CN207834320U - A kind of crystal silicon solar batteries front electrode main grid structure - Google Patents

A kind of crystal silicon solar batteries front electrode main grid structure Download PDF

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Publication number
CN207834320U
CN207834320U CN201721799528.5U CN201721799528U CN207834320U CN 207834320 U CN207834320 U CN 207834320U CN 201721799528 U CN201721799528 U CN 201721799528U CN 207834320 U CN207834320 U CN 207834320U
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China
Prior art keywords
layer
welding
current collection
main grid
grid structure
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Expired - Fee Related
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CN201721799528.5U
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Chinese (zh)
Inventor
杨永平
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Realforce Power Co Ltd
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Realforce Power Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

A kind of crystal silicon solar batteries front electrode main grid structure, the main grid structure includes upper layer and lower layer, lower layer is current collection layer, upper layer is conduction welding layer, the height of the conduction welding layer is at least 2 times of current collection layer, the conduction welding layer is contacted with electric current collection layer segment, welding of the conduction welding layer for interconnecting strip between cell piece, the side that interconnecting strip is contacted with conduction welding layer is hanging, increase heat dissipation effect when welding to reduce the generation of interconnecting strip protrusion scar, increase component power, compared with conventional solar cell, the light-receiving area of battery is identical, after series welding is at component, it is identical in welding pulling force, the light-receiving area of component can be dramatically increased;Vertical parallax is presented in current collection layer, and when series welding is at component, interconnecting strip is welded with conduction welding layer segment, and unwelded part can still receive light below interconnecting strip, can thus be retained the light advantage of high light main grid solar cell.

Description

A kind of crystal silicon solar batteries front electrode main grid structure
Technical field
The invention belongs to crystal silicon solar batteries production fields, and in particular to a kind of crystal silicon solar batteries front electrode master Grid structure.
Background technology
The main gate line of common metal gate line electrode both plays collected current, while being also the metal welding being connect with welding Contact.In order to reduce the shading-area on crystal silicon solar batteries surface, Normal practice is to change the shape of main gate line or use to engrave The modes such as empty, segmentation reduce the shading-area of metal grid lines, the light utilization efficiency of solar cell are improved, to improve solar-electricity The photoelectric conversion efficiency in pond.But this novel high light main grid solar cell is when making component, in series welding process Interconnecting strip can be completely obscured by main gate line, newly-increased sensitive area since blocking for interconnecting strip can not receive sunray, this The novel main grid structure of kind can not play its due effect when making component;In addition, existing structure main grid structure is easy out It now radiates uneven, generates heat and hoard, cause interconnecting strip easily to occur raised scar in welding, cause under component power Drop.
Invention content
To solve drawbacks described above, the present invention provides a kind of crystal silicon solar batteries front electrode main grid structure, the main grid knot Structure is divided into upper layer and lower layer, below one layer be current collection layer, shape be contiguous segmentation formula or hollow type main grid, for collecting the sun The electric current that energy battery generates;One layer is conduction welding layer above, by the several small metal lists being evenly distributed in current collection layer Member composition, contacts, the part contacted with current collection layer, the electric current collection of shape and corresponding position with electric current collection layer segment Layer is identical, in this way while not increasing grid line shading-area, makes main grid that vertical parallax be presented, when series welding is at component, interconnection Item is only contacted with the conduction welding layer of main grid, interconnecting strip not in contact with part below can still receive light, to improve the sun The light-receiving area of energy battery component, and then improve the photoelectric conversion efficiency and output power of component;When welding interconnecting strip, interconnection Item is only contacted with conduction welding layer, since conduction welding layer is located above current collection layer, interconnecting strip and conduction welding layer The side of contact is hanging, and heat dissipation effect when increasing welding increases component power to reduce the generation of interconnecting strip protrusion scar.
A kind of crystal silicon solar batteries front electrode main grid structure, the main grid structure include upper layer and lower layer, and lower layer is electricity Collecting layer is flowed, upper layer is conduction welding layer, and the height of the conduction welding layer is at least 2 times of current collection layer, the conduction Welding layer is contacted with electric current collection layer segment, welding of the conduction welding layer for interconnecting strip between cell piece.
Preferably, the current collection layer shape is contiguous segmentation formula or hollow type, and is connected with secondary grid, for collecting too The electric current that positive energy battery generates.
Preferably, the electric current of the part that the conduction welding layer is contacted with current collection layer, shape and contact position is received It is identical to collect layer shape.
Preferably, the height of the conduction welding layer is 2 ~ 4 times of electric current collection layer height
Preferably, the material of the current collection layer is at least one of metallic silver, silver alloy.
Preferably, the conduction welding layer material is metallic silver, silver alloy, metallic aluminium, aluminium alloy, metallic copper, copper alloy At least one of.
A kind of printing process of crystal silicon solar batteries front electrode electrode main grid structure, including making herbs into wool, diffusion, etching and PECVD plated films, printed back electrode and back surface field and printing front electrode pair grid line technique, further include following technique:
Front electrode current collection layer is printed, the material of the current collection layer is at least one of metallic silver, silver alloy;
Cell piece is dried;
The conduction welding layer of portion rule printing same shape above current collection layer, the conduction welding layer Height be 2 ~ 4 times of electric current collection layer height;
Cell piece is sintered;
It is connected between cell piece by welding interconnecting strip above conduction welding layer.
Preferably, the current collection layer be in the series connection of regular diamond shape or I-shaped series connection grid or linear structure at least It is a kind of.
Preferably, the diamond shape series connection or I-shaped series connection are segmentation structure, and the segmentation structure includes solid part Point and hollow parts;The linear structure is segmentation structure or segmented engraved structure;Purpose is to keep covering above main grid mutual After bracing, region below interconnecting strip can under light reflection light.
In the above method, when being dried to cell piece, drying temperature is 200 ~ 300 DEG C, 7 ~ 15min of drying time;Mesh Be the current collection layer preliminarily dried that will be printed, convenient in next step in current collection layer chromatography conduct welding layer.
Further, the current collection layer of above-mentioned printing can also be segmented main grid or the segmented hollow out master of other shapes The shape of grid, the conduction welding layer of printing also needs to make corresponding change.
Compared with prior art, the invention has the advantages that:Using a kind of crystal silicon solar provided by the invention Solar cell prepared by battery front side electrode current collection layer structure and preparation method thereof is compared with conventional solar cell, electricity The light-receiving area in pond is identical, identical in welding pulling force after series welding is at component, can dramatically increase the light-receiving surface of component Product;Vertical parallax is presented in current collection layer, and when series welding is at component, interconnecting strip is welded with conduction welding layer segment, under interconnecting strip The unwelded part in face can still receive light, can thus be protected the light advantage of high light main grid solar cell It stays, to improve the light-receiving area of solar cell module, and then improves the photoelectric conversion efficiency and output power of component;This hair Bright provided technical solution is when interconnecting strip is welded, since interconnecting strip is higher than current collection layer, to increase dissipating for interconnecting strip Thermal effect prevents heat in traditional technology and concentrates not radiating to lead to the situation of protrusion.
Description of the drawings
Present invention will be further explained below with reference to the attached drawings and examples.
A kind of Fig. 1 crystal silicon solar batteries front electrode main grid structural schematic diagrams provided by the invention.
A kind of Fig. 2 crystal silicon solar batteries front electrode main grid attachment structure schematic diagrams provided by the invention.
The linear segmentation structure schematic diagram of Fig. 3 current collection layers.
Fig. 4 current collection layer diamond shape segmentation structure schematic diagrames.
Specific implementation mode
A kind of crystal silicon solar batteries front electrode main grid structure, the main grid structure include upper layer and lower layer, and lower layer is 1 electricity Flow collecting layer, upper layer is 2 conduction welding layers, and the height of the 2 conduction welding layer is at least 2 times of 1 current collection layer, described 2 Conduction welding layer is contacted with 1 electric current collection layer segment, welding of the 2 conduction welding layer for 4 interconnecting strips between 3 cell pieces.
Preferably, the 1 current collection layer shape is contiguous segmentation formula or hollow type, and is connected with secondary grid, for collecting The electric current that solar cell generates.
Preferably, the part that the 2 conduction welding layer is contacted with 1 current collection layer, the electric current of shape and contact position Collecting layer shape is identical.
Preferably, the height of the 2 conduction welding layer is 2 ~ 4 times of 1 electric current collection layer height
Preferably, the material of 1 current collection layer is at least one of metallic silver, silver alloy.
Preferably, the 2 conduction welding layer material is metallic silver, silver alloy, metallic aluminium, aluminium alloy, metallic copper, copper alloy At least one of.
A kind of printing process of crystal silicon solar batteries front electrode electrode main grid structure, including making herbs into wool, diffusion, etching and PECVD plated films, printed back electrode and back surface field and printing front electrode pair grid line technique, further include following technique:
Front electrode current collection layer is printed, the material of the current collection layer is at least one of metallic silver, silver alloy;
Cell piece is dried;
The conduction welding layer of portion rule printing same shape above current collection layer, the conduction welding layer Height be 2 ~ 4 times of electric current collection layer height;
Cell piece is sintered;
It is connected between cell piece by welding interconnecting strip above conduction welding layer.
Preferably, the current collection layer be in the series connection of regular diamond shape or I-shaped series connection grid or linear structure at least It is a kind of.
Preferably, the diamond shape series connection or I-shaped series connection are segmentation structure, and the segmentation structure includes solid part Point and hollow parts;The linear structure is segmentation structure or segmented engraved structure;Purpose is to keep covering above main grid mutual After bracing, region below interconnecting strip can under light reflection light.
In the above method, when being dried to cell piece, drying temperature is 200 ~ 300 DEG C, 7 ~ 15min of drying time;Mesh Be the current collection layer preliminarily dried that will be printed, convenient in next step in current collection layer chromatography conduct welding layer.
Further, the current collection layer of above-mentioned printing can also be segmented main grid or the segmented hollow out master of other shapes The shape of grid, the conduction welding layer of printing also needs to make corresponding change.
Embodiment 1
The present embodiment chooses the polysilicon chip of common commercially available 156 × 156mm, 185 ± 20 μm of thickness, resistivity 1 ~ 3.It presses According to front electrode printing process provided by the invention.Including:
a1)According to the production method of conventional polycrystalline silicon solar cell, making herbs into wool is carried out to polysilicon solar battery slice, is expanded It dissipates, etching edge, remove phosphorosilicate glass, PECVD platings antireflective film, printing back electrode, printing back of the body electric field.
b1)Front metal current collection layer is printed, material is commercially available common positive electrode silver paste, and electric current collection layer pattern is line Shape segmented main grid, such as Fig. 3.
c1)Cell piece is dried, 220 DEG C of drying temperature, drying time 10min.
e1)Linear segmented conduction welding layer is printed in current collection layer, conducts the shape and position and phase of welding layer The main grid answered is completely aerdentalloy to the material for just, conducting welding layer, and the height for conducting welding layer is 3 times of main grid height.
f1)Polysilicon solar battery slice is sintered after finishing printing, is tested.
Embodiment 2
The present embodiment chooses the polysilicon chip of common commercially available 156 × 156mm, 185 ± 20 μm of thickness, resistivity 1 ~ 3.It presses According to front electrode printing process provided by the invention.Including:
a2)According to the production method of conventional polycrystalline silicon solar cell, making herbs into wool is carried out to polysilicon solar battery slice, is expanded It dissipates, etching edge, remove phosphorosilicate glass, PECVD platings antireflective film, printing back electrode, printing back of the body electric field.
b2)Front metal current collection layer is printed, material is commercially available common positive electrode silver paste, and electric current collection layer pattern is water chestnut Shape segmented main grid, such as Fig. 4.
c2)Cell piece is dried, 220 DEG C of drying temperature, drying time 10min.
e2)On main grid print diamond shape segmented conduct welding layer, conduct welding layer shape and position with it is corresponding lead Grid are completely metallic aluminium to the material for just, conducting welding layer, and the height for conducting welding layer is 3 times of main grid height.
f2)Monocrystaline silicon solar cell piece is sintered after finishing printing, is tested.
It is clear that the above embodiment is only the better embodiment of the present invention, any on this basis simple changes Into all belonging to the scope of protection of the present invention.

Claims (6)

1. a kind of crystal silicon solar batteries front electrode main grid structure, it is characterised in that the main grid structure includes upper layer and lower layer, Lower layer is current collection layer, and upper layer is conduction welding layer, and the height of the conduction welding layer is at least 2 times of current collection layer, The conduction welding layer is contacted with electric current collection layer segment, welding of the conduction welding layer for interconnecting strip between cell piece.
2. a kind of crystal silicon solar batteries front electrode main grid structure according to claim 1, it is characterised in that the electricity It is contiguous segmentation formula or hollow type to flow collecting layer shape, and is connected with secondary grid.
3. a kind of crystal silicon solar batteries front electrode main grid structure according to claim 1, it is characterised in that the biography The part that welding layer is contacted with current collection layer is led, shape is identical as the current collection layer shape of contact position.
4. a kind of crystal silicon solar batteries front electrode main grid structure according to claim 1, it is characterised in that the biography The height for leading welding layer is 2 ~ 4 times of electric current collection layer height.
5. a kind of crystal silicon solar batteries front electrode main grid structure according to claim 1, it is characterised in that the electricity The material for flowing collecting layer is at least one of metallic silver, silver alloy.
6. a kind of crystal silicon solar batteries front electrode main grid structure according to claim 1, it is characterised in that the biography It is at least one of metallic silver, silver alloy, metallic aluminium, aluminium alloy, metallic copper, copper alloy to lead welding layer material.
CN201721799528.5U 2017-12-21 2017-12-21 A kind of crystal silicon solar batteries front electrode main grid structure Expired - Fee Related CN207834320U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201721799528.5U CN207834320U (en) 2017-12-21 2017-12-21 A kind of crystal silicon solar batteries front electrode main grid structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201721799528.5U CN207834320U (en) 2017-12-21 2017-12-21 A kind of crystal silicon solar batteries front electrode main grid structure

Publications (1)

Publication Number Publication Date
CN207834320U true CN207834320U (en) 2018-09-07

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107919402A (en) * 2017-12-21 2018-04-17 润峰电力有限公司 A kind of crystal silicon solar batteries front electrode main grid structure and its printing process
CN116921970A (en) * 2023-09-12 2023-10-24 天合光能股份有限公司 Photovoltaic cell interconnection press and series welding machine

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107919402A (en) * 2017-12-21 2018-04-17 润峰电力有限公司 A kind of crystal silicon solar batteries front electrode main grid structure and its printing process
CN116921970A (en) * 2023-09-12 2023-10-24 天合光能股份有限公司 Photovoltaic cell interconnection press and series welding machine
CN116921970B (en) * 2023-09-12 2024-03-01 天合光能股份有限公司 Photovoltaic cell interconnection press and series welding machine

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