CN204558503U - A kind of HIT solar cell with amorphous silicon/microcrystal silicon composite bed - Google Patents
A kind of HIT solar cell with amorphous silicon/microcrystal silicon composite bed Download PDFInfo
- Publication number
- CN204558503U CN204558503U CN201420869014.2U CN201420869014U CN204558503U CN 204558503 U CN204558503 U CN 204558503U CN 201420869014 U CN201420869014 U CN 201420869014U CN 204558503 U CN204558503 U CN 204558503U
- Authority
- CN
- China
- Prior art keywords
- type
- silicon layer
- doped
- amorphous silicon
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of HIT solar cell with amorphous silicon/microcrystal silicon composite bed, it comprises: N-type silicon chip; Be located at the intrinsic amorphous silicon layer of N-type silicon chip sensitive surface and shady face; Be located at the doped p-type amorphous silicon layer in N-type silicon chip sensitive surface intrinsic amorphous silicon layer; Be located at the doped p-type microcrystal silicon layer on doped p-type amorphous silicon layer; Be located at the doped N-type amorphous silicon layer in N-type silicon chip shady face intrinsic amorphous silicon layer; Be located at the doped N-type microcrystal silicon layer on doped N-type amorphous silicon layer; Be located at the ITO transparent conductive film layer on P type microcrystal silicon layer and N-type microcrystal silicon layer respectively; Be located at the metal grid lines electrode on type silicon chip sensitive surface and shady face ITO transparent conductive film layer.The utility model optimizes the structure of HIT battery emission layer and back surface field layer, promotes short-circuit current density and the open circuit voltage of battery, reduces series resistance, thus promote battery conversion efficiency.
Description
Technical field
The utility model relates to technical field of solar cells, is specifically related to a kind of HIT solar cell with amorphous silicon/microcrystal silicon composite bed.
Background technology
It is the direction that photovoltaic research work is made great efforts that solar cell promotes conversion efficiency always.In efficient solar battery field, efficient and high stability becomes the focus of solar cell research field research and development with it for the monocrystalline silicon heterojunction HIT battery of Sanyo's exploitation.
Wherein, HIT solar cell adopts the a-Si:H film of doping to build up emission layer and the back surface field layer of battery usually, and compare traditional single crystal silicon solar cell, HIT battery has higher open circuit voltage.The quality of emission layer and back surface field layer material quality directly determines the conversion efficiency of battery.Emission layer needs on the one hand the higher internal electric field being effectively doped to battery and providing enough, reduce the series resistance of battery, also need emission layer to have wider optical band gap to reduce the parasitic absorption of material as window layer material on the other hand, improve the short wave response of battery.Cell back field layer needs the higher battery that is effectively doped to equally provides enough back reflection fields to promote battery open circuit voltage, reduces the series resistance of battery.
But, if directly adopt the a-Si:H thin-film material of doping as the emission layer of battery and back surface field layer, because in body, defect is more, parasitic absorption and minority carrier recombination higher, the shortwave of battery rings and reduces, thus reduces short-circuit current density and fill factor, curve factor.
Utility model content
The purpose of this utility model is the defect overcoming prior art existence, and provide a kind of HIT solar cell with amorphous silicon/microcrystal silicon composite bed, it improves battery conversion efficiency.
For achieving the above object, the utility model adopts following design:
Have a HIT solar cell for amorphous silicon/microcrystal silicon composite bed, it comprises: N-type silicon chip; Be located at the intrinsic amorphous silicon layer of N-type silicon chip sensitive surface and shady face; Be located at the doped p-type amorphous silicon layer in N-type silicon chip sensitive surface intrinsic amorphous silicon layer; Be located at the doped p-type microcrystal silicon layer on doped p-type amorphous silicon layer; Be located at the doped N-type amorphous silicon layer in N-type silicon chip shady face intrinsic amorphous silicon layer; Be located at the doped N-type microcrystal silicon layer on doped N-type amorphous silicon layer; Be located at the ITO transparent conductive film layer on doped p-type microcrystal silicon layer and doped N-type microcrystal silicon layer respectively; Be located at the metal grid lines electrode on N-type silicon chip sensitive surface and shady face ITO transparent conductive film layer.
Preferably, the thickness of described doped p-type amorphous silicon layer is 0 ~ 10nm, and conductivity is greater than 10
-6s/cm, optical band gap width is 1.8eV ~ 1.9eV.
Preferably, the thickness of described doped p-type microcrystal silicon layer is 1nm ~ 20nm, and conductivity is greater than 10
-2s/cm, optical band gap width is 1.9eV ~ 2.1eV.
Preferably, the thickness of described doped N-type amorphous silicon layer is 0 ~ 10nm, and conductivity is greater than 10
-3s/cm.
Preferably, the thickness of described doped N-type microcrystal silicon layer is 1 ~ 20nm, and conductivity is greater than 10
-1s/cm.
Preferably, the thickness of described ITO transparent conductive film layer is 80nm ~ 110nm, and conductivity is greater than 10
3s/cm.
The utility model adopts above technical scheme, battery composed emission layer is formed by the doped p-type microcrystal silicon layer and doped p-type amorphous silicon layer that adopt wide optical band gap, high conductivity, high conductivity doped N-type microcrystal silicon layer and N doping type amorphous silicon layer is adopted to form the compound back surface field layer of battery, optimize the material structure of HIT battery emission layer and back surface field layer, promote short-circuit current density and the open circuit voltage of battery, reduce series resistance, thus promote battery conversion efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model HIT solar cell.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
The utility model discloses a kind of HIT solar cell, as shown in Figure 1, it comprises: N-type silicon chip 1, and described N-type silicon chip 1 has sensitive surface and shady face; The sensitive surface of described N-type silicon chip 1 and shady face are equipped with intrinsic amorphous silicon layer 2; The intrinsic amorphous silicon layer 2 of described N-type silicon chip 1 sensitive surface is provided with doped p-type amorphous silicon layer 3; Doped p-type microcrystal silicon layer 4 is provided with on described doped p-type amorphous silicon layer 3; The intrinsic amorphous silicon layer 2 of described N-type silicon chip 1 shady face is provided with doped N-type amorphous silicon layer 5; Doped N-type microcrystal silicon 6 is provided with on described doped N-type amorphous silicon layer 5; Described doped p-type microcrystal silicon layer 4 and doped N-type microcrystal silicon layer 6 are equipped with ITO transparent conductive film layer 7; Described ITO transparent conductive film layer 7 is provided with metal grid lines electrode 8.
Wherein, the doped p-type amorphous silicon layer 3 in the intrinsic amorphous silicon layer 2 of described N-type silicon chip 1 sensitive surface, its conductivity is greater than 10
-6s/cm; The conductivity of doped p-type microcrystal silicon layer 4 is greater than 10
-2s/cm; The conductivity of doped N-type amorphous silicon layer 5 is greater than 10
-3s/cm; The conductivity of doped N-type microcrystal silicon layer 6 is greater than 10
-1s/cm; The thickness of described ITO transparent conductive film layer 7 is 80nm ~ 110nm, and conductivity is greater than 10
3s/cm.
Wherein, described doped N-type amorphous silicon layer 5 shape and doped N-type microcrystal silicon layer 6 form compound back surface field layer, be conducive to the open circuit voltage promoting battery, doped p-type microcrystal silicon layer 4 and doped p-type amorphous silicon layer 3 form battery composed emission layer, the short-circuit current density of its Integral lifting battery and open circuit voltage, reduce series resistance, thus promote battery conversion efficiency.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (6)
1. have a HIT solar cell for amorphous silicon/microcrystal silicon composite bed, it is characterized in that, it comprises:
N-type silicon chip;
Be located at the intrinsic amorphous silicon layer of N-type silicon chip sensitive surface and shady face;
Be located at the doped p-type amorphous silicon layer in N-type silicon chip sensitive surface intrinsic amorphous silicon layer;
Be located at the doped p-type microcrystal silicon layer on doped p-type amorphous silicon layer;
Be located at the doped N-type amorphous silicon layer in N-type silicon chip shady face intrinsic amorphous silicon layer;
Be located at the doped N-type microcrystal silicon layer on doped N-type amorphous silicon layer;
Be located at the ITO transparent conductive film layer on doped p-type microcrystal silicon layer and doped N-type microcrystal silicon layer respectively;
Be located at the metal grid lines electrode on N-type silicon chip sensitive surface and shady face ITO transparent conductive film layer.
2. the HIT solar cell with amorphous silicon/microcrystal silicon composite bed according to claim 1, is characterized in that: the thickness of described doped p-type amorphous silicon layer is 0 ~ 10nm, and conductivity is greater than 10
-6s/cm, optical band gap width is 1.8eV ~ 1.9eV.
3. the HIT solar cell with amorphous silicon/microcrystal silicon composite bed according to claim 1, is characterized in that: the thickness of described doped p-type microcrystal silicon layer is 1nm ~ 20nm, and conductivity is greater than 10
-2s/cm, optical band gap width is 1.9eV ~ 2.1eV.
4. the HIT solar cell with amorphous silicon/microcrystal silicon composite bed according to claim 1, is characterized in that: the thickness of described doped N-type amorphous silicon layer is 0 ~ 10nm, and conductivity is greater than 10
-3s/cm.
5. the HIT solar cell with amorphous silicon/microcrystal silicon composite bed according to claim 1, is characterized in that: the thickness of described doped N-type microcrystal silicon layer is 1 ~ 20nm, and conductivity is greater than 10
-1s/cm.
6. the HIT solar cell with amorphous silicon/microcrystal silicon composite bed according to claim 1, is characterized in that: the thickness of described ITO transparent conductive film layer is 80nm ~ 110nm, and conductivity is greater than 10
3s/cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420869014.2U CN204558503U (en) | 2014-12-31 | 2014-12-31 | A kind of HIT solar cell with amorphous silicon/microcrystal silicon composite bed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420869014.2U CN204558503U (en) | 2014-12-31 | 2014-12-31 | A kind of HIT solar cell with amorphous silicon/microcrystal silicon composite bed |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204558503U true CN204558503U (en) | 2015-08-12 |
Family
ID=53833583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420869014.2U Active CN204558503U (en) | 2014-12-31 | 2014-12-31 | A kind of HIT solar cell with amorphous silicon/microcrystal silicon composite bed |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204558503U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878594A (en) * | 2018-09-05 | 2018-11-23 | 苏州钱正科技咨询有限公司 | A kind of silicon heterogenous photovoltaic cell and its manufacturing method |
| CN109192798A (en) * | 2018-09-06 | 2019-01-11 | 苏州钱正科技咨询有限公司 | P type single crystal silicon HIT photovoltaic cell and its manufacturing method |
| CN111063757A (en) * | 2019-11-29 | 2020-04-24 | 晋能光伏技术有限责任公司 | Efficient crystalline silicon/amorphous silicon heterojunction solar cell and preparation method thereof |
| CN113394309A (en) * | 2021-01-30 | 2021-09-14 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Solar cell and preparation method thereof |
-
2014
- 2014-12-31 CN CN201420869014.2U patent/CN204558503U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878594A (en) * | 2018-09-05 | 2018-11-23 | 苏州钱正科技咨询有限公司 | A kind of silicon heterogenous photovoltaic cell and its manufacturing method |
| CN109192798A (en) * | 2018-09-06 | 2019-01-11 | 苏州钱正科技咨询有限公司 | P type single crystal silicon HIT photovoltaic cell and its manufacturing method |
| CN111063757A (en) * | 2019-11-29 | 2020-04-24 | 晋能光伏技术有限责任公司 | Efficient crystalline silicon/amorphous silicon heterojunction solar cell and preparation method thereof |
| CN113394309A (en) * | 2021-01-30 | 2021-09-14 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Solar cell and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102766908B (en) | The Boron diffusion method of crystal silicon solar energy battery | |
| CN103296123B (en) | P-type carbon quantum dot/N-type silicon nanowire array heterojunction solar battery and preparation method thereof | |
| CN204558503U (en) | A kind of HIT solar cell with amorphous silicon/microcrystal silicon composite bed | |
| CN102683468A (en) | Emitter structure of crystal silicon heterojunction solar battery | |
| CN107369726B (en) | n-type crystalline silicon double-sided solar cell | |
| CN204596801U (en) | A kind of N-type double-sided solar battery sheet of many main grids | |
| CN106024917A (en) | Solar cell and solar cell module | |
| CN209071340U (en) | A kind of SE-PERC monocrystaline silicon solar cell | |
| CN103227228A (en) | P-type silicon substrate heterojunction cell | |
| CN206460967U (en) | A kind of cadmium telluride diaphragm solar battery | |
| CN216084899U (en) | Solar cell applying phase change heat storage to new energy | |
| CN205016536U (en) | Heterojunction solar cell | |
| CN202662651U (en) | Crystalline silicon solar cell | |
| CN202384349U (en) | Silicon-based heterojunction solar battery | |
| CN205081126U (en) | Solar cell's grid line electrode structure | |
| CN204497242U (en) | A kind of electrode structure of N-type double-side solar cell | |
| CN210052747U (en) | Cell structure capable of improving photoelectric conversion efficiency of heterojunction solar cell | |
| CN104282772A (en) | Positive electrode solar crystalline silicon battery with four main grid lines | |
| CN203434166U (en) | Four-main grid positive electrode solar crystalline silica cell structure | |
| CN202712196U (en) | Back electrode structure of N type back-contact bifacial solar cell | |
| CN201877454U (en) | Solar cell with HIT (Heterojunction with Intrinsic Thinlayer) structure | |
| CN205789995U (en) | A kind of solar battery sheet and solar module | |
| CN203179931U (en) | Heterojunction cell with P-type silicon substrate | |
| CN215118921U (en) | Heterojunction efficient battery | |
| CN103681935A (en) | An amorphous silicon laminated solar battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171030 Address after: 362000, No. five, wellspring Road, Jinjiang Economic Development Zone, Quanzhou, Fujian, 17 Patentee after: Fujian Jinshi Energy Co., Ltd. Address before: 362000, Fujian 2, Quanzhou province Quanzhou city Licheng District hi tech Park Patentee before: Quanzhou City Botai Semiconductor Technology Co., Ltd. |