CN218730969U

CN218730969U - Photovoltaic cell

Info

Publication number: CN218730969U
Application number: CN202222608904.5U
Authority: CN
Inventors: 刘泽江
Original assignee: Hefei Yuandun Sensor Technology Co ltd
Current assignee: Hefei Yuandun Sensor Technology Co ltd
Priority date: 2022-09-30
Filing date: 2022-09-30
Publication date: 2023-03-24
Anticipated expiration: 2032-09-30

Abstract

The utility model discloses a photovoltaic cell, include: the silicon wafer comprises a first-type doped silicon wafer body and a second-type doped layer positioned on the upper portion of the silicon wafer body, wherein a plurality of sub-grid lines are arranged on the surface, back to the silicon wafer body, of the second-type doped layer in parallel at intervals along a first direction, a plurality of main grid lines are arranged in parallel at intervals along a second direction, and the distance between every two adjacent main grid lines is greater than that between every two adjacent sub-grid lines; the sub-grid line consists of a metal wire and a first conductive adhesive layer, the first conductive adhesive layer positioned on the side surface of the metal wire is electrically connected with the second type doping layer, the main grid line consists of a metal conduction band and a second conductive adhesive layer, and the second conductive adhesive layer positioned on the side surface of the metal conduction band is electrically connected with the second type doping layer. The utility model discloses photovoltaic cell both reduced the cost and to environmental pollution's harm, again greatly reduced the loss in the current transmission to further improved the utilization ratio of solar energy.

Description

Photovoltaic cell

Technical Field

The utility model relates to a solar energy power generation's technical field specifically is a photovoltaic cell.

Background

With the rising of energy price and the increasing requirement on environment, solar energy has the advantages of no pollution, no regional limitation, inexhaustibility and the like, and the research on solar power generation becomes a main direction for developing and utilizing new energy. Solar cells are a major way to generate electricity using solar energy today. In the solar cell, the sub-grid lines are connected with the silicon wafer to realize current collection, then are transmitted to the main grid lines, and finally are led out through the electrodes. In the prior art, when the electrode grid line of the screen printing battery is adopted, the adopted conductive paste is silver paste, the manufacturing cost of the silver paste is high, the silver paste contains a large amount of organic solvents and the like, and the organic solvents and the like are volatilized by baking in the follow-up process, so that the battery manufacturing cost is not reduced, and the environmental pollution is not reduced.

Disclosure of Invention

The utility model aims at providing a photovoltaic cell, this photovoltaic cell both the cost is reduced and to environmental pollution's harm, again greatly reduced the loss among the current transmission to further improve the utilization ratio of solar energy.

In order to achieve the above purpose, the utility model adopts the technical scheme that: a photovoltaic cell, comprising: the silicon chip comprises a first-type doped silicon chip body and a second-type doped layer positioned on the upper part of the silicon chip body, wherein the bottom surface of the silicon chip body is provided with a back electrode; the surface of the second-type doping layer, back to the silicon wafer body, is provided with a plurality of sub-grid lines at intervals in parallel along a first direction, a plurality of main grid lines at intervals in parallel along a second direction, and the distance between every two adjacent main grid lines is greater than that of the adjacent sub-grid lines;

the sub-grid lines are composed of metal wires and first conductive bonding layers, the first conductive bonding layers located on the side surfaces of the metal wires are electrically connected with the second type doping layer, the main grid lines are composed of metal conduction bands and second conductive bonding layers, and the second conductive bonding layers located on the side surfaces of the metal conduction bands are electrically connected with the second type doping layer.

The further improved scheme in the technical scheme is as follows:

1. in the above scheme, an antireflection film covers a region of the second-type doping layer between the sub-gate line and the main gate line.

2. In the above scheme, the second type doped layer is an N type doped layer or a P type doped layer.

3. In the above scheme, the silicon wafer body is a P-type doped silicon wafer body or an N-type doped silicon wafer body.

4. In the above scheme, the first direction and the second direction are arranged vertically.

5. In the above scheme, the metal wire is a copper wire or an aluminum wire, and the metal conduction band is a copper conduction band or an aluminum conduction band.

Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:

the utility model discloses photovoltaic cell, its sub-grid line comprises wire and first electrically conductive adhesive linkage, the first electrically conductive adhesive linkage that is located the wire side surface is connected with second type doping layer electricity, the main grid line comprises metal conduction band and the electrically conductive adhesive linkage of second, the electrically conductive adhesive linkage of second that is located the wire side surface is connected with second type doping layer electricity, both the cost is reduced and to environmental pollution's harm, again greatly reduced the loss among the current transmission, thereby further improved the utilization ratio of solar energy.

Drawings

Fig. 1 is a schematic diagram of the overall structure of the photovoltaic cell of the present invention;

FIG. 2 isbase:Sub>A schematic cross-sectional view of the present invention at position A-A';

fig. 3 is a schematic cross-sectional view of the present invention at position B-B'.

In the above drawings: 1. a silicon wafer body; 101. a second type doped layer; 2. a back electrode; 3. a sub-grid line; 31. a metal wire; 32. a first conductive adhesive layer; 4. a main gate line; 41. a metal conduction band; 42. a second conductive adhesive layer; 5. an antireflection film.

Detailed Description

In the description of this patent, it is noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, merely for convenience of description and simplification of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, as they may be fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The meaning of the above terms in this patent may be specifically understood by those of ordinary skill in the art.

Example 1: a photovoltaic cell, comprising: the silicon chip comprises a first-type doped silicon chip body 1 and a second-type doped layer 101 positioned on the upper part of the silicon chip body 1, wherein the bottom surface of the silicon chip body 1 is provided with a back electrode 2; the surface of the second-type doping layer 101, which is opposite to the silicon wafer body 1, is provided with a plurality of sub-grid lines 3 at intervals in parallel along a first direction, a plurality of main grid lines 4 at intervals in parallel along a second direction, and the distance between every two adjacent main grid lines 4 is greater than that between every two adjacent sub-grid lines 3;

the sub-gate line 3 is composed of a copper wire 31 and a first conductive adhesive layer 32, the first conductive adhesive layer 32 on the side surface of the copper wire 31 is electrically connected to the second type doping layer 101, the main gate line 4 is composed of a copper conduction band 41 and a second conductive adhesive layer 42, and the second conductive adhesive layer 42 on the side surface of the copper conduction band 41 is electrically connected to the second type doping layer 101. The copper wire with higher and more stable conductivity is directly and electrically connected with the second type doping layer through the conductive bonding layer, so that the cost and the harm to the environmental pollution are reduced, the loss in current transmission is greatly reduced, and the utilization rate of solar energy is further improved.

The region of the second-type doping layer 101 between the sub-gate line 3 and the main gate line 4 is covered with an anti-reflection film 5.

The second-type doped layer 101 is an N-type doped layer.

The silicon wafer body 1 is a P-type doped silicon wafer body, and the first direction and the second direction are arranged vertically.

The distance between adjacent main grid lines 4 is 5 times the distance between adjacent sub grid lines 3.

Example 2: a photovoltaic cell, comprising: the silicon chip comprises a first-type doped silicon chip body 1 and a second-type doped layer 101 positioned on the upper part of the silicon chip body 1, wherein the bottom surface of the silicon chip body 1 is provided with a back electrode 2; the surface of the second-type doping layer 101, which is opposite to the silicon wafer body 1, is provided with a plurality of sub-grid lines 3 at intervals in parallel along a first direction, a plurality of main grid lines 4 at intervals in parallel along a second direction, and the distance between every two adjacent main grid lines 4 is greater than that between every two adjacent sub-grid lines 3;

the sub-gate line 3 is composed of an aluminum wire 31 and a first conductive adhesive layer 32, the first conductive adhesive layer 32 on the side surface of the aluminum wire 31 is electrically connected to the second type doping layer 101, the main gate line 4 is composed of an aluminum conduction band 41 and a second conductive adhesive layer 42, and the second conductive adhesive layer 42 on the side surface of the aluminum conduction band 41 is electrically connected to the second type doping layer 101. The aluminum wire with higher and more stable conductivity is directly and electrically connected with the second type doping layer through the conductive bonding layer, so that the cost and the harm to the environment pollution are reduced, the loss in current transmission is greatly reduced, and the utilization rate of solar energy is further improved.

The region of the second-type doping layer 101 between the sub-gate line 3 and the main gate line 4 is covered with an antireflection film 5.

The second-type doped layer 101 is a P-type doped layer, and the silicon wafer body 1 is an N-type doped silicon wafer body.

The distance between adjacent main gate lines 4 is 7 times the distance between adjacent sub-gate lines 3.

When the photovoltaic cell is adopted, the sub-grid lines are composed of metal wires and a first conductive bonding layer, the first conductive bonding layer positioned on the side surface of the metal wires is electrically connected with the second type doping layer, the main grid lines are composed of metal conduction bands and a second conductive bonding layer, the second conductive bonding layer positioned on the side surface of the metal conduction band is electrically connected with the second type doping layer, the metal wires with higher and more stable conductivity are directly electrically connected with the second type doping layer through the conductive bonding layers, the cost and the harm to the environment are reduced, the loss in current transmission is greatly reduced, and the utilization rate of solar energy is further improved.

The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.

Claims

1. A photovoltaic cell, comprising: the silicon chip comprises a first-type doped silicon chip body (1) and a second-type doped layer (101) positioned on the upper part of the silicon chip body (1), wherein the bottom surface of the silicon chip body (1) is provided with a back electrode (2); the method is characterized in that: the surface, back to the silicon wafer body (1), of the second-type doping layer (101) is provided with a plurality of sub grid lines (3) at intervals in parallel along a first direction, a plurality of main grid lines (4) at intervals in parallel along a second direction, and the distance between every two adjacent main grid lines (4) is larger than that between every two adjacent sub grid lines (3);

the sub-grid lines (3) are composed of metal wires (31) and first conductive adhesive layers (32), the first conductive adhesive layers (32) located on the side surfaces of the metal wires (31) are electrically connected with the second type doping layer (101), the main grid lines (4) are composed of metal conduction bands (41) and second conductive adhesive layers (42), and the second conductive adhesive layers (42) located on the side surfaces of the metal conduction bands (41) are electrically connected with the second type doping layer (101).

2. The photovoltaic cell of claim 1, wherein: and an antireflection film (5) covers the region of the second-type doping layer (101) between the sub-grid line (3) and the main grid line (4).

3. The photovoltaic cell of claim 1, wherein: the second type doping layer (101) is an N type doping layer or a P type doping layer.

4. The photovoltaic cell of claim 1, wherein: the silicon wafer body (1) is a P-type doped silicon wafer body or an N-type doped silicon wafer body.

5. The photovoltaic cell of claim 1, wherein: the first direction and the second direction are arranged vertically.

6. The photovoltaic cell of claim 1, wherein: the metal lead (31) is a copper lead or an aluminum lead, and the metal conduction band (41) is a copper conduction band or an aluminum conduction band.