CN113130670A - Europium oxide/platinum passivated contact crystalline silicon solar cell and preparation method thereof - Google Patents
Europium oxide/platinum passivated contact crystalline silicon solar cell and preparation method thereof Download PDFInfo
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- CN113130670A CN113130670A CN202110425826.2A CN202110425826A CN113130670A CN 113130670 A CN113130670 A CN 113130670A CN 202110425826 A CN202110425826 A CN 202110425826A CN 113130670 A CN113130670 A CN 113130670A
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 229910001940 europium oxide Inorganic materials 0.000 title claims abstract description 32
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 29
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- 229910052709 silver Inorganic materials 0.000 claims description 21
- 239000004332 silver Substances 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 229910003446 platinum oxide Inorganic materials 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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Abstract
The invention discloses an europium oxide/platinum passivated contact crystalline silicon solar cell and a preparation method thereof. According to the invention, the ultrathin europium oxide film is used as a back passivation layer of n-type crystalline silicon, and the high-work-function metal platinum is used as an electron collection layer, so that passivation contact on the back of the crystalline silicon solar cell is realized, and the problems that the lattice integrity of the silicon oxide film is changed, the density of pinhole defects is increased, doped atoms in polycrystalline silicon are diffused to the silicon oxide and the crystalline silicon and the like in the high-temperature treatment process of the TOPCon cell can be effectively avoided.
Description
Technical Field
The invention belongs to the field of crystalline silicon solar cells, and relates to a europium oxide/platinum passivation contact crystalline silicon solar cell technology.
Background
Compared with the traditional aluminum back field solar cell, the passivated contact crystalline silicon solar cell has obvious advantages in the aspects of enhancing surface passivation and carrier collection, for example, serious carrier recombination caused by direct contact of a metal electrode and crystalline silicon and auger recombination in a heavily doped aluminum back field region are avoided, and therefore, the passivated contact cell has higher open-circuit voltage and filling factor. The technique of passivating contact of a tunneling oxide layer (TOPCon) is a very hot high-efficiency crystalline silicon cell technique in the photovoltaic industry at present, and is characterized in that ultrathin silicon oxide serving as a tunneling layer and heavily doped polycrystalline silicon serving as a current carrier collecting layer are inserted between a metal electrode and crystalline silicon, so that the full-surface passivation and selective contact of a silicon wafer are realized. With the deep knowledge of TOPCon technology, it was found that there are some problems to be solved: 1) in the subsequent high-temperature treatment process of the battery, the components and the lattice integrity of the silicon oxide can be changed, so that the chemical passivation effect of the silicon oxide on crystalline silicon is reduced; 2) the silicon oxide can generate pinhole defects in the high-temperature process, so that the carrier recombination is increased; 3) in the high-temperature treatment process, the doping atoms of the polycrystalline silicon film can penetrate through the oxide layer and enter the silicon wafer to form a near-surface heavily-doped region, so that the effects of separating and collecting carriers are reduced. Therefore, finding more suitable full-surface passivation and selective contact technology to realize excellent passivation and good electrical contact to crystalline silicon is very important to further improve the efficiency of crystalline silicon solar cells.
Besides low interface defect state density, the europium oxide has good high-temperature thermal stability, and in the subsequent sintering process of the crystalline silicon battery, the europium oxide has small component and lattice integrity change and generates few pinhole defects, so that the europium oxide is very suitable to be used as a low-cost passivation layer of a carrier selection structure. Besides, the europium oxide has a fluorescence up-conversion function, and can convert ultraviolet light in a solar spectrum into visible light, so that the conversion efficiency of the cell is improved. n-type crystalline silicon (doping concentration 10)16cm-3) Has a work function of 4.25eV, and metals with work functions higher than 4.25eV and contacts can act as electron collectors. Unlike metal oxides or metal fluorides, high work function metals are used because of the avoidance of strict thickness control during fabricationAn electron selective contact layer on the back side of the cell simplifies the process. The work function of the metal platinum is 5.65eV, the metal platinum has excellent thermal stability, and the metal platinum is very suitable for replacing a polycrystalline silicon layer in a TOPCon battery as a carrier collecting layer, so that the polycrystalline silicon is effectively prevented from diffusing from doping atoms to a passivation layer and crystalline silicon in the high-temperature sintering process of the battery.
Disclosure of Invention
The invention aims to provide a europium oxide/platinum passivated contact crystalline silicon solar cell and a preparation method thereof.
Therefore, the technical scheme adopted by the invention is as follows: europium oxide/platinum passivation contact crystalline silicon solar cell is characterized in that: the structure layer sequentially comprises the following structural layers: silver/platinum/europium oxide/n-type monocrystalline silicon piece/boron-doped p-type silicon/silicon oxide/silicon nitride, wherein the boron-doped p-type silicon piece is also provided with a silver electrode.
The thickness of the europium oxide layer is 2-3 nm; the thickness of the platinum layer is 10-20 nm.
Another technical solution of the present invention is as follows: the preparation method of the europium oxide/platinum passivated contact crystalline silicon solar cell is characterized by comprising the following steps of: comprises the following steps:
1) cleaning and polishing the n-type monocrystalline silicon;
2) growing silicon nitride on the back;
3) texturing the front surface;
4) front surface boron diffusion;
5) growing an aluminum oxide layer and a silicon nitride layer on the front surface;
6) growing a silver electrode on the front surface, and after the growth of the silver electrode is finished, carrying out annealing treatment at the temperature of 900-1000 ℃ in a nitrogen atmosphere for 1-2 min;
7) growing a europium oxide layer on the back;
8) growing metal platinum on the back;
9) and growing a silver electrode on the back surface.
The invention adopts an ultrathin europium oxide film (2-3nm) as a back passivation layer of n-type crystalline silicon, and high-work-function metal platinum (10-20 nm) as an electron collection layer. The passivation contact on the back of the crystalline silicon solar cell is realized, the problems that the lattice integrity of a silicon oxide film of the TOPCon cell is changed in the high-temperature treatment process, the density of pinhole defects is increased, doping atoms in polycrystalline silicon are diffused to the silicon oxide and the crystalline silicon and the like can be effectively solved, and the excellent surface passivation and good electrical contact on the crystalline silicon are realized. In order to further reduce the defect density in the europium oxide and the interface state density between the europium oxide and silicon, annealing treatment needs to be carried out at the temperature of 900-1000 ℃ in a hydrogen atmosphere after the deposition of the europium oxide film is finished.
Drawings
The following detailed description is made with reference to the accompanying drawings and embodiments of the present invention
Fig. 1 is a schematic diagram of the battery structure of the present invention.
Detailed Description
The solar cell described in this embodiment has a structure as shown in fig. 1, and sequentially has the following structural layers: the device comprises a first silver electrode 1, a platinum layer 2 (10-20 nm), an europium oxide layer 3 (2-3nm), an n-type monocrystalline silicon wafer 4, boron-doped p-type silicon 5 and a silicon oxide/silicon nitride layer 6, wherein a second silver electrode 7 is arranged on the boron-doped p-type silicon wafer.
During preparation:
1) silicon wafer cleaning
Firstly, ultrasonically cleaning an n-type monocrystalline silicon (n-c-Si) sheet with two unpolished sides by using acetone and ethanol in sequence to remove oil stains and dirt on the surface; secondly, performing water bath treatment for 20min at the temperature of 80 ℃ by adopting a potassium hydroxide solution with the concentration of 20-30 wt% to remove a surface damage layer; and finally, corroding for 2min at normal temperature by using a mixed solution of nitric acid, hydrofluoric acid and glacial acetic acid (the volume ratio is 3:3:1), chemically polishing the surface of the silicon wafer to obtain a flat surface, repeatedly washing for more than 3 times by using deionized water, and drying by using nitrogen.
2) Back growth of silicon nitride
And growing a silicon nitride film with the thickness of 200nm on the back of the silicon wafer by utilizing Plasma Enhanced Chemical Vapor Deposition (PECVD), and blocking boron diffusion in the subsequent process. Electronic-grade ammonia gas and silane are respectively used as a nitrogen source and a silicon source, the growth temperature is 400-500 ℃, and the flow ratio of the ammonia gas to the silane is 4-8: 1.
3) Front surface texturing
Treating for 10-20 min under the water bath condition at 80 ℃ by adopting a solution system of 2-3 wt% of potassium hydroxide and 8-12 vol% of isopropanol, then washing with deionized water, and drying with nitrogen.
4) Front surface boron diffusion (boron doped emitter)
A ceramic piece of boron nitride (with purity greater than 99.99%) is used as a boron diffusion source. The temperature of the diffusion furnace is set to be 1000-1100 ℃, the diffusion time is 20-30 min, and nitrogen is introduced into the furnace as protective gas. And after the diffusion is finished, closing the power supply of the diffusion furnace, naturally cooling to room temperature in the nitrogen atmosphere, and taking out the silicon wafer. And then, putting the silicon wafer into a hydrofluoric acid solution (5-12 wt%) to be soaked for 1-2 min at room temperature, removing the residual borosilicate glass (BSG) on the surface of the silicon wafer, and removing the silicon nitride protective layer on the back of the silicon wafer. And finally, removing the boron diffusion layer at the edge of the silicon wafer by adopting plasma dry etching to prevent the edge from forming a short circuit.
5) Growing an aluminum oxide/silicon nitride passivation layer and an anti-reflection layer on the front surface
In the process of growing alumina by using an Atomic Layer Deposition (ALD) method, Trimethylaluminum (TMA) is used as an aluminum source, and water (H)2O) as an oxygen source. By controlling TMA and H2And the O enters the reaction cavity in sequence to obtain the alumina. The alumina thickness of the film is adjusted by controlling the reaction period, and the typical thickness is 2-3 nm.
The silicon nitride film is deposited by a PECVD method, electronic-grade ammonia gas and silane are respectively used as a nitrogen source and a silicon source, the flow ratio of the ammonia gas to the silane is 1: 2-6, the growth temperature is 200-300 ℃, and the thickness of the silicon nitride film is 80-100 nm.
6) Front surface silver electrode
The front surface of the silicon chip is used for growing a silver electrode with the thickness of 500nm by a magnetron sputtering method, and the front surface is used for forming a silver grid line electrode by a grid line mask plate. The sputtering target material is metallic silver, and the background vacuum of the sputtering cavity is better than 1 multiplied by 10-3Pa, argon as working gas, 1.0Pa as working gas pressure, room temperature as sputtering temperature, and 1-3W/cm of sputtering power2. After the growth of the silver electrode on the front surface of the silicon wafer is finished, the growth rate is 900-100And (3) annealing at the temperature of 0 ℃ in a nitrogen atmosphere for 1-2 min. At high temperature, the ultra-thin aluminum oxide (2-3nm) layer is cracked, and silver can penetrate through the silicon nitride and the ultra-thin aluminum oxide layer to form good ohmic contact with the boron-doped emitter.
7) Growth of europium oxide on the back
And (3) growing a europium oxide film on the back of the silicon wafer by using a magnetron sputtering method, wherein the thickness of the europium oxide film is 2-3 nm. The specific process comprises the following steps: the sputtering target material is europium oxide ceramic target, argon gas is working gas, and the purity of the europium oxide ceramic target and the argon gas is greater than 99.999 percent. The background vacuum of the sputtering cavity is better than 1 x 10-4And Pa, performing pre-sputtering on the target for 10min before the film grows to remove an oxide layer on the surface of the target and adsorbed impurities. The flow rate of argon is 30sccm respectively, the substrate temperature is 350-450 ℃, the working pressure is 0.3-0.5 Pa, and the sputtering power is 5-10W. And after the growth of the europium oxide film is finished, putting the silicon wafer into a high-temperature furnace, and annealing for 5-10 min at the temperature of 900-1000 ℃ in a hydrogen atmosphere.
8) Back growth of metal platinum
And growing a platinum film with the thickness of 10-20nm on the back of the silicon wafer by adopting an evaporation plating method. The vacuum degree of the cavity is better than 1 multiplied by 10-4Pa, regulating the heating current to ensure that the platinum evaporation rate is 0.1nm/s, and opening a baffle after the rate is stable to start evaporation. When the thickness reaches 10-20nm, the baffle is closed, and the heating current is closed.
9) Back surface silver electrode
And (3) growing silver with the thickness of 500nm on the back surface of the silicon wafer by utilizing the same magnetron sputtering process as the step 6) at room temperature to form a back silver electrode.
Claims (3)
1. Europium oxide/platinum passivation contact crystalline silicon solar cell is characterized in that: the structure layer sequentially comprises the following structural layers: silver/platinum/europium oxide/n-type monocrystalline silicon piece/boron-doped p-type silicon/silicon oxide/silicon nitride, wherein the boron-doped p-type silicon piece is also provided with a silver electrode.
2. The europium oxide/platinum passivated contact crystalline silicon solar cell of claim 1, wherein: the thickness of the europium oxide layer is 2-3 nm; the thickness of the platinum layer is 10-20 nm.
3. The method for preparing a europium oxide/platinum passivated contact crystalline silicon solar cell of claim 1, wherein the method comprises the following steps: comprises the following steps:
1) cleaning and polishing the n-type monocrystalline silicon;
2) growing silicon nitride on the back;
3) texturing the front surface;
4) front surface boron diffusion;
5) growing an aluminum oxide layer and a silicon nitride layer on the front surface;
6) growing a silver electrode on the front surface, and after the growth of the silver electrode is finished, carrying out annealing treatment at the temperature of 900-1000 ℃ in a nitrogen atmosphere for 1-2 min;
7) growing a europium oxide layer on the back;
8) growing metal platinum on the back;
9) and growing a silver electrode on the back surface.
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