CN108922934B - Double-sided direct-connection solar cell module and preparation method thereof - Google Patents
Double-sided direct-connection solar cell module and preparation method thereof Download PDFInfo
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- CN108922934B CN108922934B CN201810879945.3A CN201810879945A CN108922934B CN 108922934 B CN108922934 B CN 108922934B CN 201810879945 A CN201810879945 A CN 201810879945A CN 108922934 B CN108922934 B CN 108922934B
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- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 238000002161 passivation Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 239000006227 byproduct Substances 0.000 claims description 5
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- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a double-sided direct-connection solar cell module, which comprises at least two solar cells, wherein the solar cells are sequentially stacked and arranged to form a cell string, and the solar cells comprise first solar cells; the first solar cell comprises a first front electrode and a first back electrode, wherein the first front electrode and the first back electrode are both provided with a transverse main grid and a contact, and the contact is arranged at the end part of the transverse main grid; the long sides of adjacent solar cells are overlapped to form surface contact; adjacent solar cells are connected through contacts, conductive adhesive is coated on the contacts, and the solar cells are solidified to form a cell string. Correspondingly, the invention also provides a preparation method of the double-sided direct-connection solar cell module. The invention has simple structure, reduces the line loss of the welding strip and the gap between the battery pieces, reduces the cost, improves the reliability of the battery assembly and improves the photoelectric conversion efficiency.
Description
Technical Field
The invention relates to the field of solar cells, in particular to a double-sided direct-connection solar cell module and a preparation method thereof.
Background
The traditional crystalline silicon component battery pieces are basically connected by adopting metal welding strips. This connection has three relatively obvious drawbacks: firstly, the gaps between the metal welding strips and the battery pieces occupy the light receiving area of the front surface of the assembly; secondly, the metal welding strip has line loss; and thirdly, the welding strip is easy to break and corrode due to thermal expansion and contraction in a temperature change period, and the three modes have great influence on the conversion efficiency and the performance stability of the assembly.
Disclosure of Invention
The invention aims to solve the technical problem of providing a double-sided direct-connected solar cell module, which has a simple structure, reduces the line loss of a welding strip and the gap between cell pieces, reduces the cost, improves the reliability of the cell module and improves the photoelectric conversion efficiency.
The invention also aims to solve the technical problems of providing the preparation method of the double-sided direct-connection solar cell module, which reduces the line loss of the welding strip and the gaps between the cell pieces, has simple process flow, lower cost, easy popularization, high reliability of the cell module and high photoelectric conversion efficiency.
In order to solve the technical problems, the invention provides a double-sided direct-connection solar cell module, which comprises at least two solar cells, wherein the solar cells are sequentially stacked and arranged to form a cell string, and the solar cells comprise first solar cells;
the first solar cell comprises a first front electrode and a first back electrode, wherein the first front electrode and the first back electrode are both provided with a transverse main grid and a contact, and the contact is arranged at the end part of the transverse main grid;
the long sides of adjacent solar cells are overlapped to form surface contact;
adjacent solar cells are connected through contacts, conductive adhesive is coated on the contacts, and the solar cells are solidified to form a cell string.
As a preferable mode of the above scheme, the solar cell is a pretreated whole silicon wafer.
As a preferable mode of the above-described aspect, the processing sequentially includes: and forming a suede on the front side and the back side of the whole silicon wafer, forming PN junctions by diffusion, doping, polishing the back side, depositing passivation films on the front side and the back side, grooving the back side, printing a front electrode and a back electrode, sintering, resisting LID annealing and carrying out grading test.
As a preferable mode of the scheme, the front transverse main grid and the back transverse main grid of the first solar cell are provided with contacts, and the contacts are arranged at the end parts of the transverse front main grids;
the contact of the front transverse main grid of each solar cell is arranged on the back of the front solar cell and is connected with the contact of the back transverse main grid of the front solar cell.
As a preferable mode of the above scheme, the contact is a circular contact, a rectangular contact, a regular polygon contact or a linear contact.
As a preferable mode of the above scheme, the solar cell further comprises a second solar cell, the second solar cell comprises a second front electrode and a second back electrode, the second front electrode and the second back electrode are both provided with transverse main grids, at least one of the second front electrode and the second back electrode is provided with a longitudinal main grid, and the longitudinal main grid is connected with the transverse main grid.
As a preferable mode of the above-mentioned aspect, the solar cell sheet includes a second solar cell sheet a, a second solar cell sheet B, and a first solar cell sheet;
the front electrode of the second solar cell A comprises a plurality of transverse front main grids, 1 longitudinal front main grid and a plurality of front auxiliary grids, and the back electrode comprises a plurality of transverse back main grids, contacts arranged at the end parts of the transverse back main grids and a plurality of back auxiliary grids;
the front electrode of the second solar cell B comprises a plurality of transverse front main grids, contacts arranged at the end parts of the transverse front main grids and a plurality of front auxiliary grids, and the back electrode comprises a plurality of transverse back main grids, 1 longitudinal back main grid and a plurality of back auxiliary grids;
the front electrode of the first solar cell comprises a plurality of transverse front main grids, contacts arranged at the end parts of the transverse front main grids and a plurality of front auxiliary grids, and the back electrode comprises a plurality of transverse back main grids, contacts arranged at the end parts of the transverse back main grids and a plurality of back auxiliary grids;
the second solar cell A, the first solar cell and the second solar cell B are sequentially stacked and connected.
As a preferred form of the above, the contact has a width at least 20% greater than the width of the lateral main gate.
Correspondingly, the invention also discloses a preparation method of the double-sided direct-connection solar cell module, which comprises the following steps:
(1) Preprocessing a silicon wafer, printing a front electrode and a back electrode on the surface of the silicon wafer, and drying to obtain a solar cell;
(2) Sintering the solar cell at high temperature to solidify the slurry;
(3) Performing LID resistance annealing on the solar cell, and performing grading test;
(4) Printing conductive adhesive on the contact;
(5) Stacking solar cells one by one along the side where the contacts are positioned, and connecting adjacent solar cell contacts to form a cell string;
(6) And heating and curing the battery strings, and packaging the battery strings into a double-sided direct-connection assembly.
As a preferable mode of the above scheme, the pretreatment of the silicon wafer comprises:
(1.1) forming texture surfaces on the front surface and the back surface of the silicon wafer;
(1.2) performing high-square-resistance diffusion on the front surface of the silicon wafer to form a PN junction;
(1.3) carrying out selective laser doping on the front surface of the silicon wafer;
(1.4) removing byproducts and peripheral PN junctions formed in the diffusion process, and polishing the back surface of the silicon wafer;
(1.5) depositing a passivation film and a protective film on the back surface of the silicon wafer;
(1.6) depositing a passivation film and an antireflection film on the front surface of the silicon wafer;
and (1.7) carrying out laser grooving on the passivation film and the protection film on the back surface of the silicon wafer.
The implementation of the invention has the following beneficial effects:
the invention provides a double-sided direct-connection solar cell module, which comprises at least two solar cell pieces, wherein each solar cell piece is a whole piece of silicon wafer after being processed, and long sides of adjacent solar cell pieces are overlapped to form surface contact; and adjacent solar cells are connected through the contact, and through coating conductive adhesive on the contact, form the battery string through solidification, have following advantage:
1. the solar cells in the battery string are directly connected with the anode and the cathode of the adjacent cells through conductive adhesive, so that the consumption of the welding strips is greatly reduced, gaps are not formed among the cells, the usable area of the surface of the assembly is fully utilized, the line loss of the traditional metal welding strips is reduced, and the conversion efficiency of the assembly is greatly improved;
2. the adjacent whole sheets are connected through the contact and the conductive adhesive, so that the manufacturing flow of the double-sided assembly is greatly simplified, and the equipment cost and the production cost are reduced;
3. the adjacent whole sheets are connected through the contact and the conductive adhesive, so that the series resistance and the resistance loss in the assembly are reduced, and the power of the double-sided assembly is obviously improved;
4. according to the invention, the conductive adhesive is coated on the contacts between the adjacent whole sheets, and the battery strings are formed by curing, so that the process flow is simple, and the cost is reduced;
5. the process flow is simple, each process step is mature, and the process is integrated into the common solar cell manufacturing process, so that the error probability in the manufacturing process is reduced, and the reliability of the product is improved;
6. the traditional metal welding strip connection mode is wire connection, and the assembly is surface connection, so that the connection force between the battery pieces is effectively improved, and the assembly is more reliable.
Drawings
FIG. 1 is a schematic front view of a first solar cell of the present invention;
FIG. 2 is a schematic view of the back structure of a first solar cell of the present invention;
FIG. 3 is a schematic illustration of a first embodiment of a double sided direct connection assembly of the present invention during lamination;
FIG. 4 is a schematic front view of a first embodiment of a double-sided direct connection assembly of the present invention;
FIG. 5 is a schematic view of the back structure of a first embodiment of a double-sided direct connection assembly of the present invention;
FIG. 6 is a cross-sectional view of the double-sided direct-connect assembly shown in FIG. 3;
fig. 7 is a schematic front view of a second solar cell a according to the present invention;
fig. 8 is a schematic view showing the back structure of a second solar cell a according to the present invention;
fig. 9 is a schematic front view of a second solar cell B according to the present invention;
fig. 10 is a schematic view showing the back structure of a second solar cell B according to the present invention;
FIG. 11 is a schematic illustration of a second embodiment of a double sided direct connection assembly of the present invention during lamination;
FIG. 12 is a schematic elevational view of a second embodiment of a double-sided direct connection assembly of the present invention;
FIG. 13 is a schematic view of the back structure of a second embodiment of a double-sided direct connection assembly of the present invention;
FIG. 14 is a cross-sectional view of a second embodiment of a double-sided direct connection assembly of the present invention;
fig. 15 is a flowchart of a method of fabricating a double-sided direct solar cell module of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings, for the purpose of making the objects, technical solutions and advantages of the present invention more apparent.
The invention provides a double-sided direct-connected solar cell module, which comprises at least two solar cells, wherein the solar cells are sequentially stacked and arranged to form a cell string. The solar cell provided by the invention at least comprises a first solar cell.
As shown in fig. 1 and 2, the first solar cell 1A includes a first front electrode and a first back electrode, where the first front electrode and the first back electrode are both provided with a transverse main grid and a contact, and the contact is disposed at an end of the transverse main grid.
Specifically, the front electrode of the first solar cell 1A includes a plurality of lateral front main grids 11, contacts 111 disposed at the ends of the lateral front main grids 11, and a plurality of front auxiliary grids 13; the back electrode includes a plurality of lateral back main gates 14, contacts 111 provided at the ends of the lateral back main gates 14, and a plurality of back sub-gates 16.
Preferably, the contact 111 is a circular contact, a rectangular contact, a regular polygon contact, or a linear contact. The linear contact may comprise a variety of forms of linear shape, such as straight, curved, arcuate, etc.
It should be noted that the contact may be configured in other shapes besides the above-mentioned shape, such as diamond, semicircle, or other irregular shapes, and the embodiment thereof is not limited to the embodiment of the present invention.
It should be noted that the main gate and the auxiliary gate of the present invention may be in the form of a straight line, a segment, a curve, etc., and the laser cutting line may be a straight line or a curve, and is not limited thereto. In addition to the main grid and the auxiliary grid, the invention can be provided with spines, and the solar cell module has various embodiments, and the embodiments of the invention are not limited to the examples.
As shown in fig. 3, in the stacking arrangement process, adjacent solar cells 1 are connected through contacts 111, and the contacts 111 of the front transverse main grid of each solar cell 1 are arranged on the back surface of the previous solar cell 1 and are connected with the contacts of the transverse back main grid 14 of the previous solar cell 1. As shown in fig. 4, 5, and 6, the long sides of adjacent solar cells 1 overlap to form surface contacts 20; adjacent solar cells 1 are connected by contacts 111, and a cell string 10 is formed by applying a conductive paste on the contacts 111 and curing.
The whole silicon wafers in the industry are equal in length and width and are 156+/-2 mm in size, and the invention adopts the whole silicon wafers to laminate, is simple and convenient, and has high production efficiency.
The adjacent whole sheets are connected through the contact and the conductive adhesive, so that the manufacturing flow of the double-sided assembly is greatly simplified, and the equipment cost and the production cost are reduced;
the adjacent whole sheets are connected through the contact and the conductive adhesive, so that series resistance and resistance loss are reduced, and the power of the double-sided assembly is obviously improved;
according to the invention, the conductive adhesive is coated on the contacts between the adjacent whole sheets, and the battery strings are formed by curing, so that the process flow is simple, and the cost is reduced.
The cell strings 10 of the present invention may be arranged in one or more rows of cell strings, with the solar cells 1 of each row of cell strings 10 being connected in series. When the cell strings 10 are arranged in a plurality of rows, the solar cells 1 of the single row of cell strings 10 are connected in series; the different rows of battery strings 10 are connected in parallel or in other manners, and the connection manners are various, and the present invention is not limited thereto. Preferably, the different rows of battery strings 10 are connected in parallel or in series by solder strips.
In each row of battery strings, solar cells are connected in a front-back lamination mode, metal welding strips are not arranged on the surfaces of the solar cells, gaps are not arranged among the cells, the usable area of the surfaces of the components is fully utilized, and the line loss of the traditional metal welding strips is reduced, so that the conversion efficiency of the components is greatly improved;
the traditional metal welding strip connection mode is wire connection, and the assembly is surface connection, so that the connection force between the battery pieces is effectively improved, and the assembly is more reliable.
As shown in fig. 6 to 13, the present invention further provides a second embodiment of the double-sided direct solar cell module, which further includes the second solar cell sheet;
as shown in fig. 7 and 8, and fig. 9 and 10, the second solar cell includes a second front electrode and a second back electrode, where the second front electrode and the second back electrode are both provided with a transverse main grid, at least one of the second front electrode and the second back electrode is provided with a longitudinal main grid, and the longitudinal main grid is connected with the transverse main grid.
Specifically, there are various embodiments of the electrode of the second solar cell, including:
(1) As shown in fig. 7 and 8, the front electrode of the second solar cell 1B includes a plurality of transverse front main grids 11, 1 longitudinal front main grid 12 and a plurality of front auxiliary grids 13, and the back electrode includes a plurality of transverse back main grids 14, contacts 111 provided at the ends of the transverse back main grids 14 and a plurality of back auxiliary grids 16, named as a second solar cell a;
(2) As shown in fig. 9 and 10, the front electrode of the second solar cell 1C includes a plurality of lateral front main grids 11, contacts 111 provided at the ends of the lateral front main grids 11, and a plurality of front sub grids 13, and the rear electrode includes a plurality of lateral rear main grids 14, 1 longitudinal rear main grid 15, and a plurality of rear sub grids 16, which are named as a second solar cell B.
As shown in fig. 11 to 14, the cell string 10 of the present invention may be arranged in one or more rows of cell strings, each row of cell strings including one second solar cell sheet 1B, one or more first solar cell sheets 1A, and one second solar cell sheet 1C, the second solar cell sheet 1B, the first solar cell sheet 1A, and the second solar cell sheet 1C being sequentially stacked. The longitudinal main grids of the second solar cells 1B and 1C serve as the positive and negative electrodes of the cell string.
In the stacking arrangement process, adjacent solar cells 1 are connected through contacts 111, and the contacts 111 of the front electrode of each solar cell 1 are arranged on the back surface of the previous solar cell 1 and are connected with the contacts 111 of the transverse back main grid 14 of the previous solar cell 1. The long sides of adjacent solar cells 1 are overlapped to form surface contact 20; adjacent solar cells 1 are connected by contacts 111, and a cell string 10 is formed by applying a conductive paste on the contacts 111 and curing.
The solar cells 1 of each row of the cell strings 10 are connected in series. When the cell strings 10 are arranged in a plurality of rows, the solar cells 1 of the single row of cell strings 10 are connected in series; the different rows of battery strings 10 are connected in parallel or in other manners, and the connection manners are various, and the present invention is not limited thereto. Preferably, the longitudinal main grids are connected in parallel or in series between the different rows of battery strings 10 through welding strips, so that the connection is simple and the reliability is high.
Further, in connection with the different embodiments shown in fig. 1-14, the solar cell 1 is a whole piece of silicon wafer after being processed. The processing sequentially comprises the following steps: and forming a suede on the front side and the back side of the whole silicon wafer, forming PN junctions by diffusion, doping, polishing the back side, depositing passivation films on the front side and the back side, grooving the back side, printing a front electrode and a back electrode, sintering, resisting LID annealing and carrying out grading test.
According to the invention, the preparation process of the battery strings is integrated into the manufacturing process of the common solar cells, after the sintering step of the common solar cells, the contact points are coated with conductive adhesive, and the battery strings are connected through lamination arrangement and heating solidification. The invention has simple process flow, mature process steps, and is integrated into the common solar cell manufacturing process, thereby reducing the error probability in the manufacturing process and increasing the reliability of the product.
Preferably, the width of the contacts 111 is at least 20% greater than the width of the lateral main gate. When the width of the contact 111 is 20% greater than that of the lateral main gate, the stability of connection of adjacent solar cells through the lateral main gate can be ensured, and the series resistance and resistance loss are reduced. When the width of the contact 111 is greater than a certain proportion, the contact 111 is connected with the contact 111 to form a longitudinal main grid.
More preferably, the width of the contact 111 is 20-50% larger than that of the transverse main grid, so that the stability of the connection of the adjacent solar cells 1 through the transverse main grid can be ensured, the series resistance and the resistance loss are reduced, and the power of the assembly is obviously improved. Moreover, the slurry in the overlapping area can be saved, so that the method can be implemented at lower cost. When the width of the contact is 20-50% greater than the width of the lateral main gate, the series resistance and resistance loss can be reduced by an additional 25% on the premise of the basic scheme of the invention.
Correspondingly, the invention also discloses a preparation method of the double-sided direct-connection solar cell module, which is shown in fig. 15 and comprises the following steps:
s101, preprocessing the silicon wafer, printing a front electrode and a back electrode on the surface of the silicon wafer, and drying to obtain the solar cell.
Specifically, the front electrode and the back electrode are printed on the silicon wafer according to the pattern design of the electrodes.
S102, performing high-temperature sintering on the solar cell to solidify the slurry.
And S103, performing LID annealing resistance on the solar cell, and performing grading test.
After the step test, the batteries with the same gear are packaged into the same component, so that the maximum power output of the component and the stability of power output are ensured.
The anti-LID annealing is referred to as anti-light attenuation annealing.
S104, printing conductive adhesive on the contact.
And S105, stacking and arranging the solar cells one by one along the side where the contacts are positioned, and connecting adjacent solar cell contacts to form a cell string.
S106, heating and curing the battery strings, and packaging the battery strings into a double-sided direct-connection assembly.
Further, the preprocessing includes:
(1.1) forming texture surfaces on the front surface and the back surface of the silicon wafer;
the silicon chip can be P-type silicon or N-type silicon.
(1.2) performing high-square-resistance diffusion on the front surface of the silicon wafer to form a PN junction;
the sheet resistance is generally preferably 80 to 200Ω/≡, but is not limited thereto.
(1.3) carrying out selective laser doping on the front surface of the silicon wafer;
the laser doping pattern needs to correspond to the subsequent front electrode auxiliary grid pattern, and the laser doping pattern is designed by adopting the prior art.
(1.4) removing byproducts and peripheral PN junctions formed in the diffusion process, and polishing the back surface of the silicon wafer;
if phosphorus diffusion is adopted to form N-type silicon on the front surface of the silicon wafer, the byproduct is phosphosilicate glass;
if boron diffusion is adopted to form P-type silicon on the front surface of the silicon wafer, the byproduct is borosilicate glass.
(1.5) depositing a passivation film and a protective film on the back surface of the silicon wafer;
the passivation film is preferably a silicon oxide film, an aluminum oxide film, or a silicon nitride film, and the protective film is preferably a silicon nitride film, a silicon oxynitride film, a silicon oxide film, or a composite film composed of the above films, but is not limited thereto.
(1.6) depositing a passivation film and an antireflection film on the front surface of the silicon wafer;
the passivation film is preferably a silicon dioxide film, an aluminum oxide film or a silicon nitride film; the anti-reflection film is preferably a silicon nitride film or a silicon oxide film, but is not limited thereto.
And (1.7) carrying out laser grooving on the passivation film and the protection film on the back surface of the silicon wafer.
The laser grooving pattern corresponds to the subsequent back side sub-grid line pattern, and is generally linear or line-segment.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted equally without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. The double-sided direct-connected solar cell module comprises at least two solar cells, wherein the solar cells are sequentially stacked and arranged to form a cell string;
the first solar cell comprises a first front electrode and a first back electrode, wherein the first front electrode and the first back electrode are both provided with a transverse main grid and a contact, and the contact is arranged at the end part of the transverse main grid;
the long sides of adjacent solar cells are overlapped to form surface contact;
adjacent solar cells are connected through contacts, conductive adhesive is coated on the contacts, and the solar cells are solidified to form a cell string.
2. The double-sided direct solar cell module of claim 1, wherein the solar cell is a processed monolithic silicon wafer.
3. The bifacial direct solar module according to claim 2, wherein said processing comprises, in order: and forming a suede on the front side and the back side of the whole silicon wafer, forming PN junctions by diffusion, doping, polishing the back side, depositing passivation films on the front side and the back side, grooving the back side, printing a front electrode and a back electrode, sintering, resisting LID annealing and carrying out grading test.
4. The double-sided direct-connection solar cell assembly of claim 1, 2 or 3, wherein contacts are provided on the front-side and back-side lateral primary grids of the first solar cell sheet, the contacts being provided at the ends of the lateral front-side primary grids;
the contact of the front transverse main grid of each solar cell is arranged on the back of the front solar cell and is connected with the contact of the back transverse main grid of the front solar cell.
5. The double-sided direct-connect solar cell assembly of claim 4, wherein the contacts are circular contacts, rectangular contacts, regular polygon contacts, or linear contacts.
6. The double-sided direct-connection solar cell assembly of claim 1, wherein the solar cell further comprises a second solar cell, the second solar cell comprises a second front electrode and a second back electrode, the second front electrode and the second back electrode are both provided with a transverse main grid, at least one of the second front electrode and the second back electrode is provided with a longitudinal main grid, and the longitudinal main grid is connected with the transverse main grid.
7. The double-sided direct solar cell assembly of claim 6, wherein the solar cell sheet comprises a second solar cell sheet a, a second solar cell sheet B, and a first solar cell sheet;
the front electrode of the second solar cell A comprises a plurality of transverse front main grids, 1 longitudinal front main grid and a plurality of front auxiliary grids, and the back electrode comprises a plurality of transverse back main grids, contacts arranged at the end parts of the transverse back main grids and a plurality of back auxiliary grids;
the front electrode of the second solar cell B comprises a plurality of transverse front main grids, contacts arranged at the end parts of the transverse front main grids and a plurality of front auxiliary grids, and the back electrode comprises a plurality of transverse back main grids, 1 longitudinal back main grid and a plurality of back auxiliary grids;
the front electrode of the first solar cell comprises a plurality of transverse front main grids, contacts arranged at the end parts of the transverse front main grids and a plurality of front auxiliary grids, and the back electrode comprises a plurality of transverse back main grids, contacts arranged at the end parts of the transverse back main grids and a plurality of back auxiliary grids;
the second solar cell A, the first solar cell and the second solar cell B are sequentially stacked and connected.
8. The double-sided direct-connect solar cell assembly of claim 1, wherein the width of the contacts is at least 20% greater than the width of the lateral primary grid.
9. A method of making a double-sided direct solar cell module as claimed in any one of claims 1 to 8, comprising:
(1) Preprocessing a silicon wafer, printing a front electrode and a back electrode on the surface of the silicon wafer, and drying to obtain a solar cell;
(2) Sintering the solar cell at high temperature to solidify the slurry;
(3) Performing LID resistance annealing on the solar cell, and performing grading test;
(4) Printing conductive adhesive on the contact;
(5) Stacking solar cells one by one along the side where the contacts are positioned, and connecting adjacent solar cell contacts to form a cell string;
(6) And heating and curing the battery strings, and packaging the battery strings into a double-sided direct-connection assembly.
10. The method for manufacturing a double-sided direct solar cell module according to claim 9, wherein the pretreatment of the silicon wafer comprises:
(1.1) forming texture surfaces on the front surface and the back surface of the silicon wafer;
(1.2) performing high-square-resistance diffusion on the front surface of the silicon wafer to form a PN junction;
(1.3) carrying out selective laser doping on the front surface of the silicon wafer;
(1.4) removing byproducts and peripheral PN junctions formed in the diffusion process, and polishing the back surface of the silicon wafer;
(1.5) depositing a passivation film and a protective film on the back surface of the silicon wafer;
(1.6) depositing a passivation film and an antireflection film on the front surface of the silicon wafer;
and (1.7) carrying out laser grooving on the passivation film and the protection film on the back surface of the silicon wafer.
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| CN106206767A (en) * | 2014-10-31 | 2016-12-07 | 比亚迪股份有限公司 | Solar battery cell, cell piece array, battery component and preparation method thereof |
| CN106298987A (en) * | 2016-09-30 | 2017-01-04 | 晶澳（扬州）太阳能科技有限公司 | A kind of MWT solar module |
| CN206820003U (en) * | 2017-06-06 | 2017-12-29 | 张家港协鑫集成科技有限公司 | Photovoltaic imbrication component |
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| CN106206767A (en) * | 2014-10-31 | 2016-12-07 | 比亚迪股份有限公司 | Solar battery cell, cell piece array, battery component and preparation method thereof |
| CN106298987A (en) * | 2016-09-30 | 2017-01-04 | 晶澳（扬州）太阳能科技有限公司 | A kind of MWT solar module |
| CN206820003U (en) * | 2017-06-06 | 2017-12-29 | 张家港协鑫集成科技有限公司 | Photovoltaic imbrication component |
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