CN103413868A - Preparing process for multilayer film of crystalline silicon solar cell - Google Patents

Preparing process for multilayer film of crystalline silicon solar cell Download PDF

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CN103413868A
CN103413868A CN2013103759743A CN201310375974A CN103413868A CN 103413868 A CN103413868 A CN 103413868A CN 2013103759743 A CN2013103759743 A CN 2013103759743A CN 201310375974 A CN201310375974 A CN 201310375974A CN 103413868 A CN103413868 A CN 103413868A
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antireflective coating
pass
plasma source
coating
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贾河顺
姜言森
任现坤
张春艳
马继磊
徐振华
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Linuo Solar Power Co Ltd
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Abstract

The invention relates to preparing process for a reflection film of a crystalline silicon solar cell, in particular to preparing process for a multilayer film of the crystalline silicon solar cell. The preparing process repeatedly changes on-off of reaction gas, and a crystalline silicon wafer can enter coating equipment to form two layers or a plurality of layers of SiNx:H antireflection films. The preparing process can improve the short circuit current of the solar cell to 14 to 20mA, the open-circuit voltage by 1.1-5mV and the efficiency by 0.1% to 0.2%. Furthermore, the solar cell can be graded more concentratedly.

Description

A kind of crystal silicon solar batteries multilayer film preparation technology
Technical field
The present invention relates to crystal silicon solar antireflective coating preparation technology, be specifically related to a kind of crystal silicon solar batteries double-layer reflection reducing coating preparation technology.
Background technology
As far back as 1996, Kyocera company, with the antireflective coating of SiNx:H as solar cell, made the efficiency of polycrystalline silicon solar cell reach 17.1%.Now, with ion, strengthen chemical vapour deposition (CVD) (PECVD) and prepare SiNx:H and become one of standard technology of traditional solar cell, mainly contain 3 effects: the reflectivity that reduces solar battery surface as antireflective coating; Surface passivation, reduce surface recombination velocity (SRV); The body passivation, reduce bluk recombination speed.In actual application, in order to improve anti-reflective effect, tend to lose passivation effect: for example, if the SiNx:H film of the refractive index of SiNx:H higher (between 2.2-2.3) has higher Si-H key density, can effectively reduce reverse saturation current, have better passivation effect, but can cause serious absorption loss water when the refractive index of SiNx:H film is excessive.
But the realization of multilayer film, generally to need silicon chip repeatedly access arrangement carry out repeatedly plated film, although the efficiency of solar cell can obtain certain lifting like this, corresponding solar cell produces the line production capacity to be reduced greatly; If separately carry out in addition repeatedly plated film, the performance of film will heterogeneity, and the improved efficiency space is also limited.
The passivation that crystal silicon solar battery is good in addition and anti-reflective effect can improve the consistency of solar cell, the solar cell grouping is narrowed down, reduce the power loss of solar module, and can reduce the poor efficiency solar cell piece, improve product yield and high effective flake ratio.
Summary of the invention
Purpose of the present invention is exactly a kind of crystal silicon solar batteries double-layer reflection reducing coating preparation technology who provides for the defect of above-mentioned existence, the present invention can carry out repeatedly the deposition of anti-reflection film of solar cell continuously in same equipment, not only improve the absorptivity of sunlight, but also can improve the passivation effect of solar cell, improve open circuit voltage, finally improved the efficiency of solar cell.
A kind of crystal silicon solar batteries double-layer reflection reducing coating of the present invention fabricating technology scheme is, at the sensitive surface of silicon chip, two-layer above antireflective coating is set.
Preferably, the sensitive surface at silicon chip arranges three layers of antireflective coating.
Described antireflective coating is the SiNx:H antireflective coating.
Concrete steps are:
The preparation of ground floor antireflective coating: the silicon chip after cleaning is put into tube-type film coating equipment, and (1), under temperature 400-500 ℃ condition, passes into 2-8slm NH after leak detection 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.5-4slm SiH 4, SiH 4Gas passes into time 60-500s, forms thickness 5-50nm, the SiNx:H antireflective coating of refractive index 1.9-2.4; (3) close plasma source and SiH 4And NH 3Pass into.
The preparation of second layer antireflective coating: (1), under temperature 400-500 ℃ condition, passes into 4-10slm NH3, then opens plasma source and carries out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.1-3slm SiH 4, SiH 4Gas passes into time 400-2000s, forms thickness 40-150nm, the SiNx:H antireflective coating of refractive index 1.8-2.0; (3) close plasma source and SiH 4And NH 3Pass into.
The 3rd layer of antireflective coating preparation: (1), under temperature 400-500 ℃ condition, passes into 5-12slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.05-2slm SiH 4, SiH 4Gas passes into time 0-2000s, forms thickness 0-150nm, the SiNx:H antireflective coating of refractive index 1.7-1.9; (3) close plasma source and SiH 4And NH 3Pass into, after cooling, take out the silicon chip after plated film, the preparation technology of this antireflective coating completes.
Preferably, comprise the following steps:
The preparation of ground floor antireflective coating: the silicon chip after cleaning is put into tube-type film coating equipment, and (1), under 440 ℃ of conditions of temperature, passes into 3.2slm NH after leak detection 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.9slm SiH 4, SiH 4Gas passes into time 100s, forms thickness 9nm, the SiNx:H antireflective coating of refractive index 2.35; (3) close plasma source and SiH 4And NH 3Pass into;
The preparation of second layer antireflective coating: (1), under 450 ℃ of conditions of temperature, passes into 5.3slm NH3, then opens plasma source and carries out NH3 ionization, for next step reaction is prepared; (2) pass into 0.25slm SiH4, SiH4 gas passes into time 200s, forms thickness 20nm, the SiNx:H antireflective coating of refractive index 1.9; (3) close passing into of plasma source and SiH4 and NH3;
The 3rd layer of antireflective coating preparation: (1), under 460 ℃ of conditions of temperature, passes into 6slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.2slm SiH 4, SiH 4Gas passes into time 1000s, forms thickness 75nm, the SiNx:H antireflective coating of refractive index 1.7; (3) close plasma source and SiH 4And NH 3Pass into, after cooling, take out the silicon chip after plated film, the preparation technology of this antireflective coating completes.
The preparation of two-layer antireflective coating, concrete steps are:
The preparation of ground floor antireflective coating: the silicon chip after cleaning is put into tube-type film coating equipment, and (1), under 450 ℃ of conditions of temperature, passes into 3.3slm NH after leak detection 3, then open plasma source and carry out NH3 ionization, for next step reaction is prepared; (2) pass into 0.8slm SiH 4, SiH 4Gas passes into time 125s, forms thickness 10nm, the SiNx:H antireflective coating of refractive index 2.3; (3) close plasma source and SiH 4And NH 3Pass into;
The preparation of second layer antireflective coating: (1), under 450 ℃ of conditions of temperature, passes into 5.3slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.25slm SiH 4, SiH 4Gas passes into time 1030s, forms thickness 80nm, the SiNx:H antireflective coating of refractive index 1.9; (3) close plasma source and SiH 4And NH 3Pass into, after cooling, take out the silicon chip after plated film, the preparation technology of this antireflective coating completes.
Beneficial effect of the present invention is: crystal silicon solar batteries double-layer reflection reducing coating preparation technology of the present invention, disposable at solar battery surface continuous production double-layer reflection reducing coating, do not need silicon chip repeatedly access arrangement carry out repeatedly plated film, guaranteed that solar cell produces the line production capacity, has promoted the efficiency of solar cell simultaneously; Needn't separately carry out repeatedly plated film, guarantee the homogeneous of film performance.The solar cell that adopts preparation technology of the present invention to prepare, have good passivation and anti-reflective effect, improved the consistency of solar cell, the solar cell grouping is narrowed down, reduced the power loss of solar module, not only improve the absorptivity of sunlight, but also can improve the passivation effect of solar cell, improve open circuit voltage, finally improved the efficiency of solar cell, improve product yield and high effective flake ratio.Experiment shows: can improve solar cell short circuit current 14-20mA, and the high 1.1-5mV of open circuit voltage, improved efficiency 0.1-0.2%, and the solar cell stepping is more concentrated.
The accompanying drawing explanation
Figure 1 shows that the open circuit voltage chart of sample 3 in the embodiment of the present invention;
Figure 2 shows that the open circuit voltage chart of sample 2 in the embodiment of the present invention;
Figure 3 shows that the open circuit voltage chart of traditional single thin film technique sample;
Figure 4 shows that the short circuit current chart of sample 3;
Figure 5 shows that the short circuit current chart of sample 2;
Figure 6 shows that the short circuit current chart of the single thin film technique sample of system;
Figure 7 shows that the efficiency chart of sample 3;
Figure 8 shows that the efficiency chart of sample 2;
Figure 9 shows that the efficiency chart of traditional single thin film technique sample.
Embodiment:
In order to understand better the present invention, below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail, but the present invention is not limited thereto.
Embodiment 1
The preparation of ground floor antireflective coating: the P type silicon chip after cleaning is put into tube-type film coating equipment, and (1), under 450 ℃ of conditions of temperature, passes into 5.3slm NH3 after leak detection, then open plasma source and carry out NH3 ionization, for next step reaction is prepared; (2) pass into 0.25slm SiH4, SiH4 gas passes into time 120s, forms thickness 20nm, the SiNx:H antireflective coating of refractive index 1.97.
Close plasma source and SiH 4And NH 3Pass into.
The preparation of second layer antireflective coating: (1), under 450 ℃ of conditions of temperature, passes into 3.3slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.8slm SiH 4, SiH 4Gas passes into time 1000s, forms thickness 60nm, the SiNx:H antireflective coating of refractive index 2.0.
Close plasma source and SiH 4And NH 3Pass into, after cooling, take out the silicon chip after plated film, the preparation technology of this antireflective coating completes.
After silk screen printing and sintering, obtain sample 1.
Embodiment 2
The preparation of ground floor antireflective coating: the P type silicon chip after cleaning is put into tube-type film coating equipment, and (1), under 450 ℃ of conditions of temperature, passes into 3.3slm NH after leak detection 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.8slm SiH 4, SiH 4Gas passes into time 125s, forms thickness 10nm, the SiNx:H antireflective coating of refractive index 2.3.
Close plasma source and SiH 4And NH 3Pass into.
The preparation of second layer antireflective coating: (1), under 450 ℃ of conditions of temperature, passes into 5.3slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.25slm SiH 4, SiH 4Gas passes into time 1030s, forms thickness 80nm, the SiNx:H antireflective coating of refractive index 1.9.
Close plasma source and SiH 4And NH 3Pass into, after cooling, take out the silicon chip after plated film, the preparation technology of this antireflective coating completes.After silk screen printing and sintering, obtain sample 2.
Embodiment 3
The preparation of ground floor antireflective coating: the silicon chip after cleaning is put into tube-type film coating equipment, and (1), under 440 ℃ of conditions of temperature, passes into 3.2slm NH after leak detection 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.9slm SiH 4, SiH 4Gas passes into time 100s, forms thickness 9nm, the SiNx:H antireflective coating of refractive index 2.35; (3) close plasma source and SiH 4And NH 3Pass into;
The preparation of second layer antireflective coating: (1), under 450 ℃ of conditions of temperature, passes into 5.3slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.25slm SiH 4, SiH 4Gas passes into time 200s, forms thickness 20nm, the SiNx:H antireflective coating of refractive index 1.9; (3) close plasma source and SiH 4And NH 3Pass into;
The 3rd layer of antireflective coating preparation: (1), under 460 ℃ of conditions of temperature, passes into 6slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.2slm SiH 4, SiH 4Gas passes into time 1000s, forms thickness 75nm, the SiNx:H antireflective coating of refractive index 1.7; (3) close plasma source and SiH 4And NH 3Pass into, after cooling, take out the silicon chip after plated film, the preparation technology of this antireflective coating completes.After silk screen printing and sintering, obtain sample 3.
Embodiment 4
The preparation of ground floor antireflective coating: the silicon chip after cleaning is put into tube-type film coating equipment, and (1), under 500 ℃ of conditions of temperature, passes into 6slm NH after leak detection 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 3slm SiH 4, SiH 4Gas passes into time 500s, forms thickness 50nm, the SiNx:H antireflective coating of refractive index 2.15; (3) close plasma source and SiH 4And NH 3Pass into;
The preparation of second layer antireflective coating: (1), under 400 ℃ of conditions of temperature, passes into 8slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 2.5slm SiH 4, SiH 4Gas passes into time 1000s, forms thickness 100nm, the SiNx:H antireflective coating of refractive index 1.9; (3) close plasma source and SiH 4And NH 3Pass into;
The 3rd layer of antireflective coating preparation: (1), under 400 ℃ of conditions of temperature, passes into 12slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 2slm SiH 4, SiH 4Gas passes into time 2000s, forms thickness 150nm, the SiNx:H antireflective coating of refractive index 1.8; (3) close plasma source and SiH 4And NH 3Pass into, after cooling, take out the silicon chip after plated film, the preparation technology of this antireflective coating completes.After silk screen printing and sintering, obtain sample 4.
Embodiment 5
The preparation of ground floor antireflective coating: the silicon chip after cleaning is put into tube-type film coating equipment, and (1), under 400 ℃ of conditions of temperature, passes into 2slm NH after leak detection 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.5slm SiH 4, SiH 4Gas passes into time 60s, forms thickness 5nm, the SiNx:H antireflective coating of refractive index 1.9; (3) close plasma source and SiH 4And NH 3Pass into;
The preparation of second layer antireflective coating: (1), under 500 ℃ of conditions of temperature, passes into 4slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 1slm SiH 4, SiH 4Gas passes into time 400s, forms thickness 25nm, the SiNx:H antireflective coating of refractive index 2.0; (3) close plasma source and SiH 4And NH 3Pass into;
The 3rd layer of antireflective coating preparation: (1), under 500 ℃ of conditions of temperature, passes into 3slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.9slm SiH 4, SiH 4Gas passes into time 1000s, forms thickness 70nm, the SiNx:H antireflective coating of refractive index 1.9; (3) close plasma source and SiH 4And NH 3Pass into, after cooling, take out the silicon chip after plated film, the preparation technology of this antireflective coating completes.After silk screen printing and sintering, obtain sample 5.
Embodiment 6
Be below the effect of the solar cell (with reference to sample) for preparing of preparation technology of the present invention and conventional monolayers antireflective coating preparation technology relatively.As shown in table 1, table 1 is sample test result prepared by above different technology conditions, wherein sample 1 is the sample of answering in embodiment 1, sample 2 is the samples of answering in embodiment 2, sample 3 is the samples of answering in embodiment 3, sample 4 is the samples of answering in embodiment 4, sample 5 is the samples of answering in embodiment 5, solar cell prepared by conventional monolayers antireflective coating preparation technology is with reference to sample, as can be seen from the table, the sample of the embodiment of the present invention has higher improved efficiency with respect to the reference sample, and sample 2 and 3 improved efficiency are the most obvious.
Table 1
Figure 2013103759743100002DEST_PATH_IMAGE001
Figure of description Fig. 1-Fig. 3 is the open circuit voltage chart of sample 3, sample 2, conventional monolayers SiNx:H film (with reference to sample) solar cell, as can be seen from the figure the average open-circuit voltage of sample 3 is than the high 1.18mV of the average open-circuit voltage of sample 2, and the average open-circuit voltage of sample 2 is than the high 0.6mV of average open-circuit voltage with reference to sample.This passivation effect that mainly ascribes sample 3 to has obtained optimization, has reduced the saturation current of battery, makes its open circuit voltage be improved.
Fig. 4-Fig. 6 is short circuit current (Isc) test result of different sedimentary condition trial targets.As can be seen from the figure (～5.900A) Isc is high than sample 2(～5.911A) with reference to sample for the average short circuit current Isc(of sample 3～5.924A).The high index of refraction of bottom can increase surperficial passivation effect on the one hand, reduces the blemish state, has reduced the compound probability of charge carrier of front surface, thereby has reduced surperficial saturation current, strengthens the light wave response of battery and increases open circuit voltage; On the other hand, the optical match of outer refractive index and bottom high index of refraction can reduce the reflectivity of front surface, and due to the enhancing of light wave response, thereby the sunlight of the anti-reflection part of duplicature is responded the raising that is converted into short circuit current at the battery front surface.
This shows that the refractive index near the antireflective coating of substrate increases the enhancing that not only brings light absorption, and surface and body passivation have also obtained enhancing.
From the result of Fig. 1-3 and Fig. 4-6, it can also be seen that, not only the Isc of sample 3 and Uoc all increase to some extent, and relatively concentrated, cause that finally battery efficiency distributes also more concentrated, as Figure 7-9.Preparation method with respect to traditional antireflective coating, reasonably double-layer reflection reducing coating can be raised the efficiency more than 0.15%, and efficiency of solar cell distributes more concentrated, not only can reduce the Bin number of solar cell stepping, reduce the power loss of solar module, and can reduce the poor efficiency solar cell piece, improve product yield and high effective flake ratio.Concentrating of efficiency is mainly because the enhancing of sample passivation, and the defect of having repaired the crystal silicon supplied materials, reduced the impact of silicon chip supplied materials on battery performance, now in the situation that produce the distribution of the stable optimization battery efficiency of Wiring technology and will narrow down.

Claims (8)

1. a crystal silicon solar batteries double-layer reflection reducing coating preparation technology, is characterized in that, at the sensitive surface of silicon chip, two-layer above antireflective coating is set.
2. a kind of crystal silicon solar batteries double-layer reflection reducing coating preparation technology according to claim 1, is characterized in that, at the sensitive surface of silicon chip, three layers of antireflective coating is set.
3. a kind of crystal silicon solar batteries double-layer reflection reducing coating preparation technology according to claim 2, is characterized in that, described antireflective coating is the SiNx:H antireflective coating.
4. a kind of crystal silicon solar batteries double-layer reflection reducing coating preparation technology according to claim 2, it is characterized in that, the preparation of ground floor antireflective coating: the silicon chip after cleaning is put into tube-type film coating equipment, (1) under temperature 400-500 ℃ condition, after leak detection, pass into 2-8slm NH3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.5-4slm SiH 4, SiH 4Gas passes into time 60-500s, forms thickness 5-50nm, the SiNx:H antireflective coating of refractive index 1.9-2.4; (3) close plasma source and SiH 4And NH 3Pass into.
5. a kind of crystal silicon solar batteries double-layer reflection reducing coating preparation technology according to claim 4, is characterized in that, the preparation of second layer antireflective coating: (1), under temperature 400-500 ℃ condition, passes into 4-10slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.1-3slm SiH4, SiH4 gas passes into time 400-2000s, forms thickness 40-150nm, the SiNx:H antireflective coating of refractive index 1.8-2.0; (3) close plasma source and SiH 4And NH 3Pass into.
6. a kind of crystal silicon solar batteries double-layer reflection reducing coating preparation technology according to claim 5, is characterized in that, the 3rd layer of antireflective coating preparation: (1), under temperature 400-500 ℃ condition, passes into 5-12slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.05-2slm SiH 4, SiH 4Gas passes into time 0-2000s, forms thickness 0-150nm, the SiNx:H antireflective coating of refractive index 1.7-1.9; (3) close plasma source and SiH 4And NH 3Pass into, after cooling, take out the silicon chip after plated film, the preparation technology of this antireflective coating completes.
7. a kind of crystal silicon solar batteries double-layer reflection reducing coating preparation technology according to claim 1, is characterized in that, comprises the following steps:
The preparation of ground floor antireflective coating: the silicon chip after cleaning is put into tube-type film coating equipment, and (1), under 440 ℃ of conditions of temperature, passes into 3.2slm NH after leak detection 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.9slm SiH 4, SiH 4Gas passes into time 100s, forms thickness 9nm, the SiNx:H antireflective coating of refractive index 2.35; (3) close plasma source and SiH 4And NH 3Pass into;
The preparation of second layer antireflective coating: (1), under 450 ℃ of conditions of temperature, passes into 5.3slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.25slm SiH 4, SiH 4Gas passes into time 200s, forms thickness 20nm, the SiNx:H antireflective coating of refractive index 1.9; (3) close plasma source and SiH 4And NH 3Pass into;
The 3rd layer of antireflective coating preparation: (1), under 460 ℃ of conditions of temperature, passes into 6slm NH 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.2slm SiH 4, SiH 4Gas passes into time 1000s, forms thickness 75nm, the SiNx:H antireflective coating of refractive index 1.7; (3) close plasma source and SiH 4And NH 3Pass into, after cooling, take out the silicon chip after plated film, the preparation technology of this antireflective coating completes.
8. a kind of crystal silicon solar batteries double-layer reflection reducing coating preparation technology according to claim 1, is characterized in that, concrete steps are:
The preparation of ground floor antireflective coating: the silicon chip after cleaning is put into tube-type film coating equipment, and (1), under 450 ℃ of conditions of temperature, passes into 3.3slm NH after leak detection 3, then open plasma source and carry out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.8slm SiH 4, SiH 4Gas passes into time 125s, forms thickness 10nm, the SiNx:H antireflective coating of refractive index 2.3; (3) close plasma source and SiH 4And NH 3Pass into;
The preparation of second layer antireflective coating: (1), under 450 ℃ of conditions of temperature, passes into 5.3slm NH3, then opens plasma source and carries out NH 3Ionization, for next step reaction is prepared; (2) pass into 0.25slm SiH 4, SiH 4Gas passes into time 1030s, forms thickness 80nm, the SiNx:H antireflective coating of refractive index 1.9; (3) close plasma source and SiH 4And NH 3Pass into, after cooling, take out the silicon chip after plated film, the preparation technology of this antireflective coating completes.
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CN104332505B (en) * 2014-12-01 2016-08-31 九州方园新能源股份有限公司 A kind of crystal silicon solar energy battery silicon nitride anti-reflecting film and preparation method thereof
CN106299025A (en) * 2016-08-29 2017-01-04 奥特斯维能源（太仓）有限公司 A kind of technique of tubular type PECVD deposited silicon nitride
CN109713049A (en) * 2018-12-17 2019-05-03 盐城阿特斯协鑫阳光电力科技有限公司 Solar battery antireflective film and preparation method thereof
CN111403492A (en) * 2018-12-27 2020-07-10 成都珠峰永明科技有限公司 Preparation method of passivation layer for solar cell and preparation method of solar cell

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Publication number Priority date Publication date Assignee Title
CN104332505B (en) * 2014-12-01 2016-08-31 九州方园新能源股份有限公司 A kind of crystal silicon solar energy battery silicon nitride anti-reflecting film and preparation method thereof
CN104979427A (en) * 2015-05-15 2015-10-14 欧贝黎新能源科技股份有限公司 Preparation method of double-layer silicon nitride film used for crystalline silicon solar cell
CN106299025A (en) * 2016-08-29 2017-01-04 奥特斯维能源（太仓）有限公司 A kind of technique of tubular type PECVD deposited silicon nitride
CN109713049A (en) * 2018-12-17 2019-05-03 盐城阿特斯协鑫阳光电力科技有限公司 Solar battery antireflective film and preparation method thereof
CN111403492A (en) * 2018-12-27 2020-07-10 成都珠峰永明科技有限公司 Preparation method of passivation layer for solar cell and preparation method of solar cell

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Application publication date: 20131127