CN112599633A - Method for reducing EL black spot defect - Google Patents
Method for reducing EL black spot defect Download PDFInfo
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- CN112599633A CN112599633A CN202011396426.5A CN202011396426A CN112599633A CN 112599633 A CN112599633 A CN 112599633A CN 202011396426 A CN202011396426 A CN 202011396426A CN 112599633 A CN112599633 A CN 112599633A
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000007547 defect Effects 0.000 title claims abstract description 20
- 206010027146 Melanoderma Diseases 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 230000008569 process Effects 0.000 claims abstract description 29
- 238000005498 polishing Methods 0.000 claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for reducing EL black spot defects, which shortens the time for exposing a silicon wafer to the external environment by adjusting the process sequence of a battery piece after back polishing, and finishes the back passivation ALD process on the silicon wafer in advance after back polishing, thereby achieving the purposes of avoiding serious pollution of the silicon wafer and reducing the EL black spot defects.
Description
Technical Field
The application relates to the technical field of photovoltaic cell assemblies, in particular to a method for reducing EL black spot defects.
Background
With the rapid development of the high-efficiency crystalline silicon solar cell technology, customers have higher and higher requirements on the EL quality of the crystalline silicon solar single-crystal cell. In addition, new and efficient batteries are associated with higher technical costs, and therefore, reducing the EL defect rate is also one of the effective ways to reduce the cost of electricity consumption.
Besides the defects of the battery piece (internal factors), various defects are easily introduced in the manufacturing process of the battery piece to cause poor EL test of the battery (external factors), so that the yield is reduced. Among them, the EL dot defect (black dot) is one of the most important EL defects of the cell, and the main cause of the generation thereof is external environmental pollution. Researches find that the tolerance to the cleanliness of the back surface of the silicon wafer is extremely low before the ALD of back passivation is completed, and for the silicon wafer after wet etching, the poorer the cleanliness of the external environment and the more serious the influence of the longer the exposure time of the silicon wafer on the EL point defects are.
Therefore, we need to improve the battery production process to hopefully solve the problem of frequent occurrence of EL spot defects.
Disclosure of Invention
The invention mainly shortens the time for exposing the silicon wafer to the external environment by adjusting the process sequence of the battery piece after back polishing, thereby achieving the purposes of avoiding serious pollution of the silicon wafer and reducing poor EL black spots.
The invention relates to a method for reducing EL black spot defects, which shortens the time for exposing a silicon wafer to the external environment by adjusting the process sequence of a battery piece after back polishing, and finishes the back passivation ALD process on the silicon wafer in advance after back polishing, thereby achieving the purposes of avoiding serious pollution of the silicon wafer and reducing the EL black spot defects.
Further, the method comprises the following steps:
step S01, texturing the silicon wafer;
step S02, preparing a uniform doping layer on the surface of the P-type silicon substrate in a P diffusion mode to form a PN junction of the crystalline silicon solar cell;
step S03, corroding the lower surface and the edge of the diffused silicon wafer, and removing N-type silicon on the edge to insulate the upper surface and the lower surface of the silicon wafer;
step S04, polishing the back of the silicon wafer;
step S05, back passivation ALD is carried out on the back surface;
step S06, forming a layer of SiO2 on the silicon surface by using high temperature;
step S07, plating a layer of SiNx on the front surface of the silicon wafer by adopting a PECVD process;
step S08, depositing a silicon nitride film on the back of the silicon wafer;
step S09, preparing a back electrode and an aluminum back field on the back of the battery in a screen printing mode, and preparing a positive electrode and a front fine grid line on the front of the battery;
step S10, the battery is graded according to the bad electrical property, appearance, EL and resistance of the battery, and the former stage process condition can be reflected and adjusted accordingly.
Further, the step S03 is specifically: and corroding the lower surface and the edge of the diffused silicon wafer by using mixed liquid of HNO3 and HF, and removing N-type silicon on the edge, so that the upper surface and the lower surface of the silicon wafer are mutually insulated.
Further, the step S04 is specifically: and polishing the back surface of the silicon wafer by using KOH and polishing additives.
Further, in step S05, an Al2O3 thin film is formed on the back surface to passivate the back surface.
Compared with the prior art, the method for reducing the poor EL black spots has the following beneficial effects:
compared with the prior art, the method has simple actual operation, avoids exposing the silicon wafer to the external environment for a long time after back polishing by adjusting the process sequence on the premise of not increasing any additional cost, so as to solve the problem of excessive bad EL black spots and improve the yield of finished products of batteries.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings that are needed to be used in the present invention will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts.
FIG. 1 is a process flow diagram of the method for reducing EL black spot defects according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
As shown in FIG. 1, the present invention is a method for reducing EL black spot defect, and the flow chart can include the steps S01-S10:
and step S01, the main purpose of texturing is to remove oil stains and metal impurities on the surface of the P-type substrate, remove the mechanical damage layer, form a pyramid textured surface, trap light and reduce surface reflection.
And step S02, preparing a uniform doping layer on the surface of the P-type silicon substrate in a P diffusion mode to form a PN junction of the crystalline silicon solar cell.
And step S03, corroding the lower surface and the edge of the diffused silicon wafer by using mixed liquid of HNO3 and HF, and removing N-type silicon on the edge, so that the upper surface and the lower surface of the silicon wafer are mutually insulated.
And step S04, polishing the back of the silicon wafer by using KOH and polishing additives, so that surface recombination can be reduced, light reflection inside the cell can be increased, short-circuit current and open-circuit voltage can be improved, and the smooth back is favorable for ALD coating.
And step S05, forming a layer of Al2O3 film on the back surface, passivating the back surface, effectively reducing the recombination of the back surface and improving the open-circuit voltage.
Step S06, a layer of SiO2 is formed on the silicon surface by utilizing high temperature, which plays the role of PID resistance and has the function of repairing crystal lattice, and the heat damage caused by high temperature diffusion (850 ℃) can be reduced.
Step 07, a layer of SiNx is plated on the front surface of the silicon wafer by adopting a PECVD process, so that light reflection can be reduced, light absorption of the cell can be increased, and the surface of the cell can be passivated. In addition, a large amount of H is present in the SiNx film, and activation during sintering passivates dangling bonds inside the crystal.
Step S08, a silicon nitride film is deposited on the back of the silicon wafer, which can enhance the hydrogen passivation effect, protect the passivation film from being eroded by Al slurry in the silk screen sintering process, increase the internal reflection of the long wave band on the back surface of the cell, and improve the short circuit current and the photoelectric conversion efficiency.
And step S09, preparing a back electrode and an aluminum back field on the back of the battery in a screen printing mode, and preparing a positive electrode and a front fine grid line on the front of the battery, wherein the functions of collecting current and outputting current are mainly achieved.
In step S10, the battery is classified according to its electrical properties, appearance, EL, poor resistance (uneven current affecting the components), etc., and the previous stage process conditions can be reflected and adjusted accordingly.
In the conventional battery production process, step S06 is performed first, and then step S05 is performed. Namely, after the back polishing process, annealing treatment is carried out on the silicon wafer, and then the back passivation ALD process is carried out. After the silicon wafer back polishing is finished, step S05 is performed first, and then step S06 is performed. Firstly, performing a back passivation ALD process, plating an Al2O3 film on the back surface of a silicon wafer to protect the back surface, and then performing an annealing process, wherein the rest process flows are unchanged.
The method for reducing the EL black point defect has no change in difficulty on the basis of the existing process, but can effectively reduce the time of exposing the silicon wafer in the air and effectively reduce the influence caused by the EL point defect. The method of the present application has not been implemented in the prior art, mainly considering that performing the back passivation ALD process followed by the annealing process may affect the growth of the SiO2 layer on the back surface, thereby affecting the passivation and anti-PID effects of SiO 2. However, a lot of experiments in a laboratory show that the back passivation ALD process is carried out first and then the annealing process is carried out, and the growth of the SiO2 layer on the back surface is not obviously influenced, so that the method is effective.
As can be seen from the steps of the process of the present invention and the prior art, the process only sequentially adjusts the two processes of oxidation annealing and ALD, and therefore, the influence on the production cost, the process, the productivity, etc. of the product is small on the whole.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (5)
1. The method is characterized in that the time for exposing the silicon wafer to the external environment is shortened by adjusting the process sequence of the cell after back polishing, and the back passivation ALD process is completed on the silicon wafer in advance after the back polishing, so that the aims of avoiding serious pollution of the silicon wafer and reducing the poor EL black spots are fulfilled.
2. A method for reducing EL black spot failure as recited in claim 1, comprising the steps of:
step S01, texturing the silicon wafer;
step S02, preparing a uniform doping layer on the surface of the P-type silicon substrate in a P diffusion mode to form a PN junction of the crystalline silicon solar cell;
step S03, corroding the lower surface and the edge of the diffused silicon wafer, and removing N-type silicon on the edge to insulate the upper surface and the lower surface of the silicon wafer;
step S04, polishing the back of the silicon wafer;
step S05, back passivation ALD is carried out on the back surface;
step S06, forming a layer of SiO2 on the silicon surface by using high temperature;
step S07, plating a layer of SiNx on the front surface of the silicon wafer by adopting a PECVD process;
step S08, depositing a silicon nitride film on the back of the silicon wafer;
step S09, preparing a back electrode and an aluminum back field on the back of the battery in a screen printing mode, and preparing a positive electrode and a front fine grid line on the front of the battery;
step S10, the battery is graded according to the bad electrical property, appearance, EL and resistance of the battery, and the former stage process condition can be reflected and adjusted accordingly.
3. The method for reducing the EL black spot defect according to claim 2, wherein the step S03 is specifically as follows: and corroding the lower surface and the edge of the diffused silicon wafer by using mixed liquid of HNO3 and HF, and removing N-type silicon on the edge, so that the upper surface and the lower surface of the silicon wafer are mutually insulated.
4. The method for reducing the EL black spot defect according to claim 2, wherein the step S04 is specifically as follows: and polishing the back surface of the silicon wafer by using KOH and polishing additives.
5. The method of claim 2, wherein step S05 is performed by forming a Al2O3 film on the back surface of the substrate, and passivating the back surface.
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| CN202011396426.5A CN112599633B (en) | 2020-12-03 | 2020-12-03 | Method for reducing EL black spot defect |
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| CN202011396426.5A CN112599633B (en) | 2020-12-03 | 2020-12-03 | Method for reducing EL black spot defect |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996747A (en) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | Preparing method for crystalline silicon solar battery taking back single-layer aluminum oxide as passivating film |
| CN105226115A (en) * | 2015-09-07 | 2016-01-06 | 中国东方电气集团有限公司 | A kind of N-type crystal silicon battery and preparation method thereof |
| CN107068777A (en) * | 2017-02-13 | 2017-08-18 | 晶澳（扬州）太阳能科技有限公司 | A kind of local Al-BSF solar cell and preparation method thereof |
| CN107221580A (en) * | 2017-06-15 | 2017-09-29 | 常州亿晶光电科技有限公司 | Lift the battery preparation method that PERC carries on the back passivation effect |
| CN206558515U (en) * | 2017-02-13 | 2017-10-13 | 晶澳（扬州）太阳能科技有限公司 | A kind of local Al-BSF solar cell |
| CN111883597A (en) * | 2020-07-30 | 2020-11-03 | 常州时创能源股份有限公司 | Composite passivation film of PERC (Positive-negative resistance) battery, preparation method and PERC battery |
-
2020
- 2020-12-03 CN CN202011396426.5A patent/CN112599633B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996747A (en) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | Preparing method for crystalline silicon solar battery taking back single-layer aluminum oxide as passivating film |
| CN105226115A (en) * | 2015-09-07 | 2016-01-06 | 中国东方电气集团有限公司 | A kind of N-type crystal silicon battery and preparation method thereof |
| CN107068777A (en) * | 2017-02-13 | 2017-08-18 | 晶澳（扬州）太阳能科技有限公司 | A kind of local Al-BSF solar cell and preparation method thereof |
| CN206558515U (en) * | 2017-02-13 | 2017-10-13 | 晶澳（扬州）太阳能科技有限公司 | A kind of local Al-BSF solar cell |
| CN107221580A (en) * | 2017-06-15 | 2017-09-29 | 常州亿晶光电科技有限公司 | Lift the battery preparation method that PERC carries on the back passivation effect |
| CN111883597A (en) * | 2020-07-30 | 2020-11-03 | 常州时创能源股份有限公司 | Composite passivation film of PERC (Positive-negative resistance) battery, preparation method and PERC battery |
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