CN205645839U - Heterojunction solar cell and module - Google Patents
Heterojunction solar cell and module Download PDFInfo
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- CN205645839U CN205645839U CN201521136973.4U CN201521136973U CN205645839U CN 205645839 U CN205645839 U CN 205645839U CN 201521136973 U CN201521136973 U CN 201521136973U CN 205645839 U CN205645839 U CN 205645839U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model relates to a solar cell field especially relates to a heterojunction solar cell and module, solar cell includes N type monocrystalline silicon piece, establish intrinsic amorphous silicon thin film layer, N type doping amorphous silicon layer and transparent conducting film layer on N type monocrystalline silicon piece part sensitive surface and first side according to the preface respectively, establish intrinsic amorphous silicon thin film layer, P type doping amorphous silicon layer and transparent conducting film layer on N type monocrystalline silicon piece part face of being shaded and second side according to the preface respectively, establish the metal gate line electrode on the transparent conducting film layer of N type monocrystalline silicon piece sensitive surface and first side, establish the metal gate line electrode on the transparent conducting film layer of N type monocrystalline silicon piece face of being shaded and second side, establish the isolated insulation strip on another part sensitive surface of N type monocrystalline silicon piece and another part face of being shaded respectively. Need not reserve the clearance between the adjacent battery piece of same battery cluster, what increase in module battery piece effectively utilizes the area, has reduced the series resistance of module.
Description
Technical field
This utility model relates to area of solar cell, particularly relates to a kind of heterojunction solar battery and module.
Background technology
Solaode is a kind of semiconductor device that can convert solar energy into electric energy, and under illumination condition, inside solar energy battery can produce photogenerated current, is exported by electric energy by electrode.In recent years, manufacture of solar cells technology constantly improves, and production cost constantly reduces, and conversion efficiency improves constantly, the application of solar cell power generation is increasingly extensive and becomes the important energy source of supply of electric power, and heterojunction solar battery technology is exactly a kind of novel silica-based high-efficiency battery technology.
For traditional silicon based solar battery, when battery is fabricated to module, the shady face of battery is attached by welding with the sensitive surface of adjacent cell, battery sliver is caused for prevention welding, needing between adjacent two panels battery to connect reserved enough gaps to welding, joint gap length is generally 2mm-3mm.Therefore, in the gap serious waste of battery module battery effectively utilize area, also add the series resistance of solar modules simultaneously.
Utility model content
For the problems referred to above, this utility model provides a kind of heterojunction solar battery and module, and it can be greatly reduced the power attenuation after battery is fabricated to module.
For solving above-mentioned technical problem, this utility model be the technical scheme is that a kind of heterojunction solar battery, including: n type single crystal silicon sheet；The most sequentially it is located at intrinsic amorphous silicon thin layer, n-type doping amorphous silicon layer and the transparent conductive film layer on n type single crystal silicon sheet part sensitive surface and the first side；The most sequentially it is located at intrinsic amorphous silicon thin layer, p-type doped amorphous silicon layer and the transparent conductive film layer on n type single crystal silicon sheet part shady face and the second side；It is located at the metal grid lines electrode on the transparent conductive film layer of n type single crystal silicon sheet sensitive surface and the first side；It is located at the metal grid lines electrode on the transparent conductive film layer of n type single crystal silicon sheet shady face and the second side；It is respectively provided at the isolated insulation bar on n type single crystal silicon sheet another part sensitive surface and another part shady face.
Preferably, the height of the metal grid lines electrode on described first side and the metal grid lines electrode on the second side is respectively higher than height and the height of the second side of the first side, the metal grid lines electrode on described first side, the metal grid lines electrode on the second side by isolated insulation bar respectively with n type single crystal silicon sheet sensitive surface metal grid lines electrode, n type single crystal silicon sheet shady face metal grid lines electrode isolation.
Preferably, described isolated insulation bar width is 0.2-2mm.
Preferably, described p-type doped amorphous silicon layer, n-type doping amorphous silicon layer and intrinsic amorphous silicon layer thickness are 1-10nm.
Preferably, the thin grid line width of described metal grid lines electrode is 10-100 μm.
Preferably, described n type single crystal silicon sheet is a piece of complete silicon chip or the silicon chip being divided into some deciles.
The invention also discloses a kind of heterojunction solar module, comprising: the first packaging plastic being located on backboard body；The multiple any of the above-described described solaode being located on the first packaging plastic, it is connected with the metal grid lines electrode of the second side by being located at its first side between the plurality of solaode, if the second packaging plastic on the solar cell, described first, second packaging plastic is coated on the surrounding of this solaode；And the front plate body being located on the second packaging plastic.
This utility model uses above technical scheme, electrode is made by first, second side at cell piece, n type single crystal silicon sheet sensitive surface electrode turns on the first side electrode, shady face electrode and the conducting of the second side electrode, use the module that this utility model solaode makes, the gap that reserved welding connects is need not between adjacent two panels cell piece, conducting is connected by battery side electrode welding, thus add battery in module effectively utilize area, also reduce welding length simultaneously, reduce the series resistance that welding introduces.Therefore, add effective usable floor area of solar modules battery, decrease the series resistance of solar modules, thus improve the conversion efficiency of solar modules.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings this utility model is further described:
Fig. 1 is this utility model one heterojunction solar battery structural representation；
Fig. 2 is this utility model one heterojunction solar battery embodiment 1 structural representation；
Fig. 3 is this utility model one heterojunction solar battery embodiment 2 structural representation；
Fig. 4 is this utility model one heterojunction solar battery embodiment 3 structural representation；
Fig. 5 is this utility model one heterojunction solar battery embodiment 4 structural representation；
Fig. 6 is this utility model one heterojunction solar modular structure schematic diagram；
Fig. 7 is the attachment structure schematic diagram of solaode in this utility model a kind of heterojunction solar module；
Fig. 8 is this utility model one heterojunction solar module embodiment 1 structural representation；
Fig. 9 is this utility model one heterojunction solar module embodiment 2 structural representation.
Detailed description of the invention
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, this utility model is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain this utility model, is not used to limit this utility model.
As it is shown in figure 1, this utility model provides a kind of heterojunction solar battery 11, comprising: n type single crystal silicon sheet 110；Sequentially it is located at intrinsic amorphous silicon thin layer 111, n-type doping amorphous silicon layer 112 and the transparent conductive film layer 114 on n type single crystal silicon sheet 110 part sensitive surface and the first side 119；Sequentially it is located at intrinsic amorphous silicon thin layer 111, p-type doped amorphous silicon layer 113 and the transparent conductive film layer 114 on n type single crystal silicon sheet 110 part shady face and the second side 120；It is located at the metal grid lines electrode 115 on the transparent conductive film layer 114 of n type single crystal silicon sheet 110 sensitive surface and the first side 119；It is located at the metal grid lines electrode 116 on the transparent conductive film layer 114 of n type single crystal silicon sheet 110 shady face and the second side 120；It is located at the n type single crystal silicon sheet 110 another part sensitive surface isolated insulation bar 117 near the first edge, side 119 and another part shady face isolated insulation bar 118 near the second edge, side 120.The height of the metal grid lines electrode 115 on described first side 119 and the metal grid lines electrode 116 on the second side 120 is respectively higher than height and the height of the second side 120 of the first side 119, and the metal grid lines electrode 116 on metal grid lines electrode the 115, second side 120 on described first side 119 is isolated with n type single crystal silicon sheet 110 sensitive surface metal grid lines electrode 116, n type single crystal silicon sheet 110 shady face metal grid lines electrode 115 respectively by isolated insulation bar 117,118.
Wherein, the width of described isolated insulation bar 117,118 is 0.2-2mm.Described transparent conductive film layer 114 thickness is 50～120nm.The transmitance of described transparent conductive film layer 114 is more than 90%.Described transparent conductive film layer 114 is at least one in tin indium oxide, Al-Doped ZnO, Graphene.Transparent conductive film layer 114 material of its sensitive surface and shady face can be different, and described metal grid lines electrode 115,116 is at least one in Ag, Cu, Al, Ni, Ti, TiN, Sn or NiCr.Described p-type doped amorphous silicon layer 113, n-type doping amorphous silicon layer 112 and intrinsic amorphous silicon layer 111 thickness are 1-10nm.The thin grid line width of described metal grid lines electrode 115,116 is 10-100 μm, and its thickness is 0.01-0.05mm.
Embodiment 1
As in figure 2 it is shown, be complete silicon chip for this utility model n type single crystal silicon sheet and sensitive surface metal grid lines electrode is many main grids gate line electrode.
Embodiment 2
As it is shown on figure 3, as different from Example 1, n type single crystal silicon sheet is divided into two deciles and sensitive surface metal grid lines electrode for without main grid gate line electrode.
Embodiment 3
As shown in Figure 4, as different from Example 1, n type single crystal silicon sheet is divided into two deciles and shady face metal grid lines electrode to be many main grids gate line electrode.
Embodiment 4
As it is shown in figure 5, as different from Example 1, n type single crystal silicon sheet is divided into two deciles and shady face metal grid lines electrode without main grid gate line electrode.
As shown in Figure 6,7, the invention also discloses a kind of heterojunction solar module, comprising: backboard body 13；The first packaging plastic 12 being located on backboard body 13；The multiple heterojunction solar batteries 11 as shown in Figure 1 being located on the first packaging plastic 12, the plurality of solaode 11 connects into battery strings, two panels solaode 11 adjacent in battery strings is linked together by the metal grid lines electrode 116 of the metal grid lines electrode 115 of the first side 119 with the second side 120, centre not preset clearance, described metal grid lines electrode is connected by least one in metal welding tin welding, metal welding welding, metal welding, conductive silver glue connection, conductive tape connection；；If the second packaging plastic 14 on the solar cell, described first packaging plastic the 12, second packaging plastic 14 is coated on the surrounding of this solaode；The front plate body 15 being located on the second packaging plastic.
Heterojunction solar module can also be implemented in the following manner: as shown in Figure 8, the heterojunction solar module schematic top plan view welded together for the solaode that metal grid lines electrode is many main grids gate line electrode.As it is shown in figure 9, be divided into two deciles and metal grid lines electrode to be the heterojunction solar module schematic top plan view that dereliction grid solar cell welds together for n type single crystal silicon sheet.
This utility model uses above design, electrode is made by first, second side at cell piece, n type single crystal silicon sheet sensitive surface electrode turns on the first side electrode, shady face electrode and the conducting of the second side electrode, use the module that this utility model solaode makes, the gap that reserved welding connects is need not between adjacent two panels cell piece, conducting is connected by battery side electrode welding, thus add battery in module effectively utilize area, also reduce welding length simultaneously, reduce the series resistance that welding introduces.Therefore, add effective usable floor area of solar modules battery, decrease the series resistance of solar modules, thus improve the conversion efficiency of solar modules.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all any amendment, equivalent and improvement etc. made within spirit of the present utility model and principle, within should be included in protection domain of the present utility model.
Claims (7)
1. a heterojunction solar battery, it is characterised in that including:
N type single crystal silicon sheet；
The most sequentially it is located at intrinsic amorphous silicon thin layer, n-type doping amorphous silicon layer and the transparent conductive film layer on n type single crystal silicon sheet part sensitive surface and the first side；
The most sequentially it is located at intrinsic amorphous silicon thin layer, p-type doped amorphous silicon layer and the transparent conductive film layer on n type single crystal silicon sheet part shady face and the second side；
It is located at the metal grid lines electrode on the transparent conductive film layer of n type single crystal silicon sheet sensitive surface and the first side；
It is located at the metal grid lines electrode on the transparent conductive film layer of n type single crystal silicon sheet shady face and the second side；
It is respectively provided at the isolated insulation bar on n type single crystal silicon sheet another part sensitive surface and another part shady face.
Heterojunction solar battery the most according to claim 1, it is characterized in that: the height of the metal grid lines electrode on described first side and the metal grid lines electrode on the second side is respectively higher than height and the height of the second side of the first side, the metal grid lines electrode on described first side, the metal grid lines electrode on the second side by isolated insulation bar respectively with n type single crystal silicon sheet sensitive surface metal grid lines electrode, n type single crystal silicon sheet shady face metal grid lines electrode isolation.
Heterojunction solar battery the most according to claim 1, it is characterised in that: described isolated insulation bar width is 0.2-2mm.
Heterojunction solar battery the most according to claim 1, it is characterised in that: described p-type doped amorphous silicon layer, n-type doping amorphous silicon layer and intrinsic amorphous silicon layer thickness are 1-10nm.
Heterojunction solar battery the most according to claim 1, it is characterised in that: the thin grid line width of described metal grid lines electrode is 10-100 μm.
Heterojunction solar battery the most according to claim 1, it is characterised in that: described n type single crystal silicon sheet is a piece of complete silicon chip or the silicon chip being divided into some deciles.
7. a heterojunction solar module, it is characterised in that including: backboard body；The first packaging plastic being located on backboard body；The multiple solaodes as described in claim 1-6 is arbitrary being located on the first packaging plastic, it is connected with the metal grid lines electrode of the second side by being located at its first side between the plurality of solaode, if the second packaging plastic on the solar cell, described first, second packaging plastic is coated on the surrounding of this solaode；And the front plate body being located on the second packaging plastic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521136973.4U CN205645839U (en) | 2015-12-31 | 2015-12-31 | Heterojunction solar cell and module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521136973.4U CN205645839U (en) | 2015-12-31 | 2015-12-31 | Heterojunction solar cell and module |
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| CN205645839U true CN205645839U (en) | 2016-10-12 |
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| CN201521136973.4U Active CN205645839U (en) | 2015-12-31 | 2015-12-31 | Heterojunction solar cell and module |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109801981A (en) * | 2019-01-24 | 2019-05-24 | 常州时创能源科技有限公司 | Solar battery sheet L shape connector and its application |
| CN109841698A (en) * | 2019-01-24 | 2019-06-04 | 常州时创能源科技有限公司 | Solar battery sheet and its application |
| CN114628536A (en) * | 2020-12-14 | 2022-06-14 | 苏州阿特斯阳光电力科技有限公司 | Segmented battery manufacturing method, segmented battery and photovoltaic module |
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2015
- 2015-12-31 CN CN201521136973.4U patent/CN205645839U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109801981A (en) * | 2019-01-24 | 2019-05-24 | 常州时创能源科技有限公司 | Solar battery sheet L shape connector and its application |
| CN109841698A (en) * | 2019-01-24 | 2019-06-04 | 常州时创能源科技有限公司 | Solar battery sheet and its application |
| CN109841698B (en) * | 2019-01-24 | 2022-06-10 | 常州时创能源股份有限公司 | Solar cell and application thereof |
| CN109801981B (en) * | 2019-01-24 | 2022-06-14 | 常州时创能源股份有限公司 | L-shaped connecting piece for solar cell and application thereof |
| CN114628536A (en) * | 2020-12-14 | 2022-06-14 | 苏州阿特斯阳光电力科技有限公司 | Segmented battery manufacturing method, segmented battery and photovoltaic module |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190604 Address after: 351111 No. 655, Guo Huan Dong Road, Hanjiang District, Putian, Fujian Co-patentee after: GS-SOLAR (CHINA) CO., LTD. Patentee after: Fujian Great Power Co., Ltd. Address before: 362000 Xiantang Community, Changtai Street, Licheng District, Quanzhou City, Fujian Province Patentee before: GS-SOLAR (CHINA) CO., LTD. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211217 Address after: No.17, Quanyuan Road, Jinjiang Economic Development Zone (wuliyuan), Quanzhou City, Fujian Province, 362000 Patentee after: FUJIAN JINSHI ENERGY Co.,Ltd. Address before: 351111 No. 655, Guo Huan Dong Road, Hanjiang District, Putian, Fujian Patentee before: FUJIAN JP-SOLAR Co.,Ltd. Patentee before: Junshi (China) energy Co., Ltd |