CN216311798U - Back contact solar cell - Google Patents
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- CN216311798U CN216311798U CN202122442968.8U CN202122442968U CN216311798U CN 216311798 U CN216311798 U CN 216311798U CN 202122442968 U CN202122442968 U CN 202122442968U CN 216311798 U CN216311798 U CN 216311798U
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- 238000002161 passivation Methods 0.000 claims abstract description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 40
- 229920005591 polysilicon Polymers 0.000 claims description 30
- 230000005641 tunneling Effects 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000002131 composite material Substances 0.000 abstract 1
- 230000006798 recombination Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000002028 Biomass Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
Provided is a back contact solar cell, including: a silicon wafer substrate having a front surface and a back surface; the doping layers comprise a first doping region and a second doping region, and are sequentially and alternately arranged on the back surface of the silicon wafer substrate in a straight line manner; the first passivation layer is positioned on the doping layer; the third doped region and the fourth doped region are positioned in the first passivation layer, the third doped region is positioned on the first doped region, and the fourth doped region is positioned on the second doped region; a front surface field layer located on the front surface of the silicon wafer substrate; a second passivation layer on the front surface field layer; and the metal electrode penetrates through the surface of the first passivation layer to form ohmic contact with the third doped region and/or the fourth doped region. The back contact solar cell not only effectively improves the passivation performance of the cell, but also can reduce the metal contact composite loss and the cell series resistance of the cell, improve the filling factor and the open-circuit voltage, and further improve the photoelectric conversion efficiency of the cell.
Description
Technical Field
The utility model belongs to the technical field of solar cells, and particularly relates to a back contact solar cell.
Background
With the global energy problem becoming more prominent, the utilization of renewable resources including solar energy, wind energy, tidal energy, geothermal energy, biomass energy, etc. is receiving much attention, and among them, solar cells have been steadily and continuously developed as an important way of solar energy utilization. In the field of current industrialized solar cells, crystalline silicon solar cells occupy more than 90% of the market space, and with the continuous updating and development of technologies, the monocrystalline silicon solar cells will be continuously carried out in the direction of low cost and high efficiency in the future. Among a plurality of high-efficiency batteries, the mass production efficiency of an N-type Interdigital Back Contact (IBC) monocrystalline silicon battery reaches 24.2%, and the method has a huge development and application space. The positive and negative electrodes of the N-type IBC battery are positioned on the back surface of the battery, and the P + region and the N + region on the back surface are distributed in an interdigital manner.
In the prior art, the back contact solar cell has the problem that the doping concentration of an emitter and a back field region is too high or too low. When the doping concentration of the emitter and the back field area is too high, the surface passivation effect is poor, and the recombination is serious, so that the open-circuit voltage is influenced; when the doping concentration is too low, the contact resistance of the metal electrode is too large, and the filling factor of the battery is influenced; therefore, the prepared solar cell can not ensure the back passivation performance of the cell on the premise of ensuring the contact performance of the emitter region and the back region of the cell with the contact region of the metal electrode and reducing the metal contact recombination loss, thereby improving the cell efficiency.
SUMMERY OF THE UTILITY MODEL
In order to solve the problems in the prior art, the utility model provides a back contact solar cell which is beneficial to ensuring the contact performance of a contact area with a metal electrode, reducing the metal contact recombination loss, improving the back passivation performance of the cell and further improving the photoelectric conversion efficiency.
According to an aspect of an embodiment of the present invention, there is provided a back contact solar cell including: a silicon wafer substrate having a front surface and a back surface;
the doping layer comprises a first doping region and a second doping region, and the first doping region and the second doping region are sequentially and alternately arranged on the back surface of the silicon wafer substrate;
the first passivation layer is positioned on the doping layer;
the third doped region and the fourth doped region are positioned in the first passivation layer; the third doped region is positioned on the first doped region, and the fourth doped region is positioned on the second doped region;
the front surface field layer is positioned on the front surface of the silicon wafer substrate;
a second passivation layer on the front surface field layer;
and the metal electrode penetrates through the surface of the first passivation layer to form ohmic contact with the third doped region and/or the fourth doped region.
In the back contact solar cell provided in the above aspect, the silicon wafer substrate is an N-type silicon wafer substrate or a P-type silicon wafer substrate, and a textured structure is formed on a front surface of the silicon wafer substrate.
In the back contact solar cell provided in the above aspect, the width of the first doped region is 100um to 400um, the junction depth of the first doped region is 0.2um to 0.4um, and the sheet resistance of the first doped region is 200 Ω, sq, to 400 Ω, sq; the width of the second doping area is 600 um-900 um, the junction depth of the second doping area is 0.2 um-0.4 um, and the sheet resistance of the second doping area is 200 omega-400 omega-sq.
In the back contact solar cell provided in the above aspect, the third doped region includes a first tunneling oxide layer and a first doped polysilicon layer that are sequentially stacked; the fourth doped region comprises a second tunneling oxide layer and a second doped polycrystalline silicon layer which are sequentially stacked.
In the back contact solar cell provided in the above aspect, the thicknesses of the first tunneling oxide layer and the second tunneling oxide layer are 1nm to 3 nm; the thickness of the first doped polycrystalline silicon layer and the second doped polycrystalline silicon layer is 50 nm-250 nm.
In the back contact solar cell provided in the above aspect, the area of the third doped region accounts for 10% to 30% of the area of the first doped region, and the distance between the central axis of the third doped region and the central axis of the first doped region is 0um to 20 um; the area in fourth doping area accounts for 10% -30% of the area in second doping area, just the axis in fourth doping area with the distance of the axis in second doping area is 0um ~ 20 um.
In the back contact solar cell provided in the above aspect, the sheet resistance of the front surface field layer is 300 Ω · sq to 500 Ω · sq; the junction depth of the front surface field layer is 0.05 um-0.2 um.
In the back contact solar cell provided in the above aspect, the first passivation layer and the second passivation layer include a silicon nitride layer and a silicon oxynitride layer that are sequentially stacked.
In the back contact solar cell provided in the above aspect, the thickness of the silicon nitride layer is 40nm to 60nm, and the thickness of the silicon oxynitride layer is 10nm to 30 nm.
In the back contact solar cell provided in the above aspect, the metal electrode is a silver electrode, and the metal electrode is in a strip shape.
Has the advantages that: according to the back contact solar cell, the local passivation contact structure is formed on the back surface of the cell, and light doping is carried out in the region without the local passivation contact structure, so that the passivation performance of the cell is effectively improved, the metal contact recombination loss and the series resistance of the cell can be reduced, the filling factor and the open-circuit voltage are improved, and the photoelectric conversion efficiency of the back contact solar cell is improved.
Drawings
The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
fig. 1 is a structural diagram of a back contact solar cell according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a doped region structure of a back contact solar cell in accordance with an embodiment of the present novel concept;
fig. 3 is a schematic diagram of another doped region structure of a back contact solar cell in accordance with an embodiment of the present novel concept.
In the drawing, a second passivation layer 90, a front surface field layer 80, a textured structure 20, a silicon wafer substrate 10, a first doped region 30, a second doped region 40, a first passivation layer 50, a third doped region 60, a first tunneling oxide layer 601, a first doped polysilicon layer 602, a third doped region 70, a second tunneling oxide layer 701, a second doped polysilicon layer 702, and a metal electrode 100.
Detailed Description
In the present invention, the terms "disposed", "provided", "connected", and the like are to be understood in a broad sense. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meanings of the above terms in the present invention can be understood by those of ordinary skill in the art according to specific situations.
The terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in an orientation or positional relationship indicated in the drawings for convenience in describing and simplifying the description, and are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the application.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meanings of these terms in the present invention can be understood by those skilled in the art as appropriate.
In order to solve the technical problems of the back contact solar cell prepared in the prior art as described in the background, a back contact solar cell is provided according to an embodiment of the present invention. The back contact solar cell includes: a silicon wafer substrate having a front surface and a back surface; the doping layer comprises a first doping region and a second doping region, and the first doping region and the second doping region are sequentially, alternately and linearly arranged on the back surface of the silicon wafer substrate; the first passivation layer is positioned on the doping layer; the third doped region and the fourth doped region are positioned in the first passivation layer; the third doped region is positioned on the first doped region, and the fourth doped region is positioned on the second doped region; the front surface field layer is positioned on the front surface of the silicon wafer substrate; a second passivation layer on the front surface field layer; and the metal electrode penetrates through the surface of the first passivation layer to form ohmic contact with the third doped region and/or the fourth doped region.
The back contact solar cell forms a local passivation contact structure on the back surface of the cell, and light doping is carried out in the area of the local passivation contact structure, so that the passivation performance of the cell is effectively improved, the metal contact recombination loss and the series resistance of the cell can be reduced, the filling factor and the open-circuit voltage are improved, and the photoelectric conversion efficiency of the back contact solar cell is improved.
A back contact solar cell according to an embodiment of the present novel implementation will be described in detail below with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a back contact solar cell according to an embodiment of the present invention, and each part of the back contact solar cell provided by the present invention is described in detail with reference to fig. 1.
In one example, a textured structure 20 is formed on the front side of the silicon wafer substrate 10.
The front surface and the back surface of the silicon wafer substrate 10 are two opposite surfaces of the substrate, and the textured structure 20 is formed on the surface of the silicon wafer substrate 10, so that the reflectivity of the surface of the substrate can be reduced, and the incident light utilization rate of the battery is improved.
In one example, the doped layers include a first doped region 30 and a second doped region 40, and the first doped region 30 and the second doped region 40 are alternately arranged on the back surface of the silicon wafer substrate 10 in sequence; the width of the first doped region 30 is 100um to 400um, the junction depth of the first doped region 30 is 0.2um to 0.4um, and the sheet resistance of the first doped region 30 is 200 Ω, sq, to 400 Ω, sq; the width of the second doping area 40 is 600 um-900 um, the junction depth of the second doping area 40 is 0.2 um-0.4 um, and the sheet resistance of the second doping area 40 is 200 Ω -400 Ω -sq.
In one example, the first passivation layer 50 is on the doped layer, and the first passivation layer 50 includes a silicon nitride layer and a silicon oxynitride layer sequentially stacked; wherein the thickness of the silicon nitride layer is 40 nm-60 nm, and the thickness of the silicon oxynitride layer is 10 nm-30 nm.
In one example, the third and fourth doped regions 60, 70 are located within the first passivation layer 50; also, the third doped region 60 is located on the first doped region 30, and the fourth doped region 70 is located on the second doped region 40.
The third doped region 60 includes a first tunneling oxide layer 601 and a first doped polysilicon layer 602 stacked in sequence; the fourth doped region 70 includes a second tunneling oxide layer 701 and a second doped polysilicon layer 702, which are sequentially stacked.
The thicknesses of the first tunneling oxide layer 601 and the second tunneling oxide layer 701 are 1 nm-3 nm; the thickness of the first doped polysilicon layer 602 and the second doped polysilicon layer 702 is 50nm to 250 nm.
The passivation contact technology is to form a passivation contact structure by preparing a tunneling oxide layer and a doped polysilicon layer which are sequentially stacked, so that good surface passivation is provided for a battery, and the contact recombination loss and the resistance loss of a metal electrode can be effectively reduced. But the entire back surface of the cell is not suitable for forming a fully passivated contact structure, since the parasitic absorption of light by the doped polysilicon layer leads to optical losses.
According to the back contact solar cell, the first doping region 30 and/or the second doping region 40 on the back surface of the cell are/is lightly doped, so that the passivation performance of the cell is ensured; a local passivation contact structure is formed in the third doped region 60 and/or the fourth doped region 70 by preparing a tunneling oxide layer and a doped polysilicon layer which are sequentially stacked, so that the metal contact recombination loss and the series resistance of the battery are reduced, and the filling factor and the open-circuit voltage are improved; in addition, the problem that the doped polycrystalline silicon layer influences the surface light absorption of the cell due to the fact that a passivation contact structure is formed on the whole back surface of the cell is avoided, and the photoelectric conversion efficiency of the back contact solar cell is improved.
In one example, the front surface field layer 80 is located on the front side of the silicon wafer substrate 10; the sheet resistance of the front surface field layer 80 is 300 Ω · sq to 500 Ω · sq; the junction depth of the front surface field layer 80 is 0.05um to 0.2 um.
The front surface field layer 80 functions to reduce the surface minority carrier concentration by using the field passivation effect, thereby reducing the surface recombination rate, and simultaneously reducing the series resistance and improving the electron transmission capability.
In one example, the second passivation layer 90 is on the front surface field layer 80, and the second passivation layer 90 includes a silicon nitride layer and a silicon oxynitride layer sequentially stacked; wherein the thickness of the silicon nitride layer is 40 nm-60 nm, and the thickness of the silicon oxynitride layer is 10 nm-30 nm.
The passivation layer is formed, so that the reflectivity of the surface of the substrate is favorably reduced, and the incident light utilization rate of the battery is improved.
In each embodiment of the present invention, the silicon wafer substrate 10 may be an N-type silicon wafer substrate or a P-type silicon wafer substrate, which will be described in detail below.
In one example, when the silicon wafer substrate 10 is an N-type silicon wafer substrate, the first doped region 30 is an N-type doped region, and the second doped region 40 is a P-type doped region; the width of the P-type doped region and the width of the N-type doped region are 9: 1-6: 4;
the first doped polysilicon layer 602 of the third doped region 60 is an N-type doped polysilicon layer, the sheet resistance of the first doped polysilicon layer 602 is 60 Ω, sq-120 Ω, sq, and the junction depth of the first doped polysilicon layer 602 is 0.2 um-0.5 um; the second doped polysilicon layer 702 of the fourth doped region 70 is a P-type doped polysilicon layer, the sheet resistance of the second doped polysilicon layer 702 is 20 Ω, sq-80 Ω, sq, and the junction depth of the second doped polysilicon layer 702 is 0.3 um-0.6 um;
the front surface field layer 80 is a phosphorus doped layer.
In another example, when the silicon wafer substrate 10 is a P-type silicon wafer substrate 10, the first doped region 30 is a P-type doped region, and the second doped region 40 is an N-type doped region; the width of the N-type doped region and the width of the P-type doped region are 9: 1-6: 4;
the first doped polysilicon layer 602 of the third doped region 60 is a P-type doped polysilicon layer, the sheet resistance of the first doped polysilicon layer 602 is 20 Ω, sq-80 Ω, sq, and the junction depth of the first doped polysilicon layer 602 is 0.3 um-0.6 um; the second doped polysilicon layer 702 of the fourth doped region 70 is an N-type doped polysilicon layer, the sheet resistance of the second doped polysilicon layer 702 is 60 Ω, sq-120 Ω, sq, and the junction depth of the second doped polysilicon layer 702 is 0.2 um-0.5 um;
the front surface field layer 80 is a boron doped layer.
Fig. 2 is a schematic structural diagram of a doped region of a back contact solar cell according to an embodiment of the present invention, and in fig. 2, only a first doped region 30, a second doped region 40, a third doped region 60, and a fourth doped region 70 of the back contact solar cell are shown, and for convenience of illustration, the rest parts are not shown. Fig. 3 is a schematic structural diagram of another doped region of a back contact solar cell according to an embodiment of the present application, and in fig. 3, only a first doped region 30, a second doped region 40, a third doped region 60, and a fourth doped region 70 of the back contact solar cell are shown, and for convenience of illustration, the rest parts are not shown.
Referring to fig. 2, the third doped region 60 and the fourth doped region 70 have a shape of a stripe having the same length as the first doped region 30 and/or the second doped region 40; referring to fig. 3, the third doped region 60 and the fourth doped region 70 include a plurality of dots equidistantly disposed along the length of the first doped region 30, and/or the second doped region 40.
In this embodiment, the area of the third doped region 60 accounts for 10% to 30% of the area of the first doped region 30, and the distance between the central axis of the third doped region 60 and the central axis of the first doped region 30 is 0um to 20 um; the area of fourth doped region 70 accounts for 10% -30% of the area of second doped region 40, just the axis of fourth doped region 70 with the distance of the axis of second doped region 40 is 0um ~ 20 um.
The third doped region is located at the center of the first doped region as much as possible, and the fourth doped region is located at the center of the second doped region as much as possible, so that the accuracy of the subsequent preparation of the battery is guaranteed.
In one example, the metal electrode 100 is a silver electrode, and the metal electrode 100 penetrates through the surface of the first passivation layer 50 to form an ohmic contact with the third doped region 60 and/or the fourth doped region 70.
The shape of the metal electrode 100 is a strip, and the metal electrode 100 does not exceed the area of the third doped region 60 and/or the fourth doped region 70, so as to ensure that the metal electrode 100 and the doped polysilicon layer of the third doped region 60 and/or the fourth doped region 70 completely form ohmic contact.
The metal electrode 100 includes a metal positive electrode and a metal negative electrode; the metal positive electrode and the P-type doped polycrystalline silicon layer form ohmic contact, and the metal negative electrode and the N-type doped polycrystalline silicon layer form ohmic contact.
In summary, the back contact solar cell according to the embodiment of the utility model includes: the semiconductor device comprises a second passivation layer 90, a front surface field layer 80, a textured structure 20, a silicon wafer substrate 10, a first doped region 30, a second doped region 40, a first passivation layer 50, a third doped region 60, a first tunneling oxide layer 601, a first doped polysilicon layer 602, a third doped region 70, a second tunneling oxide layer 701, a second doped polysilicon layer 702 and a metal electrode 100.
According to the back contact solar cell, the local passivation contact structure is formed on the back surface of the cell, and light doping is carried out in the region except the local passivation contact structure, so that the passivation performance of the cell is effectively improved, the metal contact recombination loss and the cell series resistance of the cell can be reduced, the filling factor and the open-circuit voltage are improved, in addition, the problem that the surface light absorption of the cell is influenced by a doped polycrystalline silicon layer due to the fact that the passivation contact structure is completely formed on the whole back surface of the cell is avoided, and finally the photoelectric conversion efficiency of the back contact solar cell is improved.
The foregoing description has described certain embodiments of this invention. Other embodiments are within the scope of the following claims.
Alternative embodiments of the present invention are described in detail with reference to the drawings, however, the embodiments of the present invention are not limited to the specific details in the above embodiments, and within the technical idea of the embodiments of the present invention, many simple modifications may be made to the technical solution of the embodiments of the present invention, and these simple modifications all belong to the protection scope of the embodiments of the present invention.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the scope of the disclosure. Thus, the description is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A back contact solar cell, comprising:
a silicon wafer substrate having a front surface and a back surface;
the doping layer comprises a first doping region and a second doping region, and the first doping region and the second doping region are sequentially and alternately arranged on the back surface of the silicon wafer substrate;
the first passivation layer is positioned on the doping layer;
the third doped region and the fourth doped region are positioned in the first passivation layer; the third doped region is positioned on the first doped region, and the fourth doped region is positioned on the second doped region;
the front surface field layer is positioned on the front surface of the silicon wafer substrate;
a second passivation layer on the front surface field layer;
and the metal electrode penetrates through the surface of the first passivation layer to form ohmic contact with the third doped region and/or the fourth doped region.
2. The back-contact solar cell of claim 1, wherein the silicon wafer substrate is an N-type silicon wafer substrate or a P-type silicon wafer substrate, and a textured structure is formed on the front side of the silicon wafer substrate.
3. The back contact solar cell of claim 1, wherein the width of the first doped region is 100-400 um, the junction depth of the first doped region is 0.2-0.4 um, and the sheet resistance of the first doped region is 200-400 Ω · sq; the width of the second doping area is 600 um-900 um, the junction depth of the second doping area is 0.2 um-0.4 um, and the sheet resistance of the second doping area is 200 omega-400 omega-sq.
4. The back contact solar cell of claim 1, wherein the third doped region comprises a first tunneling oxide layer and a first doped polysilicon layer stacked in sequence; the fourth doped region comprises a second tunneling oxide layer and a second doped polycrystalline silicon layer which are sequentially stacked.
5. The back-contact solar cell of claim 4, wherein the first and second tunnel oxide layers have a thickness of 1nm to 3 nm; the thickness of the first doped polycrystalline silicon layer and the second doped polycrystalline silicon layer is 50 nm-250 nm.
6. The back-contact solar cell of any one of claims 1 to 5, wherein the area of the third doped region accounts for 10 to 30 percent of the area of the first doped region, and the distance between the central axis of the third doped region and the central axis of the first doped region is 0 to 20 um; the area in fourth doping area accounts for 10% -30% of the area in second doping area, just the axis in fourth doping area with the distance of the axis in second doping area is 0um ~ 20 um.
7. The back contact solar cell of claim 1, wherein the sheet resistance of the front surface field layer is from 300 Ω. sq to 500 Ω. sq; the junction depth of the front surface field layer is 0.05 um-0.2 um.
8. The back contact solar cell of claim 1, wherein the first passivation layer and the second passivation layer comprise a silicon nitride layer and a silicon oxynitride layer stacked in this order.
9. The back contact solar cell of claim 8, wherein the silicon nitride layer has a thickness of 40nm to 60nm and the silicon oxynitride layer has a thickness of 10nm to 30 nm.
10. The back contact solar cell of claim 1, wherein the metal electrode is a silver electrode, and the metal electrode is in the shape of a strip.
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| CN202122442968.8U CN216311798U (en) | 2021-10-11 | 2021-10-11 | Back contact solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115458617A (en) * | 2022-11-04 | 2022-12-09 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
| CN117253934A (en) * | 2023-11-20 | 2023-12-19 | 隆基绿能科技股份有限公司 | Back contact battery and photovoltaic module |
| WO2024000399A1 (en) * | 2022-06-30 | 2024-01-04 | 横店集团东磁股份有限公司 | Solar cell structure and manufacturing method therefor |
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2021
- 2021-10-11 CN CN202122442968.8U patent/CN216311798U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024000399A1 (en) * | 2022-06-30 | 2024-01-04 | 横店集团东磁股份有限公司 | Solar cell structure and manufacturing method therefor |
| CN115458617A (en) * | 2022-11-04 | 2022-12-09 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
| CN117253934A (en) * | 2023-11-20 | 2023-12-19 | 隆基绿能科技股份有限公司 | Back contact battery and photovoltaic module |
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