CN210092099U

CN210092099U - Z-shaped pattern slotting structure suitable for thin-sheet PERC battery

Info

Publication number: CN210092099U
Application number: CN201921558571.1U
Authority: CN
Inventors: 眭山; 张鹏; 陈坤; 王璞; 王岚; 苏荣; 李忠涌
Original assignee: Tongwei Solar Chengdu Co Ltd; Tongwei Solar Hefei Co Ltd
Current assignee: Tongwei Solar Chengdu Co Ltd; Tongwei Solar Anhui Co Ltd
Priority date: 2019-09-19
Filing date: 2019-09-19
Publication date: 2020-02-18
Anticipated expiration: 2029-09-19

Abstract

The utility model discloses a "Z" word figure fluting structure suitable for thin slice PERC battery, including the silicon substrate, locate the passive film at the silicon substrate back and locate the fluting line on the passive film, the fluting line includes the perpendicular laser groove that a plurality of equidistant horizontal laser grooves of arranging and a plurality of equidistant arranging, the length in horizontal laser groove and perpendicular laser groove equals, and horizontal laser groove and perpendicular laser groove end to end form the groove line of "Z" type structure, and many fluting lines have been arranged to passive film surface equidistance. The utility model discloses PERC solar cell's back passive film fluting structure, the battery back aluminium thick liquid is good with the silicon chip contact, and battery efficiency keeps promoting slightly, more reflects opening to press and pack to have the increase, especially to thin silicon chip, and this fluting figure battery breakage rate reduces, and the angularity reduces.

Description

Z-shaped pattern slotting structure suitable for thin-sheet PERC battery

Technical Field

The utility model relates to a photovoltaic cell technical field specifically is a "Z" word figure fluting structure suitable for thin slice PERC battery.

Background

The improvement of the efficiency and the cost reduction of the solar cell are two main subjects of photovoltaic development, the further improvement of the efficiency is very limited due to the serious back surface recombination of a conventional aluminum back surface field, and the back surface recombination can be greatly reduced by a back surface coating passivation film, so that the minority carrier lifetime is prolonged, and the cell efficiency is greatly improved.

The passive film is not electrically conductive and insulated, the back surface is aluminum paste, current needs to be led out from the groove of the passive film on the back surface, the design of the groove pattern has great influence on the electrical property of the battery, in the prior art, the application number '201621361451.9' is a back side passivation film groove structure of a back side passivation solar cell, which comprises a silicon substrate, as shown in the attached figure 1, a passivation film arranged on the back surface of a silicon substrate and a groove arranged on the passivation film, rectangular areas distributed in an array are further arranged on the passivation film, the grooves are formed outside the rectangular areas, the slots comprise a horizontal slot and a vertical slot which is vertical to the horizontal slot, the horizontal slots are a plurality of horizontal slots, two adjacent horizontal slots are parallel to each other and are arranged at the same interval, the vertical slots are also multiple, two adjacent vertical slots are parallel to each other and arranged at the same interval, and the horizontal slots are not in contact with the vertical slots. However, the grooving structure of the rear passivation film is not reasonable in grooving design for the thin sheet, more fragments are caused, and the warpage of the battery sheet is higher.

Therefore, it is necessary to design a new passivation trench structure on the backside of the PERC solar cell, especially for the thin sheet, which can reduce the debris and the warpage.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing a "Z" word figure fluting structure suitable for thin slice PERC battery to solve the problem that proposes among the above-mentioned background art.

In order to achieve the above object, the utility model provides a following technical scheme:

the utility model provides a "Z" word figure fluting structure suitable for thin slice PERC battery, includes the silicon substrate, locates the passive film at the silicon substrate back and locates the fluting line on the passive film, the fluting line includes the perpendicular laser groove that horizontal laser groove and a plurality of equidistant arrange that a plurality of equidistant arrange were arranged, the length in horizontal laser groove and perpendicular laser groove equals, and horizontal laser groove and perpendicular laser groove end to end form the slotline of "Z" type structure, many fluting lines of having arranged of passive film surface equidistance.

Preferably, the surface of the passivation film is further provided with back electrodes distributed in an array manner, and the back electrodes are of a rectangular structure.

Preferably, the rectangular structural arrangement mode of the back electrode is a 5 × 4 square matrix, the length of each rectangular structural area is 15-30mm, and the width is 1.2-4 mm.

Preferably, the equidistant line segments of the horizontal laser grooves are distributed at intervals, the vertical distances of the adjacent horizontal laser grooves are equal, and the line segments are distributed at intervals in a staggered way; the equidistant line segments of the vertical laser grooves are distributed at intervals, the vertical distances of the adjacent vertical laser grooves are equal, and the line sections are distributed at intervals in a staggered way.

Preferably, the distance between the horizontal laser groove line segments is 0.5-2.5 mm; the distance between the vertical laser groove line segments is 0.5-2.5 mm.

Preferably, the edges of the outer parts of the horizontal laser groove and the vertical laser groove, which are close to the silicon substrate, are provided with square frame laser grooves, and the square frame laser grooves are in contact with the adjacent horizontal laser groove and the adjacent vertical laser groove.

Compared with the prior art, the beneficial effects of the utility model are that:

the utility model discloses a PERC solar cell's back passive film fluting structure, the battery back aluminium thick liquid is good with the silicon chip contact, and battery efficiency keeps promoting slightly, more reflects and opens to press and pack to have the increase, especially to thin silicon chip, and this fluting figure battery breakage rate reduces, and the angularity reduces.

Drawings

FIG. 1 is a schematic diagram of a prior art backside passivation film notching configuration;

fig. 2 is a schematic diagram of the back passivation film grooving structure of the present invention.

In the figure: 1 silicon substrate, 2 passivation films, 3 groove lines, 31 horizontal laser grooves, 32 vertical laser grooves, 4 back electrodes and 5 square frame laser grooves.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1-2, the present invention provides a technical solution:

the utility model provides a "Z" word figure fluting structure suitable for thin slice PERC battery, including silicon substrate 1, locate the passive film 2 at the silicon substrate 1 back and locate the fluting line 3 on the passive film 2, the fluting line 3 includes a plurality of horizontal laser grooves 31 that the equidistance was arranged and a plurality of perpendicular laser grooves 32 that the equidistance was arranged, the length of horizontal laser groove 31 and perpendicular laser groove 32 equals, horizontal laser groove 31 and perpendicular laser groove 32 end to end form the fluting of "Z" type structure, many fluting lines 3 have been arranged to passive film 2 surface equidistance.

The purpose of slotting on the back passivation film 2 is that the subsequent printing of back aluminum paste is beneficial to leading out current, reducing contact resistance and obviously improving the efficiency of the battery, wherein the passivation film 2 on the back is a double-layer film structure consisting of aluminum oxide and silicon nitride.

The surface of the passivation film 2 is also provided with back electrodes 4 distributed in an array manner, the back electrodes 4 are in rectangular structures, the rectangular structural arrangement mode of the back electrodes 4 is a 5 multiplied by 4 square matrix, the length of each rectangular structural area is 15-30mm, and the width of each rectangular structural area is 1.2-4 mm.

Because the passivation film 2 on the back is insulated, the horizontal laser groove 31 and the vertical laser groove 32 have the functions of directly contacting the passivated emitter and the PERC aluminum paste of the back local contact battery with the silicon substrate 1, thereby being beneficial to leading out current, reducing contact resistance and increasing open-circuit voltage.

The equidistant line segments of the horizontal laser grooves 31 are distributed at intervals, the vertical distances of the adjacent horizontal laser grooves 31 are equal, and the line segments are distributed at intervals in a staggered way; the equal-distance line segments of the vertical laser grooves 32 are distributed at intervals, the vertical distances of the adjacent vertical laser grooves 32 are equal, the line sections are staggered and distributed at equal intervals, the aluminum paste on the back of the battery is in good contact with the silicon substrate 1, the battery efficiency is slightly improved, the open pressure and the filling are increased, particularly for thin silicon wafers, the breakage rate of the battery with the open groove pattern is reduced, and the warping degree is reduced.

The distance between the line segments of the horizontal laser grooves 31 is 0.5-2.5 mm; the distance between the line segments of the vertical laser grooves 32 is 0.5-2.5mm, which is more beneficial to the conduction and collection of current, reduces the back recombination and increases the open-circuit voltage.

The edge that horizontal laser groove 31 and perpendicular laser groove 32 outside are close to silicon substrate 1 is equipped with square frame laser groove 5 to square frame laser groove 5 contacts with adjacent horizontal laser groove 31 and perpendicular laser groove 32 that are close to, and the current in silicon substrate 1 edge can be favorable to absorbing more in the setting of square frame laser groove 5.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The utility model provides a "Z" word figure fluting structure suitable for thin slice PERC battery, includes silicon substrate (1), locates passive film (2) at the silicon substrate (1) back and locates fluting line (3) on passive film (2), fluting line (3) include horizontal laser groove (31) and the perpendicular laser groove (32) that a plurality of equidistant arranged, its characterized in that: the length of horizontal laser groove (31) and perpendicular laser groove (32) equals, and horizontal laser groove (31) and perpendicular laser groove (32) end to end form the slotline of "Z" type structure, and many slotlines (3) have been arranged to passive film (2) surface equidistance.

2. The slotted "Z" shaped pattern structure suitable for use in a thin sheet PERC cell of claim 1, wherein: the surface of the passivation film (2) is also provided with back electrodes (4) distributed in an array manner, and the back electrodes (4) are of a rectangular structure.

3. The slotted "Z" shaped pattern structure suitable for use in a thin sheet PERC cell of claim 2, wherein: the rectangular structure arrangement mode of the back electrode (4) is a 5 x 4 square matrix, the length of each rectangular structure area is 15-30mm, and the width is 1.2-4 mm.

4. The slotted "Z" shaped pattern structure suitable for use in a thin sheet PERC cell of claim 1, wherein: the equal-distance line segments of the horizontal laser grooves (31) are distributed at intervals, the vertical distances of the adjacent horizontal laser grooves (31) are equal, and the line sections are distributed at intervals in a staggered way; the equal-distance line segments of the vertical laser grooves (32) are distributed at intervals, the vertical distances of the adjacent vertical laser grooves (32) are equal, and the line sections are distributed at intervals in a staggered mode.

5. The slotted "Z" shaped pattern structure suitable for use in a thin sheet PERC cell of claim 4, wherein: the distance between line segments of the horizontal laser grooves (31) is 0.5-2.5 mm; the distance between the line segments of the vertical laser grooves (32) is 0.5-2.5 mm.

6. The slotted "Z" shaped pattern structure suitable for use in a thin sheet PERC cell of claim 1, wherein: the edge of the outer part of each of the horizontal laser groove (31) and the vertical laser groove (32) close to the silicon substrate (1) is provided with a square frame laser groove (5), and the square frame laser groove (5) is in contact with the adjacent horizontal laser groove (31) and the adjacent vertical laser groove (32).