CN109244160A - The direct-connected solar cell module of fragment single side and preparation method - Google Patents
The direct-connected solar cell module of fragment single side and preparation method Download PDFInfo
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- CN109244160A CN109244160A CN201810878322.4A CN201810878322A CN109244160A CN 109244160 A CN109244160 A CN 109244160A CN 201810878322 A CN201810878322 A CN 201810878322A CN 109244160 A CN109244160 A CN 109244160A
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- 239000012634 fragment Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000002002 slurry Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 6
- 239000006227 byproduct Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 238000003854 Surface Print Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 230000011218 segmentation Effects 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 238000004021 metal welding Methods 0.000 description 6
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical group CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of direct-connected solar cell module of fragment single side, including at least two solar battery sheets, solar battery sheet is to pass through pretreated 1/2 or 1/4 silicon wafer；The solar battery sheet includes the first solar battery sheet；First solar battery sheet includes the first front electrode and the first back surface field, and first front electrode, the first back surface field are equipped with lateral main grid and contact, and the contact is set to the end of lateral main grid；The long side of adjacent solar battery sheet is overlapped, and forms face contact；Adjacent solar battery sheet is connected by contact, and by coating conducting resinl, cured formation battery strings on contact.Correspondingly, the present invention also provides a kind of preparation methods of direct-connected solar cell module of fragment single side.Using the present invention, structure is simple, reduces the gap between the use of welding and cell piece, reduces the power loss of component internal, reduces cost, improves the reliability of battery component, improves photoelectric conversion efficiency.
Description
Technical field
The present invention relates to area of solar cell more particularly to a kind of direct-connected solar cell module of fragment single side and its systems
Preparation Method.
Background technique
Conventional crystalline silicon component cell piece all uses metal welding band connection substantially.There are three obvious for this connection type
Defect: first is that metal welding band and cell piece gap occupy the positive light-receiving area of component；Second is that there are line losses for metal welding band；Third is that
Welding is expanded with heat and contract with cold by the temperature change period is easy to happen fracture and corrosion, these three modes are to the transfer efficiency of component and property
Stabilizability has large effect.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of direct-connected solar cell module of fragment single side, structure
Simply, the gap between the use of welding and cell piece is reduced, the power loss of component internal is reduced, reduces cost, improves electricity
The reliability of pond component improves photoelectric conversion efficiency.
The technical problems to be solved by the invention also reside in, and provide a kind of system of direct-connected solar cell module of fragment single side
Preparation Method reduces the gap between the use of welding and cell piece, reduces the power loss of component internal, and process flow is simple,
Cost is relatively low, easy to spread, the high reliablity of battery component, and photoelectric conversion efficiency is high.
In order to solve the above-mentioned technical problems, the present invention provides a kind of direct-connected solar cell modules of fragment single side, including
At least two solar battery sheets, the solar battery sheet stack gradually arrangement, form battery strings, wherein the solar energy
Cell piece is to pass through pretreated 1/2 or 1/4 silicon wafer, and the solar battery sheet includes the first solar battery sheet；
First solar battery sheet include the first front electrode and the first back surface field, first front electrode,
First back surface field is equipped with lateral main grid and contact, and the contact is set to the end of lateral main grid；
The long side of adjacent solar battery sheet is overlapped, and forms face contact；
Adjacent solar battery sheet is connected by contact, and by coating conducting resinl, cured formation electricity on contact
Pond string.
As the preferred embodiment of above scheme, the processing successively includes: to form suede at the positive back side of 1/2 or 1/4 silicon wafer
Face diffuses to form PN junction, doping, polished backside, positive backside deposition passivating film, back side fluting, printing front electrode and back side electricity
Field, sintering, anti-LID annealing, stepping test.
As the preferred embodiment of above scheme, the lateral main grid in the front of first solar battery sheet and the back side are laterally main
Grid are equipped with contact, and the contact is set to the end of lateral front main grid；
The contact of the lateral main grid in front of each solar battery sheet is set to the back side of preceding a piece of solar battery sheet, and preceding
The contact of the back side transverse direction main grid of a piece of solar battery sheet connects.
As the preferred embodiment of above scheme, the contact is circular contact, rectangular contacts, regular polygon contact or linear
Contact.
As the preferred embodiment of above scheme, the solar battery sheet further includes the second solar battery sheet, and second too
Positive energy cell piece includes the second front electrode and the second back surface field, and second front electrode, the second back surface field are equipped with
Lateral main grid, at least one of second front electrode, second back surface field are equipped with longitudinal main grid, the longitudinal direction main grid with
Lateral main grid connection.
As the preferred embodiment of above scheme, the solar battery sheet includes the second solar battery sheet A, second sun
It can cell piece B and the first solar battery sheet；
The front electrode of the second solar battery sheet A include a plurality of lateral front main grid, 1 longitudinal front main grid and
The a plurality of secondary grid in front, back surface field are equipped with a plurality of lateral back side main grid, set on the contact of lateral back side main grid end；
The front electrode of the second solar battery sheet B includes a plurality of lateral front main grid, is set to lateral front main grid
The secondary grid in the contact of end and a plurality of front, back surface field are equipped with a plurality of lateral back side main grid, 1 longitudinal back side main grid；
The front electrode of first solar battery sheet includes a plurality of lateral front main grid, is set to lateral front main grid end
The secondary grid in the contact in portion and a plurality of front, back surface field are equipped with a plurality of lateral back side main grid, the touching set on lateral back side main grid end
Point；
Second solar battery sheet A, the first solar battery sheet, the second solar battery sheet B stack gradually connection.
As the preferred embodiment of above scheme, the width of the contact is at least bigger by 20% than the width of lateral main grid；
The area of the overlapping region of adjacent solar battery sheet is monolithic solar cell piece area
0.5-20%.
Correspondingly, invention additionally discloses a kind of preparation methods of direct-connected solar cell module of fragment single side, comprising:
(1) full wafer silicon wafer is pre-processed, and prints front electrode, back surface field and back side main grid in silicon chip surface,
Drying；
(2) high temperature sintering is carried out to full wafer silicon wafer, makes slurry curing；
(3) anti-LID annealing is carried out to full wafer silicon wafer, and stepping is tested；
(4) full wafer silicon wafer is cut into 1/2 or 1/4, obtains solar battery sheet；
(5) conducting resinl is printed on contact；
(6) by solar battery sheet one by one along the folded arrangement of boundary layer where contact, adjacent solar battery sheet passes through
Contact connection, forms battery strings；
(7) it is heating and curing to battery strings, and is packaged into the direct-connected component of single side.
Correspondingly, invention additionally discloses the preparation methods of another direct-connected solar cell module of fragment single side, comprising:
(1) full wafer silicon wafer is pre-processed, then full wafer silicon wafer is cut into 1/2 or 1/4, obtain solar battery
Piece；
(2) in solar battery sheet surface printing front electrode, back surface field and back side main grid, drying；
(3) high temperature sintering is carried out to solar battery sheet, makes slurry curing；
(4) anti-LID annealing is carried out to solar battery sheet, and stepping is tested；
(5) conducting resinl is printed on contact；
(6) by solar battery sheet one by one along the folded arrangement of boundary layer where contact, adjacent solar battery sheet passes through
Contact connection, forms battery strings；
(7) it is heating and curing to battery strings, and is packaged into the direct-connected component of single side.
As the preferred embodiment of above scheme, silicon wafer is pre-processed, the pretreatment includes:
(1.1) flannelette is formed in front side of silicon wafer；
(1.2) high square resistance diffusion is carried out in front side of silicon wafer, forms PN junction；
(1.3) selective laser doping is carried out to front side of silicon wafer；
(1.4) by-product and periphery P N knot that removal diffusion process is formed, and silicon chip back side is polished；
(1.5) passivating film and protective film are deposited in silicon chip back side；
(1.6) passivating film and antireflective film are deposited in front side of silicon wafer；
(1.7) laser slotting is carried out to the passivating film of silicon chip back side and protective film.
The invention has the following beneficial effects:
The present invention provides a kind of direct-connected solar cell module of fragment single side, including at least two solar battery sheets, institute
Solar battery sheet is stated to pass through pretreated 1/2 or 1/4 silicon wafer, the long side of adjacent solar battery sheet is overlapped, is formed
Face contact；And adjacent solar battery sheet is connected by contact, and by coating conducting resinl, cured formation electricity on contact
Pond string, has the advantage that
1, it is all connected by welding between the cell piece of traditional components, the solar battery sheet inside battery strings of the invention
Between the positive and negative anodes of adjacent cell piece are connected directly by conducting resinl, the dosage of welding is drastically reduced, between cell piece
It is very close to each other, area workable for assembly surface is taken full advantage of, the line loss of conventional metals welding is reduced, therefore is greatly improved
The transfer efficiency of component；
2, the manufacture stream of single sided assemblies is enormously simplified by contact and conductive glue connection between the adjacent fragment of the present invention
Journey reduces equipment cost and production cost；
3, series resistance and resistance loss are reduced, is shown by contact and conductive glue connection between the adjacent fragment of the present invention
Write the power for promoting single sided assemblies；
4, by coating conducting resinl, cured formation battery strings, process flow on contact between the adjacent fragment of the present invention
Simply, cost is reduced；
5, process flow of the invention is relatively simple, and each processing step is all more mature, and incorporates regular solar
In battery manufacturing process, the probability to malfunction in manufacturing process is reduced, the reliability of product is increased；
6, traditional metal welding band connection mode is line connection, and invention components are then face connection, effectively improve electricity
Attachment force between the piece of pond keeps component more reliable.
7, solar battery sheet of the present invention is to pass through pretreated 1/2 or 1/4 silicon wafer (i.e. fragment), with full wafer silicon wafer phase
Than the electric current passed through on fragment is less than the electric current of full wafer, reduces the power loss of component internal, the power of lifting assembly；
And compared with the fragment of common imbrication component, the area of solar battery sheet of the present invention is larger, and stacking quantity is avoided excessively to bring
It is at high cost, stability is poor the problems such as.
Detailed description of the invention
Fig. 1 is the segmentation schematic diagram of the Facad structure of the first solar battery sheet of the invention；
Fig. 2 is the segmentation schematic diagram of the backside structure of the first solar battery sheet of the invention；
Fig. 3 is schematic diagram of the direct-connected component first embodiment of single side of the present invention in lamination process；
Fig. 4 is the positive structure schematic of the direct-connected component first embodiment of single side of the present invention；
Fig. 5 is the structure schematic diagram of the direct-connected component first embodiment of single side of the present invention；
Fig. 6 is the sectional view of the direct-connected component of single side shown in Fig. 3；
Fig. 7 is the segmentation schematic diagram of the Facad structure of the second solar battery sheet A of the present invention；
Fig. 8 is the segmentation schematic diagram of the backside structure of the second solar battery sheet A of the present invention；
Fig. 9 is the segmentation schematic diagram of the Facad structure of the second solar battery sheet B of the present invention；
Figure 10 is the segmentation schematic diagram of the backside structure of the second solar battery sheet B of the present invention；
Figure 11 is schematic diagram of the direct-connected component second embodiment of single side of the present invention in lamination process；
Figure 12 is the positive structure schematic of the direct-connected component second embodiment of single side of the present invention；
Figure 13 is the structure schematic diagram of the direct-connected component second embodiment of single side of the present invention；
Figure 14 is the sectional view of the direct-connected component second embodiment of single side of the present invention；
Figure 15 is the flow chart of the preparation method of the direct-connected solar cell module of fragment single side of the present invention；
Figure 16 is the flow chart of another preparation method of the direct-connected solar cell module of fragment single side of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with attached drawing
Step ground detailed description.
The present invention provides a kind of direct-connected solar cell modules of fragment single side comprising at least two solar batteries
Piece, the solar battery sheet stack gradually arrangement, form battery strings.The solar battery sheet is to pass through pretreated 1/
2 or 1/4 silicon wafer (i.e. fragment), compared with full wafer silicon wafer, the electric current passed through on fragment is less than the electric current of full wafer, reduces component
Internal power loss, the power of lifting assembly；And compared with the fragment of common imbrication component, solar battery sheet of the present invention
Area is larger, avoids the problems such as stacking excessive bring of quantity is at high cost, stability is poor.
Below by taking solar battery sheet is by pretreated 1/4 silicon wafer as an example, the present invention is illustrated in conjunction with Fig. 1-14,
The solar battery sheet includes at least the first solar battery sheet.
As shown in Figure 1, 2, the first solar battery sheet 1A is to pass through pretreated 1/4 silicon wafer, and each first too
Positive energy cell piece 1A includes the first front electrode and the first back surface field, and first front electrode, the first back surface field are all provided with
There are lateral main grid and contact, the contact is set to the end of lateral main grid.
Specifically, the front electrode of the first solar battery sheet 1A includes a plurality of lateral front main grid 11, is set to cross
To the secondary grid 13 in contact 111 and a plurality of front of 11 end of front main grid；Back surface field 16 is equipped with a plurality of 14 He of lateral back side main grid
Set on the contact 111 of lateral 14 end of back side main grid.
Preferably, the contact 111 is circular contact, rectangular contacts, regular polygon contact or linear contact.It is described linear
Contact may include the linear of variform, such as straight line, curve, camber line etc..
It should be noted that the contact may be arranged as other shapes, such as diamond shape in addition to above-mentioned shape, half
Circle or other irregular shapes, embodiment are not limited to illustrated embodiment of the present invention.
It should be noted that main grid of the invention and secondary grid can be the forms such as straight line, segmentation, curve, laser cut line
It is also possible to straight line or curve, and is not limited thereto.Moreover, the present invention is also provided with ridge other than main grid, secondary grid
Bone, the embodiment multiplicity of the solar cell module, embodiment of the present invention are not limited to illustrated embodiment.
As shown in figure 3, the present invention, during arrangement is laminated, adjacent solar battery sheet 1 is connected by contact 111,
The contact 111 of the lateral main grid 11 in front of each solar battery sheet 1 is set to the back side of preceding a piece of solar battery sheet 1, and preceding
The contact 111 of the lateral back side main grid 14 of a piece of solar battery sheet 1 connects.As shown in Fig. 4, Fig. 5, Fig. 6, adjacent solar energy
The long side of cell piece 1 is overlapped, and forms face contact 20；Adjacent solar battery sheet 1 is connected by contact 111, and by touching
Conducting resinl, cured formation battery strings 10 are coated on point 111.
The full wafer silicon wafer of the industry, general length and width are equal, and size is mostly 156 ± 2mm, and the present invention uses full wafer silicon wafer layer
It is folded, simple and convenient, high production efficiency.
By contact and conductive glue connection between the adjacent fragment of the present invention, the manufacturing process of single sided assemblies is enormously simplified,
Reduce equipment cost and production cost；
By contact and conductive glue connection between the adjacent fragment of the present invention, series resistance and resistance loss are reduced, significantly
Promote the power of single sided assemblies；
By coating conducting resinl, cured formation battery strings, process flow letter on contact between the adjacent fragment of the present invention
It is single, reduce cost.
Battery strings 10 of the invention can be set to a row or multi-row battery strings, the solar battery sheet of every row's battery strings 10
Pass through series connection between 1.And when battery strings 10 are set as multiple rows of, lead between the solar battery sheet 1 of single battery strings 10
Cross series connection；By the connection of in parallel or other modes between difference row's battery strings 10, connection type multiplicity, the present invention is not
This is defined.Preferably, it is connected in parallel or series between different row's battery strings 10 by welding.
In every row's battery strings, solar battery sheet is connected by the way of the stacking of front and back, and surface does not have metal welding band, electricity
It is also very close to each other between the piece of pond, area workable for assembly surface is taken full advantage of, reduces the line loss of conventional metals welding, therefore big
Width improves the transfer efficiency of component；
Traditional metal welding band connection mode is line connection, and invention components are then face connection, effectively improve battery
Attachment force between piece keeps component more reliable.
As shown in FIG. 6 to 13, the present invention also provides the second embodiment of the direct-connected solar cell module of fragment single side, this
When further include second solar battery sheet；Second solar battery sheet is to pass through pretreated 1/4 silicon wafer；
As shown in Fig. 7 and Fig. 8, Fig. 9 and Figure 10, second solar battery sheet includes the second front electrode and the second back
Face electric field, second front electrode, the second back surface field are equipped with lateral main grid, second front electrode, second back side
At least one of electric field is equipped with longitudinal main grid, and the longitudinal direction main grid is connect with lateral main grid.
Specifically, there are many embodiments for the electrode of shown second solar battery sheet, comprising:
(1) as shown in Figure 7 and Figure 8, the second solar battery sheet 1B is to pass through pretreated 1/4 silicon wafer, described
The front electrode of second solar battery sheet 1B include the longitudinal front main grids 12 of a plurality of lateral front main grid 11,1 and it is a plurality of just
Face pair grid 13, back surface field 16 are equipped with a plurality of lateral back side main grid 14, set on the contact 111 of lateral 14 end of back side main grid, life
Entitled second solar battery sheet A；
(2) as shown in Figure 9 and Figure 10, the second solar battery sheet 1C is to pass through pretreated 1/4 silicon wafer, described
The front electrode of second solar battery sheet 1C includes a plurality of lateral front main grid 11, the touching set on lateral 11 end of front main grid
The secondary grid 13 of point 111 and a plurality of front, back surface field 16 are equipped with 14,1 longitudinal back side main grids 15 of a plurality of lateral back side main grid, name
For the second solar battery sheet B.
As illustrated in figs. 11-14, battery strings 10 of the invention can be set to a row or multi-row battery strings, every row's battery strings packet
Include a second solar battery sheet 1B, the first solar battery sheet 1A of one or more and second solar battery sheet
1C, the second solar battery sheet 1B, the first solar battery sheet 1A, the second solar battery sheet 1C stack gradually connection.Second
Solar battery sheet 1B, the second solar battery sheet 1C longitudinal main grid be used as battery strings positive and negative anodes.
During arrangement is laminated, adjacent solar battery sheet 1 is connected the present invention by contact 111, each solar energy
The contact 111 of the front electrode of cell piece 1 is set to the back side of preceding a piece of solar battery sheet 1, with preceding a piece of solar battery sheet 1
Lateral back side main grid 14 contact 111 connect.The long side of adjacent solar battery sheet 1 is overlapped, and forms face contact 20；It is adjacent
Solar battery sheet 1 connected by contact 111, and by coating conducting resinl, cured formation battery strings on contact 111
10。
Pass through series connection between the solar battery sheet 1 of every row's battery strings 10.And when battery strings 10 are set as multiple rows of,
Pass through series connection between the solar battery sheet 1 of single battery strings 10；Between difference row's battery strings 10 by it is in parallel or its
He connects mode, and connection type multiplicity, the present invention is defined not to this.Preferably, pass through between different row's battery strings 10
Welding connects longitudinal main grid in parallel or series, and connection is simple, highly reliable.
Further, the difference embodiment in conjunction with shown in Fig. 1-14, the solar battery sheet 1 are after treatment whole
Piece silicon wafer.The processing successively includes: in the positive back side of 1/2 or 1/4 silicon wafer formation flannelette, diffuses to form PN junction, doping, the back side
Polishing, positive backside deposition passivating film, back side fluting, printing front electrode and back surface field, sintering, anti-LID annealing, stepping are surveyed
Examination.
The present invention incorporates the preparation process of battery strings in conventional solar cells manufacturing process, in conventional solar cells
Sintering step after, at contact coat conducting resinl, using stacking arrange, be heating and curing, so that it may realize battery strings
Connection.Process flow of the invention is relatively simple, and each processing step is all more mature, and incorporates conventional solar cells system
During making, the probability to malfunction in manufacturing process is reduced, the reliability of product is increased.
Preferably, the width of the contact 111 is at least bigger by 20% than the width of lateral main grid.When the width of the contact 111
When degree bigger than the width of lateral main grid 20%, it is ensured that adjacent solar battery sheet passes through the connected stabilization of lateral main grid
Property, reduce series resistance and resistance loss.When the width of contact 111 greatly to certain proportion when, contact 111 and contact 111 it
Between be connected, form a longitudinal main grid.
More preferably, the width of the contact 111 is 20-50% bigger than the width of lateral main grid, it is ensured that the adjacent sun
Energy cell piece 1 passes through the connected stability of lateral main grid, reduces series resistance and resistance loss, is obviously improved the function of component
Rate.Moreover, it is also possible to save the slurry of overlapping region, make with the implementation of lower cost.When the width of contact is than lateral main grid
When the big 20-50% of width, series resistance and resistance loss can additionally reduce by 25% under the premise of base case of the present invention.
Correspondingly, invention additionally discloses a kind of preparation methods of direct-connected solar cell module of fragment single side, such as Figure 15 institute
Show, comprising:
S101, full wafer silicon wafer is pre-processed, and prints front electrode, back surface field and back side master in silicon chip surface
Grid, drying.
Specifically, printing front electrode, back surface field and back side main grid in silicon wafer according to the design of electrode.
S102, high temperature sintering is carried out to full wafer silicon wafer, makes slurry curing.
S103, anti-LID annealing is carried out to full wafer silicon wafer, and stepping is tested.
After stepping test, by the cell package of identical gear to the same component, guarantee component Maximum Power Output and
Guarantee the stability of power output.
It should be noted that anti-LID annealing just refers to anti-photoluminescence decaying annealing.
S104, full wafer silicon wafer is cut into 1/2 or 1/4, obtains solar battery sheet.
S105, conducting resinl is printed on contact.
S106, solar battery sheet is arranged along the boundary layer where contact is folded one by one, adjacent solar battery sheet is logical
Contact connection is crossed, battery strings are formed.
S107, it is heating and curing to battery strings, and is packaged into the direct-connected component of single side.
Correspondingly, invention additionally discloses the preparation method of another direct-connected solar cell module of fragment single side, such as Figure 16
It is shown, comprising:
S201, full wafer silicon wafer is pre-processed, then full wafer silicon wafer is cut into 1/2 or 1/4, obtain solar battery
Piece；
S202, in solar battery sheet surface printing front electrode, back surface field and back side main grid, drying；
S203, high temperature sintering is carried out to solar battery sheet, makes slurry curing；
S204, anti-LID annealing is carried out to solar battery sheet, and stepping is tested；
S205, conducting resinl is printed on contact；
S206, solar battery sheet is arranged along the boundary layer where contact is folded one by one, adjacent solar battery sheet is logical
Contact connection is crossed, battery strings are formed；
S207, it is heating and curing to battery strings, and is packaged into the direct-connected component of single side.
Further, described pre-process includes:
(1.1) flannelette is formed in front side of silicon wafer；
The silicon wafer can select P-type silicon or N-type silicon.
(1.2) high square resistance diffusion is carried out in front side of silicon wafer, forms PN junction；
Sheet resistance is generally preferred to 80-200 Ω/, but not limited to this.
(1.3) selective laser doping is carried out to front side of silicon wafer；
Laser doping pattern needs are corresponding with subsequent front electrode pair gate pattern, use prior art design i.e.
It can.
(1.4) by-product and periphery P N knot that removal diffusion process is formed, and silicon chip back side is polished；
N-type silicon is formed in front side of silicon wafer according to phosphorus diffusion, by-product is phosphorosilicate glass；
Front side of silicon wafer is diffused according to boron and forms P-type silicon, and by-product is Pyrex.
(1.5) passivating film and protective film are deposited in silicon chip back side；
The passivating film is preferably silicon dioxide film, di-aluminium trioxide film or silicon nitride film, and protective film preferably nitrogenizes
Silicon fiml, silicon oxynitride film, silicon dioxide film or the composite membrane being made of above-mentioned film, but not limited to this.
(1.6) passivating film and antireflective film are deposited in front side of silicon wafer；
The passivating film is preferably silicon dioxide film, di-aluminium trioxide film or silicon nitride film；The antireflective film is preferably nitrogen
SiClx film or silicon dioxide film, but not limited to this.
(1.7) laser slotting is carried out to the passivating film of silicon chip back side and protective film.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than protects to the present invention
The limitation of range is protected, although the invention is described in detail with reference to the preferred embodiments, those skilled in the art should
Understand, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the essence of technical solution of the present invention
And range.
Claims (10)
1. a kind of direct-connected solar cell module of fragment single side, including at least two solar battery sheets, the solar battery
Piece stacks gradually arrangement, forms battery strings, which is characterized in that the solar battery sheet is to pass through pretreated 1/2 or 1/4
Silicon wafer；
The solar battery sheet includes the first solar battery sheet；
First solar battery sheet includes the first front electrode and the first back surface field, first front electrode, first
Back surface field is equipped with lateral main grid and contact, and the contact is set to the end of lateral main grid；
The long side of adjacent solar battery sheet is overlapped, and forms face contact；
Adjacent solar battery sheet is connected by contact, and by coating conducting resinl, cured formation battery strings on contact.
2. the direct-connected solar cell module of fragment single side as described in claim 1, which is characterized in that the processing successively includes:
In the positive back side of 1/2 or 1/4 silicon wafer formation flannelette, diffuse to form PN junction, doping, polished backside, positive backside deposition passivating film, back
Face fluting, printing front electrode and back surface field, sintering, anti-LID annealing, stepping test.
3. the direct-connected solar cell module of fragment single side as claimed in claim 1 or 2, which is characterized in that first solar energy
The lateral main grid in the front of cell piece and back side transverse direction main grid are equipped with contact, and the contact is set to the end of lateral front main grid；
The contact of the lateral main grid in front of each solar battery sheet is set to the back side of preceding a piece of solar battery sheet, and preceding a piece of
The contact of the back side transverse direction main grid of solar battery sheet connects.
4. the direct-connected solar cell module of fragment single side as claimed in claim 4, which is characterized in that the contact is round touching
Point, rectangular contacts, regular polygon contact or linear contact.
5. the direct-connected solar cell module of fragment single side as described in claim 1, which is characterized in that the solar battery sheet is also
Including the second solar battery sheet, the second solar battery sheet includes the second front electrode and the second back surface field, and described second
Front electrode, the second back surface field are equipped at least one of lateral main grid, second front electrode, the second back surface field
Equipped with longitudinal main grid, the longitudinal direction main grid is connect with lateral main grid.
6. the direct-connected solar cell module of fragment single side as claimed in claim 5, which is characterized in that the solar battery sheet packet
Include the second solar battery sheet A, the second solar battery sheet B and the first solar battery sheet；
The front electrode of the second solar battery sheet A includes a plurality of lateral front main grid, 1 longitudinal front main grid and a plurality of
Positive pair grid, back surface field are equipped with a plurality of lateral back side main grid, set on the contact of lateral back side main grid end；
The front electrode of the second solar battery sheet B includes a plurality of lateral front main grid, is set to lateral front main grid end
Contact and a plurality of secondary grid in front, back surface field be equipped with a plurality of lateral back side main grid, 1 longitudinal back side main grid；
The front electrode of first solar battery sheet includes a plurality of lateral front main grid, set on lateral front main grid end
The secondary grid in contact and a plurality of front, back surface field are equipped with a plurality of lateral back side main grid, set on the contact of lateral back side main grid end；
Second solar battery sheet A, the first solar battery sheet, the second solar battery sheet B stack gradually connection.
7. the direct-connected solar cell module of fragment single side as described in claim 1, which is characterized in that the width of the contact is than horizontal
Width to main grid is at least big by 20%；
The area of the overlapping region of adjacent solar battery sheet is the 0.5-20% of monolithic solar cell piece area.
8. a kind of preparation method of such as described in any item direct-connected solar cell modules of fragment single side of claim 1-7, special
Sign is, comprising:
(1) full wafer silicon wafer is pre-processed, and prints front electrode, back surface field and back side main grid, drying in silicon chip surface；
(2) high temperature sintering is carried out to full wafer silicon wafer, makes slurry curing；
(3) anti-LID annealing is carried out to full wafer silicon wafer, and stepping is tested；
(4) full wafer silicon wafer is cut into 1/2 or 1/4, obtains solar battery sheet；
(5) conducting resinl is printed on contact；
(6) by solar battery sheet one by one along the folded arrangement of boundary layer where contact, adjacent solar battery sheet passes through contact
Connection forms battery strings；
(7) it is heating and curing to battery strings, and is packaged into the direct-connected component of single side.
9. a kind of preparation method of such as described in any item direct-connected solar cell modules of fragment single side of claim 1-7, special
Sign is, comprising:
(1) full wafer silicon wafer is pre-processed, then full wafer silicon wafer is cut into 1/2 or 1/4, obtain solar battery sheet；
(2) in solar battery sheet surface printing front electrode, back surface field and back side main grid, drying；
(3) high temperature sintering is carried out to solar battery sheet, makes slurry curing；
(4) anti-LID annealing is carried out to solar battery sheet, and stepping is tested；
(5) conducting resinl is printed on contact；
(6) by solar battery sheet one by one along the folded arrangement of boundary layer where contact, adjacent solar battery sheet passes through contact
Connection forms battery strings；
(7) it is heating and curing to battery strings, and is packaged into the direct-connected component of single side.
10. the preparation method of the direct-connected solar cell module of fragment single side as described in claim 8 or 9, which is characterized in that silicon
Piece is pre-processed, and the pretreatment includes:
(1.1) flannelette is formed in front side of silicon wafer；
(1.2) high square resistance diffusion is carried out in front side of silicon wafer, forms PN junction；
(1.3) selective laser doping is carried out to front side of silicon wafer；
(1.4) by-product and periphery P N knot that removal diffusion process is formed, and silicon chip back side is polished；
(1.5) passivating film and protective film are deposited in silicon chip back side；
(1.6) passivating film and antireflective film are deposited in front side of silicon wafer；
(1.7) laser slotting is carried out to the passivating film of silicon chip back side and protective film.
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