CN204577434U - A kind of solar cell - Google Patents
A kind of solar cell Download PDFInfo
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- CN204577434U CN204577434U CN201520347361.3U CN201520347361U CN204577434U CN 204577434 U CN204577434 U CN 204577434U CN 201520347361 U CN201520347361 U CN 201520347361U CN 204577434 U CN204577434 U CN 204577434U
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Abstract
This application discloses a kind of solar cell, comprising: the passivation layer being arranged at the silicon base back side, described passivation layer is provided with multiple window; Be arranged at the H type gate line electrode on described passivation layer, described H type gate line electrode comprises multiple main grid and multiple thin grid, and described main grid is mutually vertical with described thin grid; Be arranged at the conductive layer on described passivation layer, described conductive layer is connected with described H type gate line electrode, and is connected with the described silicon base being positioned at described window.The above-mentioned solar cell that the application provides, can strengthen electric current collection effect, improves the fill factor, curve factor of battery, thus improves the conversion efficiency of solar cell.
Description
Technical field
The utility model relates to technical field of solar cell manufacturing, more particularly, relates to a kind of solar cell.
Background technology
Through technical development in recent years, current many solar cell manufacturers have introduced or have introduced passivating back crystal silicon solar energy battery technology.The Facad structure of passivating back crystal-silicon solar cell is consistent with conventional batteries, the main distinction is the back side: introduce passivation film overleaf, passivation film is after contact window is outputed in local laser stripping, republish aluminium paste/silver slurry, aluminium conductive layer/back silver electrode is formed after sintering, aluminium conductive layer major part covers on passivation film, and fraction forms aluminium silicon by contact window with the silicon base of solar cell and contacts, and back silver electrode all covers on passivation film and do not contact with silicon base.
But, because back silver electrode coverage of the prior art is long-pending less, therefore poor in electrode rear surface regions electric current collection effect, cause the fill factor, curve factor of battery not high enough, thus conversion efficiency of solar cell is not high enough.
Utility model content
For solving the problems of the technologies described above, the utility model provides a kind of solar cell, can strengthen electric current collection effect, improves the fill factor, curve factor of battery, thus improves the conversion efficiency of solar cell.
For achieving the above object, the utility model provides a kind of solar cell, comprising:
Be arranged at the passivation layer at the silicon base back side, described passivation layer is provided with multiple window;
Be arranged at the H type gate line electrode on described passivation layer, described H type gate line electrode comprises multiple main grid and multiple thin grid, and described main grid is mutually vertical with described thin grid;
Be arranged at the conductive layer on described passivation layer, described conductive layer is connected with described H type gate line electrode, and is connected with the described silicon base being positioned at described window.
Preferably, in above-mentioned solar cell, described conductive layer is rafifinal film conductive layer.
Preferably, in above-mentioned solar cell, described H type gate line electrode is copper electrode.
Preferably, in above-mentioned solar cell, described window is that width is at 0.2 millimeter of marking shape window to 0.9 millimeter of scope.
Preferably, in above-mentioned solar cell, the scope of the spacing of adjacent described window is 0.4 millimeter to 1.8 millimeters.
Preferably, in above-mentioned solar cell, the scope of the width of described main grid is 1.2 millimeters to 2 millimeters.
Preferably, in above-mentioned solar cell, described thin grid are arranged between adjacent described window, and the scope of the spacing of adjacent described thin grid is 1.8 millimeters to 3.6 millimeters.
Preferably, in above-mentioned solar cell, the scope of the minimum range between described window and described main grid is 1 millimeter to 2 millimeters.
Preferably, in above-mentioned solar cell, the scope of the thickness of described rafifinal film conductive layer is 150 nanometers to 2 micron.
Preferably, in above-mentioned solar cell, described passivation layer is aluminium oxide/silicon nitride stack thin film passivation layer.
As can be seen from technique scheme, solar cell provided by the utility model is owing to comprising the H type gate line electrode be arranged on described passivation layer, described H type gate line electrode comprises multiple orthogonal main grid and thin grid, therefore, it is possible to increase the area of electric current collection, strengthen electric current collection effect, improve the fill factor, curve factor of battery, thus improve the conversion efficiency of solar cell.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiment of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
The cross sectional representation of a kind of solar cell that Fig. 1 provides for the embodiment of the present application;
The back side partial schematic diagram of a kind of solar cell that Fig. 2 provides for the embodiment of the present application.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
A kind of solar cell that the embodiment of the present application provides as depicted in figs. 1 and 2, the cross sectional representation of a kind of solar cell that Fig. 1 provides for the embodiment of the present application, the back side partial schematic diagram of a kind of solar cell that Fig. 2 provides for the embodiment of the present application.This solar cell comprises:
Be arranged at the passivation layer 2 at silicon base 1 back side, described passivation layer 2 is provided with multiple window 5;
Be arranged at the H type gate line electrode 4 on described passivation layer 2, described H type gate line electrode 4 comprises multiple main grid 41 and multiple thin grid 42, and described main grid 41 is mutually vertical with described thin grid 42;
Be arranged at the conductive layer 3 on described passivation layer 2, described conductive layer 3 is connected with described H type gate line electrode 4, and is connected with the described silicon base 1 being positioned at described window 5.
The above-mentioned solar cell that the embodiment of the present application provides, owing to comprising the H type gate line electrode 4 be arranged on described passivation layer 2, described H type gate line electrode 4 comprises multiple orthogonal main grid 41 and thin grid 42, therefore relative to back silver electrode of the prior art, the area of electric current collection can be increased, strengthen electric current collection effect, improve the fill factor, curve factor of battery, thus improve the conversion efficiency of solar cell.
As a preferred embodiment, in above-mentioned solar cell, described conductive layer is rafifinal film conductive layer.The back silver electrode of existing passivating back crystal-silicon solar cell is segmentation or bypass structure, and silver electrode is connected with aluminium conductive layer, and wherein, aluminium conductive layer is by silk screen printing aluminium paste and formed through high temperature sintering.Aluminium conductive layer inside is a spherical network configuration, the side contacted with passivation film must be caused so more coarse, be unfavorable for the reflection of the light at the back side to silicon base inside, and aluminium paste contains organic substance and a small amount of metal oxide, the aluminium silicon contact zone passivation effect formed by contact window and silicon base after sintering is poor.For solving the problem, in the preferred embodiment, the rafifinal film conductive layer adopted is very smooth, be conducive to strengthening long-wave band light from the back side to the reflection of silicon base inside, the aluminium silicon that rafifinal film conductive layer is formed by contact window and silicon base simultaneously contacts the impact avoiding other impurity, contributes to the passivation effect improving this region.Preferably, the thickness of this conductive layer is 200nm.
As another preferred embodiment, in above-mentioned solar cell, described H type gate line electrode is copper electrode.Used in the prior art is back silver electrode, expends silver more, increases production cost, and the back side H-shaped grid line that the preferred embodiment adopts is copper electrode, just contributes to the production cost reducing solar cell further.
Further, in above-mentioned solar cell, on passivation layer, local has marking shape window, and described window is that width is at 0.2 millimeter of marking shape window to 0.9 millimeter of scope.The effect of this marking shape window forms the contact of aluminium silicon.
Further, in above-mentioned solar cell, the scope of the spacing of adjacent described window is 0.4 millimeter to 1.8 millimeters.
Preferably, in above-mentioned solar cell, the scope of the width of described main grid is 1.2 millimeters to 2 millimeters.
Preferably, in above-mentioned solar cell, described thin grid are arranged between adjacent described window, and the scope of the spacing of adjacent described thin grid is 1.8 millimeters to 3.6 millimeters.
Preferably, in above-mentioned solar cell, the window of described passivation layer disconnects at described main grid place, and the scope of the minimum range between described window and described main grid is 1 millimeter to 2 millimeters.
Preferably, in above-mentioned solar cell, rafifinal film conductive layer covers over the passivation layer, and this rafifinal film conductive layer forms aluminium silicon with silicon base at window place and contacts, and the scope of the thickness of described rafifinal film conductive layer is 150 nanometers to 2 micron.
Preferably, in above-mentioned solar cell, described passivation layer is aluminium oxide/silicon nitride stack thin film passivation layer.
As can be seen from technique scheme, the solar cell that the embodiment of the present application provides is owing to comprising the H type gate line electrode be arranged on described passivation layer, described H type gate line electrode comprises multiple orthogonal main grid and thin grid, therefore, it is possible to increase the area of electric current collection, strengthen electric current collection effect, improve the fill factor, curve factor of battery, thus improve the conversion efficiency of solar cell, and utilize rafifinal film conductive layer can strengthen the reflection toward silicon base inside from the back side of long-wave band light, the aluminium silicon that rafifinal film conductive layer is formed by contact window and silicon base simultaneously contacts the impact avoiding other impurity, contribute to the passivation effect improving this region, in addition, because described H type gate line electrode is copper electrode, therefore, it is possible to reduce production cost further.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the utility model.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein when not departing from spirit or scope of the present utility model, can realize in other embodiments.Therefore, the utility model can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a solar cell, is characterized in that, comprising:
Be arranged at the passivation layer at the silicon base back side, described passivation layer is provided with multiple window;
Be arranged at the H type gate line electrode on described passivation layer, described H type gate line electrode comprises multiple main grid and multiple thin grid, and described main grid is mutually vertical with described thin grid;
Be arranged at the conductive layer on described passivation layer, described conductive layer is connected with described H type gate line electrode, and is connected with the described silicon base being positioned at described window.
2. solar cell according to claim 1, is characterized in that, described conductive layer is rafifinal film conductive layer.
3. solar cell according to claim 1, is characterized in that, described H type gate line electrode is copper electrode.
4. the solar cell according to any one of claim 1-3, is characterized in that, described window is that width is at 0.2 millimeter of marking shape window to 0.9 millimeter of scope.
5. solar cell according to claim 4, is characterized in that, the scope of the spacing of adjacent described window is 0.4 millimeter to 1.8 millimeters.
6. the solar cell according to any one of claim 1-3, is characterized in that, the scope of the width of described main grid is 1.2 millimeters to 2 millimeters.
7. the solar cell according to any one of claim 1-3, is characterized in that, described thin grid are arranged between adjacent described window, and the scope of the spacing of adjacent described thin grid is 1.8 millimeters to 3.6 millimeters.
8. solar cell according to claim 7, is characterized in that, the scope of the minimum range between described window and described main grid is 1 millimeter to 2 millimeters.
9. solar cell according to claim 2, is characterized in that, the scope of the thickness of described rafifinal film conductive layer is 150 nanometers to 2 micron.
10. solar cell according to claim 1, is characterized in that, described passivation layer is aluminium oxide/silicon nitride stack thin film passivation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520347361.3U CN204577434U (en) | 2015-05-26 | 2015-05-26 | A kind of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201520347361.3U CN204577434U (en) | 2015-05-26 | 2015-05-26 | A kind of solar cell |
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| CN204577434U true CN204577434U (en) | 2015-08-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140345A (en) * | 2015-09-10 | 2015-12-09 | 国电新能源技术研究院 | Heterojunction cell and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140345A (en) * | 2015-09-10 | 2015-12-09 | 国电新能源技术研究院 | Heterojunction cell and preparation method thereof |
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