CN202678327U - Positive grid line electrode structure - Google Patents
Positive grid line electrode structure Download PDFInfo
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- CN202678327U CN202678327U CN 201220379233 CN201220379233U CN202678327U CN 202678327 U CN202678327 U CN 202678327U CN 201220379233 CN201220379233 CN 201220379233 CN 201220379233 U CN201220379233 U CN 201220379233U CN 202678327 U CN202678327 U CN 202678327U
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- grid line
- secondary grid
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- electrode structure
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Abstract
A positive grid line electrode structure comprises a plurality of first auxiliary grid lines (11), and at least two main grid lines (20) intersected with the first auxiliary grid lines (11); each main grid line (20) is divided into a plurality of sections which are connected through connecting wires (22); third auxiliary grid lines (13) are arranged at the first section and the last section of each main grid line (20); and an embedded section (13b) of each third auxiliary grid line (13) is overlapped with the corresponding first section or last section, and an exposed section (13a) is intersected with one first auxiliary grid line (11). The positive grid line electrode structure has the advantages that alignment and printing can be carried out quickly and accurately during the process of secondary overprinting, the consumption of silver paste is reduced, and the conversion efficiency of a battery is improved.
Description
Technical field
The utility model relates to the crystal silicon solar energy battery technical field, is specifically related to a kind of front gate line electrode structure of using the crystal silicon solar energy battery that two-shot chromatography technique is made.
Background technology
In the front gate line electrode of solar cell, the effect of secondary grid line is to collect photo-generated carrier, in order to reduce series resistance, its depth-width ratio is the bigger the better, and the effect of main grid line mainly is for components welding, does not bear the function of collected current, need not to pursue depth-width ratio.But owing to main grid line and secondary grid line same screen painting, when pursuing secondary grid line depth-width ratio, the height of main grid line also can increase accordingly at present, and the use amount that this has just increased silver-colored slurry has increased production cost.
The State Intellectual Property Office website discloses a kind of patent application document of two-shot chromatography technique, by increasing by one printing process main grid line and the fractionation of secondary grid line of front electrode are printed, but this patent application document has only provided a kind of technique, simply with main grid line and the separately printing of secondary grid line, and the front gate line electrode structure is not redesigned, battery efficiency does not further improve, and the use amount of slurry does not obtain the reduction amount of expection, there is the process of a contraposition in other twice printing, the main grid line prints skew easily, causes the components welding difficulty.
The utility model content
The technical problems to be solved in the utility model is a kind of fast and accurately contraposition printing in the two-shot chromatography process to be provided, to reduce the front gate line electrode structure that silver is starched use amount, improved battery conversion efficiency.
The technical solution of the utility model is, a kind of like this front gate line electrode structure is provided, it comprises some the first secondary grid lines, intersects with the first secondary grid line and is at least two main grid line, described main grid line be divided into multistage and the section with section between be connected by connecting line, first section of described main grid line and end section also are provided with the 3rd secondary grid line, the interior block of described the 3rd secondary grid line with corresponding first section or latter end overlaps, revealed section is crossing with the first secondary grid line.
Described some the first secondary grid lines equidistantly are arranged in parallel, and described main grid line and the first secondary grid line intersect vertically, and the revealed section of described the 3rd secondary grid line also intersects vertically with the first secondary grid line.
The described the 3rd secondary grid line is wider than the first secondary grid line.
Each section on the described main grid line is rectangular section, and described connecting line is positioned at the centre position of rectangular section broad ways.
The interior block of described the 3rd secondary grid line overlaps in the centre position of rectangular section broad ways.
Described connecting line is wider and narrower than rectangular section than the first secondary grid line.
Distance between the measure-alike and rectangular section of each rectangular section of described main grid line equates.
The two ends of described some the first secondary grid lines are connected with respectively the second secondary grid line, on described some the first secondary grid lines first be connected bar the first secondary grid line and be connected successively with the described second secondary grid line head and the tail.
After adopting said structure, the utility model compared with prior art has the following advantages:
(1) compares with common continous way main grid line, the main grid line that the utility model provides is segmentation structure, links to each other with connecting line between section and the section, and the benefit that designs like this is: on the one hand, the area of main grid line reduces, the slurry that means printing reduces, and production cost reduces, on the other hand, increased light-receiving area, the photo-generated carrier of generation is increased, improved the short circuit current of battery, thereby improve the cell photoelectric conversion efficiency.
(2) the 3rd secondary grid lines have the function of contraposition printing.Because the 3rd secondary grid line is provided with interior block and revealed section, after the two-shot chromatography printing, check the position of the 3rd secondary grid line, just can judge about whether the main grid line exists and be offset and rotation offset, the convenient position of judging and adjusting the main grid line, the interior block of other the 3rd secondary grid line has guaranteed that there be slight fully the contacting of the 3rd secondary grid line and main grid line that still can keep when being offset up and down in printing, can guarantee like this that good contact is beneficial to again the welding of assembly.
As improvement, described some the first secondary grid lines equidistantly are arranged in parallel, described main grid line and the first secondary grid line intersect vertically, the revealed section of described the 3rd secondary grid line also intersects vertically with the first secondary grid line, make the front gate line electrode structural entity layout after the moulding regular, compact conformation, and light-receiving area is even, the photo-generated carrier that produces also is evenly distributed, and has further improved the cell photoelectric conversion efficiency.
As further improvement, the described the 3rd secondary grid line is wider than the first secondary grid line, has reduced the resistance in the current delivery process.
As further improvement, each section on the described main grid line is rectangular section, and described connecting line is positioned at the centre position of rectangular section broad ways, is convenient to the welding of connecting line and assembly in follow-up welding process, avoid the increase of assembly series resistance, cause the loss of power.
As further improvement, the interior block of described the 3rd secondary grid line overlaps in the centre position of rectangular section broad ways, like this after the two-shot chromatography printing, check whether the 3rd secondary grid line vertically is in the centre position of main grid line rectangular section, just can judge more easily about whether the main grid line exists to be offset and rotation offset the position of more convenient judgement and adjustment main grid line.
As further improvement, described connecting line is wider and narrower than rectangular section than the first secondary grid line, the area of main grid line is reduced, the slurry that means printing is also further reduced, and production cost also further reduces, on the other hand, further increased light-receiving area, the photo-generated carrier of generation is further increased, further improved the short circuit current of battery, thereby further improve the cell photoelectric conversion efficiency.
As further improvement, the distance between the measure-alike and rectangular section of each rectangular section of described main grid line equates, so that main grid line silver slurry Stress Release in sintering process is even.
As further improvement, the two ends of described some the first secondary grid lines are connected with respectively the second secondary grid line, on described some the first secondary grid lines first be connected bar the first secondary grid line and be connected successively with the described second secondary grid line head and the tail, when the first secondary grid line has fracture, electric current on the first secondary grid line broken end section can by the second secondary grid line flow to contiguous also with the first secondary grid line that the second secondary grid line is connected on, finally flow on the main grid line.
Description of drawings
Fig. 1 is the structural representation of embodiment one of the front gate line electrode structure of for the first time chromatography of the utility model.
Fig. 2 is the structural representation of embodiment one of the front gate line electrode structure of for the second time chromatography of the utility model.
Fig. 3 is the structural representation of the embodiment one of the utility model front gate line electrode structure behind two-shot chromatography.
Fig. 4 is the structural representation of embodiment two of the front gate line electrode structure of for the first time chromatography of the utility model.
Fig. 5 is the structural representation of embodiment two of the front gate line electrode structure of for the second time chromatography of the utility model.
Fig. 6 is the structural representation of the embodiment two of the utility model front gate line electrode structure behind two-shot chromatography.
Shown in the figure: 11, the first secondary grid line, the 12, second secondary grid line, the 13, the 3rd secondary grid line, 13a, revealed section, 13b, interior block, 20, the main grid line, 21, rectangular section, 22, connecting line.
Embodiment
Below in conjunction with accompanying drawing front gate line electrode structure of the present utility model is described further.
Extremely shown in Figure 6 such as Fig. 1, front gate line electrode structure of the present utility model, it comprises some the first secondary grid lines 11, intersects with the first secondary grid line 11 and is at least two main grid line 20.
Unlike the prior art be: described main grid line 20 be divided into multistage and the section with section between be connected by connecting line 22; First section of described main grid line 20 and end section also are provided with the 3rd secondary grid line 13, the interior block 13b of the described the 3rd secondary grid line 13 with corresponding first section or latter end overlaps, revealed section 13a is crossing with the first secondary grid line 11.
Described some the first secondary grid lines 11 equidistantly are arranged in parallel, and described main grid line 20 and the first secondary grid line 11 intersect vertically, and the revealed section 13a of the described the 3rd secondary grid line 13 also intersects vertically with the first secondary grid line 11.
The secondary grid line of the described the 3rd secondary grid line 13 to the first 11 is wide.
Each section on the described main grid line 20 is rectangular section 21, and described connecting line 22 is positioned at the centre position of rectangular section 21 broad wayss.
The interior block 13b of the described the 3rd secondary grid line 13 overlaps in the centre position of rectangular section 21 broad wayss.
The secondary grid line of described connecting line 22 to the first 11 is wide and narrower than rectangular section 21.
Distance between the measure-alike and rectangular section 21 of each rectangular section 21 of described main grid line 20 equates.
The two ends of described some the first secondary grid lines 11 are connected with respectively the second secondary grid line 12, on described some the first secondary grid lines 11 first be connected bar the first secondary grid line and be connected successively with the described second secondary grid line 12 head and the tail.That is to say that on some the first secondary grid lines 11 first and last bar the first secondary grid line consist of the periphery of front gate line electrode structure with the second secondary grid 12 of the second secondary grid 12 lines of the first secondary grid line 11 1 ends and first secondary grid line 11 other ends.
The described first secondary grid line 11, the second secondary grid line 12 and the 3rd secondary grid line 13 are the positive secondary gate line electrode structure of for the first time chromatography, described main grid line 20 is the front main grid line electrode structure of for the second time chromatography, and the front main grid line electrode structure of the positive secondary gate line electrode structure of for the first time chromatography and for the second time chromatography has consisted of front gate line electrode structure of the present utility model.
Embodiment 1
Referring to figs. 1 to Fig. 3.Polysilicon chip is of a size of 156mm * 156mm, Φ 220mm.Main grid line 20 is 3, and the width of the first secondary grid line 11 and the second secondary grid line 12 is 50 μ m, and the 3rd secondary grid line 13 is 6, and width is 180 μ m, and the length of the built-in part 13b of the 3rd secondary grid line 13 is 2mm.
Every main grid line 20 is comprised of 8 sections rectangular section 21 and 7 connecting lines 22, and rectangular section 21 width are 1.6mm, and length is 10.5mm, and connecting line 22 length are 8.5mm, and width is 150 μ m.
The front gate line electrode structure of polysilicon chip is through after the above structural design, and main grid line 20 parts silver slurry saves 42%, has also increased light-receiving area simultaneously.
After will printing through first, second through the polysilicon chip behind making herbs into wool, diffusion, etching, the plated film, load onto the half tone with positive secondary gate line electrode structure plan shown in Figure 1, carry out the printing of secondary grid line, this is the 3rd road printing, it is placed in the middle in cell piece to adjust pattern, enters afterwards oven for drying.Load onto the half tone with front main grid line electrode structure plan shown in Figure 2, carry out the printing of main grid line, this is the 4th road printing.Whether chromatography is accurate to observe main grid line and secondary grid line pattern position.Concrete grammar is: observe the 3rd secondary grid line 13 whether vertical center in the minor face of its rectangular section 21 that intersects, with this judge the printing of main grid line whether exist about skew and rotation offset, the convenient adjustment.Whether the revealed section 13a length of then observing the 3rd secondary grid line 13 at main grid line two ends equates, judges with this whether the printing of main grid line exists up and down skew.Because the 3rd secondary grid line 13 has interior block 13b, even there is slight up and down skew also not affect battery performance and welding performance.Finish printing the making of namely finishing polycrystalline silicon solar cell by oversintering.
Embodiment 2
With reference to figure 4 to Fig. 6.Monocrystalline silicon piece is of a size of 125mm * 125mm, Φ 165mm.Main grid line 20 is 2, and the width of the first secondary grid line 11 and the second secondary grid line 12 is 50 μ m, and the 3rd secondary grid line 13 is 4, and width is 220 μ m, and the length of the interior block 13b of the 3rd secondary grid line 13 is 1.5mm.
Every main grid line 20 is comprised of 6 sections rectangular section 21 and 5 connecting lines 22, and rectangular section 21 width are 1.6mm, and length is 11mm, and connecting line 22 length are 9mm,, width is 150 μ m.
The front gate line electrode structure of polysilicon chip is through after the above structural design, and main grid line 20 parts silver slurry saves 43.2%, has also increased light-receiving area simultaneously.
Will be through the polysilicon chip behind making herbs into wool, diffusion, etching, the plated film through the one the, after the printing of two roads, load onto the half tone with positive secondary gate line electrode structure plan shown in Figure 4, carry out the printing of secondary grid line, this is the 3rd road printing, it is placed in the middle in cell piece to adjust pattern, enters afterwards oven for drying.Load onto the half tone with front main grid line electrode structure plan shown in Figure 5, carry out the printing of main grid line, this is the 4th road printing.Whether chromatography is accurate to observe main grid line and secondary grid line pattern position.Concrete mode is: observe the 3rd secondary grid line 13 whether vertical center in the minor face of its rectangular section 21 that intersects, with this judge the printing of main grid line whether exist about skew and rotation offset, the convenient adjustment.Whether the revealed section 13a length of then observing the 3rd secondary grid line 13 at main grid line two ends equates, judges with this whether the printing of main grid line exists up and down skew.Because the 3rd secondary grid line 13 has interior block 13b, even there is slight up and down skew also not affect battery performance and welding performance.Finish printing the making of namely finishing polycrystalline silicon solar cell by oversintering.
In sum, no matter monocrystalline silicon battery or polycrystal silicon cell, no matter also battery size how, can utilize front gate line electrode structure of the present utility model to carry out the front electrode secondary overprinting printing.
Claims (8)
1. front gate line electrode structure, it comprises some the first secondary grid lines (11), intersects with the first secondary grid line (11) and is at least two main grid line (20), it is characterized in that: described main grid line (20) be divided into multistage and the section with section between be connected by connecting line (22), first section of described main grid line (20) and end section also are provided with the 3rd secondary grid line (13), the interior block (13b) of the described the 3rd secondary grid line (13) with corresponding first section or latter end overlaps, revealed section (13a) intersects with the first secondary grid line (11).
2. front gate line electrode structure according to claim 1, it is characterized in that: described some the first secondary grid lines (11) equidistantly are arranged in parallel, described main grid line (20) intersects vertically with the first secondary grid line (11), and the revealed section (13a) of the described the 3rd secondary grid line (13) also intersects vertically with the first secondary grid line (11).
3. front gate line electrode structure according to claim 1, it is characterized in that: the described the 3rd secondary grid line (13) is wider than the first secondary grid line (11).
4. front gate line electrode structure according to claim 1 is characterized in that: each section on the described main grid line (20) is rectangular section (21), and described connecting line (22) is positioned at the centre position of rectangular section (21) broad ways.
5. front gate line electrode structure according to claim 4, it is characterized in that: the interior block (13b) of the described the 3rd secondary grid line (13) overlaps in the centre position of rectangular section (21) broad ways.
6. front gate line electrode structure according to claim 4, it is characterized in that: described connecting line (22) is wider and narrower than rectangular section (21) than the first secondary grid line (11).
7. front gate line electrode structure according to claim 4 is characterized in that: the distance between the measure-alike and rectangular section (21) of each rectangular section (21) of described main grid line (20) equates.
8. front gate line electrode structure according to claim 1, it is characterized in that: the two ends of described some the first secondary grid lines (11) are connected with respectively the second secondary grid line (12), on described some the first secondary grid lines (11) first be connected bar the first secondary grid line and be connected successively with the described second secondary grid line (12) head and the tail.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220379233 CN202678327U (en) | 2012-07-31 | 2012-07-31 | Positive grid line electrode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220379233 CN202678327U (en) | 2012-07-31 | 2012-07-31 | Positive grid line electrode structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202678327U true CN202678327U (en) | 2013-01-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220379233 Withdrawn - After Issue CN202678327U (en) | 2012-07-31 | 2012-07-31 | Positive grid line electrode structure |
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| Country | Link |
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| CN (1) | CN202678327U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102779861A (en) * | 2012-07-31 | 2012-11-14 | 宁波尤利卡太阳能科技发展有限公司 | Electrode structure with grid lines on front surface |
| CN105599431A (en) * | 2016-01-08 | 2016-05-25 | 上海艾力克新能源有限公司 | Crystalline silicon solar cell secondary printing front face electrode overprinting screen printing plate graph structure |
-
2012
- 2012-07-31 CN CN 201220379233 patent/CN202678327U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102779861A (en) * | 2012-07-31 | 2012-11-14 | 宁波尤利卡太阳能科技发展有限公司 | Electrode structure with grid lines on front surface |
| CN102779861B (en) * | 2012-07-31 | 2014-12-31 | 宁波尤利卡太阳能科技发展有限公司 | Electrode structure with grid lines on front surface |
| CN105599431A (en) * | 2016-01-08 | 2016-05-25 | 上海艾力克新能源有限公司 | Crystalline silicon solar cell secondary printing front face electrode overprinting screen printing plate graph structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20130116 Effective date of abandoning: 20141231 |
|
| RGAV | Abandon patent right to avoid regrant |