CN203260605U - Back-passivated solar cell with laminated film - Google Patents
Back-passivated solar cell with laminated film Download PDFInfo
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- CN203260605U CN203260605U CN 201320263891 CN201320263891U CN203260605U CN 203260605 U CN203260605 U CN 203260605U CN 201320263891 CN201320263891 CN 201320263891 CN 201320263891 U CN201320263891 U CN 201320263891U CN 203260605 U CN203260605 U CN 203260605U
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Abstract
The utility model discloses a back-passivated solar cell with a laminated film. The back-passivated solar cell comprises a P-type crystalline silicon substrate, a front passivated layer, a front electrode layer, a hydrogenated amorphous silicon layer, a back electrode layer, a back electric field layer and a metallic oxide layer with a negative fixed charge; the P-type crystalline silicon substrate comprises a front face and a back face; a front passivated layer is deposited on the front face of the P-type crystalline silicon substrate; the front electrode layer is arranged on the upper surface of the front passivated layer; the hydrogenated amorphous silicon layer is deposited on the back face of the P-type crystalline silicon substrate; the metallic oxide layer is deposited on the lower surface of the hydrogenated amorphous silicon layer; the back electrode layer is arranged on the lower surface of the metallic oxide layer; and the back electric field layer is arranged on the lower surface of the back electrode layer. According to the utility model, a passivation effect of the back of a P-type crystalline silicon is enhanced, the density of defect states of the back is decreased, the conversion efficiency of the solar cell is improved and the solar cell is easy to manufacture at low temperature.
Description
Technical field
The utility model relates to a kind of solar cell of laminate film passivating back, belongs to technical field of solar batteries.
Background technology
At present, prior art is relatively better to the positive passivation of crystal silicon cell, passivating back is relatively poor, directly affects battery efficiency, mainly is to adopt silicon dioxide or aluminium oxide for the passivation of P type crystal silicon solar energy battery, if only use the silica passivation, because silica is to adopt thermal oxidation to make, and is to make under hot conditions easily to the silicon chip injury, if only use aluminium oxide passivation, aluminium oxide is owing to also have less hydrogen and anion, and passivation effect is not ideal.
Summary of the invention
Technical problem to be solved in the utility model is the defective that overcomes prior art, a kind of solar cell of laminate film passivating back is provided, it can improve the passivation effect at the P type crystalline silicon back side, reduce the defect on back side density of states, improve its battery conversion efficiency, and easily at low temperatures preparation.
In order to solve the problems of the technologies described above, the technical solution of the utility model is: a kind of solar cell of laminate film passivating back, it comprises P type crystalline silicon substrate, the front passivation layer, the front electrode layer, hydrogenated amorphous silicon layer, the backplate layer, back surface field layer and the metal oxide layer with negative fixed charge, P type crystalline silicon substrate has a positive and back side, positive passivation layer deposition is on the front of P type crystalline silicon substrate, the front electrode layer is positioned on the upper surface of front passivation layer, amorphous silicon hydride is deposited upon on the back side of P type crystalline silicon substrate, metal oxide is deposited upon on the lower surface of hydrogenated amorphous silicon layer, the backplate layer is positioned on the lower surface of metal oxide layer, and the back surface field layer is positioned on the lower surface of backplate layer.
Further, described front passivation layer is silicon nitride film.
Further, described front electrode layer is silver-colored grid.
Further, described metal oxide layer with negative fixed charge is the alundum (Al2O3) film.
Further, the thickness range of described hydrogenated amorphous silicon layer is 5 nanometers ~ 30 nanometers.
Further, described thickness range with metal oxide layer of negative fixed charge is 5 nanometers ~ 50 nanometers.
The preparation method's of the solar cell of this laminate film passivating back step is as follows: a) with P type crystal silicon chip successively cleaning and texturing, diffuse into PN junction, peripheral etching and remove phosphorosilicate glass after, obtain P type crystalline silicon substrate; B) at deposition one deck front, the front of P type crystalline silicon substrate passivation layer; C) successively deposition of hydrogenated amorphous silicon layer and metal oxide layer at the back side of P type crystalline silicon substrate make intermediate product, and wherein, metal oxide layer has negative fixed charge; D) be that the intermediate product that step c) is made carried out annealing in process 10 ~ 35 minutes under the gaseous environment of 300 ~ 400 ℃ hydrogen and nitrogen in temperature; E) carry out overleaf laser ablation or the perforate of corrosion slip, then silk screen printing front electrode layer and printed back electrode layer and back surface field layer then by co-sintering, make finished product again.In the gaseous environment of described hydrogen and nitrogen, the percent by volume of each component is nitrogen: 95%～99.5%; Hydrogen: 0.5%～5%.
Described depositional mode using plasma strengthens chemical vapour deposition technique.
After having adopted technique scheme, the utlity model has following beneficial effect:
1, hydrogenated amorphous silicon layer ginseng boron, the deposition of hydrogenated amorphous silicon layer can be made at low temperatures, has reduced the energy consumption of battery preparation process, and prepares under low temperature environment, has reduced the possibility of Impurity Diffusion in the P type crystalline silicon substrate.
2, hydrogenated amorphous silicon layer ginseng boron, hydrogenated amorphous silicon layer passivation crystal silicon solar energy battery can obtain lower surface and echo speed, strengthens the fine optical property of battery, forms good ohmic contact.
3, hydrogenated amorphous silicon layer ginseng boron, hydrogenated amorphous silicon layer can reduce in the depositing metal-oxide coating process the damage on P type crystalline silicon substrate surface, are conducive to improve battery conversion efficiency.
4, hydrogenated amorphous silicon layer ginseng boron, hydrogenated amorphous silicon layer can connect P type crystalline silicon substrate band gap variation, can make band gap and work function up, improves the back surface field effect, reduces contact resistance, improves battery conversion efficiency.
5, a small amount of hydrogen in the alundum (Al2O3) film can be spread to the surface of P type crystalline silicon substrate, reduces the dangling bonds at interface, improves the chemical passivation effect.
6, contain a large amount of negative electrical charges in the alundum (Al2O3) film, negative electrical charge can produce powerful field effect passivation, is conducive to improve battery conversion efficiency.
7, the process of annealing has increased the fixed charge density of alundum (Al2O3), thereby has strengthened the field effect passivation.
8, can and have between the metal oxide layer (alundum (Al2O3) film) of negative fixed charge at hydrogenated amorphous silicon layer in the annealing process and generate SiO
XThin layer, thus make the defect state density that reduces surface of crystalline silicon, improve battery conversion efficiency.
Description of drawings
Fig. 1 is the structural representation of the solar cell of laminate film passivating back of the present utility model;
Fig. 2 is preparation method's the process chart of the solar cell of laminate film passivating back of the present utility model.
Embodiment
Content of the present utility model is easier to be expressly understood in order to make, and the below is described in further detail the utility model according to specific embodiment also by reference to the accompanying drawings,
Embodiment one
As shown in Figure 1, a kind of solar cell of laminate film passivating back, it comprises P type crystalline silicon substrate 1, front passivation layer 2, front electrode layer 3, hydrogenated amorphous silicon layer 4, backplate layer 6, back surface field layer 7 and the metal oxide layer 5 with negative fixed charge, P type crystalline silicon substrate 1 has a positive and back side, front passivation layer 2 is deposited on the front of P type crystalline silicon substrate 1, front electrode layer 3 is positioned on the upper surface of front passivation layer 2, hydrogenated amorphous silicon layer 4 is deposited on the back side of P type crystalline silicon substrate 1, metal oxide layer 5 is deposited on the lower surface of hydrogenated amorphous silicon layer 4, backplate layer 6 is positioned on the lower surface of metal oxide layer 5, and back surface field layer 7 is positioned on the lower surface of backplate layer 6.Front passivation layer 2 is silicon nitride film.Front electrode layer 3 is silver-colored grid.Metal oxide layer 5 with negative fixed charge is the alundum (Al2O3) film.The thickness range of hydrogenated amorphous silicon layer 4 is 5 nanometers.Thickness range with metal oxide layer 5 of negative fixed charge is 5 nanometers.
As shown in Figure 2, the preparation method's of the solar cell of this laminate film passivating back step is as follows: a) with P type crystal silicon chip successively cleaning and texturing, diffuse into PN junction, peripheral etching and remove phosphorosilicate glass after, obtain P type crystalline silicon substrate 1; B) at deposition one deck front, the front of P type crystalline silicon substrate 1 passivation layer 2, be silicon nitride film in the present embodiment; C) successively deposition of hydrogenated amorphous silicon layer 4 and metal oxide layer 5 at the back side of P type crystalline silicon substrate 1 make intermediate product, and wherein, metal oxide layer 5 has negative fixed charge, is the alundum (Al2O3) film in the present embodiment.D) be that the intermediate product that step c) is made carried out annealing in process 10 minutes under the gaseous environment of 300 ℃ hydrogen and nitrogen in temperature; E) carry out overleaf laser ablation or the perforate of corrosion slip, then silk screen printing front electrode layer 3 and printed back electrode layer 6 and back surface field layer 7 then by co-sintering, make finished product again, and the front electrode layer 3 in the present embodiment is for being silver-colored grid.
In the gaseous environment of hydrogen and nitrogen, the percent by volume of each component is nitrogen: 95%; Hydrogen: 5%.The depositional mode using plasma strengthens chemical vapour deposition technique.
Find that through detecting the solar cell inactivating effect of the laminate film passivating back that this preparation method makes is relatively quite a lot of, battery conversion efficiency can reach about 20%.
Embodiment two
As shown in Figure 1, a kind of solar cell of laminate film passivating back, it comprises P type crystalline silicon substrate 1, front passivation layer 2, front electrode layer 3, hydrogenated amorphous silicon layer 4, backplate layer 6, back surface field layer 7 and the metal oxide layer 5 with negative fixed charge, P type crystalline silicon substrate 1 has a positive and back side, front passivation layer 2 is deposited on the front of P type crystalline silicon substrate 1, front electrode layer 3 is positioned on the upper surface of front passivation layer 2, hydrogenated amorphous silicon layer 4 is deposited on the back side of P type crystalline silicon substrate 1, metal oxide layer 5 is deposited on the lower surface of hydrogenated amorphous silicon layer 4, backplate layer 6 is positioned on the lower surface of metal oxide layer 5, and back surface field layer 7 is positioned on the lower surface of backplate layer 6.Front passivation layer 2 is silicon nitride film.Front electrode layer 3 is silver-colored grid.Metal oxide layer 5 with negative fixed charge is the alundum (Al2O3) film.The thickness range of hydrogenated amorphous silicon layer 4 is 30 nanometers.Thickness range with metal oxide layer 5 of negative fixed charge is 50 nanometers.
As shown in Figure 2, the preparation method's of the solar cell of this laminate film passivating back step is as follows: a) with P type crystal silicon chip successively cleaning and texturing, diffuse into PN junction, peripheral etching and remove phosphorosilicate glass after, obtain P type crystalline silicon substrate 1; B) at deposition one deck front, the front of P type crystalline silicon substrate 1 passivation layer 2, be silicon nitride film in the present embodiment; C) successively deposition of hydrogenated amorphous silicon layer 4 and metal oxide layer 5 at the back side of P type crystalline silicon substrate 1 make intermediate product, and wherein, metal oxide layer 5 has negative fixed charge, is the alundum (Al2O3) film in the present embodiment.D) be that the intermediate product that step c) is made carried out annealing in process 35 minutes under the gaseous environment of 400 ℃ hydrogen and nitrogen in temperature; E) carry out overleaf laser ablation or the perforate of corrosion slip, then silk screen printing front electrode layer 3 and printed back electrode layer 6 and back surface field layer 7 then by co-sintering, make finished product again, and the front electrode layer 3 in the present embodiment is for being silver-colored grid.
In the gaseous environment of hydrogen and nitrogen, the percent by volume of each component is nitrogen: 99.5%; Hydrogen: 0.5%.The depositional mode using plasma strengthens chemical vapour deposition technique.
Find that through detecting the solar cell inactivating effect of the laminate film passivating back that this preparation method makes is relatively quite a lot of, battery conversion efficiency can reach about 20%.
Embodiment three
As shown in Figure 1, a kind of solar cell of laminate film passivating back, it comprises P type crystalline silicon substrate 1, front passivation layer 2, front electrode layer 3, hydrogenated amorphous silicon layer 4, backplate layer 6, back surface field layer 7 and the metal oxide layer 5 with negative fixed charge, P type crystalline silicon substrate 1 has a positive and back side, front passivation layer 2 is deposited on the front of P type crystalline silicon substrate 1, front electrode layer 3 is positioned on the upper surface of front passivation layer 2, hydrogenated amorphous silicon layer 4 is deposited on the back side of P type crystalline silicon substrate 1, metal oxide layer 5 is deposited on the lower surface of hydrogenated amorphous silicon layer 4, backplate layer 6 is positioned on the lower surface of metal oxide layer 5, and back surface field layer 7 is positioned on the lower surface of backplate layer 6.Front passivation layer 2 is silicon nitride film.Front electrode layer 3 is silver-colored grid.Metal oxide layer 5 with negative fixed charge is the alundum (Al2O3) film.The thickness range of hydrogenated amorphous silicon layer 4 is 20 nanometers.Thickness range with metal oxide layer 5 of negative fixed charge is 30 nanometers.
As shown in Figure 2, the preparation method's of the solar cell of this laminate film passivating back step is as follows: a) with P type crystal silicon chip successively cleaning and texturing, diffuse into PN junction, peripheral etching and remove phosphorosilicate glass after, obtain P type crystalline silicon substrate 1; B) at deposition one deck front, the front of P type crystalline silicon substrate 1 passivation layer 2, be silicon nitride film in the present embodiment; C) successively deposition of hydrogenated amorphous silicon layer 4 and metal oxide layer 5 at the back side of P type crystalline silicon substrate 1 make intermediate product, and wherein, metal oxide layer 5 has negative fixed charge, is the alundum (Al2O3) film in the present embodiment.D) be that the intermediate product that step c) is made carried out annealing in process 30 minutes under the gaseous environment of 350 ℃ hydrogen and nitrogen in temperature; E) carry out overleaf laser ablation or the perforate of corrosion slip, then silk screen printing front electrode layer 3 and printed back electrode layer 6 and back surface field layer 7 then by co-sintering, make finished product again, and the front electrode layer 3 in the present embodiment is for being silver-colored grid.
In the gaseous environment of hydrogen and nitrogen, the percent by volume of each component is nitrogen: 97%; Hydrogen: 3%.The depositional mode using plasma strengthens chemical vapour deposition technique.
Find that through detecting the solar cell inactivating effect of the laminate film passivating back that this preparation method makes is relatively quite a lot of, battery conversion efficiency can reach about 20%.
By the preparation of above three embodiment and the preparation under other operational environments, the solar cell that can obtain this laminate film passivating back has improved the passivation effect at the P type crystalline silicon back side, reduced the defect on back side density of states, improved its battery conversion efficiency, and easily at low temperatures preparation.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (6)
1. the solar cell of a laminate film passivating back is characterized in that, it comprises:
One P type crystalline silicon substrate (1), it has a positive and back side;
One front passivation layer (2) is deposited on the front of P type crystalline silicon substrate (1);
One front electrode layer (3) is positioned on the upper surface of front passivation layer (2);
One hydrogenated amorphous silicon layer (4) is deposited on the back side of P type crystalline silicon substrate (1);
One has the metal oxide layer (5) of negative fixed charge, is deposited on the lower surface of hydrogenated amorphous silicon layer (4);
One backplate layer (6) is positioned on the lower surface of metal oxide layer (5);
One back surface field layer (7) is positioned on the lower surface of backplate layer (6).
2. the solar cell of laminate film passivating back according to claim 1, it is characterized in that: described front passivation layer (2) is silicon nitride film.
3. the solar cell of laminate film passivating back according to claim 1, it is characterized in that: described front electrode layer (3) is silver-colored grid.
4. the solar cell of laminate film passivating back according to claim 1, it is characterized in that: described metal oxide layer (5) with negative fixed charge is the alundum (Al2O3) film.
5. the solar cell of laminate film passivating back according to claim 1, it is characterized in that: the thickness range of described hydrogenated amorphous silicon layer (4) is 5 nanometers ~ 30 nanometers.
6. the solar cell of laminate film passivating back according to claim 1, it is characterized in that: described thickness range with metal oxide layer (5) of negative fixed charge is 5 nanometers ~ 50 nanometers.
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| CN 201320263891 CN203260605U (en) | 2013-05-15 | 2013-05-15 | Back-passivated solar cell with laminated film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311340A (en) * | 2013-05-15 | 2013-09-18 | 常州天合光能有限公司 | Solar battery formed by laminating thin films and passivating back sides of thin films and preparation method thereof |
| CN106876523A (en) * | 2017-03-01 | 2017-06-20 | 南开大学 | A kind of passivating method of surface supersaturation doping photodetector |
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2013
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311340A (en) * | 2013-05-15 | 2013-09-18 | 常州天合光能有限公司 | Solar battery formed by laminating thin films and passivating back sides of thin films and preparation method thereof |
| CN103311340B (en) * | 2013-05-15 | 2016-08-24 | 常州天合光能有限公司 | Solar cell of laminate film passivating back and preparation method thereof |
| CN106876523A (en) * | 2017-03-01 | 2017-06-20 | 南开大学 | A kind of passivating method of surface supersaturation doping photodetector |
| CN106876523B (en) * | 2017-03-01 | 2018-05-11 | 南开大学 | A kind of passivating method of surface supersaturation doping photodetector |
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| C14 | Grant of patent or utility model | ||
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| CB03 | Change of inventor or designer information |
Inventor after: Zhang Yong Inventor before: Zhang Yong Inventor before: Yang Tongchun |
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Free format text: CORRECT: INVENTOR; FROM: ZHANG YONG YANG TONGCHUN TO: ZHANG YONG |
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| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131030 Termination date: 20190515 |
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| CF01 | Termination of patent right due to non-payment of annual fee |