CN115132852A - N-type TOPCon solar cell and manufacturing method thereof - Google Patents
N-type TOPCon solar cell and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
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- 239000000758 substrate Substances 0.000 claims abstract description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
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- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 43
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 43
- 230000005641 tunneling Effects 0.000 claims abstract description 38
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000002161 passivation Methods 0.000 claims abstract description 33
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 22
- 239000011574 phosphorus Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 56
- 238000009792 diffusion process Methods 0.000 claims description 26
- 229920005591 polysilicon Polymers 0.000 claims description 26
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 22
- 229910052796 boron Inorganic materials 0.000 claims description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
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- 229910052799 carbon Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
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Abstract
An N-type TOPCon solar cell and a manufacturing method thereof are provided, wherein the N-type TOPCon solar cell comprises an N-type silicon wafer substrate; the emitter layer is formed in the N-type silicon wafer substrate and is positioned on one side of the front surface of the substrate; a passivation film laminated on the emitter layer; the tunneling oxide layer, the carbon-doped silicon dioxide layer and the phosphorus-doped polycrystalline silicon layer are sequentially stacked on the back surface of the N-type silicon wafer substrate; a second silicon nitride layer stacked on the phosphorus-doped polycrystalline silicon layer; a front electrode and a back electrode. According to the manufacturing method, the carbon-doped silicon dioxide layer is added between the tunneling oxide layer and the phosphorus-doped polycrystalline silicon layer on the back of the battery, so that phosphorus ions are prevented from diffusing into the tunneling oxide layer, the problem of reduction of tunneling effect is solved, and the edge of the battery is cut by using laser equipment to realize edge insulation. Therefore, the N-type TOPCon solar cell can greatly improve the open-circuit voltage of the cell and reduce the edge leakage current, thereby improving the conversion efficiency of the cell.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to an N-type TOPCon solar cell and a manufacturing method thereof.
Background
At present, P-type PERC batteries still occupy the mainstream in the photovoltaic market, but due to the defects of P-type silicon wafers, the P-type PERC batteries encounter a bottleneck in the aspect of technical updating. Therefore, in order to maintain the competitiveness of the industry, the production line technology needs to be continuously upgraded, and with the development of the thin film technology, the technology of the N-type crystalline silicon solar cell is rapidly developed and far ahead of the P-type crystalline silicon cell in terms of cell efficiency, stability and the like. Among them, the high-efficiency battery technology based on the N-type TOPCon (tunneling, oxidation, passivation, and contact) battery is gradually becoming the target of technology transformation of various manufacturers due to the low cost of production line upgrade and the high efficiency improvement potential. The existing TOPCon battery core procedure mainly adopts a method that firstly a polysilicon layer and a tunneling oxide layer are deposited on both sides and then phosphorus diffusion is carried out on both sides, then a chemical etching method is utilized to remove a tunneling oxidation passivation contact layer formed on the front side of the battery, and only the tunneling oxidation passivation contact layer formed on the back side of the battery is reserved. However, this process still has a major drawback, which hinders the improvement of the efficiency of TOPCon cells. On one hand, the process method realizes phosphorus doping by adopting a diffusion method, the doping junction depth is difficult to control, and a phosphorus doping source is easy to diffuse into a tunneling oxide layer, so that the tunneling effect is reduced; on the other hand, the TOPCon battery prepared by the method has the problem of battery edge leakage.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides an N-type TOPCon solar cell and a manufacturing method thereof.
According to an aspect of an embodiment of the present invention, there is provided an N-type topocon solar cell including: an N-type silicon wafer substrate; the emitter layer is formed in the N-type silicon wafer substrate and is positioned on one side of the front surface of the N-type silicon wafer substrate; a passivation film laminated on the emitter layer; wherein the passivation film includes an aluminum oxide layer and a first silicon nitride layer which are sequentially stacked; the tunneling oxide layer, the carbon-doped silicon dioxide layer and the phosphorus-doped polycrystalline silicon layer are sequentially stacked on the back surface of the N-type silicon wafer substrate, and the front surface and the back surface of the substrate are opposite to each other; the second silicon nitride layer is arranged on the phosphorus-doped polycrystalline silicon layer; a front electrode and a back electrode, the front electrode penetrating the passivation film to be in contact with the emitter layer; the back electrode penetrates through the second silicon nitride layer to be in contact with the phosphorus-doped polycrystalline silicon layer.
According to another aspect of the embodiments of the present invention, there is provided a method for fabricating an N-type TOPCon solar cell, the method comprising: carrying out boron diffusion treatment on the front surface of the N-type silicon wafer substrate to form an emitter layer; sequentially forming a tunneling oxide layer, a carbon-doped silicon dioxide layer and a phosphorus-doped polysilicon layer which are stacked on the back surface of the N-type silicon wafer substrate; cutting the edge of the preset position away from the edge of the N-type silicon wafer substrate by using laser equipment; forming a passivation film on the emitter layer, and forming a second silicon nitride layer on the phosphorus-doped polycrystalline silicon layer; and forming a front electrode penetrating through the passivation film and contacting with the emitter layer on the first silicon nitride layer, and forming a back electrode penetrating through the second silicon nitride layer and contacting with the phosphorus-doped polysilicon layer on the second silicon nitride layer to obtain the N-type TOPCon solar cell.
In an example of the method for manufacturing an N-type TOPCon solar cell provided in another aspect of the foregoing embodiments, the method for sequentially forming a tunnel oxide layer, a carbon-doped silicon dioxide layer, and a phosphorus-doped polysilicon layer stacked on a back surface of the N-type silicon wafer substrate includes: forming a tunneling oxide layer on the back surface of the N-type silicon wafer substrate; forming a carbon-doped silicon dioxide layer on the tunneling oxide layer; forming an intrinsic polycrystalline silicon layer on the carbon-doped silicon dioxide layer; and carrying out phosphorus doping on the intrinsic polycrystalline silicon layer by adopting phosphorus diffusion equipment to form the phosphorus-doped polycrystalline silicon layer.
In another aspect of the foregoing embodiments, there is provided a method for fabricating an N-type TOPCon solar cell, the method for forming a carbon-doped silicon dioxide layer on the tunneling oxide layer includes: and introducing carbon dioxide gas into the plasma enhanced chemical vapor deposition equipment to perform carbon doping in the process of forming the silicon dioxide layer by using the plasma enhanced chemical vapor deposition method, so as to obtain the carbon-doped silicon dioxide layer.
In another aspect of the foregoing embodiments, there is provided a method for fabricating an N-type TOPCon solar cell, wherein the carbon doping concentration in the carbon-doped silicon dioxide layer is 1 × 10 19 atoms/cm 3 ～1×10 20 atoms/cm 3 (ii) a The thickness of the carbon-doped silicon dioxide layer is 1 nm-2 nm.
In one example of the method for fabricating the N-type TOPCon solar cell provided by another aspect of the above embodiments, the doping concentration of phosphorus in the phosphorus-doped polysilicon layer is 1 × 10 20 atoms/cm 3 ～1×10 21 atoms/cm 3 (ii) a And/or the sheet resistance of the phosphorus-doped polycrystalline silicon layer is 30Ω/sq～40Ω/sq。
In an example of the method for manufacturing an N-type TOPCon solar cell provided by another aspect of the above embodiment, the method for performing boron diffusion treatment on the front surface of an N-type silicon wafer substrate includes: diffusing a boron doping source into the N-type silicon wafer substrate through a high-temperature boron diffusion process to form the emitter layer in the N-type silicon wafer substrate; wherein the doping concentration of boron in the emitter layer is 3 × 10 20 atoms/cm 3 ～1×10 21 atoms/cm 3 (ii) a And/or the sheet resistance of the emitter layer is 110-120 omega/sq.
In an example of the fabrication method of the N-type TOPCon solar cell provided in another aspect of the above-described embodiments, before performing the boron diffusion process on the front surface of the N-type silicon wafer substrate, the fabrication method further includes: carrying out double-sided texturing on the N-type silicon wafer substrate by adopting groove-type texturing equipment; wherein the resistivity of the N-type silicon wafer substrate is 0.3-2.1 omega cm.
In another example of the method for manufacturing an N-type TOPCon solar cell according to the above embodiment, the distance between the predetermined position and the edge of the N-type silicon wafer substrate is 0.5mm to 1mm, the laser power of the laser device is 15W to 16W, the laser speed of the laser device is 24m/s, and the laser frequency of the laser device is 400 kHz.
In one example of the method for fabricating an N-type TOPCon solar cell provided in another aspect of the above-described embodiments, the method for forming the front electrode and the back electrode includes: screen printing front electrode paste on the passivation film through a screen printer, and screen printing back electrode paste on the second silicon nitride layer; and drying the electrode slurry, enabling the front electrode slurry to burn through the passivation film through high-temperature sintering to form ohmic contact with the emitter layer, and enabling the back electrode slurry to burn through the second silicon nitride layer to form ohmic contact with the phosphorus-doped polycrystalline silicon layer so as to form the front electrode and the back electrode respectively.
Has the advantages that: according to the N-type TOPCon solar cell, the carbon-doped silicon dioxide layer is added between the tunneling oxide layer and the phosphorus-doped polycrystalline silicon layer on the back of the N-type TOPCon solar cell, and phosphorus ions can be prevented from diffusing into the tunneling oxide layer in the phosphorus diffusion and doping process by the carbon-doped silicon dioxide layer, so that the problem of reduction of tunneling effect caused by the carbon-doped silicon dioxide layer is solved. And after the tunneling passivation contact structure on the back surface of the battery is prepared, the edge of the battery is cut by using laser equipment, so that edge insulation is realized, and the problem of electric leakage at the edge of the battery is favorably solved. Therefore, the N-type TOPCon solar cell can greatly improve the open-circuit voltage of the cell and reduce the edge leakage current, thereby further improving the conversion efficiency of the cell.
Drawings
The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
fig. 1 is a schematic structural diagram of an N-type topocon solar cell according to an embodiment of the present invention;
fig. 2 is a flow chart of a method for fabricating a N-type topocon solar cell according to an embodiment of the present invention.
Detailed Description
Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application to thereby enable others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated.
As used herein, the term "include" and its variants mean open-ended terms in the sense of "including, but not limited to. The terms "based on," based on, "and the like mean" based at least in part on, "" based at least in part on. The terms "one embodiment" and "an embodiment" mean "at least one embodiment". The term "another embodiment" means "at least one other embodiment". The terms "first," "second," and the like may refer to different or the same object. Other definitions, whether explicit or implicit, may be included below. The definition of a term is consistent throughout the specification unless the context clearly dictates otherwise.
As described in the background art, the existing N-type TOPCon solar cell forms a phosphorus-doped polysilicon layer by performing phosphorus diffusion treatment on an intrinsic polysilicon layer to form a tunneling passivation contact structure with a tunneling oxide layer, but the phosphorus-doped method through phosphorus diffusion has the problems that the depth of a phosphorus-doped junction is difficult to control, a phosphorus-doped source is easy to diffuse into the tunneling oxide layer, and the tunneling effect is reduced; in addition, the TOPCon battery prepared by the phosphorus doping method has the problem of battery edge leakage, and the improvement of the efficiency of the TOPCon battery is further hindered. Therefore, in order to further improve the photoelectric conversion efficiency of the TOPCon cell, an N-type TOPCon solar cell and a manufacturing method thereof are provided according to an embodiment of the invention.
In the N-type TOPCon solar cell and the manufacturing method thereof provided by the embodiment of the invention, a carbon-doped silicon dioxide layer is added between the tunneling oxide layer and the phosphorus-doped polysilicon layer on the back surface of the N-type TOPCon solar cell, so that phosphorus ions are prevented from diffusing into the tunneling oxide layer, and the problem of reduced tunneling effect caused by diffusion of a phosphorus-doped source into the tunneling oxide layer is solved. And after the tunneling passivation contact structure on the back surface of the battery is prepared, the edge of the battery is cut by using laser equipment, so that edge insulation is realized, and the problem of electric leakage at the edge of the battery is favorably solved. Therefore, the N-type TOPCon solar cell can greatly improve the open-circuit voltage of the cell and reduce the edge leakage current, thereby further improving the conversion efficiency of the cell.
Fig. 1 is a schematic structural diagram of an N-type topocon solar cell according to an embodiment of the present invention.
Referring to fig. 1, an N-type TOPCon solar cell according to an embodiment of the present invention includes: an N-type silicon wafer substrate 10, an emitter layer 20, a passivation film 30, a tunnel oxide layer 40, a carbon-doped silicon dioxide layer 50, a phosphorus-doped polysilicon layer 60, a second silicon nitride layer 70, a front electrode 80, and a back electrode 90.
Specifically, the emitter layer 20 is formed in the N-type silicon wafer substrate 10 and is located on the front surface side of the N-type silicon wafer substrate 10.
The passivation film 30 is laminated on the emitter layer 20. Wherein the passivation film 30 includes an aluminum oxide layer and a first silicon nitride layer, which are sequentially stacked.
The tunneling oxide layer 40, the carbon-doped silicon dioxide layer 50, and the phosphorus-doped polysilicon layer 60 are sequentially stacked on the back surface of the N-type silicon wafer substrate 10.
The second silicon nitride layer 70 is stacked on the phosphorus-doped polysilicon layer 60.
The front electrode 80 penetrates the passivation film 30 to be in contact with the emitter layer 20; the back electrode 90 penetrates the second silicon nitride layer 70 to be in contact with the phosphorus-doped polycrystalline silicon layer 60.
The front and back surfaces of the N-type silicon wafer substrate 10 are a pair of surfaces of the N-type silicon wafer substrate 10 facing each other. The front surface of the N-type silicon wafer substrate 10 is a light receiving surface, and the back surface of the N-type silicon wafer substrate 10 is a backlight surface.
Fig. 2 is a flow chart of a method for fabricating a N-type topocon solar cell according to an embodiment of the present invention. Referring to fig. 1 and 2 together, the method for fabricating an N-type TOPCon solar cell according to an embodiment of the present invention includes steps S110, S120, S130, S140, and S150.
Specifically, in step S110, the front surface of the N-type silicon wafer substrate 10 is subjected to boron diffusion treatment to form the emitter layer 20. That is, the emitter junction 20 belongs to a part (front surface area part) of the N-type silicon wafer substrate 10. In other words, boron is diffused into the N-type silicon wafer substrate 10 from the front surface of the N-type silicon wafer substrate 10 (to a predetermined position from the front surface) by performing a boron diffusion process on the front surface of the N-type silicon wafer substrate 10, so that a boron-diffused region in the N-type silicon wafer substrate 10 is formed as the emitter layer 20.
Specifically, the method for implementing step S110 further includes:
a boron doping source is diffused into the N-type silicon wafer substrate 10 through a high temperature boron diffusion process to form the emitter layer 20 in the N-type silicon wafer substrate 10.
In one example, after the boron diffusion process is performed, the doping concentration of boron in the emitter layer 20 is 3 × 10 20 atoms/cm 3 ～1×10 21 atoms/cm 3 (ii) a The sheet resistance of the emitter layer 20 is 110 Ω/sq to 120 Ω/sq.
In one example, before the first boron diffusion treatment is performed on the front surface of the N-type silicon wafer substrate 10, the manufacturing method further comprises: and performing double-sided texturing treatment on the N-type silicon wafer substrate by using groove-type texturing equipment to form a pyramid textured surface or an inverted pyramid textured surface on the surface (namely the front surface and the back surface) of the N-type silicon wafer substrate 10, so that the reflectivity of incident light can be reduced, and the photon utilization rate can be improved.
Wherein the resistivity of the N-type silicon wafer substrate is 0.3-2.1 omega cm.
In one example, after the front surface of the N-type silicon wafer substrate 10 is subjected to a boron diffusion process to form the emitter layer 20, and before the step S120, the fabrication method further includes:
firstly, the N-type silicon wafer substrate 10 is cleaned by using an HF solution to remove a borosilicate glass layer formed on the back surface of the N-type silicon wafer substrate 10 during the boron diffusion treatment.
Then, the back surface of the N-type silicon wafer substrate 10 was subjected to alkali polishing treatment using a KOH solution of 40% by volume.
In step S120, a tunnel oxide layer 40, a carbon-doped silicon dioxide layer 50, and a phosphorus-doped polysilicon layer 60 are sequentially formed on the back surface of the N-type silicon wafer substrate 10. Wherein the front and back surfaces of the N-type silicon wafer substrate 10 are a pair of surfaces of the N-type silicon wafer substrate 10 facing each other.
Specifically, the method for implementing step S120 further includes:
in a first step, the tunnel oxide layer 40 is formed on the back surface of the N-type silicon wafer substrate 10 by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method.
In one example, the tunneling oxide layer 40 is a silicon dioxide layer, and the thickness of the tunneling oxide layer 40 is 1nm to 2 nm.
Secondly, forming a carbon-doped silicon dioxide layer 50 on the tunneling oxide layer 40 by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, which specifically includes:
carbon dioxide gas is introduced into the plasma enhanced chemical vapor deposition equipment to perform carbon doping in the process of forming the silicon dioxide layer by using the plasma enhanced chemical vapor deposition method, so as to obtain the carbon-doped silicon dioxide layer 50.
In the present embodiment, the doping concentration of carbon in the carbon-doped silicon dioxide layer 50 is 1 × 10 19 atoms/cm 3 ～1×10 20 atoms/cm 3 . The thickness of the carbon-doped silicon dioxide layer 50 is 1nm to 2 nm.
The power of a radio frequency power supply of the plasma enhanced chemical vapor deposition equipment is 30 w-35 w, the flow rate of the carbon dioxide gas is 200 sccm-300 sccm, and the deposition time is 50 s-60 s.
Third, an intrinsic polysilicon layer is formed on the carbon-doped silicon dioxide layer 50 using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method. Wherein the thickness of the intrinsic polycrystalline silicon layer is 70 nm-150 nm.
The fourth step, the intrinsic polysilicon layer is phosphorus-doped using a phosphorus diffusion device to form the phosphorus-doped polysilicon layer 60.
In one example, the phosphorus-doped polysilicon layer 60 has a phosphorus doping concentration of 1 × 10 20 atoms/cm 3 ～1×10 21 atoms/cm 3 . The sheet resistance of the phosphorus-doped polysilicon layer 60 is 30 Ω/sq to 40 Ω/sq.
By forming the carbon-doped silicon dioxide layer 50 between the tunnel oxide layer 40 and the phosphorus-doped polysilicon layer 60, phosphorus ions are prevented from entering the tunnel oxide layer during the phosphorus diffusion doping process, thereby solving the problem of reduced tunneling effect caused by the phosphorus-doped silicon dioxide layer.
In one example, after the stacked tunnel oxide layer 40, carbon-doped silicon dioxide layer 50 and phosphorus-doped polysilicon layer 60 are sequentially formed on the back surface of the N-type silicon wafer substrate 10, and before the step S130, the manufacturing method further includes:
removing a phosphosilicate glass (PSG) layer on the front surface of the N-type silicon wafer substrate 10 by using HF chain type cleaning equipment; and cleaning the back and front of the N-type silicon wafer substrate 10 by using a trough type alkaline cleaning device and an acid cleaning device to remove the tunnel oxide layer 40, the carbon-doped silicon dioxide layer 50, the phosphorus-doped polysilicon layer 60, the borosilicate glass layer (BSG) and the phosphosilicate glass layer (PSG) on the back of the substrate 10, which are formed on the front of the substrate 10 in step S120.
In step S130, an edge dicing is performed at a predetermined position from the edge of the N-type silicon wafer substrate 10 using a laser apparatus.
In this embodiment, the distance between the predetermined position and the edge of the N-type silicon wafer substrate is 0.5mm to 1mm, the laser power of the laser device is 15W to 16W, the laser speed of the laser device is 24m/s, and the laser frequency of the laser device is 400 kHz.
The battery edge is cut by using laser equipment, so that edge insulation is realized, and the problem of electric leakage at the edge of the battery is favorably solved.
After the laser device is used to perform edge cutting on a predetermined position away from the edge of the N-type silicon wafer substrate 10, a groove-type alkaline cleaning method needs to be used to repair a damaged layer caused by the laser device.
In step S140, a passivation film 30 is formed on the emitter layer 20, and a second silicon nitride layer 70 is formed on the phosphorus-doped polycrystalline silicon layer 60.
In one example, the passivation film 30 includes an aluminum oxide layer and a first silicon nitride layer, which are sequentially stacked.
The thickness of the aluminum oxide layer is 10 nm-15 nm. The method for forming the aluminum oxide layer includes an Atomic Layer Deposition (ALD) method.
In one example, the first and second silicon nitride layers 70 are silicon nitride layers. The first silicon nitride layer and the second silicon nitride layer 70 are formed by a method including Plasma Enhanced Chemical Vapor Deposition (PECVD). Wherein the first silicon nitride layer and the second silicon nitride layer 70 have a thickness of 80 nm.
In step S150, a front electrode 80 penetrating the passivation film 30 to contact the emitter layer 20 is formed on the passivation film 30, and a back electrode 90 penetrating the second silicon nitride layer 70 to contact the phosphorus-doped polycrystalline silicon layer 60 is formed on the second silicon nitride layer 70 to obtain the N-type TOPCon solar cell.
Specifically, the method for implementing step S150 includes:
first, a front electrode paste is screen-printed on the passivation film 30 and a rear electrode paste is screen-printed on the second silicon nitride layer 70 by a screen printer.
Next, the electrode paste is dried, and the front electrode paste is fired through the passivation film 30 by high temperature sintering to form ohmic contact with the emitter layer 20, and the back electrode paste is fired through the second silicon nitride layer 70 to form ohmic contact with the phosphorus-doped polysilicon layer 60, so as to form the front electrode 80 and the back electrode 90, respectively.
In one example, the front electrode paste is a silver aluminum paste; the back electrode slurry is silver paste.
In one example, the peak temperature of the high temperature sintering is 815 ℃.
In this embodiment, after the N-type TOPCon solar cell is prepared, the optical and electrical properties of the cell are also tested.
In summary, according to the N-type TOPCon solar cell and the method for manufacturing the same in the embodiments of the present invention, the carbon-doped silicon dioxide layer is added between the tunnel oxide layer and the phosphorus-doped polysilicon layer on the back surface of the N-type TOPCon solar cell, and the carbon-doped silicon dioxide layer can prevent phosphorus ions from diffusing into the tunnel oxide layer in the phosphorus diffusion doping process, so that the problem of the decrease in the tunnel effect caused by the carbon-doped silicon dioxide layer is solved. And after the tunneling passivation contact structure on the back surface of the battery is prepared, the edge of the battery is cut by using laser equipment, so that edge insulation is realized, and the problem of electric leakage at the edge of the battery is favorably solved. Therefore, the N-type TOPCon solar cell can greatly improve the open-circuit voltage of the cell and reduce the edge leakage current, thereby further improving the conversion efficiency of the cell.
The foregoing description has described certain embodiments of this invention. Other embodiments are within the scope of the following claims.
The terms "exemplary," "example," and the like, as used throughout this specification, mean "serving as an example, instance, or illustration," and do not mean "preferred" or "advantageous" over other embodiments. The detailed description includes specific details for the purpose of providing an understanding of the described technology. However, the techniques may be practiced without these specific details. In some instances, well-known structures and devices are shown in block diagram form in order to avoid obscuring the concepts of the described embodiments.
Alternative embodiments of the present invention are described in detail with reference to the drawings, however, the embodiments of the present invention are not limited to the specific details in the above embodiments, and within the technical idea of the embodiments of the present invention, many simple modifications may be made to the technical solution of the embodiments of the present invention, and these simple modifications all belong to the protection scope of the embodiments of the present invention.
The previous description of the specification is provided to enable any person skilled in the art to make or use the specification. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the scope of the disclosure. Thus, the description is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An N-type topocon solar cell, comprising:
an N-type silicon wafer substrate;
the emitter layer is formed in the N-type silicon wafer substrate and is positioned on one side of the front surface of the N-type silicon wafer substrate;
a passivation film laminated on the emitter layer; wherein the passivation film includes an aluminum oxide layer and a first silicon nitride layer which are sequentially stacked;
the tunneling oxide layer, the carbon-doped silicon dioxide layer and the phosphorus-doped polycrystalline silicon layer are sequentially stacked on the back surface of the N-type silicon wafer substrate, and the front surface and the back surface of the substrate are opposite to each other;
a second silicon nitride layer stacked on the phosphorus-doped polycrystalline silicon layer;
a front electrode and a back electrode, the front electrode penetrating the passivation film to be in contact with the emitter layer; the back electrode penetrates through the second silicon nitride layer to be in contact with the phosphorus-doped polycrystalline silicon layer.
2. A manufacturing method of an N-type TOPCon solar cell is characterized by comprising the following steps:
performing boron diffusion treatment on the front surface of the N-type silicon wafer substrate to form an emitter layer;
sequentially forming a tunneling oxide layer, a carbon-doped silicon dioxide layer and a phosphorus-doped polysilicon layer which are stacked on the back surface of the N-type silicon wafer substrate;
cutting the edge of the preset position away from the edge of the N-type silicon wafer substrate by using laser equipment;
forming a passivation film on the emitter layer, and forming a second silicon nitride layer on the phosphorus-doped polycrystalline silicon layer;
forming a front electrode penetrating through the passivation film to be in contact with the emitter layer on the passivation film, and forming a back electrode penetrating through the second silicon nitride layer to be in contact with the phosphorus-doped polycrystalline silicon layer on the second silicon nitride layer to obtain the N-type TOPCon solar cell.
3. The method of manufacturing according to claim 2, wherein the step of sequentially forming a tunnel oxide layer, a carbon-doped silicon dioxide layer and a phosphorus-doped polysilicon layer stacked on the back surface of the N-type silicon wafer substrate comprises:
forming a tunneling oxide layer on the back of the N-type silicon wafer substrate;
forming a carbon-doped silicon dioxide layer on the tunneling oxide layer;
forming an intrinsic polysilicon layer on the carbon-doped silicon dioxide layer;
and carrying out phosphorus doping on the intrinsic polycrystalline silicon layer by adopting phosphorus diffusion equipment to form the phosphorus-doped polycrystalline silicon layer.
4. The method of claim 3, wherein the step of forming the carbon-doped silicon dioxide layer on the tunnel oxide layer comprises:
and introducing carbon dioxide gas into the plasma enhanced chemical vapor deposition equipment to perform carbon doping in the process of forming the silicon dioxide layer by using the plasma enhanced chemical vapor deposition method, so as to obtain the carbon-doped silicon dioxide layer.
5. The method of claim 4, wherein the carbon-doped silicon dioxide layer is doped with carbon at a concentration of 1 x 10 19 atoms/cm 3 ～1×10 20 atoms/cm 3 (ii) a The thickness of the carbon-doped silicon dioxide layer is 1 nm-2 nm.
6. The method according to any one of claims 2 to 4, wherein the phosphorus-doped polysilicon layer has a phosphorus doping concentration of 1 x 10 20 atoms/cm 3 ～1×10 21 atoms/cm 3 (ii) a And/or the sheet resistance of the phosphorus-doped polycrystalline silicon layer is 30-40 omega/sq.
7. The manufacturing method according to claim 2, wherein the method of performing boron diffusion treatment on the front surface of the N-type silicon wafer substrate comprises:
diffusing a boron doping source into the N-type silicon wafer substrate through a high-temperature boron diffusion process to form the emitter layer in the N-type silicon wafer substrate;
wherein a doping concentration of boron in the emitter layer is 3 × 10 20 atoms/cm 3 ～1×10 21 atoms/cm 3 (ii) a And/or the sheet resistance of the emitter layer is 110-120 omega/sq.
8. The fabrication method according to claim 7, wherein before the boron diffusion treatment is performed on the front surface of the N-type silicon wafer substrate, the fabrication method further comprises: carrying out double-sided texturing on the N-type silicon wafer substrate by adopting groove-type texturing equipment;
wherein the resistivity of the N-type silicon wafer substrate is 0.3-2.1 omega cm.
9. The manufacturing method according to claim 2, wherein the distance between the predetermined position and the edge of the N-type silicon wafer substrate is 0.5mm to 1mm, the laser power of the laser device is 15W to 16W, the laser speed of the laser device is 24m/s, and the laser frequency of the laser device is 400 kHz.
10. The method of manufacturing according to claim 2, wherein the method of forming the front electrode and the back electrode comprises:
screen printing front electrode paste on the passivation film through a screen printer, and screen printing back electrode paste on the second silicon nitride layer;
and drying the electrode slurry, enabling the front electrode slurry to burn through the passivation film through high-temperature sintering to form ohmic contact with the emitter layer, and enabling the back electrode slurry to burn through the second silicon nitride layer to form ohmic contact with the phosphorus-doped polycrystalline silicon layer so as to form the front electrode and the back electrode respectively.
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Cited By (3)
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| CN115692533A (en) * | 2022-11-15 | 2023-02-03 | 江苏杰太光电技术有限公司 | TOPCon battery and preparation method thereof |
| CN116169208A (en) * | 2023-04-26 | 2023-05-26 | 华能新能源股份有限公司 | TOPCON solar cell slice and preparation method thereof |
| CN117199190A (en) * | 2023-09-27 | 2023-12-08 | 淮安捷泰新能源科技有限公司 | Manufacturing method of N-TOPCON battery |
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| CN113851555A (en) * | 2021-08-20 | 2021-12-28 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | N-type TOPCon solar cell and manufacturing method thereof |
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