CN219106162U - Double-sided solar cell - Google Patents
Double-sided solar cell Download PDFInfo
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- CN219106162U CN219106162U CN202222609844.9U CN202222609844U CN219106162U CN 219106162 U CN219106162 U CN 219106162U CN 202222609844 U CN202222609844 U CN 202222609844U CN 219106162 U CN219106162 U CN 219106162U
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Abstract
The utility model discloses a double-sided solar cell, which is characterized in that a first doping layer and a first tunneling layer are sequentially arranged between a first electrode layer and a silicon wafer body, a second doping layer and a second tunneling layer are sequentially arranged between a second electrode layer and the silicon wafer body, the first electrode layer and the second electrode layer both comprise a metal grid electrode and a passivation anti-reflection layer which are formed by sub-grid lines and main grid lines, the sub-grid lines are formed by metal wires and first conductive bonding layers, the first conductive bonding layers positioned on the side surfaces of the metal wires are electrically connected with the first doping layer and the second doping layer, the main grid lines are formed by metal conduction bands and the second conductive bonding layers positioned on the side surfaces of the metal conduction bands and are electrically connected with the first doping layer and the second doping layer. The double-sided solar cell reduces the cost and the harm to the environment and greatly reduces the loss in the current transmission on the basis of fully utilizing sunlight and increasing the power generation capacity of a single cell.
Description
Technical Field
The utility model relates to the technical field of solar power generation, in particular to a double-sided solar cell.
Background
In recent years, with the rapid development of the photovoltaic industry, the markets at home and abroad also put forward higher and higher requirements on the conversion efficiency and the product performance of the solar cells and the photovoltaic modules, which also promotes manufacturers in the industry to actively research new cells, module structures and related processes.
In order to improve the conversion efficiency of the solar cell, a bifacial solar cell is formed, wherein the bifacial solar cell refers to a solar cell which can receive illumination on the front side and the back side of a silicon wafer and generate voltage and current. In the prior art, when the electrode grid line of the screen printed battery is adopted, the adopted conductive paste is silver paste, the silver paste has high manufacturing cost and contains a large amount of organic solvents and the like, and the organic solvents and the like are volatilized by baking in the follow-up process, so that the manufacturing cost of the battery and the environmental pollution are not reduced.
Disclosure of Invention
The utility model aims to provide a double-sided solar cell which reduces cost and harm to environment pollution and greatly reduces loss in current transmission on the basis of fully utilizing sunlight and increasing generated energy.
In order to achieve the above purpose, the utility model adopts the following technical scheme: a bifacial solar cell comprising: the silicon wafer comprises a silicon wafer body, wherein a first electrode layer is arranged on the front surface of the silicon wafer body, a second electrode layer is arranged on the back surface of the silicon wafer body, a first doping layer and a first tunneling layer are sequentially arranged between the first electrode layer and the silicon wafer body, and a second doping layer and a second tunneling layer are sequentially arranged between the second electrode layer and the silicon wafer body;
the first electrode layer and the second electrode layer both comprise metal grids and passivation and antireflection layers, wherein the metal grids are composed of sub-grid lines and main grid lines, the sub-grid lines are arranged at intervals in parallel along a first direction, the main grid lines are arranged at intervals in parallel along a second direction, and the distance between adjacent main grid lines is larger than the distance between adjacent sub-grid lines;
the sub-grid line consists of a metal wire and a first conductive bonding layer, the first conductive bonding layer positioned on the side surface of the metal wire is electrically connected with the first doping layer and the second doping layer, the main grid line consists of a metal conduction band and a second conductive bonding layer, and the second conductive bonding layer positioned on the side surface of the metal conduction band is electrically connected with the first doping layer and the second doping layer.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the first tunneling layer and the second tunneling layer are any one of a silicon dioxide layer, an aluminum oxide layer and a silicon carbide layer.
2. In the above scheme, the silicon wafer body is an N-type or P-type substrate.
3. In the above scheme, the first doped layer is doped with N-type or P-type.
4. In the above scheme, the second doped layer is doped with N-type or P-type.
5. In the above scheme, the metal wire is a copper wire or an aluminum wire, and the metal conduction band is a copper conduction band or an aluminum conduction band.
Due to the application of the technical scheme, compared with the prior art, the utility model has the following advantages:
the double-sided solar cell provided by the utility model has the advantages that the first doping layer and the first tunneling layer are sequentially arranged between the first electrode layer and the silicon wafer body, the second doping layer and the second tunneling layer are sequentially arranged between the second electrode layer and the silicon wafer body, the first electrode layer and the second electrode layer both comprise the metal grid electrode consisting of the sub grid lines and the main grid lines and the passivation anti-reflection layer, sunlight can be more fully utilized through the double-sided structure of the cell, and the generating capacity of a single cell is increased, so that the photovoltaic power generation cost is reduced, and the utilization rate of solar energy is improved; further, the sub-grid lines are arranged at intervals in parallel along the first direction, the main grid lines are arranged at intervals in parallel along the second direction, the distance between the adjacent main grid lines is larger than the distance between the adjacent sub-grid lines, the sub-grid lines are composed of metal wires and first conductive bonding layers, the first conductive bonding layers on the side surfaces of the metal wires are electrically connected with the first doped layers and the second doped layers, the main grid lines are composed of metal conduction bands and second conductive bonding layers, and the second conductive bonding layers on the side surfaces of the metal conduction bands are electrically connected with the first doped layers and the second doped layers, so that the cost and the harm to environmental pollution are reduced, the loss in current transmission is greatly reduced, and the solar energy utilization rate is further improved.
Drawings
FIG. 1 is a schematic diagram of the whole structure of a bifacial solar cell according to the present utility model;
FIG. 2 is a schematic cross-sectional view of the present utility model at position A-A';
FIG. 3 is a schematic cross-sectional view of the present utility model at position B-B'.
In the above figures: 1. a silicon wafer body; 2. a first electrode layer; 3. a second electrode layer; 4. a first doped layer; 5. a first tunneling layer; 6. a second doped layer; 7. a second tunneling layer; 8. a metal gate: 9. passivation antireflection layer; 10. a sub-gate line; 101. a metal wire; 102. a first conductive adhesive layer; 11. a main gate line; 111. a metal conduction band; 112. and a second conductive adhesive layer.
Detailed Description
In the description of this patent, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are based on directions or positional relationships shown in the drawings, are merely for convenience of description and simplification of description, and do not indicate or imply that the apparatus or element in question must have a specific direction, be configured and operated in a specific direction, and thus should not be construed as limiting the utility model; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in this patent will be understood by those of ordinary skill in the art in a specific context.
Example 1: a bifacial solar cell comprising: the silicon wafer comprises a silicon wafer body 1, wherein a first electrode layer 2 is arranged on the front surface of the silicon wafer body 1, and a second electrode layer 3 is arranged on the back surface of the silicon wafer body 1;
a first doping layer 4 and a first tunneling layer 5 are sequentially arranged between the first electrode layer 2 and the silicon wafer body 1, and a second doping layer 6 and a second tunneling layer 7 are sequentially arranged between the second electrode layer 3 and the silicon wafer body 1;
the double-sided structure of the battery can fully utilize sunlight, and the generated energy of a single battery is increased, so that the photovoltaic power generation cost is reduced, and the utilization rate of solar energy is improved.
The first electrode layer 2 and the second electrode layer 3 both comprise a metal grid electrode 8 and a passivation anti-reflection layer 9, wherein the metal grid electrode 8 consists of sub grid lines 10 and main grid lines 11, the sub grid lines 10 are arranged at intervals in parallel along a first direction, the main grid lines 11 are arranged at intervals in parallel along a second direction, and the distance between adjacent main grid lines 11 is larger than the distance between adjacent sub grid lines 10;
the sub-gate line 10 is composed of a metal wire 101 and a first conductive bonding layer 102, the first conductive bonding layer 102 positioned on the side surface of the metal wire 101 is electrically connected with the first doped layer 4 and the second doped layer 6, the main gate line 11 is composed of a metal conduction band 111 and a second conductive bonding layer 112, and the second conductive bonding layer 112 positioned on the side surface of the metal conduction band 111 is electrically connected with the first doped layer 4 and the second doped layer 6.
The first tunneling layer 5 and the second tunneling layer 7 are silicon dioxide layers.
The silicon wafer body 1 is a P-type substrate; the first doped layer 4 is doped with N type; the second doped layer 4 is P-type doped.
The metal wire 101 is a copper wire, and the metal conduction band 111 is a copper conduction band.
The passivation and antireflection layer 9 is a silicon nitride layer.
The first direction and the second direction are perpendicular to each other.
The first conductive adhesive layer and the second conductive adhesive layer are conductive films.
Example 2: a bifacial solar cell comprising: the silicon wafer comprises a silicon wafer body 1, wherein a first electrode layer 2 is arranged on the front surface of the silicon wafer body 1, a second electrode layer 3 is arranged on the back surface of the silicon wafer body 1, a first doping layer 4 and a first tunneling layer 5 are sequentially arranged between the first electrode layer 2 and the silicon wafer body 1, and a second doping layer 6 and a second tunneling layer 7 are sequentially arranged between the second electrode layer 3 and the silicon wafer body 1;
the double-sided structure of the battery can fully utilize sunlight, and the generated energy of a single battery is increased, so that the photovoltaic power generation cost is reduced.
The first electrode layer 2 and the second electrode layer 3 both comprise a metal grid electrode 8 and a passivation anti-reflection layer 9, wherein the metal grid electrode 8 consists of sub grid lines 10 and main grid lines 11, the sub grid lines 10 are arranged at intervals in parallel along a first direction, the main grid lines 11 are arranged at intervals in parallel along a second direction, and the distance between adjacent main grid lines 11 is larger than the distance between adjacent sub grid lines 10;
the sub-gate line 10 is composed of a metal wire 101 and a first conductive bonding layer 102, the first conductive bonding layer 102 positioned on the side surface of the metal wire 101 is electrically connected with the first doped layer 4 and the second doped layer 6, the main gate line 11 is composed of a metal conduction band 111 and a second conductive bonding layer 112, and the second conductive bonding layer 112 positioned on the side surface of the metal conduction band 111 is electrically connected with the first doped layer 4 and the second doped layer 6.
The metal wire 101 is an aluminum wire, and the metal tape 111 is an aluminum tape.
The aluminum wires and the aluminum conduction bands with higher conductivity and higher stability are directly electrically connected with the first doping layer 4 and the second doping layer 6 through the conductive bonding layers, so that the cost and the harm to environmental pollution are reduced, the loss in current transmission is greatly reduced, and the utilization rate of solar energy is further improved.
The first tunneling layer 5 and the second tunneling layer 7 are aluminum oxide layers.
The silicon wafer body 1 is an N-type substrate; the first doped layer 4 is doped with N type; the second doped layer 4 is P-type doped.
The passivation and antireflection layer 9 is a silicon oxynitride layer.
The first conductive adhesive layer and the second conductive adhesive layer are conductive adhesive layers.
When the double-sided solar cell is adopted, the first doping layer and the first tunneling layer are sequentially arranged between the first electrode layer and the silicon wafer body, the second doping layer and the second tunneling layer are sequentially arranged between the second electrode layer and the silicon wafer body, the first electrode layer and the second electrode layer both comprise a metal grid electrode formed by a sub grid line and a main grid line and a passivation anti-reflection layer, sunlight can be more fully utilized through the double-sided structure of the cell, the generating capacity of a single cell is increased, so that the photovoltaic power generation cost is reduced, and the utilization rate of solar energy is improved;
further, the sub-grid lines are arranged at intervals in parallel along the first direction, the main grid lines are arranged at intervals in parallel along the second direction, the distance between the adjacent main grid lines is larger than the distance between the adjacent sub-grid lines, the sub-grid lines are composed of metal wires and first conductive bonding layers, the first conductive bonding layers on the side surfaces of the metal wires are electrically connected with the first doped layers and the second doped layers, the main grid lines are composed of metal conduction bands and second conductive bonding layers, the second conductive bonding layers on the side surfaces of the metal conduction bands are electrically connected with the first doped layers and the second doped layers, and the metal wires with higher conductivity and higher stability are directly electrically connected with the second type doped layers through the conductive bonding layers, so that the cost and the harm to environmental pollution are reduced, the loss in current transmission is greatly reduced, and the solar energy utilization rate is further improved.
The above embodiments are provided to illustrate the technical concept and features of the present utility model and are intended to enable those skilled in the art to understand the content of the present utility model and implement the same, and are not intended to limit the scope of the present utility model. All equivalent changes or modifications made in accordance with the spirit of the present utility model should be construed to be included in the scope of the present utility model.
Claims (6)
1. A bifacial solar cell comprising: silicon chip body (1), its characterized in that: the silicon wafer comprises a silicon wafer body (1), and is characterized in that a first electrode layer (2) is arranged on the front surface of the silicon wafer body (1), a second electrode layer (3) is arranged on the back surface of the silicon wafer body (1), a first doping layer (4) and a first tunneling layer (5) are sequentially arranged between the first electrode layer (2) and the silicon wafer body (1), and a second doping layer (6) and a second tunneling layer (7) are sequentially arranged between the second electrode layer (3) and the silicon wafer body (1);
the first electrode layer (2) and the second electrode layer (3) comprise a metal grid electrode (8) and a passivation anti-reflection layer (9), wherein the metal grid electrode consists of sub grid lines (10) and main grid lines (11), the sub grid lines (10) are arranged at intervals in parallel along a first direction, the main grid lines (11) are arranged at intervals in parallel along a second direction, and the distance between every two adjacent main grid lines (11) is larger than the distance between every two adjacent sub grid lines (10);
the sub-grid line (10) consists of a metal wire (101) and a first conductive bonding layer (102), the first conductive bonding layer (102) positioned on the side surface of the metal wire (101) is electrically connected with the first doped layer (4) and the second doped layer (6), the main grid line (11) consists of a metal conduction band (111) and a second conductive bonding layer (112), and the second conductive bonding layer (112) positioned on the side surface of the metal conduction band (111) is electrically connected with the first doped layer (4) and the second doped layer (6).
2. The bifacial solar cell according to claim 1, characterized in that: the first tunneling layer (5) and the second tunneling layer (7) are any one of a silicon dioxide layer, an aluminum oxide layer and a silicon carbide layer.
3. The bifacial solar cell according to claim 1, characterized in that: the silicon wafer body (1) is an N-type or P-type substrate.
4. The bifacial solar cell according to claim 1, characterized in that: the first doping layer (4) is doped with N type or P type.
5. The bifacial solar cell according to claim 1, characterized in that: the second doping layer (6) is doped with N type or P type.
6. The bifacial solar cell according to claim 1, characterized in that: the metal wire (101) is a copper wire or an aluminum wire, and the metal conduction band (111) is a copper conduction band or an aluminum conduction band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222609844.9U CN219106162U (en) | 2022-09-30 | 2022-09-30 | Double-sided solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222609844.9U CN219106162U (en) | 2022-09-30 | 2022-09-30 | Double-sided solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN219106162U true CN219106162U (en) | 2023-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222609844.9U Active CN219106162U (en) | 2022-09-30 | 2022-09-30 | Double-sided solar cell |
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|---|---|
| CN (1) | CN219106162U (en) |
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- 2022-09-30 CN CN202222609844.9U patent/CN219106162U/en active Active
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