CN205069647U - Solar cell with crystal edge collecting structure - Google Patents
Solar cell with crystal edge collecting structure Download PDFInfo
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- CN205069647U CN205069647U CN201520793166.3U CN201520793166U CN205069647U CN 205069647 U CN205069647 U CN 205069647U CN 201520793166 U CN201520793166 U CN 201520793166U CN 205069647 U CN205069647 U CN 205069647U
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- Prior art keywords
- solar cell
- edge
- silicon
- layer
- rich
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- 239000013078 crystal Substances 0.000 title abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000002161 passivation Methods 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 68
- 229910000632 Alusil Inorganic materials 0.000 claims description 34
- 229910045601 alloy Inorganic materials 0.000 claims description 34
- 239000000956 alloy Substances 0.000 claims description 34
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 230000003667 anti-reflective effect Effects 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021364 Al-Si alloy Inorganic materials 0.000 abstract 2
- 229910000676 Si alloy Inorganic materials 0.000 abstract 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
A solar cell comprises a substrate having a first surface and a second surface opposite to the first surface; a front electrode disposed on the first surface; the aluminum-silicon alloy layer is an annular aluminum-silicon alloy layer and is arranged on the second surface along the edge of the substrate; a passivation layer disposed on the second surface; and a back electrode disposed on the passivation layer, wherein the back electrode includes a silicon-rich electrode portion passing through the passivation layer and contacting the Al-Si alloy layer, wherein the Al-Si alloy layer and/or the silicon-rich electrode portion has a first edge and a second edge, and the second edge is disposed between the first edge and the periphery, wherein at least a portion of the second edge is not parallel to the periphery of the substrate, thereby solving a problem of high impedance at a corner or a crystal edge of the solar cell, and improving cell efficiency.
Description
Technical field
The utility model relates to technical field of solar batteries, in particular to one, there is crystal edge and collect (CellEdgeCollection, CEC) passivation emitter-base bandgap grading back contacts (PassivatedEmitterandRearContact, the PERC) solar cell of structure.
Background technology
Solar cell irradiates semiconductor substrate by incident ray, produces electron hole pair at its PN junction place, before electron hole pair combines again, collects respectively, so produce photoelectric current via battery front side (or sensitive surface) and backplate.
Passivation emitter-base bandgap grading back contacts (PERC) solar cell utilizes the passivation layer (normally thin alumina layer) being formed in rear surface of solar cell, reduce combining again (recombination) of electron-hole pair, and antireflection plated film can be coordinated to return in solar cell by light reflection, to promote battery efficiency.
Easily there is high impedance problem in four corners of current solar cell or crystal edge position, this phenomenon is less, and more obvious along with the perforate ratio of back of the body passivation layer, and causes fill factor, curve factor (FillFactor, FF) to decline.Increased by the perforate ratio of back of the body passivation layer, then can reduce the effective area of passivation layer, and have influence on the electrical characteristic of battery, such as, open-circuit voltage VOC and short circuit current ISC decline.
It can thus be appreciated that current the art still needs a kind of solar battery technology of improvement, to solve above-mentioned the deficiencies in the prior art and shortcoming.
Utility model content
For solving the problems of the technologies described above, the utility model provides a kind of solar cell of improvement, can promote battery efficiency, and has lower impedance and higher fill factor, curve factor.
For reaching above-mentioned purpose, the utility model led to the real now ︰ solar cell of following technical scheme, included substrate, had relative first surface and second surface; Front electrode, is arranged on the first surface; Alusil alloy layer, described alusil alloy layer is the alusil alloy layer of a ring-type, is arranged on described second surface along described substrate edges; Passivation layer, is arranged on described second surface; And backplate, be positioned on described passivation layer, described backplate comprises the electrode section being rich in silicon, the described electrode section being rich in silicon contacts with described alusil alloy layer through described passivation layer, wherein said alusil alloy layer and/or described in be rich in silicon electrode section there is the first edge and the second edge, and described second edge is between described first edge and described periphery, wherein the described periphery of described second edge and described substrate is not parallel at least partly.
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent, preferred implementation cited below particularly, and coordinate appended accompanying drawing, be described in detail below.But following preferred implementation and accompanying drawing only for reference with explanation use, be not used for being limited the utility model.
Accompanying drawing explanation
The solar cell cross-sectional view of Fig. 1 for illustrating according to the utility model embodiment.
Fig. 2 to Fig. 7 illustrates the electrode structure be arranged on solar cell second surface.
Embodiment
Please refer to Fig. 1, is the solar cell cross-sectional view illustrated according to the utility model embodiment.As shown in Figure 1, solar cell 1 comprises semiconductor substrate 100, and semiconductor substrate 100 has first surface 100a and the second surface 100b relative to first surface 100a.According to the present embodiment, solar cell 1 is passivation emitter-base bandgap grading back contacts (PassivatedEmitterandRearContact, a PERC) solar cell.Described semiconductor substrate 100 can be single crystal silicon substrate or the polycrystal silicon substrate of N-type or P type, but is not limited thereto.The concaveconvex structure formed after a first surface 100a and second surface 100b can have surface roughening process.First surface 100a separately can comprise N-type or P type doping emitter layer (emitterlayer) 22, oxide layer 23, such as silicon dioxide, and at least one deck front-side antireflective plated film 24.Doping emitter layer 22 is electrical contrary with semiconductor substrate 100.Such as, described semiconductor substrate 100 is P type single crystal silicon substrates, and doping emitter layer 22 is N-type.Doping emitter layer 22 can be generally adulterate emitter layer or selective doping emitter layer (selectiveemitter), the thickness of oxide layer 23 is between 5 to 10 nanometers (nm), be preferably 7 nanometers, the passivation of single crystal silicon substrate surface can be improved, reduce current potential and bring out decay (PotentialInducedDegradation, PID).
In other embodiments, when semiconductor substrate 100 is polycrystal silicon substrate, doping emitter layer 22 can not arrange oxide layer 23.According to illustrative embodiments, described front-side antireflective plated film 24 can comprise silicon nitride, but is not limited thereto.
Described first surface 100a separately can comprise at least one front electrode 30, such as, by screen painting (screenprinting) mode, electric conducting material is arranged on the first surface 100a of solar cell 1, then forms front electrode 30 through sintering.In other embodiments, front electrode 30 by other means as electro-plating method is formed, but can also be not limited thereto.
In the present embodiment, described front electrode 30 is after sintering, front-side antireflective plated film 24 can be penetrated, and contact with doping emitter layer 22, in other embodiments, front-side antireflective plated film 24 is a kind of antireflection plated film of patterning, and electric conducting material contacts with doping emitter layer 22 by the pattern of front-side antireflective plated film 24, form front electrode 30 through sintering again, the pattern of aforementioned front-side antireflective plated film 24 refers to an opening penetrating front-side antireflective plated film 24.
Second surface 100b comprises backplate 40 and rear-face contact electrode 44, wherein backplate 40 comprises aluminum metal, and rear-face contact electrode 44 comprises silver, aluminium or other conducting metals, but is not limited thereto.There is between backplate 40 and semiconductor substrate 100 passivation layer 52, such as aluminium oxide (AlOx) layer, thickness and refractive index (n) can adjust according to need, but are preferably thickness between 1 to 20 nanometers, and refractive index (n) is between 1.6 to 1.7.In other embodiments, the thickness of passivation layer 52 can be 1 nanometer, 5 nanometers, 10 nanometers, 15 nanometers or 20 nanometers, and refractive index (n) is 1.6,1.61,1.62,1.63,1.64,1.65,1.66,1.67,1.68,1.69 or 1.7.Passivation layer 52 on second surface 100b includes at least one first opening to expose the semiconductor substrate 100 of part, and the backplate 40 of described aluminiferous metals extends in the first opening, and in the first opening, form the electrode section 42 being rich in silicon, the silicone content being wherein rich in the electrode section 42 of silicon is higher than the backplate 40 beyond the electrode section 42 being rich in silicon, and the electrode section 42 being wherein rich in silicon can comprise alusil alloy layer 421.At the intersection forming region surface field (LocalBackSurfaceField, LocalBSF) 43 dorsad of the electrode section 42 with semiconductor substrate 100 that are rich in silicon.Aforementioned first opening can be continuous wire opening, dotted line shape opening, punctual openings or its combination, but is not limited thereto.
According to the present embodiment, between electrode 40 and passivation layer 52, there is back-protective layer 60 overleaf.Described back-protective layer 60 can be single or multiple lift membrane structure, such as single-layer silicon nitride silicon or silicon oxynitride layer, or the silicon nitride of multilayer, silicon oxynitride or its combination, and wherein, back-protective layer 60 has one second opening relative to aforementioned first opening.
Backplate 40 is contacted with semiconductor substrate 100 by described first opening and the second opening, and in the first opening and the second opening, form the electrode section 42 being rich in silicon.
Please refer to Fig. 2 to Fig. 7, Fig. 2 to Fig. 7 is the structure that crystal edge on the solar cell second surface that proposes of the present invention collects (CellEdgeCollection, CEC) other embodiments.As shown in Figure 2, several parallel regions surface field (LocalBSF) 43 is dorsad provided with in rough middle section on the second surface 100b of semiconductor substrate 100, region dorsad surface field has several parallel alusil alloy layers 421, and along the periphery (perimeter) 101 of semiconductor substrate 100, be provided with the alusil alloy layer 421 of ring-type, the surface field 43 dorsad round the region in middle section.The alusil alloy layer 421 of ring-type has the electrode section 42 being rich in silicon of ring-type, and the electrode section 42 being rich in silicon contacts with alusil alloy layer 421, and be arranged on the alusil alloy layer 421 in middle section there is several parallel electrode section 42 being rich in silicon accordingly.In other embodiments, alusil alloy layer in middle section 421 and region dorsad surface field 43 can be continuous wire, dotted line shape, point-like or its combine, its set-up mode also can nonparallel mode be arranged, and such as, comprises the combination of the parallel dotted line shape alusil alloy layer of part 421 and part non-parallel point-like alusil alloy layer 421 in middle section.
According to illustrative embodiments, alusil alloy layer 421 and/or described in be rich in silicon electrode section 42 there is one first edge 422 and one second edge 423, and the second edge 423 is between the first edge 422 and the periphery 101 of semiconductor substrate 100, wherein described second edge 423 is not parallel with the periphery 101 of semiconductor substrate 100 at least partly.
In fig. 2, the electrode section 42 being rich in silicon of ring-type and/or alusil alloy layer 421, wherein near the second edge 423 of the periphery 101 of solar cell, there is evagination profile, the such as uneven wave contours 42a with periphery 101, form electrode structure of the present utility model, by the alusil alloy layer 421 at aforementioned first edge 422 and the second edge not parallel 423 and/or described in be rich in silicon electrode section 42 can reduce by four corners of solar cell or the impedance at crystal edge position, increase fill factor, curve factor (FF), efficiently avoid open-circuit voltage VOC and short circuit current ISC declines.2A figure is the generalized section that tangent line I-I ' illustrates in Fig. 2, and 2B figure is the generalized section that tangent line II-II ' illustrates in Fig. 2.Can find out from 2A figure and 2B figure, second edge 423 has the uneven wave contours 42a with periphery 101, therefore the second edge 423 being rich in the electrode section 42 of silicon has different distance d1 and d2 from the periphery 101 of solar cell, in this embodiment, d1 is less than d2.
Above-mentioned zone dorsad surface field 43 and be rich in silicon electrode section 42 structure as shown in fig. 1, the electrode section 42 being rich in silicon contacts with alusil alloy layer 421 through passivation layer 52, back-protective layer 60, and other details repeats no more.
The electrode section 42 being rich in silicon of above-mentioned ring-type and/or alusil alloy layer 421, wherein near the second edge 423 of the periphery 101 of solar cell, also can have other profile.
Such as, as shown in Figure 3, the electrode section 42 being rich in silicon of ring-type and/or alusil alloy layer 421, wherein have saw-toothed profile 42b uneven with periphery 101 near the second edge 423 of the periphery 101 of solar cell.Above-mentioned saw-toothed profile 42b can only be arranged along a part of periphery 101 of solar cell, but is not limited thereto.
As shown in Figure 4, the electrode section 42 being rich in silicon of ring-type and/or alusil alloy layer 421, wherein have battlement shape (battlement-shaped) profile 42c near the second edge 423 of the periphery 101 of solar cell.Above-mentioned battlement shape profile 42c can only be arranged along a part of periphery 101 of solar cell, but is not limited thereto.In this instance, above-mentioned battlement shape profile 42c is the relative both sides of the edge setting along solar cell.
As shown in Figure 5, the electrode section 42 being rich in silicon of ring-type and/or alusil alloy layer 421, wherein have the grid-like profile 42d of hollow near the second edge 423 of the periphery 101 of solar cell.Hollow in Fig. 5 grid-like profile 42d is separated out hollow region 142 independent one by one, can not be formed with alusil alloy in hollow region 142.
As shown in Figure 6, the electrode section 42 being rich in silicon of ring-type and/or alusil alloy layer 421, wherein have the grid-like profile 42e of continuous hollow near the second edge 423 of the periphery 101 of solar cell.With the grid-like profile 42d of the hollow of Fig. 5 unlike, the grid-like profile 42e of the continuous hollow in Fig. 6, can make hollow region 142 between two adjacent.Alusil alloy can not be formed with in hollow region 142.
As shown in Figure 7, the electrode section 42 being rich in silicon of ring-type and/or alusil alloy layer 421, wherein have hollow pyramid shape profile 42f near the second edge 423 of the periphery 101 of solar cell.Alusil alloy can not be formed with in the hollow region 142 that each hollow pyramid shape profile 42f surrounds.Above-mentioned hollow pyramid shape profile 42f can only be arranged along a part of periphery 101 of solar cell, but is not limited thereto.In this instance, above-mentioned hollow pyramid shape profile 42f is the relative both sides of the edge setting along solar cell.
In other embodiments, alusil alloy layer 421 also has the first edge and the second edge, wherein said second edge is between described first edge and described periphery, and wherein the described periphery of described second edge and described substrate is not parallel at least partly, and namely the second edge has an evagination profile.Again in other embodiments, alusil alloy layer 421 is all not parallel with the described periphery of described substrate with the second edge of the electrode section 42 being rich in silicon.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (11)
1. a solar cell, is characterized in that, includes:
Substrate, has relative first surface and second surface;
Front electrode, is arranged on the first surface;
Alusil alloy layer, described alusil alloy layer is the alusil alloy layer of ring-type, is arranged on described second surface along described substrate edges;
Passivation layer, is arranged on described second surface; And
Backplate, be positioned on described passivation layer, described backplate comprises the electrode section being rich in silicon, the described electrode section being rich in silicon contacts with described alusil alloy layer through described passivation layer, wherein said alusil alloy layer and/or described in be rich in silicon electrode section there is the first edge and the second edge, and described second edge is between described first edge and the periphery of described substrate, wherein the periphery of described second edge and described substrate is not parallel at least partly.
2. solar cell according to claim 1, is characterized in that, described second edge has evagination profile.
3. solar cell according to claim 2, is characterized in that, described evagination profile is selected from wave to take turns wide ﹑ zigzag and take turns wide ﹑ battlement shape and take turns wide ﹑ hollow one or more of taking turns in wide ﹑ hollow pyramid shape profile grid-like.
4. solar cell according to claim 1, is characterized in that, described passivation layer comprises aluminium oxide.
5. solar cell according to claim 1, is characterized in that, more comprises at least one surface field dorsad between two relative described first edges.
6. solar cell according to claim 5, it is characterized in that, described backplate between two relative described first edges more comprises at least one electrode section being rich in silicon, and described in be rich in silicon electrode section be through described passivation layer and contact with described surface field dorsad.
7. solar cell according to claim 1, is characterized in that, described first surface separately comprises N-type or the doping of P type emitter layer, oxide layer, and at least one deck front-side antireflective plated film.
8. solar cell according to claim 1, is characterized in that, described backplate comprises aluminum metal.
9. solar cell according to claim 1, is characterized in that, more comprises back-protective layer between described backplate and described passivation layer.
10. solar cell according to claim 5, is characterized in that, more comprises back-protective layer between described backplate and described passivation layer.
11. solar cells according to claim 10; it is characterized in that; described backplate between two relative described first edges more comprises at least one electrode section being rich in silicon, and described in be rich in silicon electrode section be through described passivation layer with described back-protective layer to contact with described surface field dorsad.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104209182 | 2015-06-09 | ||
| TW104209182U TWM511126U (en) | 2015-06-09 | 2015-06-09 | Solar cell with cell edge collection structure |
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| Publication Number | Publication Date |
|---|---|
| CN205069647U true CN205069647U (en) | 2016-03-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520793166.3U Active CN205069647U (en) | 2015-06-09 | 2015-10-14 | Solar cell with crystal edge collecting structure |
Country Status (2)
| Country | Link |
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| CN (1) | CN205069647U (en) |
| TW (1) | TWM511126U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057920A (en) * | 2016-06-17 | 2016-10-26 | 苏州阿特斯阳光电力科技有限公司 | PERC (Passivated Emitter and Rear Contact) solar cell |
| CN115241298A (en) * | 2022-02-25 | 2022-10-25 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI652832B (en) | 2016-08-12 | 2019-03-01 | 英穩達科技股份有限公司 | n-TYPE BIFACIAL SOLAR CELL |
| TWI701841B (en) * | 2019-08-02 | 2020-08-11 | 英穩達科技股份有限公司 | Solar cell, and surface passivation structure and surface passivation method thereof |
-
2015
- 2015-06-09 TW TW104209182U patent/TWM511126U/en unknown
- 2015-10-14 CN CN201520793166.3U patent/CN205069647U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057920A (en) * | 2016-06-17 | 2016-10-26 | 苏州阿特斯阳光电力科技有限公司 | PERC (Passivated Emitter and Rear Contact) solar cell |
| CN115241298A (en) * | 2022-02-25 | 2022-10-25 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN115241298B (en) * | 2022-02-25 | 2023-10-31 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
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| Publication number | Publication date |
|---|---|
| TWM511126U (en) | 2015-10-21 |
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| C14 | Grant of patent or utility model | ||
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