A (en) |
| WO (1) | WO2019007188A1 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994093A (en) * | 2017-12-04 | 2018-05-04 | 孙健春 | A kind of solar cell and its manufacture method |
| CN108538952A (en) * | 2018-05-18 | 2018-09-14 | 东方环晟光伏（江苏）有限公司 | Crystalline silicon high performance solar batteries structure and preparation method thereof |
| WO2019007188A1 (en) * | 2017-07-07 | 2019-01-10 | 常州亿晶光电科技有限公司 | DOUBLE-SIDED POLO CELL AND METHOD FOR MANUFACTURING THE SAME |
| CN109935659A (en) * | 2019-03-21 | 2019-06-25 | 河海大学常州校区 | A kind of preparation method of P type solar cell |
| CN110061086A (en) * | 2019-04-04 | 2019-07-26 | 国家电投集团西安太阳能电力有限公司 | HBC solar cell |
| CN110649104A (en) * | 2019-09-19 | 2020-01-03 | 苏州拓升智能装备有限公司 | A solar cell with high photoelectric conversion efficiency |
| CN111048625A (en) * | 2019-12-26 | 2020-04-21 | 浙江晶科能源有限公司 | A kind of preparation method of passivation contact P-type battery |
| CN111326606A (en) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N-type split solar cell structure and fabrication method thereof |
| CN111640826A (en) * | 2020-06-10 | 2020-09-08 | 蒙城县比太新能源发展有限公司 | Preparation method of battery conducting by utilizing selective contact |
| CN117525180A (en) * | 2024-01-05 | 2024-02-06 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN117525179A (en) * | 2024-01-05 | 2024-02-06 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN118969891A (en) * | 2024-10-15 | 2024-11-15 | 苏州腾晖光伏技术有限公司 | TOPCon solar cell and method for manufacturing the same |
| WO2024260283A1 (en) * | 2023-06-20 | 2024-12-26 | 常州时创能源股份有限公司 | Preparation method for topcon double-polo battery structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103699A (en) * | 2013-04-03 | 2014-10-15 | Lg电子株式会社 | Solar cell |
| CN105185866A (en) * | 2015-08-15 | 2015-12-23 | 常州天合光能有限公司 | Efficient passivation contact crystalline silicon solar cell preparation method |
| CN205657066U (en) * | 2016-04-28 | 2016-10-19 | 乐叶光伏科技有限公司 | Back passivation contact battery electrode structure |
| CN106784128A (en) * | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | The preparation method of preceding emitter junction back side tunnel oxidation passivation contact high-efficiency battery |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050189015A1 (en) * | 2003-10-30 | 2005-09-01 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
| SG175752A1 (en) * | 2009-04-21 | 2011-12-29 | Tetrasun Inc | High-efficiency solar cell structures and methods of manufacture |
| CN105742391B (en) * | 2016-04-27 | 2017-03-08 | 中国科学院宁波材料技术与工程研究所 | A kind of tunneling silicon oxygen nitrogen layer passivation contact solar cell and preparation method thereof |
| CN107342332A (en) * | 2017-07-07 | 2017-11-10 | 常州亿晶光电科技有限公司 | Two-sided POLO batteries and preparation method thereof |
-
2017
- 2017-07-07 CN CN201710549208.2A patent/CN107342332A/en active Pending
-
2018
- 2018-06-11 WO PCT/CN2018/090560 patent/WO2019007188A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103699A (en) * | 2013-04-03 | 2014-10-15 | Lg电子株式会社 | Solar cell |
| CN105185866A (en) * | 2015-08-15 | 2015-12-23 | 常州天合光能有限公司 | Efficient passivation contact crystalline silicon solar cell preparation method |
| CN106784128A (en) * | 2015-11-20 | 2017-05-31 | 上海神舟新能源发展有限公司 | The preparation method of preceding emitter junction back side tunnel oxidation passivation contact high-efficiency battery |
| CN205657066U (en) * | 2016-04-28 | 2016-10-19 | 乐叶光伏科技有限公司 | Back passivation contact battery electrode structure |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019007188A1 (en) * | 2017-07-07 | 2019-01-10 | 常州亿晶光电科技有限公司 | DOUBLE-SIDED POLO CELL AND METHOD FOR MANUFACTURING THE SAME |
| CN107994093A (en) * | 2017-12-04 | 2018-05-04 | 孙健春 | A kind of solar cell and its manufacture method |
| CN108538952A (en) * | 2018-05-18 | 2018-09-14 | 东方环晟光伏（江苏）有限公司 | Crystalline silicon high performance solar batteries structure and preparation method thereof |
| CN109935659A (en) * | 2019-03-21 | 2019-06-25 | 河海大学常州校区 | A kind of preparation method of P type solar cell |
| CN110061086A (en) * | 2019-04-04 | 2019-07-26 | 国家电投集团西安太阳能电力有限公司 | HBC solar cell |
| CN110649104A (en) * | 2019-09-19 | 2020-01-03 | 苏州拓升智能装备有限公司 | A solar cell with high photoelectric conversion efficiency |
| CN111048625B (en) * | 2019-12-26 | 2021-10-22 | 浙江晶科能源有限公司 | A kind of preparation method of passivation contact P-type battery |
| CN111048625A (en) * | 2019-12-26 | 2020-04-21 | 浙江晶科能源有限公司 | A kind of preparation method of passivation contact P-type battery |
| CN111326606A (en) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N-type split solar cell structure and fabrication method thereof |
| CN111640826A (en) * | 2020-06-10 | 2020-09-08 | 蒙城县比太新能源发展有限公司 | Preparation method of battery conducting by utilizing selective contact |
| WO2024260283A1 (en) * | 2023-06-20 | 2024-12-26 | 常州时创能源股份有限公司 | Preparation method for topcon double-polo battery structure |
| CN117525180A (en) * | 2024-01-05 | 2024-02-06 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN117525179A (en) * | 2024-01-05 | 2024-02-06 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN117525180B (en) * | 2024-01-05 | 2024-03-12 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN117525179B (en) * | 2024-01-05 | 2024-04-02 | 通威太阳能(眉山)有限公司 | Solar cell and preparation method thereof, photovoltaic module |
| CN118969891A (en) * | 2024-10-15 | 2024-11-15 | 苏州腾晖光伏技术有限公司 | TOPCon solar cell and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019007188A1 (en) | 2019-01-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107342332A (en) | Two-sided POLO batteries and preparation method thereof | |
| CN109244194B (en) | A preparation method of low-cost p-type all-back-electrode crystalline silicon solar cell | |
| WO2023178918A1 (en) | Low-cost contact-passivation all-back electrode solar cell and preparation method therefor | |
| CN107195699A (en) | One kind passivation contact solar cell and preparation method | |
| CN103996746B (en) | Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced | |
| CN108321239A (en) | A kind of solar energy hetero-junction solar cell and preparation method thereof | |
| CN113284982B (en) | Processing technology of IBC battery with passivation contact structure | |
| CN110061072A (en) | TBC solar cell structure and preparation method thereof | |
| CN104752529B (en) | 3D printed tapered electrode structure of solar cell | |
| CN107799616B (en) | A kind of interdigital back-contact solar cell and its production method | |
| CN106784129A (en) | The preparation method of emitter junction back side tunnel oxidation passivation contact high-efficiency battery | |
| CN115020538B (en) | A P-type IBC single crystal solar cell and its preparation method | |
| CN106486554B (en) | A kind of method for realizing the passivation of N-type double-side cell tunnel oxide | |
| CN117497628A (en) | A double-sided tunnel passivation contact solar cell structure and its preparation method | |
| CN107785457A (en) | A kind of manufacture craft of the two-sided crystal silicon solar battery of p-type | |
| CN114464687B (en) | Local double-sided tunneling passivation contact structure battery and preparation method thereof | |
| CN109378356A (en) | Preparation method of IBC solar cell | |
| CN103594530A (en) | Crystalline silicon solar cell combining obverse side thermal oxidation, selective emitter junctions and reverse passivation and manufacturing method thereof | |
| CN107275418A (en) | One side POLO batteries and preparation method thereof | |
| CN208336240U (en) | Solar battery and solar cell module | |
| CN109755330B (en) | Prediffusion sheet for passivating contact structure, preparation method and application thereof | |
| CN108172637A (en) | A kind of polycrystalline gallium-doped rear passivation solar cell and preparation method thereof | |
| CN108133976A (en) | A kind of monocrystalline mixes gallium back of the body passivating solar battery and preparation method thereof | |
| CN110600583A (en) | Low-cost low-contact-resistance metallization method suitable for solar cell | |
| CN107546281A (en) | A method of realizing passivation contact on the front side of P-type PERC cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171110 |
|
| RJ01 | Rejection of invention patent application after publication |