CN110061086A - A kind of HBC solar battery - Google Patents
A kind of HBC solar battery Download PDFInfo
- Publication number
- CN110061086A CN110061086A CN201910269928.2A CN201910269928A CN110061086A CN 110061086 A CN110061086 A CN 110061086A CN 201910269928 A CN201910269928 A CN 201910269928A CN 110061086 A CN110061086 A CN 110061086A
- Authority
- CN
- China
- Prior art keywords
- silicon substrate
- crystalline silicon
- solar battery
- back surface
- front surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 32
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 239000004411 aluminium Substances 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229920005591 polysilicon Polymers 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract description 5
- 239000003795 chemical substances by application Substances 0.000 abstract description 4
- 238000004513 sizing Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 229910017107 AlOx Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
It is an object of the invention to disclose a kind of HBC solar battery, it includes crystalline silicon substrate, and the front surface of crystalline silicon substrate successively includes tunnel oxide, polysilicon layer and passivating film from inside to outside；The back surface of crystalline silicon substrate respectively includes intrinsic amorphous silicon layer, alternately arranged back surface n+ doped hydrogenated amorphous silicon layer and laser slotting region, passivating film and metal electrode from inside to outside；Metal electrode includes the thin grid line and main grid line electrode with the thin grid line of back surface n+ doped amorphous silicon region Ohmic contact, the backside laser fluting region P+ Ohmic contact；Compared with prior art, the front surface of crystalline silicon substrate realizes front-surface field passivation effect using tunnel oxide, reduces front surface recombination rate, improves the open-circuit voltage of battery, facilitates the promotion of battery overall performance；Using bottom silver paste, the secondary double exposure mode of upper layer aluminium paste prepares the area P+ electrode, saves cost of sizing agent, achieves the object of the present invention.
Description
Technical field
The present invention relates to a kind of solar battery structure, in particular to a kind of HBC solar battery.
Background technique
With the development of photovoltaic industry, in crystal silicon solar cell sheet production, the promotion of photoelectric conversion efficiency and electricity
The reduction of pond manufacturing cost has become the basic of entire theCourse of PV Industry, and being constantly progressive with technology, increasingly
More high-efficiency batteries enters the visual field of people.And become too as the HBC battery of HIT battery product in conjunction with IBC battery advantage
Positive energy industry future mentions the primary study object of effect.
But HBC battery peak efficiency remains at 26% or so at present, the theoretical efficiency apart from crystal silicon battery still has very
Big room for promotion.And excellent battery passivation performance is undoubtedly a quantum jump point of improved efficiency.And slurry consumption is annual
Very big share is occupied in battery production cost, therefore, how to reduce cost of sizing agent becomes the important ring that battery manufacturing cost reduces
Section.
In current solar battery process, surface passivation is generally carried out using SiO2, SiNx etc., but this high temperature is passivated
The problems such as coefficient of thermal expansion differences, thermal oxidation process between bring difference interface cause dopant redistribution drastically influences passivation
Performance；And the area P+ is carried out using silver paste completely and is printed, cost of sizing agent is high.
It is accordingly required in particular to which a kind of HBC solar battery, above-mentioned existing to solve the problems, such as.
Summary of the invention
The purpose of the present invention is to provide a kind of HBC solar batteries, in view of the deficiencies of the prior art, improve HBC too
The open-circuit voltage of positive energy battery, and then the overall performance of solar battery is promoted, and in the feelings for not reducing solar cell properties
Under condition, cost is significantly reduced.
Technical problem solved by the invention can be realized using following technical scheme:
A kind of HBC solar battery, which is characterized in that it includes crystalline silicon substrate, and the front surface of crystalline silicon substrate is from inside to outside
It successively include tunnel oxide, polysilicon layer and passivating film；The back surface of crystalline silicon substrate respectively includes intrinsic amorphous from inside to outside
Silicon layer, alternately arranged back surface n+ doped hydrogenated amorphous silicon layer and laser slotting region, passivating film and metal electrode；Metal electricity
Pole includes the thin of the region P+ Ohmic contact of slotting with the thin grid line of back surface n+ doped amorphous silicon region Ohmic contact, backside laser
Grid line and main grid line electrode.
In one embodiment of the invention, the crystalline silicon substrate is p type single crystal silicon substrate, p-type polysilicon substrate, N-type
Any one in monocrystalline substrate and N-type polycrystalline silicon substrate.
In one embodiment of the invention, the front surface of the crystalline silicon substrate and back surface are in making herbs into wool face or burnishing surface
Any one.
In one embodiment of the invention, the front surface of the crystalline silicon substrate is unmatched surface texture, N-type front-surface field
Any one in structure (FSF) and p-type front surface floating emission area structure (FFE).
In one embodiment of the invention, the passivating film of the front surface of the crystalline silicon substrate is in SiO2, SiNx, AlOx
One or two kinds of combinations.
In one embodiment of the invention, the tunnel oxide of the front surface of the crystalline silicon substrate by hot oxygen oxidation,
Any one mode in dry-oxygen oxidation or wet-oxygen oxidation is made.
In one embodiment of the invention, the thin grid line of the backside laser fluting region the P+ Ohmic contact uses bottom
It is prepared by the secondary double exposure mode of silver paste, upper layer aluminium paste.
In one embodiment of the invention, the passivating film of the back surface of the crystalline silicon substrate is in SiO2, SiNx, AlOx
One or two.
In one embodiment of the invention, the back surface main grid line electrode uses low temperature main grid silver paste, ultra-violet curing
Any one in main grid silver paste, silver-colored aluminium paste or aluminium paste.
HBC solar battery of the invention, compared with prior art, the front surface of crystalline silicon substrate are real using tunnel oxide
Show front-surface field passivation effect, reduced front surface recombination rate, improved the open-circuit voltage of battery, facilitates battery entirety
The promotion of performance；Using bottom silver paste, the secondary double exposure mode of upper layer aluminium paste prepares the area P+ electrode, saves cost of sizing agent, realizes
The purpose of the present invention.
The features of the present invention sees this case or less preferably detailed description of embodiment and is well understood.
Specific embodiment
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, tie below
It closes specifically, the present invention is further explained.
Embodiment
HBC solar battery of the invention, it includes crystalline silicon substrate, and the front surface of crystalline silicon substrate successively includes from inside to outside
Tunnel oxide, polysilicon layer and passivating film；The back surface of crystalline silicon substrate respectively includes intrinsic amorphous silicon layer, alternating from inside to outside
The back surface n+ doped hydrogenated amorphous silicon layer and laser slotting region, passivating film and metal electrode of arrangement；Metal electrode include with
The thin grid line of back surface n+ doped amorphous silicon region Ohmic contact, the thin grid line of the backside laser fluting region P+ Ohmic contact and master
Gate line electrode.
In the present embodiment, the crystalline silicon substrate is p type single crystal silicon substrate, p-type polysilicon substrate, n type single crystal silicon substrate
With any one in N-type polycrystalline silicon substrate.
In the present embodiment, the front surface of the crystalline silicon substrate and back surface are any one in making herbs into wool face or burnishing surface
Kind.
In the present embodiment, the front surface of the crystalline silicon substrate is unmatched surface texture, N-type front-surface field structure (FSF)
With any one in p-type front surface floating emission area structure (FFE).
In the present embodiment, the passivating film of the front surface of the crystalline silicon substrate is one of SiO2, SiNx, AlOx or two
The combination of kind.
In the present embodiment, the tunnel oxide of the front surface of the crystalline silicon substrate by hot oxygen oxidation, dry-oxygen oxidation or
Any one mode in wet-oxygen oxidation is made.
In the present embodiment, the thin grid line of the backside laser fluting region the P+ Ohmic contact uses bottom silver paste, upper layer
It is prepared by the secondary double exposure mode of aluminium paste.
In the present embodiment, the passivating film of the back surface of the crystalline silicon substrate is one of SiO2, SiNx, AlOx or two
Kind.
In the present embodiment, the back surface main grid line electrode uses low temperature main grid silver paste, ultra-violet curing main grid silver paste, silver
Any one in aluminium paste or aluminium paste.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention, the claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (9)
1. a kind of HBC solar battery, which is characterized in that it includes crystalline silicon substrate, the front surface of crystalline silicon substrate from inside to outside according to
Secondary includes tunnel oxide, polysilicon layer and passivating film；The back surface of crystalline silicon substrate respectively includes intrinsic amorphous silicon from inside to outside
Layer, alternately arranged back surface n+ doped hydrogenated amorphous silicon layer and laser slotting region, passivating film and metal electrode；Metal electrode
Thin grid including thin grid line, the backside laser fluting region P+ Ohmic contact with back surface n+ doped amorphous silicon region Ohmic contact
Line and main grid line electrode.
2. HBC solar battery as described in claim 1, which is characterized in that the crystalline silicon substrate is p type single crystal silicon substrate, P
Any one in type multicrystalline silicon substrate, n type single crystal silicon substrate and N-type polycrystalline silicon substrate.
3. HBC solar battery as described in claim 1, which is characterized in that the front surface and back surface of the crystalline silicon substrate
For any one in making herbs into wool face or burnishing surface.
4. HBC solar battery as described in claim 1, which is characterized in that the front surface of the crystalline silicon substrate is unmatched table
Any one in face structure, N-type front-surface field structure (FSF) and p-type front surface floating emission area structure (FFE).
5. HBC solar battery as described in claim 1, which is characterized in that the passivating film of the front surface of the crystalline silicon substrate
For the combination of one or both of SiO2, Si Nx, A l Ox.
6. HBC solar battery as described in claim 1, which is characterized in that the tunnelling oxygen of the front surface of the crystalline silicon substrate
Change layer is aoxidized by hot oxygen, any one mode in dry-oxygen oxidation or wet-oxygen oxidation is made.
7. HBC solar battery as described in claim 1, which is characterized in that the backside laser fluting region P+ ohm connects
The thin grid line of touching uses bottom silver paste, prepared by the secondary double exposure mode of upper layer aluminium paste.
8. HBC solar battery as described in claim 1, which is characterized in that the passivating film of the back surface of the crystalline silicon substrate
For one or both of S iO2, SiNx, A l Ox.
9. HBC solar battery as described in claim 1, which is characterized in that the back surface main grid line electrode uses low temperature
Main grid silver paste, any one in ultra-violet curing main grid silver paste, silver-colored aluminium paste or aluminium paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910269928.2A CN110061086A (en) | 2019-04-04 | 2019-04-04 | A kind of HBC solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910269928.2A CN110061086A (en) | 2019-04-04 | 2019-04-04 | A kind of HBC solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110061086A true CN110061086A (en) | 2019-07-26 |
Family
ID=67318266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910269928.2A Pending CN110061086A (en) | 2019-04-04 | 2019-04-04 | A kind of HBC solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110061086A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111799348A (en) * | 2020-06-10 | 2020-10-20 | 中国科学院微电子研究所 | Heterojunction back contact solar cell and forming method thereof |
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| CN105794004A (en) * | 2013-12-20 | 2016-07-20 | 太阳能公司 | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
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| CN108054223A (en) * | 2018-01-11 | 2018-05-18 | 天合光能股份有限公司 | A kind of all back-contact electrodes solar cell based on passivation contact technique |
| CN109545901A (en) * | 2018-11-28 | 2019-03-29 | 国家电投集团西安太阳能电力有限公司 | The production method of IBC battery |
-
2019
- 2019-04-04 CN CN201910269928.2A patent/CN110061086A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006135443A2 (en) * | 2004-10-29 | 2006-12-21 | Bp Corporation North America Inc. | Back-contact photovoltaic cells |
| CN104952943A (en) * | 2009-04-21 | 2015-09-30 | 泰特拉桑有限公司 | High-efficiency solar cell structures and methods of manufacture |
| CN104103699A (en) * | 2013-04-03 | 2014-10-15 | Lg电子株式会社 | Solar cell |
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| CN105794004A (en) * | 2013-12-20 | 2016-07-20 | 太阳能公司 | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
| CN106129133A (en) * | 2016-06-27 | 2016-11-16 | 泰州乐叶光伏科技有限公司 | A kind of all back-contact electrodes contact crystal silicon solar batteries structure and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111799348A (en) * | 2020-06-10 | 2020-10-20 | 中国科学院微电子研究所 | Heterojunction back contact solar cell and forming method thereof |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20201119 Address after: 710099 589 East Chang'an Street, Xi'an Space Base, Shaanxi Province Applicant after: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Applicant after: Huanghe hydropower Xining Solar Power Co.,Ltd. Applicant after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Applicant after: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Address before: 710099 589 East Chang'an Street, Xi'an Space Base, Shaanxi Province Applicant before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Applicant before: XINING BRANCH OF SPIC XI'AN SOLAR POWER Co.,Ltd. Applicant before: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Applicant before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. |
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Application publication date: 20190726 |
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