CN103199149A - Manufacturing method of four-step cascade photovoltaic cell with antireflection film - Google Patents
Manufacturing method of four-step cascade photovoltaic cell with antireflection film Download PDFInfo
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- CN103199149A CN103199149A CN2013100646955A CN201310064695A CN103199149A CN 103199149 A CN103199149 A CN 103199149A CN 2013100646955 A CN2013100646955 A CN 2013100646955A CN 201310064695 A CN201310064695 A CN 201310064695A CN 103199149 A CN103199149 A CN 103199149A
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Abstract
The invention discloses a manufacturing method of a four-step cascade photovoltaic cell with an antireflection film. The manufacturing method of the four-step cascade photovoltaic cell with the antireflection film includes the steps: growing a GaInAs sub-battery (2), a strain compensation GaAsP/GaInAs superlattice sub-battery (3) and a GaAs sub-battery (4), a first antireflection layer (5), a second antireflection layer (6), a GaInP sub-battery (7), a third antireflection layer (8), a forth antireflection layer (9) and a fifth antireflection layer (10) on the upper surface of an InP underlayment (1); and forming a top electrode (11) on the surface of the fifth antireflection layer (10), and forming a bottom electrode (12) on the lower surface of the InP underlayment (1).
Description
Technical field
The present invention relates to the optical semiconductor electro-technical field, particularly relate to a kind of manufacture method that four of antireflective coating is tied the photovoltaic cell of cascades that has.
Background technology
Photovoltaic cell is to be transform light energy the opto-electronic device of electric energy, concerning photovoltaic cell, the photovoltaic cell of unijunction can only cover and utilize the sunlight of a certain wave-length coverage, in order to take full advantage of the photon energy of sunlight different-waveband, improve the photoelectric conversion efficiency of photovoltaic cell, generally with the semi-conducting material collocation of multiple different band gap, form multi-junction photovoltaic battery.
At present, in GaInP/GaAs/Ge three junction photovoltaic batteries of lattice coupling, the photoelectric conversion efficiency maximum can reach 32% under no optically focused condition.The Ge battery covers wideer spectrum in this three junction battery, and its short circuit current maximum can reach 2 times of other two junction batteries, owing to be subjected to the restriction of three junction batteries series connection, the energy of the solar spectrum of Ge battery correspondence is not by abundant conversion using.GaInP/ (In) GaAs/InGaAsN/Ge four crystal lattice match battery can obtain very high transformation efficiency in theory, but are limited by the growth difficulty that reduces InGaAs N fault in material density, and growth has very big challenge to this four junction battery for material.
And photovoltaic cell carries out in the process of light conversion, the loss of reflection has reduced the number of photons of photovoltaic cell unit are incident, cause the photovoltaic cell current density to reduce, thereby influence the energy conversion efficiency of battery, for improving the photoelectric conversion efficiency of battery, should reduce the loss of battery surface reflection of light, increase optical transmission.
Summary of the invention:
For addressing the above problem, the present invention is intended to propose a kind of manufacture method with four knot cascade photovoltaic cells of antireflective coating, and the photovoltaic cell that adopts this method to make can reach good refractive index coupling, improves its efficient.
The manufacture method of the four knot cascade photovoltaic cells with antireflective coating that the present invention proposes in turn includes the following steps:
A: utilize MOCVD technology grow the successively sub-battery of GaInA s (2), the sub-batteries of strain compensation GaAsP/GaInAs superlattice (3) and the sub-battery of GaAs (4) at InP substrate (1) upper surface;
B: utilize MOCVD technology at the sub-battery of GaAs (4) growth first antireflection layer (5), after this in vacuum coating equipment with second antireflection layer (6) evaporation to the surface of first antireflection layer (5);
C: utilize MOCVD technology at second antireflection layer (6) the growth sub-battery of GaInP (7);
D: utilize MOCVD technology growth regulation three antireflection layers (8) and the 4th antireflection layer (9) successively on the sub-battery of GaInP (7), after this in vacuum coating equipment, evaporation the 5th antireflection layer (10) on the surface of the 4th antireflection layer (9);
E: on the surface of the 5th antireflection layer (10), make after the zone that covers with photoresist outside the zone that will form top electrode (11), adopt hydrofluoric acid solution etching the 4th antireflection layer (9) and the 5th antireflection layer (10), till exposing the 3rd antireflection layer (8);
F: adopt sputtering technology splash-proofing sputtering metal material on the zone that will form top electrode (11) of the 3rd antireflection layer (8), thereby form described top electrode (11);
G: at the whole lower surface splash-proofing sputtering metal material of InP substrate (1), to form hearth electrode (12).
Wherein, first antireflection layer (5) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; Second antireflection layer (6) is the ZnS film, and its refractive index is 2.1-2.3, and thickness is 50-70nm; The 3rd antireflection layer (8) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; The 4th antireflection layer (9) is Si
3N
4Film, its refractive index is: 2.1-2.4, its thickness are 50-60nm; The 5th antireflection layer (10) is Ta
2O
5Film, its refractive index are 2.0～2.15, and its thickness is 80-100nm.
Description of drawings:
The prepared four knot cascade photovoltaic cells with antireflective coating of manufacture method that Fig. 1 proposes for the present invention.
Embodiment:
Below by embodiment the manufacture method that the present invention proposes is elaborated.
The manufacture method of the four knot cascade photovoltaic cells with antireflective coating that the present invention proposes in turn includes the following steps:
A: utilize MOCVD technology grow the successively sub-battery of GaInA s (2), the sub-batteries of strain compensation GaAsP/GaInAs superlattice (3) and the sub-battery of GaAs (4) at InP substrate (1) upper surface;
B: utilize MOCVD technology at the sub-battery of GaAs (4) growth first antireflection layer (5), after this in vacuum coating equipment with second antireflection layer (6) evaporation to the surface of first antireflection layer (5);
C: utilize MOCVD technology at second antireflection layer (6) the growth sub-battery of GaInP (7);
D: utilize MOCVD technology growth regulation three antireflection layers (8) and the 4th antireflection layer (9) successively on the sub-battery of GaInP (7), after this in vacuum coating equipment, evaporation the 5th antireflection layer (10) on the surface of the 4th antireflection layer (9);
E: on the surface of the 5th antireflection layer (10), make after the zone that covers with photoresist outside the zone that will form top electrode (11), adopt hydrofluoric acid solution etching the 4th antireflection layer (9) and the 5th antireflection layer (10), till exposing the 3rd antireflection layer (8);
F: adopt sputtering technology splash-proofing sputtering metal material on the zone that will form top electrode (11) of the 3rd antireflection layer (8), thereby form described top electrode (11);
G: at the whole lower surface splash-proofing sputtering metal material of InP substrate (1), to form hearth electrode (12).
Wherein, first antireflection layer (5) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; Second antireflection layer (6) is the ZnS film, and its refractive index is 2.1-2.3, and thickness is 50-70nm; The 3rd antireflection layer (8) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; The 4th antireflection layer (9) is Si
3N
4Film, its refractive index is: 2.1-2.4, its thickness are 50-60nm; The 5th antireflection layer (10) is Ta
2O
5Film, its refractive index are 2.0～2.15, and its thickness is 80-100nm.
Wherein can adopt metal material to form top electrode (11) and hearth electrode (12), this metal material can be aluminium, silver or gold etc.
Introduce the preferred embodiment of the manufacture method of the present invention's proposition below,
The manufacture method of the four knot cascade photovoltaic cells with antireflective coating that the present invention proposes in turn includes the following steps:
A: utilize MOCVD technology grow the successively sub-battery of GaInA s (2), the sub-batteries of strain compensation GaAsP/GaInAs superlattice (3) and the sub-battery of GaAs (4) at InP substrate (1) upper surface;
B: utilize MOCVD technology at the sub-battery of GaAs (4) growth first antireflection layer (5), after this in vacuum coating equipment with second antireflection layer (6) evaporation to the surface of first antireflection layer (5);
C: utilize MOCVD technology at second antireflection layer (6) the growth sub-battery of GaInP (7);
D: utilize MOCVD technology growth regulation three antireflection layers (8) and the 4th antireflection layer (9) successively on the sub-battery of GaInP (7), after this in vacuum coating equipment, evaporation the 5th antireflection layer (10) on the surface of the 4th antireflection layer (9);
E: on the surface of the 5th antireflection layer (10), make after the zone that covers with photoresist outside the zone that will form top electrode (11), adopt hydrofluoric acid solution etching the 4th antireflection layer (9) and the 5th antireflection layer (10), till exposing the 3rd antireflection layer (8);
F: adopt sputtering technology splash-proofing sputtering metal material on the zone that will form top electrode (11) of the 3rd antireflection layer (8), thereby form described top electrode (11);
G: at the whole lower surface splash-proofing sputtering metal material of InP substrate (1), to form hearth electrode (12).
Wherein, first antireflection layer 5 is the AlGaInN film, and its refractive index is 3.3, and thickness is 36nm; Second antireflection layer 6 is the ZnS film, and its refractive index is 2.15, and thickness is 60nm; The 3rd antireflection layer 8 is the AlGaInN film, and its refractive index is 3.3, and thickness is 36nm; The 4th antireflection layer 9 is Si
3N
4Film, its refractive index is: 2.3, its thickness is 55nm; The 5th antireflection layer 10 is Ta
2O
5Film, its refractive index are 2.1, and its thickness is 85nm.
Wherein can adopt metal material to form top electrode (11) and hearth electrode (12), this metal material can be aluminium, silver or gold etc.
The four knot cascade photovoltaic cells that antireflective coating is arranged proposed by the invention absorb little in the application band scope, refractive index is complementary, and has the good optical performance.
Above execution mode is described in detail the present invention, but above-mentioned execution mode is not in order to limit scope of the present invention, and protection scope of the present invention is defined by the appended claims.
Claims (3)
1. the manufacture method with four knot cascade photovoltaic cells of antireflective coating in turn includes the following steps:
A: utilize MOCVD technology grow the successively sub-battery of GaInA s (2), the sub-batteries of strain compensation GaAsP/GaInAs superlattice (3) and the sub-battery of GaAs (4) at InP substrate (1) upper surface;
B: utilize MOCVD technology at the sub-battery of GaAs (4) growth first antireflection layer (5), after this in vacuum coating equipment with second antireflection layer (6) evaporation to the surface of first antireflection layer (5);
C: utilize MOCVD technology at second antireflection layer (6) the growth sub-battery of GaInP (7);
D: utilize MOCVD technology growth regulation three antireflection layers (8) and the 4th antireflection layer (9) successively on the sub-battery of GaInP (7), after this in vacuum coating equipment, evaporation the 5th antireflection layer (10) on the surface of the 4th antireflection layer (9);
E: on the surface of the 5th antireflection layer (10), make after the zone that covers with photoresist outside the zone that will form top electrode (11), adopt hydrofluoric acid solution etching the 4th antireflection layer (9) and the 5th antireflection layer (10), till exposing the 3rd antireflection layer (8);
F: adopt sputtering technology splash-proofing sputtering metal material on the zone that will form top electrode (11) of the 3rd antireflection layer (8), thereby form described top electrode (11).
2. manufacture method as claimed in claim 1 is characterized in that:
Wherein, first antireflection layer (5) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; Second antireflection layer (6) is the ZnS film, and its refractive index is 2.1-2.3, and thickness is 50-70nm; The 3rd antireflection layer (8) is the AlGaInN film, and its refractive index is 3.2～3.4, and thickness is 30-40nm; The 4th antireflection layer (9) is Si
3N
4Film, its refractive index is: 2.1-2.4, its thickness are 50-60nm; The 5th antireflection layer (10) is Ta
2O
5Film, its refractive index are 2.0～2.15, and its thickness is 80-100nm.
3. manufacture method as claimed in claim 1 or 2, it is characterized in that: wherein, the material of described hearth electrode and top electrode is metal material, for example aluminium, silver or gold etc.
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| CN201310064695.5A CN103199149B (en) | 2013-02-28 | 2013-02-28 | Manufacturing method of four-step cascade photovoltaic cell with antireflection film |
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| CN201310064695.5A CN103199149B (en) | 2013-02-28 | 2013-02-28 | Manufacturing method of four-step cascade photovoltaic cell with antireflection film |
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| CN103199149B CN103199149B (en) | 2015-07-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413868A (en) * | 2013-08-26 | 2013-11-27 | 山东力诺太阳能电力股份有限公司 | Preparing process for multilayer film of crystalline silicon solar cell |
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| CN101533863A (en) * | 2009-03-18 | 2009-09-16 | 厦门市三安光电科技有限公司 | High-efficiency single-chip four-junction solar battery |
| CN101533861A (en) * | 2009-03-18 | 2009-09-16 | 厦门市三安光电科技有限公司 | Three-layer antireflective film for solar battery and preparation method thereof |
| CN102244134A (en) * | 2011-08-02 | 2011-11-16 | 厦门市三安光电科技有限公司 | High efficient four junction solar cells and manufacturing method thereof |
| CN102270693A (en) * | 2011-07-15 | 2011-12-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multijunction laminated solar cell and manufacturing method thereof |
| WO2012115603A1 (en) * | 2011-02-21 | 2012-08-30 | Bedjukh Oleksandr | Multijunction photovoltaic converter and solar battery based thereon |
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2013
- 2013-02-28 CN CN201310064695.5A patent/CN103199149B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533863A (en) * | 2009-03-18 | 2009-09-16 | 厦门市三安光电科技有限公司 | High-efficiency single-chip four-junction solar battery |
| CN101533861A (en) * | 2009-03-18 | 2009-09-16 | 厦门市三安光电科技有限公司 | Three-layer antireflective film for solar battery and preparation method thereof |
| WO2012115603A1 (en) * | 2011-02-21 | 2012-08-30 | Bedjukh Oleksandr | Multijunction photovoltaic converter and solar battery based thereon |
| CN102270693A (en) * | 2011-07-15 | 2011-12-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | Multijunction laminated solar cell and manufacturing method thereof |
| CN102244134A (en) * | 2011-08-02 | 2011-11-16 | 厦门市三安光电科技有限公司 | High efficient four junction solar cells and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103413868A (en) * | 2013-08-26 | 2013-11-27 | 山东力诺太阳能电力股份有限公司 | Preparing process for multilayer film of crystalline silicon solar cell |
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