CN114284381A - Heterojunction solar cell and manufacturing method thereof - Google Patents
Heterojunction solar cell and manufacturing method thereof Download PDFInfo
- Publication number
- CN114284381A CN114284381A CN202010989144.XA CN202010989144A CN114284381A CN 114284381 A CN114284381 A CN 114284381A CN 202010989144 A CN202010989144 A CN 202010989144A CN 114284381 A CN114284381 A CN 114284381A
- Authority
- CN
- China
- Prior art keywords
- grid
- amorphous layer
- solar cell
- heterojunction solar
- main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 210000004027 cell Anatomy 0.000 claims abstract description 66
- 210000005056 cell body Anatomy 0.000 claims abstract description 34
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 9
- 238000007639 printing Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a heterojunction solar cell and a manufacturing method thereof, wherein the heterojunction solar cell comprises a cell body and a collector electrode arranged on the surface of the cell body, the collector electrode comprises a main grid arranged on the surface of the cell body and an auxiliary grid vertically connected to the main grid, and the auxiliary grid is provided with a first auxiliary grid part which is partially lapped on the surface of one side, away from the cell body, of the main grid; based on the specific structure of the heterojunction solar cell provided by the invention, the reliable electrical connection between the main grid and the auxiliary grid can be formed by the lap joint mode between the first auxiliary grid part and the main grid, the risk that the main grid and the auxiliary grid are disconnected at the connecting position in the prior art can be effectively avoided, the effect of collecting the photo-generated current of the heterojunction solar cell is ensured, and the photoelectric conversion efficiency of the heterojunction solar cell can be optimized.
Description
Technical Field
The invention relates to the field of photovoltaic manufacturing, in particular to a heterojunction solar cell and a manufacturing method thereof.
Background
The heterojunction solar cell is a relatively high-efficiency crystalline silicon solar cell at present, combines the characteristics of a crystalline silicon cell and a silicon-based thin film cell, and has the advantages of short manufacturing process, low process temperature, high conversion efficiency, more generated energy and the like. The heterojunction solar cell has a small temperature degradation coefficient and double-sided power generation, so that the annual power generation amount can be 15-30% higher than that of a common polycrystalline silicon cell under the condition of the same area, and therefore the heterojunction solar cell has great market potential.
However, the method is limited by a low-temperature process, the heterojunction solar cell can only adopt low-temperature slurry when the collector is printed by adopting a screen printing plate, the printability of the low-temperature slurry is poor compared with that of high-temperature slurry, the metal grid lines forming the collector are prone to grid breaking risks during rapid printing, and particularly the probability of grid breaking at the connecting position of the main grid and the auxiliary grid is higher, so that collection of photo-generated current of the heterojunction solar cell is influenced, and improvement of efficiency of the heterojunction solar cell is not facilitated.
In view of the above, there is a need to provide an improved solution to the above problems.
Disclosure of Invention
The present invention is designed to solve at least one of the problems of the prior art, and to achieve the above object, the present invention provides a heterojunction solar cell, which is specifically designed as follows.
The utility model provides a heterojunction solar cell, includes the cell body, heterojunction solar cell still including set up in the collecting electrode on cell body surface, the collecting electrode including set up in the main bars and the perpendicular connection to on cell body surface the vice bars of main bars, vice bars have part overlap joint in the main bars deviates from a first vice bars portion of cell body side surface.
Furthermore, a fracture is formed at the position of the main grid by the first auxiliary grid part, and the overlapping length of the part of the first auxiliary grid part, which is positioned at each side of the main grid, on the surface of the corresponding main grid is 0.03-0.2 mm.
Further, the first auxiliary grid part is continuously formed at the position of the main grid.
Further, the auxiliary grid also has a second auxiliary grid part integrally formed with the main grid, and the first auxiliary grid part is stacked and arranged on one side surface of the corresponding first auxiliary grid part departing from the battery piece body.
Further, the width of the first sub-gate portion is not greater than the width of the second sub-gate portion.
Further, the sub-gate has an expansion region connected to the main gate, and a width of the expansion region is gradually increased in a direction close to the main gate.
Furthermore, the width of the expansion area at the edge position of the main grid is 2-5 times of the width of one end of the expansion area far away from the main grid.
Further, the solid content of the conductive paste forming the main grid is less than that of the conductive paste forming the first auxiliary grid part.
Further, the cell body comprises a monocrystalline silicon substrate, a first intrinsic amorphous layer and a first doped amorphous layer which are sequentially stacked on a light receiving surface of the monocrystalline silicon substrate, a second intrinsic amorphous layer and a second doped amorphous layer, wherein the second intrinsic amorphous layer and the first doped amorphous layer are sequentially arranged on a backlight surface of the monocrystalline silicon substrate; the sum of the thicknesses of the first intrinsic amorphous layer and the first doped amorphous layer is less than the sum of the thicknesses of the second intrinsic amorphous layer and the second doped amorphous layer.
Further, the sum of the thicknesses of the first intrinsic amorphous layer and the first doped amorphous layer is 6-21nm, and the sum of the thicknesses of the second intrinsic amorphous layer and the second doped amorphous layer is 7-30 nm.
Further, the thickness of the first intrinsic amorphous layer is less than or equal to the thickness of the second intrinsic amorphous layer, and the thickness of the first doped amorphous layer is less than or equal to the thickness of the second doped amorphous layer.
Further, the thickness of the first doped amorphous layer is 3-15nm, and the thickness of the second doped amorphous layer is 3-20 nm.
Furthermore, the cell body further comprises a first transparent conductive film arranged on the outer surface of the first doped amorphous layer and a second transparent conductive film arranged on the outer surface of the second doped amorphous layer, and the thickness of the first transparent conductive film layer is smaller than or equal to that of the second transparent conductive film layer.
The invention also provides a manufacturing method of the heterojunction solar cell, which is used for manufacturing the heterojunction solar cell and comprises the following steps:
providing a cell body;
forming the main grid on one surface of the battery piece body;
and forming a first auxiliary grid part which is lapped to the surface of one side, away from the battery piece body, of the main grid on one side, where the main grid is formed, of the battery piece body.
Further, before the first auxiliary grid part is formed, a second auxiliary grid part which is perpendicular to the main grid and is integrally connected with the main grid is formed, and the first auxiliary grid is formed on the surface of one side, away from the cell body, of the second auxiliary grid.
Further, the solid content of the conductive paste for forming the main gate is less than that of the conductive paste for forming the first sub-gate portion.
The invention has the beneficial effects that: based on the specific structure of the heterojunction solar cell provided by the invention, the reliable electrical connection between the main grid and the auxiliary grid can be formed by the lap joint mode between the first auxiliary grid part and the main grid, the risk that the main grid and the auxiliary grid are disconnected at the connecting position in the prior art can be effectively avoided, the effect of collecting the photo-generated current of the heterojunction solar cell is ensured, and the photoelectric conversion efficiency of the heterojunction solar cell can be optimized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts. The front and back sides referred to herein are only defined with respect to the positional relationship in the drawings of the embodiments, that is, the front side corresponds to the upper surface of the drawings, and the back side corresponds to the lower surface of the drawings.
FIG. 1 is a schematic cross-sectional view of a heterojunction solar cell of the present invention;
fig. 2 is a schematic plan view of a collector in a heterojunction solar cell of the invention;
FIG. 3 is an enlarged view of a portion a of the first embodiment of the collector shown in FIG. 2;
FIG. 4 is a perspective view of the structure shown in FIG. 3;
FIG. 5 is an enlarged view of a portion a of the second embodiment of the collector shown in FIG. 2;
FIG. 6 is a perspective view of the structure shown in FIG. 5;
FIG. 7 is an enlarged view of a portion a of the third embodiment of the collector shown in FIG. 2;
FIG. 8 is an enlarged view of a portion a of a fourth embodiment of the collector shown in FIG. 2;
FIG. 9 is an enlarged view of a portion a of the fifth embodiment of the collector shown in FIG. 2
Fig. 10 is a perspective view of the structure shown in fig. 9.
In the figure, 10 is a single crystal silicon substrate, 21 is a first intrinsic amorphous layer, 31 is a first doped amorphous layer, 41 is a first transparent conductive film layer, 51 is a first collector, 22 is a second intrinsic amorphous layer, 32 is a second doped amorphous layer, 42 is a second transparent conductive film layer, 52 is a second collector, 500 is a collector, 501 is a main gate, 502 is a sub-gate, 5021 is a first sub-gate portion, 5022 is a second sub-gate portion, 5023 is an extension region.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a heterojunction solar cell, which is shown in reference to fig. 1 and comprises a cell body. In a specific implementation process, the battery piece body comprises: the semiconductor device includes a single crystal silicon substrate 10, a first intrinsic amorphous layer 21, a first doped amorphous layer 31, and a first transparent conductive film 41 sequentially stacked on a light-receiving surface of the single crystal silicon substrate 10, and a second intrinsic amorphous layer 22, a second doped amorphous layer 32, and a second transparent conductive film 42 sequentially disposed on a back-light surface of the single crystal silicon substrate 10.
In a specific implementation, the light receiving surface of the monocrystalline silicon substrate 10 is a surface of the heterojunction solar cell directly receiving sunlight, and the back surface is a surface of the heterojunction solar cell not directly receiving sunlight, that is, a surface opposite to the light receiving surface. The first and second intrinsic amorphous layers 21 and 22 are intrinsic amorphous silicon. The doping types of the first doped amorphous layer 31 and the second doped amorphous layer 32 are opposite, wherein one of the first doped amorphous layer and the second doped amorphous layer is doped with N type, namely phosphorus is adopted for doping; the other is P-type doping, namely boron doping is adopted.
In the present invention, although the single crystal silicon substrate 10 may specifically be a P-type single crystal silicon substrate, an N-type single crystal silicon substrate may also be selected; however, in a preferred embodiment of the present invention, the single crystal silicon substrate 10 is an N-type single crystal silicon substrate. Further preferably, the first doped amorphous layer 31 is an N-type doped amorphous layer, and the second doped amorphous layer 32 is a P-type doped amorphous layer.
In the present invention, the heterojunction solar cell further includes a collector 500 disposed on the surface of the cell body, and referring to fig. 1, in this embodiment, the first collector 51 is disposed on the light receiving surface side of the cell body, and the second collector 52 is disposed on the backlight surface side of the cell body.
Referring to fig. 2, the collector 500 according to the present invention includes a main grid 501 disposed on the surface of the cell body and a sub-grid 502 vertically connected to the main grid 501. As further shown in fig. 3-10, the sub-grid 502 of the present invention has a first sub-grid portion 5021 partially overlapping the main grid 501 on the side facing away from the cell body.
Based on the specific structure of the heterojunction solar cell provided by the invention, the lap joint mode between the first auxiliary grid part 5021 and the main grid 501 can ensure that enough connecting materials are arranged at the connecting position when the main grid 501 and the auxiliary grid 502 are specifically formed, so as to ensure that the main grid 501 and the auxiliary grid 502 are reliably electrically connected, the risk that the main grid and the auxiliary grid are disconnected at the connecting position in the prior art can be effectively avoided, the effect of collecting the photo-generated current of the heterojunction solar cell is ensured, and the photoelectric conversion efficiency of the heterojunction solar cell can be optimized.
Further details of the implementation of the inventive heterojunction solar cell can be found in the following description:
referring to fig. 3, 4, 5, 6, 9, and 10, in these embodiments, the first secondary grid part 5021 forms a break at the position of the primary grid 501, i.e., the first secondary grid part 5021 is discontinuous at the position of the primary grid 501. In the specific implementation process, the design mode can save the slurry loss in the printing process of the auxiliary grid 501 to a certain extent, and further reduce the manufacturing cost of the heterojunction solar cell.
As shown in the drawing, in order to ensure a reliable lap joint between the first secondary grid part 5021 and the main grid 501, in practice, the lap length d of the part of the first secondary grid part 5021 on each side of the main grid 501 on the surface of the corresponding main grid 501 is 0.03-0.2 mm. Preferably, the overlap length d is 0.05-0.1 mm.
Referring to fig. 7 and 8, in other embodiments of the present invention, the first secondary grid part 5021 may also be continuously formed at the position of the main grid 501, i.e., the first secondary grid part 5021 does not have a fracture at the position of the main grid 501.
As some preferred implementation structures of the invention, referring to fig. 3, 4, 5, 6, 7 and 8, in these embodiments, the sub-grid 502 further has a second sub-grid part 5022 integrally formed with the main grid 501, wherein the first sub-grid part 5021 is stacked on one side surface of the corresponding first sub-grid part facing away from the cell body. When the specific auxiliary grid 502 is manufactured, the structure can be formed through twice printing, the grid breaking probability of the auxiliary grid 502 can be further reduced through the two-layer stacking structure, the height-width ratio of the auxiliary grid 502 can be increased, the series resistance of the photovoltaic module is reduced, and the photoelectric efficiency of the photovoltaic module can be further improved.
More preferably, the width of the first secondary grid part 5021 is not greater than the width of the second secondary grid part 5022, so that the surface of the cell body 100 is not shielded by the secondary grid 502 when the first secondary grid part 5021 is disposed on the surface of the second secondary grid part 5022.
In general, when the sub-gate 502 is configured by stacking the first sub-gate portion 5021 and the second sub-gate portion 5022, referring to fig. 3-8, the width of the first sub-gate portion 5021 is 20-50 μm, and the width of the second sub-gate portion 5022 is 20-60 μm; preferably, the width of the first sub-gate 5021 is 25-40 μm, and the width of the second sub-gate 5022 is 30-50 μm. When the sub-gate 502 is constituted only by the first sub-gate portion 5021, as shown in fig. 9, 10, the width of the first sub-gate portion 5021 is 20-60 μm; preferably 30-50 μm.
As still further preferred embodiments of the present invention, referring to fig. 5, 6, 8, 9 and 10, in these embodiments, the sub-gate 502 has a expanding region 5023 connected to the main gate 501, and the expanding region 5023 gradually increases in width in a direction close to the main gate 501. Based on the arrangement structure of the expanded region 5023, the connection between the main grid 501 and the auxiliary grid 502 can be more reliable.
In a specific implementation process, as shown in the figure, the width w1 of the expanded region 5023 at the edge of the main gate 501 is 2-5 times the width w2 of the expanded region 5023 away from the end of the main gate 501; preferably, the width w1 of the expanded region 5023 at the edge of the main gate 501 is 3-4 times the width w2 of the expanded region 5023 away from the end of the main gate 501. In the present invention, the width w2 of the end of the expanded region 5023 away from the main gate 501 is the same as the width of the remaining portion of the sub-gate 502 except the expanded region 5023, and when the sub-gate 502 has the first sub-gate portion 5021 and the second sub-gate portion 5022 stacked together, the width of the remaining portion of the sub-gate 502 except the expanded region 5023 can be understood as the width of the remaining portion of the second sub-gate portion 5022 except the expanded region 5023.
In the present invention, in the embodiments shown in fig. 5, 6, and 8, the expansion region 5023 and the second sub-gate 5022 are integrally formed; in the embodiment shown in fig. 9 and 10, the expanded region 5023 is integrally formed with the first secondary gate portion 5021.
In addition, in the present invention, the length of the expanded region 5023 in the extending direction of the sub-gate 502 is 0.5-2mm, preferably 0.8-1.5 mm.
For a heterojunction solar cell, the process temperature is not higher than 200 ℃, and the conductive paste used for printing the collector 500 is a low-temperature conductive paste, which generally comprises metal conductive particles (such as silver), resin, solvent, coupling agent, and the like, wherein the solid content represents the content of the metal conductive particles (such as silver) in the conductive paste. Based on this, the high solid content conductive paste has better conductivity due to the high content of the metal conductive particles, and the low solid content conductive paste has better adhesion due to the high content of the resin and the like (i.e., the part of the non-metal conductive particles).
In view of this, as still another preferred embodiment of the present invention, in a concrete implementation, the solid content of the conductive paste constituting the main gate 501 is smaller than that of the conductive paste constituting the first sub-gate portion 5022. The main grid 501 adopts low-content conductive paste, so that the high tensile force requirement of the heterojunction solar cell in the subsequent photovoltaic module assembling process can be ensured, and the reliability of the module can be ensured; and the high-content conductive paste adopted by the first secondary grid part 5022 can enable the collector 500 to have relatively small series resistance, so that the battery conversion efficiency is improved.
It is to be understood that in the embodiment shown in fig. 3, 4, 5, 6, 7 and 8, when the collector 500 has the second sub-gate 5022, the second sub-gate 5022 is printed with the same conductive paste as the main gate 501.
In the present invention, the sum of the thicknesses of the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 is smaller than the sum of the thicknesses of the second intrinsic amorphous layer 22 and the second doped amorphous layer 32.
For the heterojunction solar cell, the influence of the light absorption effect of the light receiving surface on the photoelectric conversion efficiency of the cell is far larger than the influence of the light absorption effect of the backlight surface on the photoelectric conversion efficiency of the cell, and because the sum of the thicknesses of the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 is smaller than the sum of the thicknesses of the second intrinsic amorphous layer 22 and the second doped amorphous layer 32, the loss of sunlight on the light receiving surface when the sunlight passes through the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 can be effectively reduced, the short-circuit current of the heterojunction solar cell can be improved, and the heterojunction solar cell has better photoelectric conversion efficiency.
In some more specific embodiments of the present invention, the sum of the thicknesses of the first intrinsic amorphous layer 21 and the first doped amorphous layer 31 is 6-21nm, and the sum of the thicknesses of the second intrinsic amorphous layer 22 and the second doped amorphous layer 32 is 7-30 nm.
It is further preferable that the thickness of the first intrinsic amorphous layer 21 is less than or equal to the thickness of the second intrinsic amorphous layer 22, and the thickness of the first doped amorphous layer 31 is less than or equal to the thickness of the second doped amorphous layer 32.
In specific implementation, the thickness of the first doped amorphous layer 31 is 3-15nm, and the thickness of the second doped amorphous layer 32 is 3-20 nm. Accordingly, in the embodiment shown in FIG. 1, the first intrinsic amorphous layer 21 has a thickness of 3-6nm and the second intrinsic amorphous layer 22 has a thickness of 4-10 nm.
Further, in the present invention, the thickness of the first transparent conductive film layer 41 is less than or equal to the thickness of the second transparent conductive film layer 42. For the heterojunction solar cell, because the thickness of the first transparent conductive film layer 41 is relatively small, the loss of sunlight on the light receiving surface when the sunlight passes through the first transparent conductive film layer 41 can be effectively reduced, and the heterojunction solar cell can have better photoelectric conversion efficiency.
Preferably, the pitch between two adjacent sub-gates 502 in the first collector 51 is larger than the pitch between two adjacent sub-gates 502 in the second collector 52. The large distance between the two adjacent auxiliary grids 502 on the light receiving surface can improve the effective illumination area of the light receiving surface, the small distance between the two adjacent auxiliary grids 502 on the backlight surface can reduce the series resistance of the heterojunction solar cell, and the photoelectric conversion efficiency of the heterojunction solar cell can be effectively optimized by combining the two.
In specific implementation, the distance between two adjacent sub-grids 502 on the light receiving surface is not less than 1.5 times of the distance between two adjacent sub-grids 502 on the backlight surface. In general, the distance between two adjacent auxiliary grids 300 on the light receiving surface is 1-3mm, preferably 1.5-2.5 mm; the distance between two adjacent sub-grids 502 on the backlight surface is 0.1-1.5mm, preferably 0.5-1 mm.
In addition, in the present invention, the distance between two adjacent main grids 501 on the light receiving surface and the distance between two adjacent main grids 501 on the backlight surface are substantially the same, and usually ranges from 10 mm to 55mm, and preferably ranges from 13 mm to 30 mm.
In addition, the invention also provides a manufacturing method of the heterojunction solar cell, which is used for manufacturing the heterojunction solar cell and comprises the following steps:
providing a cell body;
forming a main grid 501 on one surface of the cell body;
a first auxiliary grid part 5021 which is lapped to the surface of the main grid 501, which is far away from the cell body, is formed at one side of the cell body, where the main grid 501 is formed.
In a specific implementation process, the main grid 501 and the first sub-grid 5021 are sequentially printed and formed by different screens. Since the main grid 501 is formed first and then the first auxiliary grid part 5021 is formed, the first auxiliary grid part 5021 can be prevented from being collapsed due to being extruded by the printing screen again after being printed.
In some embodiments of the invention, before forming the first secondary grid part 5021, the manufacturing method further includes forming a second secondary grid part 5022 which is perpendicular to and integrally connected with the primary grid 501, wherein the first secondary grid 5021 is formed on one side surface of the second secondary grid 5022, which faces away from the cell body.
Further, the solid content of the conductive paste for forming the main gate 501 is less than that of the conductive paste for forming the first sub-gate part 5021.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (16)
1. The utility model provides a heterojunction solar cell, includes the cell body, its characterized in that, heterojunction solar cell still including set up in the collecting electrode on cell body surface, the collecting electrode including set up in the main bars on cell body surface and perpendicular connection to the vice bars of main bars, the vice bars have part overlap joint in the main bars deviates from a first vice bars portion of cell body side surface.
2. The heterojunction solar cell of claim 1, wherein the first sub-grid portion is formed with a discontinuity at the location of the main grid, and the overlapping length of the first sub-grid portion on each side of the main grid on the surface of the corresponding main grid is 0.03-0.2 mm.
3. The heterojunction solar cell of claim 1, wherein the first secondary grid portion is continuously patterned at the primary grid location.
4. The heterojunction solar cell of claim 1, wherein the secondary grid further comprises a second secondary grid portion integrally formed with the primary grid, and the first secondary grid portion is stacked on a side surface of the corresponding second secondary grid portion facing away from the cell body.
5. The heterojunction solar cell of claim 4, wherein the width of the first sub-gate portion is not greater than the width of the second sub-gate portion.
6. The heterojunction solar cell of any of claims 1 to 5, wherein said sub-grid has a region of extension connected to said main grid, said region of extension increasing in width in a direction closer to said main grid.
7. The heterojunction solar cell of claim 6, wherein the width of the expanded region at the edge of the main gate is 2-5 times the width of the expanded region at the end away from the main gate.
8. The heterojunction solar cell of any of claims 1 to 5, wherein the solid content of the conductive paste constituting the primary grid is less than the solid content of the conductive paste constituting the first secondary grid portion.
9. The heterojunction solar cell according to any one of claims 1 to 5, wherein the cell body comprises a monocrystalline silicon substrate, a first intrinsic amorphous layer and a first doped amorphous layer which are sequentially stacked on a light receiving surface of the monocrystalline silicon substrate, a second intrinsic amorphous layer and a second doped amorphous layer which are sequentially stacked on a backlight surface of the monocrystalline silicon substrate and have a doping type opposite to that of the first doped amorphous layer; the sum of the thicknesses of the first intrinsic amorphous layer and the first doped amorphous layer is less than the sum of the thicknesses of the second intrinsic amorphous layer and the second doped amorphous layer.
10. The heterojunction solar cell of claim 9, wherein the sum of the thicknesses of the first intrinsic amorphous layer and the first doped amorphous layer is 6-21nm and the sum of the thicknesses of the second intrinsic amorphous layer and the second doped amorphous layer is 7-30 nm.
11. The heterojunction solar cell of claim 9, wherein the thickness of the first intrinsic amorphous layer is less than or equal to the thickness of the second intrinsic amorphous layer, and the thickness of the first doped amorphous layer is less than or equal to the thickness of the second doped amorphous layer.
12. The heterojunction solar cell of claim 11, wherein the thickness of the first doped amorphous layer is 3-15nm and the thickness of the second doped amorphous layer is 3-20 nm.
13. The heterojunction solar cell of claim 9, wherein the cell body further comprises a first transparent conductive film disposed on the outer surface of the first doped amorphous layer and a second transparent conductive film disposed on the outer surface of the second doped amorphous layer, wherein the thickness of the first transparent conductive film layer is less than or equal to the thickness of the second transparent conductive film layer.
14. A method for fabricating a heterojunction solar cell according to any one of claims 1 to 13, comprising:
providing a cell body;
forming the main grid on one surface of the battery piece body;
and forming a first auxiliary grid part which is lapped to the surface of one side, away from the battery piece body, of the main grid on one side, where the main grid is formed, of the battery piece body.
15. The method of manufacturing a heterojunction solar cell of claim 14, wherein before the forming the first sub-grid portion, the method further comprises forming a second sub-grid portion perpendicular to and integrally connected with the main grid, wherein the first sub-grid is formed on a side surface of the second sub-grid facing away from the cell body.
16. The method of fabricating a heterojunction solar cell of claim 14 or 15, wherein the solid content of the conductive paste used to form the primary grid is less than the solid content of the conductive paste used to form the first secondary grid portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010989144.XA CN114284381A (en) | 2020-09-18 | 2020-09-18 | Heterojunction solar cell and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010989144.XA CN114284381A (en) | 2020-09-18 | 2020-09-18 | Heterojunction solar cell and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114284381A true CN114284381A (en) | 2022-04-05 |
Family
ID=80867368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010989144.XA Pending CN114284381A (en) | 2020-09-18 | 2020-09-18 | Heterojunction solar cell and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114284381A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116093173A (en) * | 2022-12-20 | 2023-05-09 | 江苏润阳悦达光伏科技有限公司 | N-type solar cell with dense grid structure and preparation method thereof |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005353691A (en) * | 2004-06-08 | 2005-12-22 | Sharp Corp | Electrode and solar cell, and manufacturing method thereof |
| KR20110138649A (en) * | 2010-06-21 | 2011-12-28 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
| KR20130051623A (en) * | 2011-11-10 | 2013-05-21 | 엘지전자 주식회사 | Bi-facial solar cell and the manufacturing mathod thereof |
| US20130240031A1 (en) * | 2012-03-19 | 2013-09-19 | Lg Electronics Inc. | Solar cell |
| US20130255747A1 (en) * | 2010-12-06 | 2013-10-03 | Shin-Etsu Chemical Co., Ltd. | Solar cell and solar-cell module |
| CN203536447U (en) * | 2013-11-15 | 2014-04-09 | 英利能源（中国）有限公司 | Grid line structure of solar cell and solar cell comprising same |
| CN103794663A (en) * | 2014-01-29 | 2014-05-14 | 常州天合光能有限公司 | Solar battery front electrode structure |
| DE102013206894A1 (en) * | 2013-04-17 | 2014-10-23 | Robert Bosch Gmbh | Method and device for producing a photovoltaic cell |
| CN104638032A (en) * | 2015-01-22 | 2015-05-20 | 中电电气（南京）光伏有限公司 | Positive electrode grid line of solar cell, solar cell and manufacturing method of solar cell |
| CN108183139A (en) * | 2017-12-20 | 2018-06-19 | 横店集团东磁股份有限公司 | Solar battery sheet |
| CN109392312A (en) * | 2016-06-10 | 2019-02-26 | 信越化学工业株式会社 | The manufacturing method of solar battery, the manufacture system of solar battery and solar battery |
| CN208797010U (en) * | 2018-08-22 | 2019-04-26 | 隆基绿能科技股份有限公司 | Cell piece |
| CN110660874A (en) * | 2019-09-30 | 2020-01-07 | 通威太阳能（合肥）有限公司 | Auxiliary grid electrode and solar cell |
| JP2020057694A (en) * | 2018-10-02 | 2020-04-09 | パナソニック株式会社 | Solar cell |
-
2020
- 2020-09-18 CN CN202010989144.XA patent/CN114284381A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005353691A (en) * | 2004-06-08 | 2005-12-22 | Sharp Corp | Electrode and solar cell, and manufacturing method thereof |
| KR20110138649A (en) * | 2010-06-21 | 2011-12-28 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
| US20130255747A1 (en) * | 2010-12-06 | 2013-10-03 | Shin-Etsu Chemical Co., Ltd. | Solar cell and solar-cell module |
| KR20130051623A (en) * | 2011-11-10 | 2013-05-21 | 엘지전자 주식회사 | Bi-facial solar cell and the manufacturing mathod thereof |
| US20130240031A1 (en) * | 2012-03-19 | 2013-09-19 | Lg Electronics Inc. | Solar cell |
| DE102013206894A1 (en) * | 2013-04-17 | 2014-10-23 | Robert Bosch Gmbh | Method and device for producing a photovoltaic cell |
| CN203536447U (en) * | 2013-11-15 | 2014-04-09 | 英利能源（中国）有限公司 | Grid line structure of solar cell and solar cell comprising same |
| CN103794663A (en) * | 2014-01-29 | 2014-05-14 | 常州天合光能有限公司 | Solar battery front electrode structure |
| CN104638032A (en) * | 2015-01-22 | 2015-05-20 | 中电电气（南京）光伏有限公司 | Positive electrode grid line of solar cell, solar cell and manufacturing method of solar cell |
| CN109392312A (en) * | 2016-06-10 | 2019-02-26 | 信越化学工业株式会社 | The manufacturing method of solar battery, the manufacture system of solar battery and solar battery |
| CN108183139A (en) * | 2017-12-20 | 2018-06-19 | 横店集团东磁股份有限公司 | Solar battery sheet |
| CN208797010U (en) * | 2018-08-22 | 2019-04-26 | 隆基绿能科技股份有限公司 | Cell piece |
| JP2020057694A (en) * | 2018-10-02 | 2020-04-09 | パナソニック株式会社 | Solar cell |
| CN110660874A (en) * | 2019-09-30 | 2020-01-07 | 通威太阳能（合肥）有限公司 | Auxiliary grid electrode and solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116093173A (en) * | 2022-12-20 | 2023-05-09 | 江苏润阳悦达光伏科技有限公司 | N-type solar cell with dense grid structure and preparation method thereof |
| CN116093173B (en) * | 2022-12-20 | 2023-09-29 | 江苏润阳悦达光伏科技有限公司 | N-type solar cell with dense grid structure and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204928739U (en) | Two -sided solar panel and two -sided solar cell | |
| CN105789359A (en) | Manufacturing method for double-face solar energy cell assembly | |
| CN210607282U (en) | Metal electrode component of heterojunction solar cell | |
| US20140196783A1 (en) | Solar cell, solar cell module, and method for producing solar cell | |
| CN117219687B (en) | Solar cell and photovoltaic module | |
| CN110854218A (en) | Grid line structure, solar cell, laminated tile assembly, printing method and manufacturing method | |
| CN215644514U (en) | Composite grid line electrode of solar cell, solar cell and photovoltaic module | |
| CN215600379U (en) | Photovoltaic cell and photovoltaic module | |
| CN215418193U (en) | Battery piece and photovoltaic module with same | |
| CN114284381A (en) | Heterojunction solar cell and manufacturing method thereof | |
| CN205645839U (en) | Heterojunction solar cell and module | |
| CN213184318U (en) | Heterojunction solar cell and photovoltaic module | |
| CN213184317U (en) | Heterojunction solar cell | |
| CN103545386A (en) | Solar cell electrode shape | |
| AU2022279531B1 (en) | Photovoltaic module and method for preparing the photovoltaic module | |
| CN213184316U (en) | Heterojunction solar cell and photovoltaic module | |
| CN202662651U (en) | Crystalline silicon solar cell | |
| CN213519989U (en) | Heterojunction solar cell | |
| CN213519988U (en) | Heterojunction solar cell string | |
| CN210640259U (en) | Grid line structure, solar cell piece and stack tile subassembly | |
| CN220233205U (en) | Main-grid-free heterojunction solar cell and assembly thereof | |
| CN111244198A (en) | Solar cell and photovoltaic module | |
| CN212848455U (en) | Heterojunction solar cell and photovoltaic module | |
| CN210110793U (en) | Solar cell and photovoltaic module | |
| CN212848456U (en) | Heterojunction solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |